JP6065408B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a light emitting device that can be used as a light source of a display device or a lighting device, and a method for manufacturing the same.

  Conventionally, a light-emitting device using a semiconductor element such as a light-emitting diode (LED) has been proposed as a light source of a display device or a lighting device. A light emitting device using such an LED has a longer lifetime and higher luminous efficiency than conventional light emitting devices such as a light bulb and a fluorescent lamp. Therefore, a light emitting device using LEDs leads to energy saving, and has attracted attention as environmental awareness is increasing.

  In particular, in the field of lighting devices, there is a high demand for the light quality of white light, and a light emitting device with little color unevenness, brightness unevenness and the like is eagerly desired. However, in general, a light emitting device that whitens a yellow light emitting phosphor by mixing a blue light emitting element with a white color is difficult to extract uniform white light, and in particular, an area where the light emitting element is arranged and other areas. It is very difficult to reduce the difference in luminance and the difference in color. In addition, since a high output is required in the field of lighting devices, a plurality of light emitting elements are often mounted. However, when a plurality of light emitting elements are used in this way, a region on the substrate where the light emitting elements are arranged. As a result, a difference in luminance and a difference in color from a region where no light-emitting element is arranged on the substrate are prominent.

  As a light-emitting device used in the illumination device, for example, a light-emitting device as disclosed in Patent Document 1 has been conventionally proposed. That is, in Patent Document 1, in order to make the rise of the front luminance distribution steep and reduce emission color unevenness, a bridge portion made of a resin to which a light reflective (titanium oxide, alumina) filler is added is provided between the light emitting elements. There has been proposed a light emitting device that is disposed and in which a wavelength conversion layer is formed so as to integrally cover the light emitting element and the bridge portion. Note that the bridge portion of the light emitting device maintains the surface tension of the material mixture of the wavelength conversion layer dripped onto the light emitting element so as to make the film thickness of the wavelength conversion layer uniform, and obliquely from the light emitting element. It is provided to reflect the emitted light so as to spread in the direction.

  In addition, after arranging a plurality of light emitting elements 120 on the substrate 110 and connecting the plurality of light emitting elements 120 and the wiring conductors 130 with wires 140, for example, as shown in FIG. There has also been proposed a light emitting device 101 in which a translucent sealing resin 160 containing a phosphor 151 is applied so as to cover a plurality of light emitting elements 120 and the phosphor 151 is deposited on the light emitting element 120. The light emitting device 101 includes a YAG phosphor that emits yellow light when the light emitting element 120 emits blue light and the phosphor 151 is excited by blue light emitted from the light emitting element 120. The light emitting device 101 is configured so that the blue light emitted from the light emitting element 120 and the yellow light emitted from the phosphor 151 are mixed to extract white light.

JP 2010-93208 A

  Here, the light-emitting device proposed in Patent Document 1 extracts only light from the upper surfaces of a plurality of light-emitting elements. In the first place, in the light emitting device proposed in Patent Document 1, since the phosphor is dispersed in the wavelength conversion layer without being settled, there is a distance between the light emitting element and each phosphor, and the light emission. There was a problem that light from the element could not enter the phosphor without leakage. Furthermore, the light emitting device proposed in Patent Document 1 is attenuated before the light from the light emitting element reaches the phosphor due to the difference in refractive index between the light emitting element and the wavelength conversion layer. There was a problem.

  Further, as shown in FIG. 8A, the light emitting device 101 has a plurality of light emitting elements 120 arranged on the substrate 110, so that a gap is always generated between the light emitting elements 120. As shown in FIG. 8A, when the phosphor 151 contained in the sealing resin 160 is settled, the light-emitting device 101 fluoresces not only on the light-emitting elements 120 but also in the gaps between the light-emitting elements 120. The body 151 will adhere. Further, as shown in FIG. 8A, not only when the light emitting elements 120 are provided, but also when only one light emitting element 120 is provided, the phosphor around the light emitting elements 120 is similarly provided. 151 will adhere.

  Then, when the light emitting element 120 is energized and emits light in such a state, as shown in FIG. 8B, in the region on the upper surface 120a side of the light emitting element 120, the blue light emitted from the upper surface 120a of the light emitting element 120 and The yellow light emitted from the phosphor 151 excited by the blue light is mixed and white light (solid arrow in FIG. 8B) is extracted.

  On the other hand, as shown in FIG. 8B, in the region other than the upper surface 120a side of the light emitting element 120, the phosphor 151 has settled in the gap between the light emitting elements 120, so the blue light emitted from the side surfaces 120b and 120b. The light (dashed line arrow in FIG. 8B) does not sufficiently hit the phosphor 151, and as a result, it looks yellow. Therefore, in the light emitting device 101, a yellow linear region is formed in the gap between the light emitting elements 120 by the phosphor 151, which causes color unevenness. In addition, the light emitting device 101 has a low luminance because the amount of blue light emitted from the gap between the light emitting elements 120 is small compared to the amount of blue light emitted from the upper surface 120a side of the light emitting element 120. It was a cause of uneven brightness.

  The present invention has been made in view of the above problems, and reduces color unevenness and luminance unevenness between a region where a light emitting element is disposed on a substrate and a region where a light emitting element is not disposed on the substrate. It is an object to provide a light-emitting device that can be used and a method for manufacturing the same.

  In order to solve the above problems, a method for manufacturing a light-emitting device according to the present invention is a method for manufacturing a light-emitting device including a plurality of light-emitting elements and a substrate on which the plurality of light-emitting elements are disposed. A first resin application step of applying a translucent first resin having a predetermined viscosity between the plurality of light emitting elements mounted; and the first resin application step on the plurality of light emitting elements and the first resin. A second resin application step of applying a translucent second resin having a viscosity lower than that of one resin and containing a phosphor in a state where the first resin is not cured; And a phosphor precipitation step of precipitating the phosphor contained in the second resin on the first resin.

  In the method for manufacturing a light emitting device that performs such a procedure, in the first resin application step, the first resin is applied so as to fill the gaps between the light emitting elements, and in the second resin application step, the viscosity is higher than that of the first resin. A second resin that is low and contains a phosphor is applied over the light emitting element and the first resin. For this reason, in the method for manufacturing a light emitting device, since the sedimentation of the phosphor contained in the second resin stops at the boundary between the first resin and the second resin, continuous fluorescence on the light emitting element and the first resin is continuous. A body layer can be formed.

  In order to solve the above problems, a method for manufacturing a light emitting device according to the present invention is a method for manufacturing a light emitting device including one light emitting element and a substrate provided with the one light emitting element, A first resin application step of applying a translucent first resin having a predetermined viscosity around the light emitting element mounted thereon; and the first resin on the light emitting element and the first resin. A second resin coating step of applying a translucent second resin having a lower viscosity and containing a phosphor in a state where the first resin is not cured; and on the light emitting element and the first resin. And a phosphor sedimentation step of sedimenting the phosphor contained in the second resin.

  In the method for manufacturing a light emitting device that performs such a procedure, in the first resin application step, the first resin is applied so as to fill the side surface of the light emitting element, and in the second resin application step, the viscosity is lower than that of the first resin. And the 2nd resin containing fluorescent substance is apply | coated from on a light emitting element and 1st resin. For this reason, in the method for manufacturing a light emitting device, since the sedimentation of the phosphor contained in the second resin stops at the boundary between the first resin and the second resin, continuous fluorescence on the light emitting element and the first resin is continuous. A body layer can be formed.

  In the light emitting device manufacturing method according to the present invention, it is preferable that in the first resin application step, the first resin is applied to a height that is at least continuous with the upper surface of the light emitting element.

  In the manufacturing method of the light emitting device that performs such a procedure, in addition to the upper surface of the light emitting element, the corners that are the boundary between the upper surface and the side surface of the light emitting element are precipitated by precipitating the phosphor contained in the second resin. The phosphor layer can be formed continuously without a break in the periphery, the gap between the plurality of light emitting elements, or the periphery of the light emitting elements. Therefore, the method for manufacturing a light emitting device can manufacture a light emitting device that can make all the light emitted from the top, corners, and side surfaces of the light emitting element enter the phosphor layer. In addition, since the phosphor layer is formed in close contact with the top surface of the light emitting device, the light emitting device manufacturing method can manufacture a light emitting device capable of converting the wavelength of light emitted from the top surface of the light emitting device more efficiently. can do.

  In the method for manufacturing a light emitting device according to the present invention, in the first resin application step, the first resin is preferably applied so as to cover a part of the upper surface of the light emitting element.

  In the light emitting device manufacturing method that performs such a procedure, in addition to the upper surface of the light emitting element, the corners that are the boundary between the upper surface and the side surface of the light emitting element are deposited by precipitating the phosphor contained in the second resin. In addition, the phosphor layer can be continuously formed without gaps in the gaps between the light emitting elements or around the light emitting elements. Therefore, the light emitting device manufactured by this manufacturing method can make all the light emitted from the top, corners, and side surfaces of the light emitting element enter the phosphor layer.

  Moreover, it is preferable that the manufacturing method of the light-emitting device which concerns on this invention apply | coats said 2nd resin containing resin of the same composition as said 1st resin in said 2nd resin application | coating process.

  In the method for manufacturing a light-emitting device that performs such a procedure, the interface between the first resin and the second resin is not formed, and problems such as poor curing do not occur, so that the light extraction rate can be improved.

  In the method for manufacturing a light emitting device according to the present invention, it is preferable that the plurality of light emitting elements are arranged in a square lattice shape or a triangular lattice shape on the substrate.

  In the method for manufacturing a light-emitting device that performs such a procedure, the light-emitting elements are regularly arranged in the front-rear, left-right, or front-back, left-right, and diagonal directions, so that color unevenness and luminance unevenness as the entire light-emitting device can be reduced.

  In order to solve the above problems, a light-emitting device according to the present invention is a light-emitting device manufactured by any one of the above-described methods for manufacturing a light-emitting device, the light-emitting element disposed on a substrate, and the light-emitting element A first resin having a predetermined viscosity applied to a side surface of the first resin, a second resin having a lower viscosity than the first resin, applied on the light emitting element and the first resin, and the first resin. And a phosphor layer formed at the boundary between the second resin and the second resin. However, in the light emitting device according to the present invention, a part of the phosphor constituting the phosphor layer exceeds the boundary between the first resin and the second resin as long as the light conversion is not affected. It may be contained in the resin.

  In the light-emitting device having such a configuration, a continuous phosphor layer is formed on the light-emitting element and the first resin, so that light emitted from the upper surface, corners, and side surfaces of the light-emitting element is formed. Can be incident on the phosphor layer.

  According to the light emitting device and the method for manufacturing the same according to the present invention, since all the light emitted from the upper surface, corners, and side surfaces of the light emitting element can be incident on the phosphor layer, a surface light source can be realized. Color unevenness and luminance unevenness between a region on the substrate where the light emitting element is arranged and a region where the light emitting element is not arranged on the substrate can be reduced.

It is the schematic which shows the light-emitting device which concerns on embodiment of this invention, Comprising: (a) is sectional drawing which shows the whole structure of a light-emitting device, (b) is the A section enlarged view of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the arrangement | positioning method of the several light emitting element in the light-emitting device which concerns on embodiment of this invention, Comprising: (a) is a top view which shows the case where the several light emitting element is arrange | positioned on a board | substrate in the shape of a square lattice, (B) is a top view which shows the case where the several light emitting element is arrange | positioned on the board | substrate at the triangular lattice form. It is the schematic which shows the manufacturing method of the light-emitting device concerning embodiment of this invention, Comprising: (a) is sectional drawing which shows a light emitting element mounting process, (b) is sectional drawing which shows a wire bonding process. It is the schematic which shows the manufacturing method of the light-emitting device which concerns on embodiment of this invention, Comprising: (a) is sectional drawing which shows a 1st resin application process, (b) is sectional drawing which shows a 2nd resin application process, (C) is sectional drawing which shows a fluorescent substance precipitation process and a resin hardening process. It is the schematic which shows the light-emitting device which concerns on other embodiment of this invention, Comprising: (a) is sectional drawing which shows the whole structure of a light-emitting device, (b) is the B section enlarged view of (a). It is sectional drawing which shows the light-emitting device which concerns on other embodiment of this invention. It is sectional drawing which shows the light-emitting device which concerns on other embodiment of this invention. It is the schematic which shows the light-emitting device which concerns on a prior art, Comprising: (a) is sectional drawing which shows the whole structure of a light-emitting device, (b) is the C section enlarged view of (a).

  Hereinafter, a light emitting device and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings. In the following description, first, the overall configuration of the light emitting device according to the embodiment will be described, and then the manufacturing method thereof will be described. In the drawings referred to in the following description, the scale and positional relationship of members may be exaggerated, or some members may be omitted. In the following description, the same name and reference sign indicate the same or the same members in principle, and the detailed description will be omitted as appropriate.

[Light emitting device]
The light emitting device 1 can be used as a light source of a display device or a lighting device, for example. Here, as shown in FIG. 1, the light emitting device 1 includes a substrate 10, a light emitting element 20, a wiring conductor 30, a wire 40, a phosphor layer 50, a first resin (first resin portion) 61, and And a sealing resin 60 made of a second resin (second resin portion) 62.

  The substrate 10 mounts and protects and holds the light emitting element 20. As shown in FIG. 1A, the substrate 10 has a cavity structure (concave shape) composed of a bottom portion on which the light emitting element 20 is mounted and a peripheral inner wall portion continuous from the bottom portion. The reason why the substrate 10 has the cavity structure in this way is to block the sealing resin 60 having a fluidity before curing when the light emitting device 1 is manufactured. In addition, the board | substrate 10 may not be an integral cavity structure as shown in FIG. 1, but the cavity structure which installed the dam material in the periphery of the flat board member, for example.

  As shown in FIG. 1A, a plurality of light-emitting elements 20 are mounted on the bottom of the substrate 10 via bonding members (not shown). Further, as shown in FIG. 1A, in addition to the light emitting element 20, a wiring conductor 30 and a part of the first resin 61 are also arranged at the bottom of the substrate 10.

  The material of the substrate 10 is preferably a material that has high thermal conductivity and excellent heat dissipation and does not transmit light from the light emitting element 20 or the phosphor 51 that is the wavelength conversion member. In particular, with respect to light, handling around the light emitting element 20 is important. Therefore, in the case of the substrate 10 having the cavity structure as shown in FIG. 1A, the reflectance is increased by performing plating or vapor deposition on the inside of the cavity. It is preferable to configure as described above. As a specific material of the substrate 10, for example, an insulating material such as ceramic, glass epoxy resin, silicon resin, thermosetting resin, or thermoplastic resin can be used.

  The light emitting element 20 emits light by applying a voltage and excites the phosphor 51. As shown in FIG. 1A, a plurality of light emitting elements 20 are mounted on the bottom of the substrate 10 with the light emitting surface (not shown) facing upward. Further, as shown in FIG. 1B, a phosphor layer 50 is formed on the upper surface 20 a of the light emitting element 20. The phosphor layer 50 is formed by sedimenting the phosphor 51 in the second resin 62. That is, as shown in FIG. 1A, the phosphor layer 50 is formed in contact with the upper surface 20 a of the light emitting element 20. As shown in FIG. 1A, the first resin 61 is formed around the light emitting element 20, that is, in the gap between the plurality of light emitting elements 20 and the gap between the light emitting element 20 and the inner wall surface of the substrate 10. Is filled.

  The light emitting element 20 is specifically an LED chip, and for example, one that emits blue light (light having a wavelength of 430 nm to 490 nm) is used. Further, the light emitting element 20 may have any of a face-up structure, a face-down structure, and a bonding structure. Here, as shown in FIG. Is shown.

  Note that both the face-up structure and the face-down structure described above indicate the mounting state of the light-emitting element, and the face-up structure is on the same surface side with respect to the substrate (or semiconductor layer) of the light-emitting element 20. A type in which a pair of electrodes are formed and the surface side on which the electrodes are formed is mounted facing the light output surface. The face-down structure is mounted with the surface side on which the electrodes are formed facing the mounting surface. The type (also called flip chip mounting) is shown. Moreover, the above-mentioned bonding structure has shown what took out the semiconductor layer containing the light emitting layer of the light emitting element 20, and bonded it to the metal or the insulating base.

  Here, as shown in FIGS. 2A and 2B, the light emitting elements 20 are preferably arranged on the substrate 10 in a square lattice shape or a triangular lattice shape. Here, the square lattice shape indicates a state in which the light emitting elements 20 are regularly arranged at equal distances in the front-rear and left-right directions, as shown in FIG. Further, the triangular lattice shape indicates a state in which the light emitting elements 20 are arranged on the front, rear, left, and right sides and obliquely as shown in FIG. Thereby, in the light emitting device 1, since the light emitting elements 20 are regularly arranged in the front-rear, left-right, or front-back, left-right, and diagonal directions, it is possible to reduce color unevenness and luminance unevenness as the entire light-emitting device 1.

  The wiring conductor 30 supplies power to the light emitting element 20 via the wire 40. As shown in FIG. 1A, the wiring conductor 30 has a positive electrode and a negative electrode (a negative electrode) of the light emitting element 20 in a portion where the light emitting element 20 is not mounted on the bottom of the substrate 10, that is, in a gap between the plurality of light emitting elements 20. A plurality of them are formed corresponding to (not shown).

  The wire 40 is for electrically connecting the light emitting element 20 and the wiring conductor 30 formed on the substrate 10 and is generally used in wire bonding. As a material of the wire 40, gold, copper, platinum, aluminum, or an alloy thereof can be used. As the material of the wire 40, it is preferable to use gold which is excellent in conductivity and is general as an electrode material of the light emitting element 20. The diameter of the wire 40 is not particularly limited, and is determined according to the material of the wire 40, the current value, the wire bonding conditions, the specifications of the light emitting element 20, and the like.

  The phosphor layer 50 is a wavelength conversion member that emits light having a wavelength different from that of the light from the light emitting element 20 using the light from the light emitting element 20 as excitation light. As will be described later, the phosphor layer 50 is a layer formed by sedimentation of the phosphor 51 contained in the second resin 62. As shown in FIG. The first resin 61 is formed continuously without interruption. More specifically, as shown in FIG. 1B, the phosphor layer 50 is the lowermost part of the second resin 62, and is a boundary between the light emitting element 20, the first resin 61, and the second resin 62. (Interface). In addition, the phosphor layer 50 is formed at the boundary between the first resin 61 and the second resin 62 in this way, as described later, the viscosity of the first resin 61 is higher than the viscosity of the second resin 62. This is because the structure is high, and the sedimentation of the phosphor 51 stops at the boundary described above. However, as described above, in the light emitting device 1, as long as it does not affect the light conversion, a part of the phosphor 51 constituting the phosphor layer 50 is composed of the first resin 61 and the second resin 62. It may be included in the first resin 61 beyond the boundary.

  Examples of the phosphor 51 constituting the phosphor layer 50 include a YAG phosphor mixed with yttrium, aluminum and garnet, a nitride phosphor mainly activated with a lanthanoid element such as Eu and Ce, and an oxynitride A physical phosphor or the like can be used. The phosphor 51 constituting the phosphor layer 50 can produce white light even if it is a single type, but the light quality (color rendering) is poor because the spectrum is steep and narrow compared to sunlight. Therefore, by mixing the plurality of types of phosphors 51 to form the phosphor layer 50, a plurality of steep and narrow spectra can be formed, and the light quality can be improved by making it appear to be a broad spectrum approximately.

  Here, the phosphor layer 50 is excited by, for example, a part of near-ultraviolet light to blue light of about 360 nm to 500 nm emitted from the light emitting element 20 in general, and emits yellow light of about 500 nm to 700 nm. put out. The blue light from the light emitting element 20 and the yellow light converted by the phosphor layer 50 are mixed to extract white light.

  The sealing resin 60 is for protecting the light emitting element 20, the wire 40, and the like disposed on the substrate 10 from dust, moisture, external force, and the like. As shown in FIGS. 1A and 1B, the sealing resin 60 includes a first resin 61 that covers the side surfaces 20 b and 20 b of the light emitting element 20 and the wiring conductor 30, and a first resin 61 that covers the upper surface 20 a of the light emitting element 20. It is composed of two layers of two resins 62. However, as will be described later, when the first resin 61 and the second resin 62 contain a resin having the same composition, the two resins are integrated and substantially constituted by one layer.

  As the first resin 61 and the second resin 62 constituting the sealing resin 60, a translucent material is used for efficiently emitting the light from the light emitting element 20 to the outside, and the wiring conductor 30 is protected. Insulating materials are used for this purpose. Further, as the material for the first resin 61 and the second resin 62, specifically, a silicon resin or an epoxy resin can be used, and here, a silicon resin is used.

As the 1st resin 61, the thing with a high viscosity which made the resin material contain the filler is used. The filler contained in the first resin 61 is preferably one that transmits and diffuses the light from the light emitting element 20, and for example, silica (SiO ₂ ) can be used. As a result, the light emitting device 1 can diffuse the light emitted from the light emitting element 20, and the gap between the light emitting elements 20 can be sufficiently shined. The viscosity of the first resin 61 is, for example, 80 to 550 Pa · s, preferably 150 to 200 Pa · s.

  As the second resin 62, a resin material containing the phosphor 51 and having a viscosity lower than that of the first resin 61 is used. Thereby, in the manufacturing process of the light emitting device 1 to be described later, when the second resin 62 containing the phosphor 51 is applied on the first resin 61 and the phosphor 51 is settled, the first resin 61 and the second resin 61 are secondly deposited. Due to the difference in viscosity of the resin 62, the sedimentation of the phosphor 51 stops at the boundary between the first resin 61 and the second resin 62. Therefore, as shown in FIGS. 1A and 1B, the phosphor layer 50 is formed on the first resin 61. The viscosity of the second resin 62 is, for example, 120 Pa · s or less, preferably 2 to 10 Pa · s, compared to the viscosity of the first resin 61. Further, the difference in viscosity between the first resin 61 and the second resin 62 is, for example, by using a resin material having different viscosities between the first resin 61 and the second resin 62 in addition to containing the filler in the first resin 61. Can be adjusted.

  Here, as shown in FIG. 1B, the first resin 61 is preferably applied so as to cover a part of the upper surface 20 a of the light emitting element 20. That is, as shown in FIG. 1B, the first resin 61 is formed to a height exceeding the side surfaces 20b, 20b of the light emitting element 20, and covers the edge of the upper surface 20a of the light emitting element 20. Is formed. In addition, as shown in FIG. 1B, the first resin 61 is formed in a dome shape so as to rise upward from the edge of the upper surface 20 a of the light emitting element 20 in the gaps between the plurality of light emitting elements 20. . Thereby, as shown in FIG.1 (b), in addition to the upper surface 20a of the light emitting element 20, the light-emitting device 1 is the circumference | surroundings of the corner | angular part which is the boundary of the upper surface 20a of the said light emitting element 20, and side surface 20b, 20b. The phosphor layer 50 can be continuously formed on the upper side of the gap between the light emitting elements 20 and the upper side of the gap between the light emitting element 20 and the inner wall surface of the substrate 10.

  Moreover, it is preferable to use what contains resin of the same composition as the 1st resin 61 and the 2nd resin 62. FIG. Accordingly, in the light emitting device 1, the interface between the first resin 61 and the second resin 62 is not formed, and problems such as poor curing do not occur, so that the light extraction rate of the light emitting device 1 can be improved.

  In the light emitting device 1 having the above-described configuration, since the continuous phosphor layer 50 is formed on the light emitting element 20 and the first resin 61, the upper surface 20a and corners of the light emitting element 20 are formed. All of the light emitted from the side surfaces 20b and 20b can be incident on the phosphor layer 50. Therefore, according to the light emitting device 1, color unevenness and luminance unevenness between the light emitting element 20 and between the light emitting elements 20 can be reduced.

[Method for Manufacturing Light Emitting Device]
Hereinafter, the manufacturing method of the light-emitting device 1 which concerns on embodiment of this invention is demonstrated. In the following description, a method for manufacturing the light-emitting device 1 using the light-emitting element 20 having the face-up structure will be described. The manufacturing method of the light-emitting device 1 performs here the light emitting element mounting process, the wire bonding process, the 1st resin application process, the 2nd resin application process, the fluorescent substance precipitation process, and the resin hardening process.

  The light emitting element mounting step is a step of mounting a plurality of light emitting elements 20 on the substrate 10 as shown in FIG. In the light emitting element mounting step, as shown in FIG. 3A, a plurality of light emitting elements 20 are arranged on the substrate 10 via a bonding member (not shown).

  The wire bonding step is a step of connecting the light emitting element 20 and the wiring conductor 30 with a wire 40 as shown in FIG. In the wire bonding step, as shown in FIG. 3A, a pair of electrodes (not shown) of the light emitting element 20 and the wiring conductor 30 are electrically connected via the wire 40.

  The first resin application step is a step of applying the first resin 61 between the plurality of light emitting elements 20 mounted on the substrate 10 as shown in FIG. In the first resin application step, as shown in FIG. 4A, a translucent first resin 61 having a predetermined viscosity is applied to the gaps between the plurality of light emitting elements 20, the plurality of light emitting elements 20 and the substrate 10. It is applied (filled) between the inner wall surfaces and applied so as to cover a part of the upper surface 20 a of each light emitting element 20.

  The second resin application step is a step of applying the second resin 62 on the light emitting element 20 and the first resin 61 as shown in FIG. In the second resin application step, as shown in FIG. 4B, the translucent second resin 62 having a viscosity lower than that of the first resin 61 and containing the phosphor 51 is replaced with the first resin 61. Apply without curing. In the second resin application step, as shown in FIG. 4B, the second resin 62 in which the phosphors 51 are uniformly dispersed in the resin is used.

  The phosphor sedimentation step is a step of sedimenting the phosphor 51 contained in the second resin 62 as shown in FIG. In the phosphor sedimentation step, as shown in FIG. 4C, the phosphor 51 contained in the second resin 62 is formed on the plurality of light emitting elements 20 and the first resin 61 by, for example, natural sedimentation or centrifugal sedimentation. Allow to settle. Thereby, in the manufacturing method of the light emitting device 1, as shown in FIG. 4C, in addition to the upper surface 20 a of the light emitting element 20, a corner portion that is a boundary between the upper surface 20 a of the light emitting element 20 and the side surfaces 20 b and 20 b. The phosphor layer 50 can be formed continuously without any breaks, around the gap, above the gap between the light emitting elements 20, and above the gap between the light emitting elements 20 and the inner wall surface of the substrate 10.

  As described above, in the second resin coating step, since the second resin 62 in which the phosphor 51 is uniformly dispersed is used, when the phosphor 51 is settled, as shown in FIG. The fluorescent layer 50 having a uniform thickness is formed on the plurality of light emitting elements 20 and the first resin 61. That is, in the method for manufacturing the light emitting device 1 according to the embodiment of the present invention, the thickness of the phosphor layer 50 is made uniform by using the second resin 62 in which the phosphor 51 is uniformly dispersed in the second resin coating step. To control.

  The resin curing step is a step of curing the first resin 61 and the second resin 62 as shown in FIG. In the resin curing step, for example, the first resin 61 and the second resin 62 are cured by heating. The resin curing step may be performed after the phosphor 51 in the second resin 62 is naturally settled on the light emitting element 20 and the first resin 61 in the above-described phosphor sedimentation step, or may be centrifuged. It may be performed after the phosphor 51 in the second resin 62 is settled on the light emitting element 20 and the first resin 61 by sedimentation or the like.

  In the manufacturing method of the light emitting device 1 that performs the above procedure, the first resin 61 is applied so as to fill the gaps between the light emitting elements 20 in the first resin application step, and the first resin is applied in the second resin application step. A second resin 62 having a lower viscosity than 61 and containing the phosphor 51 is applied from above the light emitting element 20 and the first resin 61. Therefore, in the method for manufacturing the light emitting device 1, the sedimentation of the phosphor 51 contained in the second resin 62 stops at the boundary between the first resin 61 and the second resin 62. A continuous phosphor layer 50 without a break can be formed on 61. Therefore, according to the method for manufacturing the light emitting device 1, a surface light source can be realized, and a region on the substrate 10 where the light emitting element 20 is disposed, and a region on the substrate 10 where the light emitting element 20 is not disposed. It is possible to manufacture the light emitting device 1 that can reduce the color unevenness and the brightness unevenness.

  The light emitting device and the method for manufacturing the same according to the present invention have been specifically described above by the embodiments for carrying out the invention. However, the gist of the present invention is not limited to these descriptions, and the scope of the claims is as follows. It must be interpreted widely based on the description. Needless to say, various changes and modifications based on these descriptions are also included in the spirit of the present invention.

  For example, in the light-emitting device 1 described above, the first resin 61 is formed so as to cover a part of the upper surface 20a of the light-emitting element 20 as shown in FIGS. As shown in (a) and (b), the first resin 61 may be applied to at least a height continuous with the upper surface 20 a of the light emitting element 20. That is, in the light emitting device 1A, as shown in FIG. 5B, the first resin 61 is formed up to the corner portion that is the boundary between the upper surface 20a and the side surfaces 20b, 20b of the light emitting element 20, and the light emitting element 20 is not covered with the first resin 61. Further, as shown in FIG. 5B, the first resin 61 is formed in a reverse dome shape so as to fall downward from the corners of the light emitting elements 20 in the gaps between the plurality of light emitting elements 20.

  As shown in FIG. 5B, the light emitting device 1A having such a configuration includes a corner portion that is a boundary between the upper surface 20a of the light emitting element 20 and the side surfaces 20b and 20b, in addition to the upper surface 20a of the light emitting element 20. In addition, the phosphor layer 50 is continuously formed on the upper side of the gap between the light emitting elements 20 and the upper side of the gap between the light emitting element 20 and the inner wall surface of the substrate 10. Therefore, according to the light emitting device 1A, all the light emitted from the upper surface 20a, the corners, and the side surfaces 20b and 20b of the light emitting element 20 can be incident on the phosphor layer 50. Further, according to the light emitting device 1A, since the phosphor layer 50 is formed in close contact with the upper surface 20a of the light emitting element 20, the wavelength of light emitted from the upper surface 20a of the light emitting element 20 can be converted more efficiently. it can.

  For example, in the light-emitting element 20 having a face-up structure, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer are disposed on a light-transmitting sapphire substrate. Therefore, in the light-emitting element 20 having the face-up structure, light generated in the light-emitting layer propagates in the sapphire substrate, and light is sufficiently emitted not only from the upper surface but also from the side surface of the light-emitting element 20. Accordingly, in the case of the light-emitting element 20 having such a face-up structure, the first resin 61 is provided up to the edge of the upper surface 20a of the light-emitting element 20 so that the phosphor layer 50 is placed upward as in the light-emitting device 1 shown in FIG. The first resin 61 is provided only in the gaps between the plurality of light emitting elements 20 as in the light emitting device 1A shown in FIG. Even in the form formed in the reverse dome shape, the light can be sufficiently incident on the phosphor layer 50 formed on the upper side of the gap between the light emitting elements 20. That is, in the case of the light-emitting element 20 having the face-up structure, for example, the yellow linear shape formed by the phosphors 51 is formed in the gaps between the plurality of light-emitting elements 20 regardless of the form shown in FIGS. No color unevenness such as the formation of this region occurs.

  Further, since the light-emitting element 20 having the face-down structure also includes a light-transmitting sapphire substrate as in the face-up structure, light generated in the light-emitting layer propagates through the sapphire substrate, and only the upper surface of the light-emitting element 20 In addition, sufficient light is emitted from the side surface. Therefore, even in the case of the light-emitting element 20 having the face-down structure, for example, in the form of either FIG. 1A or FIG. No color unevenness such as the formation of this region occurs.

  On the other hand, the light-emitting element 20 having a laminated structure is a laminate of an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a semiconductor growth substrate such as sapphire, and is laminated to a substrate such as Si that does not transmit light. Then, in order to create the substrate by peeling off the sapphire substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are arranged on a substrate such as Si. Therefore, in the light emitting element 20 having the bonded structure, light generated in the light emitting layer does not propagate through the Si substrate, so that light is mainly emitted from the upper surface of the light emitting element 20 and light is mostly emitted from the side surface of the light emitting element 20. Not. Therefore, in the case of the light emitting element 20 having such a laminated structure, the first resin 61 is provided up to the edge of the upper surface 20a of the light emitting element 20 so that the phosphor layer 50 is placed upward as in the light emitting device 1 shown in FIG. It is preferable to form it in a dome shape in the direction. Thereby, for example, light emitted so as to spread in an oblique direction from the corners of the light emitting element 20 having a bonded structure or the side surface of the light emitting element 20 is incident on the dome-shaped portion of the phosphor layer 50 without leaking. Can do.

  In the light emitting devices 1 and 1A described above, a plurality of light emitting elements 20 are mounted on the substrate 10 as shown in FIGS. 1A and 5A. As described above, one light emitting element 20 may be mounted on the substrate 10. In this case, as shown in FIGS. 6 and 7, the light emitting devices 1B and 1C are filled with the primary resin 61 in the gap between the light emitting element 20 and the inner wall surface of the substrate 0, and On the first resin 61, a continuous phosphor layer 50 without a break is formed. Also in these embodiments, all the light emitted from the upper surface 20a, the corners, and the side surfaces 20b and 20b of the light emitting element 20 can be incident on the phosphor layer 50.

1, 1A, 1B, 1C, 101 Light-emitting device 10, 110 Substrate 20, 120 Light-emitting element 20a, 120a Upper surface 20b, 20b, 120b, 120b Side surface 30, 130 Wiring conductor 40, 140 Wire 50 Phosphor layer 51, 151 Fluorescence Body 60,160 Sealing resin 61 First resin 62 Second resin

Claims (8)

A method of manufacturing a light emitting device comprising a plurality of light emitting elements and a substrate on which the plurality of light emitting elements are disposed,
A first resin application step of applying a translucent first resin having a predetermined viscosity between the plurality of light emitting elements mounted on the substrate;
A translucent second resin having a viscosity lower than that of the first resin and containing a phosphor is applied on the plurality of light emitting elements and the first resin in a state where the first resin is not cured. A second resin coating step,
A phosphor sedimentation step of precipitating the phosphor contained in the second resin on the plurality of light emitting elements and the first resin;
A method for manufacturing a light-emitting device, comprising: A manufacturing method of a light emitting device comprising one light emitting element and a substrate provided with the one light emitting element,
A first resin application step of applying a translucent first resin having a predetermined viscosity around the light emitting element mounted on the substrate;
A second translucent resin having a lower viscosity than the first resin and containing a phosphor is applied to the light emitting element and the first resin in a state where the first resin is not cured. 2 resin coating process;
A phosphor sedimentation step of precipitating the phosphor contained in the second resin on the light emitting element and the first resin;
A method for manufacturing a light-emitting device, comprising:   3. The method of manufacturing a light emitting device according to claim 1, wherein, in the first resin application step, the first resin is applied to a height that is at least continuous with an upper surface of the light emitting element.   3. The method of manufacturing a light emitting device according to claim 1, wherein, in the first resin application step, the first resin is applied so as to cover a part of an upper surface of the light emitting element. .   5. The light emitting device according to claim 1, wherein, in the second resin application step, the second resin containing a resin having the same composition as the first resin is applied. Production method.   The method of manufacturing a light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged in a square lattice shape or a triangular lattice shape on the substrate. A light emitting device disposed on a concave substrate having an inner wall surface ;
A first resin portion having a predetermined viscosity applied to a side surface of the light emitting element;
A second resin part applied on the light emitting element and on the first resin part and having a lower viscosity than the first resin part;
A phosphor layer formed at a boundary between the first resin portion and the second resin portion;
With
The light emitting device characterized in that the surface shape of the first resin portion is recessed downward from the upper surface of the light emitting element between the light emitting element and the inner wall surface .   A plurality of the light emitting elements are disposed on the concave substrate,
  The light emitting device according to claim 7, wherein the first resin portion has a surface shape that is recessed downward from an upper surface of the light emitting element between the plurality of light emitting elements.

Images