JP4822482B2 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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JP4822482B2
JP4822482B2 JP2001154687A JP2001154687A JP4822482B2 JP 4822482 B2 JP4822482 B2 JP 4822482B2 JP 2001154687 A JP2001154687 A JP 2001154687A JP 2001154687 A JP2001154687 A JP 2001154687A JP 4822482 B2 JP4822482 B2 JP 4822482B2
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light emitting
led element
substrate
groove
resin
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JP2002353507A (en
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誠 長山
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は発光ダイオードの構成および製造方法に関する。更に詳しくはＬＥＤ素子からの本来の発光色を蛍光体を用いて変換する作用を有する、例えば白色の発光色が得られる発光ダイオードの構成および製造方法に関するものである。
【０００２】
【従来の技術】
ＬＥＤは発光体の主要部品として広く用いられている。そしてＬＥＤの発する光を蛍光体に入射させて発光体としての発光色を変換する技術もよく知られ、例えば青色のＬＥＤと蛍光体を用いて白色の発光色を得る発光ダイオードがある。
【０００３】
この種の発光ダイオードでは発光するＬＥＤ素子とその光の波長を変換する蛍光体とをどのように配置するかが課題となる。従来提案された構造は、蛍光体でＬＥＤ素子の周囲を覆ったり、あるいは蛍光体を混ぜたダイボンド剤でＬＥＤ素子を基台に固定したり、あるいは蛍光体を混ぜた封止樹脂でＬＥＤ素子を封入するものであった。
【０００４】
【発明が解決しようとする課題】
上述の従来技術においては、樹脂層の形状や厚さ（即ち光変換に関与する蛍光体の総量）を一定に保つことが困難で、樹脂層の形状を一定にしようとすれば注型などを要し、工程を増し製造コストが増える。またキュアー条件の変動によって封止樹脂等の内部での蛍光体の分布にバラツキが発生し易い。これらの理由により、例えば発光ダイオードからスペクトルの強度分布が安定した白色光を発生させることが、発光方向による偏りも含めて困難であった。
【０００５】
本発明の目的は、発光色を変換する蛍光体入りの樹脂の総量を安定化させると共にＬＥＤ素子と一体化させ、しかもそのための過大な工数アップを不要とするような発光ダイオードの構造および製造方法を提供することにある。なお以下の説明において、電源を供給すれば直ちに所定の変換色を発光するデバイスを発光ダイオードとし、その内部に用いられる発光する半導体素子をＬＥＤ素子と称することにする。
【０００６】
【課題を解決するための手段】
上記目的を達成するため本発明のＬＥＤ素子は次の特徴を有する。
（１）サファイア基板の一方の面に発光層であるＰＮジャンクションとそれらの電極を形成し、前記基板に前記発光層のない側の面から前記発光層に達しない深さに縦横に加工した格子状の溝を形成し、該溝の内部にのみ蛍光体を含有した樹脂を充填し、該樹脂を硬化して成ること。
上記目的を達成するため本発明の発光ダイオードは次の特徴のいずれかを有する。
（２）前記（１）に記載のＬＥＤ素子を使用し、前記電極を基板上の導体パターンと導電接着剤あるいはハンダにより接続実装し、封止樹脂にて封止したこと。
【０００７】
（３）前記（１）に記載のＬＥＤ素子を使用し、前記電極をリードフレームの上端に導電接着剤あるいはハンダにより接続実装し、透明な封止樹脂をドーム付き円筒形に成形して封止したこと。
【０００８】
（４）サファイア基板の一方の面に発光層であるＰＮジャンクションとそれらの電極を形成し、前記基板に前記発光層のない側の面から前記発光層に達しない深さに縦横に加工した格子状の溝を形成したＬＥＤ素子を使用し、
蛍光体を含有した樹脂をダイボンド剤として、前記ＬＥＤ素子を前記溝を下向きにして基板の表面にダイボンドし、前記ダイボンド剤は前記溝を充填すると共に前記ＬＥＤ素子を基板に固定し、前記電極と前記基板上の導体パターンをワイヤボンディングで接続し、更に透明な封止樹脂で封止したこと。
【０００９】
また、上記目的を達成するため本発明の発光ダイオードの製造方法は次の特徴のいずれかを備える。
（５）ＬＥＤ素子のサファイア基板に発光層のない側からダイサーを用いあるいはエッチングによって前記発光層に達しない深さに縦横に格子状の溝を加工する工程と、前記加工した溝の内部に蛍光体を含有した樹脂を充填して更に硬化させる工程と、前記ＬＥＤ素子の支持体を兼ねた電極端子と前記ＬＥＤ素子に備えた電極とを接続しかつ固定する工程と、前記ＬＥＤ素子を樹脂で封止する工程とを含むこと。
【００１０】
（６）ＬＥＤ素子のサファイア基板に発光層のない側からダイサーを用いあるいはエッチングによって前記発光層に達しない深さに縦横に格子状の溝を加工する工程と、蛍光体を含有したダイボンド剤を前記溝の内部に充填すると共に前記溝のある側の面に塗布する工程と、前記ＬＥＤ素子を基板にダイボンドする工程と、前記基板上の電極端子と前記ＬＥＤ素子に備えた電極とを接続する工程と、前記ＬＥＤ素子を樹脂で封止する工程とを含むこと。
【００１１】
【発明の実施の形態】
図１は本発明のＬＥＤ素子の実施の形態の一例の上面斜視図であり、（ａ）は蛍光体入り樹脂を充填しない状態を示し、（ｂ）は蛍光体入り樹脂を充填した状態を示す。また図２はそのＬＥＤ素子の下面側の斜視図である。
【００１２】
図１（ａ）において、１はＬＥＤ素子であり、ウエハーから切り出した直方体の半導体素子である。本素子はサファイア等の基板１ａ上に窒化ガリウム等の半導体材料の薄膜をエピタキシャル成長させたもので、半導体層はＰ層１ｂ、Ｎ層１ｄ、その境界にＰＮジャンクション１ｃの層を有する。各半導体層は極めて薄く数μｍ（マイクロメートル）程度であり、ＬＥＤ素子の厚さはほとんどがサファイア基板１ａの厚さが占める。サファイア基板１ａには発光層であるＰＮジャンクション１ｃのない方の面から半導体層に達しない深さに縦横の溝１ｅが掘られている。図１（ｂ）においては、その溝１ｅ内に蛍光体を含有（混入、混練）した蛍光体入り樹脂２（樹脂は透明である）を充填した状態が示されている。
【００１３】
この溝１ｅは例えばウエハー状態のサファイア基板１ａにエッチング加工によって形成することもできるし、またダイサーによって浅い溝を切削して形成してもよい。そして浅い溝の何本目か毎に深い溝を設けるようにすれば、溝１ｅの形成とウエハーからのＬＥＤ素子１の個々の切断分離とを同じダイサーへのウエハーの一回のセットで行うこともできる。
【００１４】
発光層であるＰＮジャンクション１ｃでは、その内部の無数の点から光子が発生しあらゆる方向に向かう。溝は縦横に細かく刻まれているので、光の大部分は直接に、あるいはＬＥＤ１の下面側に設けたＰ層電極１ｆおよびＮ層電極１ｇ（図２）の裏面あるいはＬＥＤ素子１を実装した基台の表面（図示せず）等から反射してから近傍の溝内の蛍光体入り樹脂２の内部に入射し、蛍光体微粒子によって波長を変換された光が樹脂層から射出する。また溝の底部から溝上方に発する光は全て蛍光体層を通過する。なお光の一部には蛍光体層に入射せずに上面から逃げるものもあるが、全体の幾何学的形状が一定しているので変換される光と変換されない光との相互の比率は高度に一定化するので、結果的に変換される発光色を安定させることができる。
【００１５】
図３は上述のＬＥＤ素子１を内蔵した本発明の発光ダイオードの第１の実施の形態を示す断面図である。本例では溝１ｅ内に充填する樹脂として蛍光体入りダイボンド剤６を用い、ＬＥＤ素子１を下向きにして基板５の表面にダイボンドした。ダイボンド剤６はＬＥＤ素子１の溝１ｂのある側にあらかじめ塗布してもよく、また基板５の表面にあらかじめ塗布してからＬＥＤ素子１をその上に伏せて押しつけてもよい。そしてダイボンド剤６を硬化させてからＰ層電極１ｆとＮ層電極１ｇを基板５上の導体パターン５ａにボンディングワイヤ３でワイヤボンディングし、更に透明な封止樹脂４でデバイスを封入した構造である。
【００１６】
本例における主な変換光はＰＮジャンクション１ｃから下向きに出る光で、溝内あるいは基板５の面上に広がった蛍光体入りダイボンド剤６の層を通過し、基板５の上面で反射され上方に向かう光となる。なお図２においてはＰ層電極１ｆとＮ層電極１ｇの段差（Ｎ層の厚さに相当する）が誇張して描いてあるが、これは前述の通り数μｍ程度に過ぎないので、ＬＥＤ素子の実装工程においてはこの段差を無視することができる。
【００１７】
図４は本発明の発光ダイオードの第２の実施の形態を示す断面図である。本例ではＬＥＤ素子１を図１と同様の向きとし、まず溝１ｅ内の蛍光体入り樹脂２を硬化させた後、下面側のＰ層電極１ｆとＮ層電極１ｇを基板５上の２か所の導体パターン５ａとを導電接着剤７（あるいはハンダ）により接続実装し、封止樹脂４にて封止した構造である。主な変換光はＰＮジャンクション１ｃから上方に発する光と下に向かい基板面等で反射した光で蛍光体入り樹脂２を通過した光である。
【００１８】
図５は本発明の発光ダイオードの第３の実施の形態を示す断面図である。本例ではＬＥＤ素子１をリードフレーム８の上端に上述の第２の実施の形態とほぼ同様に実装・接続し、透明な封止樹脂４をドーム付き円筒形に成形して封止したものである。発光色変換作用も第２の実施の形態に準ずる。
【００１９】
以上本発明の実施の形態の３つの例について述べたが、本発明の実施の形態はこれらの例示に止まらないし、少なくとも種々の変更を加えることが可能である。例えば、各実施の形態において、封止樹脂４内にも蛍光体を混入しても差し支えない。この蛍光体は補助的に作用し、溝１ｅ内の蛍光体に入射しなかった光をも波長を変換することができる。また蛍光体入り樹脂の充填は溝を加工したＬＥＤウエハーの状態で行ってもよいし、個々に分離したＬＥＤ素子の状態で行ってもよい。
【００２０】
また第２、第３に類似の実施の形態において、ＬＥＤ素子１の上面に所定の厚さで蛍光体入り樹脂２を塗布してもよい。これは溝１ｅ内に樹脂２を充填するのと同じ工程で形成することができる。即ち溝からあふれた樹脂を全て掻き取らずに所定量だけ残しておけばよい。この蛍光体入り樹脂の残留層も、ＬＥＤ素子１からのより多くの発光の波長を変換する役割を担うものである。また１個のＬＥＤ素子内の溝の数、設ける方向、幅も深さと共に任意である。ＬＥＤ素子自体の材質・構造も例示したものに限られない。その他にも本発明の構成と特徴を活かした種々の変更が可能である。
【００２１】
【発明の効果】
本発明においては、ＬＥＤ素子に施した溝に蛍光体入り樹脂を充填するので、その総量が高度に一定化すると共に蛍光体が発光部分に密着しまたは近接して存在するため安定で効率の良い発光色の変換が安定に行われる効果がある。またＬＥＤ素子に溝を加工することは容易であるのでコストアップになることを回避することができる効果がある。
【図面の簡単な説明】
【図１】本発明のＬＥＤ素子の実施の形態の一例の上面斜視図であり、（ａ）は蛍光体入り樹脂を充填しない状態を示し、（ｂ）は蛍光体入り樹脂を充填した状態を示す。
【図２】本発明のＬＥＤ素子の実施の形態の一例の下面斜視図である。
【図３】本発明の発光ダイオードの第１の実施の形態の断面図である。
【図４】本発明の発光ダイオードの第２の実施の形態の断面図である。
【図５】本発明の発光ダイオードの第３の実施の形態の断面図である。
【符号の説明】
１ ＬＥＤ素子
１ａ サファイア基板
１ｂ Ｐ層
１ｃ ＰＮジャンクション
１ｄ Ｎ層
１ｅ 溝
１ｆ Ｐ層電極
１ｇ Ｎ層電極
２ 蛍光体入り樹脂
３ ボンディングワイヤ
４ 封止樹脂
５ 基板
５ａ 導体パターン
６ 蛍光体入りダイボンド層
７ 導電接着剤
８ リードフレーム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a structure and manufacturing method of a light emitting diode. More specifically, the present invention relates to a configuration and a manufacturing method of a light emitting diode having an action of converting an original light emission color from an LED element using a phosphor, for example, a white light emission color can be obtained.
[0002]
[Prior art]
LEDs are widely used as main components of light emitters. Further, a technique for converting light emitted from a light emitting body by causing light emitted from the LED to enter the phosphor is well known. For example, there is a light emitting diode that obtains a white light emitting color using a blue LED and a phosphor.
[0003]
In this type of light emitting diode, the problem is how to arrange the LED element that emits light and the phosphor that converts the wavelength of the light. Conventionally proposed structures cover the periphery of the LED element with phosphor, fix the LED element to the base with a die-bonding agent mixed with phosphor, or seal the LED element with sealing resin mixed with phosphor. It was to be enclosed.
[0004]
[Problems to be solved by the invention]
In the above-described prior art, it is difficult to keep the shape and thickness of the resin layer (that is, the total amount of phosphors involved in light conversion) constant. In other words, the number of processes increases and the manufacturing cost increases. In addition, the distribution of the phosphor within the sealing resin or the like tends to vary due to fluctuations in the curing conditions. For these reasons, for example, it has been difficult to generate white light having a stable spectrum intensity distribution from a light emitting diode, including a deviation due to a light emitting direction.
[0005]
An object of the present invention is to provide a light emitting diode structure and manufacturing method that stabilizes the total amount of a resin containing a phosphor that converts luminescent color, integrates it with an LED element, and does not require an excessive increase in man-hours. Is to provide. In the following description, a device that emits light of a predetermined conversion color as soon as power is supplied is referred to as a light emitting diode, and a semiconductor element that emits light used therein is referred to as an LED element.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the LED element of the present invention has the following characteristics.
(1) A lattice in which a PN junction as a light emitting layer and electrodes thereof are formed on one surface of a sapphire substrate, and processed vertically and horizontally to a depth that does not reach the light emitting layer from a surface on the substrate without the light emitting layer. Forming a groove, filling the resin containing the phosphor only in the groove, and curing the resin.
In order to achieve the above object, the light-emitting diode of the present invention has any of the following characteristics.
(2) The LED element as described in (1) above was used, and the electrodes were connected and mounted with a conductive pattern on the substrate and a conductive adhesive or solder, and sealed with a sealing resin .
[0007]
(3) Using the LED element described in (1) above, the electrode is connected and mounted on the upper end of the lead frame with a conductive adhesive or solder, and a transparent sealing resin is molded into a cylindrical shape with a dome and sealed What you did.
[0008]
(4) A PN junction that is a light emitting layer and electrodes thereof are formed on one surface of a sapphire substrate, and the substrate is processed vertically and horizontally to a depth that does not reach the light emitting layer from the surface on the substrate without the light emitting layer. LED element with a groove shaped like
Using resin containing phosphor as a die bond agent, the LED element is die-bonded to the surface of the substrate with the groove facing downward, the die bond agent fills the groove and fixes the LED element to the substrate, and the electrode that the conductor pattern on the substrate are connected by wire bonding, and sealing in a more transparent sealing resin.
[0009]
Moreover, in order to achieve the said objective, the manufacturing method of the light emitting diode of this invention is equipped with either of the following characteristics.
(5) Using a dicer from the side without the light emitting layer on the sapphire substrate of the LED element, or etching a lattice-like groove vertically and horizontally to a depth not reaching the light emitting layer by etching, and fluorescent inside the processed groove Filling the resin containing the body and further curing, connecting and fixing the electrode terminal serving also as the support of the LED element and the electrode provided in the LED element, and the LED element with resin And a step of sealing.
[0010]
(6) Using a dicer on the sapphire substrate of the LED element from the side without the light emitting layer or etching a lattice groove vertically and horizontally to a depth not reaching the light emitting layer by etching, and a die-bonding agent containing a phosphor The step of filling the inside of the groove and applying to the surface on the side having the groove, the step of die-bonding the LED element to the substrate, and connecting the electrode terminal on the substrate and the electrode provided in the LED element Including a step and a step of sealing the LED element with a resin.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a top perspective view of an example of an embodiment of an LED element of the present invention, where (a) shows a state in which a phosphor-containing resin is not filled, and (b) shows a state in which a phosphor-containing resin is filled. . FIG. 2 is a perspective view of the lower surface side of the LED element.
[0012]
In FIG. 1A, reference numeral 1 denotes an LED element, which is a rectangular parallelepiped semiconductor element cut out from a wafer. This element is obtained by epitaxially growing a thin film of a semiconductor material such as gallium nitride on a substrate 1a such as sapphire. The semiconductor layer has a P layer 1b, an N layer 1d, and a PN junction 1c layer at the boundary. Each semiconductor layer is extremely thin and is about several μm (micrometer), and the thickness of the LED element is mostly occupied by the thickness of the sapphire substrate 1a. In the sapphire substrate 1a, vertical and horizontal grooves 1e are dug to a depth that does not reach the semiconductor layer from the surface without the PN junction 1c that is a light emitting layer. FIG. 1B shows a state in which the groove 1e is filled with phosphor-containing resin 2 (resin is transparent) containing (mixed and kneaded) phosphor.
[0013]
The groove 1e can be formed, for example, on the sapphire substrate 1a in a wafer state by etching, or may be formed by cutting a shallow groove with a dicer. If a deep groove is provided for every few shallow grooves, the formation of the groove 1e and the individual cutting and separation of the LED elements 1 from the wafer may be performed in one set of the wafer on the same dicer. it can.
[0014]
In the PN junction 1c which is a light emitting layer, photons are generated from countless points inside thereof and travel in all directions. Since the grooves are finely cut vertically and horizontally, most of the light is directly or the back surface of the P layer electrode 1f and the N layer electrode 1g (FIG. 2) provided on the lower surface side of the LED 1 or the substrate on which the LED element 1 is mounted. After being reflected from the surface of the table (not shown) or the like, the light enters the inside of the phosphor-containing resin 2 in the adjacent groove, and the light whose wavelength is converted by the phosphor fine particles is emitted from the resin layer. All the light emitted from the bottom of the groove to the upper part of the groove passes through the phosphor layer. Some of the light escapes from the top surface without entering the phosphor layer, but because the overall geometric shape is constant, the ratio between the converted light and the unconverted light is high. As a result, the emission color to be converted can be stabilized.
[0015]
FIG. 3 is a cross-sectional view showing a first embodiment of a light-emitting diode according to the present invention in which the LED element 1 is incorporated. In this example, a phosphor-containing die-bonding agent 6 was used as the resin filled in the groove 1e, and the LED element 1 was faced downward and die-bonded to the surface of the substrate 5. The die bond agent 6 may be applied in advance to the side of the LED element 1 where the groove 1b is present, or may be applied in advance to the surface of the substrate 5 and then the LED element 1 may be pressed down and pressed. Then, after the die bond agent 6 is cured, the P-layer electrode 1f and the N-layer electrode 1g are wire-bonded to the conductor pattern 5a on the substrate 5 with the bonding wire 3, and the device is sealed with a transparent sealing resin 4. .
[0016]
The main converted light in this example is light emitted downward from the PN junction 1c, passes through the layer of the phosphor-containing die-bonding agent 6 spread in the groove or on the surface of the substrate 5, is reflected on the upper surface of the substrate 5 and is directed upward. It becomes the light to go. In FIG. 2, the step between the P layer electrode 1f and the N layer electrode 1g (corresponding to the thickness of the N layer) is exaggerated, but this is only about several μm as described above, so that the LED element In the mounting process, this step can be ignored.
[0017]
FIG. 4 is a sectional view showing a second embodiment of the light emitting diode of the present invention. In this example, the LED element 1 is oriented in the same manner as in FIG. 1, and first the resin 2 containing phosphor in the groove 1e is cured, and then the P-layer electrode 1f and the N-layer electrode 1g on the lower surface side are arranged on the substrate 5. The conductive pattern 5a is connected and mounted with a conductive adhesive 7 (or solder) and sealed with a sealing resin 4. The main converted light is light that has passed through the phosphor-containing resin 2 with light emitted upward from the PN junction 1c and light reflected downward on the substrate surface or the like.
[0018]
FIG. 5 is a sectional view showing a third embodiment of the light emitting diode of the present invention. In this example, the LED element 1 is mounted and connected to the upper end of the lead frame 8 in substantially the same manner as in the second embodiment, and the transparent sealing resin 4 is molded into a cylindrical shape with a dome and sealed. is there. The light emission color conversion action is also in accordance with the second embodiment.
[0019]
Although three examples of embodiments of the present invention have been described above, the embodiments of the present invention are not limited to these examples, and at least various modifications can be added. For example, in each embodiment, a phosphor may be mixed into the sealing resin 4. This phosphor acts as an auxiliary, and the wavelength of light that has not entered the phosphor in the groove 1e can be converted. Further, the filling of the phosphor-containing resin may be performed in the state of an LED wafer in which grooves are processed, or may be performed in the state of individually separated LED elements.
[0020]
In the second and third similar embodiments, the phosphor-containing resin 2 may be applied to the upper surface of the LED element 1 with a predetermined thickness. This can be formed in the same process as filling the resin 2 in the groove 1e. That is, it is sufficient to leave a predetermined amount without scraping all the resin overflowing from the groove. The residual layer of the resin containing phosphor also plays a role of converting more light emission wavelengths from the LED element 1. Further, the number of grooves in one LED element, the direction in which the grooves are provided, and the width are also arbitrary along with the depth. The material and structure of the LED element itself are not limited to those illustrated. In addition, various modifications utilizing the configuration and features of the present invention are possible.
[0021]
【The invention's effect】
In the present invention, the groove formed in the LED element is filled with the phosphor-containing resin, so that the total amount thereof is highly constant, and the phosphor is in close contact with or close to the light emitting portion, so that it is stable and efficient. There is an effect that the conversion of the emission color is performed stably. Moreover, since it is easy to process a groove | channel on an LED element, there exists an effect which can avoid that it raises a cost.
[Brief description of the drawings]
FIG. 1 is a top perspective view of an example of an embodiment of an LED element of the present invention, where (a) shows a state in which no phosphor-filled resin is filled, and (b) shows a state in which a phosphor-filled resin is filled. Show.
FIG. 2 is a bottom perspective view of an example of an embodiment of an LED element of the present invention.
FIG. 3 is a cross-sectional view of the first embodiment of the light-emitting diode of the present invention.
FIG. 4 is a cross-sectional view of a second embodiment of a light emitting diode of the present invention.
FIG. 5 is a cross-sectional view of a third embodiment of a light emitting diode of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 LED element 1a Sapphire substrate 1b P layer 1c PN junction 1d N layer 1e Groove 1f P layer electrode 1g N layer electrode 2 Phosphor containing resin 3 Bonding wire 4 Sealing resin 5 Substrate 5a Conductor pattern 6 Phosphor containing die bond layer 7 Conductivity Adhesive 8 Lead frame

Claims (6)

サファイア基板の一方の面に発光層であるＰＮジャンクションとそれらの電極を形成し、前記基板に前記発光層のない側の面から前記発光層に達しない深さに縦横に加工した格子状の溝を形成し、該溝の内部にのみ蛍光体を含有した樹脂を充填し、該樹脂を硬化して成ることを特徴とするＬＥＤ素子。 A PN junction that is a light emitting layer and electrodes thereof are formed on one surface of a sapphire substrate, and a lattice-like groove that is processed vertically and horizontally to a depth that does not reach the light emitting layer from the surface without the light emitting layer on the substrate. The LED element is formed by filling a resin containing a phosphor only inside the groove and curing the resin . 請求項１に記載のＬＥＤ素子を使用し、前記電極を基板上の導体パターンと導電接着剤あるいはハンダにより接続実装し、封止樹脂にて封止したことを特徴とする発光ダイオード。A light emitting diode using the LED element according to claim 1, wherein the electrode is connected and mounted on a conductive pattern on a substrate with a conductive adhesive or solder, and sealed with a sealing resin . 請求項１に記載のＬＥＤ素子を使用し、前記電極をリードフレームの上端に導電接着剤あるいはハンダにより接続実装し、透明な封止樹脂をドーム付き円筒形に成形して封止したことを特徴とする発光ダイオード。Characterized in that billing using LED element according to claim 1, wherein the electrode connected implemented by a conductive adhesive or solder at the upper end of the lead frame, and sealing by molding the transparent encapsulating resin into a cylindrical shape with a dome A light emitting diode. サファイア基板の一方の面に発光層であるＰＮジャンクションとそれらの電極を形成し、前記基板に前記発光層のない側の面から前記発光層に達しない深さに縦横に加工した格子状の溝を形成したＬＥＤ素子を使用し、
蛍光体を含有した樹脂をダイボンド剤として、前記ＬＥＤ素子を前記溝を下向きにして基板の表面にダイボンドし、前記ダイボンド剤は前記溝を充填すると共に前記ＬＥＤ素子を基板に固定し、前記電極と前記基板上の導体パターンをワイヤボンディングで接続し、更に透明な封止樹脂で封止したことを特徴とする発光ダイオード。 A PN junction that is a light emitting layer and electrodes thereof are formed on one surface of a sapphire substrate, and a lattice-like groove that is processed vertically and horizontally to a depth that does not reach the light emitting layer from the surface without the light emitting layer on the substrate. Using the LED element formed,
Using resin containing phosphor as a die bond agent, the LED element is die-bonded to the surface of the substrate with the groove facing downward, the die bond agent fills the groove and fixes the LED element to the substrate, and the electrode light emitting diodes, characterized in that the conductor pattern on the substrate are connected by wire bonding, and sealing in a more transparent sealing resin. ＬＥＤ素子のサファイア基板に発光層のない側からダイサーを用いあるいはエッチングによって前記発光層に達しない深さに縦横に格子状の溝を加工する工程と、前記加工した溝の内部に蛍光体を含有した樹脂を充填して更に硬化させる工程と、前記ＬＥＤ素子の支持体を兼ねた電極端子と前記ＬＥＤ素子に備えた電極とを接続しかつ固定する工程と、前記ＬＥＤ素子を樹脂で封止する工程とを含むことを特徴とする請求項２または３に記載の発光ダイオードの製造方法。Using a dicer on the sapphire substrate of the LED element from the side without the light emitting layer or etching a grid-like groove vertically and horizontally to a depth not reaching the light emitting layer by etching, and containing a phosphor inside the processed groove A step of filling and curing the resin, a step of connecting and fixing an electrode terminal serving also as a support for the LED element and an electrode provided in the LED element, and sealing the LED element with a resin The method for manufacturing a light-emitting diode according to claim 2 , further comprising a step. ＬＥＤ素子のサファイア基板に発光層のない側からダイサーを用いあるいはエッチングによって前記発光層に達しない深さに縦横に格子状の溝を加工する工程と、蛍光体を含有したダイボンド剤を前記溝の内部に充填すると共に前記溝のある側の面に塗布する工程と、前記ＬＥＤ素子を基板にダイボンドする工程と、前記基板上の電極端子と前記ＬＥＤ素子に備えた電極とを接続する工程と、前記ＬＥＤ素子を樹脂で封止する工程とを含むことを特徴とする請求項４に記載の発光ダイオードの製造方法。A step of processing a grid-like groove vertically and horizontally to a depth not reaching the light emitting layer by etching using a dicer from the side having no light emitting layer on the sapphire substrate of the LED element, and a die-bonding agent containing a phosphor in the groove A step of filling the inside and applying to the grooved surface, a step of die-bonding the LED element to the substrate, a step of connecting the electrode terminal on the substrate and the electrode provided in the LED element, The method for producing a light emitting diode according to claim 4, further comprising a step of sealing the LED element with a resin.
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