EP2759001A4 - Led chip and method for manufacturing the same - Google Patents

Led chip and method for manufacturing the same

Info

Publication number
EP2759001A4
EP2759001A4 EP12833315.0A EP12833315A EP2759001A4 EP 2759001 A4 EP2759001 A4 EP 2759001A4 EP 12833315 A EP12833315 A EP 12833315A EP 2759001 A4 EP2759001 A4 EP 2759001A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
led chip
led
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12833315.0A
Other languages
German (de)
French (fr)
Other versions
EP2759001A1 (en
Inventor
Ge Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Original Assignee
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd, Shenzhen BYD Auto R&D Co Ltd filed Critical BYD Co Ltd
Publication of EP2759001A1 publication Critical patent/EP2759001A1/en
Publication of EP2759001A4 publication Critical patent/EP2759001A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
EP12833315.0A 2011-09-22 2012-08-22 Led chip and method for manufacturing the same Withdrawn EP2759001A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110282701.5A CN103022274B (en) 2011-09-22 2011-09-22 A kind of LED chip and manufacture method thereof
PCT/CN2012/080472 WO2013040974A1 (en) 2011-09-22 2012-08-22 Led chip and method for manufacturing the same

Publications (2)

Publication Number Publication Date
EP2759001A1 EP2759001A1 (en) 2014-07-30
EP2759001A4 true EP2759001A4 (en) 2015-04-29

Family

ID=47913864

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12833315.0A Withdrawn EP2759001A4 (en) 2011-09-22 2012-08-22 Led chip and method for manufacturing the same

Country Status (3)

Country Link
EP (1) EP2759001A4 (en)
CN (1) CN103022274B (en)
WO (1) WO2013040974A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201614870A (en) * 2014-10-08 2016-04-16 Toshiba Kk Semiconductor light emitting device and method for manufacturing the same
CN112670379A (en) * 2020-12-24 2021-04-16 广东省科学院半导体研究所 Micro LED structure and color display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197361A1 (en) * 2002-10-30 2009-08-06 Bert Braune Method for Producing an LED Light Source Comprising a Luminescence Conversion Element
US20100181591A1 (en) * 2007-06-29 2010-07-22 Abel Systems Incorporation Led illumination device using diffraction member
US20100291313A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface
KR101011757B1 (en) * 2010-04-09 2011-02-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822482B2 (en) * 2001-05-23 2011-11-24 シチズン電子株式会社 Light emitting diode and manufacturing method thereof
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
KR20090002835A (en) * 2007-07-04 2009-01-09 엘지전자 주식회사 Nitride light emitting device and method of making the same
TWI367577B (en) * 2007-10-05 2012-07-01 Delta Electronics Inc Light-emitting diode chip and manufacturing method thereof
CN101599519A (en) * 2008-06-04 2009-12-09 国立勤益科技大学 Emitting uniform light emitting diode construction and manufacture method thereof
TWI492422B (en) * 2010-03-18 2015-07-11 Everlight Electronics Co Ltd Fabrication method of light emitting diode chip having phosphor coating layer
CN101853911A (en) * 2010-03-31 2010-10-06 晶能光电（江西）有限公司 Light-emitting diode (LED) structure for improving light-extraction efficiency and manufacturing method
CN102130250A (en) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 Light emitting diode (LED) and manufacturing method thereof
CN102130227B (en) * 2010-12-22 2012-06-20 哈尔滨工业大学 Encapsulation process for white light LED with optical lens

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197361A1 (en) * 2002-10-30 2009-08-06 Bert Braune Method for Producing an LED Light Source Comprising a Luminescence Conversion Element
US20100181591A1 (en) * 2007-06-29 2010-07-22 Abel Systems Incorporation Led illumination device using diffraction member
US20100291313A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface
KR101011757B1 (en) * 2010-04-09 2011-02-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
EP2375457A2 (en) * 2010-04-09 2011-10-12 LG Innotek Co., Ltd. Light emitting device with a monolithic re-emission layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013040974A1 *

Also Published As

Publication number Publication date
CN103022274B (en) 2016-04-13
WO2013040974A1 (en) 2013-03-28
CN103022274A (en) 2013-04-03
EP2759001A1 (en) 2014-07-30

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20140108

AK Designated contracting states

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DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20150327

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/38 20100101ALN20150323BHEP

Ipc: H01L 33/20 20100101ALI20150323BHEP

Ipc: H01L 33/50 20100101AFI20150323BHEP

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Effective date: 20151027