CN104659187A - White-light LED chip with vertical structure and manufacturing method of white-light LED chip - Google Patents
White-light LED chip with vertical structure and manufacturing method of white-light LED chip Download PDFInfo
- Publication number
- CN104659187A CN104659187A CN201310592285.8A CN201310592285A CN104659187A CN 104659187 A CN104659187 A CN 104659187A CN 201310592285 A CN201310592285 A CN 201310592285A CN 104659187 A CN104659187 A CN 104659187A
- Authority
- CN
- China
- Prior art keywords
- white
- silica gel
- led chip
- light led
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention provides a white-light LED chip with a vertical structure and a manufacturing method of the white-light LED chip. The manufacturing method comprises the following steps: epitaxially growing an indium gallium aluminum nitrogen semiconductor luminescence film on a growth substrate so as to form an indium gallium aluminum nitrogen luminous diode wafer with a vertical structure; forming a mask-film layer on an electrode welding disc of the wafer; coating the wafer with a layer of silica gel mixed with fluorescent powder so as to form a fluorescent-powder silica-gel layer; cutting the fluorescent-powder silica-gel layer on the electrode welding disc so as to separate the silica gel mixed with the fluorescent powder from other silica gel on the surface of the wafer; etching the mask-film layer and the fluorescent-powder silica-gel layer on the electrode welding disc so as to expose the electrode welding disc, and slicing the wafer so as to obtain single chips. The white-light LED chip provided by the invention has the advantages that the encapsulating technology is simple, and the sizing technology of fluorescent powder is not needed; besides, the brightness of emitted white light is uniform, the light emitting rate is high, and the cost is low.
Description
Technical field
The invention belongs to LED production technical field, more particularly, the present invention relates to a kind of White-light LED chip and manufacture method thereof of vertical stratification.
Background technology
Light-emitting diode (Light Emitting Diode, be called for short LED) be widely used in lighting field, and the light of lighting field is generally white light, the white light usual way realizing diode first forms blue chip, then in encapsulating material, fluorescent material is added when encapsulation, fluorescent material in the blue-light excited encapsulating material that blue chip sends sends the mixed light of gold-tinted or green glow or ruddiness or multiple color, is jointly mixed to form white light by blue light and these light be inspired.In general the preparation of blue chip and white light encapsulation are relatively independent operations, and first blue chip is carried out stepping by wavelength and luminous power, then the blue chip of different class is packaged into white light again, and the process of this acquisition white LED lamp pearl is called conventional package.Mainly there is following shortcoming in conventional package: after 1) blue chip is arranged on package support, needs to carry out a fluorescent glue to every chips, and such operating efficiency is low, and sealed in unit has high input, and manufacturing cost is high; 2) the fluorescent glue amount consistency of every chips is difficult to be guaranteed, and therefore encapsulates yield on the low side; 3) fluorescent glue cannot be uniformly distributed on the table top of whole chip, and especially the fluorescent material amount of microcosmic is difficult to match with the blue light emitting intensity of microcosmic, encapsulates quality like this and is difficult to ensure; 4) put fluorescent glue after chip bonding wire, easily cause the content of the gold goal part fluorescent glue of bonding wire on the high side, cause hanging ball phenomenon, greatly reduce encapsulation yield and encapsulation quality.Therefore,
After the uneven white light LEDs of hot spot makes light fixture, the white light of light fixture can be caused uneven in spatial distribution.
Current blue chip mainly contains same side structure and vertical stratification.For the chip of same side structure, its substrate is generally Sapphire Substrate and the silicon carbide substrates of blue light, even if chip back plates lighttight reflectance coating, also the bright dipping simultaneously of 5 faces is had, thus the luminescent device that the chip of this structure is made is difficult to obtain the uniform white light of hot spot, can there is significantly yellow circle in sides of chip.The chip of vertical stratification, because light-emitting film transfers to new lighttight supporting substrate from epitaxial substrate, for the luminescent device that the chip of this structure is made, it only has a face luminescence, and thus, it the most easily obtains the uniform white light of hot spot.If by the chip of vertical stratification, make white chip, then not only manufacturing process is simple for this chip, and is easy to obtain the uniform white light of hot spot, and only needs bonding wire when encapsulation and make lens, does not need through numerous and diverse rambunctious some fluorescent glue process.And if the wafer of vertical stratification is directly made white chip, then this chip can reduce the cost of semiconductor lighting industrial chain greatly.
Summary of the invention
A technical problem to be solved by this invention is to provide a kind of White-light LED chip manufacture method, by the White-light LED chip that the method is obtained, when product encapsulates, do not need to adopt fluorescent material point glue packaging technology, and luminosity is even, and light extraction efficiency is high, and production cost is low.
In order to solve the problems of the technologies described above, the invention provides a kind of manufacture method of White-light LED chip of vertical stratification, comprise the steps: at growth substrates Epitaxial growth indium-gallium-aluminum-nitrogen semiconductor light-emitting film, form the indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification, the electrode pad of described wafer is formed one deck mask layer, described wafer applies one deck be mixed with the silica gel of fluorescent material and carry out hot curing to it, form layer of fluorescent powder silica gel layer, cut the fluorescent powder silica gel layer on described electrode pad, it is made to be separated with other silica gel on wafer table top, etch the mask layer on described electrode pad and fluorescent powder silica gel layer, expose electrode pad, single chips is obtained to described wafer scribing.
Preferably, described mask layer is photoresist cylinder.
Preferably, the thickness of described photoresist cylinder is 10 ~ 150 microns, formation method includes but not limited to the one in following method: photoetching process, direct drop photoresist method, shaping photoresist cylinder is bonded in electrode pad method, mask pattern shaping in advance realizes masking method by hot-press method, and metallic pattern sticks with glue agent bonding method on a wafer.
Preferably, described growth substrates includes but not limited to the one in following substrate: Cu, Cr, Si, SiC
,sapphire.
Preferably, the method for described cutting includes but not limited to the one in following method: laser cutting, machine cuts.
Preferably, the painting method of described fluorescent powder silica gel layer includes but not limited to the one in following method: spin-coating method, spraying process, print process.
Preferably, described fluorescent powder silica gel layer is covering metal pad 1 micron at least, and at chip edge, described fluorescent powder silica gel layer is at least greater than InGaAlN thin film table top 2 microns.
Preferably, the method for described etching includes but not limited to the one in following method: wet etching, and ICP etches, and RIE etches.
Preferably, the cutting method of described scribing cutting includes but not limited to the one in following method: laser scribing, mechanical scribing.
The beneficial effect of the manufacture method of the White-light LED chip of vertical stratification provided by the invention is: manufacturing approach craft of the present invention is simple, and by the obtained white light LEDs chip of the method, when LED product encapsulates, do not need to adopt fluorescent material point glue packaging technology, and the white light sent is even, light extraction efficiency is high, and production cost is low.
Another technical problem to be solved by this invention is to provide a kind of white light LEDs chip, and during this chip light emitting, hot spot phenomenon is greatly improved, and light emission rate is high, and cost is low.
In order to solve the problems of the technologies described above, the invention provides a kind of white light LEDs chip of vertical stratification, the white light LEDs chip of this vertical stratification adopts the manufacture method of the white light LEDs chip of vertical stratification described above to obtain, comprise the indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification, be positioned at the fluorescent powder silica gel layer on described wafer, and described fluorescent powder silica gel layer covers all surface except electrode pad of described wafer.
Preferably, described fluorescent material at least comprise following in one: yttrium aluminium garnet fluorescent powder, aluminate fluorescent powder, nitride red fluorescent material, green aluminate fluorescent powder.
Preferably, the fluorescent material of described fluorescent powder silica gel layer and the mass ratio of silica gel are between 1:10 to 5:1, and the thickness of fluorescent powder silica gel layer is less than 100 microns.
The beneficial effect of the White-light LED chip of vertical stratification provided by the invention is: the packaging technology of White-light LED chip of the present invention is simple, does not need fluorescent material gluing process, and the white brightness simultaneously sent is even, and light emission rate is high, and cost is low.
accompanying drawing illustrates:
Fig. 1 is the structural representation of vertical stratification White-light LED chip provided by the invention, wherein 101 is indium-gallium-aluminum-nitrogen semiconductor light-emitting film layer, and 102 is passivation layer, and 103 is metallic reflective layer, 104 is pressure welding metal level, 105 is golden tin layers, and 106 is silver-colored speculum p-type ohmic contact layer, and 107 is electrically-conductive backing plate, 108 is substrate back of the body plating eutectic weldering ohmic contact layer, 109 is substrate back of the body plating eutectic metal level, and 110 is n-type electrode pad, and 111 is the layer of silica gel containing fluorescent material.
Fig. 2 A to Fig. 2 E is the implementation procedure schematic diagram of one embodiment of the present of invention.
Fig. 3 A to Fig. 3 E is the implementation procedure schematic diagram of an alternative embodiment of the invention.
embodiment:
Embodiment 1
Fig. 2 gives the step of the White-light LED chip preparing vertical stratification according to one embodiment of the invention.As shown in Figure 2 A, epitaxial growth indium-gallium-aluminum-nitrogen semiconductor light-emitting film 201 on a silicon substrate, depositing p-type ohmic contact layer 206 and metallic reflective layer 203, in conductive supporting substrate 207 front deposited gold tin layers 205, the indium-gallium-aluminum-nitrogen semiconductor light-emitting film of silicon substrate and the supporting substrate of conduction are bonded together, form the pressure welding metal level 204 of golden stannum roller welding, then silicon substrate is removed, realize the transfer of InGaAlN thin film from silicon substrate to supporting substrate, indium-gallium-aluminum-nitrogen semiconductor light-emitting film after transfer is through surface coarsening, be divided into mesa array, deposit passivation layer 202 and N-shaped Ohm contact electrode and metal pad 210, at conductive base backboard plating eutectic weldering ohmic contact layer 208 and eutectic metal level 209, thus form the indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification.Carry out common photoetching process on a wafer again, pad 210 and Cutting Road are formed the mask layer on n-electrode pad and the mask layer 211 on wafer Cutting Road, the thickness of this photoresist is 10 ~ 150 microns.Then spin coating fluorescent glue forms fluorescent adhesive layer 212 thereon, complete the wafer after fluorescent glue spin coating as shown in Figure 2 B, the fluorescent material of this fluorescent glue is that commonly use in the encapsulation of LED white light red, green, yellow waits fluorescent material, and this silica gel is the epoxy silica gel of common two components, also can be epoxy resin.Fluorescent material and silica gel abundant Agitation and mixing during configuration, the ratio of fluorescent material and silica gel, different according to the requirement of the colour temperature and development index of white chip, can change between 1:100 to 100:1, stir fluorescent glue and can complete stirring in a vacuum.After completing the stirring of fluorescent glue, apply fluorescent adhesive layer on a wafer, plasma peroxide must be carried out to wafer and go cull process before coating fluorescent adhesive layer, affect luminous efficiency to prevent photoresist residual on interface.After completing the spin coating proceeding of fluorescent glue, vacuum defoamation or evacuation and centrifugal degassing process are carried out to wafer, prevent from forming small bubble between the GaN table top of silica gel and alligatoring, and then it is cured, after silica gel on a wafer completes solidification, then fluorescent adhesive layer is cut on mask pattern with laser, after cutting as shown in Figure 2 C, effect after laser cutting cutting is as shown in Fig. 2 C 213, and laser only cuts layer of silica gel, but does not cut mask layer.After completing cutting, masking layer portions is exposed, and then spends glue and is removed by mask layer, the pad of chip and Cutting Road are exposed, thus is beneficial to the bonding wire of white chip, as shown in Figure 2 D.When removing mask layer, the liquid that requires to remove photoresist not only can not destroy the structure of blue light wafer, and can not destroy silica gel and fluorescent material, and can not cause silica gel yellow or blackout and affect its refractive index and transmissivity.Finally wafer is cut, obtain discrete device, as shown in Figure 2 E.The method of cutting crystal wafer sheet is common method for cutting silicon chips, can be mechanical dicing method, also can be laser scribing method, also can be the combination of common chip dicing method.
Embodiment 2
Fig. 3 gives the step of the White-light LED chip preparing vertical stratification according to one embodiment of the invention.As shown in Figure 3A, epitaxial growth indium-gallium-aluminum-nitrogen semiconductor light-emitting film 301 on a sapphire substrate, depositing p-type ohmic contact layer 306 and metallic reflective layer 303, in conductive supporting substrate 307 front deposited gold tin layers 305, the indium-gallium-aluminum-nitrogen semiconductor light-emitting film of Sapphire Substrate and the supporting substrate of conduction are bonded together, form the pressure welding metal level 304 of golden stannum roller welding, then Sapphire Substrate is removed, realize the transfer of InGaAlN thin film from growth substrates to supporting substrate, indium-gallium-aluminum-nitrogen semiconductor light-emitting film after transfer is through surface coarsening, be divided into mesa array, deposit passivation layer 302 and N-shaped Ohm contact electrode and metal pad 310, thus form the indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification.The pad 310 of wafer is put the mask layer 311 on UV solidification glue formation n-electrode pad, as shown in Figure 3 B.This UV solidifies glue oneself can form hemisphere substantially, is then cured it.Also can be other silica gel, or epoxy resin, or the metal of low melting point different from electrode metal.Then spin coating fluorescent glue on a wafer, forms fluorescent powder silica gel layer 312, as shown in Figure 3 C.Then, with the fluorescent material on laser ablation mask pattern and silica gel and mask layer, as shown in Figure 3 D, finally wafer is cut into discrete device, as shown in FIGURE 3 E.
Provide above description, be only intended to the purpose of illustration and description.They and non-exclusive, or limit the invention to disclosed form.Therefore, many amendments and modification are apparent to those skilled in the art.So, above-mentioned open also not intended to be limiting the present invention.Scope of the present invention is limited by its claims.
Claims (12)
1. a manufacture method for the White-light LED chip of vertical stratification, is characterized in that comprising:
At growth substrates Epitaxial growth indium-gallium-aluminum-nitrogen semiconductor light-emitting film, form the indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification;
The electrode pad of described wafer is formed one deck mask layer;
Described wafer applies one deck be mixed with the silica gel of fluorescent material and carry out hot curing to it, form layer of fluorescent powder silica gel layer;
Cut the fluorescent powder silica gel layer on described electrode pad, make it be separated with other silica gel on wafer table top;
Etch the mask layer on described electrode pad and fluorescent powder silica gel layer, expose electrode pad;
Single chips is obtained to described wafer scribing.
2. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that described mask layer is photoresist cylinder.
3. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 2, it is characterized in that the thickness of described photoresist cylinder is 10 ~ 150 microns, formation method includes but not limited to the one in following method: photoetching process, direct drop photoresist method, shaping photoresist cylinder is bonded in electrode pad method, mask pattern shaping in advance realizes mask by hot-press method, and metallic pattern sticks with glue agent bonding on a wafer.
4. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that described growth substrates includes but not limited to the one in following substrate: Cu, Cr, Si, SiC
,sapphire.
5. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that the method for described cutting includes but not limited to the one in following method: laser cutting, machine cuts.
6. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that the painting method of described fluorescent powder silica gel layer includes but not limited to the one in following method: spin-coating method, spraying process, print process.
7. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, it is characterized in that described fluorescent powder silica gel layer at least covering metal pad 1 micron, at chip edge, described fluorescent powder silica gel layer is at least greater than InGaAlN thin film table top 2 microns.
8. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that the method for described etching includes but not limited to the one in following method: wet etching, and ICP etches, and RIE etches.
9. the manufacture method of the White-light LED chip of a kind of vertical stratification according to claim 1, is characterized in that cutting method that described scribing is cut includes but not limited to the one in following method: laser scribing, mechanical scribing.
10. a White-light LED chip for vertical stratification, comprising:
The indium-gallium-aluminum-nitrogen LED wafer sheet of vertical stratification;
Be positioned at the fluorescent powder silica gel layer on described wafer;
It is characterized in that described fluorescent powder silica gel layer covers all surface except electrode pad of described wafer.
The White-light LED chip of 11. a kind of vertical stratifications according to claim 10, it is characterized in that described fluorescent material at least comprise following in one: yttrium aluminium garnet fluorescent powder, aluminate fluorescent powder, nitride red fluorescent material, green aluminate fluorescent powder.
The White-light LED chip of 12. a kind of vertical stratifications according to claim 10, it is characterized in that the mass ratio of the fluorescent material of described fluorescent powder silica gel layer and silica gel is between 1:10 to 5:1, the thickness of fluorescent powder silica gel layer is less than 100 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310592285.8A CN104659187B (en) | 2013-11-22 | 2013-11-22 | The White-light LED chip and its manufacture method of a kind of vertical stratification |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310592285.8A CN104659187B (en) | 2013-11-22 | 2013-11-22 | The White-light LED chip and its manufacture method of a kind of vertical stratification |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104659187A true CN104659187A (en) | 2015-05-27 |
| CN104659187B CN104659187B (en) | 2018-01-19 |
Family
ID=53250090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310592285.8A Active CN104659187B (en) | 2013-11-22 | 2013-11-22 | The White-light LED chip and its manufacture method of a kind of vertical stratification |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104659187B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531867A (en) * | 2016-12-21 | 2017-03-22 | 福建昌达光电有限公司 | Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof |
| CN108110112A (en) * | 2017-12-15 | 2018-06-01 | 佛山东燊金属制品有限公司 | The technique that silicon substrate GaN blue-ray LEDs epitaxial material makes vertical structure LED |
| CN116246994A (en) * | 2023-05-11 | 2023-06-09 | 广东鸿浩半导体设备有限公司 | Method for temporarily bonding semiconductor wafer to prevent glue overflow |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677701A (en) * | 2004-03-31 | 2005-10-05 | 泰谷光电科技股份有限公司 | Light-emitting device and manufacturing process of the light-emitting device |
| US20100244082A1 (en) * | 2009-03-31 | 2010-09-30 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Quasi-vertical light emitting diode |
| CN102376848A (en) * | 2010-08-27 | 2012-03-14 | 璨圆光电股份有限公司 | Manufacturing method of light-emitting device |
-
2013
- 2013-11-22 CN CN201310592285.8A patent/CN104659187B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677701A (en) * | 2004-03-31 | 2005-10-05 | 泰谷光电科技股份有限公司 | Light-emitting device and manufacturing process of the light-emitting device |
| US20100244082A1 (en) * | 2009-03-31 | 2010-09-30 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Quasi-vertical light emitting diode |
| CN102376848A (en) * | 2010-08-27 | 2012-03-14 | 璨圆光电股份有限公司 | Manufacturing method of light-emitting device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531867A (en) * | 2016-12-21 | 2017-03-22 | 福建昌达光电有限公司 | Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof |
| CN108110112A (en) * | 2017-12-15 | 2018-06-01 | 佛山东燊金属制品有限公司 | The technique that silicon substrate GaN blue-ray LEDs epitaxial material makes vertical structure LED |
| CN116246994A (en) * | 2023-05-11 | 2023-06-09 | 广东鸿浩半导体设备有限公司 | Method for temporarily bonding semiconductor wafer to prevent glue overflow |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104659187B (en) | 2018-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4122739B2 (en) | Light emitting device and manufacturing method thereof | |
| JP6237181B2 (en) | Method for manufacturing light emitting device | |
| CN104393154A (en) | Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source | |
| US9660161B2 (en) | Light emitting diode (LED) components including contact expansion frame | |
| CN104733593B (en) | White light LED part and preparation method thereof based on quantum dot | |
| CN102354723B (en) | Flip semiconductor luminescent device and manufacturing method thereof | |
| CN102270730A (en) | LED (light emitting diode) device free of gold wires | |
| KR20080057876A (en) | Led package and method of manufacturing the same | |
| JP2013526078A (en) | White light emitting LED chip and manufacturing method thereof | |
| JP3282176B2 (en) | Method of forming light emitting diode | |
| TWI446590B (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN106856220A (en) | The flip LED device and its cutting unit and preparation method of wafer level encapsulation | |
| US20070222365A1 (en) | Light-Emitting Diode and Method of Manufacturing the Same | |
| CN101771117B (en) | Light-emitting device and manufacturing method thereof | |
| US20120021542A1 (en) | Method of packaging light emitting device | |
| JP2007067183A (en) | Led package with compound semiconductor light emitting device | |
| CN104659187B (en) | The White-light LED chip and its manufacture method of a kind of vertical stratification | |
| EP3683849A1 (en) | In-line led lamp bead and packaging process thereof | |
| CN104752589A (en) | Preparation method and device for wafer grade white-light LED chip | |
| US10211377B2 (en) | Method for manufacturing light-emitting diode package | |
| CN107611232B (en) | Light emitting diode and preparation method thereof | |
| CN202797075U (en) | Vertically-structured white light LED chip | |
| CN101849295B (en) | Method for manufacturing semiconductor luminescent device | |
| JP2018011088A (en) | Light-emitting device | |
| CN106558639B (en) | The LED component and its cutting unit and production method of wafer grade encapsulation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |
|
| CP01 | Change in the name or title of a patent holder |