JP2003008080A - Light emitting or light receiving device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an easy-to-manufacture light emitting or light receiving device in which the utilization efficiency of light is high and adjustment of height is not required. SOLUTION: In a light emitting or light receiving device where a light emitting element 2 or a light receiving element comprising a gallium nitride based compound semiconductor 15 formed on the rear surface of a translucent substrate 3 is mounted on a first lead 16, the translucent substrate 3 is stacked on the window 19 of the first lead 16, at least a part of the first lead 16 touching the translucent substrate 3 is composed of a translucent material and the translucent substrate 3 is die bonded to the rear surface of the first lead 16.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a light emitting or light receiving device.

[0002]

2. Description of the Related Art Conventionally, a light emitting element used in this type of device is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-177135. According to this publication, an insulating substrate 10, a first conductivity type layer 11 laminated thereon, a light emitting region 12, and a second conductivity type layer 13 are formed.

The first electrode 14 and the second electrode 15 are formed on the surfaces of the first conductivity type layer 11 and the second conductivity type layer 13, respectively. A predetermined voltage is applied between the first electrode 14 and the second electrode 15.

[0004]

However, the above device has the first drawback that the luminous efficiency (light utilization efficiency) is low. The present inventor has investigated the cause and found that this device is a junction up type (the light emitting region 12 is located above the insulating substrate 10). That is, most of the light emitted from the light emitting region 12 is incident on the insulating substrate 10. However, since this incident light is downward, it can be seen that the amount of light going outward (that is, upward light) is small. It was

In order to solve this drawback, the present inventor has tried a junction type structure. That is, the light emitting element is turned upside down, the first electrode 14 is fixed on the first submount (not shown), and the second electrode is mounted on the second submount (not shown).
The electrode 15 was fixed. However, in order to keep the light emitting element horizontal, the steps of the first and second submounts are strictly controlled, and the height and the planar position are adjusted even during die bonding of the electrodes and the submounts. Therefore, there is a second drawback that is difficult to manufacture due to the need for a highly accurate assembly technique.

In view of the above-mentioned conventional drawbacks, the present invention has high light utilization efficiency and does not require height adjustment.
Provided is a light emitting or light receiving device that is easy to manufacture.

[0007]

In order to solve the above problems, according to the present invention of claim 1, a light emitting element or a light receiving element made of a gallium nitride-based compound semiconductor formed on the back surface of a transparent substrate is provided as a first lead. In the light-emitting or light-receiving device mounted on, the translucent substrate is overlapped with the window of the first lead, or
At least a portion of the first lead that is in contact with the transparent substrate is made of a transparent material, the transparent substrate is die-bonded to the back surface of the first lead, and the first electrode of the element is the first electrode. The lead or the second lead was wire-bonded, and the second electrode of the device was wire-bonded to the second lead or the first lead.

According to a second aspect of the present invention, the element is provided on the transparent substrate, a first conductivity type layer provided on the back surface of the transparent substrate, and partially provided on the first conductivity type layer. A first electrode, a light emitting or light receiving region partially laminated on the first conductivity type layer, a second conductivity type layer, and a second electrode.

According to the third aspect of the present invention, the second electrode is provided substantially at the center of the compound semiconductor, and the first electrode is provided so as to surround the second electrode.

In the present invention of claim 4, the first electrode is provided substantially in the center of the compound semiconductor, and the second electrode is provided so as to surround the first electrode.

In the present invention of claim 5, the ratio of the area of the first electrode to the area of the first portion of the first conductivity type layer on which the first electrode is provided is 60% to 100%. And

In the present invention of claim 6, the ratio of the area of the second electrode to the area of the second portion of the second conductivity type layer on which the second electrode is provided is 60% to 100%. And

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A light emitting device 1 according to a first embodiment of the present invention will be described below with reference to FIGS. Figure 1
Is a cross-sectional view of the light emitting device 1, and FIG.
FIG. 3 is a rear view of the light emitting element 2 used in FIG.

First, referring to these figures, the light emitting element 2
The manufacturing of will be described. First, the manufacturer prepares the transparent substrate 3. As the light-transmitting substrate 3, for example, a sapphire substrate having a light-transmitting property and an insulating property is used.

The manufacturer stores the transparent substrate 3 in a reaction tube (not shown) and cleans it. Then, the manufacturer sets the growth temperature to 510 ° C., hydrogen as a carrier gas,
Ammonia and trimethylgallium were used as source gases, and the buffer layer 4 made of GaN was formed on the transparent substrate 3.
Grow at a thickness of about 200 Å.

Thereafter, the manufacturer stops only the supply of trimethylgallium and raises the temperature in the reaction tube to 1030 ° C. The manufacturer grows the n-type GaN layer 5 doped with silicon (Si) to a thickness of 4 μm at 1030 ° C. in the reaction tube using trimethylgallium and ammonia gas and silane gas as a dopant gas.

Then, the manufacturer stops the supply of the raw material gas and the dopant gas, sets the temperature in the reaction tube at 800 ° C.,
Trimethylgallium, trimethylaluminum, and ammonia are used as source gases, and silane gas is used as a dopant gas. As a result, the manufacturer grows a silicon-doped n-type Ga _0.86 Al _0.14 N layer as the first cladding layer 6 on the n-type GaN layer 5 to a thickness of 0.15 μm.

Next, the manufacturer stops the supply of the raw material gas and the dopant gas, sets the temperature in the reaction tube to 800 ° C., switches the carrier gas to nitrogen gas, and then, trimethylgallium, trimethylindium, ammonia, and the dopant gas. As, silane gas is used. As a result, the manufacturer grows the light emitting region 7 (n-type In _0.01 Ga _0.99 N layer doped with silicon) on the first cladding layer 6 to a thickness of 100 Å.

Thereafter, the manufacturer stops the supply of the raw material gas and the dopant gas, raises the temperature in the reaction tube to 1020 ° C., trimethylgallium, trimethylaluminum and ammonia as the raw material gas, and cyclopentadienyl as the dopant gas. Use magnesium. As a result, the manufacturer has the second cladding layer 8 on the light emitting region 7.
(P-type Ga _0.86 Al _0.14 N layer) is grown to a thickness of 0.15 μm.

Then, the manufacturer stops the supply of trimethylaluminum and grows the contact layer 9 (p-type GaN layer doped with magnesium) to a thickness of 0.4 μm.

The manufacturer then decides that these layers 4, 5,
The transparent substrate 3 (hereinafter referred to as the semiconductor 11) on which 6, 7, 8, and 9 have been grown is taken out from the reaction tube. Then, the manufacturer stores the semiconductor 11 in the annealing device,
The semiconductor 11 is stored in a nitrogen atmosphere at 700 ° C. for about 20 minutes.
Anneal for minutes. As a result, in the semiconductor 11, the resistance of the second cladding layer 8 and the contact layer 9 is reduced.

After that, as shown in FIG. 2, the manufacturer etches a part of the side surface of the semiconductor 11 to expose a part (first part) 11 of the n-type GaN layer 5.

Then, the manufacturer forms the first electrode 12 made of aluminum or the like on the first portion 11 of the n-type GaN layer 5. The manufacturer forms the second electrode 14 made of gold or the like on the second portion 13 which is the surface of the contact layer 9.

After that, the manufacturer stores the device again in the annealing apparatus and anneals it at 500.degree. As a result, the gallium nitride-based compound semiconductor 15, the first electrode 12, and the second electrode 14 become compatible with each other. Then, the manufacturer cuts into chips (elements) of 500 μm square to obtain the light emitting element 2.

In FIG. 1, the first lead 16 is made of a material having a high electric conductivity such as a copper plate, and is composed of a rising portion 17 and a mounting portion 18. In place of the mounting part 18,
A window (opening) 19 is formed.

The second lead 20 is made of a material having high electric conductivity, such as a copper plate, and has a rising portion 21 and a mounting portion 22. The mounting portion 22 is provided at substantially the same height as the mounting portion 18, and the mounting portion 22 is
They are placed a predetermined distance apart.

The light emitting element 2 is fixed to the first lead 16 in an inverted state of the state described in the above description of manufacture. That is, the transparent substrate 3 of the light emitting element 2 is set to the first
The transparent substrate 3 is arranged so as to overlap the window 19 of the lead 16.
It is fixed (die bonded) to the back surface of the mounting portion 18 provided on the first lead 16 via an adhesive material (not shown) or the like.

Further, at least the portion of the first lead 16 that contacts the transparent substrate 3, that is, the mounting portion 18, may be made of a transparent material.

Thus, in the light emitting device 1, the transparent substrate 3
The light emitting element 2 made of the gallium nitride-based compound semiconductor 15 formed on the back surface of the is mounted on the first lead 16.

As described above, the buffer layer 4 (for example, G having a thickness of 200 Å) is formed on the back surface of the transparent substrate 3.
aN layer) is formed. On the back surface of the buffer layer 4, a downwardly convex n-type GaN layer 5 (for example, made of a silicon-doped n-type GaN layer having a thickness of 4 μm) is formed.

The first electrode 12 is made of aluminum, for example, and is formed on the first portion 11 (flat portion of the convex portion) of the convex n-type GaN layer 5.

The first cladding layer 6 is formed on the bottom surface of the convex portion of the n-type GaN layer 5, and is, for example, a silicon-doped n-type Ga _0.86 Al _0.14 N layer having a thickness of 0.15 μm. The n-type GaN layer 5 and the first cladding layer 6 constitute a first conductivity type layer 23.

The light emitting region 7 is formed on the back surface of the first cladding layer 6 and has, for example, a thickness of 100 angstroms and is composed of an n-type In _0.01 Ga _0.99 N layer doped with silicon.

The second cladding layer 8 is formed on the back surface of the light emitting region 7, has a thickness of, for example, 0.15 μm, and is of p-type Ga doped with cyclopentadienyl magnesium.
_It consists of _0.86 Al _0.14 N layer.

The contact layer 9 is formed on the back surface of the second cladding layer 8 and is, for example, a p-type GaN layer doped with magnesium and having a thickness of 0.4 μm. These second
The clad layer 8 and the contact layer 9 form a second conductivity type layer 24.

The second electrode 14 is made of, for example, a gold layer, and is formed on the back surface of the contact layer 9, that is, the second portion 13 of the second conductivity type layer 24. With these layers, the light emitting element 2
Is configured.

The first characteristics of the light emitting device 2 are summarized below. The light emitting element 2 has a transparent substrate 3. Translucent substrate 3
The first conductivity type layer 23 is provided on the back surface of the. First
The electrode 12 is partially provided on the first conductivity type layer 23. That is, the first electrode 12 is provided on the back surface of the first portion 11 formed in the first conductivity type layer 23.

The light emitting region 7, the second conductivity type layer 24 (consisting of the second cladding layer 8 and the contact layer 9), and the second electrode 14 are partially laminated on the first conductivity type layer 23.
That is, the layers 7, 24, 14 are laminated on the bottom surface of the convex portion forming the first conductivity type layer 23.

Next, the second characteristic of the light emitting element 2 will be summarized below. Looking at this light emitting element 2 from the back side (see FIG. 3),
The second electrode 14 is provided substantially at the center of the compound semiconductor 15 (including the first conductivity type layer 23, the light emitting region 7, the second conductivity type layer 24, etc.) that constitutes the light emitting element 2. Second electrode 14
A first electrode 12 is provided so as to surround the.

The third characteristic of the light emitting element 2 is summarized below. The ratio of the area S2 of the first electrode 12 to the area S1 of the first portion 11 of the first conductivity type layer 23 provided with the first electrode 12 is 60% to 100% (FIG. 3). reference).

The ratio of the area S4 of the second electrode 14 to the area S3 of the second portion 13 of the second conductivity type layer 24 on which the second electrode 14 is provided is 60% to 100%. (See Figure 3).

Referring again to FIG. 1, the thin metal wire (made of gold or the like) 25 is wire-bonded between the first electrode 12 of the light emitting element 2 and the mounting portion 18 of the first lead 16.

The thin metal wire 26 (made of gold or the like) is
Wire bonding is performed between the second electrode 14 of the light emitting element 2 and the mounting portion 22 of the second lead 20.

If necessary, the fine metal wire 25 is wire-bonded between the first electrode 25 and the mounting portion 22 of the second lead 20, and the fine metal wire 26 is connected to the second electrode 14 and the first lead. Wire bonding may be performed between the sixteen mounting portions 18 and the mounting portions 18.

The translucent resin 27 is made of, for example, an epoxy resin, and is provided near the lower end of the first lead 16 and the second lead 2.
It is formed so as to cover the above-mentioned components except for the vicinity of the lower end of 0. The light emitting device 1 is configured by the above components.

Next, the operation of the light emitting device 1 will be described with reference to FIGS. First lead 16 and second lead 2
A predetermined voltage is applied to 0.

First conductivity type layer 23 and second conductivity type layer 24
A predetermined voltage is applied to each of the above, and the light emitting region 7 emits light.

At this time, since the light emitting element 2 is of the junction down type (the light emitting region 7 is located below the transparent substrate 3), most of the light emitted from the light emitting region 7 is
It is incident on the transparent substrate 3.

The incident light is transmitted to the mounting portion 1 of the first lead 16.
The light is emitted toward the outside through the window 19 provided in the window 8, the dome portion of the translucent resin 27.

When the mounting portion 18 of the first lead 16 is made of a translucent material, the light emitted from the transparent substrate 3 passes through the mounting portion 18 and the dome portion, Radiated toward the outside.

In this way, the light emitted from the light emitting region 7 is located above the light emitting region 7, and the light transmitting substrate 3 that allows the light to easily pass therethrough.
Since the light is emitted upward (outward) through the through, the brightness is high and the luminous efficiency (light utilization efficiency) is high.

Further, as described above, the second electrode 14 is provided substantially in the center of the compound semiconductor 15, and the first electrode is formed so as to surround the second electrode.
The electrode 12 is provided. With the above structure, the compound semiconductor 15
From the center to the periphery, the current is uniform and isotropic,
The light is diffused and the luminous efficiency is further increased.

Further, the ratio of the area S2 of the first electrode 12 to the area S1 of the first portion 11 is set to 60 to 100%, and the area S4 of the second electrode 14 to the area S3 of the second portion 13 is set.
Of 60 to 100%.

Thus, the light emitted from the light emitting region 7 and traveling downward is reflected by the second electrode 14. As described above, since the area S4 of the second area 14 is relatively large, the amount of the reflected light is large. The reflected light travels upward, passes through the dome portion of the translucent resin 27, and is emitted outward. As a result, the luminous efficiency is further increased.

Further, as described above, by making the area S2 of the first electrode 12 and the area S4 of the second electrode 14 relatively large, the chip mounter has the first electrode 12 and the second electrode 14.
Can accurately recognize the pattern. As a result, the light emitting element 2
Can be accurately placed at a predetermined position of the placing portion 18 provided on the first lead 16.

Further, the first electrode 12 is wire-bonded to the first lead 16 or the second lead 20, and the second electrode 1
4 is wire-bonded to the second lead 20 or the first lead 16. As a result, the first electrode, the second electrode
It is not necessary to fix the first submount and the second submount having different steps under the electrodes. Therefore, high-precision assembly techniques such as height adjustment of each submount and adjustment of the planar position are not required, which facilitates manufacturing.

Next, the light emitting device 1a according to the second embodiment of the present invention will be described with reference to FIGS. 1 is a sectional view of the light emitting device 1a, FIG. 2a is a sectional view of a light emitting element 2a used in the light emitting device 1a, and FIG. 3 is a rear view of the light emitting element 2a.

In FIG. 1, the first lead 16a is made of a material having a high electric conductivity, such as a copper plate, and has a rising portion 17a.
And a mounting portion 18a. A window (opening) 19a is formed at an appropriate position on the mounting portion 18a.

The second lead 20a is made of a material having high electric conductivity such as a copper plate, and has a rising portion 21a and a mounting portion 22.
and a. The mounting portion 22a is the mounting portion 18a.
The mounting portion 22a is provided at substantially the same height as the mounting portion 22a, and is placed at a predetermined distance from the mounting portion 18a.

The light emitting element 2a is fixed to the first lead 16a in an inverted state. That is, the transparent substrate 3a of the light emitting element 2a is connected to the window 19a of the first lead 16a.
So that the transparent substrate 3a is overlapped with the first lead 16a.
It is fixed (die-bonded) to the back surface of the mounting portion 18a provided on the substrate via an adhesive (not shown) or the like.

At least the portion of the first lead 16a that contacts the transparent substrate 3a, that is, the mounting portion 18a may be made of a transparent material.

Thus, in the light emitting device 1a, the gallium nitride compound semiconductor 1 formed on the back surface of the transparent substrate 3a.
The light emitting element 2a composed of 5a is mounted on the first lead 16a.

The buffer layer 4a is formed on the back surface of the transparent substrate 3a.
(Composed of, for example, a 200 Å thick GaN layer). On the back surface of the buffer layer 4a,
A downwardly concave n-type GaN layer 5 (for example, a thickness of 4 μm,
A n-type GaN layer doped with silicon) is formed.

The first electrode 12a is made of aluminum, for example, and is formed on the first portion 11a (bottom of the recess) of the recessed n-type GaN layer 5a.

The first cladding layer 6a is the n-type GaN layer 5a.
Formed on the back surface of the concave portion of, for example, a thickness of 0.15 μm
And comprises an n-type Ga _0.86 Al _0.14 N layer doped with silicon. The n-type GaN layer 5a and the first cladding layer 6a constitute a first conductivity type layer 23a.

The light emitting region 7a is formed on the back surface of the first cladding layer 6a, and is made of, for example, a silicon-doped n-type In _0.01 Ga _0.99 N layer having a thickness of 100 Å.

The second cladding layer 8a is formed on the back surface of the light emitting region 7a and has a thickness of, for example, 0.15 μm.
P-doped with cyclopentadienyl magnesium
A type Ga _0.86 Al _0.14 N layer.

The contact layer 9a is the second cladding layer 8a.
And a magnesium-doped p-type GaN layer having a thickness of 0.4 μm. By these second clad layer 8a and contact layer 9a,
The second conductivity type layer 24a is configured.

The second electrode 14a is made of, for example, a gold layer and is formed on the back surface of the contact layer 9a, that is, on the second portion 13a of the second conductivity type layer 24a. The light emitting element 2a is constituted by these layers.

The first characteristics of this light emitting element 2a are summarized below. The light emitting element 2a has a transparent substrate 3a. The first conductivity type layer 23a is provided on the back surface of the transparent substrate 3a. The first electrode 12a is partially provided on the first conductivity type layer 23a. That is, the first electrode 12a is provided on the back surface of the first portion 11a formed on the first conductivity type layer 23a.

A light emitting region 7a, a second conductivity type layer 24a (consisting of a second cladding layer 8a and a contact layer 9a),
The second electrode 14a is partially stacked on the first conductivity type layer 23a. That is, the layers 7a, 24a, 14a are laminated on the back surface of the concave portion forming the first conductivity type layer 23a.

Next, the second characteristic of the light emitting element 2a will be summarized below. When this light emitting element 2a is viewed from the back surface (see FIG. 6), the compound semiconductor 15a (the first conductivity type layer 23a, the light emitting region 7a, and the second conductivity type layer 24a that form the light emitting element 2a are shown.
The first electrode 12a is provided substantially at the center of the first electrode 12a. The second electrode 14a is provided so as to surround the first electrode 12a.

The third characteristic of the light emitting element 2 is summarized below. First conductivity type layer 23 provided with the first electrode 12a
For the area S5 of the first portion 11a of a, the first electrode 12
The ratio of the area S6 of a is set to 60% to 100% (see FIG. 6).

The ratio of the area S8 of the second electrode 14a to the area S7 of the second portion 13a of the second conductivity type layer 24a on which the second electrode 14a is provided is 60% to 100%.
% (See FIG. 6).

Referring again to FIG. 4, the thin metal wire (made of gold or the like) 26a is the same as the second electrode 12a of the light emitting element 2a and the second electrode 12a.
Wire bonding is performed between the lead 20a and the mounting portion 22a.

The thin metal wire 25a (made of gold or the like)
Is the second electrode 14a and the first lead 16a of the light emitting element 2a.
Is wire-bonded to the mounting portion 18a.

If necessary, the metal thin wire 26a is wire-bonded between the first electrode 12a and the mounting portion 18a of the first lead 16a, and the metal thin wire 25a is connected to the second electrode 14a and the second lead. Wire bonding may be performed between the mounting portion 22a of 20a.

The translucent resin 27a is made of, for example, an epoxy resin, and covers the above-mentioned components except near the lower end of the first lead 16a and the lower end of the second lead 20a.
Has been formed. With the above components, this light emitting device 1a
Is configured.

Next, the operation of the light emitting device 1a will be described with reference to FIGS. A predetermined voltage is applied to the first lead 16a and the second lead 20a.

First conductivity type layer 23a and second conductivity type layer 2
A predetermined voltage is applied to each of the 4a, and the light emitting region 7a emits light.

At this time, since the light emitting element 2a is a junction down type (the light emitting region 7a is located below the light transmitting substrate 3a), most of the light emitted from the light emitting region 7a is transparent. It is incident on the substrate 3a.

The incident light is emitted to the outside through the window 19a provided in the mounting portion 18a of the first lead 16a, the dome portion of the transparent resin 27a.

When the mounting portion 18a of the first lead 16a is made of a translucent material, the light emitted from the transparent substrate 3a passes through the mounting portion 18a and the dome portion,
Radiated toward the outside.

In this way, the light emitted from the light emitting region 7a is
Since the light is emitted upward (outward) through the transparent substrate 3a which is located above the light emitting region 7a and allows light to easily pass therethrough, the brightness is high and the light emission efficiency (light utilization efficiency) is high.

Further, as described above, the first electrode 12a is provided substantially at the center of the compound semiconductor 15a, and the first electrode 12a is surrounded so as to surround the first electrode.
The second electrode 14a is provided. With the above configuration, the current is uniformly and isotropically diffused from the periphery of the compound semiconductor 15a to substantially the center, and the light emission efficiency is further increased.

Further, with respect to the area S5 of the first portion 11a,
The ratio of the area S6 of the first electrode 12a is set to 60 to 100%, and the area S7 of the second portion 13a is set to the second electrode 14a.
The ratio of the area S8 is 60 to 100%.

In this way, the light emitted from the light emitting region 7a and traveling downward is reflected by the second electrode 14a. As described above, since the area S8 of the second area 14a is relatively large, the amount of reflected light is large. The reflected light travels upward, passes through the dome portion of the transparent resin 27a, and is radiated outward. As a result, the luminous efficiency is further increased.

Further, as described above, by making the area S6 of the first electrode 12a and the area S8 of the second electrode 14a relatively large, the chip mounter can accurately form the pattern of the first electrode 12a and the second electrode 14a. Can be recognized by. As a result, the light emitting element 2a is mounted on the mounting portion 1 provided on the first lead 16a.
It can be accurately placed at a predetermined position of 8a.

Further, the first electrode 12a is the first lead 16a.
Alternatively, wire bonding to the second lead 20a
The electrode 14a is wire-bonded to the second lead 20a or the first lead 16a. As a result, unlike the conventional case, it is not necessary to fix the first submount and the second submount having different steps under the first electrode and the second electrode. Therefore, high-precision assembly techniques such as height adjustment of each submount and adjustment of the planar position are not required, which facilitates manufacturing.

In the above description, the light emitting devices 1 and 1a respectively using the light emitting elements 2 and 2a having a light emitting function have been described. However, even if the same gallium nitride-based compound semiconductor functions as a light receiving element, a light receiving device can be manufactured. What has been described so far as the working effects of the light receiving devices 1 and 1a according to the present invention is also the working effects of the light receiving device.

[0091]

According to the present invention of claim 1, there is provided a light-emitting or light-receiving device in which a light-emitting element or light-receiving element made of a gallium nitride-based compound semiconductor formed on the back surface of a light-transmitting substrate is mounted on a first lead. A transparent substrate is placed on the window of the first lead, or at least a portion of the first lead that is in contact with the transparent substrate is made of a transparent material, and the transparent substrate is the back surface of the first lead. Die bonding, the first electrode of the element is wire-bonded to the first lead or the second lead, and the second electrode of the element is wire-bonded to the second lead or the first lead. As described above, since the light emitting element is of the junction type (the light emitting region is located below the light transmitting substrate), most of the light emitted from the light emitting region is incident on the light transmitting substrate. This incident light is emitted toward the outside through the window of the first lead or the light-transmitting first lead. As a result, the luminous efficiency (light utilization efficiency) increases. Further, since the first electrode and the second electrode are wire-bonded to the first lead and the second lead, the first submount having a different step,
There is no need to provide a second submount. As a result, high-precision assembly techniques such as height adjustment of each submount and adjustment of the planar position are not required, which facilitates manufacturing.

In the present invention of claim 2, the element is provided on the transparent substrate, the first conductivity type layer provided on the back surface of the transparent substrate, and partially provided on the first conductivity type layer. The first electrode, the light emitting or light receiving region partially stacked on the first conductivity type layer, the second conductivity type layer, and the second electrode.
Thus, the first electrode is provided on the first conductivity type layer provided on the back surface of the transparent substrate, and the back surface of the first conductivity type layer emits light (receives light).
By stacking the region, the second conductivity type layer and the second electrode,
The light emitting region or the light receiving region can be located below the transparent substrate. As a result, a light emitting element or a light receiving element having a junction down structure can be easily obtained.

According to the third aspect of the present invention, the second electrode is provided substantially in the center of the compound semiconductor, and the first electrode is provided so as to surround the second electrode. With the above configuration, the current is evenly distributed from the approximate center to the periphery of the compound semiconductor,
Moreover, since the light is diffused with good isotropy, the luminous efficiency (light utilization efficiency) is increased.

According to a fourth aspect of the present invention, the first electrode is provided substantially in the center of the compound semiconductor, and the second electrode is provided so as to surround the first electrode. With the above structure, the current is evenly distributed from the periphery of the compound semiconductor to the center thereof.
Moreover, since the light is diffused with good isotropy, the luminous efficiency (light utilization efficiency) is increased.

According to a fifth aspect of the present invention, the ratio of the area of the first electrode to the area of the first portion of the first conductivity type layer on which the first electrode is provided is 60% to 100%. And As described above, by increasing the area of the first electrode, the light traveling downward is reflected by the first electrode, is emitted upward, and is emitted to the outside, so that the luminous efficiency or the light utilization efficiency is increased. In addition, with respect to the area of the first portion,
By increasing the area ratio of the electrodes to 60 to 100%, the chip mounter can accurately recognize the pattern of the first electrodes. As a result, the light emitting element or the light receiving element can be accurately mounted at a predetermined position of the mounting portion provided on the first lead.

In the present invention of claim 6, the area ratio of the second electrode is 60% to 100% with respect to the area of the second portion of the second conductivity type layer on which the second electrode is provided. And In this way, by increasing the area of the second electrode, the light emitted from the light emitting region is reflected by the second electrode, is directed upward, and is radiated outward, so that the light emission efficiency or the light utilization efficiency is increased. . Further, by increasing the area ratio of the second electrode to the area of the second portion at 60 to 100%, the chip mounter can accurately recognize the pattern of the second electrode. As a result, the light emitting element or the light receiving element can be accurately mounted at a predetermined position of the mounting portion provided on the first lead.

[Brief description of drawings]

FIG. 1 is a sectional view of a light emitting device 1 according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a light emitting element 2 used in the light emitting device 1.

FIG. 3 is a rear view of the light emitting element 2.

FIG. 4 is a sectional view of a light emitting device 1a according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view of a light emitting element 2a used in the light emitting device 1a.

FIG. 6 is a rear view of the light emitting element 2a.

[Explanation of symbols]

2 light emitting element 3 Transparent substrate 12 First electrode 14 Second electrode 15 Compound semiconductor 16 First Lead 20 Second Lead

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Claims (6)

[Claims] 1. A light emitting element or a light receiving element made of a gallium nitride-based compound semiconductor formed on the back surface of a light transmissive substrate.
In a light emitting or light receiving device mounted on a lead, the translucent substrate is overlapped with a window of the first lead, or at least a portion of the first lead in contact with the translucent substrate is made of a translucent material. Then, the transparent substrate is die-bonded to the back surface of the first lead, the first electrode of the element is wire-bonded to the first lead or the second lead, and the second electrode of the element is the second lead or the second electrode. A light-emitting or light-receiving device characterized by being wire-bonded to a first lead. 2. The element comprises the transparent substrate, a first conductivity type layer provided on the back surface of the transparent substrate, and a first electrode partially provided on the first conductivity type layer. 2. The light emitting or receiving device according to claim 1, further comprising a light emitting or receiving region partially laminated on the first conductive type layer, a second conductive type layer and a second electrode. 3. The light emitting or receiving device according to claim 2, wherein the second electrode is provided substantially at the center of the compound semiconductor, and the first electrode is provided so as to surround the second electrode. 4. The light emitting or receiving device according to claim 2, wherein the first electrode is provided substantially in the center of the compound semiconductor, and the second electrode is provided so as to surround the first electrode. 5. The ratio of the area of the first electrode to the area of the first portion of the first conductivity type layer on which the first electrode is provided is 60% to 100%. The light-emitting or light-receiving device according to claim 3 or claim 4. 6. The ratio of the area of the second electrode to the area of the second portion of the second conductivity type layer on which the second electrode is provided is 60% to 100%. The light-emitting or light-receiving device according to claim 3 or claim 4.