KR101465708B1 - Method of manufacturing a semiconductor device structure - Google Patents

Method of manufacturing a semiconductor device structure Download PDF

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Publication number
KR101465708B1
KR101465708B1 KR1020130014436A KR20130014436A KR101465708B1 KR 101465708 B1 KR101465708 B1 KR 101465708B1 KR 1020130014436 A KR1020130014436 A KR 1020130014436A KR 20130014436 A KR20130014436 A KR 20130014436A KR 101465708 B1 KR101465708 B1 KR 101465708B1
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KR
South Korea
Prior art keywords
lens
semiconductor
encapsulant
electrodes
device structure
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KR1020130014436A
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Korean (ko)
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KR20140101143A (en
Inventor
김창태
정현민
김석중
Original Assignee
주식회사 씨티랩
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Priority to KR1020130014436A priority Critical patent/KR101465708B1/en
Priority to PCT/KR2014/000648 priority patent/WO2014116035A1/en
Publication of KR20140101143A publication Critical patent/KR20140101143A/en
Application granted granted Critical
Publication of KR101465708B1 publication Critical patent/KR101465708B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Abstract

The present disclosure relates to a method of manufacturing a semiconductor device structure, comprising the steps of: arranging a plurality of semiconductor elements each having two electrodes, which are flip chip type semiconductor light emitting elements, with two electrodes facing downward; Enclosing the plurality of semiconductor elements to expose the two electrodes using an encapsulant; Then, a lens is formed in an encapsulant located on a plurality of semiconductor elements on the side opposite to the side where the two electrodes are exposed, and an encapsulant in which the lens is placed on the plurality of semiconductor elements is cut with the two electrodes exposed To a method of fabricating a semiconductor device structure.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a semiconductor device structure,

Disclosure relates generally to a method of manufacturing a semiconductor device structure, and more particularly to a method of manufacturing a semiconductor device structure with a lens.

Examples of the excitation and semiconductor elements include semiconductor light emitting elements (e.g., laser diodes), semiconductor light receiving elements (e.g., photodiodes), pn junction diode electric elements, semiconductor transistors and the like. Representatively, a Group III nitride semiconductor light emitting element is exemplified . The III-nitride semiconductor light emitting device includes a compound semiconductor layer made of Al (x) Ga (y) In (1-xy) N (0? X? 1, 0? Y? 1, 0? X + Such as SiC, SiN, SiCN, and CN, but does not exclude the inclusion of a material or a semiconductor layer of these materials.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 is a diagram showing a conventional semiconductor light emitting device. The semiconductor light emitting device includes a substrate 100, a buffer layer 200, a first semiconductor layer (not shown) having a first conductivity 300, an active layer 400 for generating light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited, A conductive film 600 and an electrode 700 serving as a bonding pad are formed on the first semiconductor layer 300. An electrode 800 serving as a bonding pad is formed on the exposed first semiconductor layer 300. [ Here, when the substrate 100 side is placed in the package, it functions as a mounting surface.

2 is a diagram showing another example of a conventional semiconductor light emitting device (Flip Chip). A semiconductor light emitting device includes a substrate 100 (e.g., a sapphire substrate), a first semiconductor layer having a first conductivity An active layer 400 (e.g., InGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a second semiconductor layer 400 having a second conductivity different from the first conductivity, (Ag reflective film) 901 (for example, Ag reflective film) for reflecting light onto the substrate 100 side, and an electrode film 901 (for example, a p-type GaN layer) An electrode 800 (e.g., Cr / Ni / Au) functioning as a bonding pad is formed on the first semiconductor layer 300 exposed and etched to form an electrode film 903 (e.g., Au diffusion layer) Laminated metal pads) are formed. Here, when the electrode film 903 side is placed in the package, it functions as a mounting surface. Flip chip or junction down type chips shown in FIG. 2 are superior to the lateral chips shown in FIG. 1 in heat radiation efficiency in terms of heat emission efficiency. The lateral chip must emit heat through the sapphire substrate 100 having a thickness of 80 to 180 mu m while the flip chip emits heat through the metal electrodes 901, 902 and 903 located close to the active layer 400 Because it can emit.

15 is a diagram illustrating a conventional semiconductor light emitting device package or a semiconductor light emitting device structure. The semiconductor light emitting device package includes lead frames 110 and 120, a mold 130, and a vertical semiconductor light emitting device Emitting chip, and the cavity 140 is filled with an encapsulant 170 containing the fluorescent material 160. The encapsulant 170 may be a light-emitting chip. The lower surface of the vertical semiconductor light emitting device 150 is electrically connected to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light (for example, blue light) emitted from the vertical type semiconductor light emitting device 150 excites the phosphor 160 so that the phosphor 160 makes light (for example, yellow light), and these lights (blue light + Make white light. In this case, the mold 130, the encapsulant 170, the lead frames 110 and 120, the mold 130, and the encapsulant 170 carry the vertical semiconductor light emitting device, Carrier).

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device structure, comprising the steps of: forming a plurality of semiconductor elements each having two electrodes, Disposing the semiconductor device of FIG. Enclosing the plurality of semiconductor elements to expose the two electrodes using an encapsulant; Then, a lens is formed in an encapsulant located on a plurality of semiconductor elements on the side opposite to the side where the two electrodes are exposed, and an encapsulant in which the lens is placed on the plurality of semiconductor elements is cut with the two electrodes exposed The method comprising the steps of: (a) forming a semiconductor device structure on a semiconductor substrate;

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device (lateral chip)
2 is a view showing another example (Flip Chip) of a conventional semiconductor light emitting device,
Figure 3 shows an example of a method of manufacturing a semiconductor device structure in accordance with the present disclosure;
4 is a diagram illustrating an example of a method for manufacturing a flip chip package in accordance with the present disclosure;
5 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure,
6 is a diagram illustrating an example of a semiconductor device structure according to the present disclosure;
7 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
8 is a view showing another example of a semiconductor device structure according to the present disclosure,
9 is a diagram illustrating an example of the use of a semiconductor device structure in accordance with the present disclosure;
10 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
11 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
12 is a diagram showing another example of the semiconductor device structure according to the present disclosure,
13 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
14 is a diagram showing another example of a semiconductor device structure according to the present disclosure,
15 is a view showing an example of a conventional semiconductor light emitting device package or a semiconductor light emitting device structure,
16 to 18 are views showing an example of a method of manufacturing the semiconductor device structure shown in FIG. 11,
19 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
20 is a diagram illustrating another example of a method of manufacturing a semiconductor device structure according to the present disclosure;
Figs. 21 to 23 are views showing an example of a method of manufacturing the semiconductor device structure shown in Fig. 12,
24 is a view showing an example of a method of manufacturing the semiconductor device structure shown in FIG. 14,
25 is a view showing an example of a mask having a hole according to the present disclosure,
26 is a view showing an example of a semiconductor element structure in which a plurality of lenses are formed according to the present disclosure;
Fig. 27 is a view for explaining the principle of forming the lens shown in Fig. 24,
28 is a view showing still another example of the semiconductor device structure according to the present disclosure,
29 is a view showing an example of a method of manufacturing the semiconductor device structure shown in FIG. 28,
30 is a view showing still another example of the semiconductor device structure according to the present disclosure,
31 is a view showing another example of a method of manufacturing the semiconductor device structure shown in FIG. 30,
32 is a view showing another example of a cutter having a pin,
33 is a view showing still another example of a cutter having a pin,
34 is a view showing still another example of a cutter having a pin,
35 is a view showing another example of a method of manufacturing the semiconductor device structure shown in FIG. 30;
36 is a view showing another example of a semiconductor device structure including a lens according to the present disclosure;
37 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure,
Figures 38 and 44 show another example of a semiconductor device structure with a lens according to the present disclosure,
39 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure,
40 is a diagram illustrating another example of a semiconductor device structure including a lens according to the present disclosure;
41 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure,
42 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure,
Figures 43 and 45 show another example of a semiconductor device structure with a lens according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

3 is a diagram showing an example of a method of manufacturing a semiconductor device structure according to the present disclosure. After a plate 1 is prepared, a semiconductor element 2 provided with two electrodes 80 and 90 is bonded to an adhesive 3 ) Is fixed to the plate (1). Next, the encapsulating material (4) is used to wrap the semiconductor element (2). Next, the plate 1 and the semiconductor element 2 are separated. The material constituting the plate 1 is not particularly limited, and a material such as sapphire may be used, or a flat flat structure such as a metal or glass may be used. There is no particular limitation on the material forming the adhesive 3, and any adhesive may be used as long as it can fix the semiconductor element 2 to the plate 1 only. As the material forming the sealing agent 3, a silicone epoxy conventionally used in an LED package can be used. After the sealing agent 4 is formed, separation between the semiconductor element 2 and the plate 1 can be performed by applying heat to melt the adhesive 3 or by using a solvent capable of melting the adhesive 3. It is also possible to use heat and solvent together. It is also possible to use an adhesive tape. The encapsulant 4 may be formed by conventional methods such as dispensing, screen printing, molding, and spin coating. Alternatively, the encapsulant 4 may be formed by applying a photo-curing resin (UV curable resin) Do. In the case where a translucent plate such as sapphire is used for the plate 1, it is also possible to irradiate light from the plate 1 side. For the sake of explanation, one semiconductor element 2 is shown on the plate 1, but a plurality of semiconductor elements 2 can be placed on the plate 1 to carry out a process. Although the semiconductor element 2 has been described as having two electrodes 80 and 90, the number of the semiconductor elements 2 is not particularly limited. For example, in the case of a transistor, it can have three electrodes.

Fig. 4 is a diagram showing an example of a method for manufacturing a flip chip package according to the present disclosure. As a semiconductor element 2, a junction down type chip is presented. As a junction down type chip, a flip chip type semiconductor light emitting element as shown in Fig. 2 can be exemplified. 2, a semiconductor light emitting device includes a first semiconductor layer 300 (e.g., an n-type GaN layer) having a first conductivity, a first semiconductor layer 300 having a first conductivity An active layer 400 (e.g., InGaN / (In) GaN MQWs) that generates light through recombination of a first conductivity and a second semiconductor layer 500 (e.g., a p-type GaN layer) (For example, an Ag reflective film), an electrode film 902 (for example, a Ni diffusion preventing film), and an electrode film 903 (for example, Au bonding layer) is formed on the first semiconductor layer 300 and an electrode 800 (e.g., Cr / Ni / Au laminated metal pad) functioning as a bonding pad is formed on the first semiconductor layer 300 exposed and etched. The semiconductor device 2 has two electrodes 80 and 90. The electrode 90 may have the same structure as the electrodes 901, 902 and 903 of FIG. 2, or may be a combination of DBR (Distributed Bragg Reflector) It is also good. The electrode 80 and the electrode 90 are electrically insulated by an insulating film 5 such as SiO 2 . The subsequent process is the same, and the encapsulating material 4 is used to wrap the semiconductor element 2. Next, the semiconductor element 2 is separated from the plate 1 and the adhesive 3.

5 is a diagram showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. A plurality of semiconductor elements 2, 2 are integrally covered with a sealing agent 4 on a plate 1. After the plate 1 is removed, it becomes easy to package the semiconductor elements 2, 2 integrally. A method of electrically connecting the semiconductor element 2 and the semiconductor element 2 will be described later. It is also possible to separate them into individual semiconductor elements 2 as in Fig. This can be achieved by separating a plurality of semiconductor elements 2, 2 from the plate 1, and then individualizing them through a process such as sawing. By using the sealing agent 4 having softness after curing, bonding with the flexible circuit board can be further enhanced.

6 is a view showing an example of a semiconductor element structure according to the present disclosure, in which the side surface 4a of the sealing agent 4 is formed to be inclined. In the case where the semiconductor element 2 is a light emitting element, the sealing agent 4 has various angular outer surfaces, so that light extraction efficiency to the outside of the package becomes high. During screen printing, the side wall 4a can be formed by inclining the screen bulkhead, and the side surface 4a can be formed by using a sharp-pointed cutter at the time of cutting.

7 shows another example of a method of manufacturing a semiconductor device structure according to the present disclosure. After the plate 1 is removed, an insulating film 6 such as SiO 2 is formed on the electrode 80 and the electrode 90, As shown in FIG. Thereafter, the external electrode 81 is connected to the electrode 80, and the external electrode 91 is formed on the electrode 90, so that the structure of the conventional package can be obtained. The external electrodes 81 and 91 may correspond to the lead frame of the conventional package. It is also possible to spread the external electrodes 81 and 91 widely to function as a reflective film. The insulating film 6 may have merely an insulating function or alternatively may have a laminated structure of SiO 2 / TiO 2 or DBR so as to reduce light absorption by the external electrodes 81 and 91. When the semiconductor element 2 includes the insulating film 5 as shown in FIG. 4, the insulating film 6 may be omitted. The deposition process and the photolithography process used for forming the insulating film 6 and the external electrodes 81 and 91 are generally used in a semiconductor chip process and are well known to those skilled in the art. By providing the external electrodes 81 and 91, mounting to the PCB, COB, and the like can be facilitated. It is also possible to provide only the insulating film 6 without the external electrodes 81 and 91, if necessary. The insulating film 6 not only functions to protect the semiconductor element 2 and the encapsulating agent 4 but also can function to protect the encapsulating agent 4 from the process of forming the external electrodes 81 and 91. [ Further, the insulating film 6 may be formed of a white material so that the insulating film 6 functions as a reflecting film. For example, a white PSR (Photo Slot Resist) can be used as the insulating film 6 or coated thereon. For example, white PSR may be screen-printed or spin-coated, and then patterned through a general photolithographic process.

FIG. 8 is a view showing another example of the semiconductor device structure according to the present disclosure, and includes a semiconductor device 2A and a semiconductor device 2B electrically connected in series. This configuration is possible by connecting the negative (-) electrode 80A of the semiconductor element 2A and the positive (+) electrode 90B of the semiconductor element 2B through the external electrode 89. Reference numeral 4 denotes an encapsulant; 6, an insulating film; 90A, a positive electrode of the semiconductor element 2A; and 80B, a negative electrode of the semiconductor element 2B. With this configuration, the electrical connection between the integrated semiconductor elements 2A and 2B can be formed through the sealing agent 4 without using the monolithic substrate. In the case of a monolithic substrate, the structure of the semiconductor element thereon is the same, but according to the method of the present disclosure, the semiconductor element 2A and the semiconductor element 2B do not have to be the same function elements. It goes without saying that the semiconductor devices 2A and 2B can be connected in parallel. In addition, the side surface 4a of the encapsulant 4 can be inclined as shown in FIG. 6, and this configuration enables a high-voltage semiconductor light emitting device package or a semiconductor light emitting device structure that can not be imagined .

9A and 9B show an example of the use of the semiconductor device structure according to the present disclosure. In the semiconductor device 2C, the lead wire 7a of the printed circuit board 7 and the electrodes 80 and 90 are directly connected, The element 2D is connected to the lead wire 7b through the external electrodes 81 and 91. The printed circuit board 7 may be a flexible circuit board.

Fig. 10 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. Fig. 10 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure, A first semiconductor layer 300 having a first conductivity, an active layer 400 generating light through recombination of electrons and holes, a second semiconductor layer having a second conductivity different from the first conductivity, (500) are grown, and electrodes (80, 90) are formed. The semiconductor element 2 is attached to the plate 1 using the adhesive 3 and then the substrate 100 is removed prior to covering with the encapsulating agent 4. The rough surface 301 are formed. The subsequent process is the same. The removal of the substrate 100 is possible by a process such as laser lift-off and the rough surface 301 is possible by dry etching such as ICP (Inductively Coupled Plasma). This enables chip-level laser lift-off.

11 shows another example of the semiconductor device structure according to the present disclosure, in which the encapsulant 4 contains a phosphor. YAG, Silicate, Nitride fluorescent material or the like can be used to emit light of a desired color.

12 shows another example of the semiconductor element structure according to the present disclosure, in which a phosphor layer 8 is formed in the encapsulating agent 4 or in the lower part of the encapsulating agent 4. [ This can be formed by depositing the phosphor in the encapsulating agent 4, spin coating it separately, applying the phosphor contained in the volatile liquid, volatilizing it, leaving only the phosphor, and covering it with the encapsulating agent 4. It is possible to form a plurality of phosphor layers 8 as required.

13 shows another example of the semiconductor device structure according to the present disclosure, in which the encapsulant 4 is provided with a rough surface or protrusions 4g for enhancing the light extraction efficiency. The rough surface 4g can be formed by pressing, forming a nanoimprint, or the like. It is also possible to apply the bead material by a method such as etching, sand blasting or the like. The rough surface 4g can be formed before or after the separation of the plate 1.

Fig. 14 is a diagram showing another example of the semiconductor element structure according to the present disclosure, in which the encapsulation agent 4 is provided with a lens 4c. Preferably, the lens 4c is formed integrally with the sealing agent. Such an integral type lens 4c can be formed by a method such as compression molding.

16 to 18 are views showing an example of a method for manufacturing the semiconductor device structure shown in Fig. 11. In the state where the semiconductor elements 2 and 2 are fixed to the plate 1 by using the adhesive 3, Is covered with the encapsulant 4 containing the phosphor, that is, the phosphor layer 8. Next, as shown in Fig. 17, the plate 1 is removed and the semiconductor elements 2, 2 are separated from each other, as shown in Fig. With this method, it becomes possible to conformally coat the so-called phosphor or the phosphor layer 8 with the semiconductor elements 2, 2. It is possible to make the height (V) and the width (H) of the phosphor layer 8 the same. The conformal coating of this type (constitution of the conformal coating by removal of the encapsulant 4 or removal of the phosphor layer 8) is broadly distinguished from the conformal coating which had conventionally been applied by spin coating, screen printing, do.

Fig. 19 is a diagram showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. The semiconductor device 2, 2 manufactured in Fig. 18 is again laminated on the plate 1 And then the sealing agent 4 is applied again. It is also possible to add other phosphors and / or small particles for light scattering to the encapsulating agent (4). Unlike the related art, easy control of the shape of the interface between the phosphor layer 8 and the sealing agent 4 becomes possible. It is possible to easily control both the outer shape of the phosphor layer 8 and the outer shape control of the sealing agent 4 covering the phosphor layer 8. Conversely, it is also possible to introduce the fluorescent substance into the external encapsulant 4 and not introduce the fluorescent substance into the encapsulating material 4 inside. That is, it is also possible to make the external encapsulant 4 become the phosphor layer. In this case as well, the boundary surface and contour control of both are possible. The encapsulant 4 constituting the phosphor layer 8 and the encapsulant 4 covering the phosphor layer 8 may be the same material but may have different characteristics (refractive index, hardness, light transmittance, curing rate, etc.) It may be a substance. Thus, this embodiment can be extended to a method of manufacturing a semiconductor device structure according to the present disclosure to which two or more identical or different encapsulants are applied. In the case of having the phosphor layer 8, the semiconductor element is preferably a semiconductor light emitting element, but when the phosphor is not contained, the semiconductor element does not necessarily have to be a semiconductor light emitting element.

20 is a view showing another example of a method of manufacturing a semiconductor device structure according to the present disclosure. After forming the phosphor layer 8 as shown in Fig. 16, (8) is partly removed to form the phosphor layer (8) conformally on each of the semiconductor elements (2, 2). Thereafter, when the process according to Fig. 19 is carried out, there is an advantage that the use of the plate 1 can be reduced to one time.

21 to 23 are views showing an example of a method for manufacturing the semiconductor device structure shown in Fig. 12, unlike the method shown in Fig. 20, in which the phosphor layer 8 is not completely removed and separated, Leave it and leave it. Next, a semiconductor element structure is manufactured by covering the encapsulation agent 4 as shown in Fig. 22 and separating the semiconductor elements 2,2 as shown in Fig. It goes without saying that the sealing agent 4 may have various shapes such as the shape shown in Fig. 13, the shape shown in Fig. 14, and the like.

Fig. 24 is a view showing an example of a method of manufacturing the semiconductor device structure shown in Fig. 14, in which the semiconductor element 2, 2 is bonded to the plate 1 using the adhesive 3, The fluorescent substance layer 4 is covered with the encapsulating material 4 containing the fluorescent material, that is, the fluorescent substance layer 8. Next, the semiconductor element (2, 2) is not separated but covered with the sealing agent (4) again. Next, before the encapsulating agent 4 is completely cured, the encapsulating agent 4 is pressed by using the mask 11 having the hole 11h as shown in Fig. 25, and the lens 4c ). The mask 11 may be made of, for example, stainless steel, alumina or the like, and is not particularly limited. There is no particular limitation on the height of the hole 11h, and the lens 4c may be located in the hole 11h when exposed and may be exposed outside the hole 11h. Preferably, the sealant 4c on which the lens 4c is formed is cured while leaving the mask 11 as it is. If necessary, a stopper 12 capable of restricting the movement of the mask 11 and adjusting the height of the lens 4c can be provided. For example, the thickness of the phosphor layers (4, 8) varies from 0.01 to several millimeters depending on the concentration of the phosphor contained in the encapsulating agent, and is in the range of one to ten thousand seconds in the sealing agent curing temperature range of 50 to 200 degrees Heat treatment. Thereafter, the thickness of the upper encapsulant 4 varies depending on the thickness of the lens 4c to be made, and is usually 0.01 mm to several mm. In order to form the lens 4c, the upper encapsulating agent 4 is applied in a state in which the mask 11 is placed, at a sealing agent curing temperature of 50 to 200 DEG C for one to one thousand seconds, Cure. For example, the radius of the lens 4c formed by making the sealing agent of the silicone epoxy component 0.6 mm thick may be formed to be about 0.7 mm, depending on the type and thickness of the encapsulant. The lens 4c may be formed with a plurality of lenses 4c as shown in Fig. Although there is no particular limitation on the size of the hole 11h, the hole 11h may have a size of several nanometers to tens of micrometers when a plurality of holes are formed, depending on the size of the lens 4c to be formed, When one is formed, it can have a size of several hundred micrometers to several millimeters. Holes 11h of various shapes such as elliptical, quadrangular, and triangular in cross-section are used (although a lens 11c in the form of a dome is formed as a whole) Of course. The lower encapsulant 4 and the upper encapsulant 4 may be contained in the upper encapsulant 4 or the lower encapsulant 4 as required, (If necessary, the sealing agent 4 may be applied only once). It is also possible to provide the lower encapsulant 4 and the upper encapsulant 4 with different phosphors. For example, the lower encapsulant 4 may be provided with a yellow phosphor and the upper encapsulant 4 may be provided with a longer wavelength Of orange and / or a red phosphor. The formation of the lens 4c can be done before and after the removal of the plate 1. [ Needless to say, the lens 4c can be formed before the removal of the plate 1 as in the state shown in Fig. It goes without saying that the encapsulating agent 4 may be coated and the lens 4c may be formed in a state where the insulating film 6 and / or the external electrodes 81 and 91 are formed. It goes without saying that the lens 4c can be formed with the plate 1 removed as shown in Fig. At this time, the insulating film 6 and / or the external electrodes 81 and 91 may be formed first after the plate 1 is removed. Alternatively, after the lens 4c is formed, the insulating film 6 and / 91 may be formed. When the lens 4c is formed after the insulating film 6 and / or the external electrodes 81 and 91 are formed, the lens 4c may be formed by attaching the plate 1 again, can do.

For example, in the case of the package product in which the lens 4c is formed, the lower encapsulant 4, 8 containing the phosphor is first applied and cured, the upper encapsulant 4 is applied thereon, . Thereafter, the plate 1 is removed to expose the electrodes 80 and 90, and then the plate 1 (need not be used as it is) is attached to the lens 4c side using an adhesive, (6) may be formed, or the insulating film (6) may be formed without the plate (1). Then, it is attached to the side of the electrodes 80, 90 or the side of the insulating film 6 by using the same material as the transfer tape (when the plate 1 is present, the plate 1 is removed). Thereafter, the dicing is progressed from the lens 4c side to the insulating film 6 side, and can be divided into individual packages. The plate 1 is removed after the encapsulation 4 is cured and then the insulating film 6 is placed on the exposed surface of the electrodes 80 and 90 with the new plate 1 adhered on the encapsulating material 4. [ And the electrodes 80 and 90 are transferred to the sealing member 4 while separating the plate 1 attached to the sealing member 4 after dividing the sealing member 4 by dicing toward the sealing member 4 side, It is also possible to move it to the seat.

Fig. 27 is a view for explaining the principle of forming the lens shown in Fig. 24. When the sealing agent 4 is pressed by using the mask 11 having the holes 11h formed therein, the upper part of the holes 11h is opened Therefore, the pressurized sealant 4c flows into the hole 11h, and the lens 4c is formed by the surface tension of the sealant 4c itself.

28 shows another example of the semiconductor element structure according to the present disclosure, in which the lower encapsulant 4 or the phosphor layer 8 surrounding the semiconductor element 2 has a circular cross-sectional shape. This example means that a conventional cancellous semiconductor light emitting device can be realized through the manufacturing method of a semiconductor device structure according to the present disclosure. However, a bullet type semiconductor light emitting device having a flip chip without a separate lead frame can be realized.

29 is a view showing an example of a method of manufacturing the semiconductor device structure shown in Fig. 28, in which, after forming the lens 4c through a method as shown in Fig. 24, for example, It is possible to manufacture the semiconductor device 2 by cutting the semiconductor element 2 together with the encapsulating agent 4 using a cutter 13 having a pin 13a having a circular section. At this time, as shown in Fig. 28, it is possible to cut so that the upper surface 4s of the phosphor layer 8 is exposed. There is an advantage that the shape of the lens 4c can be maintained as it is. It is needless to say that the shape of the cutter 13 is not limited to a circle but may have various shapes such as a square, an ellipse, and a triangle as necessary.

30 is a view showing another example of the semiconductor element structure according to the present disclosure, unlike the semiconductor element 2 shown in Fig. 28, the upper surface of the phosphor layer 8 is not exposed. In the case of using the method shown in Fig. 29, this type of semiconductor device structure can be manufactured by narrowing and cutting the width of the fin 13a.

31 is a view showing another example of a method of manufacturing the semiconductor device structure shown in Fig. 30, in which the phosphor layers 4 and 8 and the encapsulating agent 4 are applied, and then a cutter 13) is used to directly form the lens 4c in the cutting step without any additional process. It is possible to stably manufacture the lens 4c by giving the time for the lens 4c to harden without removing the cutter 13 directly in the cut state. It is needless to say that various combinations such as containing phosphors in both the lower encapsulant 4 and the upper encapsulant 4 are possible.

32 is a view showing another example of a cutter having a fin, in which the lower portion 13b of the pin 13a is formed wider so as to make the semiconductor device structure shown in Fig. 28 in the cutting process.

33 shows another example of a cutter having a fin, in which the cross section of the lower portion 13b of the fin 13a has a rectangular cross section unlike the round cross section of the upper portion. By using such a cutter 13, it becomes possible to make a semiconductor element structure whose lower portion is rectangular and the lens is a dome-shaped portion. It goes without saying that various combinations of upper and lower cross sections are possible.

34 is a view showing another example of a cutter having a pin in which the upper portion of the pin 13a is opened so as not to form the lens using the surface tension but the pin 13a is closed to form the lens- 13c.

35 is a view showing still another example of a method of manufacturing the semiconductor device structure shown in Fig. 30, in which the upper encapsulant 4 and the lower encapsulant 4,8 are cut at once by the cutter 13 , The cutter 13 is lowered to a certain depth to form the lens 4c first, and then the whole is cut to manufacture a semiconductor device structure.

36 is a view showing another example of a semiconductor device structure including a lens according to the present disclosure in which a lens 4c is provided on an encapsulating material 4 to form an insulating film 6 to expose exposed electrodes 800, (4). In addition, combinations of the various forms described in this disclosure are possible as a semiconductor device structure with a lens according to the present disclosure.

37 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure, in which one lens 4c and a plurality of semiconductor elements 2A and 2B are provided, And the electrodes 80A, 90A, 80B and 90B are exposed to the outside of the encapsulating agent 4. [ The plurality of semiconductor elements 2A, 2B may be a flip chip type semiconductor light emitting element. The size of the lens 4c may be such that the plurality of semiconductor elements 2A and 2B are located within the diameter of the lens 4c and the size of the lens 4c may be set to extend over a part of the plurality of semiconductor elements 2A and 2B In any case, the lens 4c functions as a common lens 4c for all of the plurality of semiconductor elements 2A, 2B, and can have various shapes according to this function. There is no particular limitation on the number of the semiconductor elements 2A, 2B, and a plurality of semiconductor elements 2A, 2B can be arranged in the width and depth direction of the semiconductor element structure. For example, two semiconductor elements may be arranged in the width direction (the direction shown in FIG. 37) and two semiconductor elements arranged in the vertical direction (depth direction) so that four semiconductor elements may be disposed under one lens See Fig. 44). For this structure, no other method is necessary, for example, by adjusting the size of the mask 11 and the cutter 13 in the above-described methods. It goes without saying that, based on the structure shown in FIG. 37, various configurations 6, 8 mentioned above can be introduced. This structure is advantageous in that even though a plurality of semiconductor elements 2A and 2B are provided under one lens 4c to generate a lot of heat in the semiconductor device structure, It is possible to easily make the lens 4c.

Fig. 38 is a diagram showing another example of a semiconductor device structure including a lens according to the present disclosure, in which electrodes 80A, 90A, 80B and 90B are exposed to the outside through an insulating film 6. Fig. The electrodes 80A, 90A, 80B and 90B may be directly connected to a circuit film or a glass, a PCB or the like by a conductive adhesive or Ag paste or metal solder. Preferably, a white insulating film 6 is provided to reflect light upward.

Fig. 39 is a diagram showing another example of a semiconductor device structure including a lens according to the present disclosure, in which a plurality of semiconductor elements 2A and 2B are surrounded by a phosphor layer 8. Fig. The phosphor layer 8 is surrounded by the sealing agent 4 provided with the lens 4c. The phosphor layer 8 can be formed by various methods described in Figs. 12 and 16-23, but is not limited thereto. The lens 4c may be formed to cover the entire upper surface of the encapsulant 4 as shown in Fig. 30, but may be formed in such a manner that the top surface 4t of the encapsulant 4 is exposed. It is possible to form the end face of the lens 4c and the end face of the sealant 4 under the lens 4c differently by using the cutter 13 described in Fig. It is possible to make the cross section circular and the cross section of the encapsulant 4 below the lens 4c to be rectangular.

40A and 40B show another example of a semiconductor device structure including a lens according to the present disclosure in which electrodes 80A and 90B of a plurality of semiconductor elements 2A and 2B are electrically connected . As described in Fig. 8, various electrical connections are possible. Preferably, the insulating film 6 is interposed between the sealing agent 4 and the external electrode 89. It goes without saying that the external electrodes may be separately provided on the electrodes 80B and 90A.

Fig. 41 is a diagram showing another example of a semiconductor device structure including a lens according to the present disclosure, in which external electrodes 81A, 81B, 91A and 91B are provided on electrodes 80A, 80B, 90A and 90B . Preferably, the insulating film 6 is interposed between the sealing agent 4 and the sealing film 4.

Fig. 42 is a view showing still another example of a semiconductor device structure including a lens according to the present disclosure, and shows an example in which the example shown in Figs. 37 to 41 is combined. Various combinations are possible.

Figs. 43 and 45 are views showing still another example of a semiconductor device structure including a lens according to the present disclosure, and Fig. 43 is a cross-sectional view taken along line A-A of the semiconductor device structure shown in Fig. The lens 4c is formed so as to be convex on the plurality of semiconductor elements 2A and 2B and forms one lens 4c as a whole.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor device structure, comprising: a plurality of semiconductor elements each having two electrodes, the semiconductor elements being flip chip type semiconductor light emitting elements; And an encapsulant encapsulating the semiconductor element so as to expose the two electrodes and integrally having a lens positioned on the plurality of semiconductor elements on the side opposite to the side where the two electrodes are exposed, Device structure.

(2) an insulating film formed on the sealing material so that two electrodes are exposed on the side where the two electrodes are exposed.

(3) The semiconductor device structure as claimed in claim 1, wherein the insulating film is a white insulating film.

(4) a phosphor layer surrounding each semiconductor element between each semiconductor element and the encapsulant.

(5) The top surface of the encapsulant around the lens is exposed.

(6) The semiconductor device structure according to any one of (1) to (4), wherein the end face of the lens is different from the end face of the encapsulant under the lens.

(7) The semiconductor device structure according to any one of (1) to (4), wherein the lens has a circular cross section and the encapsulant under the lens has a rectangular cross section.

(8) An external device for electrically connecting one of a plurality of semiconductor elements and another one of a plurality of semiconductor elements on a side where two electrodes are exposed.

(9) The semiconductor device structure according to any one of (1) to (6), wherein each of the two electrodes has an external electrode, and an insulating film is interposed between the external electrode and the sealing material.

(10) a phosphor layer surrounding each semiconductor element between each semiconductor element and the encapsulant, wherein the encapsulant top surface around the lens is exposed, the lens has a circular section, and the encapsulant under the lens Has a rectangular cross-section.

(11) The semiconductor device structure according to any one of the preceding claims, wherein the lens is convexly formed on each of the plurality of semiconductor elements.

According to one semiconductor device structure according to the present disclosure, a semiconductor device structure or a package can be easily manufactured.

Further, according to another semiconductor device structure according to the present disclosure, it becomes possible to make a structure or a package in which an encapsulant acts as a carrier.

Further, according to another semiconductor device structure according to the present disclosure, a light emitting device structure or a package in which a translucent encapsulant serves as a carrier can be manufactured.

Further, according to another semiconductor device structure according to the present disclosure, a plurality of semiconductor devices can be easily electrically connected.

Further, according to another semiconductor device structure according to the present disclosure, semiconductor devices of different structures can be easily electrically connected.

Further, according to another semiconductor device structure according to the present disclosure, a semiconductor device having a lens can be easily manufactured.

Further, according to another semiconductor device structure according to the present disclosure, a semiconductor device having a plurality of semiconductor elements and a lens can be easily manufactured.

100: substrate 200: buffer layer 300, 400, 500: semiconductor layer

Claims (11)

A method of manufacturing a semiconductor device structure,
Disposing a plurality of semiconductor elements each having two electrodes, the plurality of semiconductor elements being flip chip type semiconductor light emitting elements with two electrodes facing downward;
Enclosing the plurality of semiconductor elements to expose the two electrodes using an encapsulant; And,
Forming a lens in an encapsulant located on a plurality of semiconductor elements on the side opposite to the side where the two electrodes are exposed and cutting the encapsulant with the lens positioned on the plurality of semiconductor elements while exposing the two electrodes And < RTI ID = 0.0 > a < / RTI > semiconductor device structure. The method according to claim 1,
Wherein the step of cutting further comprises the step of forming an insulating film on the sealing material so that two electrodes are exposed on the side where the two electrodes are exposed. The method according to claim 1,
Wherein the insulating film is a white insulating film. The method according to claim 1,
Wherein the encapsulant comprises a phosphor layer. ≪ RTI ID = 0.0 > 11. < / RTI > The method according to claim 1,
Wherein the top surface of the encapsulant around the lens is exposed. The method according to claim 1,
Wherein the cross section of the lens and the encapsulant under the lens are different from each other. The method of claim 6,
Wherein the lens has a circular cross-section and the encapsulant under the lens has a square cross-section. The method according to claim 1,
Wherein the step of cutting further comprises the step of forming external electrodes electrically connecting one of the plurality of semiconductor elements and the other one of the plurality of semiconductor elements on the side where the two electrodes are exposed, Lt; / RTI > The method of claim 2,
Wherein the step of cutting further comprises the step of forming an external electrode in the encapsulating material with the insulating film interposed therebetween even when the two electrodes are exposed on the side where the two electrodes are exposed. The method according to claim 1,
The encapsulant comprises a phosphor layer surrounding each semiconductor element between each semiconductor element and the encapsulant,
The upper surface of the encapsulant around the lens is exposed,
Wherein the lens has a circular cross-section and the encapsulant under the lens has a square cross-section. The method according to claim 1,
Wherein the lens is convexly formed on each of the plurality of semiconductor elements.
KR1020130014436A 2013-01-23 2013-02-08 Method of manufacturing a semiconductor device structure KR101465708B1 (en)

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Citations (4)

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JP2004266148A (en) * 2003-03-03 2004-09-24 Toyoda Gosei Co Ltd Light emitting device and manufacturing method thereof
KR20100060867A (en) * 2008-11-28 2010-06-07 삼성전기주식회사 Method of manufacturing wafer level package
KR100986468B1 (en) * 2009-11-19 2010-10-08 엘지이노텍 주식회사 Lense and light emitting apparatus including the lense
KR20120032899A (en) * 2010-09-29 2012-04-06 삼성엘이디 주식회사 Light emitting diode package and manufacturing method for the same

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2004266148A (en) * 2003-03-03 2004-09-24 Toyoda Gosei Co Ltd Light emitting device and manufacturing method thereof
KR20100060867A (en) * 2008-11-28 2010-06-07 삼성전기주식회사 Method of manufacturing wafer level package
KR100986468B1 (en) * 2009-11-19 2010-10-08 엘지이노텍 주식회사 Lense and light emitting apparatus including the lense
KR20120032899A (en) * 2010-09-29 2012-04-06 삼성엘이디 주식회사 Light emitting diode package and manufacturing method for the same

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