JP3238326B2 - Light emitting device - Google Patents

Light emitting device

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Publication number
JP3238326B2
JP3238326B2 JP18770396A JP18770396A JP3238326B2 JP 3238326 B2 JP3238326 B2 JP 3238326B2 JP 18770396 A JP18770396 A JP 18770396A JP 18770396 A JP18770396 A JP 18770396A JP 3238326 B2 JP3238326 B2 JP 3238326B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting layer
semiconductor light
substrate
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18770396A
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Japanese (ja)
Other versions
JPH1032351A (en
Inventor
幸雄 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18770396A priority Critical patent/JP3238326B2/en
Publication of JPH1032351A publication Critical patent/JPH1032351A/en
Application granted granted Critical
Publication of JP3238326B2 publication Critical patent/JP3238326B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

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  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、発光装置に関し、
特に発光波長に対し透明な基板上に半導体発光層を有す
るチップと、これをモールドした樹脂成型体から構成さ
れる発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device,
In particular, the present invention relates to a light emitting device including a chip having a semiconductor light emitting layer on a substrate transparent to an emission wavelength, and a resin molded body obtained by molding the chip.

【０００２】[0002]

【従来の技術】表示ランプとして応用されることの多い
発光ダイオードは、発光波長に対し透明な樹脂成型体中
にチップをモールドしている。2. Description of the Related Art A light emitting diode, which is often used as a display lamp, has a chip molded in a resin molding transparent to the emission wavelength.

【０００３】図８に、従来の発光ダイオードの構成の一
例を示す。同図に示すように、チップ１０４は、基板１
１０と基板上に形成される半導体発光層１１１およびそ
の上に形成される電極１１２ａ、１１２ｂで構成され
る。チップ１０４は、一方のリード１０１ｂの端部に接
着剤１０３を用いてダイボンディングされている。FIG. 8 shows an example of the configuration of a conventional light emitting diode. As shown in FIG.
10, a semiconductor light emitting layer 111 formed on a substrate, and electrodes 112a and 112b formed thereon. The chip 104 is die-bonded to the end of one of the leads 101b using an adhesive 103.

【０００４】通常、半導体発光層１１１は、導電型がｐ
型の半導体層（ｐ層）と導電型がｎ型の半導体層（ｎ
層）の積層からなるｐｎ接合層を有する。上層となる一
方の導伝型の半導体層の一部はエッチング除去され、基
板表面に、ｐ層、ｎ層の各表面が露出し、この上に電極
１１２ａ、１１２ｂが形成される。各電極はボンディン
グワイヤ１０５ａ、１０５ｂによって外部への引き出し
電極であるリード１０１ａ、１０１ｂにそれぞれ接続さ
れる。さらに上記リード１０１ａ、１０１ｂの端部、チ
ップ１０４、およびボンディングワイヤ１０５ａ、１０
５ｂは透明な樹脂成型体１０６中にモールドされる。Usually, the semiconductor light emitting layer 111 has a conductivity type of p
Semiconductor layer (p layer) and a semiconductor layer of conductivity type n (n
Layer). A portion of one of the conductive semiconductor layers to be the upper layer is removed by etching, and the respective surfaces of the p layer and the n layer are exposed on the substrate surface, and the electrodes 112a and 112b are formed thereon. Each electrode is connected to a lead 101a, 101b, which is an extraction electrode to the outside, by bonding wires 105a, 105b, respectively. Further, the ends of the leads 101a and 101b, the chip 104, and the bonding wires 105a and 105a
5b is molded in a transparent resin molded body 106.

【０００５】図８に示すように、通常の発光ダイオード
は、半導体発光層が形成されている基板表面側を発光面
とし、図中矢印αで示す基板の上部方向に進行する光を
出力光として用いている。樹脂成型体１０６は、図に示
すように光の出力方向の外形が曲面状になっており、出
力光を集光する効果を有している。As shown in FIG. 8, a normal light emitting diode has a light emitting surface on a substrate surface side on which a semiconductor light emitting layer is formed, and outputs light traveling in an upper direction of the substrate indicated by an arrow α in the figure as output light. Used. As shown in the drawing, the resin molded body 106 has a curved outer shape in the light output direction, and has an effect of condensing the output light.

【０００６】半導体発光層１１１で発せられる光の進行
方向は基板上部方向に限らず基板横方向、下方向も存在
する。そこで、これらの光を効率的に用いる為に、同図
中に示すように、チップ１０４の外周囲に反射鏡１０２
を備える試みもなされている。反射鏡１０２は、半導体
発光層１１１から基板の横方向、および下方向に漏れる
光をすり鉢状の内壁面で反射し、図中上向き方向の出力
光に変えている。[0006] The traveling direction of light emitted from the semiconductor light emitting layer 111 is not limited to the upper direction of the substrate, but also exists in the lateral direction and the lower direction of the substrate. Therefore, in order to use these lights efficiently, as shown in FIG.
Attempts have been made to provide. The reflecting mirror 102 reflects the light leaking from the semiconductor light emitting layer 111 in the lateral direction and the downward direction of the substrate on the inner wall of the mortar, and converts the light into upward output light in the figure.

【０００７】発光ダイオードから発せられる光の波長
は、用いられる半導体発光層の材質によって可視域から
赤外域まで複数の波長が存在する。例えば半導体発光層
としてガリウム砒素（ＧａＡｓ）系材料を用いる発光ダ
イオードは赤色領域の光を、窒化ガリウム（ＧａＮ）系
材料を用いる発光ダイオードは青色領域の光を出力す
る。There are a plurality of wavelengths of light emitted from the light emitting diode from the visible range to the infrared range depending on the material of the semiconductor light emitting layer used. For example, a light emitting diode using a gallium arsenide (GaAs) material as a semiconductor light emitting layer outputs light in a red region, and a light emitting diode using a gallium nitride (GaN) material outputs light in a blue region.

【０００８】これらの半導体発光層は、一般にエピタキ
シャル成長法を用いて形成されるので、半導体発光層の
種類により、使用する基板の種類が限定される。例え
ば、半導体発光層としてＧａＡｓを用いる場合は、基板
もＧａＡｓ系の材料が用いられる。半導体発光層がＧａ
Ｎの場合は、サファイア基板を用いることが多い。[0008] Since these semiconductor light emitting layers are generally formed by an epitaxial growth method, the type of substrate to be used is limited depending on the type of the semiconductor light emitting layer. For example, when GaAs is used as the semiconductor light emitting layer, a GaAs-based material is also used for the substrate. The semiconductor light emitting layer is Ga
In the case of N, a sapphire substrate is often used.

【０００９】図８に示した従来例の発光装置では、基板
表面にｐ層、ｎ層に対応する２つの電極を形成している
が、導電性を有するＧａＡｓ等の基板を用いる場合は、
基板自体を一方の電極として用いることも可能である。
こうすれば基板表面に形成する電極の数を減らすことが
できる。In the conventional light emitting device shown in FIG. 8, two electrodes corresponding to the p layer and the n layer are formed on the surface of the substrate. However, when a conductive substrate such as GaAs is used,
The substrate itself can be used as one electrode.
By doing so, the number of electrodes formed on the substrate surface can be reduced.

【００１０】[0010]

【発明が解決しようとする課題】図８に示すような従来
の発光装置の構成では、半導体発光層より基板上部方向
に発せられる出力光は、基板表面に形成されている電極
およびこの電極に接続されているボンディングワイヤに
よって遮光される。基板がサファイアのような絶縁性材
料を用いる場合は、基板自体を電極として用いることが
できないので、半導体発光層上にｐ層、ｎ層に接続され
る電極を形成しなければならず、これらの遮光物の存在
により実効的な発光出力が低下する。In the structure of the conventional light emitting device shown in FIG. 8, the output light emitted from the semiconductor light emitting layer toward the upper part of the substrate is connected to the electrode formed on the substrate surface and to the electrode. The light is shielded by the bonding wire. When an insulating material such as sapphire is used for the substrate, the substrate itself cannot be used as an electrode. Therefore, electrodes connected to the p-layer and the n-layer must be formed on the semiconductor light-emitting layer. The effective light emission output is reduced due to the presence of the light shielding material.

【００１１】また、半導体発光層での発光は、熱の発生
を伴う。発光効率を維持する為にはこの熱を放熱できる
構造を有することが望まれる。一般に、ＧａＡｓ基板の
ように、導電性を有する基板は熱伝導性もよいので、半
導体発光層で発生した熱は、基板を介してリードに流れ
る。即ち、基板とリードがヒートシンクの役割を果た
す。Light emission from the semiconductor light emitting layer involves generation of heat. In order to maintain luminous efficiency, it is desirable to have a structure that can radiate this heat. Generally, a substrate having conductivity, such as a GaAs substrate, has good thermal conductivity, so that heat generated in the semiconductor light emitting layer flows to the leads through the substrate. That is, the substrate and the lead serve as a heat sink.

【００１２】しかし、サファイア基板のように、絶縁性
の基板は一般に熱伝導性が悪いため、基板とリードがヒ
ートシンクとしての機能を果たしにくい。However, since an insulating substrate such as a sapphire substrate generally has poor thermal conductivity, it is difficult for the substrate and the lead to function as a heat sink.

【００１３】本発明の目的は、実効的な発光出力を改善
できる構成を有する発光装置を提供することである。An object of the present invention is to provide a light-emitting device having a configuration capable of improving an effective light-emitting output.

【００１４】本発明の別の目的は、ヒートシンク機能を
補充する構造を有する発光装置を提供することである。Another object of the present invention is to provide a light emitting device having a structure for supplementing a heat sink function.

【００１５】[0015]

【課題を解決するための手段】本発明の発光装置の第１
の特徴は、半導体発光層と、前記半導体発光層の発光波
長に対し透明であり、表面に前記半導体発光層が形成さ
れた基板と、前記半導体発光層上に形成された少なくと
も１の電極と、一対のリードと、前記基板および前記一
対のリードの端部が、前記発光波長に対し透明な樹脂材
でダイボンディングされた平坦な端面を有し、前記半導
体発光層から前記基板裏面方向に進行する出力光と同一
方向に凸な外形を有し、前記発光波長に対し透明な第１
樹脂成型体と、一方の端部を前記半導体発光層上の前記
電極に、他方の端部を前記一対のリードにそれぞれ接続
したボンディングワイヤと、前記一対のリードの一部、
前記基板、前記半導体発光層、および前記ボンディング
ワイヤをモールドする第２樹脂成型体とを有することで
ある。The first aspect of the light emitting device according to the present invention is as follows.
The features of the semiconductor light-emitting layer, a substrate that is transparent to the emission wavelength of the semiconductor light-emitting layer, the surface of which the semiconductor light-emitting layer is formed, and at least one electrode formed on the semiconductor light-emitting layer, The pair of leads, the ends of the substrate and the pair of leads have flat end faces die-bonded with a resin material transparent to the emission wavelength, and advance from the semiconductor light emitting layer toward the back surface of the substrate. A first outer shape having a convex shape in the same direction as the output light and transparent to the emission wavelength;
A resin molded body, a bonding wire having one end connected to the electrode on the semiconductor light emitting layer, and the other end connected to the pair of leads, a part of the pair of leads,
A second resin molded body that molds the substrate, the semiconductor light emitting layer, and the bonding wire.

【００１６】上記第１の特徴により、出力光の進行方向
には電極やボンディングワイヤ等の遮光物がないため、
実効的な出力光の強度を上げることができる。また、半
導体発光層上の電極の接続は、ワイヤボンディング法に
よって行う為、確実な接続が得られる。According to the first feature, since there is no light-shielding object such as an electrode or a bonding wire in the traveling direction of the output light,
The effective output light intensity can be increased. Further, since the connection of the electrodes on the semiconductor light emitting layer is performed by the wire bonding method, a reliable connection can be obtained.

【００１７】本発明の発光装置の第２の特徴は、半導体
発光層と、前記半導体発光層の発光波長に対し透明であ
り、表面に前記半導体発光層が形成された基板と、前記
半導体発光層上に形成される少なくとも１の電極と、一
対のリードと、前記基板および前記一対のリードの端部
が、前記発光波長に対し透明な樹脂材で表面に接着固定
された前記発光波長に対し透明な基材と、一方の端部を
前記半導体発光層上の前記電極に、他方の端部を前記リ
ードにそれぞれ接続したボンディングワイヤと、前記リ
ードの一部、前記基板、前記半導体発光層、前記基材お
よび前記ボンディングワイヤをモールドするとともに、
前記半導体発光層より前記基板裏面方向に進行する出力
光と同一方向に凸な外形を有する樹脂成型体とを有する
ことである。A second feature of the light emitting device of the present invention is that the semiconductor light emitting layer, a substrate transparent to the emission wavelength of the semiconductor light emitting layer, the surface of which is provided with the semiconductor light emitting layer, At least one electrode formed thereon, a pair of leads, and an end of the substrate and the pair of leads are adhered and fixed to a surface with a resin material transparent to the emission wavelength, and are transparent to the emission wavelength. Base material, a bonding wire having one end connected to the electrode on the semiconductor light emitting layer, and the other end connected to the lead, a part of the lead, the substrate, the semiconductor light emitting layer, While molding the base material and the bonding wire,
A resin molded body having an outer shape that is convex in the same direction as the output light traveling from the semiconductor light emitting layer toward the back surface of the substrate.

【００１８】上記第２の特徴により、出力光の進行方向
には電極やボンディングワイヤ等の遮光物がないため、
実効的な出力光の強度を上げることができる。また、半
導体発光層上の電極の接続は、ワイヤボンディング法に
よって行う為、確実な接続が得られる。さらに、基材上
に半導体発光層を有する基板と、リードの端部を予めダ
イボンディングすることができるので、１回の工程で樹
脂モールドとレンズ効果を有する樹脂成型体を形成でき
る。According to the second feature, since there is no light-shielding object such as an electrode or a bonding wire in the traveling direction of the output light,
The effective output light intensity can be increased. Further, since the connection of the electrodes on the semiconductor light emitting layer is performed by the wire bonding method, a reliable connection can be obtained. Furthermore, since the substrate having the semiconductor light emitting layer on the base material and the ends of the leads can be die-bonded in advance, a resin mold and a resin molded body having a lens effect can be formed in one process.

【００１９】本発明の発光装置の第３の特徴は、半導体
発光層がｎ型の導電型を有する窒化ガリウム系半導体層
とｐ型の導電型を有する窒化ガリウム系半導体層の積層
であり、前記基板がサファイアであることである。A third feature of the light emitting device of the present invention is that the semiconductor light emitting layer is a lamination of a gallium nitride based semiconductor layer having n-type conductivity and a gallium nitride based semiconductor layer having p type conductivity. The substrate is sapphire.

【００２０】上記第３の特徴により、実効的な出力強度
がより高く、電気的信頼性がより高い青色発光ダイオー
ドを提供できる。According to the third feature, a blue light emitting diode having higher effective output intensity and higher electrical reliability can be provided.

【００２１】本発明の発光装置の第４の特徴は、前記半
導体発光層の外周囲に、前記発光波長の光を反射する反
射鏡を備えることである。A fourth feature of the light emitting device according to the present invention is that a light reflecting mirror for reflecting light having the emission wavelength is provided around the semiconductor light emitting layer.

【００２２】上記第４の特徴により、半導体発光層から
横方向等に漏れる光を上記反射鏡によって、半導体発光
層から基板裏面方向に向かう出力光の進行方向と平行な
進行方向を有する光に変換することができ、実質的な出
力光の強度をさらに上げることができる。According to the fourth feature, light leaking from the semiconductor light emitting layer in a lateral direction or the like is converted by the reflecting mirror into light having a traveling direction parallel to the traveling direction of output light from the semiconductor light emitting layer toward the back surface of the substrate. And the substantial output light intensity can be further increased.

【００２３】本発明の発光装置の第５の特徴は、前記ボ
ンディングワイヤの少なくともいずれか１の径が２５μ
ｍより太く、５０μｍ以下であることである。A fifth feature of the light emitting device according to the present invention is that at least one of the bonding wires has a diameter of 25 μm.
m and 50 μm or less.

【００２４】上記第５の特徴により、半導体発光層で発
生する熱に対するボンディングワイヤの有する放熱効果
を増大させることができる。なお、ボンディングワイヤ
の径を５０μｍ以下とすることで、ボンディング時にチ
ップにかかる負担を抑制できる。According to the fifth feature, the heat radiation effect of the bonding wire to the heat generated in the semiconductor light emitting layer can be increased. By setting the diameter of the bonding wire to 50 μm or less, the load on the chip during bonding can be suppressed.

【００２５】本発明の発光装置の第６の特徴は、半導体
発光層上の１の電極と前記一対のリードの一方とを接続
する前記ボンディングワイヤの数が複数本であることで
ある。A sixth feature of the light emitting device of the present invention is that the number of the bonding wires connecting one electrode on the semiconductor light emitting layer and one of the pair of leads is plural.

【００２６】上記第６の特徴により、半導体発光層で発
生する熱に対するボンディングワイヤの有する放熱効果
を増大させることができる。According to the sixth feature, the heat radiation effect of the bonding wire to the heat generated in the semiconductor light emitting layer can be increased.

【００２７】本発明の発光装置の第７の特徴は、反射鏡
が、前記リードと同じ材質で形成されていることであ
る。A seventh feature of the light emitting device according to the present invention is that the reflecting mirror is formed of the same material as the lead.

【００２８】上記第７の特徴により、リードと反射鏡が
一体となったリードフレームを製造工程で用いることが
できる。According to the seventh feature, a lead frame in which a lead and a reflecting mirror are integrated can be used in a manufacturing process.

【００２９】[0029]

【００３０】[0030]

【００３１】[0031]

【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００３２】まず、第１の実施の形態の発光装置につい
て図１を参照して説明する。First, the light emitting device of the first embodiment will be described with reference to FIG.

【００３３】図１に示す発光装置は、基板としていずれ
も上述のサファイア基板のように発光波長に対しほぼ透
明なものを用いており、半導体発光層から基板裏面方向
に向かう光を出力光として利用している。これに伴い、
基板裏面側に図中下側に凸の略砲弾状の形状を有する第
１樹脂成形体を備えている。The light emitting device shown in FIG. 1 uses a substrate substantially transparent to the emission wavelength like the above-mentioned sapphire substrate, and uses light traveling from the semiconductor light emitting layer toward the back surface of the substrate as output light. are doing. Along with this,
A first resin molded body having a substantially shell-like shape projecting downward in the figure is provided on the back surface of the substrate.

【００３４】図１中に示すチップ１６は、サファイア等
の可視域で透明な基板１１上に、ｎ型の導電型を有する
半導体層（ｎ層）１２とｐ型の導電型を有する半導体層
（ｐ層）１３のｐｎ接合からなる半導体発光層を有す
る。これらの半導体層としては、例えば青色の光を発光
する窒化ガリウム系半導体層等を用いることができる。A chip 16 shown in FIG. 1 has a semiconductor layer (n layer) 12 having an n-type conductivity and a semiconductor layer (p-type conductivity) on a transparent substrate 11 such as sapphire or the like in a visible region. (p layer) 13 having a semiconductor light emitting layer composed of a pn junction. As these semiconductor layers, for example, a gallium nitride-based semiconductor layer that emits blue light can be used.

【００３５】上層のｐ層１３は一部エッチング除去さ
れ、下層のｎ層１２の一部が基板表面に露出している。
ｐ層１３の表面には電極１５、ｎ層１２の露出面には電
極１４が形成される。The upper p-layer 13 is partially removed by etching, and a part of the lower n-layer 12 is exposed on the substrate surface.
An electrode 15 is formed on the surface of the p-layer 13 and an electrode 14 is formed on the exposed surface of the n-layer 12.

【００３６】第１樹脂成形体２１は平坦な端面Ｓ１を有
しており、チップ１６はこの平坦な端面Ｓ１上に透明樹
脂接着材２２を用いてダイボンディングされる。同一端
面Ｓ１上には、透明樹脂接着材２２を用いて、２本の外
部引き出し電極であるリード２３ａ、２３ｂも接着固定
される。半導体発光層上の電極１４、１５は、ボンディ
ングワイヤ２５ａ、２５ｂによって、リード２３ａ、２
３ｂに電気的に接続される。The first resin molded body 21 has a flat end surface S 1, and the chip 16 is die-bonded on the flat end surface S 1 using a transparent resin adhesive 22. On the same end surface S1, the leads 23a and 23b, which are two external extraction electrodes, are also adhesively fixed using a transparent resin adhesive 22. The electrodes 14 and 15 on the semiconductor light emitting layer are connected to the leads 23a and 2b by bonding wires 25a and 25b.
3b.

【００３７】チップ１６の外周囲には、ランプシェード
形状の反射鏡２４が備えられる。この反射鏡２４は、半
導体発光層から図中横方向もしくは上方に発せられる光
を内壁で反射し、図中下方へ進行する光に変換する。こ
の反射鏡２４は、同図に示すように、リード２３ｂに連
続して形成されていてもよい。A lamp mirror-shaped reflecting mirror 24 is provided around the outer periphery of the chip 16. The reflecting mirror 24 reflects light emitted from the semiconductor light emitting layer in the horizontal direction or upward in the figure on the inner wall, and converts the light into light traveling downward in the figure. The reflecting mirror 24 may be formed continuously with the lead 23b as shown in FIG.

【００３８】ボンディングワイヤ２５ａ、２５ｂにより
リード２３ａ、２３ｂに電気的に接続されたチップ１６
は、その周囲を第２樹脂成形体３１によってモールドさ
れる。Chip 16 electrically connected to leads 23a, 23b by bonding wires 25a, 25b
Is molded around by a second resin molded body 31.

【００３９】２本のリード２３ａ、２３ｂは、ボンディ
ングワイヤ２５ａ、２５ｂとの接続部の近傍で端面Ｓ１
に対し垂直方向に折り曲げられているため、第２樹脂成
形体３１の外部には、端面Ｓ１に対しほぼ垂直方向の２
本のリード２３ａ、２３ｂが取り出される。The two leads 23a and 23b are connected to the end surfaces S1 near the connection with the bonding wires 25a and 25b.
Is bent in the vertical direction with respect to the second resin molded body 31, and the outer surface of the second resin molded body 31 is substantially perpendicular to the end face S 1.
The book leads 23a and 23b are taken out.

【００４０】この第１の実施の形態における発光装置で
は、半導体発光層より基板裏面方向に発せられた光が、
発光波長に対し透明な基板を通過し基板裏面より出力さ
れる。さらに基板裏面より出力された光は、透明樹脂接
着材２２を介し、第１樹脂成形体２１を通過し外部に出
力される。第１樹脂成形体２１の外形形状によるレンズ
効果により、出力光は端面Ｓ１に対し垂直な方向に集光
される。In the light emitting device according to the first embodiment, the light emitted from the semiconductor light emitting layer toward the back surface of the substrate is
The light passes through a substrate transparent to the emission wavelength and is output from the back surface of the substrate. Further, light output from the back surface of the substrate passes through the first resin molded body 21 via the transparent resin adhesive 22 and is output to the outside. The output light is condensed in a direction perpendicular to the end face S1 by the lens effect due to the outer shape of the first resin molded body 21.

【００４１】基板裏面には基板表面のように発光波長を
遮光する電極やボンディングワイヤは存在しないため、
半導体発光層で発せられた下方向に向かう光は、光強度
をほぼ維持したまま第１樹脂成型体２１より外部に出力
される。Since there is no electrode or bonding wire on the back surface of the substrate that blocks the emission wavelength unlike the substrate surface,
The downward light emitted from the semiconductor light emitting layer is output to the outside from the first resin molded body 21 while maintaining the light intensity substantially.

【００４２】次に、第２の実施の形態の発光装置につい
て図２を参照して説明する。Next, a light emitting device according to a second embodiment will be described with reference to FIG.

【００４３】第１の実施の形態の場合と同様に、半導体
発光層から基板裏面に向かう光を出力光として利用す
る。第１の実施の態様に示す構成と異なる点は、半導体
発光層を有するチップ５４とリード５２ａ、５２ｂが透
明な板状基材５１上に接着固定されている点である。さ
らに、樹脂成型体が第１樹脂成型体と第２樹脂成型体と
に分かれず、一体型である点である。As in the case of the first embodiment, light traveling from the semiconductor light emitting layer toward the back surface of the substrate is used as output light. The difference from the configuration shown in the first embodiment is that a chip 54 having a semiconductor light emitting layer and leads 52a and 52b are bonded and fixed on a transparent plate-shaped base material 51. Further, the resin molded body is not divided into the first resin molded body and the second resin molded body, but is an integral type.

【００４４】図２に示すように、透明な板状基材５１上
にチップ５４とリード５２ａ、５２ｂを透明樹脂接着材
５８で接着固定され、さらにチップ５４上の電極は、ボ
ンディングワイヤ５５ａ、５５ｂで接続される。また、
チップ５４の周囲には、反射鏡５３が備えられている。As shown in FIG. 2, a chip 54 and leads 52a and 52b are bonded and fixed on a transparent plate-like base material 51 with a transparent resin adhesive 58, and the electrodes on the chip 54 are bonded with bonding wires 55a and 55b. Connected by Also,
A reflector 53 is provided around the chip 54.

【００４５】この第２の実施の形態における発光装置に
おいても、基板が発光波長に対し透明なので、半導体発
光層より基板裏面方向に発せられた光は、基板を通過し
基板裏面より出力される。基板裏面には基板表面のよう
に発光波長を遮光する電極やボンディングワイヤが存在
しないため、半導体発光層で発せられ、図中下方向に向
かう出力光は、光強度をほぼ維持したまま基板裏面より
出力される。Also in the light emitting device according to the second embodiment, since the substrate is transparent to the emission wavelength, light emitted from the semiconductor light emitting layer toward the back surface of the substrate passes through the substrate and is output from the back surface of the substrate. On the back side of the substrate, there are no electrodes or bonding wires that block the emission wavelength, as in the front surface of the substrate.Therefore, the output light emitted from the semiconductor light emitting layer in the downward direction in the figure is output from the back surface of the substrate while maintaining almost the light intensity. Is output.

【００４６】さらに基板裏面より出力された光は、透明
樹脂接着材５８を介し、透明な板状基材５１と樹脂成形
体５７を通過し外部に出力される。光出力方向の樹脂成
形体５７の外形は、曲面を有しており、この形状による
レンズ効果により、出力光は透明な板状基材５１の面Ｓ
１に対し垂直な方向に集光される。Further, the light output from the back surface of the substrate passes through the transparent plate-shaped base material 51 and the resin molded body 57 via the transparent resin adhesive 58 and is output to the outside. The outer shape of the resin molded body 57 in the light output direction has a curved surface, and the output light is transmitted to the surface S of the transparent plate-shaped base material 51 by the lens effect due to this shape.
Light is collected in a direction perpendicular to 1.

【００４７】[0047]

【実施例】上述した第１の実施の形態の具体的な実施例
について説明する。ここでは、窒化ガリウム系半導体層
を半導体発光層とし、基板としてサファイアを用いる青
色発光ダイオードの作製方法を例にとって説明する。EXAMPLE A specific example of the first embodiment will be described. Here, a method for manufacturing a blue light emitting diode using a gallium nitride based semiconductor layer as a semiconductor light emitting layer and using sapphire as a substrate will be described as an example.

【００４８】まず、図３（Ａ）〜図３（Ｃ）を参照し
て、チップの作製工程について説明する。First, the steps of manufacturing a chip will be described with reference to FIGS.

【００４９】図３（Ａ）に示すように、厚み約２００μ
ｍのサファイア（Ａｌ2Ｏ3）基板上に、ＭＯＣＶＤ（ME
TAL ORGANIC CHEMICAL VAPOR DEPOSITION）法を用
いて、約４μｍのｎ型の窒化ガリウム（ｎ−ＧａＮ）層
１２と約１μｍのｐ型の窒化ガリウム（ｐ−ＧａＮ）層
１３をエピタキシャル成長させる。As shown in FIG. 3A, the thickness is about 200 μm.
m sapphire (Al 2 O 3 ) substrate, MOCVD (ME
Using a TAL ORGANIC VAPOR DEPOSITION method, an n-type gallium nitride (n-GaN) layer 12 of about 4 μm and a p-type gallium nitride (p-GaN) layer 13 of about 1 μm are epitaxially grown.

【００５０】このエピタキシャル成長条件は、雰囲気圧
力を常圧とし、基板温度を８００℃〜１０００℃、反応
ガスとして、トリメチルガリウム（Ｇａ（ＣＨ3）3）と
アンモニア（ＮＨ3）、キャリアガスとして水素（Ｈ2）
と窒素（Ｎ2）の混合ガスを用いる。The conditions for the epitaxial growth are as follows: the atmospheric pressure is normal pressure; the substrate temperature is 800 ° C. to 1000 ° C .; trimethyl gallium (Ga (CH 3 ) 3 ) and ammonia (NH 3 ) as reaction gases; H 2 )
And a mixed gas of nitrogen (N 2 ).

【００５１】ｎ型ドーピングガスとしてはモノシラン
（ＳｉＨ4）、ｐ型ドーピングガスとしてはビスシクロ
ペンタディエニールマグネシウム（Ｃｐ２Ｍｇ）等を用
いる。ｎ−ＧａＮ層１２とｐ−ＧａＮ層１３は、途中ド
ーピングガスを変更することにより、同一チャンバ内で
連続して形成することができる。Monosilane (SiH 4 ) is used as the n-type doping gas, and biscyclopentadienyl magnesium (Cp2Mg) is used as the p-type doping gas. The n-GaN layer 12 and the p-GaN layer 13 can be continuously formed in the same chamber by changing the doping gas on the way.

【００５２】図３（Ｂ）に示すように、ｐ−ＧａＮ層１
３の一部をエッチング除去し、ｎ−ＧａＮ層１２の露出
面を形成する。この工程では、例えばＳｉＯ2膜をエッ
チングマスクとして、Ｃｌ2とＢＣｌ2の混合ガスをエッ
チングガスとして用い、ｐ−ＧａＮ層１３をドライエッ
チングすればよい。エッチング後、不要となったエッチ
ングマスクはエッチング除去する。As shown in FIG. 3B, the p-GaN layer 1
3 is removed by etching to form an exposed surface of the n-GaN layer 12. In this step, the p-GaN layer 13 may be dry-etched using, for example, a SiO 2 film as an etching mask and a mixed gas of Cl 2 and BCl 2 as an etching gas. After the etching, the unnecessary etching mask is removed by etching.

【００５３】図３（Ｃ）に示すように、ｐ−ＧａＮ層１
３表面上、およびｎ−ＧａＮ層１２露出面上にそれぞ
れ、スパッタリング法を用いて、電極１５と電極１４を
形成する。電極１５としてはニッケル金（ＮｉＡｕ）
膜、電極１４としてはチタン金（ＴｉＡｕ）膜等を形成
する。As shown in FIG. 3C, the p-GaN layer 1
The electrodes 15 and 14 are formed on the three surfaces and on the exposed surface of the n-GaN layer 12 by using the sputtering method. Nickel gold (NiAu) for the electrode 15
As the film and the electrode 14, a titanium gold (TiAu) film or the like is formed.

【００５４】電極１４、１５を形成した後、ウエハをチ
ップごとに分離して、チップ１６を得る。チップの形状
は、一辺約３００μｍの矩形とする。After the electrodes 14 and 15 have been formed, the wafer is separated into chips to obtain chips 16. The shape of the chip is a rectangle having a side of about 300 μm.

【００５５】つぎに、図４（Ａ）に示すように、透明な
第１樹脂成型体２１を形成する。この工程において、第
１樹脂成型体２１は、２液性のエポキシ樹脂を型材に流
し込み、常温で固化させることにより得られる。同図に
示すように、第１樹脂成型体２１は、一方に平坦な端面
Ｓ１を有し、他方に略砲弾形状の外形を有する。Next, as shown in FIG. 4A, a transparent first resin molded body 21 is formed. In this step, the first resin molded body 21 is obtained by pouring a two-part epoxy resin into a mold and solidifying it at room temperature. As shown in the figure, the first resin molded body 21 has a flat end surface S1 on one side and a substantially shell-shaped outer shape on the other.

【００５６】図４（Ａ）に示すように、端面Ｓ１上に、
この第１樹脂成型体２１と同質なエポキシ樹脂からなる
透明樹脂接着材２２を塗布し、チップ１６をこの透明樹
脂接着材２２を用いて、第１樹脂成型体の端面Ｓ１上に
ダイボンディングする。As shown in FIG. 4A, on the end face S1,
A transparent resin adhesive 22 made of the same epoxy resin as the first resin molded body 21 is applied, and the chip 16 is die-bonded to the end surface S1 of the first resin molded body using the transparent resin adhesive 22.

【００５７】図４（Ｂ）に示すように、第１樹脂成型体
２１の端面Ｓ１上に、透明樹脂接着材２２を用いてリー
ド２３ａと２３ｂを接着固定する。リード２３ｂは、そ
の端部にランプシェード形状の反射鏡２４を備えてお
り、チップ１６に反射鏡２４をかぶせるように装着し、
チップ１６の外周囲をこの反射鏡２４でおおう。As shown in FIG. 4B, the leads 23 a and 23 b are bonded and fixed on the end surface S 1 of the first resin molded body 21 using the transparent resin adhesive 22. The lead 23b is provided with a reflector 24 in the shape of a lamp shade at the end thereof, and is mounted so that the reflector 16 is placed over the chip 16.
The outer periphery of the chip 16 is covered with the reflecting mirror 24.

【００５８】従来の反射鏡は、図８を参照するとわかる
ように、すり鉢状の形状をしているが、本実施例で用い
る反射鏡２４は、出力光の進行方向が図８の従来型と逆
なことから、すり鉢状ではなく、上部の径が狭く、下部
の径が広いランプシェード型の形状とする。半導体発光
層から横方向等に漏れる光を反射鏡内壁で受けるため、
反射鏡の高さは、チップの高さよりやや高く設定する。As shown in FIG. 8, the conventional reflecting mirror has a mortar-like shape. However, the reflecting mirror 24 used in this embodiment has a traveling direction of the output light different from that of the conventional type shown in FIG. On the contrary, the shape is not a mortar but a lampshade type having a narrow upper portion and a wider lower portion. In order to receive light leaking in the lateral direction from the semiconductor light emitting layer on the inner wall of the reflector,
The height of the reflector is set slightly higher than the height of the chip.

【００５９】図５（Ａ）に示すように、ボンディングワ
イヤ２５ａ、２５ｂで半導体発光層上の電極１４と１５
をリード２３ａ、２３ｂに電気的に接続する。As shown in FIG. 5A, the electrodes 14 and 15 on the semiconductor light emitting layer are bonded by bonding wires 25a and 25b.
Is electrically connected to the leads 23a and 23b.

【００６０】通常用いられるボンディングワイヤは２５
μｍ径の金（Ａｕ）が多いが、ここでは、少なくともｐ
ｎ接合層の上部に接続する一方のボンディングワイヤ２
５ｂは４０μｍの径のＡｕのボンディングワイヤとす
る。The number of commonly used bonding wires is 25.
Although gold (Au) having a diameter of μm is large, at least p
One bonding wire 2 connected to the upper part of the n-junction layer
5b is an Au bonding wire having a diameter of 40 μm.

【００６１】なお、チップ上にワイヤをボンディングす
る際には、ワイヤ先端のボールをつぶす圧力が必要とな
る。ワイヤ径が太い程、この時必要とされる圧力は大き
くなる。よって、ボンディング時にチップにかかる負担
を制限するためには、５０μｍ以下のボンディングワイ
ヤを用いることが望まれる。When bonding a wire on a chip, a pressure is needed to crush the ball at the tip of the wire. The larger the wire diameter, the greater the required pressure at this time. Therefore, in order to limit the load on the chip during bonding, it is desirable to use a bonding wire of 50 μm or less.

【００６２】図５（Ｂ）を参照して、後続する工程につ
いて説明する。第１樹脂成型体２１の端面Ｓ１上に装着
された２本のリード２３ａ、２３ｂを、第１樹脂成型体
２１の外周囲内で端面Ｓ１に対し垂直な方向に折り曲げ
る。この後、同図に示すような、プラスチック性の型材
４１に、第１樹脂成型体２１を沈める。第１樹脂成型体
の端面Ｓ１上のボンディングワイヤ部分が十分に沈む高
さまで第１樹脂成型体と同一材料のエポキシ樹脂で埋め
る。エポキシ樹脂が固化した後、型材４１から外せば、
図１に示した第１の実施の態様の発光装置を得ることが
できる。Referring to FIG. 5B, the subsequent steps will be described. The two leads 23a and 23b mounted on the end surface S1 of the first resin molded body 21 are bent in a direction perpendicular to the end surface S1 within the outer periphery of the first resin molded body 21. Thereafter, the first resin molded body 21 is immersed in a plastic mold 41 as shown in FIG. The first resin molded body is filled with an epoxy resin of the same material as that of the first resin molded body until the bonding wire portion on the end surface S1 of the first resin molded body sufficiently sinks. After the epoxy resin has solidified, remove it from the mold 41,
The light emitting device according to the first embodiment shown in FIG. 1 can be obtained.

【００６３】次に、図６（Ａ）および図６（Ｂ）を参照
し、上述した第２の実施の形態に対応する具体的な実施
例について説明する。ここでも、窒化ガリウム系半導体
層を半導体発光層とし、基板としてサファイアを用いる
青色発光ダイオードの作製方法を例にとって説明する。Next, a specific example corresponding to the above-described second embodiment will be described with reference to FIGS. 6A and 6B. Here, a method of manufacturing a blue light emitting diode using a gallium nitride based semiconductor layer as a semiconductor light emitting layer and using sapphire as a substrate will be described as an example.

【００６４】図６（Ａ）に示すように、チップ５４は、
上述した実施例１と同様な方法を用いて作製し、透明な
板状基材５１上に実施例１で用いたものと同様な透明樹
脂接着材（図示せず）を用いて接着固定する。As shown in FIG. 6A, the chip 54
It is manufactured using the same method as in the first embodiment described above, and is adhered and fixed on the transparent plate-like base material 51 using the same transparent resin adhesive (not shown) as that used in the first embodiment.

【００６５】ここで用いる透明な板状基材５１は、後の
工程でチップ５４をモールドする樹脂成型体と同じエポ
キシ樹脂からなる基材でも、サファイア基材でもよい。
発光波長に対し、透明な基材であればよい。透明な板状
基材５１の大きさは特に限定されない。基材上にチップ
５４とリードを搭載できるサイズであればよい。The transparent plate-like base material 51 used here may be a base material made of the same epoxy resin as the resin molded body for molding the chip 54 in a later step, or a sapphire base material.
Any substrate that is transparent to the emission wavelength may be used. The size of the transparent plate-shaped substrate 51 is not particularly limited. Any size can be used as long as the chip 54 and the leads can be mounted on the base material.

【００６６】チップ５４の外周囲には、反射鏡５３と２
本のリード５２ａと５２ｂを備える。チップと同様に透
明樹脂接着材（図示せず）を用いて透明な板状基材５１
上に接着固定する。チップ５４上の電極とリードは、ボ
ンディングワイヤ５５ａ〜５５ｃで電気的に接続され
る。なお、図６（Ａ）に示すように、ｐｎ接合層上に形
成される一方の電極と一方のリードの接続に、複数のボ
ンディングワイヤ５５ｂ、５５ｃを用いてもよい。On the outer periphery of the chip 54, the reflecting mirrors 53 and 2
It has book leads 52a and 52b. A transparent plate-like base material 51 using a transparent resin adhesive (not shown) as in the case of the chip.
Adhesively fix on top. The electrodes and the leads on the chip 54 are electrically connected by bonding wires 55a to 55c. As shown in FIG. 6A, a plurality of bonding wires 55b and 55c may be used to connect one electrode formed on the pn junction layer and one lead.

【００６７】この後、リード５２ａと５２ｂを透明な板
状基材５１の基材面に対し垂直方向に折り曲げる。Thereafter, the leads 52a and 52b are bent in a direction perpendicular to the substrate surface of the transparent plate-shaped substrate 51.

【００６８】図６（Ｂ）に示すように、液状のエポキシ
樹脂が入れられたプラスチック性型材５６に、接着固定
されていない側のリードの端部を上方にして、ボンディ
ングワイヤ部分が十分に沈む深さまで透明な板状基材５
１を沈める。なお、板状基材に予め液状エポキシ樹脂を
つけて十分表面をなじませた後、沈めれば、泡の発生を
防ぐことができる。As shown in FIG. 6 (B), the bonding wire portion is sufficiently sunk on the plastic mold material 56 filled with the liquid epoxy resin, with the end of the lead not bonded and fixed upward. Plate-like substrate 5 transparent to depth
Sink 1 In addition, if a liquid epoxy resin is previously applied to the plate-shaped base material to sufficiently adjust the surface and then submerged, the generation of bubbles can be prevented.

【００６９】エポキシ樹脂は、２液性であり常温で一定
時間維持することにより固化できる。固化後、型材５６
から外せば、図２に示した第２の実施の態様の発光装置
を得られる。The epoxy resin is a two-part resin and can be solidified by maintaining it at room temperature for a certain period of time. After solidification, the mold 56
If it is removed, the light emitting device of the second embodiment shown in FIG. 2 can be obtained.

【００７０】図７（Ａ）、図７（Ｂ）は、上述した実施
例の発光装置を作製する為に用いるリードフレームの構
成例を示す図である。リードフレームの材料は、一般に
銅（Ｃｕ）に鉛錫系ハンダをコーティングしたものが多
い。これらの材料は、可視域の発光波長に対し反射効果
を有するため、同質の材料で反射鏡を形成することがで
きる。よって、リードフレーム中に反射鏡とリードとを
一体加工することが可能である。FIGS. 7A and 7B are views showing an example of the configuration of a lead frame used to manufacture the light emitting device of the above-described embodiment. In general, many lead frame materials are obtained by coating copper (Cu) with a lead-tin-based solder. Since these materials have a reflection effect on the emission wavelength in the visible region, the reflector can be formed of the same material. Therefore, it is possible to integrally process the reflector and the lead in the lead frame.

【００７１】図７（Ａ）は、上述の実施例１の発光装置
の作製に使用するリードフレームの構成例を示す。各チ
ップが有する一対のリードが、同一直線状に形成されて
おり、図中左側のリードの端部にランプシェード状に立
体加工した反射鏡を備えている。FIG. 7A shows a configuration example of a lead frame used for manufacturing the light emitting device of the first embodiment. A pair of leads of each chip are formed in the same straight line, and a reflecting mirror which is three-dimensionally processed into a lampshade is provided at the end of the lead on the left side in the drawing.

【００７２】尚、同図に示すように、折り曲げ位置にあ
たるリードの巾を狭くしておけば、折り曲げを容易に行
うことができる。As shown in the figure, if the width of the lead corresponding to the bending position is narrowed, the bending can be easily performed.

【００７３】一方図７（Ｂ）は、上述の実施例２の発光
装置の作製に使用するリードフレームの構成例を示す。
各チップが有する一対のリードが、並列に形成されてお
り、一方のリードの端部に反射鏡を備える。FIG. 7B shows an example of the structure of a lead frame used for manufacturing the light emitting device of the second embodiment.
A pair of leads of each chip are formed in parallel, and one of the leads has a reflector at an end.

【００７４】実施例１、実施例２に示す発光装置によれ
ば、半導体発光層より基板裏面方向に進行する光を出力
光として用いているので、出力光の進行方向に電極やボ
ンディングワイヤ等の遮光物がなく、図８で示すような
従来型の発光装置に較べ、約２倍の強度の出力光を得る
ことができる。According to the light emitting devices shown in the first and second embodiments, the light traveling from the semiconductor light emitting layer toward the back surface of the substrate is used as the output light. There is no light-blocking material, and output light having about twice the intensity can be obtained as compared with a conventional light emitting device as shown in FIG.

【００７５】上述の実施例１、実施例２は、いずれもワ
イヤボンディング法を用いて発光層上の電極とリードを
電気的に接続しているが、接続方法としては、ワイヤボ
ンディング法以外にも、発光層上とリード上の双方に半
田バンプを形成し、上下で半田バンプを押圧接触させる
方法等がある。In each of Embodiments 1 and 2 described above, the electrode and the lead on the light emitting layer are electrically connected by using the wire bonding method. There is a method of forming solder bumps on both the light emitting layer and the lead, and pressing the solder bumps vertically.

【００７６】しかし、一般的に半田バンプによる接続方
法は、接触部双方のバンプの表面が酸化しやすく良好な
電気的接続状態を維持しにくい。また、モールド樹脂と
半田バンプとの熱膨張率の相違から接触部のはがれが生
じることも多く、接続の信頼性に欠ける。これに対し、
上述した実施例で使用するワイヤボンディング法による
電極の接続は、確実な接続が維持できる。また、作業中
に目視で接続状態を確認できる点でも好ましい。However, in general, in the connection method using solder bumps, the surfaces of the bumps at both contact portions are easily oxidized, and it is difficult to maintain a good electrical connection state. Also, the contact portion often peels off due to the difference in the coefficient of thermal expansion between the mold resin and the solder bumps, and the connection lacks reliability. In contrast,
The connection of the electrodes by the wire bonding method used in the above-described embodiment can maintain a reliable connection. It is also preferable in that the connection state can be visually checked during the work.

【００７７】また、実施例１では、ボンディングワイヤ
巾として通常より太い径のものを用いているが、これは
次のような効果をもたらす。In the first embodiment, the width of the bonding wire is larger than usual. However, this has the following effects.

【００７８】半導体発光層での発光は同時に発熱を伴う
ことが多い。基板の熱伝導性が高く、基板がリードに接
続されている場合は、基板とリードがヒートシンクとし
て機能するが、上述の実施例のように熱伝導性の低いサ
ファイア基板を用いる場合は、ヒートシンク効果は期待
できない。Light emission from the semiconductor light-emitting layer often involves heat generation at the same time. When the substrate has high thermal conductivity and the substrate is connected to the lead, the substrate and the lead function as a heat sink. However, when the sapphire substrate having low thermal conductivity is used as in the above-described embodiment, the heat sink effect is obtained. Can not expect.

【００７９】一方、半導体発光層上の電極に接続される
ボンディングワイヤは、熱伝導性が高い為、半導体発光
層で発生する熱をボンディングワイヤを介してリードに
逃すことができる。通常のワイヤ径では、この効果は小
さいが、ワイヤの径を太くすることで、ボンディングワ
イヤとリードによるヒートシンク効果を高めることがで
きる。On the other hand, since the bonding wire connected to the electrode on the semiconductor light emitting layer has high thermal conductivity, heat generated in the semiconductor light emitting layer can be released to the lead via the bonding wire. With a normal wire diameter, this effect is small, but by increasing the diameter of the wire, the heat sink effect by the bonding wire and the lead can be enhanced.

【００８０】また、基板上部より出力光を得る従来の構
成では、ボンディングワイヤの径を太くすることは、遮
光部分を増やすことになり好ましくないが、実施例１の
構成では、基板裏面より出力光を取り出すのでこのよう
な問題はない。実施例２で示した複数本のボンディング
ワイヤの使用は、太いボンディングワイヤを用いた場合
と同様な効果をもたらす。In the conventional configuration in which output light is obtained from the upper portion of the substrate, it is not preferable to increase the diameter of the bonding wire because it increases the number of light-shielding portions. So there is no such problem. The use of a plurality of bonding wires described in the second embodiment has the same effect as the case of using a thick bonding wire.

【００８１】以上、実施例に沿って本発明を説明した
が、本発明は、これらに制限されるものではない。上述
の実施例においては、半導体発光層として、ＧａＮを用
いているが、この他にも発光波長に対し透明な基板を使
用できる半導体発光層なら応用できる。例えば、ガリウ
ムリン（ＧａＰ）やジンクセレン（ＺｎＳｅ）、ガリウ
ムアルミニウム砒素（ＧａＡｌＡｓ）といった材料を用
いることもできる。Although the present invention has been described with reference to the embodiments, the present invention is not limited to these embodiments. In the above embodiment, GaN is used as the semiconductor light emitting layer, but any other semiconductor light emitting layer that can use a substrate transparent to the emission wavelength can be applied. For example, a material such as gallium phosphide (GaP), zinc selenium (ZnSe), or gallium aluminum arsenide (GaAlAs) can be used.

【００８２】実施例では、１半導体発光層を有する単一
チップを樹脂モールドした発光ダイオードの例を示して
いるが、これ以外にも、１チップ上、即ち同一基板上に
互いに異なる波長の光を発光する複数の半導体発光層を
モノリシックに形成したものや、互いに異なる波長の光
を発光する半導体発光層を有する複数のチップを樹脂モ
ールドした発光ダイオードにも応用できる。Although the embodiment shows an example of a light emitting diode in which a single chip having one semiconductor light emitting layer is resin-molded, light of different wavelengths can be applied to one chip, that is, on the same substrate. The present invention is also applicable to a light emitting diode in which a plurality of light emitting semiconductor light emitting layers are formed in a monolithic manner, or a light emitting diode in which a plurality of chips having semiconductor light emitting layers emitting light of different wavelengths are resin-molded.

【００８３】この他、種々の変更、改良、組み合わせ等
が可能なことは当業者に自明であろう。It will be obvious to those skilled in the art that various changes, improvements, combinations, and the like can be made.

【００８４】[0084]

【発明の効果】本発明の発光装置によれば、半導体発光
層から基板裏面方向に進行する光を出力光として用いる
ことができる。光の進行方向には電極やボンディングワ
イヤ等の遮光物がないため、実効的な光出力を上げるこ
とができる。また、半導体発光層上の電極の接続は、ワ
イヤボンディン法によって行う為、確実な接続が得られ
る。According to the light emitting device of the present invention, light traveling from the semiconductor light emitting layer toward the back surface of the substrate can be used as output light. Since there is no light-shielding object such as an electrode or a bonding wire in the light traveling direction, an effective light output can be increased. In addition, since the connection of the electrodes on the semiconductor light emitting layer is performed by the wire bonding method, a reliable connection can be obtained.

【００８５】また、基材上に半導体発光層を有する基板
と、リードの端部を予め接着固定すれば、１回の工程で
樹脂モールドができる。If the substrate having the semiconductor light emitting layer on the base material and the ends of the leads are bonded and fixed in advance, resin molding can be performed in one step.

【００８６】本発明の発光装置の構成においては、半導
体発光層上に形成する電極や電気的接続の為のボンディ
ングワイヤが遮光物とならないので、ワイヤの径を太く
したり、複数にしたりすることもできる。電気的接続を
確実に得ることができるとともに、ボンディングワイヤ
の有するヒートシンク効果を増大させることができる。In the structure of the light emitting device of the present invention, since the electrodes formed on the semiconductor light emitting layer and the bonding wires for electrical connection do not become light-shielding materials, the diameter of the wires may be increased or may be plural. Can also. Electrical connection can be reliably obtained, and the heat sink effect of the bonding wire can be increased.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の態様である発光装置の断
面図である。FIG. 1 is a sectional view of a light emitting device according to a first embodiment of the present invention.

【図２】本発明の第２の実施の態様である発光装置の断
面図である。FIG. 2 is a sectional view of a light emitting device according to a second embodiment of the present invention.

【図３】本発明の第１の実施例におけるチップの作製工
程を説明する為の各工程におけるチップの断面図であ
る。FIG. 3 is a cross-sectional view of the chip in each step for explaining a step of manufacturing the chip in the first embodiment of the present invention.

【図４】本発明の第１の実施例における発光装置の製造
工程を説明する為の各工程における装置の断面図であ
る。FIG. 4 is a cross-sectional view of the device in each step for explaining a manufacturing process of the light-emitting device according to the first embodiment of the present invention.

【図５】本発明の第１の実施例における発光装置の製造
工程を説明する為の各工程における装置の断面図であ
る。FIG. 5 is a cross-sectional view of the device in each step for explaining a manufacturing process of the light-emitting device according to the first embodiment of the present invention.

【図６】本発明の第２の実施例における発光装置の製造
工程を説明する為の装置の斜視図および断面図である。FIGS. 6A and 6B are a perspective view and a cross-sectional view of a light-emitting device according to a second embodiment of the present invention, illustrating the manufacturing process of the light-emitting device.

【図７】本発明の実施例に用いるリードフレームの構成
例を示す平面図である。FIG. 7 is a plan view showing a configuration example of a lead frame used in the embodiment of the present invention.

【図８】従来の発光装置の構成を示す装置の断面図であ
る。FIG. 8 is a sectional view of a device showing a configuration of a conventional light emitting device.

【符号の説明】[Explanation of symbols]

１１・・・基板 １２・・・ｎ層 １３・・・ｐ層 １４、１５・・・電極 １６、５４・・・チップ ２１・・・第１樹脂成型体 ２２、５８・・・透明樹脂接着材 ２３ａ、２３ｂ、５２ａ、５２ｂ・・・リード ２４、５３・・・反射鏡 ２５ａ、２５ｂ、５５ａ、５５ｂ、５５ｃ・・・ボンデ
ィングワイヤ ３１・・・第２樹脂成型体 ５１・・・板状基材 ５７・・・樹脂成型体DESCRIPTION OF SYMBOLS 11 ... Substrate 12 ... N layer 13 ... P layer 14, 15 ... Electrode 16, 54 ... Chip 21 ... 1st resin molding 22, 58 ... Transparent resin adhesive 23a, 23b, 52a, 52b Lead 24, 53 Reflector 25a, 25b, 55a, 55b, 55c Bonding wire 31 Second resin molded body 51 Plate base 57 ・ ・ ・ Resin molded body

Claims (7)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体発光層と、 前記半導体発光層上の発光波長に対し透明であり、表面
に前記半導体発光層が形成された基板と、 前記半導体発光層上に形成された少なくとも１の電極
と、 一対のリードと、 前記基板および前記一対のリードの端部が、前記発光波
長に対し透明な樹脂材で接着固定された平坦な端面を有
し、前記半導体発光層から前記基板裏面方向に進行する
出力光と同一方向に凸な外形を有し、前記発光波長に対
し透明な第１樹脂成型体と、 一方の端部を前記半導体発光層上の前記電極に、他方の
端部を前記一対のリードに接続したボンディングワイヤ
と、 前記一対のリードの一部、前記基板、前記半導体発光
層、および前記ワイヤをモールドする第２樹脂成型体と
を有する発光装置。1. A semiconductor light emitting layer, a substrate transparent to an emission wavelength on the semiconductor light emitting layer, the surface of which is provided with the semiconductor light emitting layer, and at least one electrode formed on the semiconductor light emitting layer And a pair of leads, an end of the substrate and the pair of leads has a flat end surface adhered and fixed with a resin material transparent to the emission wavelength, and extends from the semiconductor light emitting layer toward the back surface of the substrate. A first resin molded body having an outer shape that is convex in the same direction as the traveling output light, and transparent to the emission wavelength, one end of the first resin molded body being the electrode on the semiconductor light emitting layer, and the other end being A light emitting device comprising: a bonding wire connected to a pair of leads; a part of the pair of leads, the substrate, the semiconductor light emitting layer, and a second resin molded body that molds the wire. 【請求項２】 半導体発光層と、 前記半導体発光層の発光波長に対し透明であり、表面に
前記半導体発光層が形成された基板と、 前記半導体発光層上に形成される少なくとも１の電極
と、 一対のリードと、 前記基板および前記一対のリードの端部が、前記発光波
長に対し透明な樹脂材で表面に接着固定された前記発光
波長に対し透明な基材と、 一方の端部を前記半導体発光層上の前記電極に、他方の
端部を前記一対のリードにそれぞれ接続したボンディン
グワイヤと、 前記リードの一部、前記基板、前記半導体発光層、前記
基材および前記ボンディングワイヤをモールドするとと
もに、前記半導体発光層より前記基板裏面方向に進行す
る出力光と同一な方向に凸な外形を有する樹脂成型体と
を有する発光装置。2. A semiconductor light emitting layer; a substrate transparent to the emission wavelength of the semiconductor light emitting layer, the surface of which is formed with the semiconductor light emitting layer; and at least one electrode formed on the semiconductor light emitting layer. A pair of leads, an end of the substrate and the pair of leads, a base material transparent to the emission wavelength adhered and fixed to a surface with a resin material transparent to the emission wavelength, and one end A bonding wire having the other end connected to the pair of leads on the electrode on the semiconductor light emitting layer, and a part of the lead, the substrate, the semiconductor light emitting layer, the base material, and the bonding wire being molded. And a resin molded body having an outer shape convex in the same direction as the output light traveling from the semiconductor light emitting layer toward the rear surface of the substrate. 【請求項３】 前記半導体発光層が、ｎ型の導電型を有
する窒化ガリウム系半導体層とｐ型の導電型を有する窒
化ガリウム系半導体層の積層であり、 前記基板がサファイアである請求項１または請求項２に
記載の発光装置。3. The semiconductor light emitting layer is a laminate of a gallium nitride based semiconductor layer having an n-type conductivity and a gallium nitride based semiconductor layer having a p-type conductivity, and the substrate is sapphire. Alternatively, the light emitting device according to claim 2. 【請求項４】 前記半導体発光層の外周囲に、前記発光
波長の光を反射する反射鏡を備えることを特徴とする請
求項１から請求項３のいずれか１に記載の発光装置。4. The light-emitting device according to claim 1, further comprising a reflector around the semiconductor light-emitting layer to reflect light of the emission wavelength. 【請求項５】 前記ボンディングワイヤの少なくともい
ずれか１の径が２５μｍより太く、５０μｍ以下である
ことを特徴とする請求項１から請求項４のいずれか１に
記載の発光装置。5. The light emitting device according to claim 1, wherein a diameter of at least one of the bonding wires is larger than 25 μm and equal to or smaller than 50 μm. 【請求項６】 前記半導体発光層上の１の電極と前記一
対のリードの一方とを接続する前記ボンディングワイヤ
の数が複数本であることを特徴とする請求項１から請求
項４のいずれか１に記載の発光装置。6. The semiconductor device according to claim 1, wherein the number of the bonding wires connecting one electrode on the semiconductor light emitting layer and one of the pair of leads is plural. 2. The light emitting device according to 1. 【請求項７】 前記反射鏡が、前記リードと同じ材質で
形成されていることを特徴とする請求項１から請求項６
のいずれか１に記載の発光装置。7. The reflection mirror according to claim 1, wherein the reflection mirror is formed of the same material as the lead.
The light emitting device according to any one of the above.
JP18770396A 1996-07-17 1996-07-17 Light emitting device Expired - Fee Related JP3238326B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18770396A JP3238326B2 (en) 1996-07-17 1996-07-17 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18770396A JP3238326B2 (en) 1996-07-17 1996-07-17 Light emitting device

Publications (2)

Publication Number Publication Date
JPH1032351A JPH1032351A (en) 1998-02-03
JP3238326B2 true JP3238326B2 (en) 2001-12-10

Family

ID=16210691

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3238326B2 (en)

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JP2002124705A (en) * 2000-10-17 2002-04-26 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
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