KR20170030125A - Semiconductor Light Emitting Device And Method of Manufacturing the same - Google Patents

Semiconductor Light Emitting Device And Method of Manufacturing the same Download PDF

Info

Publication number
KR20170030125A
KR20170030125A KR1020150126979A KR20150126979A KR20170030125A KR 20170030125 A KR20170030125 A KR 20170030125A KR 1020150126979 A KR1020150126979 A KR 1020150126979A KR 20150126979 A KR20150126979 A KR 20150126979A KR 20170030125 A KR20170030125 A KR 20170030125A
Authority
KR
South Korea
Prior art keywords
emitting device
light emitting
semiconductor light
wavelength conversion
conversion layer
Prior art date
Application number
KR1020150126979A
Other languages
Korean (ko)
Inventor
박은현
전수근
김경민
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to KR1020150126979A priority Critical patent/KR20170030125A/en
Publication of KR20170030125A publication Critical patent/KR20170030125A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a semiconductor light emitting device chip including an electrode; A wavelength conversion layer formed on the semiconductor light emitting device chip; And a reflective layer that reflects light emitted from a side surface of the wavelength conversion layer and the semiconductor light emitting device chip, and the electrode is exposed so as to be electrically connected to the outside.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device with improved light extraction efficiency and a method of manufacturing the same.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity are sequentially deposited A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed thereon and an electrode 70 serving as a bonding pad is formed on the exposed first semiconductor layer 30 80: e.g., a Cr / Ni / Au laminated metal pad). The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the substrate 10 side is electrically connected to the outside, it functions as a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in Korean Patent Laid-Open Publication No. 10-2015-0073521. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip comprises a substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, A second semiconductor layer 50 having a second conductivity is sequentially deposited on the substrate 10 and three layered electrode films 90, 91 and 92 for reflecting light toward the substrate 10 are formed. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it functions as a mounting surface. The semiconductor light emitting device of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Where the height reference may be the height from the substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160. [ The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have.

In recent years, the size of the semiconductor light emitting device tends to be miniaturized. Accordingly, a chip size package (CSP) has been developed more actively than a semiconductor light emitting device having the shape shown in FIG. The present disclosure seeks to provide a semiconductor light emitting device having a small chip size and an improved light extraction efficiency.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a semiconductor light emitting device chip including an electrode; A wavelength conversion layer formed on the semiconductor light emitting device chip; The semiconductor light emitting device may further include a reflective layer that reflects light emitted from the side of the wavelength conversion layer and the semiconductor light emitting device chip, and the electrode is exposed to be electrically connected to the outside.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: forming a wavelength conversion layer (S1) using a wavelength conversion layer forming material; Arranging the semiconductor light emitting device chip on the wavelength conversion layer (S2); Forming a groove in the wavelength conversion layer (S3); And forming a reflective layer (S4) so as to surround the side surface of the semiconductor light emitting device chip and fill the groove formed in the wavelength conversion layer (S4).

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in Korean Patent Laid-Open No. 10-2015-0073521,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing an example of a case where the wavelength converting layer forming material is a film,
FIG. 6 is a plan view of the semiconductor light emitting device shown in FIG. 4,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
11 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 200 according to the present disclosure includes a semiconductor light emitting device chip 210, a wavelength conversion layer 220 formed on the semiconductor light emitting device chip 210, a semiconductor light emitting device chip 210, and a wavelength conversion layer 220 And a reflective layer 230 for reflecting light emitted from the side of the reflective layer 230.

The semiconductor light emitting device chip 210 may be one of a lateral chip, a vertical chip, and a flip chip. A flip chip is preferred. The semiconductor light emitting device chip 210 includes an electrode 211. It is preferable that at least one electrode 211 is exposed so as to be electrically connected to the outside. The wavelength conversion layer 220 is formed by a wavelength converting layer forming material. The wavelength converting layer forming material includes a wavelength converting material 221 and a resin 222. The wavelength converting material 221 may be any material as long as it converts light generated from the active layer of the semiconductor light emitting device chip 210 into light of a different wavelength (for example, pigment, dye, etc.) For example, YAG, (Sr, Ba, Ca) 2 SiO 4 : Eu, etc.) is preferably used. As the resin 222, an epoxy resin, a silicone resin, or the like can be used. Further, the wavelength converting layer forming material may further contain a light scattering material and the like. The wavelength conversion layer 220 may be formed using a liquid wavelength conversion layer forming material, but may be a material that has been previously cured such as a film. When the wavelength conversion layer 220 is formed of a film, it may include a separate adhesive layer 223 for bonding with another object (for example, a semiconductor light emitting device chip) (see FIG. 5). However, the adhesive layer 223 is not shown in the semiconductor light emitting device 200 according to the present disclosure. 10, grooves are formed in the wavelength conversion layer 220. In order to prevent damage to the semiconductor light emitting device chip 210, the planar portion of the wavelength conversion layer 220 is formed in the semiconductor light emitting device chip 210) (see Fig. 6). The reflective layer 230 is positioned to reflect light emitted from the side of the semiconductor light emitting device chip 210 and the wavelength conversion layer 220. The light emitted from the side surfaces of the semiconductor light emitting device chip 210 and the wavelength conversion layer 220 is reflected to reduce the angle of light traveling upward of the semiconductor light emitting device 200, have. The material of the reflective layer 230 is preferably a white reflective resin that does not transmit light. For example, white silicon is preferred.

5 is a view showing an example of a case where the wavelength converting layer forming material is a film.

When the wavelength converting layer forming material is a film, since the resin 222 is already cured, it can not be attached to other objects such as the semiconductor light emitting device chip 210. Therefore, it may include a separate adhesive layer 223 for attaching to another object to form a wavelength conversion layer.

6 is a plan view of the semiconductor light emitting device shown in FIG.

The planar area of the wavelength conversion layer 220 may be larger than the planar area of the semiconductor light emitting device chip 210, as described with reference to FIG. 6 (a), the reflective layer 230 surrounds all the side surfaces of the wavelength conversion layer 220, but the semiconductor light emitting device 200 is surrounded by only the side surfaces of the wavelength conversion layer 220 as shown in FIG. 6 (b) The angle of the light going upward from the light source can be adjusted.

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The disclosed semiconductor light emitting device 300 is the same as the semiconductor light emitting device 200 disclosed in FIG. 4, except that the reflective layer 330 surrounds the entire side surface of the wavelength conversion layer 320. There is no difference in height between the upper surface 331 of the reflective layer 330 and the upper surface 321 of the wavelength conversion layer 320. The reflective layer 330 surrounds the entire side surface of the wavelength conversion layer 320 to completely block the light going to the side surface of the wavelength conversion layer 320 and to increase the light extraction efficiency.

8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

The disclosed semiconductor light emitting device 400 includes the semiconductor light emitting device 300 disclosed in FIG. 5, except that a transparent layer 440 is provided between the reflective layer 430 and the wavelength conversion layer 420 and the semiconductor light emitting device chip 410. . The transparent layer 440 may be made of one of epoxy resin and silicone resin. In particular, when the wavelength conversion layer forming material forming the wavelength conversion layer 420 is a film or a liquid, but is cured before the semiconductor light emitting device chip 410 is attached, the semiconductor light emitting device chip 410 is formed on the wavelength conversion layer 420 A transparent layer 440 may be formed for attachment. Although the transparent layer 440 is formed between the reflective layer 430 and the wavelength conversion layer 420 and the semiconductor light emitting device chip 410 in FIG. 8, it may be formed between the reflective layer 430 and the semiconductor light emitting device chip 410, Or between the wavelength conversion layer 420 and the semiconductor light emitting device chip 410.

9 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The disclosed semiconductor light emitting device 500 is the same as the semiconductor light emitting device 300 disclosed in FIG. 5 except that the wavelength conversion layer 520 surrounds a part of the side surface of the semiconductor light emitting device chip 510. More light directly entering the wavelength conversion layer 520 may be transmitted, and more light may be wavelength-converted.

10 is a view showing an example of a method of manufacturing the semiconductor light emitting device according to the present disclosure.

In the method of manufacturing a semiconductor light emitting device according to the present disclosure, a wavelength conversion layer 600 is formed using a wavelength conversion layer forming material (S1). When the wavelength converting layer forming material is a liquid, the wavelength converting layer 600 can be formed by coating the substrate 610 on the substrate 610. Also, although not shown, when the wavelength conversion layer forming material is a film, the adhesive layer may be disposed on the substrate 610 with the adhesive layer facing upward. Then, a plurality of semiconductor light-emitting device chips 620 are arranged on the wavelength conversion layer 600 (S2). At least one electrode 621 is arranged to face the wavelength conversion layer 600, that is, to face upward when arranging the plurality of semiconductor light emitting device chips 620. Then, a groove 630 is formed in the wavelength conversion layer 600 (S3). The groove 630 may be formed through the wavelength conversion layer 600, but may not be penetrated. Thereafter, a reflective layer 640 is formed so as to surround the side surface of the semiconductor light emitting device chip 620 and fill the groove 630 formed in the wavelength conversion layer 600 (S4). When the groove 630 is formed through the wavelength conversion layer 600, the reflective layer 330 surrounds the entire side surface of the wavelength conversion layer 320 as shown in FIG. 7, and the groove 630 surrounds the wavelength conversion layer 600 The reflection layer 230 surrounds a part of the side surface of the wavelength conversion layer 220 as shown in FIG. Thereafter, the semiconductor light emitting device is cut along the cut line 650 to obtain each semiconductor light emitting device (S5). The substrate 610 can be removed before cutting.

11 is a view showing another example of a method of manufacturing the semiconductor light emitting device according to the present disclosure.

11 is a view showing a manufacturing method applied when the wavelength conversion layer 700 is formed of a film. A plurality of semiconductor light emitting device chips 710 are arranged in the wavelength conversion layer 700 and then the wavelength conversion layer 700 is extended in the direction of the arrow 730 so that the interval 720 between the semiconductor light emitting device chips 710 is You can spread it. It is possible to facilitate the formation of grooves in the wavelength conversion layer 700 by widening the interval 720 between the light emitting device chips 710. [ Fig. 11 (a) is a plan view, and Fig. 11 (b) is a sectional view along AA '. It can be clearly seen that the interval 720 between the light emitting device chips 710 is widened through the sectional view.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a semiconductor light emitting device chip including an electrode; A wavelength conversion layer formed on the semiconductor light emitting device chip; And a reflective layer for reflecting light emitted from the side of the wavelength conversion layer and the semiconductor light emitting device chip, and the electrode is exposed to be electrically connected to the outside.

(2) A semiconductor light emitting device wherein the semiconductor light emitting device chip is a flip chip.

(3) The semiconductor light emitting device according to (3), wherein the wavelength conversion layer is made of a wavelength converting layer forming material including a wavelength conversion material.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the wavelength converting layer forming material is a film.

(5) The semiconductor light emitting device according to any one of (1) to (5), wherein the planar area of the wavelength conversion layer is larger than the planar area of the semiconductor light emitting device chip.

(6) The semiconductor light emitting device according to any one of (1) to (6), wherein the reflective layer surrounds the entire side surface of the wavelength conversion layer.

(7) The semiconductor light emitting device according to any one of (1) to (5), wherein there is no height difference between the upper surface of the reflective layer and the upper surface of the wavelength conversion layer.

(8) The semiconductor light emitting device according to (8), wherein the planar area of the wavelength conversion layer is larger than the planar area of the semiconductor light emitting device chip, and the reflective layer surrounds the entire side surfaces of the wavelength conversion layer and the semiconductor light emitting device chip.

(9) A method of manufacturing a semiconductor light emitting device, comprising: forming a wavelength conversion layer using a wavelength conversion layer forming material (S1); Arranging the semiconductor light emitting device chip on the wavelength conversion layer (S2); Forming a groove in the wavelength conversion layer (S3); And forming a reflective layer (S4) so as to surround the side surface of the semiconductor light emitting device chip and fill the groove formed in the wavelength conversion layer (S4).

(10) a step (S2-1) of expanding the film between steps S2 and S3 when the wavelength converting layer forming material is a film.

(11) In the step (S3), the groove is a groove penetrating the wavelength conversion layer.

According to the present disclosure, it is possible to improve the light extraction efficiency of a semiconductor light emitting device of a chip size by reflecting light that is emitted to the side of the wavelength conversion layer.

According to the present disclosure, a semiconductor light emitting device having a chip size that reflects light to the side of the wavelength conversion layer can be easily manufactured.

Semiconductor light emitting devices: 100, 200, 300, 400, 500
Semiconductor light-emitting device chips: 150, 210, 310, 410, 510, 620, 710
Wavelength conversion layer: 220, 320, 420, 520, 600, 700
Reflective layer: 230, 330, 430, 530, 620

Claims (12)

In the semiconductor light emitting device,
A semiconductor light emitting element chip including an electrode;
A wavelength conversion layer formed on the semiconductor light emitting device chip; And,
And a reflective layer that reflects light emitted from the side of the wavelength conversion layer and the semiconductor light emitting device chip,
And the electrode is exposed so as to be electrically connected to the outside. The method according to claim 1,
Wherein the semiconductor light emitting device chip is a flip chip. The method according to claim 1,
Wherein the wavelength conversion layer is made of a wavelength converting layer forming material including a wavelength conversion material. The method of claim 3,
Wherein the wavelength converting layer forming material is a film. The method according to claim 1,
And the planar area of the wavelength conversion layer is larger than the planar area of the semiconductor light-emitting device chip. The method according to claim 1,
And the reflective layer surrounds the entire side surface of the wavelength conversion layer. The method of claim 7,
Wherein no difference in height exists between the upper surface of the reflective layer and the upper surface of the wavelength conversion layer. The method according to claim 1,
Wherein the planar area of the wavelength conversion layer is larger than the planar area of the semiconductor light emitting device chip, and the reflective layer surrounds the entire side surfaces of the wavelength conversion layer and the semiconductor light emitting device chip. A method of manufacturing a semiconductor light emitting device,
Forming a wavelength conversion layer using a wavelength conversion layer forming material (S1);
Arranging a semiconductor light emitting device chip including electrodes on the wavelength conversion layer (S2);
Forming a groove in the wavelength conversion layer (S3); And,
(S4) surrounding the side surface of the semiconductor light emitting device chip, and forming a reflective layer so that the groove formed in the wavelength conversion layer is filled with the semiconductor light emitting device chip. The method of claim 9,
(S2-1) of expanding the film between steps S2 and S3 when the wavelength converting layer forming material is a film. The method of claim 9,
And the groove is a groove passing through the wavelength conversion layer in step S3. The method of claim 9,
And arranging the semiconductor light emitting device chips so that the electrodes face upward in step S2.
KR1020150126979A 2015-09-08 2015-09-08 Semiconductor Light Emitting Device And Method of Manufacturing the same KR20170030125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150126979A KR20170030125A (en) 2015-09-08 2015-09-08 Semiconductor Light Emitting Device And Method of Manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150126979A KR20170030125A (en) 2015-09-08 2015-09-08 Semiconductor Light Emitting Device And Method of Manufacturing the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170050500A Division KR101863538B1 (en) 2017-04-19 2017-04-19 Semiconductor Light Emitting Device And Method of Manufacturing the same

Publications (1)

Publication Number Publication Date
KR20170030125A true KR20170030125A (en) 2017-03-17

Family

ID=58502013

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150126979A KR20170030125A (en) 2015-09-08 2015-09-08 Semiconductor Light Emitting Device And Method of Manufacturing the same

Country Status (1)

Country Link
KR (1) KR20170030125A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072800A (en) * 2023-03-06 2023-05-05 镭昱光电科技(苏州)有限公司 Micro-LED display chip and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072800A (en) * 2023-03-06 2023-05-05 镭昱光电科技(苏州)有限公司 Micro-LED display chip and preparation method thereof

Similar Documents

Publication Publication Date Title
TWI550910B (en) Semiconductor light emitting device
JP6545981B2 (en) Semiconductor light emitting device
TWI543399B (en) Semiconductor light emitting device
KR101291092B1 (en) Method of manufacutruing semiconductor device structure
KR101863538B1 (en) Semiconductor Light Emitting Device And Method of Manufacturing the same
KR20170071670A (en) Substrate for semiconductor light emitting device
KR101733043B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101778141B1 (en) Semiconductor light emitting device and method of manufacturing the same
KR101772550B1 (en) Semiconductor light emitting device
KR20170030125A (en) Semiconductor Light Emitting Device And Method of Manufacturing the same
KR101273481B1 (en) White Light-emitting diode and Method of Manufacturing the same
JP7053249B2 (en) Semiconductor light emitting device
KR101863549B1 (en) Semiconductor light emitting device
KR101779084B1 (en) Semicondutor light emitting device structure and method of manufacturing the same
US20170141272A1 (en) Frame for semiconductor light emitting device
KR101855189B1 (en) Semiconductor light emitting device
KR101300463B1 (en) Method of manufacutruing semiconductor device structure
KR101807531B1 (en) Semicondutor light emitting device and method of manufacturing the same
KR101299563B1 (en) Method of manufacutruing semiconductor device structure
KR20170109167A (en) Semiconductor light emitting device
KR101824589B1 (en) Semiconductor light emitting device structure
KR101863546B1 (en) Semiconductor light emitting device
KR20170042454A (en) Semiconductor light emitting device
KR20170058486A (en) Semiconductor light emitting device
KR101806789B1 (en) Semiconductor light emitting device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
A107 Divisional application of patent
WITB Written withdrawal of application