KR101772550B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101772550B1
KR101772550B1 KR1020150175827A KR20150175827A KR101772550B1 KR 101772550 B1 KR101772550 B1 KR 101772550B1 KR 1020150175827 A KR1020150175827 A KR 1020150175827A KR 20150175827 A KR20150175827 A KR 20150175827A KR 101772550 B1 KR101772550 B1 KR 101772550B1
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KR
South Korea
Prior art keywords
light emitting
emitting device
semiconductor light
encapsulant
frame
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KR1020150175827A
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Korean (ko)
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KR20170069331A (en
Inventor
박은현
전수근
김경민
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주식회사 세미콘라이트
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Priority to KR1020150175827A priority Critical patent/KR101772550B1/en
Publication of KR20170069331A publication Critical patent/KR20170069331A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of electrodes; A sealing material covering the semiconductor light emitting device chip; And an encapsulation material covering the encapsulation material and reflecting light, and a method of manufacturing the same.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device with improved lateral light emitting efficiency.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the growth substrate 10 side is electrically connected to the outside, it becomes a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. The semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a base 130, and a vertical type light emitting chip 150 in the cavity 140, Is filled with an encapsulant 170 containing the wavelength conversion material 160. The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have.

4 is a view of the semiconductor light emitting device disclosed in U.S. Patent No. 6,679,621. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device 200 includes a semiconductor light emitting device chip 210, a base 220, a sealing material 230, and a lens 240. The light 250 emitted from the semiconductor light emitting device chip 210 is emitted to the side of the semiconductor light emitting device 200 by the lens 240.

5 is a view of a semiconductor light emitting device disclosed in Korean Patent Laid-Open No. 10-2007-0098180. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device 300 includes a semiconductor light emitting device chip 310, a base 320, and a sealing material 330. The lead terminals 321 and 322 are positioned on the side of the base 320 so that the semiconductor light emitting device 300 can emit light on the side.

However, the semiconductor light emitting devices 100, 200, and 300 according to FIGS. 3 to 5 are complicated in structure and have a limitation in reducing the size of the semiconductor light emitting device due to the bases 130, 220, and 320. 4, a lens 240 is added. In FIG. 5, a side surface of the base 320 is a mounting surface electrically connected to an external substrate (e.g., a PCB, a submount, etc.) There is a problem that the thickness of the semiconductor light emitting device increases when mounted.

The present disclosure provides a side-emitting semiconductor light-emitting device which is simple in structure and significantly reduced in size.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of electrodes; A sealing material covering the semiconductor light emitting device chip; And an encapsulation material covering the encapsulation material and reflecting the light.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising the steps of: (S1) preparing a frame having a cavity, the frame including a frame (S1); (S2) covering a part of the cavity of the frame with an encapsulating material; A method of manufacturing a semiconductor light emitting device, comprising: positioning a semiconductor light emitting device chip including a plurality of electrodes on an encapsulant, the method comprising: (S3) positioning a semiconductor light emitting device chip so that a plurality of electrodes are located on opposite sides of the encapsulant; Covering the rest of the cavity of the semiconductor light emitting device chip and the frame with an encapsulant; (S4) covering the plurality of electrodes with the encapsulant so as to expose the encapsulant; And removing the remaining frame by leaving a frame under the sealing material (S5) by cutting along a cutting line (S5).

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view of the semiconductor light emitting device disclosed in U.S. Patent No. 6,679,621,
5 is a view of a semiconductor light emitting device disclosed in Korean Patent Laid-Open No. 10-2007-0098180,
6 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
11 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
12 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
13 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
14 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
15 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

6 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

Fig. 6 (a) is a perspective view, Fig. 6 (b) is a sectional view along AA ', and Fig. 6 (c) is a bottom view.

The semiconductor light emitting device 400 includes a semiconductor light emitting device chip 410, a sealing material 420, and an encapsulating material cover 430. The semiconductor light emitting device chip 410 includes a plurality of electrodes 411 and 412. The semiconductor light emitting device chip 410 may be one of a vertical chip, a lateral chip, and a flip chip. However, a flip chip is preferable because the electrode of the semiconductor light emitting device chip is electrically connected directly to the external substrate. The encapsulant 420 covers the semiconductor light emitting device chip 410. The encapsulant 420 is made of a light-transmitting material. For example, an epoxy resin or a silicone resin. The encapsulant 420 may include a wavelength converting material (not shown). Preferably, the wavelength conversion material 421 may be positioned between the semiconductor light emitting device chip 410 and the sealing material 420 in order to save the expensive wavelength conversion material as shown in FIG. The encapsulant 420 covers the semiconductor light emitting device chip 410 so that the plurality of electrodes 411 and 412 of the semiconductor light emitting device chip 410 are exposed from the encapsulant 420 so as to be electrically connected to the external substrate. The encapsulant lid 430 is positioned over the encapsulant 420. The encapsulant lid 430 is made of a material that is non-transmissive and reflects light. For example, white reflective resin (e.g., EMC, PPA, LCP, etc.), white reflective silicon, and reflective metal (e.g., Ag, Al, etc.). The encapsulation material cover 430 covers the entire upper surface 421 of the encapsulant 420 so that the light 440 emitted from the semiconductor light emitting device chip 410 does not protrude to the upper side of the semiconductor light emitting device 400, A path of light emitted from the semiconductor light emitting device chip 410 is exemplarily shown by a solid line 440. The light 440 emitted from the semiconductor light emitting device chip 410 can only reach the side surface of the semiconductor light emitting device 400 due to the encapsulant lid 430.

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The height 532 of the bottom surface 531 of the encapsulant lid 530 is not constant in the semiconductor light emitting device 500. The height 532 may be based on the lower surface 521 of the sealing material 520. The height 532 of the lower surface 531 of the encapsulation material cover 530 decreases from one end 533 of the encapsulation material cover 530 toward the middle 534 and decreases from the middle 534 toward the other end 535 It grows. It is preferable that the height 532 of the bottom surface 531 of the sealing material cover 530 in the middle 534 is the smallest. For example, when the center of the semiconductor light emitting device chip 510 is positioned below the center 534 of the encapsulant lid 530, the light 540 is reflected by the inclined bottom surface 531 of the encapsulant lid 530 So that the semiconductor light emitting device 500 can be smoothly moved to the side of the semiconductor light emitting device 500. Particularly, the center 534 of the encapsulation material cover 530 is preferably as close to the semiconductor light emitting device chip 510 as possible. The shape of the upper surface 521 of the encapsulant 520 depends on the shape of the encapsulant lid 530 and the lower surface 531. A path of light emitted from the semiconductor light emitting device chip 510 is exemplarily shown by a solid line 540. Except as described in FIG. 7, the semiconductor light emitting device 500 is substantially the same as the semiconductor light emitting device 400 described in FIG.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a reflective wall 640 on a side surface of the semiconductor light emitting device chip 610. An encapsulant 620 covers the reflective wall 640. The reflective wall 640 may be made of a white reflective resin. For example, a white silicone resin can be used. The wavelength conversion material 621 may be positioned between the reflective wall 640 and the semiconductor light emitting device chip 610. [ If the wavelength converting material 621 is contained in the sealing material 620 as shown in FIG. 8 (b), the reflecting wall 640 is located in contact with the side surface of the semiconductor light emitting device chip 610. The height 641 of the reflective wall 640 can also be adjusted. 8 (a) and 8 (b), the reflective wall 640 may surround the entire side surface of the semiconductor light emitting device chip 610 from which the light is emitted as shown in FIG. 8 (a) The height 641 of the reflective wall 640 can be adjusted so that only a part of the side surface of the light emitting device chip 610 is exposed. A path of light emitted from the semiconductor light emitting device chip 610 is illustrated by a solid line 650 as an example. Except as described in FIG. 8, the semiconductor light emitting device 600 is substantially the same as the semiconductor light emitting device 500 described in FIG.

9 is a view showing another example of the semiconductor light emitting device according to the present disclosure. 9 (a) is a perspective view, FIG. 9 (b) is a sectional view taken along line AA ', and FIG. 9 (c) is a bottom view.

The semiconductor light emitting device 700 includes an encapsulant lid 730 covering the encapsulant 720. The encapsulant lid 730 covers the sides of the encapsulant 720 as well as the encapsulant lids 430, 530 and 630 described in Figures 6 to 8 are located just above the encapsulants 420, 520 and 620 . The encapsulation material cover 730 may be formed of a sealing material such that a part of the side surface 721 of the encapsulation material 720 is exposed so that the light 740 emitted from the semiconductor light emitting device chip 710 may be discharged from the semiconductor light emitting device 700. [ 720). The light 740 exits only to the side surface 721 of the exposed encapsulant 720. Illustratively, the path of light emitted from the semiconductor light emitting device chip 710 is indicated by a solid line 740. Except as described in FIG. 9, the semiconductor light emitting device 700 is substantially the same as the semiconductor light emitting device 400 described in FIG.

10 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The height 832 of the lower surface 831 of the encapsulant lid 830 is not constant. The height 832 of the lower surface 831 of the encapsulation material cover 830 becomes smaller toward the opposite direction 822 in the direction of the side surface 821 of the exposed encapsulant 820 to form an inclined surface. The light 840 emitted from the semiconductor light emitting device chip 810 is better extracted into the side surface 821 of the encapsulant 820 exposed due to the inclined surface. Illustratively, a path of light emitted from the semiconductor light emitting device chip 710 is indicated by a solid line 840. Except as described in FIG. 10, the semiconductor light emitting device 800 is substantially the same as the semiconductor light emitting device 700 described in FIG.

11 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 900 includes a reflective wall 940 on the side of the semiconductor light emitting device chip 910. The reflecting wall 940 is substantially the same as the reflecting wall 640 described in Fig. For example, the height of the reflecting wall 940 can be adjusted as shown in FIG. A path of light emitted from the semiconductor light emitting device chip 910 is illustrated by a solid line 950. [ 11, the semiconductor light emitting device 900 is substantially the same as the semiconductor light emitting device 800 described in FIG.

12 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

A frame 1000 including the cavity 1100 is prepared (S1). The frame 1000 is made of a material that reflects light. For example, white reflective resin (e.g., EMC, PPA, LCP, etc.), white reflective silicon, and reflective metal. The height 1111 of the lower surface 1110 of the cavity 1100 may be constant but increases as one goes from one end 1112 to the middle 1113 as shown in FIG. 1114). Thereafter, the cavity 1100 is partially covered with the encapsulant 1200 (S2). It is preferable that the sealing material 1200 is covered up to the center 1113. The shape of the encapsulant 1200 is formed according to the shape of the lower surface 1110 of the cavity 1100. Then, the semiconductor light emitting device chip 1300 including the plurality of electrodes 1310 and 1311 is placed on the encapsulant 1200 (S3). In order to temporarily fix the semiconductor light emitting device chip 1300 on the sealing material 1200, the sealing material 1200 is preferably semi-cured. The semiconductor light emitting device chip 1300 may not enter the semi-cured encapsulant 1200 because the height 1111 of the bottom 1110 of the cavity 1100 is the highest. Further, a plurality of electrodes 1310 and 1311 of the semiconductor light emitting device chip 1300 are positioned on the opposite side of the sealing material 1200. That is, the plurality of electrodes 1310 and 1311 are directed upward. Further, when the encapsulant 1200 does not include a wavelength converting material, the semiconductor light emitting device chip 1300 in which the wavelength converting material 1320 is enclosed may be used. A method of manufacturing the semiconductor light-emitting device chip 1300 surrounded by the wavelength conversion material 1320 is a known technique. For example, in Korean Patent Registration No. 10-1364247. Or when the wavelength converting material is not required, only the semiconductor light emitting device chip may be used. Alternatively, a step S2-1 of applying the wavelength conversion material on the encapsulant 1200 may be added between steps S2 and S3 (not shown). Thereafter, the remainder of the cavity 1100 is covered with the sealing material 1200 to cover the semiconductor light emitting device chip 1300 (S4). The cavity 1100 and the semiconductor light emitting device chip 1300 are covered so that the plurality of electrodes 1310 and 1311 of the semiconductor light emitting device chip 1300 are exposed from the sealing material 1200. Thereafter, cutting is performed along the cut line 1400 to leave the frame 1000 below the encapsulant 1200, and the remaining frame 1000 is removed (S5). 6 shows a semiconductor light emitting device fabricated from a frame 1000 having a constant height 1111 of a lower surface 1110 of a cavity 1100 which is not shown in the drawing. The height 1111 of the lower surface 1110 of the cavity 1100 7 is shown in Fig. 7, in which the frame 1000 shown in Fig. 12 is changed.

13 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

In step S4 of FIG. 12, the sealing material 1200 may be covered with a material that reflects light, for example, a white reflective resin 1500 as shown in FIG. In the case of manufacturing as shown in FIG. 13, the semiconductor light emitting device 600 including the reflecting wall described in FIG. 8 is obtained.

14 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

FIG. 14 shows a method of manufacturing the semiconductor light emitting devices 700, 800, and 900 described in FIGS. Steps S1 and S4 described in Fig. 12 are substantially the same. However, the position of the cutting line 1400 is different in step S5. That is, cut along the cutting line 1400, and the frame 1000 is removed so that only a part of the side surface of the sealing material 1200 is exposed. The frame 1000 is preferably removed such that the side surface of the encapsulant 1200 is exposed in a direction in which the height 1111 of the lower surface 1110 of the cavity 1100 of the frame 1000 is the smallest.

15 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

12 to 14 show only the frame 1000 having one cavity 1100, the frame 1000 including two or more cavities 1100 shown in Figs. 15 (a) to 15 (b) It is also possible to use the frame 1000 in which the same bottom shape of the cavity 1100 is repeated in one cavity 1100 as shown in FIG. 15 (c). Steps S2 through S5 for positioning the semiconductor light emitting device chip 1300 with respect to each of the cavities 1100 are substantially the same as the manufacturing method described with reference to FIGS. 12 through 14, in which there are a plurality of cavities 1100.

 Various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of electrodes; A sealing material covering the semiconductor light emitting device chip; And an encapsulation material covering the encapsulation material and reflecting the light.

(2) A semiconductor light emitting device wherein a plurality of electrodes of the semiconductor light emitting device chip are exposed from an encapsulating material.

(3) The encapsulation material lid covers the entire upper surface of the encapsulation material.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the bottom surface of the encapsulation material is not constant.

(5) The semiconductor light emitting device according to any one of the above (1) to (5), wherein the bottom surface of the encapsulation member is smaller in height from the one end of the encapsulation member to the center, and becomes larger toward the other end from the center.

(6) The semiconductor light emitting device according to (6), wherein the bottom surface of the encapsulation member is the smallest in the middle.

(7) A semiconductor light emitting device, wherein a wavelength conversion element is disposed between the encapsulant and the semiconductor light emitting element chip.

(8) A semiconductor light emitting device comprising a reflective wall positioned on a side surface of a semiconductor light emitting device chip.

(9) The semiconductor light emitting device according to any one of (1) to (9), wherein the reflecting wall is a white reflecting resin.

(10) A method of manufacturing a semiconductor light emitting device, comprising: (S1) preparing a frame having a cavity, the frame comprising: (S1) preparing a frame made of a material reflecting light; (S2) covering a part of the cavity of the frame with an encapsulating material; A method of manufacturing a semiconductor light emitting device, comprising: positioning a semiconductor light emitting device chip including a plurality of electrodes on an encapsulant, the method comprising: (S3) positioning a semiconductor light emitting device chip so that a plurality of electrodes are located on opposite sides of the encapsulant; Covering the rest of the cavity of the semiconductor light emitting device chip and the frame with an encapsulant; (S4) covering the plurality of electrodes with the encapsulant so as to expose the encapsulant; And removing the remaining frame by leaving a frame under the sealing material (S5) by cutting along a cutting line (S5).

(11) A method for manufacturing a semiconductor light-emitting device, comprising the steps of:

(12) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, wherein a height of a bottom surface of the frame cavity increases from one end of the frame toward the center and decreases from the center toward the other end.

(13) In the step (S3), the semiconductor light emitting device chip is positioned on the sealing material such that the center of the semiconductor light emitting device chip and the center of the frame are aligned with each other.

(14) A step (S2-1) of applying a wavelength converting material on the sealing material between steps S2 and S3.

(15) In the step (S3), the semiconductor light emitting device chip is placed on the semi-cured encapsulant.

According to the present disclosure, a semiconductor light emitting device having a simple structure and high side light emission efficiency can be obtained.

Semiconductor light emitting devices: 100, 200, 300, 400, 500, 600, 700, 800, 900
Semiconductor light emitting device chip: 150, 1300

Claims (15)

delete delete delete delete delete delete delete delete delete A method of manufacturing a semiconductor light emitting device,
(S1) of preparing a frame having a cavity, wherein the frame comprises a step (S1) of preparing a frame made of a substance reflecting light;
(S2) covering a part of the cavity of the frame with an encapsulating material;
A method of manufacturing a semiconductor light emitting device, comprising: positioning a semiconductor light emitting device chip including a plurality of electrodes on an encapsulant, the method comprising: (S3) positioning a semiconductor light emitting device chip so that a plurality of electrodes are located on opposite sides of the encapsulant;
Covering the rest of the cavity of the semiconductor light emitting device chip and the frame with an encapsulant; (S4) covering the plurality of electrodes with the encapsulant so as to expose the encapsulant; And,
(S5) of cutting off the remaining frame by leaving a frame under the sealing material by cutting along a cutting line (S5). The method of claim 10,
Wherein the sealing material is covered with a white reflective material in step S4. The method of claim 10,
Wherein a height of a lower surface of the frame cavity increases from one end of the frame toward the center and decreases from the center toward the other end. The method of claim 12,
Wherein the semiconductor light emitting device chip is positioned on the sealing material so that the center of the semiconductor light emitting device chip and the center of the frame are aligned in step S3. The method of claim 10,
And a step (S2-1) of applying a wavelength conversion material on the sealing material between steps S2 and S3. The method of claim 10,
And the semiconductor light emitting device chip is placed on the semi-cured encapsulant in step S3.
KR1020150175827A 2015-12-10 2015-12-10 Semiconductor light emitting device KR101772550B1 (en)

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JP2013115088A (en) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd Semiconductor light-emitting device
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JP2013115088A (en) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd Semiconductor light-emitting device
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