JP2004111882A - Light emitting apparatus - Google Patents

Light emitting apparatus Download PDF

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Publication number
JP2004111882A
JP2004111882A JP2002276184A JP2002276184A JP2004111882A JP 2004111882 A JP2004111882 A JP 2004111882A JP 2002276184 A JP2002276184 A JP 2002276184A JP 2002276184 A JP2002276184 A JP 2002276184A JP 2004111882 A JP2004111882 A JP 2004111882A
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Japan
Prior art keywords
light
light emitting
phosphor
resin layer
concentration
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Pending
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JP2002276184A
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Japanese (ja)
Inventor
▼高▲橋　祐次
Yuji Takahashi
Shigeru Fukumoto
福本　滋
Katsunori Arakane
荒金　克学
Kenichi Koya
小屋　賢一
Yoshinobu Yamanouchi
山之内　好信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Panasonic Holdings Corp
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Toyoda Gosei Co Ltd
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Toyoda Gosei Co Ltd, Matsushita Electric Industrial Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2002276184A priority Critical patent/JP2004111882A/en
Priority to US10/424,137 priority patent/US6791116B2/en
Priority to KR1020030026923A priority patent/KR100617432B1/en
Priority to TW092110097A priority patent/TW595018B/en
Priority to CN03123081A priority patent/CN1455462A/en
Publication of JP2004111882A publication Critical patent/JP2004111882A/en
Priority to KR1020050086077A priority patent/KR100616053B1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting apparatus even with a tilted side wall capable of obtaining uniform color luminescence on a light emission observing face. <P>SOLUTION: A low concentration resin layer 24 filled with a translucent resin up to an upper face position of a blue LED 17 and a high concentration resin layer 25 filled with a translucent resin on the low concentration resin layer 24 are formed in a cup 12a acting as a reflecting mirror, and a phosphor 27 is mixed in the layers 24, 25 so that the phosphor concentration of the high concentration resin layer 25 is higher than that of the low concentration resin layer 24. Further, the concentration of the phosphor 27 mixed in the layers 24, 25 is distributed in a way that a value multiplying the concentration of the phosphor 27 with an optical path length of the light emitted from the blue LED 17 to reach the upper face of the high concentration resin layer 25 is almost constant. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、発光素子と蛍光体を有して発光する発光装置に関し、例えばＬＥＤディスプレイ、バックライト装置、信号機、照光式スイッチ、各種センサ、各種インジケータ等に適用される発光装置に関する。
【０００２】
【従来の技術】
従来の発光素子と蛍光体を有して発光する発光装置として、例えば先端部分に凹部が形成されたリードフレームを用い、その凹部底面に、発光素子であるＬＥＤを実装し、さらに、そのＬＥＤから発光された光を吸収して他の波長の光に波長変換を行う蛍光体を透明エポキシ樹脂等の樹脂に混入し、この蛍光体混入樹脂を、ＬＥＤを覆って凹部内一杯に充填したものがある。
【０００３】
このような構成の発光装置において、例えばＬＥＤに青色ＬＥＤを用い、蛍光体に青色ＬＥＤからの青色の光を黄色に波長変換する蛍光体を用いれば、双方の色の混色によって、発光観測面で白色を均一に発光させることが可能となる。
【０００４】
しかし、この発光装置においては、青色ＬＥＤの直上方向へ出射される光と、青色ＬＥＤの上面や側面から斜めに出射、或いは出射後に凹部内壁で反射される光とでは、樹脂内を通過する光路長が異なる。光路長が異なると樹脂内での蛍光体の通過量が異なって外部放射に至るため、発光観測面から見た場合、青色ＬＥＤの直上部分が白く、その周囲が黄色に見えると言った色むらが生じる。
【０００５】
特に最近では、発光装置として砲弾型やＳＭＤ（Ｓｕｒｆａｃｅ　Ｍｏｕｎｔｅｄ　Ｄｅｖｉｃｅ）型などの小型化や薄型化のニーズが高く、このような発光装置を実現する場合、ＬＥＤを覆って凹部に充填される樹脂中の蛍光体濃度を高くせざるを得ない。蛍光体を高濃度化した場合、上記の光路長差による蛍光体の通過量の差がより大きくなるので、より色むらが生じることになる。
【０００６】
このような色むらを無くすことが可能な発光装置として特許第３０６５２６３号公報の発光装置がある。この公報の発光装置は、底面にＬＥＤが実装された凹部に、ＬＥＤを覆い且つ発光観測面からみた形状が窪んだ凹球面状の第１の樹脂を充填し、さらに第１の樹脂上に蛍光体が混入された第２の樹脂を充填することによって、上記蛍光体の通過量の差を実質的に低減させ、色むらを低減させるものである。
【０００７】
【発明が解決しようとする課題】
ところで、上述した公報の発光装置においては、蛍光体を含有する第２の樹脂の厚さが、ＬＥＤ直上が最も厚く側壁に向かうに従って薄くなっている。側壁が傾斜している場合、ＬＥＤから出射された後、その傾斜壁で反射され直上へ向かう光は、第２の樹脂の薄い部分を通過するため、蛍光体の通過量が他の部分よりも少なくなる。つまり、蛍光体の通過量に差が生じるので、色むらが生じることになる。言い換えれば、発光観測面において均一な色の発光を得ることができないという問題がある。
【０００８】
本発明は、かかる点に鑑みてなされたものであり、傾斜した側壁を有する発光装置であっても、発光観測面において均一な色の発光を得ることができる発光装置を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記課題を解決するために、本発明の発光装置は、凹状の反射鏡内に固定された窒化物半導体から成る発光素子と、この発光素子で発光された光を吸収し、この吸収した光と異なる波長の光を発光する蛍光体とを有する発光装置において、前記反射鏡内に前記発光素子を覆って透光性樹脂を充填し、この透光性樹脂の全体に前記蛍光体を混入し、この混入された蛍光体の濃度を、前記発光素子で発光された光が前記透光性樹脂の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように分布させたことを特徴としている。
【００１０】
また、本発明の発光装置は、凹状の反射鏡内に固定された窒化物半導体から成る発光素子と、この発光素子で発光された光を吸収し、この吸収した光と異なる波長の光を発光する蛍光体とを有する発光装置において、前記反射鏡内に、前記発光素子の上面位置まで透光性樹脂を充填した第１の樹脂層と、この第１の樹脂層の上に透光性樹脂を充填した第２の樹脂層とを形成し、前記第１および第２の樹脂層に、前記第１の樹脂層よりも前記第２の樹脂層の蛍光体濃度が高くなるように前記蛍光体を混入したことを特徴としている。
【００１１】
また、前記第１および第２の樹脂層に混入された前記蛍光体の濃度を、前記発光素子で発光された光が前記第２の樹脂層の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように分布させたことを特徴としている。
【００１２】
また、前記第１および第２の樹脂層の厚さを、前記発光素子で発光された光が前記第２の樹脂層の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように形成したことを特徴としている。
【００１３】
また、前記第１の樹脂層の上面が、前記発光素子の上面の縁から前記反射鏡の内壁間にあって弧状に窪んだ環状を成していることを特徴としている。
【００１４】
また、前記第１の樹脂層に、光を乱反射する反射剤を混入したことを特徴としている。
【００１５】
また、前記発光素子は、フリップチップ型発光ダイオードであることを特徴としている。
【００１６】
また、前記発光素子は、フェイスアップ型発光ダイオードであり、前記接着剤での固定面に光の反射膜が形成されていることを特徴としている。
【００１７】
前記発光素子は、前記蛍光体が混入された接着剤によって固定されていることを特徴としている。
【００１８】
【発明の実施の形態】
以下、本発明の実施の形態について、図面を参照して詳細に説明する。
【００１９】
（第１の実施の形態）
図１（ａ）は、本発明の第１の実施の形態に係るＬＥＤランプの構成を示す断面図、（ｂ）はＬＥＤランプに用いられた発光素子（ＬＥＤ）からの光の光路長を説明する図である。
【００２０】
この図１（ａ）に示すＬＥＤランプ１０は、砲弾型のものであり、電気的に絶縁された２つのリードフレーム１２，１３の内、一方のリードフレーム１２の先端部分にカップ１２ａを有するメタルステム１４が設けられている。カップ１２ａは、その表面が光を反射する反射鏡となっている。カップ１２ａの底面には、過電圧保護素子１６に青色ＬＥＤ１７をフリップチップ実装したフリップチップ型ＬＥＤが搭載されている。即ち、カップ１２ａの底面に導電性ペーストによるマウント１８で過電圧保護素子１６が固着され、この過電圧保護素子１６の上に、波長４５０〜５５０ｎｍの青色ＬＥＤ１７がフリップチップ実装されている。
【００２１】
青色ＬＥＤ１７の層構成は、図２に示すように、透明基板として例えばサファイア基板１７ａを有し、このサファイア基板１７ａ上に、ＭＯＣＶＤ法等により窒化物半導体層として例えば、バッファ層１７ｂ、ｎ型コンタクト層１７ｃ、ｎ型クラッド層１７ｄ、発光する層を有する層１７ｅ、ｐ型クラッド層１７ｆ、およびｐ型コンタクト層１７ｇを順次形成し、スパッタリング法，真空蒸着法等により、ｐ型コンタクト層１７ｇ上の全面に非透光性光反射電極１７ｈ、非透光性光反射電極１７ｈ上の一部にｐ電極１７ｉ、およびｎ型コンタクト層１７ｃ上の一部にｎ電極１７ｊを形成したものである。
【００２２】
この青色ＬＥＤ１７のフリップチップ実装は、図１に示すように、サファイア基板１７ａの下面を最上面とし、ｐ電極１７ｉを金バンプ１９を介して過電圧保護素子１６のｎ層上の電極１６ａに接続し、ｎ電極１７ｊを金バンプ２０を介して過電圧保護素子１６のｐ層上の電極１６ｂに接続することによって成されている。また、過電圧保護素子１６の電極１６ｂが、ボンディングワイヤ２２によってリードフレーム１３に接続されている。
【００２３】
また、カップ１２ａには、青色ＬＥＤ１７の最上面の位置まで、後述する低濃度樹脂層２４が形成され、この低濃度樹脂層２４上に高濃度樹脂層２５がカップ１２ａに盛り上がるように形成されている。詳細には、青色ＬＥＤ１７の最上面の周囲に環状に形成された低濃度樹脂層２４の上面は、その断面が弧状に窪んだ形状を成している。高濃度樹脂層２５の上面は、青色ＬＥＤ１７の直上位置が最も盛り上がった凸状を成している。
【００２４】
また、低濃度樹脂層２４は、青色ＬＥＤ１７で発光された青色光を吸収して黄色の光を発光する蛍光体２７を低濃度でエポキシ樹脂やシリコーン樹脂等の透光性樹脂に混入したものであり、高濃度樹脂層２５は、蛍光体２７を高濃度で透光性樹脂に混入したものである。蛍光体２７は、Ｃｅ：ＹＡＧ（イットリウム・アルミニウム・ガーネット系蛍光体）から成る。
【００２５】
このような各層２４，２５における蛍光体２７の濃度又は形状は、青色ＬＥＤ１７で発光された光が、高濃度樹脂層２５と外部樹脂２９との界面に至る光路長と、蛍光体２７の濃度を掛けた値がほぼ一定となるように調整されている。
例えば、図１（ｂ）に示す３通りの光路Ａ，Ｂ，Ｃの場合に、光路長×濃度がほぼ一定となっている。但し、（ｂ）において、ｌ１〜ｌ９は光路長、ｄ１は高濃度、ｄ２は低濃度、Ｃ１は弧状部分、Ｃ２は凸状部分を示す。この場合に、青色ＬＥＤ１７の直上方向に出射された光の光路Ａでは、Ａ＝ｌ１×ｄ１となる。また、青色ＬＥＤ１７の側面から出射され、さらにカップ１２ａ側壁で反射された光の光路Ｂでは、Ｂ＝（ｌ２＋ｌ３）ｄ２＋ｌ４×ｄ１となる。さらに、青色ＬＥＤ１７の側面から出射された光が、低濃度樹脂層２４を通過した後、高濃度樹脂層２５の弧状部分を通過し、さらに低濃度樹脂層２４を通過してカップ１２ａの側壁で反射され、この反射光が低濃度樹脂層２４を介して高濃度樹脂層２５を通る光の光路Ｃでは、Ｃ＝（ｌ５＋ｌ７＋ｌ８）ｄ２＋（ｌ６＋ｌ９）ｄ１となる。この場合に、Ａ≒Ｂ≒Ｃの関係となっている。
【００２６】
蛍光体２７が混ざった樹脂を作製する場合、例えば透光性樹脂である主剤・硬化剤を所定の比率にて調合したのち撹拌・脱泡し、この樹脂にアエロジル＋シランカップリング剤を調合して充分に混練することにより作製する。この樹脂で各層２４，２５を形成する場合、例えばカップ１２ａの深さが０．３５ｍｍで、フリップチップ型ＬＥＤの高さが０．２５ｍｍであるとすると、低濃度樹脂層２４の蛍光体２７の濃度を２０％、高濃度樹脂層２５の濃度を６０％とし、各々の硬化時間を１２０℃／１時間として各層２４，２５を形成する。
【００２７】
また、カップ１２ａを有するメタルステム１４の形成されたリードフレーム１２と他方のリードフレーム１３とが、モールド部材である外部樹脂２９で封止されている。外部樹脂２９は、透光性樹脂を砲弾型に固化したものである。
【００２８】
このように構成されたＬＥＤランプ１０において、リードフレーム１２，１３に電圧を印加すると、青色ＬＥＤ１７が青色の光を発光する。この青色の光は、青色ＬＥＤ１７の直上方向へ出射される光と、青色ＬＥＤ１７の上面や側面から斜めに出射、或いは出射後にカップ１２ａ内壁で反射される光とでは、各層２４，２５を通過する光路長が異なる。
【００２９】
しかし、各層２４，２５においては、その光路長×蛍光体２７の濃度がほぼ一定となるように、蛍光体２７の濃度又は各層２４，２５の形状が調整されているので、青色ＬＥＤ１７から上記のように各方向に出射される光が、各層２４，２５の通過途中で蛍光体２７をほぼ同じ量通過する。
【００３０】
例えば、上記光路Ａ，Ｂ，Ｃを、青色ＬＥＤ１７で発光された光が通ることによって、何れの光路Ａ〜Ｃにおいても蛍光体２７の通過量がほぼ同じとなり、各光路における蛍光体２７で波長変換された黄色光が、蛍光体２７を通過しなかった青色光と混色されるので、ＬＥＤランプ１０の発光観測面において均一な白色の発光を得ることができる。
なお、青色ＬＥＤ１７のｐ型コンタクト層１７ｇ上の全面に非透光性光反射電極１７ｈを形成したが、この非透光性光反射電極１７ｈを透光性電極に置き換えることもできる。
【００３１】
（第２の実施の形態）
図３は、本発明の第２の実施の形態に係るＬＥＤランプの構成を示す断面図である。但し、この図３において図１の各部に対応する部分には同一符号を付し、その説明を省略する。
【００３２】
この図３に示すＬＥＤランプ３０は、第１の実施の形態で説明したフリップチップ型ＬＥＤに代え、図２に示した青色ＬＥＤ１７のサファイア基板１７ａの下面に光の反射膜４２ａを形成した青色ＬＥＤ４２を、マウント１８でカップ１２ａの底面にフェイスアップ方式で固着したものである。また、青色ＬＥＤ４２のｐ電極１７ｉとリードフレーム１２が、ボンディングワイヤ２１により接続され、ｎ電極１７ｊとリードフレーム１３が、ボンディングワイヤ２２により接続されている。この青色ＬＥＤ４２では、直下方向へ発光された光は、反射膜４２ａで反射され、直上方向へ放射されるようになっている。
【００３３】
また、カップ１２ａには、青色ＬＥＤ４２の最上面の位置まで、低濃度樹脂層２４が形成され、この低濃度樹脂層２４上に高濃度樹脂層２５がカップ１２ａに盛り上がるように形成されている。
【００３４】
詳細には、青色ＬＥＤ４２の最上面の周囲に環状に形成された低濃度樹脂層２４の上面は、その断面が弧状に窪んだ形状を成している。高濃度樹脂層２５の上面は、青色ＬＥＤ１７の直上位置が最も盛り上がった凸状を成している。このような各層２４，２５における蛍光体２７の濃度と形状は、青色ＬＥＤ４２で発光された光が、高濃度樹脂層２５と外部樹脂２９との界面に至るまでの光路長と、蛍光体２７の濃度を掛けた値がほぼ一定となるように調整されている。
【００３５】
このように構成されたＬＥＤランプ４０においても、第１の実施の形態のＬＥＤランプ１０と同様な効果を奏する。
【００３６】
即ち、リードフレーム１２，１３に電圧を印加すると、青色ＬＥＤ４２が青色の光を発光する。この青色の光は、青色ＬＥＤ４２の直上方向へ出射される光と、青色ＬＥＤ４２の上面や側面から斜めに出射、或いは出射後にカップ１２ａ内壁で反射される光とでは、各層２４，２５を通過する光路長が異なる。
【００３７】
しかし、各層２４，２５においては、その光路長×蛍光体２７の濃度がほぼ一定となるように、蛍光体２７の濃度および各層２４，２５の形状が調整されているので、青色ＬＥＤ４２から上記のように各方向に出射される光が、各層２４，２５の通過途中で蛍光体２７をほぼ同じ量通過する。このような通過により黄色に波長変換された光が、蛍光体２７を通過しなかった青色光と混色されるので、ＬＥＤランプ３０の発光観測面において均一な白色の発光を得ることができる。
【００３８】
（第３の実施の形態）
図４は、本発明の第３の実施の形態に係るＬＥＤランプの構成を示す断面図である。但し、この図４において図３の各部に対応する部分には同一符号を付し、その説明を省略する。
【００３９】
この図４に示すＬＥＤランプ５０は、第２の実施の形態で説明した青色ＬＥＤ４２に代え、図２に示した青色ＬＥＤ１７をマウント１８でカップ１２ａの底面に固着し、マウント１８にＡｇフィラーを含有すると共に、蛍光体２７を混入したものである。つまり、青色ＬＥＤ１７で直下方向へ発光された青色光は、マウント１８中の蛍光体２７で黄色の光に波長変換され、カップ１２ａの底面で直上又は斜め方向へ反射されるようになっている。
【００４０】
従って、第２の実施の形態で説明したと同様な効果を得ることができる他、次のような効果を得ることが可能となる。即ち、直下方向へ発光された青色光が、一旦マウント１８中の蛍光体２７で黄色の光に波長変換され、この変換光が底面で直上又は斜め方向へ反射されるので、その分、蛍光体２７での波長変換を行う必要が無くなり、高濃度樹脂層２５の厚みを薄くすることができる。このように高濃度樹脂層２５の厚みを薄くできれば、特にＳＭＤ型などのＬＥＤランプでは、より薄型化を図ることが可能となる。
【００４１】
以上説明した第１〜第３の実施の形態においては、低濃度樹脂層２４に球状のガラスビーズなどの反射剤を混入させれば、光が乱反射するので、光の均一性を保持することができる。
【００４２】
また、各実施の形態においては、低濃度樹脂層２４と高濃度樹脂層２５との２層に分けたが、層分けを行わず、カップ１２ａを満たした単一の透光性樹脂に、上記の光路長×蛍光体２７の濃度がほぼ一定となるように、蛍光体２７の混入濃度を徐々に変化させた形態としても良い。
【００４３】
【発明の効果】
以上説明したように、本発明によれば、凹状の反射鏡内に透光性の接着剤で固定された発光素子を覆って、その反射鏡に透光性樹脂を充填し、この透光性樹脂の全体に蛍光体を混入し、この混入された蛍光体の濃度を、発光素子で発光された光が透光性樹脂の上面に至る光路長に濃度を掛けた値がほぼ一定となるように分布させたので、発光素子から各方向へ出射される光が透光性樹脂を通過する際にほぼ同じ量の蛍光体を通過する。このような通過により蛍光体で波長変換された光が、蛍光体を通過しなかった青色光と混色されるので、傾斜した側壁を有する発光装置であっても、発光装置の発光観測面において均一な発光を得ることができる。
【図面の簡単な説明】
【図１】（ａ）は、本発明の第１の実施の形態に係るＬＥＤランプの構成を示す断面図、（ｂ）はＬＥＤランプに用いられた発光素子（ＬＥＤ）からの光の光路長を説明する図である。
【図２】上記ＬＥＤランプに用いられる青色ＬＥＤの層構成を示す図である。
【図３】本発明の第２の実施の形態に係るＬＥＤランプの構成を示す断面図である。
【図４】本発明の第３の実施の形態に係るＬＥＤランプの構成を示す断面図である。
【符号の説明】
１０，４０，５０　ＬＥＤランプ
１２，１３　リードフレーム
１２ａ　カップ
１４　メタルステム
１６　過電圧保護素子
１６ａ，１６ｂ　電極
１７，４２　青色ＬＥＤ
１７ａ　サファイア基板
１７ｂ　バッファ層
１７ｃ　ｎ型コンタクト層
１７ｄ　ｎ型クラッド層
１７ｅ　ＭＱＷ活性層
１７ｆ　ｐ型クラッド層
１７ｇ　ｐ型コンタクト層
１７ｈ　ｐ電極
１７ｉ　ｎ電極
１７ｊ　透光性電極
１８　マウント
１９，２０　金バンプ
２１，２２　ボンディングワイヤ
２４　低濃度樹脂層
２５　高濃度樹脂層
２７　蛍光体
２９　外部樹脂
４２ａ　反射膜[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting device having a light emitting element and a phosphor to emit light, and for example, to a light emitting device applied to an LED display, a backlight device, a traffic light, an illuminated switch, various sensors, various indicators, and the like.
[0002]
[Prior art]
As a conventional light emitting device that emits light having a light emitting element and a phosphor, for example, using a lead frame having a concave portion formed at the tip portion, mounting an LED that is a light emitting element on the bottom surface of the concave portion, further from the LED A phosphor that absorbs emitted light and converts the wavelength to light of another wavelength is mixed in a resin such as a transparent epoxy resin, and the phosphor-mixed resin is completely filled in the concave portion covering the LED. is there.
[0003]
In a light emitting device having such a configuration, for example, if a blue LED is used as an LED and a phosphor that converts the wavelength of blue light from the blue LED to yellow is used as the phosphor, a mixed color of both colors causes a light emission observation surface. It is possible to emit white light uniformly.
[0004]
However, in this light emitting device, the light emitted in the direction directly above the blue LED and the light emitted obliquely from the upper surface or side surface of the blue LED or reflected by the inner wall of the concave portion after the emission have an optical path passing through the resin. Lengths are different. If the optical path length is different, the amount of phosphor passing through the resin will be different, leading to external radiation, so when viewed from the light emission observation surface, the color directly above the blue LED is white and the surrounding area looks yellow. Occurs.
[0005]
In particular, recently, there is a strong need for miniaturization and thinning of a light emitting device such as a shell type or an SMD (Surface Mounted Device) type. In order to realize such a light emitting device, a resin filled in a concave portion covering an LED is required. The phosphor concentration must be increased. When the concentration of the fluorescent material is increased, the difference in the amount of light passing through the fluorescent material due to the difference in the optical path length becomes larger, so that more color unevenness occurs.
[0006]
As a light emitting device capable of eliminating such color unevenness, there is a light emitting device disclosed in Japanese Patent No. 3065263. In the light emitting device of this publication, a concave portion in which an LED is mounted on the bottom surface is filled with a first resin having a concave spherical shape that covers the LED and has a concave shape as viewed from a light emission observation surface, and further has a fluorescent material on the first resin. By filling the second resin into which the body is mixed, the difference in the amount of light passing through the phosphor is substantially reduced, and the color unevenness is reduced.
[0007]
[Problems to be solved by the invention]
By the way, in the light emitting device of the above-mentioned publication, the thickness of the second resin containing the phosphor is thickest immediately above the LED and becomes thinner toward the side wall. When the side wall is inclined, after the light is emitted from the LED, the light reflected by the inclined wall and traveling directly upward passes through the thin portion of the second resin, so that the amount of the phosphor passing therethrough is smaller than that of the other portions. Less. In other words, a difference occurs in the amount of light passing through the phosphor, so that color unevenness occurs. In other words, there is a problem that light emission of a uniform color cannot be obtained on the light emission observation surface.
[0008]
The present invention has been made in view of such a point, and an object of the present invention is to provide a light emitting device that can obtain uniform color light emission on a light emission observation surface even in a light emitting device having inclined side walls. I do.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, a light emitting device according to the present invention includes a light emitting element made of a nitride semiconductor fixed in a concave reflecting mirror, and light absorbed by the light emitting element. In a light-emitting device having a phosphor that emits light of different wavelengths, a light-transmitting resin is filled in the reflector to cover the light-emitting element, and the phosphor is mixed into the entire light-transmitting resin, The concentration of the mixed phosphor is distributed such that a value obtained by multiplying an optical path length of light emitted from the light emitting element to an upper surface of the translucent resin by the concentration is substantially constant. And
[0010]
In addition, the light emitting device of the present invention includes a light emitting element made of a nitride semiconductor fixed in a concave reflecting mirror, absorbing light emitted by the light emitting element, and emitting light having a different wavelength from the absorbed light. A first resin layer in which the reflecting mirror is filled with a translucent resin up to the upper surface of the light emitting element, and a translucent resin on the first resin layer. And a second resin layer filled with the first and second resin layers. The first and second resin layers are formed such that the phosphor concentration of the second resin layer is higher than that of the first resin layer. Is mixed.
[0011]
In addition, the concentration of the phosphor mixed in the first and second resin layers is a value obtained by multiplying the optical path length of light emitted from the light emitting element to the upper surface of the second resin layer by the concentration. Are distributed so as to be substantially constant.
[0012]
Further, the thickness of the first and second resin layers is adjusted so that a value obtained by multiplying the optical path length of light emitted by the light emitting element to the upper surface of the second resin layer by the concentration is substantially constant. It is characterized by being formed in.
[0013]
Also, the upper surface of the first resin layer is formed in an annular shape depressed in an arc from the edge of the upper surface of the light emitting element to the space between the inner walls of the reflecting mirror.
[0014]
Further, a reflection agent for irregularly reflecting light is mixed into the first resin layer.
[0015]
Further, the light-emitting element is a flip-chip type light-emitting diode.
[0016]
Further, the light-emitting element is a face-up type light-emitting diode, and a light reflection film is formed on a surface fixed with the adhesive.
[0017]
The light emitting element is characterized by being fixed by an adhesive mixed with the phosphor.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0019]
(First Embodiment)
FIG. 1A is a cross-sectional view illustrating a configuration of an LED lamp according to a first embodiment of the present invention, and FIG. 1B illustrates an optical path length of light from a light emitting element (LED) used in the LED lamp. FIG.
[0020]
The LED lamp 10 shown in FIG. 1A is of a shell type, and is a metal having a cup 12a at the tip of one of the two electrically insulated lead frames 12, 13. A stem 14 is provided. The surface of the cup 12a is a reflecting mirror that reflects light. A flip-chip type LED in which a blue LED 17 is flip-chip mounted on the overvoltage protection element 16 is mounted on the bottom surface of the cup 12a. That is, the overvoltage protection element 16 is fixed to the bottom surface of the cup 12a by a mount 18 made of a conductive paste, and the blue LED 17 having a wavelength of 450 to 550 nm is flip-chip mounted on the overvoltage protection element 16.
[0021]
As shown in FIG. 2, the layer configuration of the blue LED 17 includes, for example, a sapphire substrate 17a as a transparent substrate, and on the sapphire substrate 17a, as a nitride semiconductor layer by MOCVD or the like, for example, a buffer layer 17b, an n-type contact. A layer 17c, an n-type cladding layer 17d, a layer 17e having a light emitting layer, a p-type cladding layer 17f, and a p-type contact layer 17g are sequentially formed, and are formed on the p-type contact layer 17g by a sputtering method, a vacuum deposition method, or the like. A non-light-transmitting light reflecting electrode 17h is formed on the entire surface, a p-electrode 17i is formed on a part of the non-light-transmitting light reflecting electrode 17h, and an n-electrode 17j is formed on a part of the n-type contact layer 17c.
[0022]
In the flip-chip mounting of the blue LED 17, as shown in FIG. 1, the lower surface of the sapphire substrate 17a is the uppermost surface, and the p-electrode 17i is connected to the electrode 16a on the n-layer of the overvoltage protection element 16 via the gold bump 19. , And the n-electrode 17j is connected to the electrode 16b on the p-layer of the overvoltage protection element 16 via the gold bump 20. The electrode 16b of the overvoltage protection element 16 is connected to the lead frame 13 by a bonding wire 22.
[0023]
Further, a low-concentration resin layer 24 described later is formed on the cup 12a up to the position of the uppermost surface of the blue LED 17, and a high-concentration resin layer 25 is formed on the low-concentration resin layer 24 so as to swell on the cup 12a. I have. More specifically, the upper surface of the low-concentration resin layer 24 formed in an annular shape around the uppermost surface of the blue LED 17 has a cross-sectionally concave shape. The upper surface of the high-concentration resin layer 25 has a convex shape in which the position immediately above the blue LED 17 is the highest.
[0024]
The low-concentration resin layer 24 is formed by mixing a phosphor 27 that absorbs blue light emitted by the blue LED 17 and emits yellow light at a low concentration into a translucent resin such as an epoxy resin or a silicone resin. The high-concentration resin layer 25 is obtained by mixing the phosphor 27 with a high concentration in a translucent resin. The phosphor 27 is made of Ce: YAG (a yttrium aluminum garnet phosphor).
[0025]
The concentration or shape of the phosphor 27 in each of the layers 24 and 25 is determined by the light path length of light emitted from the blue LED 17 reaching the interface between the high-concentration resin layer 25 and the external resin 29 and the concentration of the phosphor 27. The multiplied value is adjusted to be substantially constant.
For example, in the case of three optical paths A, B, and C shown in FIG. 1B, the optical path length × density is substantially constant. However, in (b), l 1 to l 9 indicate an optical path length, d 1 indicates a high density, d 2 indicates a low density, C 1 indicates an arc portion, and C 2 indicates a convex portion. In this case, the optical path A of the light emitted directly upward blue LED 17, the A = l 1 × d 1. In the optical path B of the light emitted from the side surface of the blue LED 17 and further reflected on the side wall of the cup 12a, B = (l 2 + l 3 ) d 2 + l 4 × d 1 . Further, the light emitted from the side surface of the blue LED 17 passes through the low-concentration resin layer 24, then passes through the arc-shaped portion of the high-concentration resin layer 25, passes through the low-concentration resin layer 24, and passes through the side wall of the cup 12a. is reflected, the optical path C of the light the reflected light passing through the high density resin layer 25 via the low density resin layer 24, C = (l 5 + l 7 + l 8) d 2 + (l 6 + l 9) d 1 and Become. In this case, the relationship is A ≒ B ≒ C.
[0026]
In the case of preparing a resin mixed with the phosphor 27, for example, a base material and a curing agent, which are light-transmissive resins, are mixed at a predetermined ratio, then stirred and defoamed, and Aerosil + silane coupling agent is mixed with the resin. It is prepared by sufficiently kneading. When the layers 24 and 25 are formed of this resin, for example, assuming that the depth of the cup 12a is 0.35 mm and the height of the flip-chip type LED is 0.25 mm, the phosphor 27 of the low concentration resin layer 24 is formed. The layers 24 and 25 are formed by setting the concentration to 20% and the concentration of the high-concentration resin layer 25 to 60%, and setting each curing time to 120 ° C./1 hour.
[0027]
Further, the lead frame 12 on which the metal stem 14 having the cup 12a is formed and the other lead frame 13 are sealed with an external resin 29 which is a mold member. The external resin 29 is obtained by solidifying a translucent resin into a shell shape.
[0028]
In the LED lamp 10 configured as described above, when a voltage is applied to the lead frames 12 and 13, the blue LED 17 emits blue light. The blue light passes through the layers 24 and 25 between the light emitted directly above the blue LED 17 and the light emitted obliquely from the upper surface or side surface of the blue LED 17 or reflected by the inner wall of the cup 12a after the emission. The optical path length is different.
[0029]
However, in each of the layers 24 and 25, the concentration of the phosphor 27 or the shape of each of the layers 24 and 25 is adjusted so that the optical path length × the concentration of the phosphor 27 becomes substantially constant. As described above, the light emitted in each direction passes through the phosphor 27 almost in the same amount in the course of passing through the layers 24 and 25.
[0030]
For example, when light emitted from the blue LED 17 passes through the optical paths A, B, and C, the amount of light passing through the phosphor 27 becomes substantially the same in any of the optical paths A to C. Since the converted yellow light is mixed with blue light that has not passed through the phosphor 27, uniform white light emission can be obtained on the light emission observation surface of the LED lamp 10.
Although the non-light-transmitting light reflecting electrode 17h is formed on the entire surface of the blue LED 17 on the p-type contact layer 17g, the non-light-transmitting light reflecting electrode 17h can be replaced with a light-transmitting electrode.
[0031]
(Second embodiment)
FIG. 3 is a sectional view showing the configuration of the LED lamp according to the second embodiment of the present invention. However, in FIG. 3, portions corresponding to the respective portions in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
[0032]
The LED lamp 30 shown in FIG. 3 is different from the flip-chip type LED described in the first embodiment in that a blue LED 42 having a light reflection film 42a formed on the lower surface of a sapphire substrate 17a of the blue LED 17 shown in FIG. Is fixed to the bottom surface of the cup 12a by a mount 18 in a face-up manner. The p-electrode 17i of the blue LED 42 and the lead frame 12 are connected by a bonding wire 21, and the n-electrode 17j and the lead frame 13 are connected by a bonding wire 22. In the blue LED 42, the light emitted in the downward direction is reflected by the reflection film 42a and emitted in the upward direction.
[0033]
Further, a low-concentration resin layer 24 is formed on the cup 12a up to the uppermost position of the blue LED 42, and a high-concentration resin layer 25 is formed on the low-concentration resin layer 24 so as to swell on the cup 12a.
[0034]
More specifically, the upper surface of the low-concentration resin layer 24 formed in an annular shape around the uppermost surface of the blue LED 42 has an arcuate cross section. The upper surface of the high-concentration resin layer 25 has a convex shape in which the position immediately above the blue LED 17 is the highest. The concentration and shape of the phosphor 27 in each of the layers 24 and 25 are determined by the light path length from the light emitted by the blue LED 42 to the interface between the high-concentration resin layer 25 and the external resin 29, and the shape of the phosphor 27. It is adjusted so that the value obtained by multiplying the density is substantially constant.
[0035]
The LED lamp 40 configured as described above has the same effect as the LED lamp 10 of the first embodiment.
[0036]
That is, when a voltage is applied to the lead frames 12 and 13, the blue LED 42 emits blue light. This blue light passes through the layers 24 and 25 between the light emitted directly above the blue LED 42 and the light emitted obliquely from the upper surface or side surface of the blue LED 42 or reflected by the inner wall of the cup 12a after the emission. The optical path length is different.
[0037]
However, in each of the layers 24 and 25, the concentration of the phosphor 27 and the shape of each of the layers 24 and 25 are adjusted so that the optical path length × the concentration of the phosphor 27 is substantially constant. As described above, the light emitted in each direction passes through the phosphor 27 almost in the same amount in the course of passing through the layers 24 and 25. The light whose wavelength has been converted into yellow by such passage is mixed with blue light that has not passed through the phosphor 27, so that uniform white light emission can be obtained on the emission observation surface of the LED lamp 30.
[0038]
(Third embodiment)
FIG. 4 is a sectional view showing the configuration of the LED lamp according to the third embodiment of the present invention. However, in FIG. 4, portions corresponding to the respective portions in FIG. 3 are denoted by the same reference numerals, and description thereof will be omitted.
[0039]
In the LED lamp 50 shown in FIG. 4, the blue LED 17 shown in FIG. 2 is fixed to the bottom surface of the cup 12a by the mount 18 instead of the blue LED 42 described in the second embodiment, and the mount 18 contains an Ag filler. In addition, the phosphor 27 is mixed. That is, the blue light emitted by the blue LED 17 in the downward direction is converted into a yellow light by the phosphor 27 in the mount 18 and is reflected on the bottom surface of the cup 12a in the upward or oblique direction.
[0040]
Therefore, in addition to the same effects as described in the second embodiment, the following effects can be obtained. That is, the blue light emitted in the downward direction is once converted to yellow light by the phosphor 27 in the mount 18 and the converted light is reflected right above or obliquely on the bottom surface. There is no need to perform the wavelength conversion at 27, and the thickness of the high-concentration resin layer 25 can be reduced. If the thickness of the high-concentration resin layer 25 can be reduced in this way, it is possible to further reduce the thickness of the LED lamp, particularly of the SMD type.
[0041]
In the first to third embodiments described above, if a reflective agent such as spherical glass beads is mixed into the low-concentration resin layer 24, light is irregularly reflected, so that uniformity of light can be maintained. it can.
[0042]
In each embodiment, the light-transmitting resin layer 24 is divided into the low-concentration resin layer 24 and the high-concentration resin layer 25, but the single light-transmitting resin filling the cup 12a is not divided. A configuration in which the mixed concentration of the phosphor 27 is gradually changed so that the optical path length × the concentration of the phosphor 27 is substantially constant may be adopted.
[0043]
【The invention's effect】
As described above, according to the present invention, the light-emitting element fixed in the concave reflecting mirror with the light-transmitting adhesive is covered, and the reflecting mirror is filled with the light-transmitting resin. A phosphor is mixed into the entire resin, and the value obtained by multiplying the concentration of the mixed phosphor by the optical path length of the light emitted by the light emitting element to the upper surface of the translucent resin is substantially constant. , Light emitted in each direction from the light emitting element passes through the same amount of phosphor when passing through the translucent resin. Light that has been wavelength-converted by the phosphor due to such passage is mixed with blue light that has not passed through the phosphor, so that even in a light-emitting device having inclined side walls, the light is uniformly observed on the light emission observation surface of the light-emitting device. Light emission can be obtained.
[Brief description of the drawings]
FIG. 1A is a cross-sectional view illustrating a configuration of an LED lamp according to a first embodiment of the present invention, and FIG. 1B is an optical path length of light from a light emitting element (LED) used in the LED lamp. FIG.
FIG. 2 is a diagram showing a layer structure of a blue LED used for the LED lamp.
FIG. 3 is a cross-sectional view illustrating a configuration of an LED lamp according to a second embodiment of the present invention.
FIG. 4 is a sectional view showing a configuration of an LED lamp according to a third embodiment of the present invention.
[Explanation of symbols]
10, 40, 50 LED lamp 12, 13 Lead frame 12a Cup 14 Metal stem 16 Overvoltage protection element 16a, 16b Electrode 17, 42 Blue LED
17a sapphire substrate 17b buffer layer 17c n-type contact layer 17d n-type cladding layer 17e MQW active layer 17f p-type cladding layer 17g p-type contact layer 17h p-electrode 17in n-electrode 17j translucent electrode 18 mount 19, 20 gold bump 21, 22 Bonding wire 24 Low concentration resin layer 25 High concentration resin layer 27 Phosphor 29 External resin 42a Reflective film

Claims (9)

凹状の反射鏡内に固定された窒化物半導体から成る発光素子と、この発光素子で発光された光を吸収し、この吸収した光と異なる波長の光を発光する蛍光体とを有する発光装置において、
前記反射鏡内に前記発光素子を覆って透光性樹脂を充填し、この透光性樹脂の全体に前記蛍光体を混入し、この混入された蛍光体の濃度を、前記発光素子で発光された光が前記透光性樹脂の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように分布させた
ことを特徴とする発光装置。In a light emitting device having a light emitting element made of a nitride semiconductor fixed in a concave reflecting mirror and a phosphor that absorbs light emitted by the light emitting element and emits light of a different wavelength from the absorbed light ,
The reflector is filled with a light-transmitting resin covering the light-emitting element, the phosphor is mixed into the entire light-transmitting resin, and the concentration of the mixed phosphor is emitted by the light-emitting element. A light emitting device characterized in that the light is distributed such that a value obtained by multiplying an optical path length of the light that reaches the upper surface of the translucent resin by the concentration becomes substantially constant. 凹状の反射鏡内に固定された窒化物半導体から成る発光素子と、この発光素子で発光された光を吸収し、この吸収した光と異なる波長の光を発光する蛍光体とを有する発光装置において、
前記反射鏡内に、前記発光素子の上面位置まで透光性樹脂を充填した第１の樹脂層と、この第１の樹脂層の上に透光性樹脂を充填した第２の樹脂層とを形成し、前記第１および第２の樹脂層に、前記第１の樹脂層よりも前記第２の樹脂層の蛍光体濃度が高くなるように前記蛍光体を混入した
ことを特徴とする発光装置。In a light emitting device having a light emitting element made of a nitride semiconductor fixed in a concave reflecting mirror and a phosphor that absorbs light emitted by the light emitting element and emits light of a different wavelength from the absorbed light ,
A first resin layer filled with a translucent resin up to the upper surface position of the light emitting element and a second resin layer filled with a translucent resin on the first resin layer are provided in the reflector. A light emitting device, wherein the phosphor is mixed into the first and second resin layers such that the phosphor concentration of the second resin layer is higher than that of the first resin layer. . 前記第１および第２の樹脂層に混入された前記蛍光体の濃度を、前記発光素子で発光された光が前記第２の樹脂層の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように分布させた
ことを特徴とする請求項２に記載の発光装置。The concentration of the phosphor mixed in the first and second resin layers is substantially equal to the value obtained by multiplying the optical path length of light emitted by the light emitting element to the upper surface of the second resin layer by the concentration. The light emitting device according to claim 2, wherein the light emitting device is distributed so as to be constant. 前記第１および第２の樹脂層の厚さを、前記発光素子で発光された光が前記第２の樹脂層の上面に至る光路長に前記濃度を掛けた値がほぼ一定となるように形成した
ことを特徴とする請求項２に記載の発光装置。The thicknesses of the first and second resin layers are formed such that a value obtained by multiplying an optical path length of light emitted by the light emitting element to an upper surface of the second resin layer by the concentration is substantially constant. The light emitting device according to claim 2, wherein: 前記第１の樹脂層の上面が、前記発光素子の上面の縁から前記反射鏡の内壁間にあって弧状に窪んだ環状を成している
ことを特徴とする請求項２に記載の発光装置。The light emitting device according to claim 2, wherein an upper surface of the first resin layer has an annular shape depressed in an arc shape between the inner wall of the reflector and an edge of the upper surface of the light emitting element. 前記第１の樹脂層に、光を乱反射する反射剤を混入した
ことを特徴とする請求項２に記載の発光装置。The light emitting device according to claim 2, wherein a reflective agent that irregularly reflects light is mixed into the first resin layer. 前記発光素子は、フリップチップ型発光ダイオードである
ことを特徴とする請求項１から請求項５のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein the light emitting element is a flip-chip type light emitting diode. 前記発光素子は、フェイスアップ型発光ダイオードであり、前記接着剤での固定面に光の反射膜が形成されている
ことを特徴とする請求項１から請求項５のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein the light emitting element is a face-up type light emitting diode, and a light reflection film is formed on a surface fixed with the adhesive. . 前記発光素子は、前記蛍光体が混入された接着剤によって固定されていることを特徴とする請求項１または２に記載の発光装置。The light emitting device according to claim 1, wherein the light emitting element is fixed by an adhesive in which the phosphor is mixed.
JP2002276184A 2002-04-30 2002-09-20 Light emitting apparatus Pending JP2004111882A (en)

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US10/424,137 US6791116B2 (en) 2002-04-30 2003-04-28 Light emitting diode
KR1020030026923A KR100617432B1 (en) 2002-04-30 2003-04-29 Light emitting diode
TW092110097A TW595018B (en) 2002-04-30 2003-04-29 Light emitting diode
CN03123081A CN1455462A (en) 2002-04-30 2003-04-30 Luminous diode
KR1020050086077A KR100616053B1 (en) 2002-04-30 2005-09-15 Light emitting diode

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