JP3350484B2 - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP3350484B2 JP3350484B2 JP21452799A JP21452799A JP3350484B2 JP 3350484 B2 JP3350484 B2 JP 3350484B2 JP 21452799 A JP21452799 A JP 21452799A JP 21452799 A JP21452799 A JP 21452799A JP 3350484 B2 JP3350484 B2 JP 3350484B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- light
- transparent resin
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Die Bonding (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表面実装型の発光
ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-mounted light emitting diode.
【０００２】[0002]
【従来の技術】従来、この種の発光ダイオードとして
は、例えば図６に示したものが知られている。この発光
ダイオード１は、ガラスエポキシ基板（以下、ガラエポ
基板という）２の上面に一対の上面電極（カソード電極
３とアノード電極４）をパターン形成し、カソード電極
３の上に導電性接着剤５によって発光ダイオード素子６
を固着すると共に、発光ダイオード素子６の上面電極と
アノード電極４とをボンディングワイヤ７で接続し、こ
のボンディングワイヤ７及び発光ダイオード素子６を樹
脂封止体８によって封止した構造のものである。使用時
にはマザーボード１１の上面に前記発光ダイオード１を
載置し、上面電極と一体に成形された下面電極９，１０
をマザーボード１１上のプリント配線１２，１３に半田
１４で固定することによって表面実装が実現するもので
ある。2. Description of the Related Art Conventionally, as this kind of light emitting diode, for example, the one shown in FIG. 6 is known. In this light emitting diode 1, a pair of upper electrodes (cathode electrode 3 and anode electrode 4) are pattern-formed on the upper surface of a glass epoxy substrate (hereinafter, referred to as a glass epoxy substrate) 2, and a conductive adhesive 5 is formed on the cathode electrode 3. Light emitting diode element 6
And the upper electrode of the light emitting diode element 6 and the anode electrode 4 are connected by a bonding wire 7, and the bonding wire 7 and the light emitting diode element 6 are sealed by a resin sealing body 8. In use, the light emitting diode 1 is mounted on the upper surface of the motherboard 11, and the lower electrodes 9, 10 formed integrally with the upper electrode.
Is fixed to the printed wirings 12 and 13 on the motherboard 11 with solder 14 to realize surface mounting.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の発光ダイオード１にあっては、マザーボード１１に
実装したときの全体の高さ寸法ｈ１は、マザーボード１
１の板厚に発光ダイオード１のガラエポ基板２の板厚と
樹脂封止体８の厚みを加えたものであり、薄型化の要請
を十分に満足するものではなかった。However, in the above-mentioned conventional light emitting diode 1, the overall height h1 when mounted on the motherboard 11 is smaller than that of the motherboard 1.
This is a result of adding the thickness of the glass epoxy substrate 2 of the light emitting diode 1 and the thickness of the resin sealing body 8 to the thickness of the light emitting diode 1, which does not sufficiently satisfy the demand for thinning.
【０００４】そこで、本発明の目的は、マザーボードに
発光ダイオードを実装した時に、マザーボードを含む全
体の高さ寸法をできるだけ小さくして薄型化を図るよう
にした表面実装型の発光ダイオードを提供するものであ
る。Accordingly, an object of the present invention is to provide a surface mount type light emitting diode in which when the light emitting diode is mounted on the motherboard, the overall height including the motherboard is made as small as possible to reduce the thickness. It is.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明の請求項１に係る発光ダイオードは、マザー
ボードに開設された開口部の端部に電極部を介して外周
部が載置される台座と、この台座に透明接着剤を介して
固着され素子基板が透明である窒化ガリウム系化合物半
導体からなる発光ダイオード素子と、前記発光ダイオー
ド素子の上方側に設けられる非透過部と、前記台座の発
光ダイオード素子側に設けられる樹脂封止体とを備え、
前記発光ダイオード素子及び樹脂封止体がマザーボード
の開口部内に挿入されると共に、台座には少なくとも発
光ダイオード素子が載置される部位に台座の上面から下
面まで達する透明樹脂部が設けられ、前記発光ダイオー
ド素子から出た光が透明樹脂部を透過して導かれるよう
にしたことを特徴とする。 According to a first aspect of the present invention, there is provided a light emitting diode comprising a motherboard.
The outer periphery of the opening at the end of the opening on the board via the electrode
The base on which the part is placed, and this base via transparent adhesive
A gallium nitride-based compound half that is fixed and the element substrate is transparent
A light-emitting diode element comprising a conductor;
A non-transmissive portion provided on the upper side of the
Resin sealing body provided on the photodiode element side,
The light emitting diode element and the resin sealing body are a motherboard
At the same time
From the top of the pedestal to the position where the photodiode element is mounted
A transparent resin portion reaching the surface of the light emitting diode.
The light emitted from the gate element is guided through the transparent resin part.
It is characterized by the following.
【０００６】また、本発明の請求項２に係る発光ダイオ
ードは、前記透明樹脂部が、発光ダイオード素子が載置
される部位に対応して開設された台座の貫通孔と、この
貫通孔内に充填された透明樹脂とからなることを特徴と
する。In a light emitting diode according to a second aspect of the present invention, the transparent resin portion has a light emitting diode element mounted thereon.
Through holes in the pedestal opened corresponding to the part
The transparent resin is filled in the through hole .
【０００７】また、本発明の請求項３に係る発光ダイオ
ードは、前記透明樹脂部が、台座を構成する透明樹脂体
によって形成されてなることを特徴とする。Further, in the light emitting diode according to claim 3 of the present invention, the transparent resin portion is a transparent resin body forming a pedestal.
Characterized by being formed by
【０００８】また、本発明の請求項４に係る発光ダイオ
ードは、前記透明樹脂部及び透明接着剤の少なくとも一
方にイットリウム化合物からなる蛍光材が分散され、発
光ダイオード素子から出た青色発光が透明樹脂部を透過
して台座の下面側に導かれる間で白色発光に波長変換す
ることを特徴とする。Further, in the light emitting diode according to a fourth aspect of the present invention , at least one of the transparent resin portion and the transparent adhesive is provided.
Phosphor material made of yttrium compound is dispersed
Blue light emitted from the photodiode element passes through the transparent resin part
And convert the wavelength to white light while being guided to the lower side of the pedestal.
Characterized in that that.
【０００９】また、本発明の請求項５に係る発光ダイオ
ードは、前記台座の下面側には透明樹脂部の下方に集光
レンズ部が突設されていることを特徴とする。According to a fifth aspect of the present invention, in the light emitting diode, light is condensed below the transparent resin portion on the lower surface side of the pedestal.
It is characterized in that the lens portion is provided protruding .
【００１０】また、本発明の請求項６に係る発光ダイオ
ードは、前記発光ダイオード素子の上方側に設けられた
非透過部が、前記発光ダイオード素子の上面全体に設け
られる一対の非透過電極であることを特徴とする。In a light-emitting diode according to a sixth aspect of the present invention, the non-transmissive portion provided above the light-emitting diode element is a pair of non-transmissive electrodes provided on the entire upper surface of the light-emitting diode element. It is characterized by the following.
【００１１】また、本発明の請求項７に係る発光ダイオ
ードは、前記発光ダイオード素子の上方側に設けられた
非透過部が、透明の樹脂封止体の外周面を被う反射膜で
あることを特徴とする。Further, in the light emitting diode according to claim 7 of the present invention, the non-transmissive portion provided above the light emitting diode element is a reflective film covering an outer peripheral surface of a transparent resin sealing body. It is characterized by.
【００１２】また、本発明の請求項８に係る発光ダイオ
ードは、前記発光ダイオード素子の上方側に設けられた
非透過部が、不透明の樹脂封止体であることを特徴とす
る。Further, in the light emitting diode according to claim 8 of the present invention, the non-transmissive portion provided above the light emitting diode element is an opaque resin sealing body.
【００１３】[0013]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る発光ダイオードの実施形態を詳細に説明する。図
１及び図２は、表面実装型発光ダイオードの第1実施形
態を示したものである。この実施形態に係る表面実装型
の発光ダイオード２１は、台座となる矩形状のガラスエ
ポキシ基板（以下、ガラエポ基板という）２２の上面に
一対の上面電極（カソード電極２３とアノード電極２
４）がパターン形成されると共に、ガラエポ基板２２の
中央部には上面２６ａから下面２６ｂに断面四角形状の
貫通孔２５が設けられている。この貫通孔２５には透明
樹脂が充填され、ガラエポ基板２２の上面２６ａ及び下
面２６ｂと略同一面の透明樹脂部２７を形成する。この
実施形態では透明樹脂部２７の中にイットリウム化合物
等からなる蛍光材２８が分散されており、後述するよう
に青色発光を白色発光に波長変換する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show a first embodiment of a surface-mounted light emitting diode. The surface-mounted light emitting diode 21 according to this embodiment includes a pair of upper surface electrodes (a cathode electrode 23 and an anode electrode 2) on the upper surface of a rectangular glass epoxy substrate (hereinafter, referred to as a glass epoxy substrate) 22 serving as a pedestal.
4) is formed in a pattern, and a through hole 25 having a rectangular cross section is provided in the center of the glass epoxy substrate 22 from the upper surface 26a to the lower surface 26b. The through-hole 25 is filled with a transparent resin to form a transparent resin portion 27 substantially flush with the upper surface 26a and the lower surface 26b of the glass epoxy substrate 22. In this embodiment, a fluorescent material 28 made of an yttrium compound or the like is dispersed in a transparent resin portion 27, and converts blue light emission into white light emission as described later.
【００１４】一方、前記ガラエポ基板２２の上面２６ａ
には、前記透明樹脂部２７の略真上に発光ダイオード素
子２９が搭載されている。この発光ダイオード素子２９
は窒化ガリウム系化合物半導体からなる青色発光素子で
あり、透明ガラスであるサファイヤ基板３０の上面にｎ
型半導体３１とｐ型半導体３２を成長させた構造であ
る。ｎ型半導体３１及びｐ型半導体３２は、それぞれの
上面に電極を備えるが、この実施形態では非透過性の電
極３３，３４がｎ型半導体３１及びｐ型半導体３２の各
上面全体に形成されており、これによって上方への発光
が略完全に遮蔽される。これらの非透過性の電極３３，
３４と前記ガラエポ基板２２に設けられたカソード電極
２３及びアノード電極２４とは、ボンディングワイヤ３
５，３６によって接続されている。On the other hand, the upper surface 26a of the glass epoxy substrate 22
A light emitting diode element 29 is mounted almost directly above the transparent resin portion 27. This light emitting diode element 29
N is Ri <br/> Oh blue light emitting element made of a gallium nitride-based compound semiconductor, the upper surface of the sapphire substrate 30 is a transparency glass
This is a structure in which a type semiconductor 31 and a p-type semiconductor 32 are grown. The n-type semiconductor 31 and the p-type semiconductor 32 have electrodes on their respective upper surfaces. In this embodiment, non-transparent electrodes 33 and 34 are formed on the entire upper surfaces of the n-type semiconductor 31 and the p-type semiconductor 32, respectively. As a result, upward light emission is almost completely blocked. These non-permeable electrodes 33,
34 and the cathode electrode 23 and the anode electrode 24 provided on the glass epoxy substrate 22
5 and 36.
【００１５】前記発光ダイオード素子２９は、その下面
側に塗布された透明接着剤３７を介して透明樹脂部２７
の上面に固着されている。また、発光ダイオード素子２
９及びボンディングワイヤ３５，３６は、ガラエポ基板
２２の上面に形成された直方体形状の透明の樹脂封止体
３８によって保護されている。The light emitting diode element 29 is provided with a transparent resin portion 27 via a transparent adhesive 37 applied to the lower surface side.
Is fixed to the upper surface of. Also, the light emitting diode element 2
9 and the bonding wires 35 and 36 are protected by a rectangular parallelepiped transparent resin sealing body 38 formed on the upper surface of the glass epoxy substrate 22.
【００１６】上述のような構成からなる発光ダイオード
２１にあっては、発光ダイオード素子２９のｎ型半導体
３１とｐ型半導体３２との境界面から上下方向に青色光
が発光するが、上方向へ発光した青色光は発光ダイオー
ド素子２９の上面全体に設けられた非透過性の電極３
３，３４に遮光されるために、樹脂封止体３８内への透
過が殆どない状態で非透過性の電極３３，３４からの反
射を受ける。これらの反射光及び最初からサファイヤ基
板３０を透過して下方側に向かう青色発光は、透明接着
剤３７を介してガラエポ基板２２の貫通孔２５に充填さ
れている透明樹脂部２７を透過し、ガラエポ基板２２の
下面２６ｂ側に照射される。その際、透明樹脂部２７内
に分散されている蛍光材２８が青色発光の短波長によっ
て励起され、青色発光を黄色味のある発光に波長変換す
る。そして、元々の青色発光と波長変換された発光とが
互いに混色することで、ガラエポ基板２２の下面２６ｂ
側では白色に近い発光が得られることになる。In the light emitting diode 21 having the above-described structure, blue light is emitted vertically from the boundary between the n-type semiconductor 31 and the p-type semiconductor 32 of the light emitting diode element 29, but is emitted upward. The emitted blue light is applied to the non-transmissive electrode 3 provided on the entire upper surface of the light emitting diode element 29.
Since the light is shielded by the electrodes 3 and 34, the light is reflected from the non-transmissive electrodes 33 and 34 with almost no transmission into the resin sealing body 38. The reflected light and the blue light emitted from the beginning and transmitted downward through the sapphire substrate 30 pass through the transparent resin portion 27 filled in the through-hole 25 of the glass epoxy substrate 22 via the transparent adhesive 37, and The light is emitted to the lower surface 26b side of the substrate 22. At this time, the fluorescent material 28 dispersed in the transparent resin portion 27 is excited by the short wavelength of blue light emission, and converts the wavelength of the blue light emission into light with a yellow tint. Then, the original blue light emission and the wavelength-converted light emission are mixed with each other, so that the lower surface 26 b of the glass epoxy substrate 22 is mixed.
On the side, light emission close to white is obtained.
【００１７】次に、上記構成からなる発光ダイオード２
１の表面実装方法を説明する。図２は、マザーボード４
１に発光ダイオード２１を表面実装した時の状態を示し
たものである。この実施形態では、予めマザーボード４
１に発光ダイオード２１の樹脂封止体３８が挿入される
四角形状の挿入孔４２を開設しておき、実装時には前記
発光ダイオード２１を上下逆にしてマザーボード４１上
に載置し、挿入孔４２内に樹脂封止体３８全体を挿入す
る。ガラエポ基板２２の外周縁は、前記挿入孔４２の周
囲に載せ置かれるので、ガラエポ基板２２上に設けられ
たカソード電極２３及びアノード電極２４を挿入孔４２
の周囲にプリントされたマザーボード４１上の配線パタ
ーン４３，４４に半田４５で固定する。Next, the light emitting diode 2 having the above configuration
The surface mounting method 1 will be described. FIG. 2 shows the motherboard 4
1 shows a state when the light emitting diode 21 is surface-mounted. In this embodiment, the motherboard 4
1, a rectangular insertion hole 42 into which the resin sealing body 38 of the light emitting diode 21 is inserted is opened, and the light emitting diode 21 is placed upside down on the mother board 41 at the time of mounting. The entirety of the resin sealing body 38 is inserted into the resin sealing body 38. Since the outer peripheral edge of the glass epoxy substrate 22 is placed around the insertion hole 42, the cathode electrode 23 and the anode electrode 24 provided on the glass epoxy substrate 22 are inserted into the insertion hole 42.
Is fixed to the wiring patterns 43 and 44 on the motherboard 41 printed on the periphery thereof with solder 45.
【００１８】上述の実装手段では、発光ダイオード２１
が上下逆に実装されるために、マザーボード４１の上方
が発光ダイオード２１によって照射されることになる。
その際、青色から白色への波長変換が蛍光材２８を含有
するガラエポ基板２２の透明樹脂部２７内で行われるの
で、指向性に優れた輝度の高い白色発光が得られる。ま
た、蛍光材２８が分散されている透明樹脂部２７は、そ
の高さ幅が大きいので、その中で波長変換が十分になさ
れると共に色度の調整も容易である。なお、挿入孔４２
の内周壁を反射面とすることで、上方への指向性をさら
にアップさせることができる。In the above mounting means, the light emitting diode 21
Are mounted upside down, the upper part of the motherboard 41 is illuminated by the light emitting diodes 21.
At this time, since the wavelength conversion from blue to white is performed in the transparent resin portion 27 of the glass epoxy substrate 22 containing the fluorescent material 28, white light emission with excellent directivity and high luminance can be obtained. Further, since the transparent resin portion 27 in which the fluorescent material 28 is dispersed has a large height, the wavelength conversion is sufficiently performed in the transparent resin portion 27 and the chromaticity is easily adjusted. The insertion hole 42
By using the inner peripheral wall as a reflecting surface, the directivity upward can be further improved.
【００１９】上記マザーボード４１を含めた全体の高さ
寸法ｈ２は、マザーボード４１の厚さに発光ダイオード
２１のガラエポ基板２２の厚さを加えただけであるの
で、従来に比べて樹脂封止体３８の厚みが加算されない
分、全体の高さ寸法を抑えることができる。The overall height h2 including the motherboard 41 is simply the thickness of the motherboard 41 plus the thickness of the glass epoxy substrate 22 of the light emitting diode 21, so that the resin encapsulant 38 The total height dimension can be suppressed because the thickness is not added.
【００２０】図３は、本発明の第２実施形態を示したも
のである。この実施形態ではガラエポ基板２２の下面２
６ｂ側において、透明樹脂部２７の直上に半球状のレン
ズ部４６を設けた以外は前記実施形態と略同様の構成か
らなるので詳細な説明を省略する。前記レンズ部４６も
透明樹脂によって形成されている。この実施形態では蛍
光材２８が分散されている透明樹脂部２７の中を透過し
た光がガラエポ基板２２の下面２６ｂ側でレンズ部４６
によって屈折し、集光性が高められることになるので、
白色発光の輝度アップが図られることになる。FIG. 3 shows a second embodiment of the present invention. In this embodiment, the lower surface 2 of the glass epoxy substrate 22
On the 6b side, except that the hemispherical lens portion 46 is provided immediately above the transparent resin portion 27, the configuration is substantially the same as that of the above-described embodiment, and therefore detailed description is omitted. The lens part 46 is also formed of a transparent resin. In this embodiment, light transmitted through the transparent resin portion 27 in which the fluorescent material 28 is dispersed is transmitted to the lens portion 46 on the lower surface 26b side of the glass epoxy substrate 22.
Will be refracted and the light collecting property will be improved,
The brightness of white light emission is increased.
【００２１】なお、上記いずれの実施形態もガラエポ基
板２２の貫通孔２５内に充填した透明樹脂部２７の中に
蛍光材２８を分散させた場合について説明したが、透明
接着剤３７の中に蛍光材２８を分散させることも可能で
ある。In each of the above embodiments, the case where the fluorescent material 28 is dispersed in the transparent resin portion 27 filled in the through hole 25 of the glass epoxy substrate 22 has been described. It is also possible to disperse the material 28.
【００２２】図４は本発明の第３実施形態を示したもの
である。この実施形態では台座を透明樹脂基板４７で構
成し、その中に蛍光材２８を分散させたものである。前
記実施形態と同様、窒化ガリウム系化合物半導体からな
る発光ダイオード素子２９は、透明接着剤３７によって
透明樹脂基板４７に固着されると共に、その上方が透明
の樹脂封止体３８によって保護されている。マザーボー
ド４１に対しては上下逆に実装されており、前記実施形
態と同じように、マザーボード４１の上方を照射する。
この実施形態は広範囲での照射に適するが、光の指向性
や集光性を得る場合には、先の実施形態と同様、透明樹
脂基板４７の下面２６ｂ側に半球状のレンズ部を設けた
り、透明接着剤の中に蛍光材を分散させたりすればよ
い。FIG. 4 shows a third embodiment of the present invention. In this embodiment, the pedestal is formed of a transparent resin substrate 47, and the fluorescent material 28 is dispersed therein. As in the above-described embodiment, the light emitting diode element 29 made of a gallium nitride-based compound semiconductor is fixed to a transparent resin substrate 47 by a transparent adhesive 37 and the upper part thereof is protected by a transparent resin sealing body 38. It is mounted upside down on the motherboard 41 and irradiates the area above the motherboard 41 as in the previous embodiment.
This embodiment is suitable for irradiation over a wide range. However, when obtaining directivity and light condensing properties of light, a hemispherical lens portion may be provided on the lower surface 26b side of the transparent resin substrate 47 as in the previous embodiment. Alternatively, the fluorescent material may be dispersed in the transparent adhesive.
【００２３】図５は本発明の第４実施形態を示したもの
である。この実施形態では窒化ガリウム系化合物半導体
からなる発光ダイオード素子２９の上面に一対の電極３
３ａ，３４ａを部分的に設けると共に、発光ダイオード
素子２９を封止している樹脂封止体３８ａをドーム状に
形成し、この樹脂封止体３８ａの外周面に反射膜４８を
コーティングしたものである。先の実施形態と同様、台
座が透明樹脂基板４７によって形成され、その中に蛍光
材２８が分散される。また、一対の電極３３ａ，３４ａ
が非透過性である必要はない。樹脂封止体３８ａは透明
樹脂を材料として形成され、反射膜４８は銀やアルミニ
ウムなどの蒸着によって形成される。FIG. 5 shows a fourth embodiment of the present invention. In this embodiment, a pair of electrodes 3 is provided on the upper surface of a light emitting diode element 29 made of a gallium nitride compound semiconductor.
3a and 34a are partially provided, and a resin sealing body 38a for sealing the light emitting diode element 29 is formed in a dome shape, and the outer peripheral surface of the resin sealing body 38a is coated with a reflective film 48. is there. As in the previous embodiment, the pedestal is formed by the transparent resin substrate 47, and the fluorescent material 28 is dispersed therein. Also, a pair of electrodes 33a, 34a
Need not be impermeable. The resin sealing body 38a is formed using a transparent resin as a material, and the reflection film 48 is formed by vapor deposition of silver, aluminum, or the like.
【００２４】従って、この実施形態では発光ダイオード
素子２９から樹脂封止体３８ａ側に出た光は、電極３３
ａ，３４ａが部分的にしか形成されてないために、樹脂
封止体３８ａを透過し、反射膜４８によって反射を受け
る。この時、反射膜４８が凹レンズのように作用するた
めに、反射膜４８で反射した光が平行光４９となって透
明樹脂基板４７を透過し、その際に透明樹脂基板４７の
中に分散された蛍光材２８を励起して波長変換される。Therefore, in this embodiment, light emitted from the light emitting diode element 29 to the resin sealing body 38a is
Since a and a are formed only partially, they pass through the resin sealing body 38a and are reflected by the reflection film. At this time, since the reflection film 48 acts like a concave lens, the light reflected by the reflection film 48 becomes parallel light 49 and passes through the transparent resin substrate 47, and is dispersed in the transparent resin substrate 47 at that time. The excited fluorescent material 28 is excited to be wavelength-converted.
【００２５】なお、上述した第１実施形態及び第２実施
形態においても、発光ダイオード素子２９の上面に設け
られる電極３３，３４が部分的なものであってもよく、
その場合には樹脂封止体３８を不透明樹脂で形成して光
の透過を妨げたり、先の第４実施形態のように、樹脂封
止体３８の外周面に反射膜を設けることでガラエポ基板
２２の下面２６ｂ側に発光を導くことができる。反射膜
を設ける場合の樹脂封止体の形状は、直方体であっても
ドーム状であっても構わない。In the first and second embodiments described above, the electrodes 33 and 34 provided on the upper surface of the light emitting diode element 29 may be partial.
In this case, the resin sealing body 38 is formed of an opaque resin to prevent light transmission, or as in the fourth embodiment, a reflection film is provided on the outer peripheral surface of the resin sealing body 38 to form a glass epoxy substrate. Light emission can be guided to the lower surface 26b side of the bottom 22. When the reflection film is provided, the shape of the resin sealing body may be a rectangular parallelepiped or a dome shape.
【００２６】上述した全ての実施形態では、波長変換型
の発光ダイオードについて説明したが、本発明は波長変
換をしない発光ダイオードであっても、サファイヤ基板
等の透明基板を用いて下面側へ光が照射される発光ダイ
オード素子を用いた発光ダイオードにも適用できること
は勿論である。また、上記いずれの実施形態も発光ダイ
オード素子と電極をボンディングワイヤによって接続し
た場合について説明したが、この発明はこれに限定され
るものではなく、例えば半田バンプを用いたフリップチ
ップ実装などの接続方法も含まれるものである。In all the embodiments described above, wavelength conversion type light emitting diodes have been described. However, in the present invention, even a light emitting diode which does not perform wavelength conversion, light is transmitted to the lower surface side using a transparent substrate such as a sapphire substrate. Of course, the present invention can be applied to a light emitting diode using a light emitting diode element to be irradiated. In each of the above embodiments, the case where the light emitting diode element and the electrode are connected by a bonding wire has been described, but the present invention is not limited to this, and for example, a connection method such as flip chip mounting using solder bumps Is also included.
【００２７】[0027]
【発明の効果】以上説明したように、本発明に係る発光
ダイオードによれば、マザーボードに開設された開口部
内に発光ダイオード素子や樹脂封止体を挿入した状態で
表面実装でき、且つマザーボードの上方に発光できるよ
うにしたので、マザーボードの上方に突出する部分が台
座部分だけとなって、マザーボードを含む発光ダイオー
ド全体の高さ寸法を抑えることができ、発光ダイオード
の薄型化が達成できた。As described above, according to the light emitting diode of the present invention , the opening formed in the motherboard is provided.
With the light emitting diode element and resin sealing body inserted inside
Can be surface mounted and emit light above the motherboard
So that the part protruding above the motherboard is
Only the seat part, the light emitting diode including the motherboard
Light emitting diode
Was achieved .
【００２８】また、本発明によれば、台座に貫通孔を開
設し、この貫通孔に充填した透明樹脂部を通して発光ダ
イオード素子から出た光を台座の下面側に導くようにし
たので、発光が拡散せずに上方への指向性が良くなる。
また、これに集光レンズ部を設けることで高輝度の発光
が得られることになる。Further, according to the present invention, a through hole is formed in the pedestal, and light emitted from the light emitting diode element is guided to the lower surface side of the pedestal through the transparent resin portion filled in the through hole. The upward directivity is improved without diffusion.
In addition, by providing the condenser lens portion, high-luminance light emission can be obtained.
【００２９】さらに、台座の上に窒化ガリウム系化合物
半導体からなる青色発光ダイオード素子を搭載し、その
裏面側の透明樹脂部又はこの透明樹脂部に発光ダイオー
ド素子を固着するための透明接着剤に青色発光によって
励起される蛍光材を含有させたので、白色発光の表面実
装型発光ダイオードをより一層薄型化することができ
た。Further, a blue light-emitting diode element made of a gallium nitride-based compound semiconductor is mounted on the pedestal, and a transparent resin portion on the back surface or a transparent adhesive for fixing the light-emitting diode element to the transparent resin portion is used. Since the fluorescent material excited by light emission was contained, the thickness of the white light-emitting surface-mounted light emitting diode could be further reduced.
【００３０】また、窒化ガリウム系化合物半導体からな
る青色発光ダイオードの場合は、透明のサファイヤガラ
スを素子基板として使用し、且つ素子基板の裏面側には
電極が形成されないため、発光ダイオード素子の上面側
よりサファイヤガラスを通して素子の下面側に発光させ
た方が発光効率がよく輝度アップも図られる。In the case of a blue light emitting diode made of a gallium nitride compound semiconductor, transparent sapphire glass is used as an element substrate, and no electrode is formed on the back side of the element substrate. By emitting light through the sapphire glass to the lower surface of the element, the luminous efficiency is improved and the brightness is increased.
【図１】本発明に係る発光ダイオードの第１実施形態を
示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of a light emitting diode according to the present invention.
【図２】上記発光ダイオードをマザーボードに実装した
時の断面図である。FIG. 2 is a cross-sectional view when the light emitting diode is mounted on a motherboard.
【図３】本発明に係る発光ダイオードの第２実施形態を
示す図２と同様の断面図である。FIG. 3 is a sectional view similar to FIG. 2, showing a second embodiment of the light emitting diode according to the present invention.
【図４】本発明に係る発光ダイオードの第３実施形態を
示す図２と同様の断面図である。FIG. 4 is a sectional view similar to FIG. 2, showing a third embodiment of the light emitting diode according to the present invention.
【図５】本発明に係る発光ダイオードの第４実施形態を
示す図２と同様の断面図である。FIG. 5 is a sectional view similar to FIG. 2, showing a fourth embodiment of a light emitting diode according to the present invention.
【図６】従来における発光ダイオードをマザーボードに
実装した時の断面図である。FIG. 6 is a cross-sectional view when a conventional light emitting diode is mounted on a motherboard.
２１ 発光ダイオード ２２ ガラエポ基板（台座） ２５ 貫通孔 ２６ａ 上面 ２６ｂ 下面 ２７ 透明樹脂部 ２８ 蛍光材 ２９ 発光ダイオード素子 ３０ サファイヤ基板（素子基板） ３３，３４ 非透過電極（非透過部） ３７ 透明接着剤 ３８ 樹脂封止体 ４６ レンズ部 ４７ 透明樹脂基板（台座） ４８ 反射膜 Reference Signs List 21 light emitting diode 22 glass epoxy substrate (pedestal) 25 through hole 26a upper surface 26b lower surface 27 transparent resin part 28 fluorescent material 29 light emitting diode element 30 sapphire substrate (element substrate) 33, 34 non-transmissive electrode (non-transmissive part) 37 transparent adhesive 38 Resin sealing body 46 Lens unit 47 Transparent resin substrate (pedestal) 48 Reflective film
フロントページの続き (56)参考文献 特開 平10−151794（ＪＰ，Ａ) 特開 平11−191641（ＪＰ，Ａ) 特開 平７−147432（ＪＰ，Ａ) 特開 平11−163409（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 H01L 21/52 Continuation of front page (56) References JP-A-10-151794 (JP, A) JP-A-11-191641 (JP, A) JP-A-7-147432 (JP, A) JP-A-11-163409 (JP) , A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00 H01L 21/52
Claims (8)
に電極部を介して外周部が載置される台座と、A pedestal on which an outer peripheral portion is placed via an electrode portion, この台座に透明接着剤を介して固着され素子基板が透明The element substrate is fixed to this pedestal via transparent adhesive and the element substrate is transparent.
である窒化ガリウム系化合物半導体からなる発光ダイオLight-emitting diode composed of gallium nitride-based compound semiconductor
ード素子と、Load element, 前記発光ダイオード素子の上方側に設けられる非透過部Non-transmissive part provided above the light emitting diode element
と、When, 前記台座の発光ダイオード素子側に設けられる樹脂封止Resin sealing provided on the light emitting diode element side of the pedestal
体とを備え、With the body, 前記発光ダイオード素子及び樹脂封止体がマザーボードThe light emitting diode element and the resin sealing body are a motherboard
の開口部内に挿入されると共に、台座には少なくとも発At the same time
光ダイオード素子が載置される部位に台座の上面から下From the top of the pedestal to the position where the photodiode element is mounted
面まで達する透明樹脂部が設けられ、前記発光ダイオーA transparent resin portion reaching the surface of the light emitting diode.
ド素子から出た光が透明樹脂部を透過して導かれるようThe light emitted from the gate element is guided through the transparent resin part.
にしたことを特徴とする発光ダイオード。A light emitting diode, characterized in that:
が載置される部位に対応して開設された台座の貫通孔Through holes in the pedestal opened corresponding to the part where the
と、この貫通孔内に充填された透明樹脂とからなる請求And a transparent resin filled in the through hole.
項１記載の発光ダイオード。Item 3. A light emitting diode according to item 1.
樹脂体によって形成されてなる請求項１記載の発光ダイThe light emitting die according to claim 1, wherein the light emitting die is formed of a resin body.
オード。Aether.
とも一方にイットリウム化合物からなる蛍光材が分散さ
れ、発光ダイオード素子から出た青色発光が透明樹脂部
を透過して台座の下面側に導かれる間で白色発光に波長
変換する請求項１記載の発光ダイオード。 4. A fluorescent material comprising a yttrium compound is dispersed in at least one of the transparent resin portion and the transparent adhesive, is guided to the lower side of the pedestal emission of blue light emitted from the light emitting diode element passes through the transparent resin section 2. The light emitting diode according to claim 1 , wherein wavelength conversion is performed between white light emission.
に集光レンズ部が突設される請求項１記載の発光ダイオ
ード。 5. The light emitting diode of claim 1, wherein the converging lens part is protruded below the transparent resin portion on the lower surface side of the pedestal.
られた非透過部が、前記発光ダイオード素子の上面全体
に設けられる一対の非透過電極である請求項１記載の発
光ダイオード。Wherein said light emitting non-transmitting portion provided on the upper side of the diode element, the light emitting diode emitting diode according to claim 1, wherein a pair of non-transparent electrode provided on the entire upper surface of the element.
られた非透過部が、透明の樹脂封止体の外周面を被う反
射膜である請求項１記載の発光ダイオード。Wherein said light emitting diode element of the non-transmitting portion provided on the upper side, a reflective film covering the outer peripheral surface of the transparent resin sealing body according to claim 1, wherein the light emitting diode.
られた非透過部が、不透明の樹脂封止体である請求項１
記載の発光ダイオード。8. The non-transmissive portion provided on the upper side of the light emitting diode element, an opaque resin sealing body according to claim 1
A light-emitting diode as described .
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21452799A JP3350484B2 (en) | 1999-07-29 | 1999-07-29 | Light emitting diode |
| US09/787,873 US6396082B1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| KR10-2001-7003802A KR100463653B1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| EP00948262A EP1119058A4 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| CNB008015554A CN1196203C (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| PCT/JP2000/005038 WO2001009963A1 (en) | 1999-07-29 | 2000-07-27 | Light-emitting diode |
| CN00801556A CN1108267C (en) | 1999-07-29 | 2000-08-01 | Transport system with integrated transport carrier and directors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21452799A JP3350484B2 (en) | 1999-07-29 | 1999-07-29 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001044516A JP2001044516A (en) | 2001-02-16 |
| JP3350484B2 true JP3350484B2 (en) | 2002-11-25 |
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ID=16657211
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21452799A Expired - Fee Related JP3350484B2 (en) | 1999-07-29 | 1999-07-29 | Light emitting diode |
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| Country | Link |
|---|---|
| JP (1) | JP3350484B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10034865B4 (en) * | 2000-07-18 | 2006-06-01 | Infineon Technologies Ag | Opto-electronic surface-mountable module |
| JP2002270901A (en) * | 2001-03-12 | 2002-09-20 | Citizen Electronics Co Ltd | Light emitting diode and its manufacturing method |
| JP2002280614A (en) * | 2001-03-14 | 2002-09-27 | Citizen Electronics Co Ltd | Light emitting diode |
| JP4822482B2 (en) * | 2001-05-23 | 2011-11-24 | シチズン電子株式会社 | Light emitting diode and manufacturing method thereof |
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-
1999
- 1999-07-29 JP JP21452799A patent/JP3350484B2/en not_active Expired - Fee Related
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|---|---|
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