CN116072800A - Micro-LED display chip and preparation method thereof - Google Patents

Micro-LED display chip and preparation method thereof Download PDF

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Publication number
CN116072800A
CN116072800A CN202310205054.0A CN202310205054A CN116072800A CN 116072800 A CN116072800 A CN 116072800A CN 202310205054 A CN202310205054 A CN 202310205054A CN 116072800 A CN116072800 A CN 116072800A
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wavelength conversion
micro
elements
led
light
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CN116072800B (en
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庄永漳
仉旭
张闹
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Laiyu Optoelectronic Technology Suzhou Co ltd
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Laiyu Optoelectronic Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a Micro-LED display chip and a preparation method thereof, wherein the preparation method comprises the following steps: forming a plurality of Micro-LED elements on one side of the driving panel, wherein the Micro-LED elements emit excitation light under the independent driving of the driving panel; forming a plurality of wavelength conversion elements on one side of the driving panel, wherein the wavelength conversion elements convert the excitation light emitted by the Micro-LED elements into laser light, and the wavelength of the laser light is different from the color of the excitation light; a reflective layer is formed on the side of the wavelength conversion element, and the reflective layer reflects the excitation light and receives the laser light. Based on the above, the reflective layer is directly formed on the wavelength conversion element, so that the reflective layer is more tightly attached to the wavelength conversion element, thereby enabling the laser to be reflected to the light emitting surface of the wavelength conversion element by the reflective layer more, enabling the excitation light to be reflected back to the wavelength conversion element by the reflective layer more, and further improving the luminous efficiency, the light conversion efficiency and the collimation effect of the Micro-LED display chip.

Description

Micro-LED display chip and preparation method thereof
Technical Field
The invention relates to the technical field of Micro display, in particular to a Micro-LED display chip and a preparation method thereof.
Background
The Micro-LED display chip is a two-dimensional array display device in which high-density pixel light emitting units are integrated on a single chip. Micro-LED display chips are widely used in the fields of augmented reality (Augmented Reality, AR for short), near-eye display (NED for short), wearable display and the like because of the advantages of small size, long service life, high response speed, low power consumption and the like.
Although full-color display of the Micro-LED display chip can be realized by performing wavelength conversion on excitation light emitted by the Micro-LED element by the wavelength conversion element to obtain excited light of different wavelengths, the light emitting efficiency of the full-color Micro-LED display chip still needs to be further improved.
Disclosure of Invention
The invention discloses a Micro-LED display chip and a preparation method thereof, which are used for improving the luminous efficiency of the Micro-LED display chip.
In a first aspect, the invention discloses a method for preparing a Micro-LED display chip, which comprises the following steps: forming a plurality of Micro-LED elements on one side of a driving panel, wherein the Micro-LED elements emit excitation light under the independent driving of the driving panel; forming a plurality of wavelength conversion elements on one side of the driving panel, wherein the plurality of wavelength conversion elements are respectively arranged corresponding to the plurality of Micro-LED elements, the wavelength conversion elements at least cover the light emitting surfaces of the corresponding Micro-LED elements, the wavelength conversion elements convert excitation light emitted by the Micro-LED elements into laser light, and the color of the laser light is different from that of the excitation light; and forming a light reflecting layer on the side surface of the wavelength conversion element, wherein the side surface of the wavelength conversion element is a surface intersected with the light emitting surface of the wavelength conversion element, and the light reflecting layer reflects the excitation light and the laser.
In a second aspect, the invention discloses a Micro-LED display chip, which comprises a driving panel, a plurality of Micro-LED elements and a plurality of wavelength conversion elements, wherein the Micro-LED elements and the wavelength conversion elements are positioned on one side of the driving panel; adjacent Micro-LED elements are arranged at intervals and emit excitation light under the independent driving of the driving panel; the wavelength conversion elements are arranged at intervals and correspond to the Micro-LED elements respectively, the wavelength conversion elements at least cover the light emitting surfaces of the corresponding Micro-LED elements, the wavelength conversion elements convert excitation light emitted by the Micro-LED elements into laser light, and the color of the laser light is different from that of the excitation light; the side surface of each wavelength conversion element is provided with a light reflecting layer, a gap is arranged between the light reflecting layers of adjacent wavelength conversion elements, the side surface of each wavelength conversion element is a surface intersected with the light emitting surface of the wavelength conversion element, and the light reflecting layers reflect the excitation light and the laser.
According to the Micro-LED display chip and the preparation method thereof disclosed by the invention, the plurality of wavelength conversion elements and the plurality of Micro-LED elements are respectively and correspondingly arranged, the wavelength conversion elements at least cover the light-emitting surfaces of the corresponding Micro-LED elements, the side surfaces of the wavelength conversion elements are provided with the reflecting layers, the reflecting layers can reflect excitation light and laser, based on the reflecting layers, the reflecting layers are directly formed on the wavelength conversion elements, the reflecting layers can be more tightly attached to the wavelength conversion elements, laser and excitation light are prevented from overflowing or being lost between the reflecting layers and the wavelength conversion elements, so that the excitation light is reflected to the light-emitting surfaces of the wavelength conversion elements by the reflecting layers more, the excitation light is reflected to the wavelength conversion elements by the reflecting layers more, the wavelength conversion elements are excited to emit more excitation light, and the luminous efficiency, the light conversion efficiency and the collimation effect of the Micro-LED display chip can be further improved.
Drawings
In order to more clearly describe the embodiments of the present invention or the technical solutions in the background art, the following description will describe the drawings that are required to be used in the embodiments of the present invention or the background art.
Fig. 1 is a flowchart of a method for manufacturing a Micro-LED display chip according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a driving panel of a Micro-LED display chip according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a driving panel and Micro-LED elements in a Micro-LED display chip according to an embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a Micro-LED device with a first passivation layer according to another embodiment of the present invention.
Fig. 5 is a schematic cross-sectional view of a driving panel, micro-LED element, and wavelength conversion element in a Micro-LED display chip according to an embodiment of the present invention.
Fig. 6 is a schematic cross-sectional structure of a wavelength conversion element with a reflective layer according to an embodiment of the present invention.
Fig. 7 to 13 are schematic cross-sectional views of a Micro-LED device according to an embodiment of the present invention in a manufacturing process.
Fig. 14 to 18 are schematic cross-sectional views of a wavelength conversion device according to an embodiment of the present invention in a manufacturing process.
Fig. 19 is a schematic cross-sectional view of a reflective layer according to an embodiment of the invention in a manufacturing process.
Fig. 20 is a schematic cross-sectional view of a third passivation layer in a Micro-LED display chip according to an embodiment of the present invention.
Fig. 21 is a schematic cross-sectional view of a light blocking wall or a planarization layer in a Micro-LED display chip according to an embodiment of the present invention.
Fig. 22 is a schematic cross-sectional view of a filter element in a Micro-LED display chip according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The Micro-LED display chip comprises a Micro-LED array, wherein the Micro-LED array is a high-density integrated LED array with a distance of micrometer magnitude or even nanometer magnitude. Also, each Micro-LED element in the Micro-LED array can be individually addressed and lit as a pixel, such that the Micro-LED array displays a corresponding image.
However, since the size of the Micro-LED element is smaller, generally 0.1 to 10 microns, and the interval between adjacent Micro-LED elements is very small, generally 0.1 to 10 microns, and the light beam emitted by the Micro-LED element generally has a certain divergence angle, when the Micro-LED array is directly applied to the Micro-LED display chip, the light emitting efficiency of the Micro-LED display chip is lower, and the display effect of the Micro-LED display chip is poor. In order to realize full-color display, a wavelength conversion element array is selectively formed above the Micro-LED array to convert excitation light emitted from the Micro-LED element into laser light of different colors, and the wavelength conversion element also has problems such as light beam scattering, poor collimation, and low conversion efficiency.
Based on the preparation scheme, the light-emitting efficiency, the light-converting efficiency and the collimation effect of the Micro-LED display chip are improved by directly forming the light-reflecting layer on the side surface of the wavelength conversion element correspondingly arranged on the Micro-LED element and reflecting excitation light emitted by the Micro-LED element and laser light emitted by the wavelength conversion element through the light-reflecting layer, so that the display effect of the Micro-LED display chip is improved.
As an optional implementation of the disclosure, an embodiment of the present invention discloses a method for preparing a Micro-LED display chip, as shown in fig. 1, fig. 1 is a flowchart of a method for preparing a Micro-LED display chip according to an embodiment of the present invention, where the method includes:
s101: forming a plurality of Micro-LED elements on one side of the driving panel;
as shown in fig. 2, a driving panel 10 is provided, the driving panel 10 includes a substrate, and a driving circuit (not shown) located on one side of the substrate and a plurality of contacts electrically connected to the driving circuit, wherein the material of the substrate may include semiconductor materials such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, and the like, and may also include non-conductive materials such as glass, plastic, or sapphire wafers, the driving circuit includes a CMOS device, a TFT device, and the like, and the contacts include a first contact 101 and a second contact 102.
As shown in fig. 3, a plurality of Micro-LED elements 11 are formed on one side of the driving panel 10, and the Micro-LED elements 11 include a first electrode layer 110, an LED epitaxial structure layer 111, and a second electrode layer 112 sequentially stacked on the driving panel 10, wherein the first electrode layer 110 is electrically connected to the first contact 101, and the second electrode layer 112 is electrically connected to the second contact 102 to apply a first voltage to the first electrode layer 110 through the first contact 101 and a second voltage to the second electrode layer 112 through the second contact 102, so that the LED epitaxial structure layer 111 emits light under the driving of the first voltage and the second voltage having a voltage difference.
In some embodiments of the present invention, as shown in fig. 4, the first passivation layer 113 may be further formed on the light emitting surface and the side surface of the Micro-LED element 11 after forming the plurality of Micro-LED elements and before forming the plurality of wavelength conversion elements. It should be noted that the sidewalls of the Micro-LED element 11 have a second passivation layer 114 for electrical insulation, preventing the first electrode layer 110 from shorting the LED epitaxial structure layer 111.
In some embodiments, a plurality of Micro-LED elements 11 may be arrayed on the driving panel 10, and the driving circuit on the driving panel 10 may include a plurality of circuit units, each of which is electrically connected to one Micro-LED element 11 through one first contact 101 and one second contact 102, such that each circuit unit provides a driving signal to one Micro-LED element 11 to individually control light emission of the Micro-LED element 11.
That is, the Micro-LED element 11 may emit light of a specific wavelength under the separate driving of the driving panel 10. Since the light of the specific wavelength can excite the wavelength conversion element to emit the excited light, the light of the specific wavelength can also be referred to as excitation light, that is, the Micro-LED element 11 can emit the excitation light under the separate driving of the driving panel 10.
S102: forming a plurality of wavelength conversion elements on one side of the drive panel;
as shown in fig. 5, a plurality of wavelength conversion elements 12 are formed on one side of the drive panel 10, the plurality of wavelength conversion elements 12 are provided corresponding to the plurality of Micro-LED elements 11, the wavelength conversion elements 12 cover at least the light-emitting surfaces of the corresponding Micro-LED elements 11, the wavelength conversion elements 12 convert excitation light emitted from the Micro-LED elements 11 into excitation light, and the color of the excited light is different from the color of the excitation light.
In some embodiments, as shown in fig. 5, the wavelength conversion element 12 may cover not only the light-emitting surface S1 of the corresponding Micro-LED element 11, but also the side surface S2 of the corresponding Micro-LED element 11, where a surface of the Micro-LED element 11 facing away from the driving panel 10 is the light-emitting surface S1, a surface intersecting the light-emitting surface S1 is the side surface S2, and a cross-sectional shape of the Micro-LED element 11 may be a trapezoid or an arc. Of course, the present invention is not limited thereto, and in other embodiments, the wavelength conversion element 12 may cover only the light emitting surface S1 of the corresponding Micro-LED element 11, which is not described herein.
Since the wavelength conversion element 12 covers at least the light emitting surface S1 of the corresponding Micro-LED element 11, the excitation light emitted from the Micro-LED element 11 may enter the wavelength conversion element 12 and be converted into excitation light with different wavelengths by the wavelength conversion element 12, so that full-color display of the Micro-LED display chip may be realized by the excitation light with at least two colors.
In some embodiments of the present invention, the wavelength conversion element 12 covers the side S2 of the corresponding Micro-LED element 11, so as to further utilize the excitation light leaked from the side wall of the Micro-LED element 11 to improve the conversion efficiency of the wavelength conversion element 12.
S103: a reflective layer is formed on the side of the wavelength conversion element.
As shown in fig. 6, a light reflecting layer 13 is formed on the side of the wavelength conversion element 12, the light reflecting layer 13 wraps around the side of the wavelength conversion element 12, and a space 130 is provided between the light reflecting layers 13 of adjacent wavelength conversion elements 12, in other embodiments, a light blocking wall or a planarization layer may be formed between the adjacent wavelength conversion elements 12. The side surface of the wavelength conversion element 12 is a surface intersecting with the light emitting surface of the wavelength conversion element 12, and the light emitting surface of the wavelength conversion element 12 is a surface of the wavelength conversion element 12 facing away from the driving panel 10. The light reflecting layer 13 can reflect the excitation light and receive the laser light.
Because the reflecting layer 13 wraps the side surface of the wavelength conversion element 12, the reflecting layer 13 can be tightly attached to the wavelength conversion element 12, so that laser light and excitation light are prevented from overflowing or being lost between the reflecting layer 13 and the wavelength conversion element 12, so that the laser light is reflected to the light emitting surface of the wavelength conversion element 12 more by the reflecting layer 13, the excitation light is reflected to the wavelength conversion element 12 more by the reflecting layer 13, the wavelength conversion element 12 is excited to emit more laser light, on the other hand, the aim of adjusting the structure of the reflecting layer 13 can be achieved by adjusting the structure of the wavelength conversion element 12, the aim of collimating light can be achieved, the luminous efficiency, the light conversion efficiency and the collimation effect of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be improved.
In some embodiments of the present invention, a plurality of Micro-LED elements 11 may be formed on a driving panel 10 by bonding, as shown in fig. 7, and a driving panel 10 and an epitaxial substrate 20 are provided, and the epitaxial substrate 20 has thereon an LED epitaxial structure layer 111, and in some embodiments, the LED epitaxial structure layer 111 may include a first semiconductor layer 1110, a light emitting layer 1111, and a second semiconductor layer 1112 stacked in this order, wherein the first semiconductor layer 1110 may be an n-type semiconductor layer, the second semiconductor layer 1112 may be a p-type semiconductor layer, and the n-type semiconductor layer and the p-type semiconductor layer may be formed by doping or ion implantation. Further, the n-type semiconductor layer may be an n-type GaN layer, an InGaN layer, or the like, and the p-type semiconductor layer may be a p-type GaN layer, an InGaN layer, or the like. The light emitting layer 1111 may recombine holes provided by the first semiconductor layer 1110 and electrons provided by the second semiconductor layer 1112 and output light of a specific wavelength.
As shown in fig. 8, a bonding layer 140 is formed on the LED epitaxial structure layer 111, and a bonding layer 141 is formed on the driving panel 10. The bonding layer 140 and the bonding layer 141 may be the same or different in material. For example, the materials of the bonding layer 140 and the bonding layer 141 may be conductive materials such as metals or metal alloys, or non-conductive materials such as polyimide, polydimethylsiloxane, su-8 photoresist, or the like.
As shown in fig. 9, the LED epitaxial structure layer 111 is bonded to the drive panel 10 by bonding the bonding layer 140 and the bonding layer 141 to form the bonding layer 14, and the epitaxial substrate 20 is peeled off or removed to transfer the LED epitaxial structure layer 111 to the drive panel 10 by bonding the bonding layers. In this case, since the bonding layer 14 is electrically connected to the first semiconductor layer 110, the bonding layer 14 may serve as the first electrode layer 110.
As shown in fig. 10, the LED epitaxial structure layer 111 is etched to form LED epitaxial structure layers 111 of a plurality of Micro-LED elements 11. As shown in fig. 11, the bonding layer 14 is etched to form the first electrode layer 110 of the plurality of Micro-LED elements 11, wherein the remaining first electrode layer 110 includes a portion in contact electrical connection with the first contact 101.
As shown in fig. 12, a second passivation layer 114 is formed on the peripheral sidewalls of the Micro-LED element 11 and the first electrode layer 110. As shown in fig. 13, a second electrode layer 112 is formed, and the second electrode layer 112 extends from the top of the Micro-LED element 11 to the drive panel 10 at the bottom thereof, and is electrically connected to the second contact 102 on the drive panel 10.
In some embodiments of the present invention, the wavelength conversion element 12 may be formed by forming a sacrificial layer, as shown in fig. 14, and forming a sacrificial layer 15 on one side of the driving panel 10, where the sacrificial layer 15 includes a plurality of openings 150, and the bottoms of the openings 150 expose the corresponding Micro-LED elements 11, and each opening 150 exposes at least the light-emitting surface of the corresponding Micro-LED element 11.
In some embodiments, as shown in fig. 15, after forming the plurality of openings 150 on the sacrificial layer 15, further includes: the first passivation layer 113 is formed on the surface of the sacrificial layer 15, where the first passivation layer 113 covers at least the sidewall and the bottom of the opening 150 to protect the sacrificial layer 15, so that the sacrificial layer 15 is isolated from the wavelength conversion element 12, and the sacrificial layer 15 and the wavelength conversion element 12 are not mutually dissolved in the subsequent process. Then, as shown in fig. 15, a plurality of wavelength conversion elements 12 are respectively formed in the plurality of openings 150, the plurality of wavelength conversion elements 12 cover the Micro-LED elements 11 in the plurality of openings 150, respectively, and fill the gaps between the Micro-LED elements 11 and the sidewalls of the openings 150 so that the wavelength conversion elements 12 cover at least the light-emitting surfaces of the Micro-LED elements 11; then, the sacrifice layer 15 is removed, and the structure shown in fig. 4 is formed. In some embodiments, removing the sacrificial layer 15 includes: the sacrificial layer 15 and the first passivation layer 113 attached to the surface of the sacrificial layer 15 are removed, and the first passivation layer 113 covering the surface of the Micro-LED element 11 is remained, based on which the manufacturing process of the first passivation layer 113 can be simplified, and the cost can be saved.
In some embodiments, forming the plurality of openings 150 on the sacrificial layer 15 includes: the sacrificial layer 15 is etched to form an opening 150 having an inverted trapezoid cross-section, and the sidewall of the opening 150 has an inclination angle a of not less than 50 degrees, for example, a of not less than 50 degrees and less than 90 degrees. Forming the plurality of wavelength converting elements 12 within the plurality of apertures 150 includes: the plurality of wavelength conversion elements 12 having an inverted trapezoid cross-section are formed in the plurality of openings 150, respectively, such that the light reflecting layer 13 formed on the side surface of the wavelength conversion element 12 has a light reflecting cup structure, and the inclination angle of the light reflecting layer 13 is equal to the inclination angle a of the side wall of the opening 150, that is, the inclination angle of the light reflecting layer 13 is not less than 50 degrees. Based on this, the inclination angle a of the side wall of the opening 150 can be adjusted according to the light emitting angle of the Micro-LED element 11, so as to adjust the inclination angles of the wavelength conversion element 12 and the reflective layer 13, thereby improving the front light emitting efficiency of the Micro-LED element 11, and further improving the wavelength conversion efficiency and the collimation effect of the emitted light. Of course, the present invention is not limited thereto, and in other embodiments, the inclination angle a of the sidewall of the opening 150 may be equal to 90 degrees, which is not described herein.
On this basis, in order to realize multicolor display, in some embodiments, forming the plurality of wavelength conversion elements 12 on one side of the drive panel 10 includes at least: a plurality of first wavelength conversion elements and a plurality of second wavelength conversion elements are sequentially formed on one side of the drive panel 10, and the colors of the laser light emitted from the first wavelength conversion elements and the second wavelength conversion elements are different.
In some embodiments, the excitation light emitted from the Micro-LED element 11 is blue light, and the colors of the laser light emitted from the first wavelength conversion element and the second wavelength conversion element may be red and green, respectively. Of course, the present invention is not limited thereto, and in other embodiments, as shown in fig. 16, the plurality of wavelength conversion elements 12 may further include a plurality of first wavelength conversion elements 121, a plurality of second wavelength conversion elements 122, and a plurality of third wavelength conversion elements 123, with the colors of the excited light emitted from the first wavelength conversion elements 121, the second wavelength conversion elements 122, and the third wavelength conversion elements 123 being different.
In some embodiments, the excitation light emitted from the Micro-LED element 11 is blue light or ultraviolet light, and the excitation light emitted from the first, second, and third wavelength conversion elements 121, 122, and 123 is red light, green light, and blue light, respectively. On this account, it is necessary to form a plurality of first wavelength conversion elements 121, a plurality of second wavelength conversion elements 122, and a plurality of third wavelength conversion elements 123 in this order on one side of the drive panel 10. As shown in fig. 17, the first wavelength converting element 121 is formed in a part of the openings 150, then, as shown in fig. 18, the second wavelength converting element 122 is formed in another part of the openings 150, and then, the third wavelength converting element 123 is formed in the remaining part of the openings 150, resulting in the structure shown in fig. 16.
In some embodiments, the material of the wavelength conversion element may be a photoresist containing a wavelength conversion substance, and the wavelength conversion element may be obtained by an exposure and development process, and the preparation process is simple and controllable. In the process of forming the first wavelength conversion element 121, the first wavelength conversion material layer is coated on the entire surface, the first wavelength conversion element 121 arranged in an array is formed by an exposure and development process, and then the second wavelength conversion element 122 arranged in an array and the third wavelength conversion element 123 arranged in an array are sequentially formed in the same manner. The at least one wavelength converting element 121 and the adjacent at least one second wavelength converting element 122 and the adjacent at least one third wavelength converting element 123 form a full color pixel.
In some embodiments, the material of the wavelength conversion element may be a photoresist or other non-photoresist colloid containing a wavelength conversion substance, and the wavelength conversion element may be obtained through a dry etching process, and the preparation process of the wavelength conversion element is simpler and controllable. In the process of forming the first wavelength converting element 121, the first wavelength converting element 121 is first coated over the entire surface, the first wavelength converting element 121 arranged in an array is formed by a dry etching process, and then the second wavelength converting element 122 arranged in an array and the third wavelength converting element 123 arranged in an array are sequentially formed in the same manner. The at least one wavelength converting element 121 and the adjacent at least one second wavelength converting element 122 and the adjacent at least one third wavelength converting element 123 form a full color pixel.
In some embodiments of the present invention, the material of the wavelength converting element 12 comprises a wavelength converting substance fluorescent material, including a phosphor or quantum dot material, or the like. It is understood that if the light emitted from the first wavelength conversion element 121, the second wavelength conversion element 122, and the third wavelength conversion element 123 is red light, green light, and blue light, respectively, then the materials of the first wavelength conversion element 121, the second wavelength conversion element 122, and the third wavelength conversion element 123 may be red fluorescent material, green fluorescent material, and blue fluorescent material, respectively, mixed in a photoresist or other non-photoresist colloid.
Of course, the present invention is not limited thereto, and in other embodiments, if the excitation light emitted from the Micro-LED element 11 is blue light, a portion of the Micro-LED element 11 is correspondingly provided with a light-transmitting element to directly transmit or scatter the blue light emitted from the Micro-LED element 11. It will be appreciated that even though the material of the light transmissive element may be a transparent material, the sides of the light transmissive element may have a light reflective layer 13 to enhance the exit ratio of blue light.
In some embodiments, the sacrificial layer 15 is a photoresist layer, and forming the sacrificial layer 15 on one side of the driving panel 10 includes: forming a photoresist layer on one side of the driving panel 10; the photoresist layer is exposed and developed such that the photoresist layer forms a plurality of openings 150. Of course, the present invention is not limited thereto, and in other embodiments, other materials such as a silicon nitride layer or a silicon oxide layer may be used as the sacrificial layer 15, and in other embodiments, the sacrificial layer 15 may not be used, and the wavelength conversion element 12 may be formed only by using a mask, which is not described herein.
In some embodiments of the present invention, as shown in fig. 19, the reflective layer 13 may be formed on the entire surface of the wavelength conversion element 12 and the surface of the driving panel 10 between the wavelength conversion elements 12, and then the reflective layer 13 on the light-emitting surface of the wavelength conversion element 12 is removed by using a maskless dry etching process, so that the reflective layer 13 on the side of the wavelength conversion element 12 remains, and the structure shown in fig. 6 is formed. Based on this, the light reflecting layer 13 on the light emitting surface of the wavelength conversion element 12 can be removed while the light reflecting layer 13 on the side surface is maintained, and thus the process can be simplified and the cost can be saved. Again, the dry etching has a redeposition (re-deposition) effect, so that the reflective layer 13 of the sidewall can be thickened, and the reflective effect can be further improved. In addition, the light reflecting layers 13 between adjacent Micro-LED elements 11 may be etched away together, so that mutual separation of the light reflecting layers 13 may be achieved.
In some embodiments of the present invention, as shown in fig. 20, before forming the plurality of wavelength conversion elements 12 on one side of the driving panel 10, the method further includes: a third passivation layer 20 is formed on one side of the driving panel 10, and the third passivation layer 20 covers the light-emitting surface and the side surfaces of the Micro-LED elements 11 to insulate the adjacent Micro-LED elements 11 from each other. Wherein, the third passivation layer 20 may be located between the Micro-LED element 11 and the first passivation layer 113, and the third passivation layer 20 may cover the light emitting surface and the side of the driving panel 10 and the Micro-LED element 11.
The reflective layer 13 may be formed on the light-emitting surface and the side surface of the wavelength conversion element 12 by an atomic layer deposition process, a chemical vapor deposition process, an evaporation process, a sputtering process, or the like. The material of the light reflecting layer 13 may be metal, such as AL or Au metal, and the light reflecting layer 13 may be a distributed bragg mirror.
In addition, the light reflecting layer 13 of the light emitting surface of the wavelength conversion element 12 may be removed using a dry etching process including, but not limited to, an ion beam etching process and a plasma etching process. It will be appreciated that in the dry etching process, the wavelength conversion element based on the special structure of the present invention may be subjected to maskless dry etching, so that the reflective layer 13 on the surface of the driving panel 10 between adjacent wavelength conversion elements 12 is also removed, while the reflective layer 13 on the side of the wavelength conversion element 12 remains.
In some embodiments of the present invention, as shown in fig. 21, after forming a light reflecting layer 13 on the side surface of the wavelength conversion element 12, the method further includes: a light blocking wall or planarization layer 16 is formed around the Micro-LED elements 11 and their corresponding wavelength conversion elements 12, and the light blocking wall or planarization layer 16 is located between adjacent Micro-LED elements 11 and their corresponding wavelength conversion elements 12 and fills the gaps 130 between the reflective layers 13 of the adjacent wavelength conversion elements 12, so as to prevent light crosstalk between the adjacent Micro-LED elements 11 and improve flatness and stability of the structure. The material of the light blocking wall or the planarization layer 16 may be a black light blocking material, a photoresist material, an inorganic material, or the like. Also, the light blocking wall or planarization layer 16 may be formed using vapor deposition, evaporation, sputtering, or the like.
In some embodiments of the present invention, as shown in fig. 22, after forming a light reflecting layer 13 on the side surface of the wavelength conversion element 12, the method further includes: a plurality of filter elements 17 are formed on one side of the drive panel 10, the plurality of filter elements 17 are provided corresponding to the plurality of wavelength conversion elements 12, the filter elements 17 cover at least the light-emitting surfaces of the corresponding wavelength conversion elements 12, and the filter elements 17 are used for filtering light of other colors and transmitting the laser light emitted from the corresponding wavelength conversion elements 12.
In some embodiments of the invention, the material of the filter element 17 comprises an organic filter material, or the filter element 17 comprises an inorganic Bragg mirror or the like. It will be appreciated that if the plurality of wavelength conversion elements 12 includes a plurality of first wavelength conversion elements 121, a plurality of second wavelength conversion elements 122, and a plurality of third wavelength conversion elements 123, the filter element 17 includes a first filter element 171, a second filter element 172, and a third filter element 173, the first filter element 171 transmitting only the lasing light emitted by the first wavelength conversion elements 121, the second filter element 172 transmitting only the lasing light emitted by the second wavelength conversion elements 122, and the third filter element 173 transmitting only the lasing light emitted by the third wavelength conversion elements 123.
As another alternative implementation of the present disclosure, an embodiment of the present disclosure discloses a Micro-LED display chip, as shown in fig. 6, including a driving panel 10, and a plurality of Micro-LED elements 11 and a plurality of wavelength conversion elements 12 located at one side of the driving panel 10.
Wherein adjacent Micro-LED elements 11 are arranged at intervals and emit excitation light under the individual driving of the driving panel 10; the adjacent wavelength conversion elements 12 are arranged at intervals and respectively correspond to the Micro-LED elements 11, the wavelength conversion elements 12 at least cover the light emitting surfaces of the corresponding Micro-LED elements 11, the wavelength conversion elements 12 convert the excitation light emitted by the Micro-LED elements 11 into laser light, and the color of the laser light is different from that of the excitation light; each wavelength conversion element 12 has a light reflecting layer 13 on a side surface, and a gap 130 is provided between the light reflecting layers 13 of adjacent wavelength conversion elements 12, the side surface of the wavelength conversion element 12 is a surface intersecting with the light emitting surface of the wavelength conversion element 12, and the light reflecting layer 13 reflects excitation light and receives laser light.
Because the reflective layer 13 is located on the side surface of the wavelength conversion element 12, the reflective layer 13 can be more tightly attached to the wavelength conversion element 12, so that laser light and excitation light are prevented from overflowing or being lost between the reflective layer 13 and the wavelength conversion element 12, so that the laser light is more reflected to the light emitting surface of the wavelength conversion element 12 by the reflective layer 13, the excitation light is more reflected to the wavelength conversion element 12 by the reflective layer 13, the wavelength conversion element 12 is excited to emit more laser light, on the other hand, the aim of adjusting the structure of the reflective layer 13 can be achieved by adjusting the structure of the wavelength conversion element 12, the aim of collimating light can be achieved, and the luminous efficiency, the light conversion efficiency and the collimation effect of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be improved.
In some embodiments of the present invention, the wavelength conversion element 12 encapsulates the light exit face and sides of the Micro-LED element 11; the wavelength conversion element 12 has an inverted trapezoid cross-sectional shape, the light emitting layer 13 has a light reflecting cup structure, and the inclination angle of the light reflecting layer 13 is not less than 50 degrees. Based on this, the inclination angle a of the side wall of the opening 150 can be adjusted according to the light emitting angle of the Micro-LED element 11, so as to adjust the inclination angles of the wavelength conversion element 12 and the reflective layer 13, thereby improving the front light emitting efficiency of the Micro-LED element 11 and further improving the wavelength conversion efficiency.
In some embodiments of the present invention, as shown in FIG. 4, the Micro-LED display chip further includes a first passivation layer 113; the first passivation layer 113 is located between the Micro-LED element 11 and the wavelength conversion element 12, and the first passivation layer 113 covers at least the light emitting surface of the Micro-LED element 11. It should be noted that the sidewalls of the Micro-LED element 11 have a second passivation layer 114 for electrical insulation, preventing the first electrode layer 110 from shorting the LED epitaxial structure layer 111.
In some embodiments of the present invention, as shown in FIG. 20, the Micro-LED display chip further includes a third passivation layer 20; the third passivation layer 20 is located between the Micro-LED element 11 and the first passivation layer 113, and the third passivation layer 20 covers the light emitting surface and the side surfaces of the driving panel 10 and the Micro-LED element 11.
In some embodiments of the present invention, as shown in FIG. 21, the Micro-LED display chip further includes a light blocking wall or planarization layer 16; the light blocking wall or planarization layer 16 is located between adjacent Micro-LED elements 11 and their corresponding wavelength converting elements 12 and fills the void 130 between the light reflecting layers 13 of adjacent wavelength converting elements 12.
In some embodiments of the present invention, as shown in FIG. 22, the Micro-LED display chip further comprises a plurality of filter elements 17; the plurality of filter elements 17 are disposed corresponding to the plurality of wavelength conversion elements 12, and the filter elements 17 cover at least the light-emitting surfaces of the corresponding wavelength conversion elements 12, and the filter elements 17 are configured to filter light of other colors and transmit the laser light emitted from the corresponding wavelength conversion elements 12.
In some embodiments of the present invention, the plurality of wavelength conversion elements includes at least a plurality of first wavelength conversion elements and a plurality of second wavelength conversion elements, and the colors of the laser light emitted by the first wavelength conversion elements and the second wavelength conversion elements are different. As shown in fig. 22, the plurality of wavelength conversion elements 12 includes a plurality of first wavelength conversion elements 121, a plurality of second wavelength conversion elements 122, and a plurality of third wavelength conversion elements 123, and the colors of the laser lights emitted from the first wavelength conversion elements 121, the second wavelength conversion elements 122, and the third wavelength conversion elements 123 are different.
In some embodiments of the present invention, the material of the wavelength converting element 12 comprises a fluorescent material, including a phosphor or a quantum dot material, or the like. It is understood that if the excited light emitted from the first, second and third wavelength conversion elements 121, 122 and 123 is red, green and blue light, respectively, the materials of the first, second and third wavelength conversion elements 121, 122 and 123 may be red, green and blue fluorescent materials, respectively.
In some embodiments of the invention, the material of the filter element 17 comprises an organic filter material, or the filter element 17 comprises an inorganic Bragg mirror or the like. It will be appreciated that if the plurality of wavelength conversion elements 12 includes a plurality of first wavelength conversion elements 121, a plurality of second wavelength conversion elements 122, and a plurality of third wavelength conversion elements 123, the filter element 17 includes a first filter element 171, a second filter element 172, and a third filter element 173, the first filter element 171 transmitting only the lasing light emitted by the first wavelength conversion elements 121, the second filter element 172 transmitting only the lasing light emitted by the second wavelength conversion elements 122, and the third filter element 173 transmitting only the lasing light emitted by the third wavelength conversion elements 123.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present specification, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the present description, which is within the scope of the present description. Accordingly, the protection scope of the patent should be determined by the appended claims.

Claims (19)

1. The preparation method of the Micro-LED display chip is characterized by comprising the following steps:
forming a plurality of Micro-LED elements on one side of a driving panel, wherein the Micro-LED elements emit excitation light under the independent driving of the driving panel;
forming a plurality of wavelength conversion elements on one side of the driving panel, wherein the plurality of wavelength conversion elements are respectively arranged corresponding to the plurality of Micro-LED elements, the wavelength conversion elements at least cover the light emitting surfaces of the corresponding Micro-LED elements, the wavelength conversion elements convert excitation light emitted by the Micro-LED elements into laser light, and the color of the laser light is different from that of the excitation light;
and forming a light reflecting layer on the side surface of the wavelength conversion element, wherein the side surface of the wavelength conversion element is a surface intersected with the light emitting surface of the wavelength conversion element, and the light reflecting layer reflects the excitation light and the laser.
2. The method of manufacturing according to claim 1, wherein the forming a plurality of wavelength conversion elements on one side of the driving panel comprises:
forming a sacrificial layer covering the Micro-LED element on one side of the driving panel;
forming a plurality of openings on the sacrificial layer, wherein each opening at least exposes the light-emitting surface of the corresponding Micro-LED element;
forming a plurality of wavelength conversion elements in the plurality of openings respectively, wherein the plurality of wavelength conversion elements cover the Micro-LED elements in the plurality of openings respectively, so that the wavelength conversion elements at least cover the light emitting surface of the Micro-LED elements;
and removing the sacrificial layer.
3. The method of manufacturing of claim 2, wherein the sacrificial layer comprises a photoresist layer, and the forming a plurality of openings in the sacrificial layer comprises:
and exposing and developing the photoresist layer to form the plurality of openings on the photoresist layer.
4. The method of manufacturing according to claim 2, wherein after the forming of the plurality of openings in the sacrificial layer and before the forming of the plurality of wavelength converting elements in the plurality of openings, respectively, further comprises: forming a first passivation layer on the surface of the sacrificial layer, wherein the first passivation layer at least covers the side wall and the bottom of the opening;
the removing the sacrificial layer includes: and removing the sacrificial layer and the first passivation layer attached to the surface of the sacrificial layer, and reserving the first passivation layer covered on the surface of the Micro-LED element.
5. The method of manufacturing according to claim 2, wherein forming a plurality of openings in the sacrificial layer comprises: etching the sacrificial layer to form an opening with an inverted trapezoid cross section, wherein the inclination angle of the side wall of the opening is not less than 50 degrees;
the forming of the plurality of wavelength conversion elements within the plurality of apertures, respectively, includes: and a plurality of wavelength conversion elements with inverted trapezoid cross sections are respectively formed in the plurality of openings, so that a reflecting layer formed on the side surface of the wavelength conversion element is of a reflecting cup structure, and the inclination angle of the reflecting layer is not less than 50 degrees.
6. The method of manufacturing according to claim 1, wherein before forming the plurality of wavelength conversion elements on the one side of the drive panel, further comprising:
and forming a third passivation layer on one side of the driving panel, wherein the third passivation layer covers the light-emitting surface and the side surface of the Micro-LED element so as to insulate the adjacent Micro-LED elements from each other.
7. The method of manufacturing according to claim 2, wherein the step of removing the sacrificial layer comprises:
forming a reflective layer on the surface of the wavelength conversion element;
and removing the reflecting layer on the light-emitting surface of the wavelength conversion element by adopting a maskless dry etching process, and reserving the reflecting layer on the side surface of the wavelength conversion element.
8. The method of claim 1, wherein after forming a reflective layer on the side of the wavelength conversion element, further comprising:
and forming a light blocking wall or a planarization layer between the adjacent Micro-LED elements and the corresponding wavelength conversion elements.
9. The method of claim 1, wherein after forming a reflective layer on the side of the wavelength conversion element, further comprising:
a plurality of filter elements are formed on one side of the driving panel, the filter elements and the wavelength conversion elements are respectively and correspondingly arranged, the filter elements at least cover the light-emitting surfaces of the corresponding wavelength conversion elements, and the filter elements are used for filtering other color light and transmitting the corresponding laser emitted by the wavelength conversion elements.
10. The method of manufacturing according to claim 1, wherein forming a plurality of wavelength conversion elements on one side of the drive panel comprises at least:
a plurality of first wavelength conversion elements and a plurality of second wavelength conversion elements are sequentially formed on one side of the driving panel, and the colors of laser emitted by the first wavelength conversion elements and the colors emitted by the second wavelength conversion elements are different.
11. A Micro-LED display chip, comprising a driving panel, a plurality of Micro-LED elements and a plurality of wavelength conversion elements positioned on one side of the driving panel;
adjacent Micro-LED elements are arranged at intervals and emit excitation light under the independent driving of the driving panel;
the wavelength conversion elements are arranged at intervals and correspond to the Micro-LED elements respectively, the wavelength conversion elements at least cover the light emitting surfaces of the corresponding Micro-LED elements, the wavelength conversion elements convert excitation light emitted by the Micro-LED elements into laser light, and the color of the laser light is different from that of the excitation light;
the side surface of each wavelength conversion element is provided with a light reflecting layer, a gap is arranged between the light reflecting layers of adjacent wavelength conversion elements, the side surface of each wavelength conversion element is a surface intersected with the light emitting surface of the wavelength conversion element, and the light reflecting layers reflect the excitation light and the laser.
12. The Micro-LED display chip of claim 11, wherein the wavelength conversion element covers at least the light exit surface of the Micro-LED element;
the cross section of the wavelength conversion element is in an inverted trapezoid shape, the light reflecting layer is in a light reflecting cup structure, and the inclination angle of the light reflecting layer is not smaller than 50 degrees.
13. The Micro-LED display chip of claim 11, further comprising a first passivation layer;
the first passivation layer is located between the Micro-LED element and the wavelength conversion element, and covers at least the light emitting surface of the Micro-LED element.
14. The Micro-LED display chip of claim 13, further comprising a third passivation layer;
the third passivation layer is located between the Micro-LED element and the first passivation layer, and the third passivation layer covers the light emitting surface and the side face of the driving panel and the Micro-LED element.
15. The Micro-LED display chip of claim 11, further comprising a light blocking wall or a planarization layer;
the light blocking wall or the planarization layer is positioned between the adjacent Micro-LED elements and the corresponding wavelength conversion elements and fills gaps between the reflective layers of the adjacent wavelength conversion elements.
16. The Micro-LED display chip of claim 11, further comprising a plurality of filter elements; the plurality of optical filtering elements are respectively and correspondingly arranged with the plurality of wavelength conversion elements, the optical filtering elements at least cover the light emitting surfaces of the corresponding wavelength conversion elements, and the optical filtering elements are used for filtering other color light and transmitting the corresponding laser emitted by the wavelength conversion elements.
17. The Micro-LED display chip of claim 16, wherein the material of the filter element comprises an organic filter material or the filter element comprises an inorganic distributed bragg reflector.
18. The Micro-LED display chip of claim 11, wherein the plurality of wavelength conversion elements comprises at least a plurality of first wavelength conversion elements and a plurality of second wavelength conversion elements, wherein the colors of the laser light emitted from the first wavelength conversion elements and the second wavelength conversion elements are different.
19. The Micro-LED display chip of claim 11 or 18, wherein the material of the wavelength conversion element comprises a fluorescent material comprising a phosphor or a quantum dot material.
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