JP2004266148A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device wherein the brightness can be enhanced by preventing increase in the size of a light source and reducing the absorption loss of light, and condensed light can be emitted in a desired direction and range. <P>SOLUTION: An element housing part 50 is provided at an external lens 5, and a phosphor layer 5A is thinly provided on the inner peripheral surface of an element housing part 50 so as to integrally surround an LED element 4. Thus, the phosphor layer 5A can equally and thinly be formed. Since the phosphor layer 5A with uniform thickness can be formed, lowering of the brightness due to light absorption is prevented. Since increase in the size of the light source due to the thickness of the phosphor layer 5A can be minimized, the light can be condensed in the state of a spot by a condensing optical system to enhance the brightness in a prescribed emitting range. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light-emitting device that absorbs light emitted from a light-emitting diode (hereinafter, referred to as an “LED”) with a phosphor, converts the light into light of a different wavelength, and emits the light. The present invention relates to a light emitting device which is large and has excellent light collecting properties.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, there is a light emitting device that converts the wavelength of light emitted from an LED chip with a phosphor and emits the light (for example, see Patent Document 1).
[0003]
FIG. 9 shows a light emitting device disclosed in Patent Document 1, and FIG. 9A is a longitudinal sectional view. The light emitting device 10 electrically connects the lead frames 11A and 11B, the cup 12 formed in the lead frame 11A, the LED 13 held in the cup 12, the electrode portion of the LED 13 and the lead frames 11A and 11B. And a sealing portion 15 for sealing the LED 13 provided in the cup 12 and a bullet-shaped epoxy resin 16 having light transmissivity and sealing the whole.
[0004]
FIG. 9B shows a partially enlarged view of the cup 12. The LED 13 is sealed by a transparent spacer 15A, and a fluorescent material 15B is provided in a layer on the surface of the transparent spacer 15A.
[0005]
According to such a configuration, uniform and uniform white light can be obtained by uniformly illuminating the fluorescent material 15B.
[0006]
FIG. 10 partially shows another configuration of the light emitting device disclosed in Patent Document 1. In this configuration, the LED 13 mounted on the substrate 17 by the transparent spacer 15A formed by dropping the ultraviolet curable resin onto the LED 13 and the fluorescent material 15B formed in a layer by dropping on the surface of the transparent spacer 15A. Are hemispherically sealed.
[0007]
[Patent Document 1]
JP-A-2000-077723 (FIGS. 1, 3 and 4)
[0008]
[Problems to be solved by the invention]
However, according to the conventional light emitting device, since a resin or a fluorescent material is dropped around the LED, there is a problem that the sealing shape and the thickness cannot be accurately provided. Further, when the LED is sealed in a hemispherical shape with a resin, there is also a disadvantage that the dropped fluorescent material flows around the resin and accumulates, and light is absorbed in that portion, thereby lowering light extraction efficiency. is there.
[0009]
Further, in FIG. 9B, since the fluorescent material 15B emits light, the light emission area becomes about 10 times, and there is a problem that it is difficult to obtain the light collecting effect by the light collecting optical system. That is, as shown in FIG. 11A, when the light emitted from the light source 19 is condensed by the condensing optical system 18, the light emitting area of the light source 19 is small, and when the light can be regarded as a point light source, the light L is sufficiently collected. Is lighted. On the other hand, as shown in FIG. 11B, if the light emitting area of the light source 19 is large, sufficient light cannot be condensed.
[0010]
Accordingly, an object of the present invention is to provide a light-emitting device that can increase the luminous intensity by preventing light source size from increasing and reducing light absorption loss, and can irradiate light collected in a desired direction and range. Is to provide.
[0011]
[Means for Solving the Problems]
The present invention, in order to achieve the above object, a semiconductor light emitting element portion that emits light of a predetermined wavelength,
A light transmitting portion having a space formed integrally with the semiconductor light emitting element portion and formed of a light transmitting material that transmits the light and accommodating the semiconductor light emitting element portion;
A phosphor portion formed in a thin layer along the shape of the space and excited upon irradiation with the light.
[0012]
The light transmitting portion may have a condensing optical shape for condensing light. Further, as the semiconductor light emitting element portion, a flip chip type LED element that emits light from a light emitting surface provided on a side opposite to the mounting surface can be used.
[0013]
It is preferable that the space covering the semiconductor light emitting element is provided close to the outer shape of the semiconductor light emitting element. Further, the semiconductor light emitting element portion may be formed by regularly arranging a plurality of LED elements, or may be formed by regularly arranging a plurality of LED elements having different emission wavelengths.
[0014]
According to such a configuration, by disposing the phosphor section with a uniform thickness in the vicinity of the semiconductor light emitting element section, it is possible to suppress an increase in apparent light source size due to excitation light emission of the phosphor. The amount of light absorption is reduced.
[0015]
In order to achieve the above object, the present invention provides a first step of forming an electrode with a metal material,
A second step of mounting a semiconductor light emitting element on the electrode;
A third step of positioning a light transmitting section having a phosphor layer formed in a thin layer along the shape of an element housing section for housing the semiconductor light emitting element with respect to the electrode;
A fourth step of bonding and fixing the light transmitting section and the electrode so that the semiconductor light emitting element is surrounded by the phosphor layer of the element accommodating section. provide.
[0016]
It is preferable that the phosphor layer is formed in the element accommodating portion by spraying a phosphor material after molding the light transmitting resin.
[0017]
As the electrode, a lead-shaped electrode provided on the surface of a submount material having high thermal conductivity or a copper foil electrode provided on a surface of a base material having high thermal conductivity via an insulating layer can be used. Preferably, the semiconductor light emitting element is flip-chip bonded to the electrode.
[0018]
According to such a configuration, the light transmitting section can be manufactured in a separate process, so that the productivity is excellent, and the phosphor section having a uniform thickness is precisely arranged near the semiconductor light emitting element section.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1A and 1B show a light emitting device according to a first embodiment of the present invention, wherein FIG. 1A is a longitudinal sectional view, FIG. 1B is a partially enlarged view of an LED element, and FIG. 2 shows a cross section.
[0020]
In the following description, as the definition of light collection, in addition to light collection in the form of a spot in the optical axis direction, light collection in a direction orthogonal to the optical axis or a direction having a predetermined angle with respect to the optical axis It is assumed that light collection to the light source is also included.
[0021]
As shown in FIG. 1A, the light emitting device 1 is provided with leads 2A and 2B formed of a metal material having excellent thermal conductivity such as copper, and provided on the element mounting side of the leads 2A and 2B and has a surface. A submount 3 having wiring patterns 3A and 3B, an LED element 4 mounted on the wiring patterns 3A and 3B, and a lens 5 externally fixed to the leads 2A and 2B so as to surround the LED element 4; Having.
[0022]
The submount 3 is formed of a high thermal conductive material such as AlN, and the LED element 4 is flip-chip bonded to the copper foil wiring patterns 3A and 3B formed on the surface via the bumps 4A. The wiring pattern 3A is electrically connected to the lead 2A, and the wiring pattern 3B is electrically connected to the lead 2B via a via hole (not shown).
[0023]
The LED element 4 is formed of, for example, a gallium nitride-based compound semiconductor such as GaN, GaAlN, InGaN, and InGaAlN, or ZnSe (zinc selenide) or the like so as to emit blue light of 450 nm to 480 nm. The LED element 4 mainly emits light from the sapphire substrate side formed on the side opposite to the electrode forming surface, and has a chip size of 1000 × 1000 μm. Since the element structure of the blue LED is a well-known technology, a detailed description thereof will be omitted.
[0024]
The lens 5 is formed in a shell shape by injection molding a light transmitting resin such as an epoxy resin, and is positioned and fixed at a predetermined position with respect to the leads 2A and 2B on which the LED elements 4 are mounted. ing. Although not shown, this positioning is performed based on the concave-convex fitting of the concave portions formed on the leads 2A and 2B and the convex portions formed on the lens 5. In addition, you may make it fix with a high positional accuracy by another positioning method.
[0025]
Further, as shown in FIG. 1B, the lens 5 has a recessed element housing portion 50 for housing the LED element 4 when positioning and fixing to the leads 2A and 2B. Is provided with a phosphor layer 5A formed in a thin layer. As shown in FIG. 1C, the element accommodating portion 50 is formed in such a size that a gap 5B formed between the element accommodating portion 50 and the LED element 4 is as small as possible. The phosphor layer 5A is made of Ce: YAG (yttrium aluminum garnet) that emits yellow light when excited by the blue light having the above-described wavelength.
[0026]
To manufacture such a light emitting device 1, first, leads 2A and 2B are formed by punching a metal material. Further, indentations are formed in the positioning recesses during punching of the leads 2A and 2B. Next, the submount 3 is formed on the element mounting side of the leads 2A and 2B using a high thermal conductive material. Next, predetermined circuit patterns 3A and 3B made of copper foil are formed on the surface of the submount 3. Next, the LED elements 4 are flip-chip bonded to predetermined positions of the circuit patterns 3A and 3B via the bumps 4A.
[0027]
The lens 5 is formed in another process. First, a lens corresponding to a lens shape and having a light-transmissive resin filled with a light-transmitting resin is injection-molded into a lens 5 having a shell-shaped element housing portion 50. Also, the resin is molded together with the positioning projection. Next, a phosphor is thinly applied to the element accommodating portion 50 to form the phosphor layer 5A.
[0028]
Next, the convex portion provided on the lens 5 and the concave portions provided on the leads 2A and 2B are positioned and fixed so as to fit each other. At this time, a transparent silicon resin is injected into the element accommodating section 50. Next, a lens 5 is put on the leads 2A and 2B to be fixed by bonding, and the LED element 4 is sealed with silicon.
[0029]
Hereinafter, the operation of the light emitting device according to the first embodiment will be described.
[0030]
A drive unit (not shown) applies a drive voltage to the leads 2A and 2B. The LED element 4 emits light based on the drive voltage and emits blue light. The blue light emitted from the LED element 4 is applied to the phosphor layer 5A. The phosphor layer 5A emits yellow light when excited based on blue light. The yellow light and the blue light are mixed by the phosphor layer 5A to become white light. The white light travels through the lens 5, is condensed at the shell-shaped portion, and is emitted outside the lens 5. The emitted white light is collected in a predetermined irradiation range at a similar ratio determined by the size of the light source unit and the shape of the optical system.
[0031]
According to the above-described first embodiment, the following effects can be obtained.
(1) The element housing portion 50 is provided on the external lens 5 and the phosphor layer 5A is thinly provided on the inner peripheral surface of the element housing portion 50 so as to integrally surround the LED element 4; 5A can be formed uniformly and thinly. Further, since the phosphor layer 5A having a uniform thickness can be formed, a decrease in luminous intensity due to light absorption can be prevented. In addition, since the enlargement of the size of the light source due to the thickness of the phosphor layer 5A can be minimized, the light can be condensed into a spot by the condensing optical system, and the luminous intensity in a predetermined irradiation range can be increased. it can.
(2) Even when the LED element 4 having a large size (for example, about 1000 μm square) is used as a light source, it is possible to prevent light source size from being enlarged by being covered with the phosphor layer 5A and to secure light collecting properties. Will be possible.
(3) Since the lens 5 is formed separately and positioned and fixed with respect to the leads 2A and 2B, the LED element 4 and the phosphor layer 5A are arranged in an appropriate positional relationship, which is desirable. It is possible to accurately condense light in the irradiation direction and the irradiation range. In addition, it becomes possible to selectively attach a lens 5 having a shape according to the purpose and the light collecting property.
(4) In the method of providing the phosphor layer 5A in the element accommodating portion 50 of the lens 5, a method of forming the layer to be uniform and thin can be selected. This makes it possible to reduce the manufacturing cost.
(5) Since the LED element 4 is mounted on the leads 2A and 2B via the submount 3 having high thermal conductivity, heat radiation is improved, and there is a margin for increasing the output of the light emitting device in response to a demand for an increase in luminous intensity. Can respond.
[0032]
FIG. 2 shows an element housing portion of the lens according to the second embodiment. In the lens 5, an element accommodating portion 50 surrounding the LED element 4 is formed in a rectangular shape substantially the same as the outer shape of the LED element 4. In the following description, portions having the same configuration as in the first embodiment are denoted by the same reference numerals, and duplicate description will be omitted.
[0033]
According to the above-described second embodiment, since the gap 5B between the LED element 4 and the phosphor layer 5A can be made smaller, the enlargement of the light source size can be suppressed more effectively, and the radiation is thereby emitted. The light collecting property can be further improved.
[0034]
3A and 3B show a light emitting device according to a third embodiment, wherein FIG. 3A is a longitudinal sectional view, FIG. 3B is a partially enlarged view of an LED element, and FIG. 3C is a sectional view taken along line BB of FIG. .
[0035]
As shown in FIGS. 3A and 3B, the light emitting device 1 surrounds the LED elements 4 mounted on the wiring patterns 3A, 3B, and 3C of the submount 3, respectively. And a lens 5 externally fixed to the leads 2A and 2B.
[0036]
As shown in FIG. 3C, the LED element 4 is composed of a red LED element 40 that emits red light, and eight blue LED elements 41 arranged around the red LED element 40, in wiring patterns 3A and 3B. , And 3C, respectively, and each LED element has a chip size of 300 × 300 μm.
[0037]
The phosphor layer 5A is made of Ce: YAG which emits yellow light when excited based on blue light emitted from the blue LED element 41.
[0038]
According to the above-described third embodiment, in addition to the favorable effects of the first embodiment, the blue light emitted from the blue LED element 41 and the yellow light emitted from the phosphor layer 5A excited by the blue light are added. White light is obtained by mixing with light, and white light with high color rendering properties can be obtained by adding red light emitted from the red LED element 40.
[0039]
In addition, as another configuration in which a plurality of LED elements are provided, for example, instead of the blue LED element 41, an ultraviolet LED element 41 is arranged around the red LED element 40, and a red, blue, and green phosphor is mixed. White light may be obtained based on passing ultraviolet light through the body layer 5A. Also, instead of providing the red LED elements 40, nine blue LED elements 41 may be provided.
[0040]
Further, in the above-described embodiment, the configuration in which the light of the LED element 4 is wavelength-converted by the phosphor has been described. However, for example, a light diffusion layer is formed on the inner peripheral surface of the element accommodating section 50 to radiate the light from the LED element 4. The diffused light may be diffused by a light diffusion layer. According to this, the plurality of light emitting elements can be approximated to a continuous light source, and the size of the light source can be reduced.
[0041]
4A and 4B show a light emitting device according to a fourth embodiment, wherein FIG. 4A is a longitudinal sectional view, and FIG. 4B is a partially enlarged view of an LED element.
[0042]
As shown in FIGS. 4A and 4B, the light emitting device 1 includes an insulating layer 6A, a base material 6B made of a good heat conductor such as aluminum, a copper foil provided on the surface of the insulating layer 6A, and the like. The substrate 6 having the wiring patterns 3A and 3B described above is used, and the LED elements 4 having a smaller size (300 × 300 μm) than the LED elements 4 described in the first embodiment are flip-chip mounted on the wiring patterns 3A and 3B. The structure of the first embodiment differs from the first embodiment in the joined structure.
[0043]
According to the above-described fourth embodiment, in addition to the favorable effects of the first embodiment, since the substrate 6 having excellent heat dissipation is used, the heat generated by the lighting of the LED elements 4 is efficiently transmitted through the substrate 6. It is possible to dissipate well and to cope with an increase in the output of the LED element 4. Further, even if the size of the LED element 4 is reduced, the thickness of the phosphor layer 5A is small, so that light can be prevented from being blocked. In addition, by using the small LED element 4, light can be condensed into a smaller spot by the light condensing optical system, and the luminous intensity in a predetermined irradiation range can be improved.
[0044]
FIG. 5 shows a longitudinal section of the light emitting device according to the fifth embodiment.
[0045]
In this light emitting device 1, an LED element 4 having a size of 300 × 300 μm is face-up joined to the wiring pattern 3A of the substrate 6 described in the fourth embodiment, and the electrode portion of the LED element 4 is connected to the wiring patterns 3A and 3B. Are electrically connected by a bonding wire 7.
[0046]
The lens 5 has an element accommodating portion 50 formed in a dome shape so as to surround the LED element 4 and the bonding wire 7, and a phosphor layer 5A formed in a thin layer on the inner peripheral surface of the element accommodating portion 50. Is provided. A transparent silicon resin (not shown) is injected into the inside of the element housing portion 50.
[0047]
According to the fifth embodiment described above, even when the LED elements 4 are face-up joined, it is possible to suppress an increase in the size of the light source, to increase the luminous intensity, and to improve the light-collecting property. The dome shape of the element accommodating portion 50 is preferably formed with a minimum radius size capable of protecting the bonding wire 7, and may be formed in a conical shape, for example.
[0048]
In each of the above-described embodiments, the light emitting device in which the phosphor layer 5A is thinly formed in the element accommodating portion 50 formed in the lens 5 in a concave shape has been described. For example, if the phosphor layer 5A can be formed thin and compact It is also possible to provide the lens 5 and the phosphor layer 5A separately.
[0049]
FIG. 6 shows a longitudinal section of the light emitting device according to the sixth embodiment.
[0050]
The light emitting device 1 includes an LED element 4 face-up joined to a wiring pattern 3A of a substrate 6, a light transmitting resin cap 8 provided separately to surround the LED element 4 in a dome shape, and a cap 8 And a phosphor layer 5A formed in a thin layer on the outer surface of the substrate 5. The lens 5 is integrated with the substrate 6 with a gap 5C between the element accommodating portion 50 and the phosphor layer 5A. Further, a transparent silicone resin is injected into the inside of the cap 8.
[0051]
According to the above-described sixth embodiment, since the lens 5 and the phosphor layer 5A can be formed in different steps, the thickness of the phosphor layer 5A formed on the surface of the cap 8 can be easily controlled. Can be. The shape of the cap 8 is not limited to the dome shape shown in the figure, and may be formed, for example, in a rectangular shape capable of covering the flip-chip bonded LED element 4.
[0052]
In addition, the above-described condensing optical system condenses light in the direction of the optical axis of the light source, but may be applied to, for example, a light emitting device that irradiates light in a direction orthogonal to the optical axis of the light source.
[0053]
FIG. 7 shows a longitudinal section of the light emitting device according to the seventh embodiment.
[0054]
This light emitting device 1 is provided with a horizontal emission type lens 5 that emits light emitted from the LED element 4 in a horizontal direction orthogonal to the optical axis, instead of the bullet-shaped lens 5 shown in the fourth embodiment. It has a configuration. The lens 5 is provided integrally with a reflection surface 5D that totally reflects light emitted from the LED element 4.
[0055]
According to the above-described seventh embodiment, the light reflected by the reflection surface 5D is emitted in the horizontal direction, so that the light extraction efficiency in the direction orthogonal to the optical axis is improved, and the light in the side direction of the lens 5 is improved. The light collecting property is improved. This can increase the luminous intensity in a predetermined horizontal irradiation range.
[0056]
Further, the present invention can be applied to a light emitting device that irradiates light through a configuration in which a transmission optical system and a reflection optical system are combined as a light collecting optical system.
[0057]
FIG. 8 shows a longitudinal section of the light emitting device according to the eighth embodiment.
[0058]
This light emitting device 1 includes an LED element 4 face-up bonded on a substrate 6, a reflective lens 5 provided around the LED element 4 and made of a light transmitting material such as silicon resin, and a reflective film of the lens 5. And a light-shielding plate 9 having a slit 9A for transmitting the light reflected by 5E.
[0059]
The lens 5 is formed to have a hemispherical outer shape, and has a reflective film 5E made of aluminum or the like formed on its surface by a known film forming technique such as sputtering.
[0060]
Further, the lens 5 has a space 50A for accommodating the substrate 6 at a central portion, and a distal end portion of the space 50A is formed in a dome shape. The phosphor layer 5A is formed in a thin layer on the inner peripheral surface of the tip portion.
[0061]
Light emitted from the LED element 4 is emitted to the lens 5 via the phosphor layer 5A. The light transmitted through the lens 5 is reflected by the reflection film 5E and emitted to the outside of the lens 5 through the slit 9A.
[0062]
According to the above-described eighth embodiment, even when light transmitted through the lens 5 and reflected by the light reflection film 5E is emitted from the slit 9A, good light-collecting performance can be obtained because the light source size is small. Can be given.
[0063]
In each of the above-described embodiments, the configuration in which the element accommodating portion 50 is provided on the lens 5 has been described. However, the element accommodating portion 50 is provided on a light transmissive member different from the lens 5, and the light transmissive member and the lens 5 are provided. May be integrated to form a condensing optical system.
[0064]
【The invention's effect】
As described above, according to the light emitting device of the present invention, the element housing is provided on the external lens, and the phosphor layer is provided thin on the inner peripheral surface of the element housing so as to integrally surround the LED element. In addition, the size of the light source can be prevented from increasing, the absorption loss of light can be reduced, the luminous intensity can be increased, and light converged in a desired direction and range can be irradiated.
[Brief description of the drawings]
1A and 1B show a light emitting device according to a first embodiment of the present invention, wherein FIG. 1A is a longitudinal sectional view, FIG. 1B is an enlarged partial sectional view of an LED element, and FIG. FIG. 4 is a partial cross-sectional view taken along the line AA of FIG.
FIG. 2 is a partial sectional view of a light emitting device according to a second embodiment.
3A and 3B show a light emitting device according to a third embodiment, in which FIG. 3A is a longitudinal sectional view, FIG. 3B is a partial sectional view in which an LED element is enlarged, and FIG. It is a fragmentary sectional view in the B section.
4A and 4B show a light emitting device according to a fourth embodiment, in which FIG. 4A is a longitudinal sectional view, and FIG. 4B is a partial sectional view in which an LED element is enlarged.
FIG. 5 is a longitudinal sectional view of a light emitting device according to a fifth embodiment.
FIG. 6 is a longitudinal sectional view of a light emitting device according to a sixth embodiment.
FIG. 7 is a longitudinal sectional view of a light emitting device according to a seventh embodiment.
FIG. 8 is a longitudinal sectional view of a light emitting device according to an eighth embodiment.
FIG. 9A is a longitudinal sectional view showing a conventional light emitting device.
(B) is the elements on larger scale of LED of (a).
FIG. 10 is a partial sectional view showing another configuration of a conventional light emitting device.
FIG. 11A is a diagram showing light-collecting properties when a light source size is small.
(B) is a diagram showing light-collecting properties when the light source size is large.
[Explanation of symbols]
1, light emitting device 2A, lead 2B, lead 3, submount 3A, circuit pattern 3A, wiring pattern 3B, wiring pattern 4A, bump 4, LED element 5, lens 5A, phosphor layer 5B, gap 5C, gap 5D, reflection Surface 5E, reflective film 6, substrate 6A, insulating layer 6B, base material 7, bonding wire 8, cap 8, translucent resin portion 9, light shielding plate 9A, slit 10, light emitting device 11A, lead frame 12, cup 14, Bonding wire 15, sealing portion 15A, transparent spacer 15B, fluorescent material 16, epoxy resin 17, substrate 18, light collecting optical system 19, light source 40, element 41, element 50, element accommodating section 50A, space

Claims (11)

A semiconductor light emitting element portion that emits light of a predetermined wavelength,
A light transmitting portion having a space formed integrally with the semiconductor light emitting element portion and formed of a light transmitting material that transmits the light and accommodating the semiconductor light emitting element portion;
A phosphor portion formed in a thin layer along the shape of the space and excited upon irradiation with the light. The light emitting device according to claim 1, wherein the light transmitting portion has a condensing optical shape for condensing the light. The light emitting device according to claim 1, wherein the semiconductor light emitting element is a flip-chip type LED element that emits the light from a light emitting surface provided on a side opposite to a mounting surface. The light emitting device according to claim 1, wherein the space is provided close to an outer shape of the semiconductor light emitting element. The light emitting device according to claim 1, wherein the semiconductor light emitting element section is formed by regularly arranging a plurality of LED elements. The light emitting device according to claim 1, wherein the semiconductor light emitting element portion is formed by regularly arranging a plurality of LED elements having different emission wavelengths. A first step of forming an electrode with a metal material;
A second step of mounting a semiconductor light emitting element on the electrode;
A third step of positioning a light transmitting section having a phosphor layer formed in a thin layer along the shape of an element housing section for housing the semiconductor light emitting element with respect to the electrode;
A fourth step of bonding and fixing the light transmitting section and the electrode so that the semiconductor light emitting element is surrounded by the phosphor layer of the element accommodating section. The method of manufacturing a light emitting device according to claim 7, wherein the phosphor layer is formed by spraying a phosphor material on the element housing portion after molding a light transmitting resin. The method according to claim 7, wherein the electrode is a lead electrode provided on a surface of a submount material having high thermal conductivity. The method according to claim 7, wherein the electrode is a copper foil electrode provided on a surface of a base material having high thermal conductivity via an insulating layer. The method according to claim 7, wherein the semiconductor light emitting element is flip-chip bonded to the electrode.

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