KR101543725B1 - Manufacturing method of semiconductor light emitting device - Google Patents

Manufacturing method of semiconductor light emitting device Download PDF

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Publication number
KR101543725B1
KR101543725B1 KR1020130101851A KR20130101851A KR101543725B1 KR 101543725 B1 KR101543725 B1 KR 101543725B1 KR 1020130101851 A KR1020130101851 A KR 1020130101851A KR 20130101851 A KR20130101851 A KR 20130101851A KR 101543725 B1 KR101543725 B1 KR 101543725B1
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KR
South Korea
Prior art keywords
emitting device
semiconductor light
light emitting
photo
device chip
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KR1020130101851A
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Korean (ko)
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KR20150024658A (en
Inventor
전수근
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020130101851A priority Critical patent/KR101543725B1/en
Priority to PCT/KR2014/007968 priority patent/WO2015030481A1/en
Publication of KR20150024658A publication Critical patent/KR20150024658A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

According to the present invention, there is provided a method of manufacturing a semiconductor light emitting device, comprising the steps of: placing a semiconductor light emitting device chip that generates light using recombination of electrons and holes in a substrate; Encapsulating the semiconductor light emitting device chip with a light transmitting material; Forming a colored protective layer in contact with the light transmitting material while opening upper and lower portions of the semiconductor light emitting device chip; And a step of placing on the semiconductor light emitting device chip a photo-conversion material-containing layer containing a photo-conversion material for converting the light generated in the semiconductor light-emitting device chip into light of another wavelength. ≪ / RTI >

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a semiconductor light-

Here, the semiconductor light emitting device means a semiconductor optical device such as an LED (Light Emitting Diode) or an LD (Laser Diode) that generates light through recombination of electrons and holes, and may be a group III nitride semiconductor light emitting device. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 is a diagram showing an example of a conventional semiconductor light emitting device chip. The semiconductor light emitting device chip includes a substrate 100, a buffer layer 200, a first semiconductor having a first conductivity An active layer 400 that generates light through recombination of electrons and holes and a second semiconductor layer 500 that has a second conductivity different from the first conductivity are sequentially deposited on the layer 300, And an electrode 700 serving as a bonding pad are formed on the first semiconductor layer 300. An electrode 800 serving as a bonding pad is formed on the first semiconductor layer 300 exposed and etched.

2 is a view showing an example of a semiconductor light emitting device chip (Flip Chip) disclosed in U.S. Patent No. 7,262,436. The semiconductor light emitting device chip includes a substrate 100 (e.g., a sapphire substrate) An active layer 400 (e.g., InGaN / (In) GaN MQWs) that generates light through recombination of electrons and holes, a first semiconductor layer 300 (e.g., n-type GaN layer) And a second semiconductor layer 500 (e.g., a p-type GaN layer) having a second conductivity are sequentially deposited on the substrate 100. A three-layered electrode film 901 (e.g., Ag And an electrode film 903 (e.g., an Au bonding layer) are formed on the first semiconductor layer 300. The electrode 902 (e.g., Ni diffusion prevention film) 800; for example, a Cr / Ni / Au laminated metal pad). Here, when the electrode film 903 side is placed in the package, it functions as a mounting surface. It is also possible to use a dielectric laminate structure as a reflective film (e.g., a DBR made of SiO 2 / TiO 2 ) instead of the metal reflective films 901, 902, and 903 (e.g., Japanese Laid-Open Patent Publication No. 2006-120913). An example of a method of forming a phosphor on such a semiconductor light emitting device chip is disclosed in U.S. Patent No. 6,650,044.

3 is a diagram illustrating a conventional semiconductor light emitting device. The semiconductor light emitting device includes lead frames 110 and 120, a mold 130, and a vertical type light emitting device chip 150 in a cavity 140. [ emitting chip (chip) shown in FIGS. 1 and 2 may be provided on the upper surface of the cavity 140. The cavity 140 may include a phosphor 160 to function as a light conversion unit, Is filled with an encapsulating material 170 containing the above-mentioned polymer. The lower surface of the vertical semiconductor light emitting device chip 150 is electrically connected to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wires 180. A part of the light (for example, blue light) emitted from the vertical semiconductor light emitting device chip 150 excites the phosphor 160 so that the phosphor 160 makes light (for example, yellow light), and these lights (blue light + This produces white light. Here, the mold 130, the encapsulant 170, or the lead frames 110 and 120, the mold 130, and the encapsulant 170 may be stacked on the support of the semiconductor light emitting device package, (Carrier). In implementing such a semiconductor light emitting device, a technique of precipitating the fluorescent material 160 to improve the uniformity of light emitted to the outside has been proposed (for example, US Patent No. 6,960,878).

4 is a view for explaining a problem accompanying the sedimentation of a phosphor. The base 10 includes a base 10, a semiconductor light emitting device chip 20 placed on the base 20, and a semiconductor light emitting device chip 20 on the base 10. [ An encapsulating material 30 is shown. The encapsulant 30 is uniformly distributed in the phosphor 31. [ 4, the phosphor 31 can be settled in the encapsulant 30 using a suitable encapsulating material 30 curing condition. At this time, the thickness t 1 of the sealing material 30 in the region A on the semiconductor light-emitting device chip 20 is smaller than the thickness t 1 of the sealing material 30 in the region B in which the semiconductor light- Since thinner than 2), that is, the area (a) smaller than the volume of the region (B) phosphors 31 of the above amount of the fluorescent substance 31 in the above, after sedimentation is complete, the phosphor settling in the region (a) ( The amount of the phosphor 31 precipitated in the region 31 and the amount of the phosphor 31 precipitated in the region B may be different from each other, resulting in unevenness of light emitted from the semiconductor light emitting element to the outside and / or deterioration of the light conversion efficiency of the phosphor 31, There is a problem that a large amount of phosphors are used.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, the method comprising: disposing a semiconductor light emitting device chip that generates light using recombination of electrons and holes in a substrate; Encapsulating the semiconductor light emitting device chip with a light transmitting material; Forming a colored protective layer in contact with the light transmitting material while opening upper and lower portions of the semiconductor light emitting device chip; And a step of placing on the semiconductor light emitting device chip a photo-conversion material-containing layer containing a photo-conversion material for converting the light generated in the semiconductor light-emitting device chip into light of another wavelength. Method is provided.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip (lateral chip)
2 is a view showing an example of a semiconductor light emitting device chip (Flip Chip) disclosed in U.S. Patent No. 7,262,436,
3 is a view showing another example of a conventional semiconductor light emitting device,
4 is a view for explaining a problem accompanying the settling of a phosphor,
5 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
6 to 8 illustrate various combinations of the sublimation control layer and the photoconversion material-containing layer structure,
9 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
10 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
11 to 12 are views showing other examples of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
Figures 13 to 15 show various combinations of the photo-conversion material-containing layer and the colored protective layer,
16 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
17 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
18 to 23 are views showing still another example of a method for manufacturing a semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawings.

5 is a view showing an example of a semiconductor light emitting device according to the present disclosure in which a semiconductor light emitting device is provided with a semiconductor light emitting device chip 20 and a light converting material containing layer 33), and a sedimentation control layer 32 containing a photo-conversion material 31 that is precipitated from the photo-conversion material-containing layer 33. As the semiconductor light emitting device chip 20, a semiconductor light emitting device chip having the shape shown in FIGS. 1 to 3 may be used, and a semiconductor light emitting device chip made of a group III nitride semiconductor may be used. The photo-conversion material 31 may be any material as long as it converts light generated from the active layer of the semiconductor light-emitting device chip into light of a different wavelength (for example, pigment, dye, etc.) , (Sr, Ba, Ca) 2 SiO 4: Eu is preferred to use, and so on). The light conversion material layer 33 may further contain a light scattering material and the like. As the photo-conversion material layer 33, an epoxy resin, a silicone resin, and the like generally used in the field of semiconductor light emitting devices can be used. The same material as that of the photo-conversion-containing layer 31 may be used as the deposition control layer 32, and it is also possible to use a material having a different viscosity and / or a different curing speed as required. The semiconductor light emitting device chip 20 is placed on the substrate 10 and then the deposition control layer 32 is formed (for example, dispensing, stencil, screen printing, spin coating, etc.) ) Is formed by a method such as spraying, stencil, screen printing, spun coating, or dispensing. From the viewpoints of the uniformity of the thickness and the inner density of the phosphor, spray coating is preferable. Since the material constituting the deposition control layer 32 and the photo-conversion material-containing layer 33 is generally a thermosetting resin, the deposition control layer 32 is formed and then the deposition control layer 32 is formed before the deposition control layer 32 is cured, Containing material layer 33 is formed while the layer 32 is not cured so that the photo-conversion material 31 is cured to be precipitated from the photo-conversion material containing layer 33 to the precipitation control layer 32 Keep the condition. Although natural sedimentation is not impossible, it is common to adjust the temperature so that sedimentation occurs well, and this sedimentation process is a process commonly used by those skilled in the art. Generally, in the case of silicon, the viscosity becomes weaker than room temperature when the curing temperature is 40 to 90 ° C., and liquefaction is performed. After passing through the section, the hardness is strengthened again. By regulating the temperature and time at which liquefaction occurs, And if the binder does not include a binder in the silicon, the deposition rate may be faster. For example, the sedimentation process can be performed at a temperature of 50 to 80 DEG C for 10 to 60 minutes.

The base material 10 may or may not constitute a part of the semiconductor light emitting device. In the case where the substrate 10 constitutes a part of the semiconductor light emitting device, the lead frame of Fig. 3, the PCB on which the electric pattern is formed, the submount, or the like may be an example of the substrate 10. In the case where the substrate 10 does not constitute a part of the semiconductor light emitting device, after the settling and curing are completed, the substrate 10 is removed, and the deposition control layer 32 ) And the photo-conversion-material-contained layer 33 are cut off, thereby making it possible to constitute a single semiconductor light-emitting element (see Fig. 9). This method has an advantage particularly when a semiconductor light emitting device chip 20 in the form of a flip chip, in which two electrodes 21 can be exposed to the side of the deposition control layer 32, is advantageous. It is also possible to cut the substrate 10 and leave the adjustment layer 32 and the photo-conversion material-containing layer 33 as they are. Therefore, the semiconductor light emitting device according to the present disclosure may have various shapes such as a shell type package, a SMD (Surface Mounted Device) type package, a COB (Chip on Board) type package, (32) and a photo-conversion material-containing layer (33).

Those skilled in the art will appreciate that the photo-conversion agent 31 does not necessarily have to settle down to the bottom surface. 5, the density or the concentration of the photo-conversion agent 31 within the thickness t 1 of the region A is larger than the density or the concentration of the photo-conversion agent 31 within the thickness t 2 of the region B, Is greater than the density or concentration of < / RTI > Assuming that the density or the concentration of the photo-conversion material 31 injected into the photo-conversion material layer 33 is uniform as a whole, the total number of the photo-conversion materials 31 in both areas A and B is similar, That is, the volume is different and the density or the concentration is different.

6 to 8 sedimentation control layer and the light conversion material as or inaction illustrates various combinations of containing layer configuration, Figure 6, the thickness of the thickness (t 4) and the light conversion material-containing layer 33 of the settling control layer 32 (t 3) that has been presented the same example, Fig. 7, the area (a) has been shown above, the thickness (t 1) and the same example of the thickness (t 4) of the settling control layer 32, the settling control 8 The thickness of the layer 32 is less than the height of the semiconductor light emitting device chip 20 (the thickness of the layer 33 is only covering a part of the semiconductor light emitting device chip 20) And the light-converting material 31 and the light-converting material and / or the light-scattering material 34 separately from the light-converting material 31 contained in the light-converting material- It is possible to control the content of the photo-conversion material 33, the distribution density in the precipitation control layer 32 and the photo-conversion material-containing layer 33, the settling time, and the like through such constitutive combination, viscosity of both, .

10 shows an example of another semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device has a colored protective layer 35 in place of the settling control layer 32. FIG. The color conversion material layer 33 is formed on the colored protective layer 35 by introducing such a colored protective layer 35 so that the light conversion material 31 on the side of the semiconductor light emitting device chip 20 is unnecessarily You can prevent it from being used a lot. The photo-conversion-containing layer 33 may be formed by the above-described method, for example, by spray coating, or by dispensing, screen printing, or stencil. In addition, the photo-conversion material 31 can be settled. The sedimentation can function to uniformize the distribution of the photo-conversion material 31 downward in the photo-conversion material-containing layer 33 to make the total light emission of the light-emitting device uniform. The colored protective layer 35 primarily functions to reduce the amount of the photo-conversion material 31 but additionally and preferably has a function of reflecting light generated from the semiconductor light-emitting device chip 20, It has a color, that is, a color that does not transmit light. From this point of view, it is preferable that the colored protective layer 35 is made of a white material (for example, white silicon). 10, the colored protective layer 35 surrounds the upper surface 20a and the lower portion 20b of the semiconductor light emitting device chip 20 so as to be in contact with the side surface 20c of the semiconductor light emitting device chip 20. [ The upper portion 20a and the lower portion 20b of the semiconductor light emitting device chip 20 are also upper and lower portions of the colored protective layer 35. [ The semiconductor light emitting device chip 20 of various flip chip types described with reference to FIG. 2 can be used. In this case, the two electrodes 21 and 21 of the semiconductor light emitting device chip 20 are connected to a colored protective layer 35 through the lower portion 20b. Here, the exposure means exposure in the relationship between the semiconductor light emitting device chip 20 and the colored protective layer 35, and does not mean exposure through the substrate 10 or removal of the substrate 10. The substrate 10 may have a shape similar to that described above and may be removed.

11 to 12 show other examples of a method of manufacturing the semiconductor light emitting device according to the present disclosure. In FIG. 11, after the substrate 10 is removed, the semiconductor light emitting device chip 20, the colored protective layer 35, and the photo-conversion-material-containing layer 33 is cut. In FIG. 12, the substrate 10 is left as it is. In this case, the substrate 10 and the semiconductor light emitting device chip 20 may be formed by a method such as wire bonding, conductive paste, eutectic bonding or the like according to the shape of the semiconductor light emitting device chip 20 20 can be electrically communicated.

13 to 15 show various combinations of the photo-conversion material-containing layer and the colored protective layer. In Fig. 13, the upper surface 35d of the colored protective layer 35 is formed on the upper surface 14 shows a semiconductor light emitting device in which the upper surface 35d of the colored protective layer 35 is placed on the upper surface 20d of the semiconductor light emitting device chip 20, 15 shows a semiconductor light emitting device having a sloped surface 36 chamfered at the side where the colored protective layer 35 and the semiconductor light emitting device chip 20 meet. In each of the semiconductor light emitting devices, a colored protective layer 35 is formed, and then the colored protective layer 35 is formed through mechanical polishing, dry etching, wet etching, or a combination thereof . The inclined surface 36 can be formed through such active etching since the etching is actively performed at the vertex in the process of forming the colored protective layer 35 shown in FIG.

16 is a diagram showing another example of the semiconductor light emitting device according to the present disclosure in which the semiconductor light emitting device 20 is provided with a coating layer or a coating layer 37 on the semiconductor light emitting device chip 20 and a colored protective layer 35 And is in contact with the semiconductor light-emitting device chip 20 via the coating layer 37. Preferably, the coating layer 37 is formed of a light-transmissive material (e.g., transparent silicone) to reduce the absorption of light by the colored protective layer 35. For example, a material having a refractive index lower than 1.6 may be used. The coating layer 37 is formed by various methods such as dispensing, spray coating, and spin coating, and may be conformal-coated when spray coating or spin coating is used. Here, the conformal coating means that the inner and outer surfaces of the coating layer 37 follow the outer shape of the semiconductor light emitting device chip 20 as they are, and the coating does not have a special meaning and has a meaning of covering. The coating layer or coating layer 37 may also contain a photo-conversion agent, the concentration of which may be lower than the photo-conversion material-containing layer 33. It is also possible that the photo-conversion material 31 is precipitated from the photo-conversion material containing layer 33 and that the photo-conversion material is settled therein.

17 is a view showing still another example of the semiconductor light emitting device according to the present disclosure. In the semiconductor light emitting device, in addition to the colored protective layer 35, the semiconductor light emitting device chip 20 placed on the substrate 10 is sealed encapsulating translucent material. The upper portion 20a and the lower portion 20b of the semiconductor light emitting device chip 20 are opened without being covered by the colored protective layer 35 so that light can be transmitted therethrough, A photo-conversion-material-containing layer 33 is formed. As described above, the colored protective layer 35 is preferably provided in white. Transparent material 38 may be formed of the same method and the same material as deposition control layer 32, and may additionally comprise a photo-conversion material. 17, the height of the light-transmitting material 38 and the height of the colored protective layer 35 are higher than the height of the semiconductor light-emitting device chip 20, but as shown in Figs. 10 and 13, . It will be understood by those skilled in the art that the light transmitting material 38 does not necessarily seal up to the upper portion 20a of the semiconductor light emitting device chip 20. [ With this configuration, it is possible to reduce the amount of light consumed by the photo-conversion material 31 while reducing the absorption of light by the colored protective layer 35.

18 to 23 illustrate another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. As shown in FIG. 18, first, a semiconductor light emitting device chip 20 , 20 are placed, and then the semiconductor light emitting device chip 20 is sealed with the light transmitting material 38. As described above, the light transmitting material 38 (e.g., epoxy resin, silicone resin) may be formed by a method such as dispensing, stencil, screen printing, spin coating or the like. Next, as shown in Fig. 19, a gap 38a is formed in the light transmitting material 38 to separate the light transmitting material 38. Then, as shown in Fig. the gap 38a may be formed up to the substrate 10 but not so as to reach the substrate 10 as in (b). The gap 38a may be formed by sawing using a blade, pressing using a sharp tip, or the like. 20, the external force F is applied in four directions so as to widen the gap 38a or to keep the semiconductor light emitting device chips 20 and 20 away from each other. For example, the substrate 10 may be made of a flexible material such as a blue tape, and then the substrate 10 may be tensioned beyond one direction in which the gap 38a can be widened to apply an external force F have. In this case, it is possible to reduce the consumption of the light transmissive material 38 and the photo-conversion material contained therein, as compared with the case of using a wide-width blade. Next, as shown in Fig. 21, a colored protective layer 35 is formed in the gap 38a. The colored protective layer 35 may be formed by a method such as distensing or screening, or may be formed using a mold. Finally, as shown in Fig. 17, a photo-conversion material-containing layer 33 is formed. If necessary, the colored protective layer 35 may be cut so that the semiconductor light emitting device chip 20 is included using the blade 40, as shown in FIG. 23, the light transmissive material 38 may contain a photo-conversion material or a light scattering material 39 separately from the photo-conversion material 31, and the substrate 10 may be removed, 10 can be cut off by using a blade, a string, etc.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; An encapsulant containing a photo-conversion material for converting light generated in the semiconductor light-emitting device chip into light of another wavelength and covering the semiconductor light-emitting device chip, wherein the photo-conversion re-density in the region above the semiconductor light- Is higher than the light conversion density in a region where the semiconductor light emitting device chip is not located. Here, the encapsulant refers to a cover layer made of a single material or a plurality of materials surrounding the semiconductor light emitting device chip literally. For example, the resin material may be formed by dispensing a resin material not containing a phosphor and then dispensing a resin material of the same material continuously containing the phosphor. Alternatively, a resin material not containing a phosphor may be dispensed, Or by applying a phosphor or a phosphor layer by spray coating, and may be formed by various methods.

(2) The semiconductor light emitting device according to (2), wherein the sealing material is thinner than a thickness of a region on the semiconductor light emitting device chip where the semiconductor light emitting device chip is not located.

(3) The encapsulating material comprises a photo-conversion material-containing layer containing a photo-conversion material and a sedimentation-controlling layer containing a photo-conversion material which is located below the photo-conversion material- Light emitting element.

(4) A semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; A photo-conversion material-containing layer containing a photo-conversion material for converting light generated in the semiconductor light-emitting device chip into light of another wavelength; And a subsidence control layer which is located below the photo-conversion material-containing layer and contains a photo-conversion material precipitated from the photo-conversion material-containing layer.

(5) The semiconductor light emitting device according to any one of (1) to (5), wherein the light conversion material comprises a phosphor.

(6) The semiconductor light-emitting device according to (6), wherein the photo-conversion material containing layer and the deposition control layer are made of the same material. With such a configuration, the problem of the related art can be solved, and a semiconductor light emitting device made of the same sealing material as that of the related art can be realized.

(7) The semiconductor light emitting device according to any one of (1) to (5), wherein the viscosity of the precipitation control layer is lower than that of the photoconversion material layer. With this configuration, it is possible to reduce the settling time of the photo-conversion material as compared with the prior art.

(8) The semiconductor light emitting device according to (8), wherein the sedimentation control layer contains a photo-conversion material separately from the photo-conversion material precipitated from the photo-conversion material-containing layer. For example, the photo-conversion material of the photo-conversion material-containing layer may be a yellow phosphor and the other photo-conversion material in the sedimentation control layer may be a red or green phosphor.

(9) A method of manufacturing a semiconductor light emitting device, the method comprising: placing a semiconductor light emitting device chip for generating light using recombination of electrons and holes in a substrate; Forming a deposition control layer to surround at least a part of the semiconductor light emitting device chip; Forming a photo-conversion material-containing layer containing a photo-conversion material for converting light generated in the semiconductor light-emitting device chip into light of another wavelength on the deposition control layer; And precipitating the photo-conversion material in the photo-conversion material-containing layer into the deposition control layer. It is needless to say that the photo-conversion material-containing layer can be composed solely of the photo-conversion material itself. For example, the present disclosure does not exclude that a phosphor is applied onto a sedimentation control layer and then sedimented.

(10) cutting the precipitating control layer and the photo-conversion material-containing layer so as to include at least one semiconductor light-emitting device chip. In Fig. 9, the chips are cut one by one, but it is also possible to cut a plurality of chips as necessary.

(11) separating the substrate from the deposition control layer prior to the step of cutting.

(12) The method of manufacturing a semiconductor light emitting device according to (12), wherein the semiconductor light emitting device chip is a flip chip in which an electrode is exposed as a subsidence control layer.

(13) A method of manufacturing a semiconductor light emitting device, wherein the light conversion material comprises a phosphor.

(14) A semiconductor light emitting device comprising: a semiconductor light emitting device chip for generating light by recombination of electrons and holes; A colored protective layer surrounding the semiconductor light emitting device chip so as to be in contact with the semiconductor light emitting device chip while opening upper and lower portions thereof; And a photo-conversion material-containing layer formed on the semiconductor light-emitting device chip and containing a photo-conversion material for converting light generated in the semiconductor light-emitting device chip into light of another wavelength.

(15) A semiconductor light-emitting device characterized in that the colored protective layer is a white protective layer.

(16) The semiconductor light emitting device according to any one of (1) to (4), wherein the upper surface of the colored protective layer is located below the upper surface of the semiconductor light emitting device chip.

(17) The semiconductor light emitting device according to any one of (1) to (4), wherein the upper surface of the colored protective layer is located on the upper surface of the semiconductor light emitting device chip.

(18) The semiconductor light emitting device according to any one of (18) to (20), wherein the upper surface of the colored protective layer is chamfered on the side where the upper surface of the colored protective layer meets the upper surface of the semiconductor light emitting device chip.

(19) The semiconductor light emitting device according to any one of the preceding claims, further comprising a coating layer conformally coated on the semiconductor light emitting device chip, wherein the colored protective layer is in contact with the semiconductor light emitting device chip through the coating layer.

(20) A semiconductor light emitting device, further comprising a substrate on which a semiconductor light emitting device chip and a colored protective layer are placed.

(21) The lower surface of the semiconductor light emitting device chip is exposed through the lower portion of the colored protective layer.

(22) The semiconductor light emitting device according to claim 1, wherein two electrodes of the semiconductor light emitting device chip are exposed through a lower portion of the colored protective layer.

(23) The semiconductor light emitting device according to (23), wherein the colored protective layer is a white protective layer, and two electrodes of the semiconductor light emitting device chip are exposed through a lower portion of the colored protective layer.

(24) placing a semiconductor light-emitting device chip that generates light using recombination of electrons and holes on a substrate; Surrounding the semiconductor light emitting device chip with a colored protective layer; And placing a photo-conversion material-containing layer containing a photo-conversion material for converting light generated in the semiconductor light-emitting device chip into light of another wavelength, on an open top of the semiconductor light-emitting device chip. A method of manufacturing a light emitting device.

(25) A method for manufacturing a semiconductor light emitting device, comprising: cutting a color protective layer and a photo-conversion material-containing layer so that the semiconductor light emitting device chip is included.

(26) separating the substrate from the colored protective layer prior to the cutting step.

(27) A method for manufacturing a semiconductor light emitting device, wherein the semiconductor light emitting device chip is a flip chip in which the electrode is located on the opposite side of the photo-conversion material-containing layer.

Further comprising the step of forming a coating layer on the semiconductor light emitting device chip prior to the step of encapsulating the semiconductor light emitting device chip.

(29) A method of manufacturing a semiconductor light emitting device, the method comprising: placing a semiconductor light emitting device chip for generating light by recombination of electrons and holes in a substrate; Encapsulating the semiconductor light emitting device chip with a light transmitting material; Forming a colored protective layer in contact with the light transmitting material while opening upper and lower portions of the semiconductor light emitting device chip; And a step of placing on the semiconductor light emitting device chip a photo-conversion material-containing layer containing a photo-conversion material for converting the light generated in the semiconductor light-emitting device chip into light of another wavelength. Way.

(30) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, further comprising the step of separating the light transmitting material so as to form a gap before forming the colored protective layer.

(31) further comprises a step of placing a plurality of semiconductor light-emitting device chips on a substrate, and applying an external force in a direction in which the plurality of semiconductor light-emitting device chips are separated from each other, prior to the step of forming a colored protective layer A method of manufacturing a semiconductor light emitting device.

(32) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, further comprising the step of applying an external force to the translucent material to widen the gap before forming the colored protective layer.

(33) The method for producing a semiconductor light emitting device, wherein the colored protective layer is a white protective layer.

(34) The method of producing a semiconductor light-emitting device according to (31), wherein the colored protective layer is a white protective layer.

(35) A method of manufacturing a semiconductor light emitting device, comprising: cutting a colored protective layer to include a semiconductor light emitting device chip.

Further comprising the step of separating the substrate from the colored protective layer prior to the cutting step (36).

(37) A method of manufacturing a semiconductor light-emitting device, wherein the light-transmitting material further contains a photo-conversion material.

(38) A method of manufacturing a semiconductor light emitting device, wherein the semiconductor light emitting device chip is a flip chip in which the electrode is located on the opposite side of the photo-conversion material-containing layer.

According to one semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, it is possible to solve a problem in sinking a light conversion material caused by the presence of a semiconductor light emitting device chip in an encapsulant.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, the consumed amount of the light conversion material can be reduced.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, it is possible to improve the uniformity and / or the light conversion efficiency of light taken out to the outside through uniform settling of the light converting member.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, it is possible to reduce the consumption amount of the light conversion material and reflect the light to the upper part of the semiconductor light emitting device.

According to another semiconductor light emitting device and a method of manufacturing the same according to the present disclosure, it is possible to reduce the consumption of the light conversion material and reduce the light absorption by the colored protective layer.

20: semiconductor light emitting device chip 32: settling adjuster 33: photo-conversion material-containing layer

Claims (10)

A method of manufacturing a semiconductor light emitting device,
Placing a semiconductor light emitting device chip that generates light using recombination of electrons and holes in a substrate;
Encapsulating the semiconductor light emitting device chip with a light transmitting material;
Forming a colored protective layer in contact with the light transmitting material while opening upper and lower portions of the semiconductor light emitting device chip; And,
Placing a photo-conversion material-containing layer containing a photo-conversion material on the semiconductor light-emitting device chip for converting light generated in the semiconductor light-emitting device chip into light of another wavelength,
Separating the light transmitting material so that a gap is formed, prior to the step of forming a colored protective layer,
A plurality of semiconductor light-emitting device chips are placed on a substrate,
Further comprising the step of applying an external force to the translucent material so that a gap is widened in a direction in which the plurality of semiconductor light-emitting device chips are separated from each other, prior to the step of forming the colored protective layer. delete delete delete The method according to claim 1,
And the colored protective layer is a white protective layer. delete The method according to claim 1,
And cutting the colored protective layer to include the semiconductor light emitting device chip. The method of claim 7,
Further comprising the step of separating the substrate from the colored protective layer prior to the step of cutting. The method according to claim 1,
Wherein the light-transmitting material further contains a photo-conversion material. The method according to claim 1,
Wherein the semiconductor light emitting element chip is a flip chip in which the electrode is located on the opposite side of the photo-conversion material-contained layer.
KR1020130101851A 2013-08-27 2013-08-27 Manufacturing method of semiconductor light emitting device KR101543725B1 (en)

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Citations (3)

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JP2009124043A (en) * 2007-11-16 2009-06-04 Toyoda Gosei Co Ltd Light-emitting device
JP2012069577A (en) * 2010-09-21 2012-04-05 Citizen Electronics Co Ltd Semiconductor light-emitting device and method of manufacturing the same
KR101180134B1 (en) * 2008-05-30 2012-09-05 도시바 마테리알 가부시키가이샤 White light led, and backlight and liquid crystal display device using the same

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JP2009124043A (en) * 2007-11-16 2009-06-04 Toyoda Gosei Co Ltd Light-emitting device
KR101180134B1 (en) * 2008-05-30 2012-09-05 도시바 마테리알 가부시키가이샤 White light led, and backlight and liquid crystal display device using the same
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