JP3798588B2 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
JP3798588B2
JP3798588B2 JP24902099A JP24902099A JP3798588B2 JP 3798588 B2 JP3798588 B2 JP 3798588B2 JP 24902099 A JP24902099 A JP 24902099A JP 24902099 A JP24902099 A JP 24902099A JP 3798588 B2 JP3798588 B2 JP 3798588B2
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emitting diode
light
light emitting
fluorescent material
diode element
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JP2001077429A (en
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孝一 深澤
純二 宮下
康介 土屋
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To simplify the manufacturing process for manufacturing a wavelength conversion type light-emitting diode element. SOLUTION: A fluorescent material-contg. layer 17 is formed at the bottom surface of a sapphire substrate 12, having an n-type semiconductor 13 and a p-type semiconductor 14 grown on the top surface in one body with the substrate 12, so that the fluorescent material-contg. layer 17 can be settled only by mounting a light-emitting diode element 11 in manufacturing a light-emitting diode. This simplifies the manufacturing process of the light-emitting diode.

Description

【０００１】
【発明の属する技術分野】
本発明は、波長変換型の発光ダイオードに関するものである。
【０００２】
【従来の技術】
従来、発光ダイオードの素子としては、例えば窒化ガリウム系化合物半導体からなる青色発光の発光ダイオード素子が知られている。この発光ダイオード素子は、蛍光材とを組合せによって、図４に示すような青色発光を白色系発光に波長変換するタイプの発光ダイオード１に利用されている。この発光ダイオード１では、発光ダイオード素子４がメタルステム２に設けた凹部３に載置され、ボンディングワイヤ６によってメタルポスト５に接続されている。これらの発光ダイオード素子４及びボンディングワイヤ６は、砲弾形の透明樹脂体８によって封止されている。また、前記凹部３内には蛍光材を分散した蛍光材含有樹脂７が発光ダイオード素子４の上方を被うようにして充填されている。このような構成からなる発光ダイオード１にあっては、発光ダイオード素子４から発した青色発光が蛍光材含有樹脂７に分散されている蛍光材に当たって蛍光材を励起し、それによって青色発光を白色系発光に変換するものである。（特開平７−９９３４５号参照）
【０００３】
【発明が解決しようとする課題】
しかしながら、上記のような発光ダイオード素子４にあっては、該素子と蛍光材含有樹脂７とが別体であるため、波長変換型の発光ダイオード１を製造するに際しては、発光ダイオード素子４の接着工程と蛍光材含有樹脂７の充填工程とを別々に設けなければならなかった。
【０００４】
そこで、本発明の目的は、製造工程の簡略化が図られるような波長変換型の発光ダイオードを提供するものである。
【０００５】
【課題を解決するための手段】
上記課題を解決するために、本発明者は、発光ダイオード素子に蛍光材含有層を一体に設けることで製造工程の簡略化を図るようにした。具体的には、請求項１の発明は、透明ガラス基板と、該透明ガラス基板の上面に透明接着剤を介して固着され素子基板が透明である発光ダイオード素子と、該発光ダイオード素子の上面に設けられた非透光性の遮光電極と、前記透明ガラス基板とは別体で形成され、且つ透明ガラス基板の上部外周を囲う枠体と、該枠体に形成された外部接続用電極と、前記枠体の内部に充填された樹脂封止体とを備え、前記発光ダイオード素子が上面に半導体を成長させた素子基板の下面に蛍光材含有層を貼付することで素子基板と一体に形成されてなる発光ダイオードによって、上述した課題を解決した。
【０００６】
この発明によれば、発光ダイオード素子に蛍光材含有層が一体に設けてあるので、発光ダイオードの製造時には発光ダイオード素子を搭載するだけで同時に蛍光材含有層も配置されることになり、従来に比べて発光ダイオードの製造工程を簡略化できる。また、発光ダイオード素子から照射した光が一体形成の蛍光材含有層で波長変換され、そのまま透明ガラス基板を透過するので、信頼性の高い白色発光が得られる。
【０００７】
請求項２の発明は、請求項１に記載の発光ダイオードにおいて、前記素子基板がサファイヤ基板であり、その上面に成長させた半導体が窒化ガリウム系化合物半導体であることを特徴とする。
【０００８】
この発明によれば、透明のサファイヤガラスを用いたことで発光ダイオード素子の下面側への発光が可能となり、さらにこのサファイヤガラスに蛍光材含有層を一体に設けることによって、発光ダイオード素子の下面側にも波長変換させた後の発光が高輝度で得られる。
【０００９】
請求項３の発明は、請求項１に記載の発光ダイオードにおいて、前記素子基板の下面に貼付された蛍光材含有層がイットリウム化合物からなる蛍光材を含有していることを特徴とする。
【００１０】
この発明によれば、サファイヤガラスと一体にイットリウム化合物からなる蛍光材を設けたので、発光ダイオード素子の青色発光を効果的に白色系発光に波長変換することができる。
【００１１】
【発明の実施の形態】
以下、添付図面に基づいて本発明に係る発光ダイオードの実施形態を詳細に説明する。図１乃至図３は本発明の第１の実施形態を示したものであり、図１は発光ダイオード素子の全体構造、図２はこの発光ダイオード素子を用いた表面実装型の発光ダイオードの斜視図、図３は発光ダイオードをマザーボードに実装した状態を示す断面図である。
【００１２】
図１に示したように、発光ダイオード素子１１は窒化ガリウム系化合物半導体からなる青色発光素子であり、透明ガラスであるサファイヤ基板１２の上面にｎ型半導体１３とｐ型半導体１４を成長させた構造である。ｎ型半導体１３及びｐ型半導体１４は、それぞれの上面に電極１５，１６を備えている。この電極１５，１６は、発光ダイオード素子１１の上面側に発光させる場合にはできるだけ小さく形成して発光進路を妨げないようにする一方、サファイヤ基板１２を通して発光ダイオード素子１１の下面側に発光させる場合には上方を遮光するためにできるだけ大きく形成し、ｎ型半導体１３及びｐ型半導体１４の各上面を電極１５，１６で覆い隠すようにする。電極１５，１６は、スパッタリングや真空蒸着によって所望の大きさに形成することができる。
【００１３】
また、この実施形態では上記発光ダイオード素子１１のサファイヤ基板１２の下面に蛍光材含有層１７が一体に形成されている。この蛍光材含有層１７は、無色の透明樹脂の中に適当量の蛍光材１８を均一に分散させたものである。蛍光材１８は、発光ダイオード素子１１の発光エネルギによって励起され短波長の可視光を長波長の可視光に変換するものである。イットリウム化合物からなる蛍光物質を用いた場合には、発光ダイオード素子１１で発光した青色発光を白色系発光に変換することができる。なお無色の透明樹脂として、例えばエポキシ樹脂を利用することができる。
【００１４】
上述の蛍光材含有層１７は、蛍光材１８を分散させた透明樹脂を塗料化し、これを前記サファイヤ基板１２の下面に所望の厚みに印刷するか、若しくは、蛍光材１８を分散させた透明樹脂をシート化し、これをサファイヤ基板１２の下面に貼付することでサファイヤ基板１２と一体に形成することができる。印刷又はシートの貼付は、半導体ウエハの段階で行なってもよく、又は半導体ウエハを分割した個々のチップにしてから行なうこともできる。
【００１５】
従って、上記のような構成からなる発光ダイオード素子１１にあっては、ｎ型半導体１３とｐ型半導体１４との境界面からの発光は、上方、側方及び下方へ青色光として発光するが、特に下方側へ発光した青色光は蛍光材含有層１７の中に分散されている蛍光材１８に当たって蛍光材１８を励起し、それによって長波長の可視光に波長変換する。この時、蛍光材含有層１７の下面に銅箔やアルミ箔など反射率の高い反射膜１９が設けてあると、この反射膜１９によって上方への発光が強くなる。なお、前述したように、発光ダイオード素子１１の上面電極１５，１６が大きい場合には、上方への発光を遮ることで蛍光材含有層１７の下面側を発光させることができる。
【００１６】
図２及び図３は、上記の発光ダイオード素子１１を用いて構成した波長変換型の表面実装型発光ダイオード４１を示したものである。この実施形態に係る表面実装型の発光ダイオード４１は、無色の透明ガラス基板４２の上面に発光ダイオード素子１１を透明接着剤５１で固着し、透明ガラス基板４２の下面側に発光するよう構成したものである。そのため、この実施形態では発光ダイオード素子１１のｎ型半導体１３及びｐ型半導体１４の各上面に設けられる電極も非透光性の遮光電極４３，４４として上面全体に形成される。この遮光電極４３，４４によって、発光ダイオード素子１１からの青色発光は上方側への発光が略完全に遮られ、その大部分が透明のサファイヤ基板１２を透過する。そして、サファイヤ基板１２と一体に形成されている蛍光剤含有層１７を通過する際、発光ダイオード素子１１からの青色発光が可視光の長波長に変換される。
【００１７】
また、この実施形態では発光ダイオード素子１１の外部接続用電極４５，４６が、透明ガラス基板４２の上部外周を四角に囲うプラスチックの枠体４７に形成されている。この枠体４７は、透明ガラス基板４２とは別工程で作られ、発光ダイオード素子１１が搭載された基板上面に接着剤などによって固定される。外部接続用電極４５，４６は、枠体４７の成形時に蒸着などによってパターン形成され、前記発光ダイオード素子１１の各遮光電極４３，４４とボンディングワイヤ４８，４９によって接続されるカソード電極４５ａ及びアノード電極４６ａと、マザーボード接続用電極４５ｂ，４６ｂとを有する。カソード電極４５ａ及びアノード電極４６ａは、枠体４７の一対の内側底面部４７ａに所定幅で設けられ、マザーボード接続用電極４５ｂ，４６ｂは、それと同じ側の縦壁４７ｂの外側面全体に設けられ、両者はプリント電極４５ｃ、４６ｃによって接続されている。
【００１８】
この実施形態では上記枠体４７の内部に樹脂封止体５０が充填される。この充填によって、透明ガラス基板４２の上面に搭載された発光ダイオード素子１１及びボンディングワイヤ４８，４９が封止される。樹脂封止体５０は、無色透明である必要はない。
【００１９】
上述のような構成からなる発光ダイオード４１あっては、発光ダイオード素子１１のｎ型半導体１３とｐ型半導体１４との境界面から上下方向に青色光が発光するが、上方向へ発光した青色光は発光ダイオード素子１１の上面全体に設けられた遮光電極４３，４４によって遮られるために、樹脂封止体５０内への透過が殆どない状態で遮光電極４３，４４の反射を受ける。これらの反射光及び最初からサファイヤ基板１２を透過して下方側に向かう青色発光は、蛍光剤含有層１７及び透明接着剤５１を介して透明ガラス基板４２を透過し、透明ガラス基板４２の下面側を照射する。その際、蛍光剤含有層１７の中に分散されている蛍光材１８が青色発光の短波長によって励起され、青色発光が黄色味がかった長波長の発光に変換される。そして、元々の青色発光と波長変換された黄色発光とが互いに混色することで、透明ガラス基板４２の下面側では白色に近い発光が得られることになる。
【００２０】
次に、上記構成からなる発光ダイオード４１の表面実装方法を説明する。図３は、マザーボード２５に発光ダイオード４１を表面実装した時の状態を示したものである。この実施形態では、前記発光ダイオード４１を上下逆にしてマザーボード２５上に載置し、マザーボード２５上のプリント配線２６，２７に枠体４７の外側面に形成されたマザーボード接続用電極４５ｂ，４６ｂを半田２８で固定する。マザーボード接続用電極４５ｂ，４６ｂは外側面全体に形成されているので、取付け位置の調整が容易であると共に、半田２８による確実な固定が得られる。
【００２１】
上述の実装手段では、発光ダイオード４１が上下逆に実装されるために、マザーボード２５の上面側が発光ダイオード４１によって照射されることになる。その際、蛍光材１８が分散されている蛍光材含有層１７の中で波長変換が行われ、そのまま透明ガラス基板４２を透過していくので、信頼性の優れた高輝度の白色発光が長期間に亘って得られることになる。
【００２２】
上述した実施形態では、発光ダイオード素子と外部接続用電極とをボンディングワイヤによって接続した場合について説明したが、この発明はこれに限定されるものではなく、例えば半田バンプを用いたフリップチップ実装などの接続方法も含まれるものである。また、発光ダイオード素子の上面に遮光電極を形成した場合について説明したが、樹脂封止体を黒色樹脂で形成するなど、発光ダイオード素子の上面側を遮光できるものであれば、上記実施形態のものに限られないのは勿論である。
【００２３】
【発明の効果】
以上説明したように、本発明に係る発光ダイオードによれば、蛍光材含有層が一体に形成された発光ダイオード素子を透明ガラス基板に搭載したので、発光ダイオードの製造工程を簡略化できる。また、発光ダイオード素子から照射した光が一体形成の蛍光材含有層で波長変換され、そのまま透明ガラス基板を透過するので、信頼性の高い白色発光が得られる。さらに、透明ガラス基板の上部外周を囲う枠体に発光ダイオード素子の外部接続用電極を設けているので、マザーボードとの半田による確実な固定が得られる。
【図面の簡単な説明】
【図１】本発明に適用される発光ダイオード素子の断面図である。
【図２】上記発光ダイオード素子を用いた発光ダイオードの第１実施形態を示す斜視図である。
【図３】上記発光ダイオードをマザーボードに実装した時の、上記図２におけるＢ−Ｂ線に沿った断面図である。
【図４】従来における波長変換型の発光ダイオードの一例を示す断面図である。
【符号の説明】
１１ 発光ダイオード素子
１２ サファイヤ基板（素子基板）
１３ ｎ型半導体
１４ ｐ型半導体
１７ 蛍光材含有層
１８ 蛍光材
１９ 反射膜
４１ 発光ダイオード
４２ 透明ガラス基板
４３，４４ 遮光電極（非透光部）
４５，４６ 外部接続用電極
４７ 枠体
５０ 樹脂封止体 [0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wavelength conversion type light emitting diode .
[0002]
[Prior art]
Conventionally, as a light emitting diode element , for example, a blue light emitting diode element made of a gallium nitride compound semiconductor is known . This light emitting diode element is used for a light emitting diode 1 of a type that converts the wavelength of blue light emission to white light emission as shown in FIG. 4 by combining with a fluorescent material . In the light emitting diode 1, a light emitting diode element 4 is placed in a recess 3 provided in a metal stem 2 and connected to a metal post 5 by a bonding wire 6. These light emitting diode elements 4 and bonding wires 6 are sealed with a bullet-shaped transparent resin body 8. The concave portion 3 is filled with a fluorescent material-containing resin 7 in which a fluorescent material is dispersed so as to cover the light emitting diode element 4. In the light-emitting diode 1 having such a configuration, the blue light emitted from the light-emitting diode element 4 strikes the fluorescent material dispersed in the fluorescent material-containing resin 7 to excite the fluorescent material, whereby the blue light emission is converted into a white system. It converts to luminescence. (See JP-A-7-99345)
[0003]
[Problems to be solved by the invention]
However, in the light emitting diode element 4 as described above, since the element and the fluorescent material-containing resin 7 are separate, when the wavelength conversion type light emitting diode 1 is manufactured, the light emitting diode element 4 is bonded. The process and the filling process of the fluorescent material-containing resin 7 had to be provided separately.
[0004]
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wavelength conversion type light emitting diode capable of simplifying the manufacturing process .
[0005]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present inventor tried to simplify the manufacturing process by providing a fluorescent material-containing layer integrally with the light-emitting diode element. Specifically, the invention of claim 1 includes a transparent glass substrate, a light emitting diode element that is fixed to the upper surface of the transparent glass substrate with a transparent adhesive and the element substrate is transparent, and an upper surface of the light emitting diode element. A non-translucent light-shielding electrode provided; and a frame that is formed separately from the transparent glass substrate and surrounds the upper outer periphery of the transparent glass substrate; an external connection electrode formed on the frame; A resin sealing body filled in the frame, and the light emitting diode element is formed integrally with the element substrate by attaching a fluorescent material-containing layer to the lower surface of the element substrate on which the semiconductor is grown on the upper surface. The above-described problem has been solved by the light emitting diode.
[0006]
According to this invention, since the fluorescent material-containing layer is integrally provided in the light-emitting diode element, when the light-emitting diode is manufactured, the fluorescent material-containing layer is also disposed at the same time simply by mounting the light-emitting diode element. In comparison, the manufacturing process of the light emitting diode can be simplified. In addition, the light emitted from the light emitting diode element is wavelength-converted by the integrally formed fluorescent material-containing layer and passes through the transparent glass substrate as it is, so that highly reliable white light emission can be obtained.
[0007]
According to a second aspect of the present invention, in the light-emitting diode according to the first aspect , the element substrate is a sapphire substrate, and the semiconductor grown on the upper surface is a gallium nitride compound semiconductor.
[0008]
According to the present invention, it is possible to emit light to the lower surface side of the light emitting diode element by using the transparent sapphire glass, and furthermore, by providing the fluorescent material-containing layer integrally with the sapphire glass, the lower surface side of the light emitting diode element. In addition, light emission after wavelength conversion can be obtained with high luminance.
[0009]
According to a third aspect of the present invention, in the light-emitting diode according to the first aspect, the fluorescent material-containing layer affixed to the lower surface of the element substrate contains a fluorescent material made of an yttrium compound.
[0010]
According to the present invention, since the fluorescent material made of an yttrium compound is provided integrally with the sapphire glass, the blue light emission of the light emitting diode element can be effectively converted into white light emission.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of a light emitting diode according to the present invention will be described in detail with reference to the accompanying drawings. 1 to 3 show a first embodiment of the present invention. FIG. 1 is an overall structure of a light emitting diode element, and FIG. 2 is a perspective view of a surface mount type light emitting diode using the light emitting diode element. FIG. 3 is a cross-sectional view showing a state in which the light emitting diode is mounted on the mother board.
[0012]
As shown in FIG. 1, the light-emitting diode element 11 is a blue light-emitting element made of a gallium nitride compound semiconductor, and has a structure in which an n-type semiconductor 13 and a p-type semiconductor 14 are grown on the upper surface of a sapphire substrate 12 made of transparent glass. It is. The n-type semiconductor 13 and the p-type semiconductor 14 include electrodes 15 and 16 on their upper surfaces. The electrodes 15 and 16 are formed as small as possible to emit light on the upper surface side of the light emitting diode element 11 so as not to obstruct the light emission path, while emitting light on the lower surface side of the light emitting diode element 11 through the sapphire substrate 12. The upper surface of the n-type semiconductor 13 and the p-type semiconductor 14 is covered with the electrodes 15 and 16 so as to shield the upper part from light. The electrodes 15 and 16 can be formed in a desired size by sputtering or vacuum deposition.
[0013]
In this embodiment, the fluorescent material-containing layer 17 is integrally formed on the lower surface of the sapphire substrate 12 of the light emitting diode element 11. This fluorescent material-containing layer 17 is obtained by uniformly dispersing an appropriate amount of fluorescent material 18 in a colorless transparent resin. The fluorescent material 18 is excited by the light emission energy of the light emitting diode element 11 and converts short-wavelength visible light into long-wavelength visible light. When a fluorescent material made of an yttrium compound is used, the blue light emitted from the light emitting diode element 11 can be converted into white light. As the colorless transparent resin, for example, an epoxy resin can be used.
[0014]
The above-described fluorescent material-containing layer 17 is formed by coating a transparent resin in which the fluorescent material 18 is dispersed and printing it on the lower surface of the sapphire substrate 12 to a desired thickness, or the transparent resin in which the fluorescent material 18 is dispersed. Can be formed integrally with the sapphire substrate 12 by sticking it to the lower surface of the sapphire substrate 12. Printing or sheet sticking may be performed at the stage of the semiconductor wafer, or may be performed after the semiconductor wafer is divided into individual chips.
[0015]
Therefore, in the light emitting diode element 11 having the above-described configuration, light emitted from the boundary surface between the n-type semiconductor 13 and the p-type semiconductor 14 is emitted as blue light upward, sideward, and downward. In particular, blue light emitted downward strikes the fluorescent material 18 dispersed in the fluorescent material-containing layer 17 to excite the fluorescent material 18, thereby converting the wavelength into visible light having a long wavelength. At this time, if a reflective film 19 having a high reflectivity such as a copper foil or an aluminum foil is provided on the lower surface of the fluorescent material-containing layer 17, upward light emission is enhanced by the reflective film 19. As described above, when the upper surface electrodes 15 and 16 of the light emitting diode element 11 are large, the lower surface side of the fluorescent material containing layer 17 can be made to emit light by blocking upward light emission.
[0016]
FIGS. 2 and 3 show a wavelength conversion type surface mount type light emitting diode 41 configured using the light emitting diode element 11 described above . The surface mount type light emitting diode 41 according to this embodiment is configured such that the light emitting diode element 11 is fixed to the upper surface of a colorless transparent glass substrate 42 with a transparent adhesive 51 and emits light on the lower surface side of the transparent glass substrate 42. It is. Therefore, in this embodiment, the electrodes provided on the upper surfaces of the n-type semiconductor 13 and the p-type semiconductor 14 of the light-emitting diode element 11 are also formed on the entire upper surface as non-light-transmissive light-shielding electrodes 43 and 44. By the light shielding electrodes 43 and 44, the blue light emitted from the light emitting diode element 11 is substantially completely blocked from being emitted upward, and most of the light is transmitted through the transparent sapphire substrate 12. Then, when passing through the fluorescent agent-containing layer 17 formed integrally with the sapphire substrate 12, the blue light emission from the light emitting diode element 11 is converted into a long wavelength of visible light.
[0017]
In this embodiment, the external connection electrodes 45 and 46 of the light emitting diode element 11 are formed on a plastic frame 47 that surrounds the upper outer periphery of the transparent glass substrate 42 in a square shape. The frame 47 is made in a separate process from the transparent glass substrate 42 and is fixed to the upper surface of the substrate on which the light emitting diode element 11 is mounted with an adhesive or the like. The external connection electrodes 45 and 46 are patterned by vapor deposition or the like when the frame 47 is formed, and are connected to the light shielding electrodes 43 and 44 of the light emitting diode element 11 by the bonding wires 48 and 49, and the cathode electrode 45a and the anode electrode. 46a and motherboard connection electrodes 45b and 46b. The cathode electrode 45a and the anode electrode 46a are provided with a predetermined width on the pair of inner bottom surface portions 47a of the frame body 47, and the mother board connection electrodes 45b and 46b are provided on the entire outer surface of the vertical wall 47b on the same side, Both are connected by printed electrodes 45c and 46c.
[0018]
In this embodiment, the resin sealing body 50 is filled in the frame 47. By this filling, the light emitting diode element 11 and the bonding wires 48 and 49 mounted on the upper surface of the transparent glass substrate 42 are sealed. The resin sealing body 50 does not need to be colorless and transparent.
[0019]
In the light emitting diode 41 having the above-described configuration, blue light is emitted in the vertical direction from the boundary surface between the n-type semiconductor 13 and the p-type semiconductor 14 of the light emitting diode element 11, but the blue light emitted in the upward direction is emitted. Is shielded by the light shielding electrodes 43 and 44 provided on the entire upper surface of the light emitting diode element 11, and thus is reflected by the light shielding electrodes 43 and 44 with almost no transmission into the resin sealing body 50. The reflected light and the blue light emitted from the beginning through the sapphire substrate 12 toward the lower side are transmitted through the transparent glass substrate 42 through the fluorescent agent-containing layer 17 and the transparent adhesive 51, and the lower surface side of the transparent glass substrate 42. Irradiate. At that time, the fluorescent material 18 dispersed in the fluorescent agent-containing layer 17 is excited by the short wavelength of the blue light emission, and the blue light emission is converted into the long wavelength light emission having a yellowish color. Then, since the original blue light emission and the wavelength-converted yellow light emission are mixed with each other, light emission close to white can be obtained on the lower surface side of the transparent glass substrate 42.
[0020]
Next, a surface mounting method of the light emitting diode 41 having the above configuration will be described. FIG. 3 shows a state when the light emitting diode 41 is surface-mounted on the mother board 25. In this embodiment, the light emitting diode 41 is placed upside down on the mother board 25, and the mother board connection electrodes 45b and 46b formed on the outer surface of the frame 47 on the printed wirings 26 and 27 on the mother board 25. Fix with solder 28. Since the motherboard connection electrodes 45b and 46b are formed on the entire outer surface , the attachment position can be easily adjusted and the solder 28 can be securely fixed.
[0021]
In the mounting means described above, since the light emitting diode 41 is mounted upside down, the upper surface side of the mother board 25 is irradiated by the light emitting diode 41. At that time, the wavelength conversion is performed in the fluorescent material-containing layer 17 in which the fluorescent material 18 is dispersed, and the light is transmitted through the transparent glass substrate 42 as it is. Will be obtained.
[0022]
In the above-described embodiment, the case where the light emitting diode element and the external connection electrode are connected by the bonding wire has been described. However, the present invention is not limited to this, for example, flip chip mounting using a solder bump or the like. A connection method is also included. In addition, the case where the light shielding electrode is formed on the upper surface of the light emitting diode element has been described. Of course, it is not limited to.
[0023]
【The invention's effect】
As described above, according to the light emitting diode according to the present invention, since the light emitting diode element in which the fluorescent material containing layer is integrally formed is mounted on the transparent glass substrate, the manufacturing process of the light emitting diode can be simplified. In addition, the light emitted from the light emitting diode element is wavelength-converted by the integrally formed fluorescent material-containing layer and passes through the transparent glass substrate as it is, so that highly reliable white light emission can be obtained. Furthermore, since the external connection electrodes of the light-emitting diode elements are provided on the frame surrounding the upper outer periphery of the transparent glass substrate, it is possible to reliably fix the light-emitting diode elements to the motherboard.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a light emitting diode element applied to the present invention.
FIG. 2 is a perspective view showing a first embodiment of a light emitting diode using the light emitting diode element.
3 is a cross-sectional view taken along the line BB in FIG. 2 when the light emitting diode is mounted on a mother board.
FIG. 4 is a cross-sectional view showing an example of a conventional wavelength conversion type light emitting diode.
[Explanation of symbols]
11 Light Emitting Diode Element 12 Sapphire Substrate (Element Substrate)
13 n-type semiconductor 14 p-type semiconductor 17 fluorescent material containing layer 18 fluorescent material 19 reflective film
41 Light Emitting Diode
42 Transparent glass substrate
43, 44 Light-shielding electrode (non-translucent part)
45, 46 External connection electrode
47 Frame
50 Resin encapsulant

Claims (3)

透明ガラス基板と、
該透明ガラス基板の上面に透明接着剤を介して固着され素子基板が透明である発光ダイオード素子と、
該発光ダイオード素子の上面に設けられた非透光性の遮光電極と、
前記透明ガラス基板とは別体で形成され、且つ透明ガラス基板の上部外周を囲う枠体と、
該枠体に形成された外部接続用電極と、
前記枠体の内部に充填された樹脂封止体とを備え、
前記発光ダイオード素子が上面に半導体を成長させた素子基板の下面に蛍光材含有層を貼付することで素子基板と一体に形成されてなることを特徴とする発光ダイオード。A transparent glass substrate;
A light-emitting diode element that is fixed to the upper surface of the transparent glass substrate via a transparent adhesive and the element substrate is transparent;
A non-translucent light-shielding electrode provided on the upper surface of the light-emitting diode element;
A frame that is formed separately from the transparent glass substrate and surrounds the upper outer periphery of the transparent glass substrate;
An external connection electrode formed on the frame;
A resin sealing body filled inside the frame,
The light emitting diode, wherein the light emitting diode element is formed integrally with an element substrate by attaching a fluorescent material containing layer to a lower surface of an element substrate having a semiconductor grown on the upper surface. 前記素子基板がサファイヤ基板であり、その上面に成長させた半導体が窒化ガリウム系化合物半導体であることを特徴とする請求項１記載の発光ダイオード。  2. The light emitting diode according to claim 1, wherein the element substrate is a sapphire substrate, and the semiconductor grown on the sapphire substrate is a gallium nitride compound semiconductor. 前記素子基板の下面に貼付された蛍光材含有層がイットリウム化合物からなる蛍光材を含有していることを特徴とする請求項1記載の発光ダイオード。2. The light-emitting diode according to claim 1, wherein the fluorescent material-containing layer attached to the lower surface of the element substrate contains a fluorescent material made of an yttrium compound.
JP24902099A 1999-09-02 1999-09-02 Light emitting diode Expired - Fee Related JP3798588B2 (en)

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JP3785820B2 (en) * 1998-08-03 2006-06-14 豊田合成株式会社 Light emitting device
JP2002314147A (en) * 2001-04-12 2002-10-25 Rohm Co Ltd Method of manufacturing semiconductor light emitting device
JP4704628B2 (en) * 2001-08-31 2011-06-15 アーベル・システムズ株式会社 Light emitting diode
JP4122791B2 (en) * 2002-02-14 2008-07-23 松下電工株式会社 Light emitting device
JP2007088318A (en) * 2005-09-26 2007-04-05 Taiwan Oasis Technology Co Ltd White light-emitting diode and manufacturing process therefor
DE102005046394A1 (en) * 2005-09-28 2007-04-05 Taiwan Oasis Technology Co., Ltd. Multi-wavelength light emitting diode chip for producing e.g. blue light, has two masses with red and green phosphorescence materials, where light of chip is radiated by masses to receive white light by combination of wavelengths of masses
JP2010087292A (en) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Light emitting element
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Publication number Priority date Publication date Assignee Title
KR100990337B1 (en) * 2004-02-19 2010-10-29 홍-유안 테크놀러지 씨오., 엘티디. A fabrication equipment of a light emitting device

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