CN100474640C - Semiconductor light emitting devices and sub-support and methods for forming the same - Google Patents
Semiconductor light emitting devices and sub-support and methods for forming the same Download PDFInfo
- Publication number
- CN100474640C CN100474640C CNB2004800362543A CN200480036254A CN100474640C CN 100474640 C CN100474640 C CN 100474640C CN B2004800362543 A CNB2004800362543 A CN B2004800362543A CN 200480036254 A CN200480036254 A CN 200480036254A CN 100474640 C CN100474640 C CN 100474640C
- Authority
- CN
- China
- Prior art keywords
- cavity
- luminescent device
- substrate
- submounts
- conductive path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 238000005538 encapsulation Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 23
- 230000009466 transformation Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000012812 sealant material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 abstract description 4
- 239000011797 cavity material Substances 0.000 description 66
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000009434 installation Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- -1 siloxanes Chemical class 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 101100101616 Drosophila melanogaster uex gene Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241001248531 Euchloe <genus> Species 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
Description
Related application
The application's book requires the U.S. Provisional Patent Application No.60/528 that is entitled as ＂ LED Package IncluingRecsssed Submount (comprising the LED encapsulation of caviton support) ＂ of filing on December 9th, 2003, the priority of 054 (the file number No.P0393 of agency), it is open, and attached in full this is for referencial use.
Background of invention
The present invention relates to light emitting semiconductor device and manufacture method thereof, more particularly, relate to encapsulation and method for packing that light emitting semiconductor device is used.
The known semiconductor luminescent device is used for various light source purposes.For example, light-emitting diode (or LED) is well-known solid electronic device, can produce light when applying enough voltage.Light-emitting diode comprises that usually is deposited on a substrate, such as the p-n junction that forms in the epitaxial loayer on sapphire, silicon, carborundum, GaAs or the like.The light wavelength that this LED produces distributes and usually depends on the material of making this p-n junction and comprise that the light of this device produces the structure of the thin epitaxy layer in zone.
Generally, LED comprises n-type substrate, the n-type epi region that forms and the p-type epi region that forms on n-type epi region on this n-type substrate.For the ease of applying voltage to this device, an anode ohmic contact (general, be the p-type epitaxial loayer that exposes) can be on the p-of this device type zone, formed and cathode ohmic contact (such as this substrate or the n-type epitaxial loayer that exposes) can be on the n-of this device type zone, formed.Thereby this ohm contact may provide contact node for this LED is connected to electronic circuit.
Illustrational as Fig. 1, traditional LED70 can be encapsulated in the standard packaging 72, can comprise a conductive/reflective support rotor 73, and itself can be connected to anode/cathode lead 75A.This led chip 70 generally is installed in the cup that has silver epoxy.The anode/cathode of this led chip 70 can be wire bonded to anode/cathode lead 75B.Whole then encapsulation is passable, for example, is encapsulated in the transparent epoxy resin 78.For the led chip of emission white light, sealant 78 can comprise material for transformation of wave length, such as the phosphorus of wavelength Conversion.In a typical white light LEDs is used, from some blue light excitation wavelength transition material of these chip 70 emissions, so that the long light of emission wavelength, such as gold-tinted.The light long from non-switched ＂ blue light of the ＂ of this chip and the wavelength of launching from phosphorus combines, and synthesize white light can be launched from this encapsulation.
The flip-chip installation method of LED relates to this LED is installed on the submounts, and substrate up.Can extract light then and pass through this transparent substrate emission.The flip-chip installation method may be the favourable technology of installing based on the LED of SiC.Because SiC usually has the refractive index higher than GaN, may not internal reflection (that is reflected back is based on layer of GaN) on this GaN/SiC interface at the light that light emitting area produces.When using the known chip forming technique of some prior art, can provide the light extraction of improvement based on the flip-chip installation method of the LED of SiC.SiC LED Flip-Chip Using can also have other advantage, such as improving heat extraction/dissipation, depends on the specific application of this chip, and this may be favourable.
No.2002/0063520A1 has described moulding phosphor plate LED device in advance at the U.S. Patent application bulletin.U.S. Patent No. 5,003,357 have described light emitting semiconductor device.U.S. Patent No. 6,642,550 described can the single line wire bond and the silicon submounts of electrostatic discharge (ESD) protection (ESD) is provided for light-emitting diode.
Some problem that traditional white light LEDs encapsulation generally runs into relates to the emission uniformity of this encapsulation generation and the size of optical imagery.Traditional encapsulation often has big optical imagery size, and this generally is the function of metal support rotor size.In addition, because material for transformation of wave length may be distributed in one and led chip size on the bigger zone, also because the accurate distribution of material for transformation of wave length may be difficult to control in the coating, uniformity and reproducibility that light is exported may go wrong.
Abstract of invention
Embodiments of the invention provide a kind of methods of forming semiconductor light emitting device packages.This luminescent device is arranged in the cavity of a submounts.Solid-state wavelength conversion member be positioned at this luminescent device on this submounts above, receive from the light of this luminescent device emission and to it and carry out wavelength Conversion.This solid-state wavelength conversion member can be the wavelength conversion member of the rigidity of the glass, silicon and/or the hardening epoxy resin that have material for transformation of wave length on it.This material for transformation of wave length can be a phosphorus.This wavelength conversion member with this luminescent device opposite surfaces on can be flat and/or be recessed.Can determine to be located on submounts again after its wavelength conversion characteristics in this wavelength conversion member of test.
In other embodiments of the invention, the submounts that light emitting semiconductor device is used comprises Semiconductor substrate, has a cavity on it, is configured to admit this luminescent device.First pad in this cavity is located to such an extent that be connected to the first node that is received in the luminescent device in this cavity.Second pad in this cavity is located to such an extent that be connected to the Section Point of the luminescent device of location on it.This cavity can comprise base plate and sidewall, and sidewall and base plate are spent at least at an angle of 90.This first and second pad can be to be positioned on the base plate of this cavity.
In other embodiments of the invention, the height of this cavity from this base plate to the Semiconductor substrate end face equals the height of the luminescent device that will admit therein at least.The admittance groove can be arranged on the end face of this Semiconductor substrate, and is adjacent with this cavity.This groove can be configured to admit solid-state Wavelength changing element, and this Wavelength changing element be positioned at this cavity above, the light of the luminescent device emission receiving in this cavity.Reflective material coatings can be arranged on the base plate and/or sidewall of this cavity.
In other embodiments of the invention, this Semiconductor substrate comprises first conductive path, passes this substrate extends to this Semiconductor substrate from this first pad outer surface.Second conductive path passes this substrate extends to this substrate from this second pad outer surface.This first and second conductive path can extend to the downside of the outer surface of this Semiconductor substrate.The first outside installation pad and the second outside pad of installing can be positioned on the outer surface of this Semiconductor substrate.This first conductive path can extend to this first outside installation pad, and this second conductive path can extend to this second outside pad of installing.
In other embodiments of the invention, the zener diode junctions of integrated reversal connection connects this first and second conductive path, so that the luminescent device in being installed in this cavity provides electrostatic discharge protective.The zener diode junctions of this reversal connection can comprise the first conductivity type doped region of semi-conducting material of at least a portion of at least a portion that forms this first conductive path and second conductive path; Doped region with the opposite conductivity type of semi-conducting material is positioned between them.First conductivity type can be the n-type, and opposite conductivity type can be the p-type.This n-type doped region can contact with separately one of first and second pads or this first and second outside pad of installing.This Semiconductor substrate can be a p-type substrate, and n-type doped region can be the trap of the n-type dopant in this p-type substrate.This first and second conductive path can also comprise the throughhole portions metal charge separately that extends from first kind doped region separately.
In other embodiments of the invention, as above-described, luminescent device encapsulation comprises submounts, also comprises the sealant material between this luminescent device and this wavelength conversion member in the cavity, and sealant material can have the refractive index at least about 1.5.
In other embodiments of the invention, luminescent device encapsulation comprises a Semiconductor substrate that has cavity on it.This cavity can have base plate and sidewall, is at least about 90 ° with respect to the angle of base plate.First pad in this cavity is located to such an extent that be connected to the first node that is received in the luminescent device in this cavity, locatees to such an extent that be connected to the Section Point of locating the luminescent device on it and be connected to second pad this cavity in.First conductive path passes this substrate and extends to the outer surface of this Semiconductor substrate from first pad, and second conductive path passes this substrate extends to this substrate from this second pad outer surface.Luminescent device is received in this cavity and has the node that is connected to first and second pads.The zener diode junctions of integrated reversal connection connects this first and second conductive path, for this luminescent device provides electrostatic discharge protective.Solid-state wavelength conversion member be positioned at this luminescent device on the end face of this Semiconductor substrate above carry out wavelength Conversion so that receive from the light of this luminescent device emission and to it.
In other embodiments of the invention, the method for the submounts that the formation light emitting semiconductor device is used is included in and forms a cavity in the Semiconductor substrate, is configured to admit luminescent device.This cavity has base plate and is at least about 90 ° sidewall with respect to the angle of this base plate.First conductive path forms to such an extent that extend to the outer surface of this substrate from this cavity, and second conductive path forms to such an extent that extend to the outer surface of this substrate from this cavity.An end of first conductive path of Xing Chenging forms first pad in this cavity thereon, and an end that forms second conductive path thereon forms second pad in this cavity.
In other embodiments of the invention, luminescent device encapsulation is to utilize submounts by this luminescent device is positioned in this cavity, makes the first node of this luminescent device be connected to this first pad and the Section Point of this luminescent device is connected to this second pad and forms.Solid-state wavelength conversion member be positioned at this luminescent device on the substrate above, receive from the light of this luminescent device emission and to it and carry out wavelength Conversion.This solid-state wavelength conversion member can be to test before on this substrate of location, so that determine its wavelength conversion characteristics.
The Short Description of accompanying drawing
Fig. 1 is the schematic cross sectional side views of a traditional luminescent device encapsulation;
Schematic cross sectional side views of Fig. 2 according to the luminescent device encapsulation of some embodiments of the present invention;
Fig. 3 A and 3B are schematic cross sectional side views, and expression is according to the Wavelength changing element of some embodiment of the present invention;
Figure 4 and 5 are the schematic cross sectional side views according to the luminescent device encapsulation of other embodiments of the invention;
Fig. 6 illustrates the operation that forms the submounts that light emitting semiconductor device uses according to some embodiment of the present invention;
Fig. 7 illustrates according to some embodiment of the present invention and forms the operation that light emitting semiconductor device is used;
Describe in detail
Now will describe the present invention more fully with reference to accompanying drawing hereinafter, represent embodiments of the invention in the accompanying drawing.But the present invention can implement with many different forms, thereby should not be construed as and be limited to the embodiment that proposes here.But it is in order to make the disclosure thorough and complete, to pass on scope of the present invention to the professional and technical personnel fully that these embodiment are provided.For the purpose of clear, the size and the relative size in accompanying drawing middle level and zone can be exaggerated.Similarly number all refers to similar elements.
Should be understood that when an element when bing referred to as ＂ ＂ or ＂ on another element of ＂ ＂ and be connected to another element of ＂ such as layer, zone or a substrate, it can be directly on another element, or be attached thereto or also may have intermediary element.It is farther that it will be in beyond this device other parts than this element (stretch out).In addition, relative terms such as ＂ below ＂ or ＂ in the above ＂ can be used for describing the relation of a layer or zone to another layer or zone here with respect to substrate or basal layer, as the accompanying drawing illustrated.Should be understood that these terms are also to comprise the direction that this device is different the direction of wanting in accompanying drawing to be described.The direct ＂ of term ＂ is meant there is not intermediary element.As what here use, term ＂ and/or ＂ comprise one or more any and all combinations in this relevant list item.
Can be used for describing different elements, assembly, zone, layer and/or part here although should be understood that first, second grade of term, these elements, assembly, zone, layer and/or part should not be subjected to the restriction of these terms.These terms only are used for an element, assembly, zone, layer or part are different from another zone, layer or part.Thereby, not breaking away under the situation about teaching of the present invention, first element of discussing below, assembly, zone, layer or part may be called as second element, part assembly, zone, layer or part.
Will correctly estimate as the professional and technical personnel, semiconductor die garden sheet and die chip describe although The present invention be directed to, and such chip can cut into any size.Correspondingly, the invention is not restricted to the relative size and the interval of accompanying drawing illustrated.In addition, for ease of drawing with for the purpose of being easy to illustrate, some feature of accompanying drawing is illustrational with the size of exaggeration.
As what here use, term ＂ light emitting semiconductor device ＂ can comprise light-emitting diode, laser diode and/or other semiconductor device, possess: one or more semiconductor layers, it can comprise silicon, carborundum, gallium nitride and/or other semi-conducting material; Substrate can comprise sapphire, silicon, carborundum and/or other microelectronic substrate; With one or more contact layer, can comprise metal and/or other conductive layer.In certain embodiments, can provide emission ultraviolet light, blue light and/or green light-emitting diode (＂ LED ＂).
Now will describe some embodiment of the present invention,, usually all quote based on the light-emitting diode on the substrate of carborundum based on gallium nitride for the ease of understanding the description of being done here.But the professional and technical personnel will be appreciated that other embodiments of the invention can be based on the various different combination of substrate and epitaxial loayer.For example, combination can comprise the AlGaInP diode on the GaP substrate; InGaAs diode on the GaAs substrate; AlGaAs diode on the GaAs substrate; SiC or sapphire (Al
2O
3) SiC diode on the substrate; Diode on gallium nitride, carborundum, aluminium nitride, sapphire, zinc oxide and/or other the substrate based on nitride.
Therefore, for example, light emitting semiconductor device can be LED or the laser based on gallium nitride that forms on the silicon carbide substrates, as Cree, and Inc.of Durham, North Carolina produce and market.The present invention can be suitable for following patent in LED and/or the laser described be used:U.S. Patent No. 6,201,262; 6,187,606; 6,120,600; 5,912,477; 5,739,554; 5,631,190; 5,604,135; 5,523,589; 5,416,342; 5,393,993; 5,338,944; 5,210,051; 5,027,168; 5,027,168; 4,966,862; 4,918,497, it is disclosed in here, and all attached in full this is for referencial use.2003 announced January 9 is entitled as ＂ GroupIII Nitride Based Light Emitting Diode Structures With a Quantum Welland Superlattice; Group III Nitride Based Quantum WellStructures andGroup III Nitride Based Superlattice Structures (with SQW based on the light emitting diode construction of III group-III nitride and superstructure based on III group-III nitride quantum well structure with based on the superstructure of III group-III nitride) the United States Patent (USP) bulletin No.US 2003/0006418A1 of ＂, and the United States Patent (USP) bulletin No.US2002/0123164A1 that is entitled as ＂ Light Emitting Diodes Including Modifications for LightExtraction and Manufacturing Methods Therefor (comprising that light extracts improved light emitting diode and is used for the manufacture method of this purpose) ＂ has described other suitable LED and/or laser instrument.
In addition, phosphor coating LED, the U.S. Patent application book sequence number No.10/659 that is entitled as ＂ Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls andFabrication Methods Therefor (the phosphor coating light-emitting diode and the manufacture method that is used for this purpose that comprise tapered sidewalls) ＂ such as filing on September 9th, 2003,241 is described, it is open, and attached in full this is for referencial use, also is applicable at embodiments of the invention and uses.These LED and/or laser can be configured to move to such an extent that pass this substrate and carry out light emission.In such embodiments, this substrate can form pattern, so that strengthen the light output of this device, as, for example, described at above-listed United States Patent (USP) bulletin No.US 2002/0123164 A1.
In certain embodiments of the present invention, the encapsulation that installation light-emitting diode (LED) chip is used comprises a semiconductor submount, comprises a cavity on it, in order to admit led chip.This cavity can comprise base plate and sidewall, is at least 90 ° with respect to the angle of this base plate.This encapsulation can also comprise anode and the cathode pad on this cavity floor at least, in order to anode and the cathode contact of enclosing LED.The degree of depth of this cavity can the big slightly height of mounted LEDs chip thereon.Conductive through hole connects and can pass this substrate and stretch, and electric going up be connected to outside separately installation pad to anode and cathode pad, and the latter can be installed on one or more exterior side wall of this submounts.Specifically, can use such conductive through hole to connect, wherein this to be encapsulated in be insulation and/or semi-insulated in nature.In certain embodiments, the outside pad of installing forms on the downside of this submounts.The base plate of this cavity and sidewall surfaces can have reflecting material, such as silver coating to increase reflectivity.
In certain embodiments of the present invention, can surround and protect the led chip that is installed in this cavity with the optics transparent encapsulant.The sealing agent can have about 1.5 or bigger refractive index, and this can reduce the reflection on this chip/encapsulant boundary, to improve light extraction.The outside pad of installing can form by plating and other method on the outer surface of this submounts.
In certain embodiments, the Wavelength changing element of rigidity can be glass, siloxanes, epoxy resin or any other optically transparent material that is soaked with material for transformation of wave length, and can surmount led chip and cover this cavity, make the light of overflowing from this cavity pass this Wavelength changing element and interact, so that produce light emission after the wavelength Conversion with material for transformation of wave length on it.The Wavelength changing element of this rigidity can be smooth, crooked maybe can be moulding so that form thin lens, have predetermined optical transmission pattern.For example, this Wavelength changing element can have such optical transmission pattern, the specific optical transmission pattern of led chip shape of its coupling.
In certain embodiments of the present invention, this submounts comprises the first and second n-type heavily doped regions and p-type heavily doped region, forms zener junctions with described first and second n-types zone.This anode bond pad can contact with n-type zone on electric, and this cathode contact can contact with the 2nd n-type zone simultaneously.Thereby this anode can be connected by the zener diode junctions of a pair of reversal connection with the lead-in wire of negative electrode to this led chip, and the latter can provide the Electrostatic Discharge protection for institute's mounted LEDs chip.In certain embodiments, the first and second n-type heavily doped regions in this submounts inject by n-type dopant or trap diffuses into p-type substrate and makes.The through hole of plating or filling metal can be connected to this trap the opposed surface of the outside connection usefulness of this submounts.
Now, further describe embodiments of the invention with reference at the different embodiment of Fig. 2-7 illustrated.More particularly, at some embodiment of Fig. 2-5 illustrated luminescent device encapsulation and used submounts.
Pass through background, traditional ＂ Zhu Ding (glob top) ＂ white light soild state transmitter (that is, material for transformation of wave length is as the device of epoxy resin dropping at the led chip top of conventional mounting) in, the size of the white image that this packaging produced is by the optical cavities definition of the encapsulation reflector that limits this transducer.Some embodiment of the present invention allows this white converter is placed on more place near chip, so may reduce its image size.Make this become possibility by the through hole electrode connector that is connected to external electrode pads, can eliminate the necessity of wire bond pad in traditional wire bond and this optical cavities.In addition, this white converter can form on chip level, and this can provide white light emitter encapsulation flexibly, can use on different package platforms.
Compare with existing coated white chip solution, some embodiment of the present invention can allow to use the prefabricated advantage that white converter provided, white converter can be screened in advance, to guarantee that they provided correct color dot before relative higher led chip combination with cost.Prefabricated wavelength conversion member is all right, for example, mates with specific the luminescent device output (such as by testing the definite frequency of specific luminescent device etc. in advance) and the requirement output of this encapsulated electroluminescent device.The result can draw such Chip Packaging, and it can provide reproducible and controlled white light or the emission of other light with the rate of finished products of lower cost and improvement.
Refer now to the cross section view of Fig. 2, describe the light emitting semiconductor device encapsulation that comprises according to the submounts of some embodiment of the present invention.As shown in Figure 2, encapsulation 10 is provided with for light-emitting diode (LED) chip 12 is installed.In the illustrational embodiment of Fig. 2, encapsulation 10 comprises semiconductor submount/substrate 14, has a cavity 16 on it, is configured to admit a luminescent device, such as led chip 12.This cavity 16 can comprise base plate 18 and sidewall 20.Sidewall 20 can be an angle at least about 90 degree with respect to this base plate.This cavity 16 can also have and equals one at least, for example, and slightly greater than this led chip 12 or other the height (degree of depth) of 14 end face from base plate 18 to Semiconductor substrate of height of luminescent device that will install on it.
For the illustrational embodiment of Fig. 2, encapsulation 10 also comprises anode bond pad 22A and cathode pad 22B, is positioned on the base plate 18 of cavity 16, in order to be attached to this LED 12 or wherein on the anode and cathode contact node of other luminescent device.According to some embodiment of the present invention, utilize pad 22A, 22B can make the mixed type submounts by wire bond, and this can reduce the package dimension of this chip.
In certain embodiments, semiconductor submount/substrate 14 is a silicon.Cavity 16 can form by etching or other suitable means in the silicon submounts.The silicon processing method, the photoetching process that comprises silicon wafer garden sheet is used for producing diffusion and the injection such as cavity 16 depressions such as grade, dopant, the formation of zener diode junctions and the wherein formation of conductive through hole, all be known in semiconductor technology, here be not described further, only describe here with regard to the special aspect of the present invention.Although here the description of embodiment is usually all carried out with reference to silicon, other semi-conducting material can be used as submount/substrate 14.
In certain embodiments of the present invention, conductive path comprises that through hole connects 24A, 24B and doped region 34A, 34B passes these submount/substrate 14 expansions or enters wherein, and electric going up is connected to outside separately install pad 26A, 26B to anode 24A and negative electrode 24B pad.The outside pad 26A that installs, 26B can be mounted in the one or more wall portion of outer surface 28 of 28 submount/substrate 14.This electrical via can be passed through to inject, spread and/or form by plating or similar method as metal throuth hole.Metal throuth hole can have the attendant advantages of minimizing to the heat dissipation resistance of printed circuit board (PCB) or radiator assembly parts.In certain embodiments of the present invention, the outside pad 26A that installs, 26B forms on the outer surface 28 of submount/substrate 14.Pad 26A is installed in this outside, and 26B can for example, form by plating or other method on the outer surface of this submounts.
The base plate 18 of this cavity 16 and sidewall 20 surfaces can scribble reflecting material, such as silver, increase the reflectivity of cavity 16.Optically transparent sealant 30 can surround and/or protect the luminescent device of being installed, such as the led chip 12 in this cavity 16.In certain embodiments of the present invention, in order to reduce the reflection of this chip/encapsulant boundary, improving light extraction, sealing agent 30 can have about 1.5 or bigger refractive index.
In certain embodiments of the present invention, Wavelength changing element 32 is solid article.Specifically, in such embodiments, Wavelength changing element 32,32 ', 32 ＂ can be a rigidity, semirigid or the flexible solid part.Illustrational as Fig. 3 A and 3B, Wavelength changing element 32,32 ', 32 ＂ can have the shape 32 of a smooth cross section 32 or a bending ', can moulding, form a thin lens with predetermined optical transmission pattern 32 ＂.For example, this Wavelength changing element can have one with the optical transmission pattern of specific led chip shape coupling, or moulding must form the optical transmission pattern of a predetermined near field or far-field optics pattern.This Wavelength changing element can be flat 32 (Fig. 3 A), crooked 32 ' (Fig. 3 A) and/or protruding 32 ＂ (Fig. 3 B) and/or recessed at its upper surface opposite with this luminescent device 12 and/or lower surface.This Wavelength changing element can also comprise can deposit or not so embed the phosphorus film of sealing agent.
In certain embodiments of the present invention, Wavelength changing element 32 can be prefabricated, separates with this submounts, for example, utilizes low-cost big area manufacturing technology, such as silk screen printing, ink jet printing and/or evenly mold pressing and cutting.In addition, Wavelength changing element 32 can be positioned before the submount/substrate 14, and single or full wafer carries out mold pressing and test, so that improve photoemissive uniformity.Prefabricated and/or the test of Wavelength changing element 32 may be provided in the advantage of product rate or the like, particularly makes the Wavelength changing element that comprises multiple phosphorus.
Get back to Fig. 2 again, in certain embodiments of the present invention, submount/substrate 14 can comprise the first and second n-type heavily doped region 34A, 34B.P-type heavily doped region 36 can with first and second n- types zones 34A, 34B forms schematically illustrational zener junctions 35A, 35B.The manufacture method that depends on it, this knot can level or vertical formation.Anode connects the 22A pad and can contact with n-type zone 34A on electric, and cathode pad 22B can contact with the 2nd n-type zone 34B on electric simultaneously.Thereby, luminescent device 12 in this cavity 16 anode and cathode lead nodes can link together by the zener diode junctions of a pair of reversal connection (schematically being shown in Fig. 2) provide electrostatic discharge protective to luminescent device/led chip 12 of being installed.As further expression of Fig. 2, encapsulation 10 can pass through, and for example, traditional method is installed on the substrate 31.Substrate 31 can be, for example, printed circuit board (PCB) or metal-core printed circuit board, this can provide the heat of improvement to dissipate.
Now other embodiment of the present invention are described with reference to Fig. 4.Illustrational as Fig. 4, the first and second n-type heavily doped region 34A in encapsulation 100 the submount/ substrate 14,34B can, for example, make by the injection of n-type dopant or trap are diffused into p-type substrate.The through hole 38A of plating, 38B can be connected to this submount/substrate 14 opposite surfaces to this trap, leads to outside first and second conductive paths that connect submount/substrate 14 outer surfaces of usefulness so that finish.This can also reduce the thermal resistance between LED and the heat dissipation element (radiator, metal-cored PCB etc.).
Now other embodiment of the present invention are described with reference to Fig. 5.Embodiments of the invention illustrated as shown in Figure 5, encapsulation 200 can comprise the substrate 214 on plane, and light funnel 220 is installed thereon.Light funnel 220 can be the solid-state material or the transparent material of a reflection, its refractive index makes that less than the refractive index of locating the sealant 16 on it light that is incident on the light funnel 220 can be by the Wavelength changing element 32 of internal reflection guide-localization on the cavity 16 that is defined by this light funnel 220.
Embodiments of the invention may be suitable for providing, for example, and heavy shade and/or white light LEDs encapsulation.Specifically, some embodiment of the present invention can be used for carrying out the chip on board assembling, it utilizes package dimension little white light emission encapsulation and other white light application, (for example, the entering waveguide or small pixel display in order to connection) that wherein desirable emitter dimensions is little.As above-described, some embodiment of the present invention can provide the encapsulation of a kind of light emitting semiconductor device in the cavity of submounts, have a solid-state wavelength conversion member that is positioned on this submounts above luminescent device, in order to receive from the light of this device emission and to carry out wavelength Conversion.
Although reference comprises that the embodiment of the zener diode junctions that is formed by the n-type doped region in the p-type doped substrate is described above the present invention, but should be understood that, in other embodiments of the invention, p-type doped region can be arranged in the n-type doped substrate.Other embodiment of the present invention needn't comprise zener diode junctions in this substrate, and the electrical connection of external circuit can provide by other means, such as providing by the conductive through hole that passes this substrate 14.
Now further describe the specific embodiment of utilizing Semiconductor substrate to form the method for the submounts that light emitting semiconductor device uses with reference to Fig. 6 flow chart.As shown in Figure 6, operate in square frame 600 beginnings,, be configured to admit luminescent device by in Semiconductor substrate, forming a cavity.This cavity can have base plate and sidewall, becomes one at least 90 ° angle with this base plate.In this substrate, form first and second conductive paths, extend to the outer surface (square frame 610) of this substrate from this cavity.An end of first conductive path forms first connection pads in this cavity, and the end at second conductive path forms second connection pads (square frame 620) in this cavity.
Additional operation can be finished according to certain embodiments of the present invention, as what now further describe with reference to Fig. 6.On an outer surface of this substrate, can form external connection pads (square frame 630) at the two ends of conductive path separately.In addition, on an end face of this Semiconductor substrate, can form groove, be configured to admit the wavelength conversion member (square frame 640) of a rigidity.In certain embodiments of the present invention, the inner surface of this cavity comprises that the base plate of this cavity and sidewall are coated with reflecting material (square frame 650).
Now form the method for luminescent device encapsulation according to some embodiment of the present invention with reference to the flow chart description of Fig. 7.As shown in Figure 7, operating in square frame 700 begins by submounts is provided.For example, this submounts can be a Semiconductor substrate, as for example top described with reference to Fig. 6.Luminescent device is positioned in the cavity of this submount/substrate (square frame 710).The first node of this luminescent device can be located to such an extent that contact with first pad that forms in this cavity, and the Section Point of this luminescent device can contact with second pad that forms in this substrate cavity.
In specific embodiment, test solid-state wavelength conversion member in advance, so that determine its wavelength conversion characteristics (square frame 720) according to method of the present invention.This wavelength conversion member is attached to before the luminescent device encapsulation, and by testing the wavelength characteristic of this wavelength conversion member, such test can provide formed luminescent device encapsulation high rate of finished products.After the test, solid-state wavelength conversion member be positioned at this luminescent device on this substrate above so that receive from this luminescent device emission light and carry out wavelength Conversion (square frame 730).This wavelength conversion member, as illustrational at Fig. 3 A, be installed in this cavity in the upper surface of the opposite wavelength conversion member of luminescent device on can have smooth and/or recessed shape.
The schematic diagram of Fig. 6 and 7 flow chart and Fig. 2 to 5 illustrates the operation according to the method for the function of the submounts of some embodiment of the present invention and/or luminescent device encapsulation and their usefulness of formation in the cards.Be noted that in the realization that some substitutes the order that writes down occurs in action that these accompanying drawings are described may be not according to these accompanying drawings.For example, Biao Shi two frame/operations in fact can be carried out basically simultaneously in succession, or can carry out with opposite order, depend on related function.
As what point out above, led chip is installed in the groove cavities of semiconductor substrate chip carrier/submount and can provides a little optical imagery size that is not more than led chip itself basically for the white light emission chip.This groove cavities can play optical cavities and concentrator.Institute's mounted LEDs chip can also provide white converter element prefabricated or that form on the spot is placed near above this led chip.Placement can provide the white light emitter of identical with this a led chip basically image size like this.The function that depends on requirement, this submounts can be to be integrated in the encapsulation of traditional electronics.This submounts can also be to seal itself, and it can improve the stability of its machinery, so that the encapsulation of an individual chips size is provided.
Above-mentioned is exemplary to the present invention, thereby should not be construed as its restriction.Although described several exemplary embodiment of the present invention, the professional and technical personnel is not difficult to recognize, teaches under the situation with advantage not breaking away from novel of the present invention, and many modifications all are possible in these exemplary embodiments.Correspondingly, all such modifications all should be considered as being included within the defined scope of the present invention of claims.Therefore, understand that above-mentioned is exemplary to the present invention, thereby should not be construed as and be limited to disclosed specific embodiment, and the modification and other the embodiment of the disclosed embodiments all intended being included in the scope of accompanying Claim book.The present invention is by the equivalent definition of following claims together with the appended claim book.
Claims (26)
1. submounts that light emitting semiconductor device is used comprises:
Semiconductor substrate has cavity on it, be configured to admit this luminescent device;
First connection pads in this cavity is located to such an extent that the first node that is received in the luminescent device in this cavity is connected to passes first conductive path that this substrate extends to the outer surface of this Semiconductor substrate; With
Second connection pads in this cavity, locate to such an extent that the Section Point of this luminescent device is connected to passes second conductive path that this substrate extends to the outer surface of this substrate, wherein, this first conductive path comprises that with this second conductive path the through hole that links to each other continuously is connected and doped region, this substrate comprises first kind dopant, and this first and second conductive path doped region separately includes second type dopant, this second type dopant is different from this first kind dopant, and this first and second conductive path through hole separately connects and doped region all extends to the outer surface of this substrate continuously from connection pads separately.
2. the submounts of claim 1 is characterized in that, this cavity comprises base plate and sidewall, is at least 90 ° with respect to the angle of this base plate.
3. the submounts of claim 2 is characterized in that, this first and second connection pads is positioned on the base plate of this cavity.
4. the submounts of claim 2 is characterized in that, this cavity has a height from this base plate to this Semiconductor substrate end face that equals to admit the height of luminescent device wherein at least.
5. the submounts of claim 2, it is characterized in that, also comprise the admittance groove of contiguous this cavity in the end face of this Semiconductor substrate, be configured to admit solid-state Wavelength changing element, and this Wavelength changing element be positioned at this cavity above, so that the light that reception is launched from the luminescent device in this cavity, wherein said solid-state Wavelength changing element comprises the rigidity wavelength conversion member of the glass, silicon and/or the hardening epoxy resin that include material for transformation of wave length.
6. the submounts of claim 2 is characterized in that, also comprises the base plate of this cavity and/or the reflective material coatings on the sidewall.
7. the submounts of claim 1 is characterized in that, this first and second conductive path all extends to the downside of the outer surface of this Semiconductor substrate.
8. the submounts of claim 1 is characterized in that, also comprises:
The first outside pad and the second outside pad of installing installed on the outer surface of this Semiconductor substrate, wherein this first conductive path extends to this first outside pad is installed, and this second conductive path extends to this second outside pad of installing.
9. the submounts of claim 1 is characterized in that, also comprises the zener diode junctions of integrated reversal connection, connects this first and second conductive path, so that provide the Electrostatic Discharge protection for being installed in luminescent device in this cavity.
10. the submounts of claim 9, it is characterized in that, the zener diode junctions of this reversal connection comprises the first conductivity type doped region of semi-conducting material of at least a portion of at least a portion of forming this first conductive path and this second conductive path, and the doped region that is positioned at the opposite conductivity type of the semi-conducting material between them.
11. the submounts of claim 10 is characterized in that, this first conductivity type comprises the n-type, and opposite conductivity type comprises the p-type.
12. the submounts of claim 11 is characterized in that, separately one that this n-type doped region and this first and second connection pads or this first and second be outside installs pad contacts.
13. the submounts of claim 12 is characterized in that, this Semiconductor substrate comprises p-type substrate, and wherein this n-type doped region comprises n-type dopant well in this p-type substrate.
14. the submounts of claim 10, it is characterized in that, this first and second conductive path also comprises filling hole with metal part separately, the first conductivity type doped region of making from semi-conducting material separately extend in this cavity separately connection pads or the outer surface of this substrate.
15. a luminescent device encapsulates, and comprises the submounts of claim 11, it is characterized in that, also comprises:
This luminescent device in this cavity; With
Solid-state wavelength conversion member, be positioned at this luminescent device on the end face of this Semiconductor substrate above, in order to receive from the light of this luminescent device emission and to carry out wavelength Conversion.
16. the encapsulation of claim 15 is characterized in that, also comprises the sealant material between inherent this luminescent device of this cavity and this wavelength conversion member.
17. the encapsulation of claim 16 is characterized in that, the sealing agent material has at least 1.5 refractive index.
18. the encapsulation of claim 15 is characterized in that, this solid-state wavelength conversion member comprises the rigidity wavelength conversion member of glass, silicon and/or hardening epoxy resin, wherein has material for transformation of wave length.
19. the encapsulation of claim 18 is characterized in that, this material for transformation of wave length comprises phosphorus.
20. the encapsulation of claim 15 is characterized in that, this luminescent device comprises light-emitting diode (LED).
21. a method that forms the submounts that light emitting semiconductor device uses comprises:
Form a cavity in a Semiconductor substrate, be configured to admit luminescent device, this cavity has base plate and sidewall, is at least 90 ° with respect to the angle of this base plate;
Form first conductive path, it passes this substrate extends to this substrate from this cavity outer surface;
Form second conductive path, it passes this substrate extends to this substrate from this cavity outer surface;
One end of first conductive path that forms therein in this cavity forms first connection pads;
One end of second conductive path that forms therein in this cavity forms second connection pads.
22. the method for claim 21 is characterized in that, also comprises the zener diode junctions that forms integrated reversal connection, connects this first and second conductive path, so that provide the Electrostatic Discharge protection for being positioned at luminescent device in this cavity.
23. the method for claim 22, it is characterized in that, this Semiconductor substrate comprises the first conductivity type doped region of semi-conducting material, and wherein the zener diode junctions of the integrated reversal connection of Xing Chenging is included in the doped region of the first conductivity type doped region as the opposite conductivity type of the semi-conducting material of the part formation of this first conductive path; The second opposite conductivity type doped region with the semi-conducting material that forms as the part of this second conductive path at this first conductivity type doped region.
24. one kind forms the method that luminescent device encapsulates, and comprises the method for claim 23, it is characterized in that, also comprises:
This luminescent device is positioned in this cavity, makes the first node of this luminescent device be connected to this first connection pads and the Section Point of this luminescent device is connected to this second connection pads; With
Solid-state wavelength conversion member be positioned at this luminescent device on this substrate above so that receive from the light of this luminescent device emission and carry out wavelength Conversion.
25. the method for claim 24 is characterized in that, be positioned at solid-state wavelength conversion member on this submounts before, test this solid-state wavelength conversion member, to determine its wavelength conversion characteristics.
26. the method for claim 25 is characterized in that, the surface facing to this luminescent device of this wavelength conversion member is flat and/or recessed.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52805403P | 2003-12-09 | 2003-12-09 | |
| US60/528,054 | 2003-12-09 | ||
| US10/987,894 | 2004-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1930695A CN1930695A (en) | 2007-03-14 |
| CN100474640C true CN100474640C (en) | 2009-04-01 |
Family
ID=37859599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800362543A Active CN100474640C (en) | 2003-12-09 | 2004-11-24 | Semiconductor light emitting devices and sub-support and methods for forming the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100474640C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7988311B2 (en) * | 2008-06-30 | 2011-08-02 | Bridgelux, Inc. | Light emitting device having a phosphor layer |
| US8410681B2 (en) | 2008-06-30 | 2013-04-02 | Bridgelux, Inc. | Light emitting device having a refractory phosphor layer |
| TW201201409A (en) * | 2010-06-29 | 2012-01-01 | Semileds Optoelectronics Co | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
| CN102386318A (en) * | 2010-09-03 | 2012-03-21 | 台达电子工业股份有限公司 | Packaging structure and packaging method of light-emitting diode |
| CN103782400A (en) * | 2011-07-25 | 2014-05-07 | 克里公司 | Monolithic multi-junction light emitting devices including multiple groups of light emitting diodes |
| WO2020133381A1 (en) * | 2018-12-29 | 2020-07-02 | 泉州三安半导体科技有限公司 | Laser package structure |
-
2004
- 2004-11-24 CN CNB2004800362543A patent/CN100474640C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN1930695A (en) | 2007-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1692729B1 (en) | Submount for a semiconductor light emitting device and manufacturing method thereof | |
| CN102163681B (en) | Light emitting apparatus, method of manufacturing the same, and lighting system | |
| KR101143207B1 (en) | Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same | |
| US20130309789A1 (en) | Batwing LED with Remote Phosphor Configuration | |
| US9893247B2 (en) | Light-emitting device including phosphorus layer covering side surfaces of substrate and light-emitting device package including the same | |
| KR20040075738A (en) | Light emitting apparatus | |
| TWI778103B (en) | Light emitting device package | |
| EP2953175B1 (en) | Light emitting device module | |
| US10490703B2 (en) | Light-emitting-device package and production method therefor | |
| CN104396035A (en) | Phosphor separated from LED by transparent spacer | |
| CN109390449A (en) | Light emitting device package | |
| JP2001177157A (en) | Semiconductor light emitting device | |
| CN100474640C (en) | Semiconductor light emitting devices and sub-support and methods for forming the same | |
| CN102044618B (en) | Light emitting device package and lighting system | |
| CN101849295B (en) | Method for manufacturing semiconductor luminescent device | |
| JP6978708B2 (en) | Semiconductor light emitting device | |
| KR100628884B1 (en) | White Light Emitting and its method of making | |
| KR20130051095A (en) | Lead frame, manufacturing method the same and light emitting diode using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211126 Address after: California, USA Patentee after: Kerui led Co. Address before: North Carolina Patentee before: CREE, Inc. |