EP2759001A4 - Puce de diode électroluminescente et son procédé de fabrication - Google Patents

Puce de diode électroluminescente et son procédé de fabrication

Info

Publication number
EP2759001A4
EP2759001A4 EP12833315.0A EP12833315A EP2759001A4 EP 2759001 A4 EP2759001 A4 EP 2759001A4 EP 12833315 A EP12833315 A EP 12833315A EP 2759001 A4 EP2759001 A4 EP 2759001A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
led chip
led
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12833315.0A
Other languages
German (de)
English (en)
Other versions
EP2759001A1 (fr
Inventor
Ge Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Original Assignee
BYD Co Ltd
Shenzhen BYD Auto R&D Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd, Shenzhen BYD Auto R&D Co Ltd filed Critical BYD Co Ltd
Publication of EP2759001A1 publication Critical patent/EP2759001A1/fr
Publication of EP2759001A4 publication Critical patent/EP2759001A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
EP12833315.0A 2011-09-22 2012-08-22 Puce de diode électroluminescente et son procédé de fabrication Withdrawn EP2759001A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110282701.5A CN103022274B (zh) 2011-09-22 2011-09-22 一种led芯片及其制造方法
PCT/CN2012/080472 WO2013040974A1 (fr) 2011-09-22 2012-08-22 Puce de diode électroluminescente et son procédé de fabrication

Publications (2)

Publication Number Publication Date
EP2759001A1 EP2759001A1 (fr) 2014-07-30
EP2759001A4 true EP2759001A4 (fr) 2015-04-29

Family

ID=47913864

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12833315.0A Withdrawn EP2759001A4 (fr) 2011-09-22 2012-08-22 Puce de diode électroluminescente et son procédé de fabrication

Country Status (3)

Country Link
EP (1) EP2759001A4 (fr)
CN (1) CN103022274B (fr)
WO (1) WO2013040974A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201614870A (en) * 2014-10-08 2016-04-16 Toshiba Kk Semiconductor light emitting device and method for manufacturing the same
CN112670379A (zh) * 2020-12-24 2021-04-16 广东省科学院半导体研究所 微led结构和彩色显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197361A1 (en) * 2002-10-30 2009-08-06 Bert Braune Method for Producing an LED Light Source Comprising a Luminescence Conversion Element
US20100181591A1 (en) * 2007-06-29 2010-07-22 Abel Systems Incorporation Led illumination device using diffraction member
US20100291313A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface
KR101011757B1 (ko) * 2010-04-09 2011-02-07 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822482B2 (ja) * 2001-05-23 2011-11-24 シチズン電子株式会社 発光ダイオードおよびその製造方法
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
KR20090002835A (ko) * 2007-07-04 2009-01-09 엘지전자 주식회사 질화물계 발광 소자 및 그 제조방법
TWI367577B (en) * 2007-10-05 2012-07-01 Delta Electronics Inc Light-emitting diode chip and manufacturing method thereof
CN101599519A (zh) * 2008-06-04 2009-12-09 国立勤益科技大学 出光均匀的发光二极管结构及其制造方法
TWI492422B (zh) * 2010-03-18 2015-07-11 Everlight Electronics Co Ltd 具有螢光粉層之發光二極體晶片的製作方法
CN101853911A (zh) * 2010-03-31 2010-10-06 晶能光电（江西）有限公司 改善出光率的发光二极管结构以及制造方法
CN102130250A (zh) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
CN102130227B (zh) * 2010-12-22 2012-06-20 哈尔滨工业大学 光学透镜的白光led的封装工艺

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197361A1 (en) * 2002-10-30 2009-08-06 Bert Braune Method for Producing an LED Light Source Comprising a Luminescence Conversion Element
US20100181591A1 (en) * 2007-06-29 2010-07-22 Abel Systems Incorporation Led illumination device using diffraction member
US20100291313A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface
KR101011757B1 (ko) * 2010-04-09 2011-02-07 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
EP2375457A2 (fr) * 2010-04-09 2011-10-12 LG Innotek Co., Ltd. Dispositif électroluminescent avec une couche monolithique de réémission

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013040974A1 *

Also Published As

Publication number Publication date
CN103022274B (zh) 2016-04-13
EP2759001A1 (fr) 2014-07-30
CN103022274A (zh) 2013-04-03
WO2013040974A1 (fr) 2013-03-28

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20140108

AK Designated contracting states

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Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20150327

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/38 20100101ALN20150323BHEP

Ipc: H01L 33/20 20100101ALI20150323BHEP

Ipc: H01L 33/50 20100101AFI20150323BHEP

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 20151027