CN103022274B - A kind of LED chip and manufacture method thereof - Google Patents
A kind of LED chip and manufacture method thereof Download PDFInfo
- Publication number
- CN103022274B CN103022274B CN201110282701.5A CN201110282701A CN103022274B CN 103022274 B CN103022274 B CN 103022274B CN 201110282701 A CN201110282701 A CN 201110282701A CN 103022274 B CN103022274 B CN 103022274B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000000499 gel Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000012799 electrically-conductive coating Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009415 formwork Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- -1 KH-560 Chemical compound 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a kind of manufacture method of LED chip, comprise the following steps: S101, provide an epitaxial wafer, described epitaxial wafer comprises substrate, and resilient coating sequentially stacked on substrate, n-type semiconductor layer, luminescent layer, p-type semiconductor layer; P-type semiconductor layer forms conductive layer, and carries out etching formation groove on the electrically conductive; There is provided a template, the surface of described template is provided with outstanding structure, and the surface in template with outstanding structure applies layer of fluorescent powder layer; Template is vertically pressed on the electrically conductive, and heat-treats, then remove template.The present invention by phosphor powder layer that is even in LED surface imprint a layer thickness, surfacing, thus obtains the ejecting white light of color uniformity.
Description
Technical field
The invention belongs to field of semiconductor illumination, relate to a kind of manufacture method of LED chip.
Background technology
Along with the development of LED technology, for improving the light efficiency of LED product, have higher requirement to the light-emitting uniformity of LED, implementing new LED fluorescent powder paint-on technique is the effective way improving LED chip light extraction uniformity.Traditional dosing technology, the fluorescent coating of similar spherical crown shape can be formed in ideal conditions, but in practical operation, there is obvious fault of construction in this fluorescent coating, structural non-homogeneous to edge of its center, and no matter manually or machine operation, between the LED of same batch, fluorescent coating all can have certain difference in shape, is difficult to control its uniformity and consistency, and this just makes to have larger colourity difference between LED.Meanwhile, uneven due to fluorescent coating microcosmic surface, when beam projecting, can cause the uneven of white light color, the inhomogeneities hot spot causing local partially yellow or partially blue occurs.
Summary of the invention
The present invention solves the uneven technical problem of existing LED chip light extraction, provides a kind of manufacture method of LED chip.
The invention provides a kind of manufacture method of LED chip, said method comprising the steps of:
There is provided an epitaxial wafer, described epitaxial wafer comprises substrate, and resilient coating sequentially stacked on substrate, n-type semiconductor layer, luminescent layer, p-type semiconductor layer;
P-type semiconductor layer forms conductive layer, and carries out etching formation groove on the electrically conductive;
There is provided a template, the surface of described template is provided with outstanding structure, and the surface in template with outstanding structure applies layer of fluorescent powder layer;
Template is vertically pressed on the electrically conductive, and heat-treats, then remove template.
The present invention also provides a kind of LED chip, and described LED chip adopts said method to make.
The beneficial effect of technical solution of the present invention is: by phosphor powder layer that is even in LED surface (on conductive layer) impression a layer thickness, surfacing, the light that the light of whole LED chip outgoing is on the surface changed after the uniform phosphor powder layer of thickness is almost identical, obtains the ejecting white light of color uniformity.
Accompanying drawing explanation
Fig. 1 is the epitaxial slice structure schematic diagram that the embodiment of the present invention is coated with impression gel coating;
Fig. 2 is the epitaxial slice structure schematic diagram of the embodiment of the present invention with groove structure;
Fig. 3 is embodiment of the present invention formwork structure schematic diagram;
Fig. 4 is the formwork structure schematic diagram that the embodiment of the present invention is coated with phosphor powder layer;
Fig. 5 is the epitaxial slice structure schematic diagram that the embodiment of the present invention is coated with phosphor powder layer.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The invention provides a kind of manufacture method of LED chip, said method comprising the steps of:
S101, provide an epitaxial wafer, described epitaxial wafer comprises substrate, and resilient coating sequentially stacked on substrate, n-type semiconductor layer, luminescent layer, p-type semiconductor layer;
S102, in p-type semiconductor layer, form conductive layer, and carry out etching on the electrically conductive and form groove;
S103, provide a template, the surface of described template is provided with outstanding structure, and the surface in template with outstanding structure applies layer of fluorescent powder layer;
S104, template vertically to be pressed on the electrically conductive, and heat-treat, then remove template.
Be described in detail below in conjunction with the manufacture method of accompanying drawing to light emitting semiconductor device phosphor powder layer:
Particularly, as shown in Figure 1, in step S101, this epitaxial wafer is by being commercially available, and usually, the epitaxial wafer adopted in this area comprises substrate, and resilient coating sequentially stacked on substrate, n-type semiconductor layer, luminescent layer, p-type semiconductor layer.
Equally, described epitaxial wafer also can adopt method commonly known in the art to prepare, such as, can adopt MOCVD(MOCVD method) on substrate 1 deposited in sequential formed resilient coating 2, n-type semiconductor layer 3, luminescent layer 4 and p-type semiconductor layer 5.In embodiments of the present invention, described substrate 1 is sapphire, SiC or GaN, described luminescent layer 4 is quantum well layer, be preferably multiple quantum well layer (MQW), described n-type semiconductor layer 3 and p-type semiconductor layer 5 are nitride layer, in the present embodiment, n-type semiconductor layer 3 is N-shaped GaN(gallium nitride) semiconductor layer and p-type semiconductor layer 5 be p-type GaN(gallium nitride) semiconductor layer.
Particularly, as depicted in figs. 1 and 2, in step s 102, depositing conducting layer 6 in p-type semiconductor layer 5, on conductive layer 6, then carry out etching form groove 61, described groove 61 is elongate in shape or hole shape.Under preferable case, this groove 61 extends to p-type semiconductor layer 5 in vertical direction.
In embodiments of the present invention, described step S102 is specially:
S201, in p-type semiconductor layer 5, form conductive layer 6;
S202, on conductive layer 6 coating impression gel coating, then by impression, obtain the impression gel coating 7 with groove structure;
S203, etching epitaxial wafer form groove 61, then remove impression gel coating 7.
Under preferable case, by etching, described groove 61 is made to extend to p-type semiconductor layer 5.
Particularly, in step s 201, adopt electron beam evaporation plating machine high temperature deposition one deck conductive layer 6 in p-type semiconductor layer 5, deposition process temperature controls at 295 ~ 315 DEG C, and oxygen flow is that 9sccm(marks condition milliliter per minute), embryo deposit Stress control is at 2.5 × 10e
-6torr(holds in the palm), deposition rate controls at 0.5 ~ 1/s(dust/per second), evaporation umbrella rotating speed controls to turn per minute at 10 ~ 12rpm().This conductive is ITO(tin indium oxide), mix ZnO or the Ni/Au film of aluminium, preferred material is ITO.
In step S202, first on conductive layer 6, impress gel coating by sol evenning machine spin coating, its thickness is 2 ~ 3um.Then by impression, the impression gel coating with groove structure is obtained.
The method of above-mentioned impression is the method usually adopted in prior art, concrete, according to the groove structure of required formation, one impression motherboard is provided, this impression motherboard have the outstanding structure corresponding with the groove structure of required formation, such as, but this outstanding structure elongate in shape or hole shape, and corresponding available groove structure is elongate in shape or hole shape.
Impression motherboard is being scribbled on the epitaxial wafer impressing glue at the suitable sagging vertical compression of temperature and pressure, remove impression motherboard, the impression gel coating 7 with required groove structure can be obtained, make impression gel coating 7 cover a part of conductive layer 6, and outside conductive layer 6 corresponding to groove structure place be exposed to.
In step S203, the method for ICP dry etching etching epitaxial wafer is adopted to be transferred on conductive layer 6 by the groove structure of impression gel coating 7.Under preferable case, continue etching and groove 61 is etched to p-type semiconductor layer 5, namely described groove 61 extends to p-type semiconductor layer 5 in vertical direction, its objective is and plays surface coarsening effect, destroy the angle of total reflection at p-type semiconductor layer 5 interface, increase the light extraction efficiency of epitaxial wafer.The present invention adopts Cl
2/ CH
4/ BCl
3the mist of/Ar etches, gas flow is respectively 20/10/5/3sccm, pressure 0.6Pa, RF(radio-frequency (RF) energy) be 100W(watt), etch the impression gel coating 7 that rear removal remains in conductive layer 6 surface, obtain the epitaxial wafer with groove 61, the degree of depth of described groove 61 is 50 ~ 100nm.
The manufacture method of a kind of LED chip of the present invention, described method also comprises, and after described step S102, adopts photoetching process definition epitaxial wafer top electrode position, and makes the electrode 51 of p-type semiconductor layer 5 and the electrode (not shown) of n-type semiconductor layer 3.
Particularly, as shown in Figure 3 and Figure 4, in step s 103, the template 8 that one has an outstanding structure is provided, this outstanding structure is corresponding with the groove 61 on epitaxial wafer, utilizes the mode of silk screen printing or spraying to have on the surface of outstanding structure in template 8 and applies layer of fluorescent powder layer 9, and this phosphor powder layer 9 is the mixture after fluorescent material and glue class Homogeneous phase mixing, described glue class is silica gel or epoxy resin, is preferably silica gel.Preferably, fluorescent material is nanoscale fluorescent material, effectively can reduce the thickness of phosphor powder layer 9, suppresses irreflexive generation of light, and minimizing light penetrates the loss that silica gel causes, thus improves brightness and the light extraction efficiency of LED chip.
Particularly, as shown in Figure 5, in step S104, the template 8 having applied phosphor powder layer 9 is vertically pressed onto epitaxial wafer surface, and the adhesive force improving phosphor powder layer 9 and epitaxial wafer is heat-treated to it, heat treatment temperature is 100 ~ 150 DEG C, and heat treatment time is 30 ~ 50 minutes, after phosphor powder layer 9 is combined with epitaxial wafer intimate surface, removes template 8, obtains covering the phosphor powder layer 9 of epitaxial wafer uniform ground on the surface.
Especially, described template 8 has the region uncoated phosphor powder layer of one side at corresponding epitaxial wafer electrode of outstanding structure, and when template 8 is vertically pressed onto epitaxial wafer surface, described phosphor powder layer 9 does not cover the electrode zone of epitaxial wafer.
Preferably, before described step S104, be also included in conductive layer 6 and apply one deck tackifier on the surface, described tackifier are silane coupling agent.Its object is to, the adhesion of epitaxial wafer and phosphor powder layer 9 can be strengthened, make phosphor powder layer 9 not easily because the reason such as to be heated departs from from epitaxial wafer surface.Described silane coupling agent can be the models such as HMDS, KH-560, KH-570 or KH-550.
The present invention also provides a kind of LED chip, and the phosphor powder layer of this LED chip adopts said method to make.
The present invention is by phosphor powder layer that is even in LED surface (on conductive layer) impression a layer thickness, surfacing, the light that the light of whole LED chip outgoing is on the surface changed after the uniform phosphor powder layer of thickness is almost identical, obtain the ejecting white light of color uniformity, improve the distributing homogeneity of white light LEDs hot spot.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a manufacture method for LED chip, is characterized in that, said method comprising the steps of:
S101, provide an epitaxial wafer, described epitaxial wafer comprises substrate, and resilient coating sequentially stacked on substrate, n-type semiconductor layer, luminescent layer, p-type semiconductor layer;
S102, in p-type semiconductor layer, form conductive layer, and carry out etching on the electrically conductive and form groove;
S103, provide a template, the surface of described template is provided with outstanding structure, and the surface in template with outstanding structure applies layer of fluorescent powder layer;
S104, template vertically to be pressed on the electrically conductive, and heat-treat, then remove template.
2. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, before described step S104, be also included on conductive layer surface and apply one deck tackifier, described tackifier are silane coupling agent.
3. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, described step S102 is specially:
S201, in p-type semiconductor layer, form conductive layer;
S202, on the electrically conductive coating impression gel coating, then by impressing the impression gel coating obtained with groove structure;
S203, etching epitaxial wafer form groove, then remove impression gel coating.
4. the manufacture method of a kind of LED chip as claimed in claim 3, is characterized in that, the groove of described conductive layer extends to p-type semiconductor layer in vertical direction.
5. the manufacture method of a kind of LED chip as claimed in claim 4, is characterized in that, the degree of depth of described groove is 50 ~ 100nm.
6. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, after described step S102, is also included in electrode epitaxial wafer making p-type semiconductor layer and n-type semiconductor layer.
7. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, described conductive layer is ITO layer, mixes ZnO or the Ni/Au film of aluminium.
8. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, described substrate is sapphire, SiC or GaN.
9. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, described phosphor powder layer is fluorescent material and the mixed uniformly mixture of glue class, and described glue class is epoxy resin or silica gel.
10. the manufacture method of a kind of LED chip as claimed in claim 1, is characterized in that, described heat treatment temperature is 100 ~ 150 DEG C, and heat treatment time is 30 ~ 50 minutes.
11. 1 kinds of LED chips, is characterized in that, described LED chip adopts the manufacture method as described in any one of claim 1 ~ 10 to make.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110282701.5A CN103022274B (en) | 2011-09-22 | 2011-09-22 | A kind of LED chip and manufacture method thereof |
| PCT/CN2012/080472 WO2013040974A1 (en) | 2011-09-22 | 2012-08-22 | Led chip and method for manufacturing the same |
| EP12833315.0A EP2759001A4 (en) | 2011-09-22 | 2012-08-22 | Led chip and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110282701.5A CN103022274B (en) | 2011-09-22 | 2011-09-22 | A kind of LED chip and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103022274A CN103022274A (en) | 2013-04-03 |
| CN103022274B true CN103022274B (en) | 2016-04-13 |
Family
ID=47913864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110282701.5A Expired - Fee Related CN103022274B (en) | 2011-09-22 | 2011-09-22 | A kind of LED chip and manufacture method thereof |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2759001A4 (en) |
| CN (1) | CN103022274B (en) |
| WO (1) | WO2013040974A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
| CN112670379A (en) * | 2020-12-24 | 2021-04-16 | 广东省科学院半导体研究所 | Micro LED structure and color display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200917519A (en) * | 2007-10-05 | 2009-04-16 | Delta Electronics Inc | Light-emitting diode chip and manufacturing method thereof |
| CN101755347A (en) * | 2007-07-04 | 2010-06-23 | Lg伊诺特有限公司 | Light emitting device and method of fabricating the same |
| CN101853911A (en) * | 2010-03-31 | 2010-10-06 | 晶能光电（江西）有限公司 | Light-emitting diode (LED) structure for improving light-extraction efficiency and manufacturing method |
| CN102130250A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) and manufacturing method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4822482B2 (en) * | 2001-05-23 | 2011-11-24 | シチズン電子株式会社 | Light emitting diode and manufacturing method thereof |
| EP1556904B1 (en) * | 2002-10-30 | 2018-12-05 | OSRAM Opto Semiconductors GmbH | Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US20100181591A1 (en) * | 2007-06-29 | 2010-07-22 | Abel Systems Incorporation | Led illumination device using diffraction member |
| CN101599519A (en) * | 2008-06-04 | 2009-12-09 | 国立勤益科技大学 | Emitting uniform light emitting diode construction and manufacture method thereof |
| US8247248B2 (en) * | 2009-05-15 | 2012-08-21 | Achrolux Inc. | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure |
| TWI492422B (en) * | 2010-03-18 | 2015-07-11 | Everlight Electronics Co Ltd | Fabrication method of light emitting diode chip having phosphor coating layer |
| KR101011757B1 (en) * | 2010-04-09 | 2011-02-07 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| CN102130227B (en) * | 2010-12-22 | 2012-06-20 | 哈尔滨工业大学 | Encapsulation process for white light LED with optical lens |
-
2011
- 2011-09-22 CN CN201110282701.5A patent/CN103022274B/en not_active Expired - Fee Related
-
2012
- 2012-08-22 WO PCT/CN2012/080472 patent/WO2013040974A1/en active Application Filing
- 2012-08-22 EP EP12833315.0A patent/EP2759001A4/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101755347A (en) * | 2007-07-04 | 2010-06-23 | Lg伊诺特有限公司 | Light emitting device and method of fabricating the same |
| TW200917519A (en) * | 2007-10-05 | 2009-04-16 | Delta Electronics Inc | Light-emitting diode chip and manufacturing method thereof |
| CN101853911A (en) * | 2010-03-31 | 2010-10-06 | 晶能光电（江西）有限公司 | Light-emitting diode (LED) structure for improving light-extraction efficiency and manufacturing method |
| CN102130250A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting diode (LED) and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103022274A (en) | 2013-04-03 |
| WO2013040974A1 (en) | 2013-03-28 |
| EP2759001A4 (en) | 2015-04-29 |
| EP2759001A1 (en) | 2014-07-30 |
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