CN101849295B - Method for manufacturing semiconductor luminescent device - Google Patents
Method for manufacturing semiconductor luminescent device Download PDFInfo
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- CN101849295B CN101849295B CN2007801010418A CN200780101041A CN101849295B CN 101849295 B CN101849295 B CN 101849295B CN 2007801010418 A CN2007801010418 A CN 2007801010418A CN 200780101041 A CN200780101041 A CN 200780101041A CN 101849295 B CN101849295 B CN 101849295B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Abstract
The invention relates to a method for manufacturing a semiconductor light-emitting device, which comprises the steps of forming a semiconductor multilayer structure supported by a substrate, wherein the semiconductor multilayer structure is configured to emit light of a first color and the substrate or a layer between the substrate and the multilayer structure is substantially opaque; uniformly coating a color-conversion material capable of converting at least a portion of the emitted light to a second color on the semiconductor multilayer structure so as to form a planar color-conversion layer; precuring the color-conversion layer, wherein the pre-curing can be performed at a temperature lower than the normal curing temperature and/or for a shorter curing time than a full-curing process to partially remove the solvent carrier from the colloid mixture; patterning the precured color-conversion layer so as to expose the semiconductor multilayer structure; forming one or more electrodes on the exposed multilayer structure, wherein at least a portion of the electrode surface is not covered by the color-conversion layer; and sufficiently hardening the color-conversion layer so as to enable the color-conversion layer to withstand subsequent wafer dicing. The color-conversion layer is provided with a certain thickness.
Description
Technical field
The present invention is broadly directed to the design and the manufacturing of light emitting semiconductor device.More specifically, the present invention relates to be used to prepare the design and the technology of light emitting semiconductor device with color-conversion structure.
Background technology
The expectation light emitting semiconductor device can lead lighting technology of future generation.For example, the application of high brightness LED (HB-LEDs) more and more widely comprises being applied to the LED traffic lights, very color display and replacement traditional lighting bulb.Particularly white light LEDs development has in recent years been opened the gate for LED uses widely.
Summary of the invention
One embodiment of the present of invention provide a kind of light emitting semiconductor device.This device comprises substrate and by the semiconductor multilayer structure of said substrate supports, wherein said semiconductor multilayer structure is configured to launch first color of light.Said substrate or the layer between said substrate and said sandwich construction are opaque basically.This device also is included in the certain thickness smooth color conversion layer that forms on the said semiconductor multilayer structure, and wherein said color conversion layer comprises and can at least a portion be launched the color-converting material that light converts second color of light to.Can fully solidify said color conversion layer to bear follow-up wafer cutting.
In the modification of this embodiment, said substrate comprises a kind of in the following material or some kinds: silicon (Si); Germanium (Ge); GaAs (GaAs) and metal.
In the modification of this embodiment, said substrate is less than or equal to 30% to the light transmittance of said first color of light.
In the modification of this embodiment, the layer between wherein said substrate and the said sandwich construction is the reflection layer between said semiconductor multilayer structure and said substrate.
In the modification of this embodiment, said color conversion layer comprises the decentralized medium that is used for evenly disperseing said color-converting material.
In another modification of this embodiment, said decentralized medium comprises a kind of in the following material or some kinds: polyimide-based material, silica gel sill and epoxy resin sill.
In another modification of this embodiment, said decentralized medium is a polyimides.
In the modification of this embodiment, said color-converting material comprises fluorescent material.
In the modification of this embodiment, said color conversion layer comprises the mixture that polyimide-based decentralized medium and fluorescent material are formed.
In the modification of this embodiment, this device is included at least one electrode that forms on the said semiconductor multilayer structure, and wherein the said electrode surface of at least a portion can not covered by said color conversion layer.
In the modification of this embodiment, said semiconductor multilayer structure comprises In
xGa
yAl
1-x-yN (0≤x≤1,0≤y≤1) sill.
In the modification of this embodiment, light of being changed and the light of not changed mix a kind of substantial white light of generation.
Description of drawings
Fig. 1 illustrates the structure of white light LEDs.
Fig. 2 A illustrates the white light LEDs that comprises smooth color conversion layer according to an embodiment of the invention.
Fig. 2 B provides a flow chart and is used to explain the White-light LED chip that contains reflection layer according to an embodiment of the invention.
Fig. 3 provides a flowchart text in the step of patterned electrodes on color conversion LED according to an embodiment of the invention.
Fig. 4 illustrates the exemplary step one by one for preparing the LED with color-conversion structure according to an embodiment of the invention through flip-over type wafer Bang Dingfa.
Embodiment
Provide following description, so that those skilled in the art can make and use the present invention, and these descriptions provide under concrete application and requirement background thereof.The various modifications of disclosed embodiment will be apparent to those skilled in the art, and under the situation of not leaving spirit of the present invention and scope, the General Principle that limits here can be applied to other embodiment and application.Thereby, the invention is not restricted to shown embodiment, but consistent with the wide region of claim.
White light LEDs is normally based on utilizing one or more fluorescent material (like phosphor) to coat a kind of design of the light-emitting area of luminescent device such as GaN base blue-ray LED.When blue light sent penetration phosphor, a part of blue light was handled through fluorescence and is converted to more long wavelength's light by fluorescent material, obtains gold-tinted, ruddiness or green glow.When these new color of light and the blue light compound tense of not changed, just can produce white light emission.Fig. 1 illustrates the typical structure of white light LEDs 100.
As shown in Figure 1, white light LEDs 100 is included in the InGaAlN based semiconductor light emitting structure 102 of preparation on the Sapphire Substrate 104.Semiconductor light emitting structure 102 constitutes InGaAlN base LED chip 106 with Sapphire Substrate 104.It should be noted that because Sapphire Substrate is transparent, the light of launching both can pass the end face of led chip 106 and propagate also and can propagate from sidewall and bottom surface.Therefore, for obtaining about the end face of led chip 106 and sidewall white light emission of homogeneous all, hope be to utilize upper surface and side that fluorescent material applies led chip 106 uniformly with encirclement led chip 106.
As shown in Figure 1, led chip 106 " is buried " in the cup-shaped groove of filling with phosphor mixture 108.This phosphor mixture is usually by being made by the homodisperse fluorescent material of epoxy resin.Phosphor mixture 108 coats the end face of led chip 106 and four whole sidewalls, just forms white-light LED structure 100.It should be noted that this white-light LED structure generally is through at first led chip 106 being placed on the bottom of cup-shaped groove, deposit slightly phosphor mixture subsequently to groove, be filled to until mixture that (as on dotted line) obtains on the surface of groove.It should be noted that hope is that the dome 110 of phosphor mixture 108 can be used for compensating the optical path difference between light that penetrates the emission of device middle part and the light of around device edge, launching.
Because comprising, the preparation process of above-mentioned white light LEDs utilize phosphor mixture to coat the sidewall of single led chip, so after the wafer cutting, usual hybridization is during single Chip Packaging process, to be applied on the LED.Therefore, the white light LEDs of this chip base prepares process and often has the cost height, yields poorly and the problem of color homogeneity difference.For example, when phosphor mixture is applied to when single led, device is difficult to obtain identical dome geometry.The non-homogeneous geometry of single white light LEDs can cause the color conversion of non-homogeneous subsequently.Therefore, even with identical wafer manufacturing, also be difficult to guarantee the color homogeneity of this white light LEDs row.
In addition, in the same unit of white light LEDs, like LED 100, the optical path difference of the light that the geometry of the geometry of phosphor mixture 108 and led chip 106 all can cause sending from end face and sidewall.For instance, compare with the light beam that sends from end face 114 via the light beam 112 that sidewall spills, the propagation distance of penetration phosphor mixture 108 is obviously longer.Therefore change and when light beam 112 that quantity causes and the official post between the light beam 114 get light and leave phosphor mixture 108 various colors takes place and mix.As a result, show more blue light in the central area from the light of white light LEDs 100, and show more gold-tinted, thereby produce luminous pattern heterogeneous towards fringe region.
It should be noted that not only the problem of foregoing description can appear in Sapphire Substrate, any substrate that can be used for supporting the LED structure also has these problems.In addition, these problems not only influence the color homogeneity of white light LEDs, and can influence and utilize fluorescent material to carry out the color homogeneity of LED of the other types of color conversion.
TED with plane color-conversion structure
Embodiments of the invention provide a kind of LED design with smooth color-conversion structure.Particularly, on the almost opaque substrate of the light that LED is sent, form LED, formation has certain thickness color-conversion structure on semiconductor LED subsequently.In addition, embodiments of the invention provide a kind of technology for preparing color conversion LED.LED compares with conventional white light, and color conversion LED can produce the color of light of high homogeneity, reaches significantly lower preparation cost simultaneously.More specifically, color-conversion structure is during wafer scale prepares process, on LED, to prepare, rather than after the wafer cutting, on single led, prepares.
Fig. 2 A illustrates the White-light LED chip 200 that comprises smooth color conversion layer according to an embodiment of the invention.The semiconductor multilayer structure 204 that white light LEDs 200 comprises substrate 202 and on substrate 202, forms.In one embodiment of the invention, semiconductor multilayer structure 204 is semiconductor light emitting structures, and it comprises the active layer that is sandwiched between upper strata and the bottom.It should be noted that upper strata or bottom can comprise extra play, mix or p-type doping coating layer and/or resilient coating like the n-type.In addition, although the coating layer that in some documents, a relates to conduct and the direct-connected doped layer of active layer, coating layer can comprise one or more layers material layer.In one embodiment, the upper strata can comprise n-type layer, and bottom can comprise p-type layer.In one embodiment, the layer in the semiconductor multilayer structure 204 is by In
xGa
yAl
1-x-yN (0≤x≤1,0≤y≤1)-sill is formed.This material comprises binary, the compound of ternary or quaternary, and like GaN, InGaN, GaAlN, and InGaAlN.
In certain embodiments, the light that sends of 202 pairs of semiconductor multilayer structures 204 of substrate is transparent hardly.In one embodiment, to the glow color of sandwich construction 204, substrate 202 demonstrates and is less than or equal to 30% light transmittance.In another embodiment, the light that substrate is launched sandwich construction 204 is opaque, and this spills from the sidewall of substrate 202 with regard to having been avoided light.Discuss as following, because the light that spills can not be unfavorable for mentioned white light LEDs so this light leaks through the color-converting material conversion.
The result who uses opaque substrate is, on a small quantity or the light of not launching can pass sidewall and the bottom of substrate 204 and spill.Although some emission light can spill from the sidewall of semiconductor multilayer structure 204, because multilayered semiconductor 204 has only several micron thick usually, so this light leak can be left in the basket with luminous the comparing of end face.
White light LEDs 200 further is included in the certain thickness color conversion layer 206 that has that forms on the semiconductor multilayer structure 204.Particularly, color conversion layer 206 is included in the color-converting material that is evenly dispersed like epoxy resin in the medium.In one embodiment of the invention, the colloidal mixture that on semiconductor multilayer structure 204, is coated with color-converting material (like fluorescent material) and epoxy resin through spin-coating method forms color conversion layer 206, and the color conversion layer of curing mixture to obtain to solidify.It should be noted that this deposition technique helps obtaining certain thickness color conversion layer at device surface.In one embodiment, color conversion layer 206 is thin layers.
It should be noted, because sidewall through substrate 202 and bottom or the light leak of the sidewall of ray structure are considerably less, so color-converting material can only be coated on the last light-emitting area of semiconductor multilayer structure 204.This just makes color-converting material on entire wafer, to deposit prior to the wafer cutting, thereby avoids forming single led chip in order to carry out back-cutting manufacturing with all faces of fluorescent material coating chip.Therefore, make color conversion LED device cost and can effectively reduce, can control homogeneity easily simultaneously.In another embodiment, manyly prepare individual devices on by the patterned substrate of the table top of trench isolations having.The coating of color-converting material can be carried out after device preparation, and preferably after the edge of each device of removal, carries out, the sidewall that coating also can covering device like this.This method can further reduce light leak.
Embodiments of the invention can use different types of decentralized medium to be used for color-converting material as carrier.These decentralized media can include but not limited to: silica gel, epoxy resin, but polyimides and other solidity polymeric materials.Though it should be noted that silica gel thermal stability and chemical stability are high, cost is higher usually.Comparatively speaking, epoxy resin cheaply but unstable.Particularly silica gel and epoxy resin all are very difficult to etching after solidifying, so these two kinds of materials are not too desirable.On the other hand, polyimides can fully solidify and still can be by the alkaline etchant etching after solidifying under the low relatively temperature.This characteristic makes polyimides and photoetching treatment more compatible.Make the photoetching process of white light LEDs electrode when describing polyimides as decentralized medium with the lower part.
A part of light that color-converting material can will be launched converts second color of light (like gold-tinted) to from first color of light (like blue light), propagates the light that residue is not changed simultaneously.In one embodiment of the invention, this color-converting material is a fluorescent material, like YAG fluorescent material or TAG fluorescent material.The fluorescent material of blue-light excited these types can send gold-tinted, and gold-tinted produces the white light of essence again with the photoreactivation of not changed.It should be noted that color-converting material can comprise the fluorescent material of other types, like silicate fluorescent powder.The color that produces through color conversion layer 206 can include but not limited to: green, and yellow, orange, the mixing of red or multiple color.Therefore, the corresponding multiple color of color-converting material can comprise the mixing of dissimilar fluorescent materials.It should be noted, because color conversion layer 206 has certain thickness across chip surface, so led chip can produce highly homogeneous color.
Return Fig. 2 A, white light LEDs 200 also comprises electrode 208.It should be noted that electrode 208 is connected with the upper strata of semiconductor multilayer structure 204 through ohmic contact.Therefore in general color conversion layer 206 is non-conductive, direct preparation electrode 208 or be worthless with the surface of color conversion layer 206 coated electrodes 208 on color conversion layer 206.In one embodiment of the invention, another electrode can be in the preparation of the back side of substrate 202.In addition, patternable color conversion layer 206 is to form electrode position.In another embodiment, electrode and optional corresponding connecting line can prepare prior to being coated on the device of color conversion layer.The benefit of doing like this is to guarantee good Ohmic contact between electrode and the device.
Fig. 2 B illustrates the White-light LED chip 210 that comprises reflection layer 212 according to an embodiment of the invention.It should be noted that be included in the reflection layer 212 that forms between substrate 202 and the semiconductor multilayer structure 204 except additional, structure is identical substantially with chip 200 for chip 210.Shown in Fig. 2 A,, can be absorbed by substrate 202 so launch light greatly because the light transmittance of the light that 202 pairs of substrates send from sandwich construction 204 is very low.This light absorption meeting reduces the light emission effciency.Through between absorbefacient substrate and light emission structure, inserting the reflector, quite a few emission light of incident can be reflected back into ray structure on this interface, thereby has increased the luminous efficiency of white light LEDs 210.In one embodiment of the invention, reflection layer is silver (Ag) layer.
In one embodiment of the invention, cut the follow-up wafer of processing (it comprises substrate 202, sandwich construction 204, color conversion layer 206 and electrode 208) and form single led chip, and then obtain white light LEDs 200 and 210.It should be noted, because color conversion layer 206 deposition before the wafer cutting, so the sidewall of sandwich construction 204 and substrate 206 does not have color-converting material.
Although use the innovation structure of white light LEDs as an example shows color conversion LED, the present invention can be applicable to can glow color be converted to any semiconductor LED of another kind of color of light.
The step of patterned electrodes on color conversion LED
Fig. 3 provides a flow chart and is used to explain the step of patterned electrodes on color conversion LED according to an embodiment of the invention.
During operation, system chooses the wafer (operation 302) that has luminous sandwich construction but do not prepare electrode.System's colloidal mixture that then deposition fluorescent material and polyimides are formed on luminous sandwich construction, to form color conversion layer, wherein fluorescent material is evenly disperseed (operation 304) by polyimides.In one embodiment of the invention, system deposits colloid through spin-coating method and obtains certain thickness color conversion layer on wafer.It should be noted that the method that is coated with photoresist (PR) during this spin coating and the photoetching process is similar.Other technologies also can be applicable to be coated with colloidal mixture like spraying.
Next, the gluey color conversion layer of system's precuring, polyimides is by partly solidified (operation 306).Particularly, precuring can be under the subnormal curing temperature of temperature and/or is shorter than curing time in time of full solidification process and carries out, partly to remove the solvent carrier of colloid admixture.As a result, to a certain degree hardening but still can be of color conversion layer by the alkaline etchant etching.
Then, system is Using P R (like positive PR) layer on color conversion layer, and photoetching treatment PR layer is to be patterned in the electrode (operation 308) on the color conversion layer.Develop through developer PR then, in color conversion layer, to form electrode zone (operation 310).It should be noted that this developing process has not only been removed the PR that exposes, and the color conversion layer of the precuring below having etched away in the electrode corresponding region, and then is exposed to following luminous sandwich construction.In one embodiment of the invention, developer is a TMAH base developer.It should be noted that in certain embodiments, electrode can prepare earlier on device, and the contact wiring can be connected prior to the color conversion layer deposition with electrode.
Afterwards, color conversion layer is finally solidified in system, makes polyimides full solidification (operation 312).Be equipped with color conversion LED through the customization of flip chip nation
Fig. 4 illustrates according to an embodiment of the invention through flip chip nation and decides the get everything ready exemplary step one by one of LED of color-conversion structure of legal system.
In operation A, graphical and etching initial silicon growth substrates 402, many to form by the table top of trench isolations.Each table top limits one and is used to the single led surf zone of growing.Because stress and surface area are proportional, so divided substrate can effectively reduce in-plane stress.It should be noted, in the operation A of Fig. 4, a complete table top (in the centre) and two part table tops (in both sides) only have been described.
In operation B, semiconductor multilayer structure 404 extension on above-mentioned substrate table top forms.It should be noted, in one embodiment, table top be fully isolated and groove enough dark, the epitaxial growth of different layers can not produce any connection between two single structures like this, thereby obviously reduces and the lattice relevant stress of growing that do not match.In one embodiment of the invention, sandwich construction 404 is In
xGa
yAl
1-x-yN (0≤x≤1,0≤y≤1)-base semiconductor sandwich construction.
In operation C, the fixed layer 406 of deposition nation on sandwich construction 404.Because nation's fixed layer metal can be deposited on the sidewall and make the short circuit of P-N knot, thus one embodiment of the present of invention optional be before fixed layer 406 deposition of metal nation, on sandwich construction 404, form insulating barrier.It should be noted that decide material as long as be suitable as nation, metal or nonmetallic materials all can be used.In one embodiment, nation decide material be the gold.
In operation D, new supporting construction 408 is adhered to Jin Bangding layer 406.In one embodiment, new supporting construction 408 is silicon substrates.Perhaps another is selected, and new supporting construction 408 is the Ge substrate, GaAs substrate or metal substrate.
In operation E, utilize the wet etching method to peel off initial silicon growth substrates 402, the result exposes the below of sandwich construction 404.It should be noted that total is reversed in operation E, and sandwich construction 404 is supported by Jin Bangding layer 406 and new supporting construction 408.It should be noted that equally Jin Bangding layer 406 can be used as reflection layer.
In operation F, color conversion layer deposits on sandwich construction 404.Particularly, color conversion layer 410 can be through at first utilizing the surface of the fluorescent material coating multiple structure 404 of being disperseed by the polyimides homogeneous media, and the polymeric layer that again polyamide is cured to hardening obtains.It should be noted, color conversion layer 410 is final solidify before, can on sandwich construction 404, prepare one or several electrodes as foregoing description.
At last, the operation F in cut crystal to obtain single color conversion LED.It should be noted that wafer cutting can be passed through the part groove and above wafer, carries out, or carries out from the back side of wafer.It should be noted,, do not cut apart substrate and also can be used to make color conversion LED according to identical operations A to F although above-mentioned manufacture process is to describe cutting apart under the background of substrate.
The aforementioned description of the embodiment of the invention is merely explanation and purpose of description and provides.They are not exhaustive, or are not intended to the present invention is constrained to form disclosed herein.Thereby to those skilled in the art, many modifications and variation are conspicuous.In addition, above-mentioned disclosure is not to be intended to limit the present invention.Scope of the present invention is limited accompanying claims.
Claims (11)
1. method of making light emitting semiconductor device, this method comprises:
Choose substrate;
Formation is by the semiconductor multilayer structure of said substrate supports;
Wherein said semiconductor multilayer structure is configured to launch first color of light; And
Therefore wherein said substrate or the layer between this substrate and this sandwich construction are opaque, help the absorption or the reflection of the light that said sandwich construction launches;
With comprising that can a part be launched color-converting material that light converts second color of light to evenly applies said semiconductor multilayer structure and form smooth color conversion layer;
The said color conversion layer of precuring; Precuring is under the subnormal curing temperature of temperature and/or be shorter than curing time in time of full solidification process and carry out, partly to remove the solvent carrier of colloid admixture;
The said color conversion layer of graphical said precuring is to expose said semiconductor multilayer structure; And
On the semiconductor multilayer structure of said exposure, form one or several electrodes, wherein the said electrode surface of at least a portion is not covered by said color conversion layer;
Wherein said color conversion layer is fully solidified to bear follow-up wafer cutting; And
Wherein said color conversion layer has certain thickness; And
Cutting comprises the wafer of substrate, to obtain light emitting semiconductor device.
2. method according to claim 1 is characterized in that said method further is included in the said wafer of cutting and solidifies said color conversion layer before, makes the abundant hardening of said color conversion layer to bear follow-up wafer cutting.
3. method according to claim 1 is characterized in that said color conversion layer comprises the mixture that polyimide-based decentralized medium and fluorescent material are formed.
4. method according to claim 1 is characterized in that the said layer between said substrate and the said sandwich construction is a reflection layer.
5. method according to claim 1, it is a kind of or some kinds to it is characterized in that said substrate comprises in the following material: silicon (Si); Sapphire; Carborundum (SiC); Germanium (Ge); GaAs (GaAs); And metal.
6. method according to claim 1 is characterized in that said substrate is less than or equal to 30% to the light transmittance of said first color.
7. method according to claim 1 is characterized in that said color conversion layer comprises a kind of decentralized medium that is used for evenly disperseing said color-converting material.
8. method according to claim 7 is characterized in that said decentralized medium comprises a kind of in the following material or some kinds: polyimide-based material, silica gel sill and epoxy resin sill.
9. method according to claim 1 is characterized in that said color conversion layer material comprises fluorescent material.
10. method according to claim 1 is characterized in that said semiconductor multilayer structure comprises In
xGa
yAl
1-x-yThe N-sill, 0≤x≤1,0≤y≤1.
11. method according to claim 1 is characterized in that the white light that the mixing of light of being changed and the light of not changed produces.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2007/002945 WO2009046576A1 (en) | 2007-10-12 | 2007-10-12 | Semiconductor light-emitting device with a color-conversion structure |
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| CN101849295A CN101849295A (en) | 2010-09-29 |
| CN101849295B true CN101849295B (en) | 2012-11-28 |
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| DE102009048401A1 (en) | 2009-10-06 | 2011-04-07 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component |
| CN113410170B (en) * | 2021-06-16 | 2023-12-08 | 武汉新芯集成电路制造有限公司 | Method for improving chip picking efficiency, manufacturing method of three-dimensional integrated chip and chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747190A (en) * | 2004-09-10 | 2006-03-15 | 晶元光电股份有限公司 | Luminescent element of semiconductor and production thereof |
| TW200701520A (en) * | 2005-01-11 | 2007-01-01 | Semileds Corp | Systems and methods for producing white-light emitting diodes |
| TW200717879A (en) * | 2005-09-28 | 2007-05-01 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
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| JPH10209505A (en) * | 1997-01-17 | 1998-08-07 | Stanley Electric Co Ltd | Light emitting diode and its manufacture |
| JPH10261818A (en) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | Light-emitting semiconductor device |
| CN1988188A (en) * | 2005-12-23 | 2007-06-27 | 香港应用科技研究院有限公司 | Light emitting diode crystal particle with fluorescence layer structure and its producing method |
| JP4315162B2 (en) * | 2006-03-10 | 2009-08-19 | パナソニック電工株式会社 | Method for manufacturing light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747190A (en) * | 2004-09-10 | 2006-03-15 | 晶元光电股份有限公司 | Luminescent element of semiconductor and production thereof |
| TW200701520A (en) * | 2005-01-11 | 2007-01-01 | Semileds Corp | Systems and methods for producing white-light emitting diodes |
| TW200717879A (en) * | 2005-09-28 | 2007-05-01 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
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Address after: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: LATTICE POWER (JIANGXI) Corp. |