TW202240881A - Micro-led display device - Google Patents

Micro-led display device Download PDF

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TW202240881A
TW202240881A TW110148736A TW110148736A TW202240881A TW 202240881 A TW202240881 A TW 202240881A TW 110148736 A TW110148736 A TW 110148736A TW 110148736 A TW110148736 A TW 110148736A TW 202240881 A TW202240881 A TW 202240881A
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refractive index
micro
layer
index layer
low
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吉川貴博
服部大輔
森島諒太
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日商日東電工股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations

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Abstract

Provided is a micro-LED display device that has excellent luminous efficiency and in which color mixture is suppressed. A micro-LED display device according to the present invention comprises, in this order from the back side: a micro-LED array substrate including a plurality of micro-LEDs; a sealing part that seals the plurality of micro-LEDs; a low-refractive-index layer; and a plurality of wavelength converting layers that are formed into partitions. Each of the wavelength converting layers is so formed as to pair up with a corresponding one of the micro-LEDs in the thickness direction. The refractive index of the low-refractive-index layer is lower than the refractive index of the sealing part and the refractive index of the wavelength converting layers. The difference between the refractive index of the low-refractive-index layer and the refractive index of the sealing part is equal to or greater than 0.10. The difference between the refractive index of the low-refractive-index layer and the refractive index of the wavelength converting layers is equal to or greater than 0.10.

Description

微型LED顯示器裝置Micro LED Display Device

本發明涉及一種微型LED顯示器裝置。The invention relates to a micro LED display device.

近年來,就新的顯示器裝置而言,有開發一種微型LED顯示器,其係在排列成矩陣狀之像素內配置微型LED而構成者(例如專利文獻1、專利文獻2)。以微型LED顯示器來說,有文獻提出一種顯示器,該顯示器具備:微型LED陣列基板,其係配置複數個微型LED而構成者;及波長轉換層(螢光發光層)之陣列,其係設於微型LED陣列基板上,且吸收來自微型LED之光,並將該光之發光波長分別轉換成紅色、綠色及藍色各光之波長(例如專利文獻2)。在所述微型LED顯示器中,每一個子像素,係微型LED與波長轉換層為一組而構成。 先前技術文獻 專利文獻 In recent years, in terms of new display devices, a micro LED display has been developed, which is constituted by arranging micro LEDs in pixels arranged in a matrix (for example, Patent Document 1, Patent Document 2). In the case of micro-LED displays, there is a literature that proposes a display that has: a micro-LED array substrate, which is composed of a plurality of micro-LEDs; and an array of wavelength conversion layers (fluorescent light-emitting layers), which are arranged on on the micro LED array substrate, and absorb the light from the micro LEDs, and convert the emission wavelengths of the light into red, green and blue light wavelengths respectively (for example, patent document 2). In the micro-LED display, each sub-pixel is composed of a micro-LED and a wavelength conversion layer. prior art literature patent documents

專利文獻1:日本專利特開2020-43073號公報 專利文獻2:日本專利特表2016-523450號公報 Patent Document 1: Japanese Patent Laid-Open No. 2020-43073 Patent Document 2: Japanese Patent Application Publication No. 2016-523450

發明欲解決之課題 在如上述之微型LED顯示器中,有來自微型LED之光漏到與該微型LED對應之外的子像素(相鄰子像素、周邊子像素)而發生混色之問題。再者,還有下述問題:因波長轉換層內之散射而產生返回至背面側之光,而無法獲得充分之發光效率。 The problem to be solved by the invention In the above-mentioned micro-LED display, there is a problem that light from the micro-LED leaks to sub-pixels (adjacent sub-pixels, peripheral sub-pixels) other than those corresponding to the micro-LED to cause color mixing. Furthermore, there is also a problem that sufficient luminous efficiency cannot be obtained due to light returning to the back side due to scattering in the wavelength conversion layer.

本發明課題在於提供一種發光效率優異且抑制住混色之微型LED顯示器裝置。The object of the present invention is to provide a micro LED display device which is excellent in luminous efficiency and suppresses color mixing.

用以解決課題之手段 本發明微型LED顯示器裝置,具備:微型LED陣列基板,其包含複數個微型LED;且,自該微型LED陣列基板側起依序具備:密封部,其係密封複數個該微型LED;低折射率層;及區隔而形成之複數層波長轉換層;各層該波長轉換層係以在厚度方向上與1個該微型LED對應成為一組之方式形成;該低折射率層之折射率低於該密封部之折射率及波長轉換層之折射率;該低折射率層之折射率與該密封部之折射率的差為0.10以上;且該低折射率層之折射率與波長轉換層之折射率之差為0.10以上。 在一實施形態中,上述低折射率層之折射率為1.25以下。 在一實施形態中,上述低折射率層係一由多孔體構成之空隙層,且該多孔體係微細粒子彼此化學鍵結而構成者。 在一實施形態中,上述密封部係以黏著劑構成。 在一實施形態中,上述各層波長轉換層係藉由隔壁而間隔配置。 在一實施形態中,上述微型LED為藍色LED或紫外線LED。 在一實施形態中,上述微型LED顯示器裝置更具有彩色濾光片,該彩色濾光片係配置於上述波長轉換層之與上述低折射率層相反側之面。 means to solve problems The micro-LED display device of the present invention has: a micro-LED array substrate, which includes a plurality of micro-LEDs; and, sequentially from the side of the micro-LED array substrate: a sealing part, which seals a plurality of the micro-LEDs; low refractive index layer; and a plurality of wavelength conversion layers formed separately; each layer of the wavelength conversion layer is formed in a group corresponding to one of the micro LEDs in the thickness direction; the refractive index of the low refractive index layer is lower than the The refractive index of the sealing portion and the refractive index of the wavelength conversion layer; the difference between the refractive index of the low refractive index layer and the refractive index of the sealing portion is 0.10 or more; and the refractive index of the low refractive index layer and the refractive index of the wavelength conversion layer The difference is 0.10 or more. In one embodiment, the low refractive index layer has a refractive index of 1.25 or less. In one embodiment, the above-mentioned low refractive index layer is a void layer made of a porous body, and the fine particles of the porous system are chemically bonded to each other. In one embodiment, the sealing portion is made of an adhesive. In one embodiment, the above wavelength conversion layers are arranged at intervals by partition walls. In one embodiment, the above-mentioned micro LEDs are blue LEDs or ultraviolet LEDs. In one embodiment, the micro LED display device further includes a color filter disposed on the surface of the wavelength conversion layer opposite to the low refractive index layer.

發明效果 根據本發明,可提供一種發光效率優異且抑制住混色之微型LED顯示器裝置。 Invention effect According to the present invention, it is possible to provide a micro LED display device which is excellent in luminous efficiency and suppresses color mixing.

A.微型LED顯示器裝置 圖1係本發明一實施形態之微型LED顯示器裝置的概略截面圖。本實施形態之微型LED顯示器裝置100具備:微型LED陣列基板10,其包含複數個微型LED11;且,自微型LED陣列基板側起依序具備:密封部20,其係密封複數個微型LED11;低折射率層30;及區隔而形成之複數層波長轉換層40。代表上,微型LED陣列基板10具備驅動基板12與複數個微型LED11,該微型LED11係於該驅動基板12上排列成陣列狀(矩陣狀)。各層波長轉換層40係以在厚度方向上與1個微型LED11對應成為一組之方式形成。代表上,係於1個子像素中分別各包含一波長轉換層40與微型LED11。藉由使來自微型LED11之光透射波長轉換層40,可形成紅色、綠色、藍色之子像素。此外,直接利用來自微型LED之光的子像素時(例如藉由藍色LED形成藍色子像素時),會在該處省略波長轉換層或可替代成其他層(例如光擴散層)。在一實施形態中,各波長轉換層係藉由隔壁50(遮光層)而間隔配置。 A. Micro LED display device FIG. 1 is a schematic cross-sectional view of a micro LED display device according to an embodiment of the present invention. The micro-LED display device 100 of the present embodiment is provided with: a micro-LED array substrate 10, which includes a plurality of micro-LEDs 11; Refractive index layer 30; and a plurality of wavelength conversion layers 40 formed at intervals. Representatively, the micro-LED array substrate 10 includes a driving substrate 12 and a plurality of micro-LEDs 11 , and the micro-LEDs 11 are arranged in an array (matrix) on the driving substrate 12 . Each wavelength conversion layer 40 is formed so as to correspond to one micro LED 11 in the thickness direction and form a group. Representatively, each sub-pixel includes a wavelength conversion layer 40 and a micro-LED 11 respectively. Red, green, and blue sub-pixels can be formed by transmitting the light from the micro LED 11 through the wavelength conversion layer 40 . In addition, when sub-pixels directly utilize light from micro LEDs (eg, when blue sub-pixels are formed by blue LEDs), the wavelength conversion layer is omitted there or can be replaced by other layers (eg, a light-diffusing layer). In one embodiment, the respective wavelength conversion layers are spaced apart by partition walls 50 (light-shielding layers).

在一實施形態中,上述低折射率層30係形成於密封部20之與微型LED陣列基板10相反側之面整面。又,在一實施形態中,上述低折射率層30係直接(亦即不隔著其他層)設置於密封部20上。In one embodiment, the above-mentioned low refractive index layer 30 is formed on the entire surface of the sealing portion 20 opposite to the micro LED array substrate 10 . Moreover, in one embodiment, the above-mentioned low-refractive-index layer 30 is provided on the sealing part 20 directly (that is, without interposing other layers).

低折射率層30之折射率低於密封部20之折射率及波長轉換層40之折射率。低折射率層30之折射率與密封部20之折射率的差為0.10以上。又,低折射率層30之折射率與波長轉換層40之折射率的差為0.10以上。The refractive index of the low refractive index layer 30 is lower than the refractive index of the sealing part 20 and the refractive index of the wavelength conversion layer 40 . The difference between the refractive index of the low refractive index layer 30 and the refractive index of the sealing part 20 is 0.10 or more. Also, the difference between the refractive index of the low refractive index layer 30 and the refractive index of the wavelength conversion layer 40 is 0.10 or more.

在本發明中,係藉由於密封部與波長轉換層之間配置低折射率層,於各層間產生折射率差。結果,從微型LED發光並在波長轉換層內散射而返回至背面側之光的至少一部分,可在波長轉換層與低折射率層之界面反射而朝視辨側射出。結果,能提升發光效率。又,從微型LED往斜向發光,但無法到達對應之波長轉換層(同一子像素內之波長轉換層)而往其周邊之光的至少一部分,會在低折射率層與密封部之界面反射,而返回至背面側。結果能抑制混色。本發明實施形態之微型LED顯示器裝置不僅高精細,在亮度較以往之顯示器更高且廣色域之方面亦有利。In the present invention, by disposing the low-refractive-index layer between the sealing portion and the wavelength conversion layer, a difference in refractive index is generated between the layers. As a result, at least a part of the light emitted from the micro LED, scattered in the wavelength conversion layer and returned to the rear side can be reflected at the interface between the wavelength conversion layer and the low refractive index layer and emitted toward the viewing side. As a result, luminous efficiency can be improved. Also, light is emitted obliquely from the micro LED, but cannot reach the corresponding wavelength conversion layer (the wavelength conversion layer in the same sub-pixel) and at least part of the light going to its periphery will be reflected at the interface between the low refractive index layer and the sealing part , and return to the back side. As a result, color mixing can be suppressed. The micro-LED display device of the embodiment of the present invention is not only high-definition, but also advantageous in terms of higher brightness and wide color gamut than conventional displays.

B.低折射率層 低折射率層之折射率宜為1.30以下,較宜為1.25以下,更宜為1.20以下,尤宜為1.15以下。低折射率層之折射率越低越好,惟其下限例如為1.07以上(宜為1.05以上)。本說明書中,折射率係指在波長550nm下測定之折射率。 B. Low refractive index layer The refractive index of the low refractive index layer is preferably not more than 1.30, more preferably not more than 1.25, more preferably not more than 1.20, and especially preferably not more than 1.15. The lower the refractive index of the low-refractive index layer, the better, but the lower limit thereof is, for example, 1.07 or more (preferably 1.05 or more). In this specification, the refractive index refers to the refractive index measured at a wavelength of 550 nm.

如上述,低折射率層之折射率與密封部之折射率的差為0.10以上。低折射率層之折射率與密封部之折射率的差宜為0.20以上,較宜為0.30以上。若在所述範圍內,上述效果便顯著。低折射率層之折射率與密封部之折射率的差的上限例如為0.50(宜為0.70)。As mentioned above, the difference between the refractive index of a low-refractive-index layer and the refractive index of a sealing part is 0.10 or more. The difference between the refractive index of the low-refractive index layer and the sealing portion is preferably 0.20 or more, more preferably 0.30 or more. If it is in the said range, the said effect will be remarkable. The upper limit of the difference between the refractive index of the low refractive index layer and the refractive index of the sealing part is, for example, 0.50 (preferably 0.70).

如上述,低折射率層之折射率與波長轉換層之折射率的差為0.10以上。低折射率層之折射率與波長轉換層之折射率的差宜為0.20以上,較宜為0.30以上。若在所述範圍內,上述效果便顯著。低折射率層之折射率與波長轉換層之折射率的差的上限例如為0.50(宜為0.70)。As described above, the difference between the refractive index of the low refractive index layer and the refractive index of the wavelength conversion layer is 0.10 or more. The difference between the refractive index of the low refractive index layer and the refractive index of the wavelength conversion layer is preferably at least 0.20, more preferably at least 0.30. If it is in the said range, the said effect will be remarkable. The upper limit of the difference between the refractive index of the low refractive index layer and the refractive index of the wavelength conversion layer is, for example, 0.50 (preferably 0.70).

上述低折射率層之厚度宜為0.01µm~1000µm,較宜為0.05µm~100µm,更宜為0.1µm~80μm,尤宜為0.3µm~50µm。The thickness of the above-mentioned low refractive index layer is preferably 0.01 µm to 1000 µm, more preferably 0.05 µm to 100 µm, more preferably 0.1 µm to 80 µm, and especially preferably 0.3 µm to 50 µm.

低折射率層可採用任意適當之構成。在一實施形態中,低折射率層具有空隙。低折射率層宜可藉由塗敷或印刷等來形成。構成低折射率層之材料可採用例如記載於國際公開第2004/113966號、日本專利特開2013-254183號公報及日本專利特開2012-189802號公報之材料。具體而言可列舉例如:二氧化矽系化合物;水解性矽烷類、以及其部分水解物及脫水縮合物;有機聚合物;含矽烷醇基之矽化合物;使矽酸鹽與酸或離子交換樹脂接觸而得之活性二氧化矽;聚合性單體(例如(甲基)丙烯酸系單體及苯乙烯系單體);硬化性樹脂(例如(甲基)丙烯酸系樹脂、含氟樹脂及胺甲酸乙酯樹脂);及該等之組合。低折射率層可藉由將所述材料之溶液或分散液進行塗敷或印刷等來形成。Any appropriate configuration can be adopted for the low-refractive index layer. In one embodiment, the low refractive index layer has voids. The low refractive index layer can preferably be formed by coating or printing. The material constituting the low-refractive index layer can be, for example, those described in International Publication No. 2004/113966, Japanese Patent Laid-Open No. 2013-254183, and Japanese Patent Laid-Open No. 2012-189802. Specifically, examples include: silicon dioxide-based compounds; hydrolyzable silanes, and their partial hydrolyzates and dehydration condensates; organic polymers; silicon compounds containing silanol groups; Activated silica obtained by contact; polymerizable monomers (such as (meth)acrylic monomers and styrene monomers); hardening resins (such as (meth)acrylic resins, fluorine-containing resins, and urethane ethyl ester resins); and combinations thereof. The low-refractive-index layer can be formed by applying or printing a solution or dispersion of the above material.

具有空隙之低折射率層之空隙率宜為35體積%以上,較宜為38體積%以上,尤宜為40體積%以上。若在所述範圍內,便可形成折射率特別低之低折射率層。低折射率層之空隙率的上限例如為90體積%以下,且宜為75體積%以下。若在所述範圍內,便可形成強度優異之低折射率層。空隙率係從以橢圓偏光計測定之折射率之值,利用勞洛公式(Lorentz‐Lorenz's formula)算出空隙率之值。The porosity of the low-refractive index layer having voids is preferably at least 35% by volume, more preferably at least 38% by volume, and especially preferably at least 40% by volume. If it exists in the said range, the low-refractive-index layer with an especially low refractive index can be formed. The upper limit of the porosity of the low refractive index layer is, for example, 90% by volume or less, preferably 75% by volume or less. If it exists in the said range, the low-refractive-index layer excellent in strength can be formed. The porosity is calculated from the value of the refractive index measured with an ellipsometer, and the value of the porosity is calculated using Lorentz-Lorenz's formula.

低折射率層之空隙(孔)的尺寸係指空隙(孔)之長軸的直徑及短軸的直徑中之長軸的直徑。空隙(孔)的尺寸例如為2nm~500nm。空隙(孔)的尺寸例如為2nm以上,宜為5nm以上,較宜為10nm以上,更宜為20nm以上。另一方面,空隙(孔)的尺寸例如為500nm以下,宜為200nm以下,較宜為100nm以下。空隙(孔)的尺寸的範圍例如為2nm~500nm,宜為5nm~500nm,較宜為10nm~200nm,更宜為20nm~100nm。空隙(孔)的尺寸可因應目的及用途等調整成所期望的尺寸。The size of the void (pore) of the low-refractive index layer refers to the diameter of the major axis among the diameter of the major axis and the diameter of the minor axis of the void (pore). The size of the void (pore) is, for example, 2 nm to 500 nm. The size of the void (pore) is, for example, 2 nm or more, preferably 5 nm or more, more preferably 10 nm or more, more preferably 20 nm or more. On the other hand, the size of voids (pores) is, for example, 500 nm or less, preferably 200 nm or less, more preferably 100 nm or less. The size of the voids (pores) ranges, for example, from 2 nm to 500 nm, preferably from 5 nm to 500 nm, more preferably from 10 nm to 200 nm, more preferably from 20 nm to 100 nm. The size of the void (pore) can be adjusted to a desired size according to the purpose and application.

空隙(孔)的尺寸可利用BET試驗法來定量化。具體上,係於比表面積測定裝置(Micromeritics公司製:ASAP2020)之毛細管中投入0.1g之試樣(所形成之空隙層)後,在室溫下進行減壓乾燥24小時,將空隙結構內之氣體脫氣。然後,藉由使上述試樣吸附氮氣,繪出吸附等溫線來求算細孔分布。藉此可評估空隙尺寸。The size of voids (pores) can be quantified by the BET test method. Specifically, 0.1 g of the sample (formed void layer) was put into the capillary of a specific surface area measuring device (manufactured by Micromeritics: ASAP2020), and dried under reduced pressure at room temperature for 24 hours to remove the voids in the void structure. Gas outgassing. Then, the pore distribution was calculated by making the above-mentioned sample adsorb nitrogen gas and drawing an adsorption isotherm. From this the void size can be assessed.

低折射率層之霧度例如小於5%,宜小於3%。另一方面,霧度例如為0.1%以上,宜為0.2%以上。霧度之範圍例如為0.1%以上且小於5%,宜為0.2%以上且小於3%。霧度例如可以以下方法來測定。此外,霧度係低折射率層之透明性的指標。 將空隙層(低折射率層)裁切成50mm×50mm的尺寸並設置於霧度計(村上色彩技術研究所公司製:HM-150)上,測定霧度。關於霧度值可利用以下式算出。 霧度(%)=[漫透射率(%)/全光線透射率(%)]×100(%) The haze of the low refractive index layer is, for example, less than 5%, preferably less than 3%. On the other hand, the haze is, for example, 0.1% or more, preferably 0.2% or more. The range of the haze is, for example, not less than 0.1% and less than 5%, preferably not less than 0.2% and less than 3%. Haze can be measured by the following method, for example. In addition, the haze is an indicator of the transparency of the low-refractive index layer. The void layer (low refractive index layer) was cut out to a size of 50 mm×50 mm, and it was set on a haze meter (manufactured by Murakami Color Technology Laboratory Co., Ltd.: HM-150), and the haze was measured. The haze value can be calculated by the following formula. Haze (%)=[diffuse transmittance (%)/total light transmittance (%)]×100(%)

上述於內部具有空隙之低折射率層,可舉例如多孔質層、及/或至少一部份具有空氣層之低折射率層。多孔質層在代表上包含氣凝膠、及/或粒子(例如中空微粒子及/或多孔質粒子)。低折射率層宜可為奈米多孔層(具體上為90%以上之微細孔的直徑在10 -1nm~10 3nm之範圍內的多孔質層)。 The aforementioned low-refractive-index layer having voids therein may be, for example, a porous layer and/or a low-refractive-index layer having at least a part of an air layer. The porous layer typically includes airgel and/or particles (for example, hollow fine particles and/or porous particles). The low refractive index layer is preferably a nanoporous layer (specifically, a porous layer in which more than 90% of the micropores have a diameter in the range of 10 −1 nm to 10 3 nm).

上述粒子可採用任意適當之粒子。粒子代表上係由二氧化矽系化合物構成。粒子形狀可舉例如球狀、板狀、針狀、串繩狀及葡萄串狀。串繩狀粒子可舉例如複數個具有球狀、板狀或針狀形狀之粒子連接成串珠狀之粒子、短纖維狀粒子(例如日本專利特開2001-188104號公報記載之短纖維狀粒子)及該等之組合。串繩狀粒子可為直鏈狀亦可為支鏈狀。葡萄串狀粒子可舉例如複數個球狀、板狀及針狀粒子凝集而成葡萄串狀者。粒子形狀可藉由例如穿透型電子顯微鏡觀察來確認。Any appropriate particles can be used as the above-mentioned particles. Particles represent that the upper system is composed of silicon dioxide-based compounds. The shape of the particles can be, for example, spherical, plate-like, needle-like, string-like and grape-bunch-like. The string-like particles can be, for example, a plurality of spherical, plate-like or needle-like particles connected to form a bead-like particle, short fiber-like particles (such as the short-fibrous particles described in Japanese Patent Laid-Open No. 2001-188104) and combinations thereof. The string-like particles may be linear or branched. Grape-bunch-like particles can be, for example, grape-bunch-like aggregates of a plurality of spherical, plate-like, and needle-like particles. The particle shape can be confirmed by observation with a transmission electron microscope, for example.

低折射率層之厚度宜為0.2µm~5µm,較宜為0.3µm~3µm。低折射率層之厚度若在所述範圍內,本發明防止破損之效果便顯著。並且,可容易實現上述所期望之厚度比。The thickness of the low refractive index layer is preferably 0.2µm~5µm, more preferably 0.3µm~3µm. If the thickness of the low-refractive index layer is within the above-mentioned range, the damage prevention effect of the present invention will be remarkable. Furthermore, the desired thickness ratio described above can be easily realized.

低折射率層代表上如上述可藉由塗敷或印刷來形成。若為所述構成,便可藉由捲對捲來連續設置低折射率層。印刷可採用任意適當之方式。印刷方法具體上可為凹版印刷、膠版印刷、柔版印刷等有版式印刷方法,亦可為噴墨印刷、雷射印刷、靜電印刷等無版式印刷方法。Typically, the low refractive index layer can be formed by coating or printing as described above. According to the said structure, a low-refractive-index layer can be provided continuously by roll-to-roll. Printing can be done in any suitable manner. Specifically, the printing method can be gravure printing, offset printing, flexographic printing and other printing methods with a format, and can also be a non-format printing method such as inkjet printing, laser printing, and electrostatic printing.

以下,針對低折射率層之具體構成之一例進行說明。本實施形態之低折射率層係由一種或複數種可形成微細空隙結構的構成單元構成,且該構成單元彼此係透過觸媒作用而化學鍵結。構成單元之形狀可舉例如粒狀、纖維狀、棒狀、平板狀。構成單元可僅具有1種形狀,亦可組合具有2種以上形狀。在一實施形態中,上述低折射率層係一由多孔體構成之空隙層,且該多孔體係微細粒子彼此化學鍵結而構成者。以下主要針對由微細粒子彼此化學鍵結而構成的多孔體構成之空隙層之情形進行說明。Hereinafter, an example of a specific configuration of the low-refractive index layer will be described. The low-refractive-index layer in this embodiment is composed of one or more structural units capable of forming a fine void structure, and the structural units are chemically bonded to each other through the action of a catalyst. The shape of the constituent unit may, for example, be granular, fibrous, rod, or flat. A constituent unit may have only 1 type of shape, and may have 2 or more types of shapes in combination. In one embodiment, the above-mentioned low refractive index layer is a void layer made of a porous body, and the fine particles of the porous system are chemically bonded to each other. The following description will mainly focus on the case of a void layer composed of a porous body composed of fine particles chemically bonded to each other.

所述空隙層在空隙層形成步驟中,例如可藉由使微細孔粒子彼此化學鍵結來形成。此外,本發明實施形態中「粒子」(例如上述微細孔粒子)之形狀無特別限定,例如可為球狀亦可為其他形狀。又,在本發明實施形態中,上述微細孔粒子例如亦可為溶膠凝膠串珠狀粒子、奈米粒子(中空奈米二氧化矽、奈米球粒子)、奈米纖維等。微細孔粒子代表上包含無機物。無機物之具體例可舉矽(Si)、鎂(Mg)、鋁(Al)、鈦(Ti)、鋅(Zn)、鋯(Zr)。該等可單獨使用亦可併用2種以上。在一實施形態中,上述微細孔粒子例如為矽化合物的微細孔粒子,且上述多孔體例如為聚矽氧多孔體。上述矽化合物的微細孔粒子例如包含膠狀二氧化矽化合物的粉碎體。又,至少一部分具有多孔質層及/或空氣層之低折射率層的其他形態例如有以下空隙層:由奈米纖維等纖維狀物質構成,且該纖維狀物質纏結形成空隙而形成層者。所述空隙層之製造方法無特別限定,例如可與上述微細孔粒子彼此化學鍵結之多孔體的空隙層之情況相同。更多其他形態可舉使用中空奈米粒子或奈米黏土之空隙層、使用中空奈米球或氟化鎂形成之空隙層。空隙層可為由單一構成物質構成之空隙層,亦可為由複數種構成物質構成之空隙層。空隙層可僅以單一之上述形態構成,亦可以包含複數種上述形態來構成。The void layer can be formed, for example, by chemically bonding micropore particles to each other in the void layer forming step. In addition, the shape of the "particle" (such as the microporous particle) in the embodiment of the present invention is not particularly limited, for example, it may be spherical or other shapes. In addition, in the embodiment of the present invention, the microporous particles may be, for example, sol-gel beaded particles, nanoparticles (hollow nano-silica, nanosphere particles), nanofibers, and the like. The microporous particles represent the inclusion of inorganic substances. Specific examples of inorganic substances include silicon (Si), magnesium (Mg), aluminum (Al), titanium (Ti), zinc (Zn), and zirconium (Zr). These may be used alone or in combination of two or more. In one embodiment, the microporous particles are, for example, microporous particles of a silicon compound, and the porous body is, for example, a polysiloxane porous body. The microporous particles of the above-mentioned silicon compound include, for example, pulverized colloidal silicon dioxide compounds. Another form of the low-refractive index layer having at least a part of the porous layer and/or air layer includes, for example, a void layer: a layer formed of fibrous substances such as nanofibers entangled to form voids. The method for producing the void layer is not particularly limited, and it may be the same as the above-mentioned void layer of a porous body in which micropore particles are chemically bonded to each other, for example. More other forms can include void layers using hollow nanoparticles or nanoclay, void layers using hollow nanospheres or magnesium fluoride. The void layer may be a void layer composed of a single constituent substance, or may be a void layer composed of a plurality of constituent substances. The void layer may be composed of only one of the above-mentioned forms, or may be composed of a plurality of the above-mentioned forms.

本實施形態中,多孔體的多孔質結構例如可為孔結構呈連續狀態之開放性發泡結構體。開放性發泡結構體例如係表示上述聚矽氧多孔體中孔結構以三維型態連結,亦可說是孔結構之內部空隙呈連續狀態。藉由多孔質體具有開放性發泡結構,可提高空隙率。不過當使用中空二氧化矽之類的閉孔粒子(各具有孔結構之粒子)時,無法形成開放性發泡結構。另一方面,例如使用二氧化矽溶膠粒子(形成溶膠之膠狀矽化合物的粉碎物)時,因該粒子具有三維樹狀結構,故在塗敷膜(含膠狀矽化合物的粉碎物之溶膠塗敷膜)中藉由該樹狀粒子沉降及堆積,可容易形成開放性發泡結構。較宜為低折射率層具有開放性發泡結構包含複數個細孔分布之整塊(monolith)結構。整塊結構係指例如階層結構,其包含存在奈米尺寸之微細空隙之結構與該奈米空隙集結而成之開放性發泡結構。要形成整塊結構時,例如係以微細空隙賦予膜強度的同時以粗大的開放性發泡空隙賦予高空隙率,而可兼顧膜強度與高空隙率。所述整塊結構宜為可藉由對粉碎成二氧化矽溶膠粒子之前階段的凝膠(膠狀矽化合物),控制所要生成之空隙結構的細孔分布來形成。又,例如在粉碎膠狀矽化合物時,藉由將粉碎後之二氧化矽溶膠粒子之粒度分布控制成所期望的尺寸,可形成整塊結構。In this embodiment, the porous structure of the porous body may be, for example, an open foam structure in which the pore structure is in a continuous state. The open foam structure means, for example, that the mesopore structure of the polysiloxane porous body is connected in a three-dimensional form, and it can also be said that the internal voids of the pore structure are in a continuous state. Since the porous body has an open foam structure, the porosity can be increased. However, when closed-pore particles (each having a pore structure) such as hollow silica are used, an open foam structure cannot be formed. On the other hand, for example, when using silica sol particles (a pulverized product of a colloidal silicon compound forming a sol), the particles have a three-dimensional tree structure, so the coating film (a sol containing a pulverized product of a colloidal silicon compound) In the coated film), the dendritic particles settle and accumulate to easily form an open foam structure. Preferably, the low-refractive index layer has an open foam structure comprising a monolith structure in which a plurality of fine pores are distributed. The monolithic structure refers to, for example, a hierarchical structure, which includes a structure with nanometer-sized microvoids and an open foam structure in which the nanovoids are assembled. When a monolithic structure is to be formed, for example, the strength of the film is imparted by the microscopic voids and the high porosity is imparted by the coarse open foamed voids, so that both the strength of the film and the high porosity can be achieved. The monolithic structure is preferably formed by controlling the pore distribution of the pore structure to be formed on the gel (colloidal silicon compound) before being pulverized into silica sol particles. Also, for example, when pulverizing a colloidal silicon compound, a monolithic structure can be formed by controlling the particle size distribution of the pulverized silica sol particles to a desired size.

低折射率層例如如上述包含膠狀化合物的粉碎物,且該粉碎物彼此係化學鍵結。低折射率層中粉碎物彼此化學性鍵結(化學鍵)之形態無特別限制,可舉例如交聯鍵結、共價鍵結、氫鍵結等。The low-refractive-index layer contains, for example, pulverized colloidal compounds as described above, and the pulverized products are chemically bonded to each other. The form of chemical bonds (chemical bonds) between the pulverized materials in the low refractive index layer is not particularly limited, and examples thereof include crosslink bonds, covalent bonds, hydrogen bonds, and the like.

膠狀化合物之凝膠形態無特別限制。一般而言,「凝膠」係指具有溶質因相互作用失去獨立運動性而集結之結構並呈固化之狀態。膠狀化合物例如可為濕凝膠亦可為乾凝膠。此外,一般而言,濕凝膠係指包含分散介質且溶質在分散介質中呈一樣結構者,乾凝膠則指去除溶劑後溶質呈具有空隙之網目結構者。The gel form of the jelly compound is not particularly limited. Generally speaking, "gel" refers to a state in which solutes have a structure in which they lose their independent mobility due to interactions and are solidified. The jelly compound can be, for example, a wet gel or a dry gel. In addition, generally speaking, a wet gel refers to a solute that contains a dispersion medium and has the same structure in the dispersion medium, and a dry gel refers to a solute that has a network structure with voids after the solvent is removed.

膠狀化合物可舉例如單體化合物膠化之膠化物。具體而言,上述膠狀矽化合物可舉例如單體的矽化合物彼此鍵結而成之膠化物,具體例可舉單體的矽化合物彼此共價鍵結、氫鍵結或以分子間力鍵結而成之膠化物。共價鍵結可舉例如利用脫水縮合進行之鍵結。The jelly compound may be, for example, a gelled product of monomeric compounds. Specifically, the above-mentioned colloidal silicon compound can be, for example, a gel formed by bonding silicon compounds of monomers to each other. Specific examples include covalent bonding, hydrogen bonding, or intermolecular bonding of silicon compounds of monomers. A gelatinized compound. The covalent bond may, for example, be bonded by dehydration condensation.

低折射率層中上述粉碎物之體積平均粒徑例如為0.10µm以上,宜為0.20µm以上,較宜為0.40µm以上。另一方面,體積平均粒徑例如為2.00µm以下,宜為1.50µm以下,較宜為1.00µm以下。體積平均粒徑之範圍例如為0.10µm~2.00µm,宜為0.20µm~1.50µm,較宜為0.40µm~1.00µm。粒度分布例如可利用動態光散射法、雷射繞射法等粒度分布評估裝置及掃描型電子顯微鏡(SEM)、穿透型電子顯微鏡(TEM)等電子顯微鏡等進行測定。此外,體積平均粒徑係粉碎物之粒度參差之指標。The volume average particle diameter of the pulverized matter in the low refractive index layer is, for example, 0.10 µm or more, preferably 0.20 µm or more, more preferably 0.40 µm or more. On the other hand, the volume average particle diameter is, for example, 2.00 µm or less, preferably 1.50 µm or less, more preferably 1.00 µm or less. The range of the volume average particle diameter is, for example, 0.10 µm to 2.00 µm, preferably 0.20 µm to 1.50 µm, more preferably 0.40 µm to 1.00 µm. The particle size distribution can be measured, for example, using a particle size distribution evaluation device such as a dynamic light scattering method or a laser diffraction method, and an electron microscope such as a scanning electron microscope (SEM) or a transmission electron microscope (TEM). In addition, the volume average particle diameter is an indicator of the particle size variation of the pulverized product.

膠狀化合物之種類無特別限制。膠狀化合物可舉例如膠狀矽化合物。以下舉膠狀化合物為膠狀矽化合物之情況為例來說明,惟不受此限。The type of gel compound is not particularly limited. The colloidal compound may, for example, be a colloidal silicon compound. In the following, the case where the colloidal compound is a colloidal silicon compound is taken as an example for illustration, but it is not limited thereto.

上述交聯鍵例如為矽氧烷鍵。矽氧烷鍵可舉例如以下所示之T2鍵、T3鍵、T4鍵。空隙層(低折射率層)具有矽氧烷鍵時,可具有其中任一種鍵,可具有其中任二種鍵,亦可具有全部三種鍵。矽氧烷鍵中,T2及T3之比率愈多,愈富可撓性,愈可期待凝膠本來之特性。另一方面,T4之比率愈多愈容易展現膜強度。因此,宜因應目的、用途、所期望之特性等來變更T2、T3及T4之比率。The aforementioned crosslinks are, for example, siloxane bonds. Examples of the siloxane bond include T2 bond, T3 bond, and T4 bond shown below. When the void layer (low refractive index layer) has siloxane bonds, it may have any one of them, may have any two of them, or may have all three kinds of bonds. Among the siloxane bonds, the higher the ratio of T2 and T3, the more flexible and the more you can expect the original characteristics of the gel. On the other hand, the greater the ratio of T4, the easier it is to exhibit film strength. Therefore, it is appropriate to change the ratios of T2, T3, and T4 according to the purpose, application, desired characteristics, and the like.

[化學式1]

Figure 02_image001
[chemical formula 1]
Figure 02_image001

又,低折射率層(空隙層)中例如以所含矽原子呈矽氧烷鍵結為佳。舉具體例來說,空隙層所含全部矽原子中,未鍵結之矽原子(亦即殘留矽烷醇)之比率例如小於50%,宜為30%以下,較宜為15%以下。In addition, it is preferable that silicon atoms contained in the low-refractive index layer (void layer) are bonded by siloxane, for example. To give a specific example, the proportion of unbonded silicon atoms (ie residual silanol) among all silicon atoms contained in the void layer is less than 50%, preferably less than 30%, more preferably less than 15%.

膠狀化合物為膠狀矽化合物時,單體的矽化合物無特別限制。單體的矽化合物可舉例如下述式(1)所示之化合物。當膠狀矽化合物如上述為單體的矽化合物彼此氫鍵結或以分子間力鍵結而成之膠化物時,式(1)之單體間例如可透過各自之羥基來氫鍵結。When the colloidal compound is a colloidal silicon compound, the monomeric silicon compound is not particularly limited. The silicon compound of the monomer may be, for example, a compound represented by the following formula (1). When the colloidal silicon compound is a gel formed by hydrogen bonding or intermolecular bonding of silicon compounds such as the above-mentioned monomers, the monomers of formula (1) can be hydrogen bonded through their respective hydroxyl groups, for example.

[化學式2]

Figure 02_image003
[chemical formula 2]
Figure 02_image003

式(1)中,X例如為2、3或4,宜為3或4。R 1例如為直鏈或支鏈烷基。R 1之碳數例如為1~6,宜為1~4,較宜為1~2。直鏈烷基可舉例如甲基、乙基、丙基、丁基、戊基、己基等,支鏈烷基可舉例如異丙基、異丁基等。 In formula (1), X is, for example, 2, 3 or 4, preferably 3 or 4. R 1 is, for example, straight-chain or branched-chain alkyl. The carbon number of R 1 is, for example, 1-6, preferably 1-4, more preferably 1-2. Examples of straight-chain alkyl groups include methyl, ethyl, propyl, butyl, pentyl, and hexyl, and examples of branched-chain alkyl groups include isopropyl and isobutyl.

式(1)所示矽化合物之具體例可舉例如X為3之下述式(1’)所示之化合物。下述式(1’)中,R 1與式(1)之情況相同,例如為甲基。R 1為甲基時,矽化合物為參(羥)甲基矽烷。X為3時,矽化合物例如為具有3個官能基之3官能矽烷。 Specific examples of the silicon compound represented by the formula (1) include compounds represented by the following formula (1′) in which X is 3. In the following formula (1'), R 1 is the same as that of the formula (1), for example, a methyl group. When R 1 is a methyl group, the silicon compound is para(hydroxy)methylsilane. When X is 3, the silicon compound is, for example, a trifunctional silane having three functional groups.

[化學式3]

Figure 02_image005
[chemical formula 3]
Figure 02_image005

式(1)所示矽化合物之另一具體例可舉X為4之化合物。此時,矽化合物例如為具有4個官能基之4官能矽烷。Another specific example of the silicon compound represented by the formula (1) is a compound in which X is 4. In this case, the silicon compound is, for example, tetrafunctional silane having four functional groups.

單體的矽化合物亦可為例如矽化合物前驅物之水解物。作為矽化合物前驅物例如若為可藉由水解生成矽化合物者即可,具體例可舉下述式(2)所示之化合物。The monomeric silicon compound can also be, for example, a hydrolyzate of a silicon compound precursor. As the silicon compound precursor, for example, any silicon compound can be generated by hydrolysis, and specific examples include compounds represented by the following formula (2).

[化學式4]

Figure 02_image007
[chemical formula 4]
Figure 02_image007

前述式(2)中,X例如為2、3或4, R 1及R 2分別獨立為直鏈烷基或支鏈烷基, R 1及R 2可分別相同亦可互異, X為2時,R 1可彼此相同亦可互異, R 2可彼此相同亦可互異。 In the aforementioned formula (2), X is, for example, 2, 3 or 4, R 1 and R 2 are each independently a straight-chain alkyl group or a branched-chain alkyl group, R 1 and R 2 can be the same or different, and X is 2 , R 1 may be the same or different from each other, and R 2 may be the same or different from each other.

X及R 1例如與式(1)中之X及R 1相同。R 2可援引例如式(1)中之R 1之例示。 X and R 1 are, for example, the same as X and R 1 in formula (1). R 2 can be exemplified, for example, by citing R 1 in formula (1).

式(2)所示矽化合物前驅物之具體例可舉例如X為3之下述式(2’)所示化合物。下述式(2’)中,R 1及R 2分別與式(2)之情況相同。R 1及R 2為甲基時,矽化合物前驅物為三甲氧基(甲基)矽烷(以下亦稱作「MTMS」)。 Specific examples of the precursor of the silicon compound represented by the formula (2) include compounds represented by the following formula (2′) in which X is 3. In the following formula (2'), R 1 and R 2 are the same as those in formula (2). When R 1 and R 2 are methyl groups, the silicon compound precursor is trimethoxy(methyl)silane (hereinafter also referred to as "MTMS").

[化學式5]

Figure 02_image009
[chemical formula 5]
Figure 02_image009

單體的矽化合物例如由低折射率性優異之觀點來看,宜為3官能矽烷。又,單體的矽化合物例如由強度(例如耐擦傷性)優異之觀點來看,宜為4官能矽烷。單體的矽化合物可僅使用一種,亦可併用二種以上。例如,單體的矽化合物可僅包含3官能矽烷,可僅包含4官能矽烷,可包含3官能矽烷與4官能矽烷兩者,亦可更包含其他矽化合物。使用二種以上矽化合物作為單體的矽化合物時,其比率無特別限制可適當設定。The silicon compound of the monomer is preferably a trifunctional silane, for example, from the viewpoint of excellent low refractive index properties. Moreover, the silicon compound of the monomer is preferably a tetrafunctional silane, for example, from the viewpoint of being excellent in strength (for example, scratch resistance). A single silicon compound may be used alone, or two or more types may be used in combination. For example, the monomeric silicon compound may only contain trifunctional silanes, may only contain tetrafunctional silanes, may contain both trifunctional silanes and tetrafunctional silanes, and may further contain other silicon compounds. When two or more silicon compounds are used as a single silicon compound, the ratio thereof is not particularly limited and can be appropriately set.

以下,就所述低折射率層之形成方法之一例進行說明。Hereinafter, an example of the formation method of the said low-refractive-index layer is demonstrated.

該方法代表上包含以下步驟:前驅物形成步驟,係於樹脂薄膜上形成屬低折射率層(空隙層)之前驅物的空隙結構;及,交聯反應步驟,係於前驅物形成步驟後在該前驅物內部引發交聯反應。該方法更包含以下步驟:含有液製作步驟,係製作含微細孔粒子之含有液(以下有時稱為「微細孔粒子含有液」或僅稱為「含有液」);及,乾燥步驟,係使該含有液乾燥;並且前驅物形成步驟中,係使乾燥體中之微細孔粒子彼此化學鍵結而形成前驅物。含有液無特別限定,例如為含微細孔粒子之懸浮液。此外,以下主要針對微細孔粒子為膠狀化合物的粉碎物且空隙層包含膠狀化合物的粉碎物之多孔體(宜為聚矽氧多孔體)之情形予以說明。惟,低折射率層在微細孔粒子為膠狀化合物的粉碎物以外之情況時仍可以相同方式形成。The method typically includes the following steps: a precursor forming step, which is to form a void structure of the precursor on the resin film, which is a low refractive index layer (void layer); and, a cross-linking reaction step, which is formed after the precursor forming step. The precursor internally initiates a crosslinking reaction. The method further comprises the following steps: a containing liquid preparation step, which is to prepare a containing liquid containing micropore particles (hereinafter sometimes referred to as "fine pore particle containing liquid" or simply "containing liquid"); and, a drying step, which is The containing liquid is dried; and in the precursor forming step, the microporous particles in the dried body are chemically bonded to form a precursor. The containing liquid is not particularly limited, and is, for example, a suspension containing micropore particles. In addition, the following description will mainly focus on the case where the micropore particles are pulverized colloidal compounds and the porous body (preferably polysiloxane porous body) contains pulverized colloidal compounds. However, the low-refractive index layer can be formed in the same manner even when the microporous particles are not pulverized colloidal compounds.

根據上述方法,形成例如具有非常低之折射率的低折射率層(空隙層)。其理由例如推測如下。惟,低折射率層之形成方法不受該推測所限。According to the method described above, for example, a low-refractive-index layer (void layer) having a very low refractive index is formed. The reason for this is presumed, for example, as follows. However, the method of forming the low-refractive index layer is not limited by this speculation.

上述粉碎物係將膠狀矽化合物粉碎所得者,故粉碎前之膠狀矽化合物之三維結構係呈分散成三維基本結構之狀態。並且,在上述方法中,係藉由將膠狀矽化合物之破碎物塗敷於樹脂薄膜上,而形成以三維基本結構為主體的多孔性結構之前驅物。亦即,根據上述方法,會形成一種與膠狀矽化合物之三維結構不同而藉由塗敷粉碎物而形成之新的多孔結構(三維基本結構)。因此,最後所得之空隙層可實現例如可發揮與空氣層相同程度功能之低折射率。並且,上述方法中為了使碎物彼此化學鍵結,三維基本結構會被固定化。因此,即便最後所得之空隙層為具有空隙之結構,仍可維持充分之強度與可撓性。The above pulverized product is obtained by pulverizing the colloidal silicon compound, so the three-dimensional structure of the colloidal silicon compound before pulverization is in a state of being dispersed into a three-dimensional basic structure. Furthermore, in the above-mentioned method, a precursor of a porous structure mainly composed of a three-dimensional basic structure is formed by applying a crushed colloidal silicon compound on a resin film. That is, according to the above-mentioned method, a new porous structure (three-dimensional basic structure) formed by coating the pulverized material is formed, which is different from the three-dimensional structure of the colloidal silicon compound. Therefore, the resulting void layer can realize, for example, a low refractive index that can function to the same extent as an air layer. In addition, in the above method, the three-dimensional basic structure is immobilized in order to chemically bond the fragments. Therefore, even if the finally obtained void layer has a structure with voids, sufficient strength and flexibility can still be maintained.

並且,上述方法係將上述前驅物形成步驟與上述交聯反應步驟作為不同步驟來進行。並且,宜多階段進行交聯反應步驟。藉由多階段進行交聯反應步驟,例如可較以1階段進行交聯反應步驟更能提升前驅物之強度,而可獲得兼顧高空隙率與強度之低折射率層。該機制尚不明瞭,惟例如推測如下。亦即,如上述,若在形成空隙層之同時利用觸媒等提升膜強度,雖藉由進行觸媒反應能提升膜強度,但確有空隙率降低之問題。推測其原因例如在於:藉由利用觸媒進行微細孔粒子彼此之交聯反應,微細孔粒子彼此之交聯(化學性鍵結)之數量會增加,藉此鍵結會變牢固,但空隙層整體會凝聚而使空隙率降低。相對於此,吾等認為藉由將前驅物形成步驟與交聯反應步驟作為不同步驟來進行且多階段進行交聯反應步驟,例如可使交聯(化學性鍵結)之數量增加而幾乎不會使前驅物整體之形態產生變化(例如幾乎不引起整體之凝聚)。惟,該等為可推測之機制之一例,低折射率層之形成方法不受此限。In addition, the above-mentioned method is performed by performing the above-mentioned precursor forming step and the above-mentioned cross-linking reaction step as different steps. Also, it is preferable to carry out the cross-linking reaction step in multiple stages. By carrying out the cross-linking reaction step in multiple stages, for example, the strength of the precursor can be improved more than the cross-linking reaction step in one stage, and a low-refractive index layer with both high porosity and strength can be obtained. The mechanism is not yet clear, but it is speculated as follows, for example. That is, as mentioned above, if the film strength is increased by using a catalyst or the like while forming the void layer, although the film strength can be improved by carrying out the catalytic reaction, there is a problem that the porosity decreases. It is speculated that the reason for this is, for example, that by using a catalyst to carry out the crosslinking reaction between the micropore particles, the number of crosslinks (chemical bonds) between the micropore particles will increase, thereby making the bond stronger, but the void layer The whole will aggregate to reduce the porosity. In contrast, we think that by performing the step of forming the precursor and the step of the cross-linking reaction as different steps and performing the step of the cross-linking reaction in multiple stages, for example, the number of cross-links (chemical bonds) can be increased with little It will change the overall shape of the precursor (for example, it will hardly cause the overall condensation). However, these are examples of inferred mechanisms, and the method of forming the low-refractive index layer is not limited thereto.

前驅物形成步驟中,例如係使具有一定形狀之粒子積層來形成空隙層之前驅物。在該時間點之前驅物的強度非常弱。之後,例如藉由光或熱活性觸媒反應來產生可使微細孔粒子彼此化學鍵結之產物(例如由光鹼產生劑產生之強鹼觸媒等)(交聯反應步驟的第1階段)。吾等認為為了有效率且短時間進行反應而進一步進行加熱熟化(交聯反應步驟的第2階段),可更促進微細孔粒子彼此之化學性鍵結(交聯反應)之進行而提升強度。例如在微細孔粒子為矽化合物之微細孔粒子(例如膠狀二氧化矽化合物之粉碎體)、且前驅物中存在殘留矽烷醇基(Si-OH基)時,殘留矽烷醇基彼此會透過交聯反應而化學鍵結。惟,該說明亦為例示,低折射率層之形成方法不受此限。In the step of forming a precursor, for example, particles having a certain shape are laminated to form a precursor of a void layer. Prior to this time point the intensity of the flood was very weak. Afterwards, a product that can chemically bond the microporous particles to each other (for example, a strong base catalyst produced by a photobase generator, etc.) is generated by, for example, photo- or thermally active catalyst reaction (the first stage of the cross-linking reaction step). We believe that further heating and aging (the second stage of the crosslinking reaction step) for efficient and short-term reaction can further promote the chemical bonding of microporous particles (crosslinking reaction) to improve the strength. For example, when the microporous particles are microporous particles of silicon compounds (such as pulverized colloidal silicon dioxide compounds), and there are residual silanol groups (Si-OH groups) in the precursor, the residual silanol groups will communicate with each other. chemical bond through reaction. However, this description is also an example, and the method of forming the low-refractive index layer is not limited thereto.

上述方法具有製作含微細孔粒子之含有液之含有液製作步驟。微細孔粒子為膠狀化合物之粉碎物時,粉碎物例如可將膠狀化合物粉碎而得。如上述,藉由粉碎膠狀化合物,膠狀化合物之三維結構會被破壞,分散成三維基本結構。調製粉碎物之一例如以下所述。The above-mentioned method has a containing liquid preparation step of preparing a containing liquid containing micropore particles. When the microporous particles are pulverized colloidal compounds, the pulverized products can be obtained by pulverizing the colloidal compounds, for example. As mentioned above, by pulverizing the colloidal compound, the three-dimensional structure of the colloidal compound is destroyed and dispersed into a three-dimensional basic structure. One of the prepared pulverized products is as follows, for example.

單體化合物之膠化例如可使單體化合物彼此氫鍵結或行分子間力鍵結來進行。單體化合物可舉例如上述式(1)所示之矽化合物。式(1)之矽化合物具有羥基,故式(1)之單體間可透過這些羥基進行氫鍵結或分子間力鍵結。The gelation of monomeric compounds can be performed, for example, by hydrogen bonding or intermolecular force bonding between monomeric compounds. The monomer compound may, for example, be a silicon compound represented by the above formula (1). The silicon compound of formula (1) has hydroxyl groups, so the monomers of formula (1) can undergo hydrogen bonding or intermolecular bonding through these hydroxyl groups.

或者,矽化合物亦可為上述矽化合物前驅物之水解物,例如亦可將上述式(2)所示矽化合物前驅物予以水解來生成。Alternatively, the silicon compound may also be a hydrolyzate of the above-mentioned silicon compound precursor, for example, it may also be produced by hydrolyzing the silicon compound precursor represented by the above formula (2).

單體化合物前驅物之水解方法無特別限制,例如可在觸媒存在下藉由化學反應來進行。觸媒可舉例如草酸、乙酸等之酸等。水解反應例如可藉由在室溫環境下將草酸水溶液緩慢地滴下至矽化合物與二甲亞碸溶液之混合液(例如懸浮液)混合後,直接攪拌30分鐘左右來進行。在水解矽化合物前驅物時,例如可藉由將矽化合物前驅物之烷氧基完全水解,以更有效率地進行其後之膠化、熟成、空隙結構形成後之加熱及固定化。The method for hydrolyzing the precursor of the monomer compound is not particularly limited, for example, it can be carried out by chemical reaction in the presence of a catalyst. Examples of the catalyst include acids such as oxalic acid and acetic acid. The hydrolysis reaction can be carried out, for example, by slowly dropping an oxalic acid aqueous solution at room temperature until the mixture (such as a suspension) of the silicon compound and dimethylsulfone solution is mixed, and then directly stirring for about 30 minutes. When the silicon compound precursor is hydrolyzed, for example, the alkoxy groups of the silicon compound precursor can be completely hydrolyzed, so that the subsequent gelation, aging, heating and immobilization after the formation of the void structure can be performed more efficiently.

單體化合物之膠化例如可藉由單體間之脫水縮合反應來進行。脫水縮合反應例如宜在觸媒存在下進行,觸媒可舉例如酸觸媒及鹼性觸媒等脫水縮合觸媒,前述酸觸媒有鹽酸、草酸、硫酸等,前述鹼性觸媒有氨、氫氧化鉀、氫氧化鈉、氫氧化銨等。脫水縮合觸媒以鹼性觸媒為佳。脫水縮合反應中,觸媒對單體化合物之添加量無特別限制。觸媒例如相對於單體化合物1莫耳宜可添加0.1莫耳~10莫耳、較宜可添加0.05莫耳~7莫耳、更宜可添加0.1莫耳~5莫耳。The gelation of monomeric compounds can be performed, for example, by dehydration condensation reaction between monomers. The dehydration condensation reaction, for example, should be carried out in the presence of a catalyst, and the catalyst can include dehydration condensation catalysts such as acid catalysts and alkaline catalysts. The aforementioned acid catalysts include hydrochloric acid, oxalic acid, sulfuric acid, etc., and the aforementioned alkaline catalysts include ammonia , potassium hydroxide, sodium hydroxide, ammonium hydroxide, etc. The dehydration condensation catalyst is preferably an alkaline catalyst. In the dehydration condensation reaction, the addition amount of the catalyst to the monomer compound is not particularly limited. For example, the catalyst can be added in 0.1-10 mol, more preferably in 0.05-7 mol, more preferably in 0.1-5 mol relative to 1 mol of the monomer compound.

單體化合物之膠化例如宜在溶劑中進行。單體化合物相對於溶劑之比率無特別限制。溶劑可舉例如二甲亞碸(DMSO)、N-甲基吡咯啶酮(NMP)、N,N-二甲基乙醯胺(DMAc)、二甲基甲醯胺(DMF)、γ-丁內酯(GBL)、乙腈(MeCN)、乙二醇乙基醚(EGEE)等。溶劑可單獨使用亦可併用2種以上。以下亦將膠化所使用之溶劑稱作「膠化用溶劑」。The gelling of monomeric compounds is preferably carried out in a solvent, for example. The ratio of the monomer compound to the solvent is not particularly limited. Solvents can be, for example, dimethylsulfide (DMSO), N-methylpyrrolidone (NMP), N,N-dimethylacetamide (DMAc), dimethylformamide (DMF), γ-butylene Lactone (GBL), acetonitrile (MeCN), ethylene glycol ethyl ether (EGEE), etc. A solvent may be used individually or in combination of 2 or more types. Hereinafter, the solvent used for gelation is also referred to as "solvent for gelation".

膠化之條件無特別限制。對含單體化合物之溶劑的處理溫度例如為20℃~30℃,宜為22℃~28℃,較宜為24℃~26℃。處理時間例如為1分鐘~60分鐘,宜為5分鐘~40分鐘,較宜為10分鐘~30分鐘。進行脫水縮合反應時,其處理條件無特別限制,可援引該等例示。藉由進行膠化,例如矽氧烷鍵會成長而形成二氧化矽一次粒子,並藉由進行反應,一次粒子彼此會連接成串珠狀,生成三維結構之凝膠。The conditions of gelation are not particularly limited. The temperature for treating the solvent containing the monomer compound is, for example, 20°C-30°C, preferably 22°C-28°C, more preferably 24°C-26°C. The treatment time is, for example, 1 minute to 60 minutes, preferably 5 minutes to 40 minutes, more preferably 10 minutes to 30 minutes. When the dehydration condensation reaction is performed, the treatment conditions are not particularly limited, and such examples can be cited. Through the gelation, for example, siloxane bonds grow to form primary silica particles, and through the reaction, the primary particles are connected to each other to form a beaded form, forming a three-dimensional gel.

藉由膠化所得之膠狀化合物宜於膠化反應後施行熟成處理。藉由熟成處理,例如可使膠化所得之具有三維結構之凝膠的一次粒子進一步成長而增大粒子本身的尺寸,結果可使粒子彼此接觸之頸鏈(neck)部分的接觸狀態從點接觸變成面接觸(增加接觸面積)。進行熟成處理後之凝膠例如凝膠本身之強度會增加,結果可提升進行粉碎後之三維基本結構之強度。藉此,例如在塗敷粉碎物後之乾燥步驟中,可抑制三維基本結構堆積而成之空隙結構的細孔尺寸隨著乾燥過程之溶劑揮發而收縮。The jelly compound obtained by gelation is suitable for ripening after the gelation reaction. Through the aging treatment, for example, the primary particles of the gel with a three-dimensional structure obtained by gelation can be further grown to increase the size of the particles themselves. As a result, the contact state of the neck chain (neck) portion where the particles contact each other can be changed from point contact Become surface contact (increase contact area). The strength of the gel after aging treatment, such as the gel itself, will increase, and as a result, the strength of the three-dimensional basic structure after pulverization can be improved. Thereby, for example, in the drying step after coating the pulverized product, the shrinkage of the pore size of the void structure in which the three-dimensional basic structure is accumulated can be suppressed as the solvent evaporates during the drying process.

熟成處理例如可在預定溫度下將膠狀化合物培育預定時間來進行。熟成溫度例如為30℃以上,宜為35℃以上,較宜為40℃以上。另一方面,熟成溫度例如為80℃以下,宜為75℃以下,較宜為70℃以下。熟成溫度之範圍例如為30℃~80℃,宜為35℃~75℃,較宜為40℃~70℃。熟成時間例如為5小時以上,宜為10小時以上,較宜為15小時以上。另一方面,熟成時間例如50小時以下,宜為40小時以下,較宜為30小時以下。熟成時間之範圍例如為5小時~50小時,宜為10小時~40小時,較宜為15小時~30小時。此外,關於熟成條件,例如可為了使二氧化矽一次粒子尺寸增大及頸部之接觸面積增大而進行最佳化。並且,宜考慮所採用之溶劑的沸點,例如熟成溫度若過高,溶劑可能會過度揮發,而因塗敷液(凝膠液)濃度之濃縮發生三維空隙結構之細孔閉口等不良狀況。另一方面,例如當熟成溫度過低時,不僅無法充分獲得藉由熟成所帶來之效果,量產製程之歷時的溫度參差還會增大,而可能製出特性差之低折射率層。The aging treatment can be performed, for example, by incubating the jelly compound at a predetermined temperature for a predetermined time. The aging temperature is, for example, above 30°C, preferably above 35°C, more preferably above 40°C. On the other hand, the aging temperature is, for example, below 80°C, preferably below 75°C, more preferably below 70°C. The aging temperature ranges, for example, from 30°C to 80°C, preferably from 35°C to 75°C, more preferably from 40°C to 70°C. The aging time is, for example, 5 hours or more, preferably 10 hours or more, more preferably 15 hours or more. On the other hand, the aging time is, for example, less than 50 hours, preferably less than 40 hours, more preferably less than 30 hours. The aging time ranges, for example, from 5 hours to 50 hours, preferably from 10 hours to 40 hours, more preferably from 15 hours to 30 hours. In addition, the aging conditions can be optimized for increasing the size of the primary silica particles and increasing the contact area of the neck, for example. In addition, the boiling point of the solvent used should be considered. For example, if the curing temperature is too high, the solvent may volatilize excessively, and the three-dimensional void structure will cause pores to close due to the concentration of the coating liquid (gel liquid) concentration. On the other hand, for example, when the curing temperature is too low, not only the effect brought by the curing cannot be fully obtained, but also the temperature variation during the mass production process will increase, and a low-refractive index layer with poor characteristics may be produced.

熟成處理例如可使用與膠化處理相同之溶劑。具體上宜對凝膠處理後之反應物(亦即,含膠狀化合物之溶劑)直接實施熟成處理。結束膠化後之熟成處理的凝膠(膠狀化合物、例如膠狀矽化合物)所含之殘留矽烷醇基的莫耳數例如為50%以下,宜為40%以下,較宜為30%以下。另一方面,殘留矽烷醇基的莫耳數例如為1%以上,宜為3%以上,較宜為5%以上。殘留矽烷醇基的莫耳數的範圍例如為1%~50%,宜為3%~40%,較宜為5%~30%。為了提高凝膠硬度,例如殘留矽烷醇基的莫耳數愈低愈佳。矽烷醇基之莫耳數若過高,例如可能無法將空隙結構維持到聚矽氧多孔體之前驅物進行交聯。另一方面,矽烷醇基的莫耳數若過低,例如在製作微細孔粒子含有液(例如懸浮液)之步驟及/或後續之步驟中,膠狀化合物之粉碎物可能無法交聯而無法賦予充分之膜強度。此外,殘留矽烷醇基的莫耳數例如為令原材料(例如單體化合物前驅物)的烷氧基的莫耳數為100時之殘留矽烷醇基的比率。此外,上述為矽烷醇基之例,而例如在單體的矽化合物經以各種反應性官能基改質過時,亦可對各官能基應用相同事項及條件等。For the aging treatment, for example, the same solvent as the gelling treatment can be used. Specifically, it is preferable to directly perform aging treatment on the reactant after the gel treatment (that is, the solvent containing the gel-like compound). The number of moles of residual silanol groups contained in the cured gel (colloidal compound, such as colloidal silicon compound) after gelatinization is, for example, 50% or less, preferably 40% or less, more preferably 30% or less . On the other hand, the molar number of residual silanol groups is, for example, 1% or more, preferably 3% or more, more preferably 5% or more. The molar number of the residual silanol groups ranges, for example, from 1% to 50%, preferably from 3% to 40%, more preferably from 5% to 30%. In order to improve gel hardness, for example, the lower the molar number of residual silanol groups, the better. If the molar number of silanol groups is too high, for example, the void structure may not be maintained until the precursor of the polysiloxane porous body is cross-linked. On the other hand, if the molar number of silanol groups is too low, for example, in the step of making a microporous particle-containing liquid (such as a suspension) and/or subsequent steps, the pulverized colloidal compound may not be able to cross-link and cannot Give sufficient film strength. In addition, the molar number of the remaining silanol groups is, for example, the ratio of the remaining silanol groups when the molar number of the alkoxy groups of the raw material (for example, monomer compound precursor) is 100. In addition, the above is an example of a silanol group, and for example, when a monomeric silicon compound is modified with various reactive functional groups, the same matters and conditions can also be applied to each functional group.

將單體化合物在膠化用溶劑中膠化後,將所得膠狀化合物粉碎。粉碎例如可對膠化用溶劑中之膠狀化合物直接施行粉碎處理,亦可將膠化用溶劑取代成其他溶劑後對該其他溶劑中之膠狀化合物施行粉碎處理。又,例如因在膠化反應中所用之觸媒及所用之溶劑至熟成步驟後仍有剩餘,而造成液體歷時性膠化(使用期限)、乾燥步驟時之乾燥效率降低時,宜取代成其他溶劑。以下,上述其他溶劑亦稱為「粉碎用溶劑」。After the monomer compound is gelled in a solvent for gelling, the resulting gel-like compound is pulverized. For the pulverization, for example, the colloidal compound in the gelling solvent may be directly pulverized, or the colloidal compound in another solvent may be substituted for the gelling solvent and pulverized. Also, for example, when the catalyst and the solvent used in the gelation reaction are still left after the aging step, which causes the liquid to gel over time (use life), and the drying efficiency in the drying step is reduced, it should be replaced by other solvent. Hereinafter, the above-mentioned other solvents are also referred to as "solvent for pulverization".

粉碎用溶劑無特別限制,例如可使用有機溶劑。有機溶劑可舉例如沸點在130℃以下、宜為100℃以下、較宜為85℃以下之溶劑。具體例可舉異丙醇(IPA)、乙醇、甲醇、丁醇、丙二醇單甲基醚(PGME)、甲賽璐蘇、丙酮、二甲基甲醯胺(DMF)、異丁醇等。粉碎用溶劑可單獨使用亦可併用2種以上。The solvent for pulverization is not particularly limited, and for example, an organic solvent can be used. The organic solvent can be, for example, a solvent with a boiling point below 130°C, preferably below 100°C, more preferably below 85°C. Specific examples include isopropanol (IPA), ethanol, methanol, butanol, propylene glycol monomethyl ether (PGME), methylcellulus, acetone, dimethylformamide (DMF), and isobutanol. The pulverizing solvent may be used alone or in combination of two or more.

膠化用溶劑與粉碎用溶劑之組合無特別限制,可舉例如DMSO與IPA、DMSO與乙醇、DMSO與甲醇、DMSO與丁醇、DMSO與異丁醇之組合等。如所述,藉由將膠化用溶劑取代成破碎用溶劑,例如可在後述之塗膜形成中形成更均勻之塗敷膜。The combination of the gelling solvent and the pulverizing solvent is not particularly limited, and examples thereof include combinations of DMSO and IPA, DMSO and ethanol, DMSO and methanol, DMSO and butanol, and DMSO and isobutanol. As described above, by substituting the solvent for gelling with the solvent for crushing, for example, a more uniform coating film can be formed in the coating film formation described later.

膠狀化合物之粉碎方法無特別限制,例如可藉由以下裝置來進行:超音波均質機、高速旋轉均質機、其他利用空蝕現象之粉碎裝置。珠磨機等進行介質粉碎之裝置例如係於粉碎時以物理性手段破壞凝膠之空隙結構者,與之相對地,例如均質機等之空蝕方式粉碎裝置為無介質方式,故是以高速的剪切力剝離業已內包在凝膠三維結構中之鍵結較弱的二氧化矽粒子接合面。藉此,所得凝膠三維結構可維持具有一定範圍之粒度分布的空隙結構,而可藉由塗敷、乾燥時之堆積再形成空隙結構。粉碎條件無特別限制,例如宜可藉由瞬間賦予高速的流動,以不使溶劑揮發之方式粉碎凝膠。例如,宜粉碎成如上述之粒度參差(例如體積平均粒徑或粒度分布)的粉碎物。假設當粉碎時間、強度等作業量不足時,例如會殘留粗粒,而不僅無法形成緻密之細孔,還會增加外觀缺陷而可能無法獲得高品質。另一方面,當作業量過多時,例如會形成比所期望之粒度分布更微細之粒子,使塗敷、乾燥後堆積而成之空隙尺寸變微細,而可能無法獲得所期望之空隙率。The pulverization method of the colloidal compound is not particularly limited, for example, it can be carried out by the following devices: ultrasonic homogenizer, high-speed rotary homogenizer, and other pulverization devices utilizing cavitation phenomenon. Devices that perform media crushing such as bead mills, for example, destroy the pore structure of the gel by physical means during crushing. In contrast, the cavitation crushing devices such as homogenizers are media-free, so they use high-speed The shear force peels off the weakly bonded silica particle interface already embedded in the three-dimensional structure of the gel. In this way, the three-dimensional structure of the obtained gel can maintain a void structure with a certain range of particle size distribution, and the void structure can be formed again by stacking during coating and drying. The pulverization conditions are not particularly limited. For example, it is preferable to pulverize the gel without volatilizing the solvent by instantaneously imparting a high-speed flow. For example, it is preferable to pulverize into a pulverized product having a variable particle size (for example, volume average particle diameter or particle size distribution) as described above. Assuming that when the amount of work such as crushing time and intensity is insufficient, for example, coarse particles will remain, which will not only fail to form dense pores, but also increase appearance defects and may not be able to obtain high quality. On the other hand, when the amount of work is too much, for example, particles with a finer particle size distribution than expected will be formed, and the size of voids accumulated after coating and drying will become finer, and the desired porosity may not be obtained.

依上述方式可製作含微細孔粒子(膠狀化合物之粉碎物)之液體(例如懸浮液)。並且,於製出含微細孔粒子之液體後或是在製作步驟中,藉由添加可使微細孔粒子彼此化學鍵結之觸媒,可製作含微細孔粒子及觸媒之含有液。觸媒亦可為例如促進微細孔粒子彼此之交聯鍵結的觸媒。使微細孔粒子彼此化學鍵結之化學反應,宜利用二氧化矽溶膠分子中所含之殘留矽烷醇基的脫水縮合反應。藉由觸媒促進矽烷醇基之羥基彼此的反應,可達成在短時間內使空隙結構硬化之連續成膜。觸媒可舉例如光活性觸媒及熱活性觸媒。藉由光活性觸媒,例如在前驅物形成步驟中不用加熱便可使微細孔粒子彼此化學鍵結(例如交聯鍵結)。藉此,例如在前驅物形成步驟中便不易引發前驅物整體之收縮,故可維持更高之空隙率。又,除了觸媒外還可使用可產生觸媒之物質(觸媒產生劑),或乾脆取而代之。例如,除了光活性觸媒外還可使用藉由光產生觸媒之物質(光觸媒產生劑),或乾脆取而代之;又除了熱活性觸媒外還可使用藉由熱產生觸媒之物質(熱觸媒產生劑),或乾脆取而代之。光觸媒產生劑可舉例如光鹼產生劑(藉由光照射產生鹼性觸媒之物質)、光酸產生劑(藉由光照射產生酸性觸媒之物質)等,宜為光鹼產生劑。光鹼產生劑可列舉例如:9-蒽基甲基 N,N-二乙基胺甲酸酯(9-anthrylmethyl N,N-diethylcarbamate,商品名WPBG-018)、(E)-1-[3-(2-羥基苯基)-2-丙烯醯基]哌啶((E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine,商品名WPBG-027)、1-(蒽醌-2-基)乙基 咪唑羧酸酯(1-(anthraquinon-2-yl)ethyl imidazolecarboxylate,商品名WPBG-140)、2-硝基苯基甲基 4-甲基丙醯氧基哌啶-1-羧酸酯(商品名WPBG-165)、1,2-二異丙基-3-[雙(二甲基胺基)亞甲基]鈲 2-(3-苯甲醯基苯基)丙酸酯(商品名WPBG-266)、1,2-二環己基-4,4,5,5-四甲基雙鈲 正丁基三苯基硼酸酯(商品名WPBG-300)、及2-(9-側氧基𠮿

Figure 110148736-001
-2-基)丙酸1,5,7-三氮雜雙環[4.4.0]癸-5-烯(東京化成工業股份公司)、含4-哌啶甲醇之化合物(商品名HDPD-PB100:Heraeus公司製)等。此外,上述包含「WPBG」之商品名皆為和光純藥工業股份公司之商品名。光酸產生劑可舉例如芳香族鋶鹽(商品名SP-170:ADEKA公司)、三芳基鋶鹽(商品名CPI101A:San-Apro Ltd.)、芳香族錪鹽(商品名Irgacure250:Ciba Japan公司)等。又,使微細孔粒子彼此化學鍵結之觸媒不限於光活性觸媒及光觸媒產生劑,例如亦可為熱活性觸媒或脲等這類熱觸媒產生劑。使微細孔粒子彼此化學鍵結之觸媒可舉例如鹼性觸媒及酸觸媒等,前述鹼性觸媒有氫氧化鉀、氫氧化鈉、氫氧化銨等,前述酸觸媒有鹽酸、乙酸、草酸等。該等中以鹼性觸媒為宜。使微細孔粒子彼此化學鍵結之觸媒或觸媒產生劑,例如可在將要進行塗敷前才添加至含粉碎物(微細孔粒子)之溶膠粒子液(例如懸浮液)中作使用,或可作成已將觸媒或觸媒產生劑混合至溶劑中之混合液來使用。混合液例如可為:直接添加於溶膠粒子液中而溶解之塗敷液、使觸媒或觸媒產生劑溶解於溶劑中之溶液、或是使觸媒或觸媒產生劑分散於溶劑中之分散液。溶劑無特別限制,可舉例如水、緩衝液等。A liquid (such as a suspension) containing microporous particles (crushed colloidal compounds) can be produced in the above-mentioned manner. Furthermore, after preparing the liquid containing microporous particles or during the production process, by adding a catalyst capable of chemically bonding the microporous particles to each other, a liquid containing microporous particles and a catalyst can be produced. The catalyst may be, for example, a catalyst that promotes cross-linking between microporous particles. The chemical reaction to chemically bond the microporous particles to each other should utilize the dehydration condensation reaction of the residual silanol groups contained in the silica sol molecules. By promoting the reaction between the hydroxyl groups of the silanol groups through the catalyst, continuous film formation that hardens the void structure in a short period of time can be achieved. The catalyst can be, for example, a photoactive catalyst and a thermally active catalyst. With the photoactive catalyst, for example, the microporous particles can be chemically bonded (eg, cross-linked) to each other without heating in the step of forming the precursor. Thereby, for example, in the step of forming the precursor, it is not easy to cause shrinkage of the entire precursor, so a higher porosity can be maintained. Also, a substance capable of generating a catalyst (catalyst generating agent) may be used in addition to the catalyst, or may be substituted for it. For example, in addition to photoactive catalysts, substances that generate catalysts by light (photocatalyst generators) can also be used, or simply replaced; in addition to thermally active catalysts, substances that generate catalysts by heat (thermal catalysts) can also be used. mediators), or simply replace them. The photocatalyst generator can be, for example, a photobase generator (a substance that generates an alkaline catalyst by light irradiation), a photoacid generator (a substance that generates an acidic catalyst by light irradiation), etc., and is preferably a photobase generator. Photobase generators can include, for example: 9-anthrylmethyl N, N-diethylcarbamate (9-anthrylmethyl N, N-diethylcarbamate, trade name WPBG-018), (E)-1-[3 -(2-Hydroxyphenyl)-2-acryloyl]piperidine ((E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine, trade name WPBG-027), 1-(anthracene Quinone-2-yl)ethyl imidazolecarboxylate (1-(anthraquinon-2-yl)ethyl imidazolecarboxylate, trade name WPBG-140), 2-nitrophenylmethyl 4-methylpropionyloxypiperidine -1-carboxylate (trade name WPBG-165), 1,2-diisopropyl-3-[bis(dimethylamino)methylene]guanidinium 2-(3-benzoylphenyl ) propionate (trade name WPBG-266), 1,2-dicyclohexyl-4,4,5,5-tetramethylbis-butanyl triphenyl borate (trade name WPBG-300), and 2-(9-oxo 𠮿
Figure 110148736-001
-2-yl)propionic acid 1,5,7-triazabicyclo[4.4.0]dec-5-ene (Tokyo Chemical Industry Co., Ltd.), a compound containing 4-piperidinemethanol (trade name HDPD-PB100: Heraeus company), etc. In addition, the above-mentioned trade names including "WPBG" are all trade names of Wako Pure Chemical Industries, Ltd. The photoacid generators include, for example, aromatic permeic acid salts (trade name SP-170: ADEKA Corporation), triaryl permeic acid salts (trade name CPI101A: San-Apro Ltd.), aromatic iodonium salts (trade name Irgacure 250: Ciba Japan Inc. )Wait. Also, the catalyst for chemically bonding micropore particles is not limited to photoactive catalysts and photocatalyst generating agents, and may be thermally active catalysts or thermal catalyst generating agents such as urea, for example. Catalysts that chemically bond micropore particles to each other include alkaline catalysts and acid catalysts. The aforementioned alkaline catalysts include potassium hydroxide, sodium hydroxide, and ammonium hydroxide. The aforementioned acid catalysts include hydrochloric acid and acetic acid. , oxalic acid, etc. Among them, an alkaline catalyst is suitable. The catalyst or catalyst generating agent that chemically bonds the microporous particles to each other can be added to the sol particle liquid (such as a suspension) containing the pulverized material (microporous particles) just before coating, or can be used It is used as a mixed solution in which a catalyst or a catalyst generating agent has been mixed in a solvent. The mixed liquid can be, for example, a coating liquid that is directly added to the sol particle liquid and dissolved, a solution in which a catalyst or a catalyst generator is dissolved in a solvent, or a solution in which a catalyst or a catalyst generator is dispersed in a solvent. Dispersions. The solvent is not particularly limited, and examples include water, buffer, and the like.

又,例如亦可於凝膠含有液中進一步添加用以使前述凝膠之粉碎物彼此間接鍵結的交聯輔助劑。該交聯輔助劑會進入粒子(前述粉碎物)彼此之間,使粒子與交聯輔助劑各自相互作用或鍵結,讓距離上略為分開之粒子彼此也得以鍵結,而可有效率地提高強度。前述交聯輔助劑以多交聯矽烷單體為佳。前述多交聯矽烷單體具體上可具有例如2以上且3以下之烷氧矽基,且烷氧矽基間之鏈長可為碳數1以上且10以下,亦可包含碳以外之元素。前述交聯輔助劑可列舉例如:雙(三甲氧矽基)乙烷、雙(三乙氧矽基)乙烷、雙(三甲氧矽基)甲烷、雙(三乙氧矽基)甲烷、雙(三乙氧矽基)丙烷、雙(三甲氧矽基)丙烷、雙(三乙氧矽基)丁烷、雙(三甲氧矽基)丁烷、雙(三乙氧矽基)戊烷、雙(三甲氧矽基)戊烷、雙(三乙氧矽基)己烷、雙(三甲氧矽基)己烷、雙(三甲氧矽基)-N-丁基-N-丙基-乙烷-1,2-二胺、參-(3-三甲氧矽基丙基)三聚異氰酸酯、參-(3-三乙氧矽基丙基)三聚異氰酸酯等。該交聯輔助劑之添加量無特別限定,例如相對於前述矽化合物之粉碎物之重量為0.01~20重量%、0.05~15重量%或0.1~10重量%。In addition, for example, a crosslinking auxiliary agent for indirectly bonding the above-mentioned pulverized products of the gel may be further added to the gel-containing liquid. The cross-linking auxiliary agent will enter between the particles (the above-mentioned pulverized products), so that the particles and the cross-linking auxiliary agent can interact or bond each other, so that the particles that are slightly separated by distance can also be bonded to each other, and can effectively improve strength. The aforementioned crosslinking auxiliary agent is preferably a multi-crosslinking silane monomer. Specifically, the multi-crosslinked silane monomer may have, for example, 2 or more and 3 or less alkoxysilyl groups, and the chain length between the alkoxysilyl groups may be 1 or more and 10 or less, and may also contain elements other than carbon. The above-mentioned crosslinking auxiliary agent can be listed for example: bis(trimethoxysilyl)ethane, bis(triethoxysilyl)ethane, bis(trimethoxysilyl)methane, bis(triethoxysilyl)methane, bis(trimethoxysilyl)methane, bis(trimethoxysilyl)methane, bis(trimethoxysilyl)methane, (triethoxysilyl)propane, bis(trimethoxysilyl)propane, bis(triethoxysilyl)butane, bis(trimethoxysilyl)butane, bis(triethoxysilyl)pentane, Bis(trimethoxysilyl)pentane, bis(trimethoxysilyl)hexane, bis(trimethoxysilyl)hexane, bis(trimethoxysilyl)-N-butyl-N-propyl-ethyl Alkane-1,2-diamine, ginseng-(3-trimethoxysilylpropyl) isocyanate, ginseng-(3-triethoxysilylpropyl) isocyanate, etc. The addition amount of the crosslinking auxiliary agent is not particularly limited, for example, it is 0.01-20% by weight, 0.05-15% by weight or 0.1-10% by weight relative to the weight of the pulverized silicon compound.

接著,於密封部上塗敷含微細孔粒子之含有液(例如懸浮液)(塗敷步驟)。塗敷可使用例如後述之各種塗敷方式,又不受該等所限。可藉由將含微細孔粒子(例如膠狀二氧化矽化合物的粉碎物)之含有液直接塗敷於密封部上,來形成含微細孔粒子及觸媒之塗敷膜。塗敷膜例如亦可稱為塗敷層。藉由形成塗敷膜,例如三維結構被破壞之粉碎物會沉降、堆積而可建構出新的三維結構。此外,含微細孔粒子之含有液例如亦可不包含使微細孔粒子彼此化學鍵結的觸媒。例如亦可如後述,將用以使微細孔粒子彼此化學鍵結的觸媒吹附至塗敷膜後再進行前驅物形成步驟,或一邊吹附一邊進行前驅物形成步驟。惟,含微細孔粒子之含有液亦可包含用以使微細孔粒子彼此化學鍵結的觸媒,藉由塗敷膜中所含觸媒之作用使微細孔粒子彼此化學鍵結來形成多孔體之前驅物。Next, a liquid containing microporous particles (for example, a suspension) is applied on the sealing portion (coating step). For the coating, for example, various coating methods described below can be used, but are not limited thereto. A coating film containing microporous particles and a catalyst can be formed by directly coating a liquid containing microporous particles (for example, pulverized colloidal silica compound) on the sealing portion. The coating film can also be called a coating layer, for example. By forming a coating film, for example, crushed objects whose three-dimensional structure has been destroyed will settle and accumulate to construct a new three-dimensional structure. In addition, the containing liquid containing microporous particles may not contain, for example, a catalyst for chemically bonding the microporous particles. For example, as will be described later, the precursor forming step may be performed after spraying a catalyst for chemically bonding microporous particles to the coating film, or performing the precursor forming process while blowing. However, the containing solution containing micropore particles may also contain a catalyst for chemically bonding the micropore particles to each other, and the precursor of the porous body is formed by chemically bonding the micropore particles to each other through the action of the catalyst contained in the coating film. things.

上述溶劑(以下亦稱作「塗敷用溶劑」)無特別限制,例如可使用有機溶劑。有機溶劑可舉例如沸點150℃以下之溶劑。具體例可舉例如IPA、乙醇、甲醇、正丁醇、2-丁醇、異丁醇、戊醇等,又可使用與粉碎用溶劑相同之物。低折射率層之形成方法包含粉碎膠狀化合物之步驟時,在塗敷膜之形成步驟中,例如可直接使用含膠狀化合物之粉碎物的粉碎用溶劑。The above-mentioned solvent (hereinafter also referred to as "coating solvent") is not particularly limited, and for example, an organic solvent can be used. The organic solvent may, for example, have a boiling point of 150°C or lower. Specific examples include IPA, ethanol, methanol, n-butanol, 2-butanol, isobutanol, pentanol, and the like, and the same ones as the pulverization solvent can be used. When the method of forming the low-refractive index layer includes the step of pulverizing the colloidal compound, in the step of forming the coating film, for example, a pulverization solvent containing the pulverized product of the colloidal compound can be used as it is.

例如在塗敷步驟中,宜將分散在溶劑中之溶膠狀粉碎物(以下亦稱作「溶膠粒子液」)塗敷於密封部上。溶膠粒子液例如在塗敷於密封部上且乾燥後,藉由進行前述化學交聯,可連續成膜具有一定程度以上之膜強度的空隙層。此外,本發明實施形態之「溶膠」係指藉由將凝膠之三維結構粉碎,使維持有部分空隙結構的奈米三維結構之二氧化矽溶膠粒子分散在溶劑中而展現流動性之狀態。For example, in the coating step, it is preferable to apply a sol-like pulverized product dispersed in a solvent (hereinafter also referred to as "sol particle liquid") to the sealing part. The sol particle liquid, for example, is applied on the sealing part and dried, and then the above-mentioned chemical crosslinking is performed to continuously form a film of a void layer having a film strength higher than a certain level. In addition, the "sol" in the embodiment of the present invention refers to a state in which fluidity is exhibited by dispersing silica sol particles with a nanometer three-dimensional structure maintaining a partial void structure in a solvent by pulverizing the three-dimensional structure of the gel.

塗敷用溶劑中之粉碎物的濃度無特別限制,例如為0.3%(v/v)~50%(v/v),宜為0.5%(v/v)~30%(v/v),較宜為1.0%(v/v)~10%(v/v)。粉碎物之濃度若過高,例如有溶膠粒子液之流動性顯著下降而於塗敷時發生凝集物、塗痕之可能。粉碎物之濃度若過低,不僅在溶膠粒子液之溶劑的乾燥上會耗費相當程度的時間,剛乾燥後之殘留溶劑也會提高,而有空隙率降低之可能。The concentration of pulverized matter in the coating solvent is not particularly limited, for example, it is 0.3% (v/v) ~ 50% (v/v), preferably 0.5% (v/v) ~ 30% (v/v), More preferably 1.0% (v/v) ~ 10% (v/v). If the concentration of pulverized matter is too high, for example, the fluidity of the sol particle liquid will decrease significantly, and agglomerates and coating marks may occur during coating. If the concentration of the pulverized product is too low, not only will it take a considerable amount of time to dry the solvent of the sol particle liquid, but also the residual solvent immediately after drying will increase, and the porosity may decrease.

溶膠之物性無特別限制。溶膠之剪切黏度在10001/秒之剪切速度下例如為100cPa・s以下,宜為10cPa・s以下,較宜為1cPa・s以下。剪切黏度若過高,例如可能會發生塗痕而有凹版塗敷之轉印率降低等不良狀況發生。相反的,當剪切黏度過低時,例如可能無法增厚塗敷時之濕塗厚度,而無法在乾燥後獲得所期望之厚度。The physical properties of the sol are not particularly limited. The shear viscosity of the sol is, for example, less than 100 cPa·s at a shear rate of 1000 l/sec, preferably less than 10 cPa·s, more preferably less than 1 cPa·s. If the shear viscosity is too high, for example, coating marks may occur and the transfer rate of gravure coating may decrease. On the contrary, when the shear viscosity is too low, for example, it may not be possible to thicken the wet coating thickness during coating, and it may not be possible to obtain the desired thickness after drying.

粉碎物之塗敷量無特別限制,例如可因應所期望之聚矽氧多孔體(以結果而言為低折射率層)之厚度等適當設定。舉具體例來說,在形成厚度0.1µm~1000µm之聚矽氧多孔體時,粉碎物之塗敷量以塗敷面之每1m 2面積,例如為0.01µg~60000µg,宜為0.1µg~5000µg,較宜為1µg~50µg。溶膠粒子液之理想塗敷量例如與液體之濃度或塗敷方式等有關,因此很難做單義定義,惟若考慮到生產性,宜盡量塗成薄層。塗敷量若過多,例如溶劑在揮發前便在乾燥爐中乾燥之可能性會變高。如此一來,可能於奈米粉碎溶膠粒子在溶劑中沉降、堆積形成空隙結構之前溶劑便乾燥,而阻礙空隙形成,使空隙率大幅降低。另一方面,塗敷量若過薄,可能會提高發生塗敷塌凹(cissing)之風險。 The coating amount of the pulverized product is not particularly limited, and can be appropriately set in accordance with, for example, the desired thickness of the polysiloxane porous body (resulting in a low refractive index layer). To give a specific example, when forming a polysiloxane porous body with a thickness of 0.1µm~1000µm, the coating amount of the pulverized material is 0.01µg~ 60000µg per 1m2 of the coated surface, preferably 0.1µg~5000µg , preferably 1µg~50µg. The ideal application amount of the sol particle liquid is related to the concentration of the liquid or the application method, etc., so it is difficult to make a univocal definition, but considering the productivity, it is better to apply it as a thin layer as possible. If the amount of coating is too large, for example, the possibility of drying in a drying oven before the solvent volatilizes becomes high. In this way, the solvent may be dried before the nano-pulverized sol particles settle and accumulate in the solvent to form a void structure, which hinders the formation of voids and greatly reduces the void ratio. On the other hand, if the coating amount is too thin, the risk of cissing may increase.

並且,低折射率層之形成方法例如如上述具有前驅物形成步驟,該步驟係形成屬空隙層(低折射率層)之前驅物的空隙結構。前驅物形成步驟無特別限定,例如亦可藉由使經塗敷微細孔粒子含有液而製成之塗敷膜乾燥之乾燥步驟來形成前驅物(空隙結構)。藉由乾燥步驟中之乾燥處理,例如不僅可去除上述塗敷膜中之溶劑(溶膠粒子液中所含之溶劑),還可在乾燥處理中使溶膠粒子沉降、堆積以形成空隙結構。乾燥處理之溫度例如為50℃~250℃,宜為60℃~150℃,較宜為70℃~130℃。乾燥處理時間例如可為0.1分鐘~30分鐘,宜為0.2分鐘~10分鐘,較宜為0.3分鐘~3分鐘。In addition, the method for forming the low refractive index layer includes, for example, the step of forming a precursor as described above, and this step is to form a void structure that is a precursor of the void layer (low refractive index layer). The step of forming the precursor is not particularly limited, and for example, the precursor (void structure) may be formed by a drying step of drying a coating film formed by applying a microporous particle-containing liquid. The drying process in the drying step not only removes the solvent in the above-mentioned coating film (solvent contained in the sol particle liquid), but also allows the sol particles to settle and accumulate to form a void structure during the drying process. The temperature of the drying treatment is, for example, 50°C~250°C, preferably 60°C~150°C, more preferably 70°C~130°C. The drying treatment time may be, for example, 0.1 minutes to 30 minutes, preferably 0.2 minutes to 10 minutes, more preferably 0.3 minutes to 3 minutes.

乾燥處理例如可為自然乾燥,可為加熱乾燥,亦可為減壓乾燥。其中,在工業上連續生產之前提下宜使用加熱乾燥。加熱乾燥之方法無特別限制,例如可使用一般的加熱機構。加熱機構可舉例如熱風器、加熱輥、遠紅外線加熱器等。又,關於所使用之溶劑,為了抑制乾燥時隨溶劑揮發而發生之收縮應力以及其造成空隙層(聚矽氧多孔體)之裂痕現象,以表面張力低之溶劑為佳。溶劑可舉例如以異丙醇(IPA)為代表之低級醇、己烷、全氟己烷等。又,亦可於上述IPA等中添加少量之全氟系界面活性劑或聚矽氧系界面活性劑來降低表面張力。The drying treatment may be, for example, natural drying, heat drying, or reduced pressure drying. Among them, it is preferable to use heat drying on the premise of industrial continuous production. The method of heating and drying is not particularly limited, for example, a general heating mechanism can be used. The heating mechanism may, for example, be an air heater, a heating roller, or a far-infrared heater. In addition, regarding the solvent used, in order to suppress the shrinkage stress that occurs with the volatilization of the solvent during drying and the crack phenomenon caused by the void layer (polysiloxane porous body), a solvent with a low surface tension is preferable. Examples of the solvent include lower alcohols represented by isopropanol (IPA), hexane, perfluorohexane, and the like. In addition, a small amount of perfluorinated surfactant or polysiloxane-based surfactant may be added to the above-mentioned IPA to lower the surface tension.

並且,低折射率層之形成方法係如上述包含交聯反應步驟,該步驟係於前驅物形成步驟後在該前驅物內部引發交聯反應;該交聯反應步驟中,係透過光照射或加熱來產生鹼性物質,且交聯反應步驟為多階段。在交聯反應步驟之第1階段中,例如係使微細孔粒子彼此藉由觸媒(鹼性物質)之作用來化學鍵結。藉此,例如塗敷膜(前驅物)中之粉碎物之三維結構會被固定化。利用習知之燒結進行固定化時,例如係以施行200℃以上之高溫處理來激發矽烷醇基之脫水縮合、形成矽氧烷鍵。本形成方法中,藉由使可催化上述脫水縮合反應之各種添加劑進行反應,例如可在100℃前後之較低的乾燥溫度及少於數分鐘之短處理時間下,連續形成空隙結構並固定化。Moreover, the method of forming the low refractive index layer includes a crosslinking reaction step as described above, which is to initiate a crosslinking reaction inside the precursor after the precursor forming step; in the crosslinking reaction step, light irradiation or heating To produce alkaline substances, and the cross-linking reaction steps are multi-stage. In the first stage of the cross-linking reaction step, for example, microporous particles are chemically bonded to each other through the action of a catalyst (basic substance). Thereby, for example, the three-dimensional structure of the pulverized material in the coating film (precursor) is immobilized. When using conventional sintering for immobilization, for example, high temperature treatment above 200°C is performed to stimulate dehydration condensation of silanol groups and form siloxane bonds. In this formation method, by reacting various additives that can catalyze the above-mentioned dehydration condensation reaction, for example, the void structure can be continuously formed and immobilized at a low drying temperature around 100°C and a short processing time of less than a few minutes. .

化學鍵結之方法無特別限制,例如可因應膠狀矽化合物之種類適當決定。舉具體例來說,化學鍵結例如可藉由粉碎物彼此之化學交聯鍵結來進行,其他還可想到例如將氧化鈦等之無機粒子等添加至粉碎物中時,使無機粒子與粉碎物進行化學交聯鍵結。又,亦有載持酵素等生物觸媒之情況、或是使與觸媒活性點不同之其他部位與粉碎物進行化學交聯鍵結之情況。因此,低折射率層之形成方法不僅只有例如以溶膠粒子彼此形成之空隙層(聚矽氧多孔體),還可想到擴展應用於有機無機混合空隙層、主客(host-guest)空隙層等。The method of chemical bonding is not particularly limited, for example, it can be appropriately determined according to the type of colloidal silicon compound. To give a specific example, chemical bonding can be carried out by chemical cross-linking between pulverized materials, for example, when adding inorganic particles such as titanium oxide to the pulverized product, the inorganic particles and pulverized product can also be conceived. Perform chemical cross-linking. In addition, there are also cases where biocatalysts such as enzymes are carried, or where other parts different from the active sites of the catalyst are chemically cross-linked with the pulverized product. Therefore, the formation method of the low-refractive index layer is not limited to, for example, a void layer (polysiloxane porous body) formed by sol particles, but can also be extended to an organic-inorganic hybrid void layer, a host-guest void layer, and the like.

在上述觸媒存在下之化學反應要在低折射率層之形成方法中的哪個階段進行(發生)無特別限定,例如可在上述多階段之交聯反應步驟中之至少一個階段進行。例如,低折射率層之形成方法中如上述,乾燥步驟亦可兼作前驅物形成步驟。又,例如亦可在乾燥步驟後進行多階段之交聯反應步驟,且在其至少一個階段中,使微細孔粒子彼此藉由觸媒之作用來化學鍵結。例如如上述當觸媒為光活性觸媒時,可於交聯反應步驟中,藉由光照射使微細孔粒子彼此化學鍵結而形成多孔體的前驅物。又,當觸媒為熱活性觸媒,可於交聯反應步驟中,藉由加熱使微細孔粒子彼此化學鍵結,而形成多孔體的前驅物。The chemical reaction in the presence of the above-mentioned catalyst is not particularly limited at which stage in the formation method of the low refractive index layer, for example, it can be carried out at least one stage among the above-mentioned multi-stage crosslinking reaction steps. For example, in the method of forming the low refractive index layer, as described above, the drying step can also be used as the precursor forming step. Also, for example, after the drying step, a multi-stage crosslinking reaction step may be performed, and in at least one stage, the microporous particles may be chemically bonded to each other through the action of a catalyst. For example, when the catalyst is a photoactive catalyst as mentioned above, in the cross-linking reaction step, the microporous particles can be chemically bonded to each other by light irradiation to form a precursor of a porous body. In addition, when the catalyst is a thermally active catalyst, in the cross-linking reaction step, the microporous particles can be chemically bonded to each other by heating to form the precursor of the porous body.

上述化學反應例如可對包含有事先添加於溶膠粒子液(例如懸浮液)中之觸媒的塗敷膜施行光照射或加熱來進行,或是可對塗敷膜吹附觸媒後再施行光照射或加熱來進行,又或可一邊吹附觸媒一邊施行光照射或加熱來進行。光照射之累積光量無特別限定,以波長360nm換算,例如為200mJ/cm 2~800mJ/cm 2,宜為250mJ/cm 2~600mJ/cm 2,較宜為300mJ/cm 2~400mJ/cm 2。由為了防止照射量不足使利用觸媒之光吸收的分解無法進展而效果不充足之觀點來看,以200mJ/cm 2以上之累積光量為佳。加熱處理之條件無特別限制。加熱溫度例如為50℃~250℃,宜為60℃~150℃,較宜為70℃~130℃。加熱時間例如為0.1分鐘~30分鐘,宜為0.2分鐘~10分鐘,較宜為0.3分鐘~3分鐘。或者,如上述,將經塗敷之溶膠粒子液(例如懸浮液)乾燥之步驟亦可兼作在觸媒存在下進行化學反應之步驟。亦即,在將經塗敷之溶膠粒子液(例如懸浮液)乾燥之步驟中,也可利用在觸媒存在下之化學反應使粉碎物(微細孔粒子)彼此化學鍵結。此時,亦可藉由於乾燥步驟後將塗敷膜進一步加熱,使粉碎物(微細孔粒子)彼此更牢固地結合。並且,吾等推測在觸媒存在下之化學反應也有在製作微細孔粒子含有液(例如懸浮液)之步驟及塗敷微細孔粒子含有液之步驟中發生之情形。惟,低折射率層之形成方法不受該推測所限。又,關於所使用之溶劑,例如在為了抑制乾燥時隨溶劑揮發而發生之收縮應力及其造成空隙層之裂痕現象,以表面張力低之溶劑為佳。可舉例如以異丙醇(IPA)為代表之低級醇、己烷、全氟己烷等。 The above-mentioned chemical reaction, for example, can be carried out by irradiating light or heating a coating film containing a catalyst previously added to a sol particle liquid (such as a suspension), or by blowing and attaching a catalyst to the coating film and then applying light. It may be performed by irradiation or heating, or may be performed by performing light irradiation or heating while blowing the catalyst. There is no particular limitation on the accumulated light quantity of light irradiation. It is converted to a wavelength of 360nm, for example, 200mJ/cm 2 ~800mJ/cm 2 , preferably 250mJ/cm 2 ~600mJ/cm 2 , more preferably 300mJ/cm 2 ~400mJ/cm 2 . From the viewpoint of preventing the decomposition by the photoabsorption of the catalyst from progressing due to insufficient irradiation dose and insufficient effect, the accumulated light dose of 200 mJ/cm 2 or more is preferable. The conditions of the heat treatment are not particularly limited. The heating temperature is, for example, 50°C-250°C, preferably 60°C-150°C, more preferably 70°C-130°C. The heating time is, for example, 0.1 minute to 30 minutes, preferably 0.2 minute to 10 minutes, more preferably 0.3 minute to 3 minutes. Alternatively, as mentioned above, the step of drying the coated sol particle liquid (such as a suspension) can also be used as a step of carrying out a chemical reaction in the presence of a catalyst. That is, in the step of drying the applied sol particle liquid (for example, a suspension), the pulverized matter (microporous particles) may be chemically bonded to each other by utilizing a chemical reaction in the presence of a catalyst. At this time, by further heating the coating film after the drying step, the pulverized materials (microporous particles) can be more firmly bonded to each other. In addition, we speculate that the chemical reaction in the presence of a catalyst may also occur in the step of preparing a microporous particle-containing liquid (such as a suspension) and the step of applying the microporous particle-containing liquid. However, the method of forming the low-refractive index layer is not limited by this speculation. Also, regarding the solvent used, for example, in order to suppress the shrinkage stress that occurs with the volatilization of the solvent during drying and the cracking phenomenon caused by the void layer, a solvent with a low surface tension is preferable. Examples thereof include lower alcohols typified by isopropanol (IPA), hexane, perfluorohexane, and the like.

在低折射率層之形成方法中,藉由交聯反應步驟為多階段,例如可較交聯反應步驟為1階段之情況更提升空隙層(低折射率層)之強度。以下有將交聯反應步驟之第2階段以後之步驟稱為「熟化步驟」之情形。在熟化步驟中,例如亦可藉由加熱前驅物以在前驅物內部更促進交聯反應。於交聯反應步驟中發生之現象及機制尚不明瞭,惟例如如上所述。例如在熟化步驟中,將加熱溫度設為低溫,一邊抑制前驅物收縮一邊引發交聯反應,藉此可提升強度,而可達成兼顧高空隙率與強度。熟化步驟之溫度例如為40℃~70℃,宜為45℃~65℃,較宜為50℃~60℃。進行熟化步驟之時間例如為10hr~30hr,宜為13hr~25hr,較宜為15hr~20hr。In the formation method of the low-refractive index layer, the strength of the void layer (low-refractive index layer) can be increased more than when the cross-linking reaction step is one step, for example, by having multiple steps of the cross-linking reaction step. Hereinafter, the steps after the second stage of the crosslinking reaction step may be referred to as "aging step". In the curing step, for example, the precursor can be heated to further promote the cross-linking reaction inside the precursor. The phenomenon and mechanism occurring in the cross-linking reaction step are not clear, but are, for example, as described above. For example, in the curing step, the heating temperature is set to a low temperature, and the cross-linking reaction is induced while suppressing the shrinkage of the precursor, thereby improving the strength, and achieving both high porosity and strength. The temperature of the aging step is, for example, 40°C-70°C, preferably 45°C-65°C, more preferably 50°C-60°C. The time for performing the aging step is, for example, 10 hr to 30 hr, preferably 13 hr to 25 hr, more preferably 15 hr to 20 hr.

依以上方式形成之低折射率層的強度優異,因此例如可製成捲狀多孔體,而有製造效率佳、容易處理等優點。The low-refractive index layer formed in the above manner has excellent strength, so it can be made into a roll-shaped porous body, for example, and has the advantages of high production efficiency and easy handling.

依所述方式形成之低折射率層(空隙層)例如亦可進一步與其他薄膜(層)積層而做成含多孔質結構之積層結構體。此時,積層結構體之各構成要素例如可藉由黏著劑或接著劑來積層。For example, the low-refractive-index layer (void layer) formed in the above manner can be further laminated with other thin films (layers) to form a laminated structure including a porous structure. In this case, the constituent elements of the laminated structure can be laminated with, for example, an adhesive or an adhesive.

低折射率層之具體構成及形成方法之詳細內容例如記載於國際公開第2019/151073號中。本說明書中係援用該公報之記載作為參考。Details of the specific composition and formation method of the low-refractive index layer are described in, for example, International Publication No. 2019/151073. In this specification, the description of this publication is cited as a reference.

C.微型LED陣列基板 微型LED陣列基板可使用任意適當構成之微型LED陣列基板。代表上如圖1所示,微型LED陣列基板10具備驅動基板12與複數個微型LED11,該等複數個微型LED11係於該驅動基板12上排列成矩陣狀。 C. Micro LED array substrate As the micro LED array substrate, any suitable micro LED array substrate can be used. Representatively as shown in FIG. 1 , the micro LED array substrate 10 has a driving substrate 12 and a plurality of micro LEDs 11 , and the plurality of micro LEDs 11 are arranged in a matrix on the driving substrate 12 .

微型LED意指晶片尺寸例如為1µm見方~100µm見方之LED。Micro-LEDs refer to LEDs whose chip size is, for example, 1 µm square to 100 µm square.

在一實施形態中,複數個微型LED可使用單一種類之微型LED。在一實施形態中,上述微型LED為藍色LED或紫外線LED。In one embodiment, a single type of micro LED can be used for the plurality of micro LEDs. In one embodiment, the above-mentioned micro LEDs are blue LEDs or ultraviolet LEDs.

驅動基板可構成為使微型LED各自個別切換驅動。驅動基板為熟知此項技藝之人士所周知,故在此省略說明。The drive substrate can be configured to individually switch and drive the micro LEDs. The driving substrate is well known to those skilled in the art, so the description is omitted here.

D.密封部 密封部可以任意適當之透明材料形成。構成密封部之材料可舉例如環氧系樹脂、聚矽氧系樹脂、丙烯酸系樹脂等。又,密封部亦可藉由熔融玻璃形成。構成密封部之玻璃可舉例如丙烯酸玻璃、冕玻璃、燧石玻璃、硼矽酸玻璃等。 D. Sealing Department The sealing portion can be formed of any suitable transparent material. The material constituting the sealing portion can be, for example, epoxy resin, polysiloxane resin, acrylic resin and the like. Moreover, the sealing part can also be formed by molten glass. The glass constituting the sealing portion may, for example, be acrylic glass, crown glass, flint glass, or borosilicate glass.

密封部亦可由接著劑或黏著劑構成。在一實施形態中,密封部係由黏著劑構成。The sealing part can also be made of an adhesive or an adhesive. In one embodiment, the sealing portion is made of an adhesive.

接著劑可使用任意適當之接著劑。可列舉例如:異氰酸酯系、聚乙烯醇系、明膠系、乙烯基系乳膠系、水系聚胺甲酸乙酯、水系聚酯等之水系接著劑、紫外線硬化型接著劑、電子束硬化型接著劑等之硬化型接著劑等。As the adhesive, any appropriate adhesive can be used. Examples include water-based adhesives such as isocyanate-based, polyvinyl alcohol-based, gelatin-based, vinyl-based latex-based, water-based polyurethane, and water-based polyester, UV-curable adhesives, electron beam-curable adhesives, etc. Hardening adhesives, etc.

黏著劑可使用任意適當之黏著劑。可列舉例如:橡膠系、丙烯酸系、聚矽氧系、胺甲酸乙酯系、乙烯基烷基醚系、聚乙烯醇系、聚乙烯吡咯啶酮系、聚丙烯醯胺系、纖維素系等之黏著劑。其中,由光學透明性優異、且黏著特性、耐候性、耐熱性等優異之方面來看,宜使用丙烯酸系黏著劑。Adhesive Any suitable adhesive can be used. Examples include rubber-based, acrylic-based, silicone-based, urethane-based, vinyl alkyl ether-based, polyvinyl alcohol-based, polyvinylpyrrolidone-based, polyacrylamide-based, cellulose-based, etc. The adhesive. Among them, an acrylic adhesive is preferably used from the viewpoint of excellent optical transparency, adhesive properties, weather resistance, heat resistance, and the like.

密封部之波長590nm之光線透射率(23℃)例如可為80%以上,宜可為85%以上,較宜可為90%以上。又,密封部之波長450nm~500nm之平均光線透射率宜為70%以上,較宜為75%以上,更宜為80%以上。又,密封部之波長500nm~780nm之平均光線透射率宜為80%以上,較宜為85%以上,更宜為90%以上。The light transmittance (at 23° C.) of the sealing portion at a wavelength of 590 nm may be, for example, 80% or more, preferably 85% or more, more preferably 90% or more. Also, the average light transmittance of the sealing portion at a wavelength of 450 nm to 500 nm is preferably at least 70%, more preferably at least 75%, and more preferably at least 80%. Also, the average light transmittance of the sealing portion at a wavelength of 500 nm to 780 nm is preferably at least 80%, more preferably at least 85%, and more preferably at least 90%.

密封部之折射率宜為1.40以上,較宜為1.40~2.00,更宜為1.45~1.80。The refractive index of the sealing part is preferably above 1.40, more preferably 1.40~2.00, more preferably 1.45~1.80.

密封部之厚度宜為200µm以下,較宜為150µm以下,更宜為100µm以下,尤宜為50µm以下。若減薄密封部之厚度,抑制混色之效果便顯著。密封部之厚度的下限例如為10µm。此外,密封部之厚度可為從微型LED之低折射率層側之面至密封部之微型LED側之面為止之距離。The thickness of the sealing part is preferably not more than 200 µm, more preferably not more than 150 µm, more preferably not more than 100 µm, and especially preferably not more than 50 µm. If the thickness of the sealing part is reduced, the effect of suppressing color mixing is remarkable. The lower limit of the thickness of the sealing portion is, for example, 10 µm. In addition, the thickness of the sealing portion may be the distance from the surface of the micro-LED on the low-refractive-index layer side to the surface of the sealing portion on the micro-LED side.

E.波長轉換層 波長轉換層係一吸收來自微型LED之激發光並發出預定顏色之光的層。作為微型LED使用藍色LED時,係吸收來自微型LED之激發光,並藉由發出紅色光之波長轉換層形成紅色子像素,且吸收該激發光並藉由發出綠色光之波長轉換層形成綠色子像素。又,使用紫外線LED時,係被紫外線激發後藉由發出紅色光之波長轉換層形成紅色子像素,被紫外線激發後藉由發出綠色光之波長轉換層形成綠色子像素,且被紫外線激發後藉由發出藍色光之波長轉換層形成藍色子像素。 E. Wavelength conversion layer The wavelength conversion layer is a layer that absorbs the excitation light from the micro LED and emits light of a predetermined color. When a blue LED is used as a micro LED, the excitation light from the micro LED is absorbed, and a red sub-pixel is formed by a wavelength conversion layer that emits red light, and a green sub-pixel is formed by absorbing the excitation light and a green light is emitted by a wavelength conversion layer that emits green light sub-pixel. In addition, when ultraviolet LEDs are used, red sub-pixels are formed through the wavelength conversion layer emitting red light after being excited by ultraviolet rays, and green sub-pixels are formed through the wavelength conversion layer emitting green light after being excited by ultraviolet rays. A blue sub-pixel is formed by a wavelength conversion layer that emits blue light.

在一實施形態中,波長轉換層包含螢光體粒子。波長轉換層代表上包含基質與分散於該基質中之螢光體粒子。構成基質之材料(以下亦稱為基質材料)可使用任意適當之材料。所述材料可舉例如樹脂、有機氧化物、無機氧化物。基質材料宜為樹脂。樹脂可為熱塑性樹脂,可為熱硬化性樹脂,亦可為活性能量線硬化性樹脂(例如電子束硬化型樹脂、紫外線硬化型樹脂、可見光線硬化型樹脂)。宜為熱硬化性樹脂或紫外線硬化型樹脂,較宜為熱硬化性樹脂。樹脂可單獨使用,亦可組合(例如摻合、共聚)來使用。In one embodiment, the wavelength conversion layer includes phosphor particles. The wavelength conversion layer typically includes a matrix and phosphor particles dispersed in the matrix. Any appropriate material can be used for the material constituting the matrix (hereinafter also referred to as a matrix material). The material may, for example, be resin, organic oxide, or inorganic oxide. The matrix material is preferably resin. The resin may be a thermoplastic resin, a thermosetting resin, or an active energy ray curable resin (such as an electron beam curable resin, an ultraviolet curable resin, or a visible light curable resin). It is preferably a thermosetting resin or an ultraviolet curable resin, more preferably a thermosetting resin. The resins may be used alone or in combination (for example, blending, copolymerization).

在一實施形態中,螢光體粒子可使用量子點。量子點可控制波長轉換層之波長轉換特性。具體而言,藉由適當組合具有不同發光中心波長之量子點來使用,可形成可實現具有所期望之發光中心波長之光的波長轉換層。量子點之發光中心波長可依量子點之材料及/或組成、粒子尺寸、形狀等來調整。量子點例如已知有:於600nm~680nm之範圍的波長帶中具有發光中心波長之量子點(以下稱量子點A)、於500nm~600nm之範圍的波長帶中具有發光中心波長之量子點(以下稱量子點B)、於400nm~500nm之波長帶中具有發光中心波長之量子點(以下稱量子點C)。量子點A係被激發光(來自微型LED之光)激發而發出紅色光,量子點B係發出綠色光,量子點C則係發出藍色光。藉由適當組合該等,使預定波長之光入射及通過波長轉換層,可實現於所期望之波長帶中具有發光中心波長之光。In one embodiment, quantum dots can be used for the phosphor particles. Quantum dots can control the wavelength conversion properties of the wavelength conversion layer. Specifically, by appropriately combining and using quantum dots having different emission center wavelengths, it is possible to form a wavelength conversion layer capable of realizing light having a desired emission center wavelength. The central wavelength of light emission of quantum dots can be adjusted according to the material and/or composition, particle size and shape of quantum dots. Quantum dots are known, for example: quantum dots having a central wavelength of light emission in the wavelength range of 600nm to 680nm (hereinafter referred to as quantum dots A), quantum dots having a central wavelength of light emission in the wavelength range of 500nm to 600nm ( Hereinafter referred to as quantum dots B), quantum dots having a central wavelength of light emission in the wavelength band of 400nm to 500nm (hereinafter referred to as quantum dots C). The quantum dot A is excited by the excitation light (light from the micro-LED) to emit red light, the quantum dot B emits green light, and the quantum dot C emits blue light. By appropriately combining these, light having a predetermined wavelength is incident on and passes through the wavelength conversion layer, and light having an emission center wavelength in a desired wavelength band can be realized.

量子點可以任意適當之材料構成。量子點宜可以無機材料構成,較宜可以無機導體材料或無機半導體材料構成。半導體材料可舉例如II-VI族、III-V族、IV-VI族及IV族之半導體。具體例可列舉Si、Ge、Sn、Se、Te、B、C(包含鑽石)、P、BN、BP、BAs、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、ZnO、ZnS、ZnSe、ZnTe、CdS、CdSe、CdSeZn、CdTe、HgS、HgSe、HgTe、BeS、BeSe、BeTe、MgS、MgSe、GeS、GeSe、GeTe、SnS、SnSe、SnTe、PbO、PbS、PbSe、PbTe、CuF、CuCl、CuBr、CuI、Si 3N 4、Ge 3N 4、Al 2O 3、(Al、Ga、In) 2(S、Se、Te) 3、Al 2CO。該等可單獨使用,亦可組合2種以上來使用。量子點亦可包含有p型摻雜劑或n型摻雜劑。 Quantum dots can be made of any suitable material. Quantum dots can preferably be made of inorganic materials, more preferably can be made of inorganic conductor materials or inorganic semiconductor materials. The semiconductor material can be, for example, II-VI, III-V, IV-VI, and IV semiconductors. Specific examples include Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si 3 N 4 , Ge 3 N 4 , Al 2 O 3 , (Al, Ga, In) 2 (S, Se, Te) 3 , Al 2 CO. These may be used individually or in combination of 2 or more types. Quantum dots can also contain p-type dopants or n-type dopants.

量子點的尺寸可因應所期望之發光波長採用任意適當之尺寸。量子點的尺寸宜為1nm~10nm,較宜為2nm~8nm。量子點的尺寸若在所述範圍內,綠色及紅色兩色各自便可展現鮮明之發光,而可實現高演色性。例如,綠色光可在量子點的尺寸為7nm左右發光,而紅色光可在3nm左右發光。量子點的尺寸在量子點例如為真球狀時為平均粒徑,在為其以外之形狀時為沿該形狀中之最小軸的尺寸。此外,量子點之形狀可因應目的採用任意適當之形狀。具體例可舉真球狀、鱗片狀、板狀、橢圓球狀、不定形。The size of the quantum dots can be any appropriate size according to the desired emission wavelength. The size of the quantum dots is preferably 1 nm to 10 nm, more preferably 2 nm to 8 nm. If the size of the quantum dots is within the above-mentioned range, each of the green and red colors can exhibit distinct luminescence, and high color rendering can be realized. For example, green light can emit light at a quantum dot size of about 7nm, while red light can emit light at about 3nm. The size of the quantum dot is the average particle diameter when the quantum dot is, for example, a true spherical shape, and the size along the smallest axis of the shape when it is other than that. In addition, the shape of the quantum dots can be any appropriate shape depending on the purpose. Specific examples include true spherical shape, scaly shape, plate shape, ellipsoidal shape, and amorphous shape.

相對於基質材料100重量份,量子點宜可以1重量份~50重量份、較宜可以2重量份~30重量份之比率摻混。量子點之摻混量若在所述範圍內,便可提供一種RGB全部之色相平衡優異之顯示器。With respect to 100 parts by weight of the matrix material, quantum dots are preferably blended in a ratio of 1 to 50 parts by weight, preferably 2 to 30 parts by weight. If the blending amount of quantum dots is within the above-mentioned range, a display with excellent color balance of all RGB can be provided.

量子點之詳細內容例如已記載於日本專利特開2012-169271號公報、日本專利特開2015-102857號公報、日本專利特開2015-65158號公報、日本專利特表2013-544018號公報、日本專利特表2013-544018號公報、日本專利特表2010-533976號公報中,本說明書即援用該等公報之記載作為參考。量子點亦可使用市售品。Details of quantum dots have been described in, for example, Japanese Patent Laid-Open No. 2012-169271, Japanese Patent Laid-Open No. 2015-102857, Japanese Patent Laid-Open No. 2015-65158, Japanese Patent Publication No. 2013-544018, Japanese Patent Laid-Open No. In Japanese Patent Application Publication No. 2013-544018 and Japanese Patent Application Publication No. 2010-533976, the description of these publications is used as a reference in this specification. Commercially available quantum dots can also be used.

在另一實施形態中,螢光體粒子係呈其組成所致之光致發光的粒子。所述螢光體粒子可舉例如硫化物、鋁酸鹽、氧化物、矽酸鹽、氮化物、YAG、鋱鋁石榴石(TAG)基底之材料。In another embodiment, the phosphor particles are photoluminescent particles due to their composition. The phosphor particles can be, for example, sulfide, aluminate, oxide, silicate, nitride, YAG, and TAG-based materials.

又,螢光體粒子亦可使用下述紅色螢光體、綠色螢光體。紅色螢光體可舉例如經以Mn 4+活化之複合氟化物螢光體。所謂複合氟化物螢光體意指下述配位化合物:含有至少一個配位中心(例如後述之M),且被作為配位基發揮作用之氟化物離子包圍,並因應需求藉由相對離子(例如後述之A)獲得電荷補償者。其具體例可舉:A 2[MF 5]:Mn 4+、A 3[MF 6]:Mn 4+、Zn 2[MF 7]:Mn 4+、A[In 2F 7]:Mn 4+、A 2[M´F 6]:Mn 4+、E[M´F 6]:Mn 4+、A 3[ZrF 7]:Mn 4+、Ba 0.65Zr 0.35F 2.70:Mn 4+。此處,A係Li、Na、K、Rb、Cs、NH 4或其組合。M係Al、Ga、In或其組合。M´係Ge、Si、Sn、Ti、Zr或其組合。E係Mg、Ca、Sr、Ba、Zn或其組合。宜為配位中心之配位數為6的複合氟化物螢光體。所述紅色螢光體之詳細內容記載於例如日本專利特開2015-84327號公報中。本說明書中係援用該公報之記載整體作為參考。 In addition, as phosphor particles, red phosphors and green phosphors described below can also be used. The red phosphor can be, for example, a composite fluoride phosphor activated with Mn 4+ . The so-called composite fluoride phosphor refers to the following coordination compound: it contains at least one coordination center (such as M described later), and is surrounded by fluoride ions that function as ligands, and as required by counter ions ( For example, A) to obtain charge compensation described later. Specific examples thereof include: A 2 [MF 5 ]: Mn 4+ , A 3 [MF 6 ]: Mn 4+ , Zn 2 [MF 7 ]: Mn 4+ , A[In 2 F 7 ]: Mn 4+ , A 2 [M´F 6 ]: Mn 4+ , E[M´F 6 ]: Mn 4+ , A 3 [ZrF 7 ]: Mn 4+ , Ba 0.65 Zr 0.35 F 2.70 : Mn 4+ . Here, A is Li, Na, K, Rb, Cs, NH 4 or a combination thereof. M is Al, Ga, In or a combination thereof. M' is Ge, Si, Sn, Ti, Zr or a combination thereof. E is Mg, Ca, Sr, Ba, Zn or a combination thereof. It is preferably a composite fluoride phosphor having a coordination number of 6 in the coordination center. The details of the red phosphor are described in, for example, Japanese Patent Application Laid-Open No. 2015-84327. In this specification, the entire description of this publication is incorporated by reference.

綠色螢光體可舉例如包含具有β型Si 3N 4晶體結構的矽鋁氮氧化物之固溶體作為主成分之化合物。宜進行處理使所述矽鋁氮氧化物晶體中所含之氧量在特定量(例如0.8質量%)以下。藉由進行所述處理,可獲得窄波峰寬且發出鮮明的光之綠色螢光體。所述綠色螢光體之詳細內容記載於例如日本專利特開2013-28814號公報中。本說明書中係援用該公報之記載整體作為參考。 The green phosphor is, for example, a compound containing a solid solution of silicon aluminum oxynitride having a β-type Si 3 N 4 crystal structure as a main component. It is preferable to perform treatment so that the amount of oxygen contained in the silicon aluminum oxynitride crystal is not more than a specific amount (for example, 0.8% by mass). By performing such processing, a green phosphor having a narrow peak width and emitting bright light can be obtained. The details of the green phosphor are described in, for example, Japanese Patent Laid-Open No. 2013-28814. In this specification, the entire description of this publication is incorporated by reference.

波長轉換層之厚度宜為5µm~100µm,較宜為30µm~50µm。波長轉換層之厚度若在所述範圍內,便可具有優異之轉換效率及耐久性。The thickness of the wavelength conversion layer is preferably 5 µm to 100 µm, more preferably 30 µm to 50 µm. If the thickness of the wavelength conversion layer is within the above range, it can have excellent conversion efficiency and durability.

如上述,在一實施形態中,各波長轉換層係藉由隔壁(遮光層)而間隔配置。隔壁之寬度(即相鄰之波長轉換層之間隔)宜為0.1µm~100µm,較宜為1µm~50µm。在本發明中,即便隔壁之寬度窄仍可充分抑制混色。藉由縮窄隔壁之寬度,可獲得發光效率優異之微型LED顯示器裝置。As described above, in one embodiment, the respective wavelength conversion layers are spaced apart by partition walls (light-shielding layers). The width of the partition wall (that is, the distance between adjacent wavelength conversion layers) is preferably 0.1 µm to 100 µm, more preferably 1 µm to 50 µm. In the present invention, even if the width of the partition wall is narrow, color mixing can be sufficiently suppressed. By narrowing the width of the partition wall, a micro LED display device with excellent luminous efficiency can be obtained.

如上述,構成直接利用來自微型LED之光的子像素時(例如藉由藍色LED形成藍色子像素時),可在該處將波長轉換層替代成光擴散層。光散射層中宜含有光散射性粒子。構成光散射性粒子之材料可舉例如氧化鋁、氧化鋯、氧化鈦、硫酸鋇等。As mentioned above, when constituting a sub-pixel that directly utilizes light from a micro LED (for example, when a blue sub-pixel is formed by a blue LED), the wavelength conversion layer can be replaced by a light diffusion layer. The light-scattering layer preferably contains light-scattering particles. The material constituting the light-scattering particles includes, for example, alumina, zirconia, titania, barium sulfate, and the like.

在一實施形態中,上述微型LED顯示器裝置更具有彩色濾光片,該彩色濾光片係配置於波長轉換層(及/或光擴散層)之與低折射率層相反側之面。彩色濾光片可因應子像素之發色做成任意適當之構成。在一實施形態中,係於各子像素配置如截止所期望之顏色以外之發色的彩色濾光片。例如,可於紅色子像素及綠色子像素使用如截止藍色發色的彩色濾光片。In one embodiment, the above-mentioned micro LED display device further has a color filter disposed on the surface of the wavelength conversion layer (and/or light diffusion layer) opposite to the low refractive index layer. The color filter can be made into any appropriate configuration according to the color of the sub-pixels. In one embodiment, a color filter that cuts off colors other than the desired color is arranged in each sub-pixel. For example, a color filter such as a blue-cut color filter can be used in the red sub-pixel and the green sub-pixel.

實施例 以下,藉由實施例來具體說明本發明,惟本發明不受該等實施例所限。 Example Hereinafter, the present invention will be described in detail by means of examples, but the present invention is not limited by these examples.

[實施例1] 針對圖2(a)所示構成,利用光學模擬求出紅色發光之亮度及綠色發光之亮度,圖2(a)所示構成為以下構成:即,排列作為波長轉換層之紅色螢光體與綠色螢光體,並隔著低折射率層(折射率:1.20)與密封部(折射率:1.50),於綠色螢光體正下方配置有藍色LED。波長轉換層皆為於基質部(折射率1.47)添加有波長轉換粒子(折射率1.80)10重量%者。波長轉換層之折射率皆為1.50。 本實施例、以及後述實施例及比較例中之光學特性係使用Synopsys公司光學模擬軟體(Lighttools)來算出。模擬所使用之光學模組如以下所述。 將各RGB之波長轉換層之厚度設為100µm、寬度設為100µm。將配置在各RGB之間之隔壁之寬度設為50nm。於與各波長轉換層相對向之位置配置LED。在本模擬中,為了調查混色之影響,僅配置與Green之波長轉換層對應之LED,且於LED與波長轉換層間配置了密封部(黏著劑層)。LED與波長轉換層之間之密封部之厚度如同表1。將低折射率層之厚度設為1.0µm。又,本尺寸係以4K解析度(3840x2160)假設為78吋。隔壁係於波長轉換層間以50.0µm做配置,並將透射率設定成0%。又,於各像素上配置受光器。 [Example 1] Regarding the structure shown in FIG. 2(a), the brightness of red light emission and the brightness of green light emission were obtained by optical simulation. The structure shown in FIG. The green phosphor is provided with a blue LED directly below the green phosphor via a low-refractive index layer (refractive index: 1.20) and a sealing portion (refractive index: 1.50). All of the wavelength conversion layers were obtained by adding 10% by weight of wavelength conversion particles (refractive index: 1.80) to the matrix portion (refractive index: 1.47). The refractive indices of the wavelength conversion layers are all 1.50. The optical characteristics in this example, and the examples and comparative examples described later were calculated using the optical simulation software (Lighttools) of Synopsys. The optical modules used in the simulation are as follows. The thickness of each RGB wavelength conversion layer was set to 100 µm, and the width was set to 100 µm. The width of the partition wall arranged between each RGB was set to 50 nm. LEDs are arranged at positions facing each wavelength conversion layer. In this simulation, in order to investigate the influence of color mixing, only LEDs corresponding to the Green wavelength conversion layer were placed, and a sealing part (adhesive layer) was placed between the LED and the wavelength conversion layer. The thickness of the sealing portion between the LED and the wavelength conversion layer is as shown in Table 1. The thickness of the low refractive index layer was set to 1.0 µm. Also, this size is assumed to be 78 inches with 4K resolution (3840x2160). The partition wall is arranged at 50.0µm between the wavelength conversion layers, and the transmittance is set to 0%. Also, a photoreceiver is arranged on each pixel.

[比較例1] 針對圖2(b)所示構成,利用光學模擬求出紅色發光之亮度及綠色發光之亮度,圖2(b)所示構成為以下構成:即,排列作為波長轉換層之紅色螢光體與綠色螢光體,並隔著密封部(未配置低折射率層),於綠色螢光體正下方配置有藍色LED。 [Comparative example 1] Regarding the structure shown in FIG. 2(b), the brightness of red light emission and the brightness of green light emission were obtained by optical simulation. The structure shown in FIG. A green phosphor is provided, and a blue LED is disposed directly under the green phosphor via a sealing portion (no low-refractive index layer is disposed).

<評估> 將實施例1之亮度相對於比較例1之亮度(100%)的比列於表1。此外,將LED與波長轉換層之間的密封部之厚度設定成25µm、75µm、125µm,求出在各自之厚度設定下之上述亮度的比。 在上述構成中,綠色螢光體與藍色LED係構成發綠色之子像素,因此具有綠色發光之亮度>紅色發光之亮度的關係,且綠色發光與紅色發光之亮度差愈大,混色抑制效果愈大。 由表1明顯可知,在本發明中藉由配置低折射率層,可抑制不需要之紅色發光,且可適宜抑制混色。又,藉由適當設定LED與波長轉換層之間的密封部之厚度,所述效果便明顯。 <Evaluation> The ratio of the brightness of Example 1 to the brightness (100%) of Comparative Example 1 is listed in Table 1. In addition, the thickness of the sealing portion between the LED and the wavelength conversion layer was set to 25 µm, 75 µm, and 125 µm, and the ratio of the above-mentioned luminance at each thickness setting was obtained. In the above configuration, the green phosphor and the blue LED form a green-emitting sub-pixel, so there is a relationship that the brightness of green light emission > the brightness of red light emission, and the greater the difference in brightness between green light emission and red light emission, the greater the effect of suppressing color mixing big. It is evident from Table 1 that in the present invention, by disposing the low-refractive index layer, unnecessary red light emission can be suppressed, and color mixing can be appropriately suppressed. Moreover, the said effect becomes remarkable by setting appropriately the thickness of the sealing part between LED and a wavelength conversion layer.

[表1]

Figure 02_image011
[Table 1]
Figure 02_image011

[實施例2] 針對圖2(a)所示構成,利用光學模擬求出紅色發光之亮度及綠色發光之亮度,圖2(a)所示構成為以下構成:即,排列作為波長轉換層之紅色螢光體與綠色螢光體,並隔著低折射率層與密封部(LED與波長轉換層之間之厚度:75µm),於綠色螢光體正下方配置有藍色LED(波長轉換層之厚度為100µm,且寬度為100µm,隔壁厚度為50µm,低折射率層之厚度為1.0µm)。 [Example 2] Regarding the structure shown in FIG. 2(a), the brightness of red light emission and the brightness of green light emission were obtained by optical simulation. The structure shown in FIG. The green phosphor is interposed between the low refractive index layer and the sealing part (thickness between the LED and the wavelength conversion layer: 75µm), and a blue LED is arranged directly below the green phosphor (thickness of the wavelength conversion layer is 100µm, And the width is 100µm, the thickness of the partition wall is 50µm, and the thickness of the low refractive index layer is 1.0µm).

[比較例2] 針對圖2(b)所示構成,利用光學模擬求出紅色發光之亮度及綠色發光之亮度,圖2(b)所示構成為以下構成:即,排列作為波長轉換層之紅色螢光體與綠色螢光體,並隔著密封部(厚度75µm)(未配置低折射率層),於綠色螢光體正下方配置有藍色LED。 [Comparative example 2] Regarding the structure shown in FIG. 2(b), the brightness of red light emission and the brightness of green light emission were obtained by optical simulation. The structure shown in FIG. A green phosphor, and a blue LED is placed directly under the green phosphor through a sealing part (thickness 75 µm) (without a low-refractive index layer).

<評估> 將實施例2之亮度相對於比較例2之亮度(100%)的比列於表2。此外,將低折射率層之折射率設定成1.10、1.20、1.25、1.30,求出在各折射率設定下之上述亮度的比。 由表2明顯可知,在本發明中藉由配置低折射率層,可抑制不需要之紅色發光,且可適宜抑制混色。 <Evaluation> The ratio of the brightness of Example 2 to the brightness (100%) of Comparative Example 2 is listed in Table 2. In addition, the refractive index of the low-refractive index layer was set to 1.10, 1.20, 1.25, and 1.30, and the ratio of the above-mentioned brightness in each setting of the refractive index was obtained. It is evident from Table 2 that, in the present invention, by arranging the low-refractive index layer, unnecessary red light emission can be suppressed, and color mixing can be appropriately suppressed.

[表2]

Figure 02_image013
[Table 2]
Figure 02_image013

10:微型LED陣列基板 11:微型LED 12:驅動基板 20:密封部 30:低折射率層 40:波長轉換層 50:隔壁(遮光層) 100:微型LED顯示器裝置 10: Micro LED array substrate 11: Micro LED 12:Drive substrate 20: sealing part 30: low refractive index layer 40: wavelength conversion layer 50: next door (shading layer) 100: Micro LED display device

圖1係本發明一實施形態之微型LED顯示器裝置的概略截面圖。 圖2中,(a)係顯示供於實施例之構成的概略截面圖;(b)係顯示供於比較例之構成的概略截面圖。 FIG. 1 is a schematic cross-sectional view of a micro LED display device according to an embodiment of the present invention. In FIG. 2, (a) is a schematic sectional view showing the structure provided in the Example; (b) is a schematic sectional view showing the structure provided in the Comparative Example.

10:微型LED陣列基板 10: Micro LED array substrate

11:微型LED 11: Micro LED

12:驅動基板 12:Drive substrate

20:密封部 20: sealing part

30:低折射率層 30: low refractive index layer

40:波長轉換層 40: wavelength conversion layer

50:隔壁(遮光層) 50: next door (shading layer)

100:微型LED顯示器裝置 100: Micro LED display device

Claims (7)

一種微型LED顯示器裝置,具備: 微型LED陣列基板,其包含複數個微型LED;且 自該微型LED陣列基板側起依序具備: 密封部,其係密封複數個該微型LED; 低折射率層;及 區隔而形成之複數層波長轉換層; 各層該波長轉換層係以在厚度方向上與1個該微型LED對應成為一組之方式形成; 該低折射率層之折射率低於該密封部之折射率及波長轉換層之折射率; 該低折射率層之折射率與該密封部之折射率的差為0.10以上;且 該低折射率層之折射率與波長轉換層之折射率的差為0.10以上。 A micro LED display device, comprising: a micro LED array substrate comprising a plurality of micro LEDs; and From the side of the micro-LED array substrate in order: a sealing part, which seals a plurality of the micro-LEDs; a low refractive index layer; and Multiple wavelength conversion layers formed by partitioning; The wavelength conversion layer of each layer is formed in a manner corresponding to one micro LED in the thickness direction; The refractive index of the low refractive index layer is lower than the refractive index of the sealing portion and the refractive index of the wavelength conversion layer; The difference between the refractive index of the low refractive index layer and the refractive index of the sealing part is 0.10 or more; and The difference between the refractive index of the low refractive index layer and the refractive index of the wavelength conversion layer is 0.10 or more. 如請求項1之微型LED顯示器裝置,其中前述低折射率層之折射率為1.25以下。The micro LED display device according to claim 1, wherein the refractive index of the aforementioned low refractive index layer is 1.25 or less. 如請求項1或2之微型LED顯示器裝置,其中前述低折射率層係一由多孔體構成之空隙層,且該多孔體係微細粒子彼此化學鍵結而構成者。The micro-LED display device according to claim 1 or 2, wherein the aforementioned low-refractive index layer is a void layer made of a porous body, and the fine particles of the porous system are chemically bonded to each other. 如請求項1至3中任一項之微型LED顯示器裝置,其中前述密封部係以黏著劑構成。The micro-LED display device according to any one of claims 1 to 3, wherein the sealing part is made of an adhesive. 如請求項1至4中任一項之微型LED顯示器裝置,其中前述各層波長轉換層係藉由隔壁而間隔配置。The micro-LED display device according to any one of claims 1 to 4, wherein the aforementioned wavelength conversion layers are arranged at intervals by partition walls. 如請求項1至5中任一項之微型LED顯示器裝置,其中前述微型LED為藍色LED或紫外線LED。The micro LED display device according to any one of claims 1 to 5, wherein the micro LEDs are blue LEDs or ultraviolet LEDs. 如請求項1至6中任一項之微型LED顯示器裝置,其更具有彩色濾光片,該彩色濾光片係配置於前述波長轉換層之與前述低折射率層相反側之面。The micro-LED display device according to any one of Claims 1 to 6, further comprising a color filter disposed on the surface of the wavelength conversion layer opposite to the low refractive index layer.
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