JP2009176923A - Photoelectron device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectron device that includes a transparent sealing structure having a given structural ratio. <P>SOLUTION: The photoelectron device includes a carrier, light-emitting elements in connection with the carrier, a patterned structure that is formed on the top surface of the carrier to surround the light-emitting elements, and transparent sealing structures formed above the light-emitting elements. The transparent sealing structures each having a given structural ratio are obtained by bringing them together in a region between the patterned structure and the light-emitting elements while controlling the amount of glue in the transparent sealing structures, thereby sharply improving the light-emitting efficiency of the photoelectron device. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an optoelectronic device, and more particularly, to a light emitting device including a transparent sealing structure having a predetermined structural ratio.

  Light emitting diodes play an important role in solid state devices having photoelectric conversion characteristics. Generally speaking, a light emitting diode has a light emitting layer sandwiched between two semiconductor layers having different electrical properties. When a driving current is applied to the electrodes located above the two semiconductor layers, electrons and holes in the two semiconductor layers are injected into the light emitting layer, and combined in the light emitting layer to emit light. The light generated at this time is omnidirectional, and is emitted from the light emitting layer via each surface of the light emitting diode layer.

  At the same time, light-emitting diodes are also widely used light sources. Compared with conventional incandescent bulbs and fluorescent lamp tubes, light-emitting diodes have excellent characteristics of power saving and long life. It is applied to various fields, such as industries such as traffic signs, backlight modules, street lighting, and medical equipment. With the application and development of light-emitting diode light sources, the demand for luminance is increasing, so how to increase the luminous efficiency and improve the luminance is a common issue in the industry.

  One of the challenges that is worth studying is how to improve the luminous efficiency by designing a transparent sealing structure. Currently, generally, a cup-shaped structure is adopted, a light-emitting diode is placed at the center of the cup, and the distribution of light rays is adjusted and controlled by the shape design of the cup and the sealing glue. Also, the choice of sealing glue material, bottom carrier reflectivity and cup shape design, etc. may affect the luminous efficiency.

  An object of the present invention is to provide a light emitting device including a transparent sealing structure that solves the above-described problems.

  The optoelectronic device provided by the present invention is formed on a carrier, a light emitting device formed on the carrier, a patterned structure formed on the surface of the carrier and surrounding the light emitting device, and above the light emitting device. And a transparent sealing structure. The patterned structure is a transparent structure having a predetermined structure ratio by gathering the transparent sealing structure in a region between the patterned structure and the light emitting device and controlling the amount of glue in the transparent sealing structure. A sealed structure can be created. Among them, the light emitting element may be a light emitting diode, but may be any other element having photoelectric conversion characteristics.

  In addition, another optoelectronic device provided by the present invention includes a carrier, a light emitting device formed on the carrier and having a maximum width z, and formed on the light emitting device, projected on the height y and the surface of the carrier. And a transparent sealing structure having a maximum length x. Among them, the value of y / x is 0.4 to 0.8, and the value of z / x is 0.3 to 0.5.

  Furthermore, another optoelectronic device provided by the present invention includes a carrier having a convex portion having a bottom width b, a light emitting element having a maximum width a and connected above the convex portion, and the convex portion. And a transparent sealing structure covering and covering the light emitting element and having a height of c. Among them, the light emitting element is located near the position of c / 2, and the value of a / b is 3 or less.

  The present invention can remarkably improve the light emission efficiency of the optoelectronic device.

  Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 relates to the first embodiment of the present invention, and the meaning of each symbol is as follows. 104 is a carrier, 102 is a reflective layer, 103 is a light emitting element, 105 is a transparent sealing structure, and 107 is a patterned structure. In addition, similar elements in other drawings described below are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 1, in this embodiment, a reflective layer 102 having high reflectivity is formed on a flat surface of a carrier 104, a light emitting element 103 is formed on the reflective layer 102, and light emission is performed. A patterning structure 107 having hydrophobicity, for example, a circular patterning structure, a rectangular patterning structure or a rectangular patterning structure surrounding the light emitting element 103 is applied around the element 103, and then a transparent sealing material is applied by a dispensing technique. It is formed above the light emitting element 103. Since the patterned structure 107 has hydrophobicity, the transparent sealing material is concentrated in a region between the patterned structure 107 and the light emitting element 103, and at the same time, the amount of glue in the transparent sealing material is controlled during dispensing. Thus, a transparent sealing structure 105 having a fixed protruding shape as shown in the figure can be obtained. The optoelectronic device completed as in the above-described steps causes the light generated by the light emitting device 103 to be emitted from the transparent sealing structure 105 after being reflected by the reflecting action of the reflective layer 102 below the light emitting device 103. Therefore, the combination of the reflective layer 102 and the transparent sealing structure 105 can greatly improve the light emission efficiency.

  Among them, the maximum width of the light emitting element 103 is z, the height of the transparent sealing structure 105 is y, and the maximum length of the contact area between the transparent sealing structure 105 and the reflective layer 102 is x. When the value of y / x is 0.4 to 0.8, the luminous efficiency is high, preferably when the value of y / x is about 0.6. On the other hand, when the value of z / x is 0.3 to 0.5, the luminous efficiency is improved, and preferably when the value of z / x is about 0.4.

  The carrier 104 is a printed circuit board (PCB), a flexible printed circuit board (FCB), a ceramic substrate, or a composite substrate. In addition to supporting the light emitting element 103, the carrier 104 further derives heat generated by the light emitting element 103. The effect of heat dissipation can also be achieved. The reflective layer 102 has a high reflection coefficient and may be made of an alloy of gold, silver, aluminum, copper, or a combination thereof, or may be made of a polymer material having reflectivity. The light emitting element 103 may be a quaternary or ternary light emitting diode, and light emitted therefrom may be red light, blue light, green light, yellow light, or the like. The patterned structure 107 is made of a hydrophobic material, and a surface tension can be formed between such a material and the transparent sealing material, so that the transparent sealing material is patterned when dispensed. The transparent sealing structure 105 that is gathered in the region between the luminescent structure 107 and the light emitting element 103 and protrudes is generated. Among them, the patterned structure 107 may be a polymer material having a hydrophobic functional group, for example, a polymer material having a functional group such as a methyl group and a fluorine group. The preparation uses a sol-gel method or a polymer polymerization method to make a polymer material, and a specific pattern such as a ring shape, a rectangular shape or a square shape on the surface of the carrier 104 in a manner such as a screen printing process or an injection printing process. Is to form a pattern. The transparent sealing structure 105 is formed by forming a transparent sealing material on the light emitting element 103 by a dispensing technique and curing it by heating. Among these, the transparent sealing material is an organic insulating material having high light transmittance, For example, a material made of epoxy resin, polyimide, silicon resin, or a combination thereof.

  FIG. 2 relates to a second embodiment of the present invention, and as described in the first embodiment, after forming a reflective layer 102 having a high reflectance on a carrier (not shown), A light emitting element 103 is formed on the reflective layer 102, and a transparent sealing material is formed above the light emitting element 103 by a dispensing technique, and the amount of glue in the transparent sealing material is controlled, whereby a specific protruding shape is formed. A transparent sealing structure 105 is formed. In order to have optimal luminous efficiency for the present invention, the dimensions of this transparent sealing structure 105 must have a certain combination and design. As shown in FIG. 2, the maximum width of the light emitting element 103 is z, the height of the transparent sealing structure 105 is y, and the maximum length of the contact surface between the transparent sealing structure 105 and the reflective layer 102 is x. Among them, the light emitting element 103 employs a 15 to 40 mil chip that is often seen. By changing the dispensing conditions and forming various transparent sealing structures 105 having a protruding shape above the light emitting element 103, various luminous efficiencies generated when the values of y / x are different are obtained. Also, a diagram is created using both as coordinate axes, and the result is shown in FIG. 4A. As shown in FIG. 4A, regardless of the size of the chip, when the value of y / x is between 0.4 and 0.8, the luminous efficiency is high, and in particular, the value of y / x is about 0. 0. When it is 6, the luminous efficiency is the highest. In addition, when the y / x value of the transparent sealing structure 105 is fixed to 0.5, various z / x values are changed, and at the same time, the respective luminous efficiencies are obtained. As shown in FIG. 4B, the luminous efficiency is high when the value of z / x is 0.3 to 0.5 regardless of the size of the chip. When the value of x is about 0.4, the luminous efficiency is the highest.

  FIG. 3 relates to the third embodiment of the present invention, and further, the object of wavelength conversion is achieved by applying a fluorescent powder layer 108 to the surface of the light emitting element 103. Among them, the light-emitting element 103 may be an InGaN-based light-emitting diode, which emits blue light and generates white light by exciting the YGA-based yellow fluorescent powder in the fluorescent powder layer 108.

  A fourth embodiment of the present invention is shown in FIG. 5, and a plurality of light emitting elements 123, 133 and 143 are used instead of the light emitting element 103 in the second embodiment, and among these, the light emitting elements 123, 133 and 143 are: Different colors of light, such as red light, green light and blue light, are emitted and mixed in the transparent sealing structure 105 to produce white light. As shown in the figure, the maximum width of the arrangement of the plurality of light emitting elements 123, 133, and 143 is z, the height of the transparent sealing structure 105 is y, and the maximum contact surface between the transparent sealing structure 105 and the reflective layer 102 is maximum. The length is x, of which the y / x value is 0.4 to 0.8, preferably 0.6, and the z / x value is 0.3 to 0.5. Yes, preferably 0.4.

  FIG. 6 relates to a fifth embodiment of the present invention. FIG. 6 shows a light bulb type optoelectronic device, which is formed above a carrier 202 having a convex portion 203 and the convex portion 203. And a transparent sealing structure 205 that encloses and covers the light emitting element 204. Among them, the width of the light emitting element 204 is a, the bottom width of the convex portion 203 is b, and the height of the transparent sealing structure 205 is c. In order to improve the luminous efficiency of the light bulb type optoelectronic device, the ratio a / b of the width of the light emitting device 204 to the bottom width of the convex portion 203 is preferably 3 or less, and the light emitting device 204 has c / It is located near the position of 2. Further, the light emitting element 204 can be replaced with a plurality of light emitting elements having different colors, for example, a white light source composed of red, green, and blue. At the same time, the patterned structure 206 may be formed in the vicinity of the bottom of the convex portion 203, and this patterned structure 206 is formed so as to surround the convex portion 203 around the bottom of the convex portion 203. Since the transparent sealing structure 205 formed in stages can be gathered above the convex portion 203, a sphere close to a circle can be obtained.

  FIG. 7 shows a backlight module device. Among them, the backlight module device 700 is installed on the light emitting path of the light source device 710 including the optoelectronic element 711 described in any of the above-described embodiments, and the optical that is emitted after appropriately processing the light. A device 720 and a power supply system 730 for providing power necessary for the light source device 710 are included.

  FIG. 8 shows a lighting device. The lighting device is a vehicle light, a street light, a flashlight, a road light, an instruction light, and the like. Among them, the illumination device 800 is a light source device 810 including the optoelectronic element 811 described in any of the above-described embodiments, and a power supply system 820 for supplying power necessary for the light source device 810 and a current to the light source device 810. And a control element 830 for controlling the input to.

  The preferred embodiment of the present invention has been described above, but the present invention is not limited to this embodiment, and all modifications to the present invention are within the scope of the present invention unless departing from the spirit of the present invention.

It is a figure which shows the optoelectronic device which concerns on the 1st Example of this invention. It is a figure which shows the optoelectronic device which concerns on the 2nd Example of this invention. It is a figure which shows the optoelectronic device which concerns on the 3rd Example of this invention. It is a relationship diagram between luminous efficiency and the value of y / x. It is a relationship figure of luminous efficiency and the value of z / x. It is a figure which shows the optoelectronic device based on the 4th Example of this invention. It is a figure which shows the optoelectronic device based on the 5th Example of this invention. It is a figure which shows the backlight module apparatus of this invention. It is a figure which shows the illuminating device of this invention.

Explanation of symbols

102 Reflective layer 104 Carrier 105 Transparent sealing structure 107 Patterned structure 108 Fluorescent powder layer 103, 123, 133, 143, 204 Light emitting element 202 Carrier 203 Convex part 205 Transparent sealing structure 700 Backlight module apparatus 710 Light source apparatus 711 Photoelectric element 720 Optical Device 730 Power supply system 800 Illumination device 810 Light source device 811 Optoelectronic element 820 Power supply system 830 Control element

Claims (19)

A carrier;
A light emitting device formed on the carrier;
A patterned structure formed on the carrier and surrounding the light emitting element;
A transparent sealing structure formed on the light emitting element and positioned between the patterned structure and the light emitting element;
including,
Optoelectronic device. The surface of the carrier is flat;
The optoelectronic device according to claim 1. The patterned structure is made of a material having hydrophobicity, and the material is a polymer material having a functional group including a methyl group and a fluorine group.
The optoelectronic device according to claim 1. A fluorescent powder layer covering the light emitting device;
The optoelectronic device according to claim 1. If the maximum width of the light emitting element is z, the height of the transparent sealing structure is y, and the maximum length that the transparent sealing structure projects on the surface of the carrier is x, the value of y / x is 0. 4 to 0.8, or the value of z / x is 0.3 to 0.5,
The optoelectronic device according to claim 1. A reflective layer positioned between the carrier and the light emitting device;
The optoelectronic device according to claim 1. A carrier;
A light emitting device formed on the carrier and having a maximum width of z;
A transparent sealing structure formed on the light emitting element, the height is y, and the maximum length projected onto the surface of the carrier is x;
Including
The value of y / x is 0.4 to 0.8,
Optoelectronic device. The value of y / x is about 0.6;
The optoelectronic device according to claim 7. The value of z / x is 0.3 to 0.5,
The optoelectronic device according to claim 7. A fluorescent powder layer covering the light emitting device;
The optoelectronic device according to claim 7. A reflective layer located below the light emitting device;
The optoelectronic device according to claim 7. The light emitting element is composed of a plurality of light emitting elements, and the maximum width z is a maximum width of an array formed by the plurality of light emitting elements.
The optoelectronic device according to claim 7. Further comprising a patterned structure formed on the carrier and surrounding the light emitting device;
The optoelectronic device according to claim 7. A carrier having a convex part with a bottom width of b;
A light emitting element having a maximum width of a and connected above the convex portion;
A transparent sealing structure having a height c and enclosing the convex portion and the light emitting element;
The light emitting element is located near the position of c / 2,
Optoelectronic device. The value of a / b is 3 or less,
The optoelectronic device according to claim 14. The light emitting element is a plurality of light emitting elements of different colors;
The optoelectronic device according to claim 14. Further comprising a patterned structure formed near the bottom of the convex part,
The optoelectronic device according to claim 14. A light source device comprising the optoelectronic element according to any one of claims 1 to 17,
An optical device located in the light output path of the light source device;
A power supply system for providing power necessary for the light source device;
including,
Backlight module device. A light source device comprising the optoelectronic element according to any one of claims 1 to 17,
A power supply system for providing power necessary for the light source device;
A control element for controlling input of the power source to the light source device;
including,
Lighting device.

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