JP2017187549A - Wavelength conversion substrate, manufacturing method of wavelength conversion substrate, and display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high definition wavelength conversion substrate superior in light extraction efficiency.SOLUTION: The wavelength conversion substrate includes: a black matrix layer which has a base material, a latticed light shielding part which is formed on one plane of the base material; and plural openings enclosed by a light shielding part; a barrier formed on the light shielding part; a photosensitive resin layer formed over the surface of the barrier; a function layer formed over the surface of the photosensitive resin layer; and a wavelength conversion layer formed in the opening. The function layer is not in contact with the base material.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a wavelength conversion substrate, a method for manufacturing the wavelength conversion substrate, and a display device.

  As a technology that enables high resolution and low power consumption in the next-generation organic EL display, there is an organic EL display using a wavelength conversion method (for example, Patent Document 1). In the wavelength conversion method, blue light is used as a light source, a part of the blue light is used for blue display, and the rest is converted into red light and green light using a wavelength conversion material.

  An organic EL display using a wavelength conversion method has a wavelength conversion substrate including a wavelength conversion layer made of a wavelength conversion material. The wavelength conversion substrate is provided with a barrier that partitions the two wavelength conversion layers in order to suppress color mixing due to mixing of the wavelength conversion layers. This barrier is often composed of a plurality of layers in order to increase the utilization efficiency and light extraction efficiency of incident light on the wavelength conversion substrate.

  As a method for manufacturing the wavelength conversion substrate, for example, there is a patterning method by a photolithography method. However, in this method, as the wavelength conversion substrate is highly refined, the position of each layer constituting the barrier is displaced, and the use efficiency of incident light and the light extraction efficiency on the wavelength conversion substrate may decrease. Therefore, when the wavelength conversion substrate is made highly precise, it is required that the alignment accuracy of the mask used in the exposure process is sufficiently high.

  Since the mask alignment accuracy is determined by the mask finishing accuracy and the alignment accuracy of the exposure apparatus, a high-precision mask and an exposure apparatus with high alignment accuracy are required. Therefore, the mask and the exposure apparatus are expensive. Further, since the mask alignment with high accuracy is necessary, the throughput of the exposure process is lowered. From the above, the manufacturing method of the wavelength conversion substrate has a problem that the manufacturing cost becomes high.

International Publication No. 2010/084587

  One embodiment of the present invention has been made in view of such circumstances, and an object thereof is to provide a wavelength conversion substrate having high definition and excellent light extraction efficiency and a method for manufacturing the wavelength conversion substrate. Another object of one embodiment of the present invention is to provide a display device including the above-described wavelength conversion substrate and having high definition and excellent brightness.

  In order to solve the above problems, one embodiment of the present invention includes a base material, a lattice-shaped light-blocking portion provided on one surface of the base material, and a plurality of openings surrounded by the light-blocking portion. The black matrix layer, the barrier provided on the light shielding portion, the photosensitive resin layer provided on the surface of the barrier, the functional layer provided on the surface of the photosensitive resin layer, and the wavelength conversion provided on the opening And the functional layer provides a wavelength conversion substrate that is not in contact with the base material.

  One embodiment of the present invention includes a base material, a black matrix layer that is provided on one surface of the base material and includes a lattice-shaped light shielding portion, and a plurality of openings surrounded by the light shielding portion. A wavelength conversion substrate comprising: a barrier provided in the substrate; and a wavelength conversion layer provided in the opening, the step of forming a black matrix layer on one surface of the substrate, and , Covering the black matrix layer, forming a first resin layer using a positive photosensitive resin as a forming material, exposing the first resin layer from the other surface side of the substrate, and exposing the first resin layer There is provided a method of manufacturing a wavelength conversion substrate comprising: a first exposure development step of forming a barrier by developing a resin layer.

  In one embodiment of the present invention, after the first exposure and development step, a step of forming a first film using a positive photosensitive resin as a forming material along the surface of the base material on which the barrier is formed, and the first film A step of forming a second film along the surface of the film, and a second exposure development step of exposing the first film from the other surface side and developing the exposed first film. Then, the function provided on the surface of the positive photosensitive resin layer and the positive photosensitive resin layer provided on the surface of the barrier by removing the first film and the second film formed in the opening It is preferable to form a layer.

  In one embodiment of the present invention, a portion of the first film formed in the opening is exposed from one surface side between the step of forming the first film and the step of forming the second film. In the third exposure and development process, it is preferable that a portion having a different thickness of the first film is formed in the opening in the third exposure and development process.

  In one aspect of the present invention, in the step of forming the second film, a step of forming a shadow portion forming member in the opening, a step of forming the second film on one surface on which the shadow portion forming member is formed, The shadow forming member has a portion where the angle formed between the side surface of the shadow forming member and the surface of the first film is an acute angle or a right angle, and the shadow forming member overlaps the light shielding portion in a plan view. It is preferable not to be.

  In one embodiment of the present invention, in the step of forming the second film, the second film is preferably formed through a mask that covers a part of the first film formed in the opening.

  In one aspect of the present invention, after the first exposure and development step, a step of forming a third film using a negative photosensitive resin as a forming material along the surface of the base material on which the barrier is formed; The third film formed on the surface is exposed from one surface side, and the third film formed in the opening is developed to form a negative photosensitive resin layer provided on the surface of the barrier A fourth exposure development step, a step of forming a second film on the negative photosensitive resin layer and the opening, and a fourth film made of a positive photosensitive resin along the surface of the second film. A step of forming and exposing the fourth film formed in the opening from one surface side and developing the exposed fourth film so that the surface is formed on the surface of the second film provided on the barrier. The fifth exposure development process for forming the protective layer to be protected and the second film formed in the opening by etching After removed by, by removing the protective layer preferably comprises a step of forming a functional layer provided on the surface of the negative photosensitive resin layer.

  One embodiment of the present invention provides a display device including the above-described wavelength conversion substrate and an excitation light source that irradiates the wavelength conversion layer with excitation light.

  According to one embodiment of the present invention, a wavelength conversion substrate having high definition and excellent light extraction efficiency is provided. According to one aspect of the present invention, there is provided a method for manufacturing a wavelength conversion substrate that can provide a wavelength conversion substrate with high definition and excellent light extraction efficiency. According to one embodiment of the present invention, a display device with high definition and brightness is provided by including the above-described wavelength conversion substrate.

It is a schematic sectional drawing which shows the wavelength conversion board | substrate 100 of 1st Embodiment. It is a flowchart which shows the manufacturing method of the wavelength conversion board | substrate 100 in 1st Embodiment. It is a flowchart which shows formation process S2 of the partition part 30 which concerns on 1st Embodiment. It is process drawing which shows formation process S21 of the 1st resin layer 330 which concerns on 1st Embodiment. It is process drawing which shows 1st exposure image development process S22 which concerns on 1st Embodiment. It is process drawing which shows formation process S23 of the 1st film | membrane 350 which concerns on 1st Embodiment. It is a flowchart showing formation process S24 of the 2nd film 370 concerning a 1st embodiment. It is process drawing which shows 2nd exposure image development process S25 which concerns on 1st Embodiment. It is a schematic sectional drawing which shows the example of arrangement | positioning of the display apparatus 1000 which concerns on 1st Embodiment. It is process drawing which shows formation process S24 of the 2nd film | membrane 371 based on 2nd Embodiment. It is a flowchart which shows formation process S120 of the partition part 30 which concerns on 3rd Embodiment. It is process drawing which shows the exposure in 3rd exposure image development process S121 which concerns on 3rd Embodiment. It is process drawing which shows after image development of 3rd exposure image development process S121 which concerns on 3rd Embodiment. It is process drawing which shows formation process S24 of the 2nd film | membrane 372 which concerns on 3rd Embodiment. It is a flowchart which shows formation process S220 of the partition part 30 which concerns on 4th Embodiment. It is process drawing which shows the coating of the 2nd resin layer 710 which concerns on 4th Embodiment. It is process drawing which shows exposure of the 2nd resin layer 710 which concerns on 4th Embodiment. It is process drawing which shows after image development of the exposed 2nd resin layer 710 which concerns on 4th Embodiment. It is process drawing which shows formation process S222 of the 2nd film | membrane 373 which concerns on 4th Embodiment. It is a flowchart which shows formation process S320 of the partition part 30 which concerns on 5th Embodiment. It is process drawing which shows formation process S321 of the 3rd film | membrane 351 which concerns on 5th Embodiment. It is process drawing which shows the exposure in 4th exposure image development process S322 which concerns on 5th Embodiment. It is process drawing which shows after the image development in 4th exposure image development process S322 which concerns on 5th Embodiment. It is process drawing which shows formation process S324 of the 4th film | membrane 390 which concerns on 5th Embodiment. It is process drawing which shows the exposure in 5th exposure image development process S325 which concerns on 5th Embodiment. It is process drawing which shows after image development in 5th exposure image development process S325 which concerns on 5th Embodiment. It is process drawing which shows the etching in formation process S326 of the functional layer 37 which concerns on 5th Embodiment.

<First Embodiment>
Hereinafter, the wavelength conversion substrate of the first embodiment and a display device including the wavelength conversion substrate will be described with reference to the drawings.
In addition, in the drawings used in the following description, in order to make the features easy to understand, there are cases where the portions that become the features are enlarged for the sake of convenience, and the dimensional ratios of the respective components are not always the same as the actual ones. Absent. In addition, for the same purpose, portions that are not characteristic may be omitted from illustration.

[Wavelength conversion substrate]
FIG. 1 is a schematic cross-sectional view showing the wavelength conversion substrate 100 of the first embodiment.
As shown in FIG. 1, the wavelength conversion substrate 100 of the first embodiment includes a base material 10, a black matrix layer 20, a partition unit 30, and a wavelength conversion unit 40.

[Base material]
Since the base material 10 of the first embodiment is on the side from which light is emitted from a display device described later, light transmittance is required. In forming each member on the base material 10, the base material 10 is required to have heat resistance, solvent resistance, dimensional stability, and smoothness. As a forming material of the base material 10, an inorganic material or a plastic material having these characteristics is preferable.

Specific examples of the inorganic material include glass and quartz.
Specific examples of the plastic material include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyethersulfone (PES), and the like.
In addition to these, a base material obtained by coating the surface of a base material using the above-described plastic material with an inorganic material, a ceramic base material using alumina or the like as a forming material, and the like can be given.

  As a specific example of the base material 10, for example, a glass base material having a thickness of 0.7 mm used in a conventional display device can be given.

[Black matrix layer]
The black matrix layer 20 of the first embodiment is formed on one surface 10 a of the substrate 10. The black matrix layer 20 includes a lattice-shaped light shielding portion 31 and a plurality of openings 41 surrounded by the light shielding portion 31.

The light shielding unit 31 has a function of reducing a color mixture between adjacent wavelength conversion units 40 and improving a contrast ratio when the display device is used. In order to exhibit such a function, the light shielding part 31 is required to have a high light shielding rate and low reflectivity. As a material for forming the light shielding portion 31, for example, a black photoresist in which a pigment is mixed with a photosensitive resin, or a metal such as a multilayer film of Cr (chrome) or Cr / Cr oxide is used.
The photosensitive resin may be a positive photosensitive resin or a negative photosensitive resin.
Examples of pigments include black pigments, metal powders, metal oxides, and composite oxides composed of a plurality of metal oxides. Among these, a black pigment is preferably used as the pigment because of its high optical density. Specific examples of the black pigment include carbon black.

  The thickness of the light shielding part 31 is preferably 10 nm or more and 3 μm or less. When the thickness of the light shielding part 31 is 10 nm or more, sufficient light shielding properties can be obtained. When the thickness of the light shielding part 31 is 3 μm or less, the excitation light and the light emitted from the wavelength conversion part 40 are not easily absorbed by the light shielding part 31, and the light extraction efficiency is excellent.

[Partition section]
The partition part 30 of the first embodiment is provided on the light shielding part 31. The partition unit 30 has a function of reducing the color mixture between the adjacent wavelength conversion units 40 and improving the contrast ratio when the display device is used, like the light shielding unit 31 in the black matrix layer 20. The partition unit 30 also has a function of improving the light extraction efficiency from each wavelength conversion unit 40. In order to exhibit such a function effectively, it is preferable that the thickness of the partition part 30 is larger than the thickness of the wavelength conversion part 40 described later.

  The partition portion 30 is provided with a barrier 33, a photosensitive resin layer 35, and a functional layer 37 that are stacked in this order.

(barrier)
As a material for forming the barrier 33 according to the first embodiment, for example, a positive photoresist is used. A positive photoresist is desired to have excellent thermal stability as a permanent film and excellent solvent resistance.

  The positive type photoresist includes a base polymer, a photoreactive compound, and a solvent. The base polymer determines mechanical and chemical properties such as adhesion of the photoresist to the substrate, solubility in developer, temperature stability and chemical resistance. That is, by selecting a resin exhibiting excellent thermal stability and excellent solvent resistance as the base polymer, a photoresist exhibiting excellent heat resistance and excellent solvent resistance can be obtained. Examples of such positive photosensitive resin include polyimide resin, novolac resin, polysiloxane resin, and epoxy resin.

  The height of the barrier 33 is preferably larger than the thickness of the wavelength conversion unit 40 in order to effectively extract light passing through the wavelength conversion unit 40 to the outside of the wavelength conversion substrate 100. Specifically, the thickness of the barrier 33 is preferably 0.1 μm or more and 100 μm or less, and preferably 1 μm or more and 10 μm or less.

  The aspect ratio of the barrier 33 is preferably 0.5 or more and 10 or less. When the aspect ratio of the barrier 33 is 0.5 or more, a wavelength conversion substrate having a high definition and a high aperture ratio can be obtained. When the aspect ratio of the barrier 33 is 10 or less, the barrier 33 is not easily damaged, and sufficient adhesion between the barrier 33 and the light shielding portion 31 can be obtained. Here, the aspect ratio of the barrier is the ratio of the height of the barrier to the width of the barrier.

  The shape of the barrier 33 is not particularly limited as long as it covers the side surface of the wavelength conversion unit in order to reduce light leakage to the adjacent wavelength conversion unit 40. That is, the angle (inclination angle) formed by the side surface of the barrier 33 and the substrate 10 may be smaller than 90 ° or larger than 90 °. From the viewpoint of improving the light extraction efficiency of the wavelength conversion substrate 100, the inclination angle of the barrier 33 is preferably larger than 90 °. That is, the width of the cross section of the barrier 33 shown in FIG. 1 is the largest on the substrate 10 side that emits light, the smallest on the light source side when the display device is used, and from the substrate 10 to the light source side. The width of the cross section gradually decreases toward the end.

(Photosensitive resin layer)
The photosensitive resin layer 35 of the first embodiment is provided along the barrier 33.
As a forming material of the photosensitive resin layer 35, for example, a positive type or negative type photoresist is used. Examples of the resin contained in the positive or negative photoresist include acrylic resin, epoxy resin, polyimide, polymethylglutarimide, melamine resin, nylon, polystyrene, polycarbonate, polyvinyl chloride, polyvinylidene chloride, and polyvinyl acetate. Polyethylene, polymethyl methacrylate, MBS resin, medium density polyethylene, high density polyethylene, tetrafluoroethylene, polytrifluoroethylene chloride, polytetrafluoroethylene and the like. When using a positive photoresist, the resin contained in the positive photoresist is preferably polyimide or polymethylglutarimide because it exhibits excellent thermal stability without post-exposure baking or post-baking. .

  Moreover, as a forming material of the photosensitive resin layer 35, a resin composition in which fine particles having a particle size of 100 nm to 1 μm are contained in the above-described resin can be used. Thereby, irregularities can be formed on the surface of the photosensitive resin layer 35. When the functional layer 37 is formed on the photosensitive resin layer 35, irregularities can be formed also on the surface of the functional layer 37. That is, the photosensitive resin layer 35 has a function of controlling the surface shape of the functional layer 37.

  The thickness of the photosensitive resin layer 35 is preferably 10 nm or more and 1 μm or less. When the thickness of the photosensitive resin layer 35 is in the above range, the partition portion 30 can be made sufficiently thin in the horizontal direction. If the partition part 30 is thin enough, the area | region which forms the wavelength conversion part 40 can fully be ensured, and the brightness when it is set as a display apparatus can be improved.

(Functional layer)
The functional layer 37 of the first embodiment is provided along the photosensitive resin layer 35 and is not in contact with the base material 10. The functional layer 37 has a function of improving light extraction efficiency by isotropically and effectively reflecting or scattering excitation light from an excitation light source described later and light converted by each wavelength conversion unit 40. Further, since the functional layer 37 is not in contact with the base material 10, the color filter layer 50 of the wavelength conversion unit 40 described later is not easily peeled off from the substrate 10. In order to exhibit such a function, the functional layer 37 is required to have a high light reflectance or light scattering rate in a visible light region of 400 nm to 700 nm. The functional layer 37 is also required to have a low light transmittance in the visible light region of 400 nm to 700 nm in order to reduce color mixing between the adjacent wavelength conversion units 40.

  The functional layer 37 may be in the form of a thin film made of a material having light reflectivity or light scattering properties, or may be in a solid state in which these materials are dispersed in a resin. In addition, among materials having light reflectivity or light scattering properties, a material that can cope with high definition and a material that can apply a process for high definition are preferable.

  As the material having light reflectivity or light scattering property, an inorganic material may be used, an organic material may be used, or an inorganic material and an organic material may be used in combination.

  Specific examples of the inorganic material include metals such as gold, silver, copper, nickel, aluminum, tin, chromium, titanium, cobalt, and alloys thereof. As another specific example, oxide, nitride, sulfate, hydrochloride, nitrate having at least one element selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, barium and antimony Etc. Among these, a metal material is preferable and aluminum is more preferable because of its high stability to light or heat and excellent light reflectivity or light scattering.

  Specific examples of organic materials include polymethyl methacrylate, acrylic resin, acrylic-styrene copolymer, melamine resin, high refractive index melamine resin, polycarbonate resin, styrene resin, cross-linked polystyrene resin, polyvinyl chloride resin, benzoguanamine-melamine formaldehyde Examples thereof include resins and silicone resins.

  The resin preferably has translucency. In addition, the refractive index of the resin is preferably lower than the refractive index of the material having light reflectivity or light scattering property. Specific examples of such resins include acrylic resin, melamine resin, nylon, polystyrene, melamine beads, polycarbonate, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetate, polyethylene, polymethyl methacrylate, MBS resin, and medium density polyethylene. , High density polyethylene, tetrafluoroethylene, polytrifluoroethylene chloride, polytetrafluoroethylene and the like.

  Moreover, even if it is a material which does not originally have light reflectivity or light scattering property, for example, a solid state material in which fine particles containing these materials are dispersed in a resin is also included as the functional layer 37. The surface of fine particles containing these materials may have irregularities. As another example, irregularities may be formed on the surface of the functional layer 37 formed of a material that does not have light reflectivity or light scattering properties.

  At this time, the particle diameter of the fine particles or the average period of the surface irregularities is preferably 100 nm or more and 1 μm or less. If the particle diameter of the fine particles or the average period of the irregularities exceeds 1 μm, it is difficult to effectively scatter light by the functional layer 37 because it is too large compared to the wavelength of the light emitted from each wavelength conversion unit 40. On the other hand, if the particle diameter of the fine particles or the average period of the irregularities is less than 100 nm, it is too small to scatter the light compared to the wavelength of the light emitted from each wavelength conversion unit 40, so that the light is also scattered in the straight direction To do. Thereby, light enters the inside of the barrier 33 and the photosensitive resin layer 35, so that the light extraction efficiency may be lowered.

[Wavelength converter]
Hereinafter, the wavelength conversion unit 40 of the first embodiment will be described.
Among the wavelength conversion units 40, one that exhibits red light is referred to as a red wavelength conversion unit 43. The red wavelength conversion unit 43 is configured by laminating a red color filter layer 53 and a red wavelength conversion layer 63 in this order in the opening 41.
Among the wavelength conversion units 40, one that exhibits green light is referred to as a green wavelength conversion unit 45. The green wavelength conversion unit 45 is configured by laminating a green color filter layer 55 and a green wavelength conversion layer 65 in this order in the opening 41.
Among the wavelength conversion units 40, one that exhibits blue light is referred to as a blue wavelength conversion unit 47. The blue wavelength conversion unit 47 is configured by laminating a blue color filter layer 57 and a light scattering layer 67 in this order in the opening 41.

The red color filter layer 53, the green color filter layer 55, and the blue color filter layer 57 are collectively referred to as a color filter layer 50.
The red wavelength conversion layer 63 and the green wavelength conversion layer 65 are collectively referred to as a wavelength conversion layer 60.

(Color filter layer)
The color filter layer 50 of the first embodiment is provided in the plurality of openings 41 in the black matrix layer 20. That is, the color filter layer 50 is formed on the one surface 10a at a position where the substrate 10 and the plurality of openings 41 overlap in a plane. The color filter layer 50 has a function of improving the color purity of light emitted from the wavelength conversion layer 60.

  As a material for forming the color filter layer 50, for example, a pigment dispersion resist in which a pigment is dispersed in a binder is used.

  Examples of the binder used in the color filter layer 50 include a radical photopolymerization resin or a crosslinkable resin, and a radical photopolymerization resin is preferable. Examples of the photo-radical polymerization type resin include, for example, a mixture of an acrylic resin and an epoxy acrylate resin mixed with a photoinitiator.

  Examples of the pigment used in the color filter layer 50 include perylene pigments, isoindoline pigments, cyanine pigments, azo pigments, oxazine pigments, phthalocyanine pigments, quinacridone pigments, anthraquinone pigments, diketopyrrolopyrrole pigments. And pigments.

(Wavelength conversion layer)
The wavelength conversion layer 60 of the first embodiment is provided on the color filter layer 50. The wavelength conversion layer 60 of the first embodiment absorbs light having a specific wavelength of excitation light incident on the wavelength conversion layer 60 and emits (emits) light having a wavelength different from the wavelength of the absorbed light. Have a wavelength conversion function.

  The shape of the wavelength conversion layer 60 is not particularly limited as long as it can improve the light extraction efficiency. For example, the width of the cross section of the wavelength conversion layer 60 shown in FIG. 1 is the smallest on the substrate 10 side, which is the side from which light is emitted, and the largest on the light source side when the display device is used. The width of the cross section is gradually increased toward the side. That is, the opening area of the wavelength conversion unit 40 is large on the substrate 10 side, and the opening area of the wavelength conversion unit 40 is small on the light source side.

The red wavelength conversion layer 63 absorbs ultraviolet light, blue light, or green light out of excitation light from an excitation light source described later, and emits red light.
The green wavelength conversion layer 65 absorbs ultraviolet light or blue light in excitation light from an excitation light source described later, and emits green light.

  The wavelength conversion layer 60 includes at least a wavelength conversion material. The wavelength conversion layer 60 may be composed only of the wavelength conversion material, but for the purpose of improving the film forming property of the wavelength conversion layer 60 and increasing the wavelength conversion efficiency, the wavelength conversion material is dispersed in the binder material. It is preferable.

  The wavelength conversion material may be either a fluorescent substance or a phosphorescent substance, but a material having a high absorption rate in the wavelength band of excitation light and a high emission quantum yield is preferable. Here, the emission quantum yield is a value representing the ratio of the light amount of light converted by the wavelength conversion layer 60 to the light amount of excitation light absorbed by the wavelength conversion layer 60. Moreover, it is preferable that the wavelength conversion material is a material having a so-called high color purity that emits light of a desired color (red, green). Only one type of wavelength conversion material may be used alone, or two or more types may be used in combination. When two or more kinds of wavelength conversion materials are used in combination, the combination and ratio can be arbitrarily set.

  The wavelength conversion material can be arbitrarily selected from an organic wavelength conversion material or an inorganic wavelength conversion material. Organic wavelength conversion materials are preferably used because they generally have a high emission quantum yield. On the other hand, inorganic wavelength conversion materials are preferably used because of their high durability.

  Examples of organic wavelength conversion materials include low-molecular compounds such as polycyclic aromatic hydrocarbon (PAH) compounds, polymethine compounds, heterocyclic aromatic compounds, and complexes, and their molecular structures as main chains and side chains. Examples thereof include polymer compounds.

Examples of the PAH compound include anthracene, rubrene, perylene, and derivatives thereof.
Examples of the polymethine compounds include linear polymethines such as cyanine, cyclic polymethines such as boron dipyrromethene (BODIPY), rhodamine, and fluorescein, or derivatives thereof.
Heteroaromatic compounds include the compounds coumarin, oxadiazole, imidazole, or derivatives thereof.
Examples of the complex include a complex having a rare earth element such as europium (Eu) or iridium (Ir) as a central metal and a π-conjugated molecule as a ligand.

  By dispersing these low molecular weight wavelength conversion materials in the binder material, concentration quenching of the wavelength conversion material can be suppressed, and the emission quantum yield of the wavelength conversion layer 60 can be increased. Moreover, if it is a high molecular weight wavelength conversion material, it is not necessary to disperse | distribute to a binder material, and favorable film forming property is obtained.

  Examples of the inorganic wavelength conversion material include an emission center type phosphor and quantum dots.

Examples of the emission center type phosphor include β-sialon or CaAlSiN ₃ : Eu ²⁺ . In addition, these phosphor crystals may contain an activator such as Eu ²⁺ or Ce ^3+, an oxide, nitride, oxynitride, or sulfide of silicon or aluminum.
Examples of quantum dots include II-VI groups such as cadmium selenide (CdSe) and III-V groups such as indium phosphide (InP). Like the low-molecular fluorescent material, the quantum dots can be dispersed in the binder material to suppress concentration quenching of the fluorescent material, increase the emission quantum yield, and further convert the color of the converted light Since purity can be improved, it is preferable.

  The organic wavelength conversion material used for the red wavelength conversion layer 63 preferably has a peak emission wavelength at a wavelength of 595 nm to 800 nm, and further has a peak emission wavelength at a wavelength of 610 nm to 750 nm from the viewpoint of improving color purity. It is preferable. Examples of such a wavelength conversion material include cyanine dyes, pyridine dyes, rhodamine dyes, and oxazine dyes.

Specific examples of the cyanine dye include 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran (DCM).
Specific examples of the pyridine dye include 1-ethyl-2- [4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate.
Specific examples of the rhodamine dye include rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, and the like.
Specific examples of the oxazine dye include sulforhodamine 101 and the like.

Specific examples of the inorganic wavelength conversion material used for the red wavelength conversion layer 63 include Y ₂ O ₂ S: Eu ³⁺ , YAlO ₃ : Eu ³⁺ , Ca ₂ Y ₂ (SiO ₄ ) ₆ : Eu ³⁺ , LiY _9. (SiO ₄ ) ₆ O ₂ : Eu ³⁺ , YVO ₄ : Eu ³⁺ , CaS: Eu ³⁺ , Gd ₂ O ₃ : Eu ³⁺ , Gd ₂ O ₂ S: Eu ³⁺ , Y (P, V) O ₄ : Eu ³⁺ Mg ₄ GeO _5.5 F: Mn ⁴⁺ , Mg ₄ GeO ₆ : Mn ⁴⁺ , K ₅ Eu _2.5 (WO ₄ ) _6.25 , Na ₅ Eu _2.5 (WO ₄ ) _6.25 , K ₅ Eu _2.5 (MoO ₄ ) _6.25 , Na ₅ Eu _2.5 (MoO ₄ ) _{6.25, and the} like.

The organic wavelength conversion material used for the green wavelength conversion layer 65 preferably has a peak emission wavelength at a wavelength of 490 nm to 595 nm, and further has a peak emission wavelength at a wavelength of 500 nm to 560 nm from the viewpoint of improving color purity. It is preferable. Examples of such wavelength conversion materials include coumarin dyes or naphthalimide dyes.
Specific examples of the coumarin dye include 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- (2 ′ -Benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzoimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), and the like.
Specific examples of naphthalimide dyes include basic yellow 51, solvent yellow 11 and solvent yellow 116.

Specific examples of inorganic wavelength conversion materials used for the green wavelength conversion layer 65 include (BaMg) Al ₁₆ O ₂₇ : Eu ²⁺ , Mn ²⁺ , Sr ₄ Al ₁₄ O ₂₅ : Eu ²⁺ , (SrBa) Al ₁₂ Si. ₂ O ₈ : Eu ²⁺ , (BaMg) ₂ SiO ₄ : Eu ²⁺ , Y ₂ SiO ₅ : Ce ₃₊ , Tb ³⁺ , Sr ₂ P ₂ O ₇ -Sr ₂ B ₂ O ₅ : Eu ²⁺ , (BaCaMg) ₅ ( PO ₄ ) ₃ Cl: Eu ²⁺ , Sr ₂ Si ₃ O ₈ -2SrCl ₂ : Eu ²⁺ , Zr ₂ SiO ₄ , MgAl ₁₁ O ₁₉ : Ce ³⁺ , Tb ³⁺ , Ba ₂ SiO ₄ : Eu ²⁺ , Sr ₂ SiO ₄ : Eu ²⁺ , and (BaSr) SiO ₄ : Eu ²⁺ .

  The binder material for dispersing the above-described wavelength conversion material is preferably a material that can improve the film forming property of the wavelength conversion layer 60 without deteriorating the light emission characteristics of the wavelength conversion material. The binder material is preferably a resin from the viewpoint of improving the film formability, and a resin having transparency in the wavelength band of the light converted by the wavelength conversion layer 60 from the viewpoint of not reducing the light emission characteristics of the wavelength conversion material. It is preferable that The resin transmittance in the visible light region having a wavelength of 400 nm to 700 nm is preferably 80% or more, and more preferably 95% or more.

  Furthermore, the binder material is preferably a photosensitive resin. By using a photosensitive resin as the binder material, a high-definition wavelength conversion layer can be obtained by a photolithography method.

The photosensitive resin may be a positive photosensitive resin or a negative photosensitive resin. The negative photosensitive resin can significantly reduce the solubility of the obtained wavelength conversion layer 60. Therefore, for example, the wavelength conversion layer 60 having high durability against a process such as a wet process performed after the formation of the wavelength conversion layer 60 can be obtained.
On the other hand, since the positive type photosensitive resin is not irradiated with light on the portion that becomes the wavelength conversion layer 60, it is possible to suppress the deterioration of the wavelength conversion material included in this portion.

  Examples of the photosensitive material containing a negative photosensitive resin include a material or a monomer containing a radical polymerizable group such as a (meth) acrylate group and a photo radical polymerization initiator, a cyclic ether, etc. A material containing a monomer or oligomer having a cationic polymerizable group and a photoacid generator, an anion polymerizable group such as a cyclic ether, a monomer or oligomer having a crosslinkable group capable of crosslinking with a base, and a photobase generator And materials containing monomers and oligomers having functional groups capable of photodimerization such as coumarin or cinnamate.

  Examples of a photosensitive material containing a positive photosensitive resin include a novolak resin or a polymer material such as polyimide and a material containing a diazonaphthoquinone derivative, a carboxyl group protected by a tert-butyl group, or a hydroxyl group. And a material containing a polymer material having a photocleavable site such as a cyclobutane ring or a nitrobenzyl group.

  As the above-described photosensitive material, a material capable of high definition can be arbitrarily selected without lowering the light emission quantum yield and color purity of the wavelength conversion material.

  The content of the wavelength conversion material is preferably 0.01 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the binder material. Excitation light can fully be absorbed as content of a wavelength conversion material is 0.01 mass parts or more. When the content of the wavelength conversion material is 10 parts by mass or less, concentration quenching of the wavelength conversion material can be suppressed, and the wavelength conversion efficiency of the wavelength conversion layer 60 can be increased.

  As a material for forming the wavelength conversion layer 60, in addition to the wavelength conversion material and the binder material described above, an energy transfer material may be included for the purpose of improving the absorption rate and the light emission quantum efficiency of the wavelength conversion layer 60. . The energy transfer material has a function of absorbing excitation light and transferring the excitation energy to the wavelength conversion material by a Forster mechanism to facilitate excitation of the wavelength conversion material. Therefore, the energy transfer material can absorb excitation light, and the energy level in the excited state of the energy transfer material is preferably a material higher than the energy level in the excited state of the wavelength conversion material. The energy transfer material may also serve as the above-described wavelength conversion material or binder material.

  The thickness of the wavelength conversion layer 60 is, for example, 100 nm or more and 100 μm or less, and preferably 1 μm or more and 30 μm or less. If the thickness of the wavelength conversion layer 60 is less than 100 nm, the absorption rate of the excitation light decreases. Moreover, since the material of the wavelength conversion layer 60 will increase more than necessary when the thickness of the wavelength conversion layer 60 exceeds 100 micrometers, cost will become high.

  When the thickness of the wavelength conversion layer 60 is 100 nm or more, the color mixture between the light emitted from the wavelength conversion layer 60 and the excitation light transmitted through the wavelength conversion layer 60 can be reduced. Thereby, the color purity of the light emitted from the wavelength conversion layer 60 can be maintained.

  On the other hand, when the thickness of the wavelength conversion layer 60 is 100 μm or less, the wavelength conversion layer 60 can sufficiently absorb the excitation light. When the thickness of the wavelength conversion layer 60 is 30 μm or less, the wavelength conversion layer 60 is preferable because it can absorb more excitation light. Thereby, the wavelength conversion efficiency in the wavelength conversion board | substrate 100 can be improved.

(Light scattering layer)
In the present embodiment, a light scattering layer 67 is provided for the purpose of improving the viewing angle by scattering the excitation light that has passed through the blue color filter layer 57. The characteristics required for the light scattering layer 67 include a high light scattering property that allows the excitation light to be diffused to a wide viewing angle and emitted to the outside of the wavelength conversion substrate 100. Another characteristic of the light scattering layer 67 is high light transmittance with respect to excitation light from the viewpoint of increasing light extraction efficiency.
In addition, when the light scattering layer 67 is not provided in the blue wavelength conversion part 47, the blue wavelength conversion layer may be provided.

  The material for forming the light scattering layer 67 is not particularly limited as long as it has the above-mentioned required characteristics, and examples thereof include a material in which light-transmitting light scattering particles are dispersed in a light-transmitting binder resin.

  As the light-transmitting binder resin, for example, a photocurable resin having a reactive vinyl group such as an acrylate substituent or a methacrylate substituent, or a thermosetting resin can be used. Examples of the photocurable transparent resin or thermosetting transparent resin include polymethacrylate, polyacrylate, polycarbonate, polyvinyl alcohol, polyvinylpyrrolidone, hydroxyethyl cellulose, carboxymethyl cellulose, polyvinyl chloride resin, melamine resin, phenol resin, alkyd resin, epoxy Examples thereof include resins, polyurethane resins, polyester resins, maleic acid resins, and polyamide resins.

  The light scattering particles may be an inorganic material, an organic material, or a combination of an inorganic material and an organic material.

  As the inorganic material, for example, particles (fine particles) mainly composed of an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony are used. it can. Specific examples include silica beads, alumina beads, titanium oxide beads, zirconia oxide beads, zinc oxide beads, and barium titanate beads.

  As organic materials, for example, polymethyl methacrylate beads, acrylic beads, acrylic-styrene copolymers, melamine, high refractive index melamine, polycarbonate, styrene, cross-linked polystyrene, polyvinyl chloride, benzoguanamine-melamine formaldehyde, silicone and the like are the main components. Particles (fine particles).

  The content of the light scattering particles in the light scattering layer 67 is not particularly limited, and is appropriately adjusted according to a desired viewing angle or the like.

  In order to effectively scatter excitation light by the light scattering layer 67, the light scattering layer 67 is formed of a material in which light scattering particles having a refractive index higher than that of the binder resin are dispersed in the above-described binder resin. Is preferred. Further, since the light scattering intensity generally becomes the largest when the particle diameter of the light scattering particles is about ½ of the wavelength of the excitation light, the particle diameter of the light scattering particles is preferably several hundred nm.

  In the present embodiment, the light scattering particles may be used alone or in combination of two or more. For example, when two types of light scattering particles are used, excitation light can be obtained by using one light scattering particle and the other scattering particle having a smaller particle size and a higher refractive index than the one light scattering particle. Can be scattered more effectively.

[Other parts]
In the wavelength conversion substrate 100 of the first embodiment, a sealing film may be provided on the wavelength conversion layer 60 (not shown). When the wavelength conversion substrate 100 has a sealing film, mixing of oxygen, moisture, and the like into the wavelength conversion layer 60 can be reduced. Thereby, deterioration of the wavelength conversion layer 60 can be reduced. Furthermore, when the wavelength conversion substrate 100 is applied to a display device, it is possible to suppress oxygen and moisture contained in the wavelength conversion layer 60 from reaching each member constituting the display device and deteriorating each member.

  When the above-described sealing film is provided in the wavelength conversion layer 60, a planarizing film may be further provided on the sealing film (not shown). In the case where the wavelength conversion substrate 100 has a planarization film, voids when the wavelength conversion substrate 100 is applied to a display device can be reduced, and adhesion can be improved.

A conventionally known material is used as a material for forming the planarizing film, and may be an inorganic material or an organic material.
Specific examples of the inorganic material include oxides such as silicon oxide and tantalum oxide, and nitrides such as silicon nitride.
As the organic material, for example, a resin similar to the binder resin of the light scattering layer 67 can be used. The planarization film may have a single layer structure or a multilayer structure in which a plurality of layers of different materials are stacked.

[Method of manufacturing wavelength conversion substrate]
Hereinafter, the manufacturing method of the wavelength conversion board concerning a 1st embodiment is explained, referring to drawings. In the drawings, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

  FIG. 2 is a flowchart showing a method for manufacturing the wavelength conversion substrate 100 in the first embodiment. As shown in FIG. 2, the wavelength conversion substrate 100 is manufactured by the black matrix layer 20 forming step S <b> 1, the partition portion 30 forming step S <b> 2, the color filter layer 50 forming step S <b> 3, and the wavelength conversion layer 60. It includes a forming step S4 and a forming step S5 of the light scattering layer 67. Note that the wavelength conversion layer 60 formation step S4 and the light scattering layer 67 formation step S5 do not have to be in this order, and the light scattering layer 67 formation step S5 is performed before the wavelength conversion layer 60 formation step S4. May be.

[Formation Step S1 of Black Matrix Layer 20]
In the formation step S <b> 1 of the black matrix layer 20, the black matrix layer 20 is formed on the one surface 10 a of the substrate 10. The black matrix layer 20 can be formed by a photolithography method.

  First, a photosensitive material containing a pigment is applied to one surface 10a of the substrate 10. The photosensitive material can be applied by, for example, a coating method such as a spin coating method. Moreover, you may wash | clean one surface 10a of the base material 10 as needed before coating. The substrate 10 can be washed using, for example, water, an organic solvent, ultraviolet ozone, or the like.

  Next, the obtained coating film is exposed from the one surface 10a side of the base material 10 through a photomask having a lattice-shaped light shielding portion. For example, when a negative photosensitive material is used, a portion of the photomask where the lattice-shaped light-shielding portion and the coating film do not overlap in plan is cured.

  Next, the exposed coating film is developed to remove the uncured coating film. Specifically, the cured portion of the coating film becomes a lattice-shaped light shielding portion 31, and the portion where the uncured coating film is removed becomes the opening 41. In this way, the black matrix layer 20 is obtained.

  The development of the coating film can be performed using, for example, a known alkaline developer. Specific examples of the alkaline developer include monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, monobutylamine, dibutylamine, monoethanolamine, diethanolamine, triethanolamine. And aqueous liquids such as dimethylaminoethanol, diethylaminoethanol, ammonia, caustic soda, caustic potash, sodium metasilicate, potassium metasilicate, sodium carbonate, tetraethylammonium hydroxide.

  If necessary, the obtained black matrix layer 20 may be washed with water, an aqueous alkali solution, or the like after development.

  Further, in the formation step S1 of the black matrix layer 20, heat treatment such as pre-baking or post-baking may be performed as necessary.

[Partition Step 30 Forming Step S2]
FIG. 3 is a flowchart showing the forming step S2 of the partition portion 30 according to the first embodiment. 4-8 is process drawing in each process of formation process S2 of the partition part 30. FIG. As shown in FIG. 3, the formation step S2 of the partition portion 30 includes the formation step S21 of the first resin layer 330, the first exposure development step S22, the formation step S23 of the first film 350, and the second film 370. Forming step S24 and second exposure development step S25. Each layer constituting the partition portion 30 can be formed by a photolithography method, similarly to the black matrix layer 20.

(Formation process S21 of the 1st resin layer 330)
FIG. 4 is a process diagram showing a formation process S21 of the first resin layer 330 according to the first embodiment. As shown in FIG. 4, in the formation step S <b> 21 of the first resin layer 330, the first resin layer 330 is formed so as to cover the black matrix layer 20 on one surface 10 a of the substrate 10. Here, the 1st resin layer 330 points out the member used as the barrier 33 in 1st exposure development process S22 of the latter.

  Specifically, a positive photosensitive material (positive photosensitive resin) is applied to one surface 10a of the substrate 10. The positive photosensitive material can be applied by the same coating method as in the formation step S1 of the black matrix layer 20. Thus, the 1st resin layer 330 which uses a positive photosensitive material as a forming material is obtained.

  In addition, in formation process S21 of the 1st resin layer 330, you may perform heat processing, such as prebaking, as needed.

(First exposure development step S22)
FIG. 5 is a process diagram showing a first exposure / development process S22 according to the first embodiment. As shown in FIG. 5, in the first exposure / development step S <b> 22, the barrier 33 is formed on the lattice-shaped light shielding portion 31 in the black matrix layer 20.

  First, the 1st resin layer 330 is exposed from the other surface 10b side of the base material 10 shown in FIG. 4, and the 1st resin layer 330 formed on the opening part 41 is exposed.

  Next, the exposed first resin layer 330 is developed, and the exposed first resin layer 330 is removed. The development of the first resin layer 330 can be performed using the same developer as in the black matrix layer 20 formation step S1. In this way, the barrier 33 is obtained.

  If necessary, the obtained barrier 33 may be washed with water, an aqueous alkali solution, or the like after development.

  In the first exposure and development step S22, heat treatment such as post baking may be performed as necessary.

  According to the first exposure / development step S22, the barrier 33 is formed using a photolithography method using self-alignment, so that the positional deviation between the light shielding portion 31 and the barrier 33 can be reduced. Even a wavelength conversion substrate having a light shielding portion 31 and a barrier 33 as shown in FIG. 5 can be applied to a display device. In the first exposure and development step S22, since a photomask is not used in the first place, it is not necessary to align the photomask, which is efficient.

(Formation step S23 of the first film 350)
FIG. 6 is a process diagram showing the formation process S23 of the first film 350 according to the first embodiment. As shown in FIG. 6, in the formation process S23 of the first film 350, the first film 350 is formed along the surface of the base material 10 on which the barrier 33 is formed. Here, the 1st film | membrane 350 points out the member used as the photosensitive resin layer 35 in 2nd exposure development process S25 of the latter.

  Specifically, a positive photosensitive material (positive photosensitive resin) is applied to the surface of the base material 10 on which the barrier 33 is formed. For the application of the positive photosensitive material, for example, a spin coating method or a spray coating method is preferable because the first film 350 can be formed to be thin. In this way, the first film 350 using a positive photosensitive material as a forming material is obtained.

  In the formation step S23 of the first film 350, heat treatment such as pre-baking may be performed as necessary.

(Formation Step S24 of Second Film 370)
FIG. 7 is a process diagram showing the formation process S24 of the second film 370 according to the first embodiment. As shown in FIG. 7, in the formation step S <b> 24 of the second film 370, the second film 370 is formed along the surface 350 a of the first film 350. Here, the 2nd film | membrane 370 points out the member used as the functional layer 37 in 2nd exposure development process S25 of the latter.

  The second film can be formed by a known vapor deposition method such as a thermal vapor deposition method, a plating method, or a sputtering method. Among these vapor deposition methods, the thermal vapor deposition method is preferable because of its low cost and simplicity.

(Second exposure development step S25)
FIG. 8 is a process diagram showing a second exposure / development process S25 according to the first embodiment. As shown in FIG. 8, in the second exposure development step S <b> 25, a photosensitive resin layer 35 provided on the surface of the barrier 33 and a functional layer 37 provided on the surface of the photosensitive resin layer 35 are formed.

  First, the 1st film | membrane 350 is exposed from the other surface 10b side of the base material 10 shown in FIG. 7, and the 1st film | membrane 350 formed on the opening part 41 is exposed.

  Next, the exposed first film 350 is developed to remove the exposed first film 350. At this time, the developer penetrates a minute gap existing in the second film 370 and reaches the first film 350. Accordingly, the exposed first film 350 is developed, and at the same time, the second film 370 formed on the exposed first film 350 can be removed. On the other hand, the first film 350 that is shielded from light by the light-shielding portion 31 and not exposed to light remains on the substrate 10 together with the second film 370 on the first film 350. The development of the first film 350 can be performed using the same developer as in the first exposure development step S22. In this way, the photosensitive resin layer 35 and the functional layer 37 are obtained.

  If necessary, the obtained photosensitive resin layer 35 and functional layer 37 may be washed with water, an aqueous alkaline solution, or the like after development.

[Color Filter Layer 50 Formation Step S3]
Returning to FIG. 2, in the color filter layer 50 forming step S <b> 3, the color filter layer 50 is formed on the opening 41. The color filter layer 50 can be formed by, for example, a dyeing method, a photolithography method, a printing method, an electrodeposition method, or the like. Among these methods, a photolithography method is preferable because a high-definition color filter layer 50 can be obtained. Hereinafter, although the formation of the color filter layer 50 by the photolithography method will be described, the present embodiment is not limited to this.

  In the formation step S3 of the color filter layer 50, for example, a red color filter layer 53, a green color filter layer 55, and a blue color filter layer 57 are formed in this order. The order of forming the red color filter layer 53, the green color filter layer 55, and the blue color filter layer 57 is not limited to this.

  First, a negative photosensitive material containing a red pigment is applied to the surface of the base material 10 on which the partition portion 30 is formed. The negative photosensitive material containing the red pigment can be applied by the same coating method as in the formation step S1 of the black matrix layer 20.

  Next, the coating film on the opening 41 forming the red wavelength conversion unit 43 is exposed and cured through a photomask.

  Next, the exposed coating film is developed to remove the uncured coating film. The development of the coating film can be performed using the same developer as in the black matrix layer 20 formation step S1. In this way, a red color filter layer 53 is obtained.

  If necessary, the obtained red color filter layer 53 may be washed with water, an aqueous alkaline solution, or the like after development.

  The green color filter layer 55 and the blue color filter layer 57 can be formed in the same manner as the red color filter layer 53 except that a green pigment and a blue pigment are used instead of the red pigment.

  In addition, in the color filter layer 50 forming step S3, heat treatment such as pre-baking or post-baking may be performed as necessary.

[Formation Step S4 of Wavelength Conversion Layer 60]
In the formation step S <b> 4 of the wavelength conversion layer 60, the wavelength conversion layer 60 is formed on the obtained color filter layer 50. The wavelength conversion layer 60 can be formed by, for example, a printing method such as a photolithography method, a wet etching method, an ink jet method, a laser thermal transfer method, or the like. Among these methods, since the wavelength conversion layer 60 can be formed efficiently and accurately, the photolithography method is preferable, and the photolithography method using self-alignment is more preferable. Hereinafter, although the formation of the wavelength conversion layer 60 by the photolithography method will be described, the present embodiment is not limited to this.

  In the formation step S4 of the wavelength conversion layer 60, for example, the red wavelength conversion layer 63 and the green wavelength conversion layer 65 are formed in this order. The order of forming the red wavelength conversion layer 63 and the green wavelength conversion layer 65 is not limited to this.

  First, a photosensitive material containing a predetermined wavelength conversion material is applied so as to cover the surface of the substrate 10 on which the color filter layer is formed. Here, the predetermined wavelength conversion material refers to a material that converts excitation light from an excitation light source described later into red light. The photosensitive material can be applied by spin coating or vapor deposition.

  Next, the coating film formed other than the red color filter layer 53 is exposed and exposed through a photomask.

  Next, the exposed coating film is developed to remove the exposed coating film. The development of the coating film can be performed using the same developer as in the black matrix layer 20 formation step S1. In this way, the red wavelength conversion layer 63 is obtained.

  If necessary, the obtained red wavelength conversion layer 63 may be washed with water, an aqueous alkali solution, or the like after development.

  Note that unnecessary regions formed other than the red color filter layer 53 may be removed by etching instead of development.

  Examples of methods other than those described above include a method of irradiating an unnecessary region formed other than the red color filter layer 53 with light and fading the wavelength conversion material. According to this method, the choice of the binder material is wide, and for example, a binder material having a high film forming property can be selected.

  The green wavelength conversion layer 65 can be formed by the same method as the red wavelength conversion layer 63 except that a wavelength conversion material that converts excitation light into green light is used.

[Formation Step S5 of Light Scattering Layer 67]
In the light scattering layer 67 formation step S <b> 5, the light scattering layer 67 is formed on the obtained blue color filter layer 57. The light scattering layer 67 can be formed by, for example, a photolithography method. Specifically, the light scattering layer 67 can be formed by the same method as the red wavelength conversion layer 63 except that, for example, titanium oxide fine particles are used instead of the wavelength conversion material.

  As described above, the wavelength conversion substrate 100 of the first embodiment is obtained.

[Display device]
Hereinafter, an organic electroluminescence display device (hereinafter referred to as “organic EL display device”) will be described as an example of the display device of the first embodiment, but the present embodiment is not limited to this. FIG. 9 is a schematic cross-sectional view showing an arrangement example of the display device 1000 according to the first embodiment.

The organic EL display device 1000 of the first embodiment includes the above-described wavelength conversion substrate 100 and the organic EL element substrate 500 provided on the one surface 10a side of the base material 10.
In FIG. 9, the organic EL element substrate 500 and the wavelength conversion substrate 100 are separated from each other for easy understanding of the state of wavelength conversion in the wavelength conversion substrate 100.

  The organic EL element substrate 500 includes an organic EL element having a substrate 501, a thin film transistor 502, an interlayer insulating layer 503, an anode 505, an organic EL layer 506, and a cathode 507.

  A thin film transistor 502 is provided over one surface 501 a of the substrate 501, and an interlayer insulating layer 503 is provided over the thin film transistor 502. The thin film transistor 502 includes a drain electrode 502a, a source electrode 502b, a semiconductor layer 502c, a gate electrode 502d, and a gate insulating layer 502e.

  In the interlayer insulating layer 503, a contact hole 504 is provided in a portion on the drain electrode 502a. An anode 505 provided over the interlayer insulating layer 503 is electrically connected to the drain electrode 502a through the contact hole 504.

  An organic EL layer 506 is provided on the anode 505, and a cathode 507 is provided on the organic EL layer 506.

  In FIG. 9, one thin film transistor 502 is illustrated for one wavelength conversion unit 40 due to space limitations, but in order to drive the organic EL layer 506 stably and efficiently, 1 A plurality of thin film transistors 502 may be provided for each wavelength conversion unit 40.

As a material for forming the substrate 501, for example, an inorganic material such as glass or quartz is used.
The thickness of the substrate 501 is preferably 100 μm or more and 1000 μm or less.

Examples of a material for forming the semiconductor layer 502c include amorphous silicon, polycrystalline silicon, an organic semiconductor, an inorganic oxide, and the like.
Specific examples of the organic semiconductor include pentacene, polythiophene, fullerene C60, and the like.
Specific examples of the inorganic oxide include indium-gallium-zinc oxide.

  The thickness of the semiconductor layer 502c is preferably 20 nm or more and 200 nm or less.

  As a specific example of a material for forming the drain electrode 502a and the source electrode 502b, a material for forming the semiconductor layer 502c can be doped with an impurity element such as phosphorus. Another example is a metal such as gold, silver, copper, or aluminum. The material for forming the source electrode 502b and the drain electrode 502a may be the same or different.

  The thicknesses of the drain electrode 502a and the source electrode 502b are preferably 10 nm or more and 500 nm or less. The thicknesses of the drain electrode 502a and the source electrode 502b may be the same or different.

As a formation material of the gate electrode 502d, for example, a metal, an organic compound, or the like can be given.
Specific examples of the metal include gold, platinum, silver, copper, aluminum, tantalum, and doped silicon.
Specific examples of the organic compound include 3,4-polyethylenedioxythiophene (PEDOT) or polystyrene sulfonate (PSS).

  The thickness of the gate electrode 502d is preferably 20 nm or more and 200 nm or less.

The material for forming the gate insulating layer 502e may be an inorganic compound or an organic compound.
Specific examples of the inorganic compound include silicon nitride and silicon oxide.
Specific examples of the organic compound include cycloten, cytop or parylene.

  The thickness of the gate insulating layer 502e is preferably greater than or equal to 50 nm and less than or equal to 300 nm.

The material for forming the interlayer insulating layer 503 may be an inorganic compound or an organic compound.
Specific examples of the inorganic compound include silicon nitride and silicon oxide.
Specific examples of the organic compound include cycloten, cytop or parylene.

  The thickness of the interlayer insulating layer 503 is preferably 100 nm or more and 2000 nm or less.

The anode 505 is configured by laminating a transparent electrode 505A and a reflective electrode 505B. The reflective electrode 505B is provided closer to the one surface 501a of the substrate 501 than the transparent electrode 505A.
Examples of a material for forming the transparent electrode 505A include indium oxide-zinc oxide (IZO). Examples of a material for forming the reflective electrode 505B include silver and aluminum.

  The thickness of the transparent electrode 505A is preferably 10 nm or more and 100 nm or less. The thickness of the reflective electrode 505B is preferably 10 nm or more and 1000 nm or less.

  The organic EL layer 506 is formed by laminating a hole injection layer, a hole transport layer, a blue light emitting layer, a hole block layer, an electron transport layer, an electron injection layer, and the like. Each layer constituting the organic EL layer 506 is appropriately selected as necessary.

  The thickness of each layer constituting the organic EL layer 506 is preferably 0.5 nm or more and 200 nm or less.

Examples of the material for forming the cathode 507 include a single metal or an alloy.
Specific examples of the single metal include silver and aluminum.
Specific examples of the alloy include magnesium silver and aluminum lithium.
The cathode 507 may have a single-layer structure or a multilayer structure in which a plurality of layers having different compositions are stacked.

  The thickness of the cathode 507 is preferably 10 nm or more and 1000 nm or less.

In the organic EL display device 1000, excitation light (blue light) L ¹ emitted from the organic EL element substrate 500 enters the wavelength conversion substrate 100. A part of the excitation light L ¹ is converted into red light L ¹¹ by the red wavelength conversion layer 63. Similarly, part of the excitation light L ¹ is converted into green light L ¹² by the green wavelength conversion layer 65. The remainder of the excitation light L ¹ passes through the light scattering layer 67. The red light L ¹¹ , the green light L ¹² , and the blue light L ^{13 that} has passed through the light scattering layer 67 are emitted from the base material 10 side of the wavelength conversion substrate 100.

  As described above, as the organic EL display device according to the first embodiment, the example in which the organic EL element substrate 500 is provided on the one surface 10a side of the base material 10 has been described, but the present embodiment is not limited thereto. For example, the organic EL element substrate 500 may be provided on the other surface 10 b side of the base material 10.

Second Embodiment
[Method of manufacturing wavelength conversion substrate]
FIG. 10 is a process diagram showing the formation process S24 of the second film 371 according to the second embodiment. As shown in FIG. 10, in the formation step S24 of the second film 371, the second film 371 may be formed through the photomask 200 that covers a part of the first film 350 formed in the opening 41. . The formation of the second film 371 can be performed by a vapor deposition method similar to the formation of the second film 370.

  According to this method, the second film 371 is not formed in a portion where the photomask 200 and the first film 350 overlap in a plane, and the first film 350 is exposed. That is, the second film 371 has a discontinuous portion 371 a formed discontinuously on the surface 350 a of the first film 350. Accordingly, in the subsequent second exposure development step S25, the developer can easily enter the first film 350 from the discontinuous portion 371a, and can be developed efficiently.

  Note that the discontinuous portion 371a only needs to be formed at any position of the opening 41, so that the alignment of the photomask 200 does not require high accuracy and can be efficiently manufactured.

  According to the method for manufacturing a wavelength conversion substrate as described above, the partition portion is formed by using a photolithography method utilizing self-alignment, and therefore, it is possible to reduce misalignment of each layer constituting the partition portion 30. it can. Therefore, the wavelength conversion substrate can be manufactured efficiently and with high accuracy. Moreover, the obtained wavelength conversion board | substrate can be set as the structure excellent in high definition and light extraction efficiency.

  According to the wavelength conversion substrate having the above configuration, a wavelength conversion substrate having high definition and excellent light extraction efficiency can be obtained.

  According to the display device configured as described above, since the above-described wavelength conversion substrate is provided, a display device having high definition and excellent brightness can be obtained.

<Third Embodiment>
[Method of manufacturing wavelength conversion substrate]
Hereinafter, the manufacturing method of the wavelength conversion board in a 3rd embodiment is explained, referring to drawings. In the manufacturing method of the wavelength conversion board in the second embodiment, the step of forming the partition portion 30 is different from that in the first embodiment. Therefore, description of the whole manufacturing method of a wavelength conversion board is abbreviate | omitted, and only the formation process of the partition part 30 is demonstrated.

[Partition Step 30 Forming Step S120]
FIG. 11 is a flowchart showing the forming step S120 of the partition section 30 according to the third embodiment. 12-14 is process drawing which shows the main processes of formation process S120 of the partition part 30. FIG.
12 to 14, the same components as those illustrated in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 11, the formation process S120 of the partition part 30 in 3rd Embodiment is equipped with the process similar to 1st Embodiment. Further, in the third embodiment, a third exposure development step S121 is included between the formation step S23 of the first film 350 and the formation step S24 of the second film 372.

(Third exposure development step S121)
FIG. 12 is a process diagram showing exposure in the third exposure development step S121 according to the third embodiment. FIG. 13 is a process diagram illustrating after the development in the third exposure development process S121 according to the third embodiment. In the third exposure / development step S <b> 121, a portion where the thickness of the first film 350 is different is formed in the opening 41.

  First, as shown in FIG. 12, a part of the first film 350 formed in the opening 41 is exposed from the one surface 10 a side of the substrate 10 using the photomask 201.

  Next, the exposed first film 350 is developed. At this time, as shown in FIG. 13, only a part of the exposed first film 350 in the thickness direction is removed. As a result, a recess 350 b is formed in the first film 350. The third exposure development step S121 is performed using a developer having a lower developing power than the subsequent second exposure development step S25. As another method, the third exposure development step S121 is performed with a shorter development time than the subsequent second exposure development step S25. For example, the third exposure development step S121 can be performed using a developer having a lower concentration than the developer used in the second exposure development step S25.

  In addition, since the recessed part 350b should just be formed in the position of the opening part 41, the alignment of the photomask 201 does not require high precision.

(Formation step S24 of the second film 372)
FIG. 14 is a process diagram showing the formation process S24 of the second film 372 according to the third embodiment. As shown in FIG. 14, in the formation step S24 of the second film 372, the second film 372 is formed along the surface 350a of the first film 350. The second film 372 can be formed by a vapor deposition method similar to that for the second film 370. At this time, the second film 372 is not formed in the recess 350b of the first film 350, and the first film 350 is exposed. Accordingly, in the subsequent second exposure development step S25, the developer can easily enter the first film 350, and development can be efficiently performed.

  In the method for manufacturing a wavelength conversion substrate in the third embodiment, the same effect as in the first embodiment can be obtained.

<Fourth embodiment>
[Method of manufacturing wavelength conversion substrate]
Hereinafter, the manufacturing method of the wavelength conversion board in a 4th embodiment is explained, referring to drawings. In the manufacturing method of the wavelength conversion board in the fourth embodiment, the step of forming the partition portion 30 is different from that in the first embodiment. Therefore, description of the whole manufacturing method of a wavelength conversion board | substrate is abbreviate | omitted, and only the formation process of the partition part 30 is demonstrated.

[Partition Step 30 Forming Step S220]
FIG. 15 is a flowchart showing the forming step S220 of the partition section 30 according to the fourth embodiment. FIGS. 16-19 is process drawing which shows the main processes of formation process S220 of the partition part 30. FIG.
16 to 19, the same components as those illustrated in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

  The formation process S220 of the partition part 30 in 4th Embodiment is equipped with the process similar to 1st Embodiment. In the fourth embodiment, the formation process S24 of the second film 370 in the first embodiment includes the formation process S221 of the shadow part forming member 71 and the formation process S222 of the second film 373.

(Shaping part forming member 71 forming step S221)
In the shadow forming member 71 forming step S <b> 221, the shadow forming member 71 is formed in the opening 41. The shadow part forming member 71 can be formed by a transfer method or a photolithography method. Hereinafter, formation of the shadow portion forming member 71 by photolithography will be described, but the present embodiment is not limited to this.

  First, the second resin layer 710 is formed so as to cover the black matrix layer 20, the barrier 33, and the first film 350 on one surface 10 a of the substrate 10. FIG. 16 is a process diagram showing coating of the second resin layer 710 according to the fourth embodiment. Here, the 2nd resin layer 710 points out the member used as the shadow part formation member 71 in a next process.

  Specifically, as shown in FIG. 16, a negative photosensitive material is applied to one surface 10 a of the substrate 10. As the negative photosensitive material, a material that dissolves the already formed first film 350 and has a low possibility of mixing is selected. The negative photosensitive material can be applied by the same coating method as in the formation step S1 of the black matrix layer 20. In this way, the second resin layer 710 using the negative photosensitive material as a forming material is obtained.

  Next, a part of the second resin layer 710 formed in the opening 41 is exposed and cured from the one surface 10a side of the substrate 10 using the photomask 202. FIG. 17 is a process diagram showing exposure of the second resin layer 710 according to the fourth embodiment.

  Next, the exposed second resin layer 710 is developed, and the uncured second resin layer 710 is removed. FIG. 18 is a process diagram illustrating after the development of the exposed second resin layer 710 according to the fourth embodiment. Thus, the shadow part forming member 71 is obtained. In addition, since the shadow part formation member 71 should just be formed in any position of the opening part 41, the alignment of the photomask 202 does not require high precision, and can be produced efficiently.

  The development of the second resin layer 710 can be performed, for example, by dissolution and removal using an organic solvent. Specific examples of the organic solvent include N-methylpyrrolidone, γ-butyrolactone, propylene glycol methyl ether, propylene glycol methyl ether acetate or cyclohexanone.

  If necessary, the obtained shadow forming member 71 may be washed with an organic solvent such as alcohol, for example, after development.

  The shadow forming member 71 has a portion where an angle θ formed by the side surface 71a of the shadow forming member 71 and the surface 350a of the first film 350 is an acute angle or a right angle. Further, the shadow portion forming member 71 is formed so as not to overlap the lattice-shaped light shielding portion 31 in a planar manner.

  In addition, at the time of exposure of the 2nd resin layer 710, the light from an exposure source may be irradiated diagonally with respect to the base material 10. At this time, the obtained shadow forming member 71 is asymmetric with respect to the normal line of the base material 10 and is inclined with respect to the base material 10.

  Moreover, in formation process S221 of the shadow part forming member 71, you may perform heat processing, such as prebaking and post-baking, as needed.

(Formation step S222 of the second film 373)
FIG. 19 is a process diagram showing the formation process S222 of the second film 373 according to the fourth embodiment. As shown in FIG. 19, in the formation step S <b> 222 of the second film 373, the second film 373 is formed on the one surface 10 a of the base material 10 on which the shadow part forming member 71 is formed. The formation of the second film 373 can be performed by a vapor deposition method similar to the formation of the second film 370.

  According to this method, the second film 373 is not formed in the portion where the shadow portion forming member 71 and the first film 350 are planarly overlapped, and the first film 350 is exposed. That is, the second film 373 has a discontinuous portion 373a formed discontinuously on the surface 350a of the first film 350. Accordingly, in the subsequent second exposure development step S25, the developer can easily enter the first film 350 from the discontinuous portion 373a, and development can be efficiently performed.

  The same effects as those of the first embodiment can also be obtained in the method for manufacturing a wavelength conversion substrate in the fourth embodiment.

<Fifth Embodiment>
[Method of manufacturing wavelength conversion substrate]
Hereinafter, the manufacturing method of the wavelength conversion board in a 5th embodiment is explained, referring to drawings. In the manufacturing method of the wavelength conversion board in the fifth embodiment, the step of forming the partition portion 30 is different from that in the first embodiment. Therefore, description of the whole manufacturing method of a wavelength conversion board is abbreviate | omitted, and only the formation process of the partition part 30 is demonstrated.

FIG. 20 is a flowchart showing the forming step S320 of the partition section 30 according to the fifth embodiment. FIG. 21 to FIG. 27 are process diagrams showing main processes of the partition part 30 formation process S320.
21 to 27, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

  The partition unit 30 formation step S320 in the fifth embodiment includes a first resin layer 330 formation step S21 and a first exposure development step S22, as in the first embodiment. In the fifth embodiment, after the first exposure development step S22, the third film 351 formation step S321, the fourth exposure development step S322, the second film 374 formation step S323, and the fourth film 390 formation step S324. A fifth exposure development step S325 and a functional layer 37 formation step S326.

(Formation Step S321 of Third Film 351)
FIG. 21 is a process diagram showing the formation process S321 of the third film 351 according to the fifth embodiment. As shown in FIG. 21, in the third film 351 formation step S321, the third film 351 is formed along the surface of the base material 10 on which the barrier 33 is formed. Here, the third film 351 refers to a member that becomes the photosensitive resin layer 35 in the subsequent fourth exposure and development step S322.

  Specifically, a negative photosensitive material (negative photosensitive resin) is applied to the surface of the base material 10 on which the barrier 33 is formed. The negative photosensitive material can be applied by the same coating method as in the formation step S1 of the black matrix layer 20. In this way, the third film 351 is obtained using a negative photosensitive material as a forming material.

  Note that in the formation step S321 of the third film 351, heat treatment such as pre-baking may be performed as necessary.

(Fourth exposure development step S322)
In the fourth exposure and development step S322, the photosensitive resin layer 35 provided on the surface of the barrier 33 is formed.

  FIG. 22 is a process diagram showing exposure in the fourth exposure development step S322 according to the fifth embodiment. As shown in FIG. 22, first, the third film 351 formed on the surface of the barrier 33 is exposed and cured from the one surface 10 a side of the substrate 10 through the photomask 203.

  Next, the exposed third film 351 is developed to remove the uncured third film 351. FIG. 23 is a process diagram showing after development in the fourth exposure development process S322 according to the fifth embodiment. In this way, the photosensitive resin layer 35 is obtained.

  The development of the third film 351 can be performed using the same developer as in the black matrix layer 20 formation step S1.

  If necessary, the obtained photosensitive resin layer 35 may be washed with water, an aqueous alkali solution, or the like after development.

  In the fourth exposure and development step S322, heat treatment such as post baking may be performed as necessary.

(Formation step S323 of the second film 374)
In the formation step S323 of the second film 374, the second film 374 is formed on the photosensitive resin layer 35 and the opening 41. The second film 374 can be formed by a vapor deposition method similar to that for the second film 370.

(Formation process S324 of the fourth film 390)
FIG. 24 is a process diagram illustrating the formation process S324 of the fourth film 390 according to the fifth embodiment. As shown in FIG. 24, in the formation step S324 of the fourth film 390, the fourth film 390 is formed along the surface of the second film 374. Here, the 4th film | membrane 390 points out the member used as the protective layer 39 in subsequent 5th exposure image development process S325. The protective layer 39 is formed for the purpose of protecting the surface of the second film 374.

  Specifically, a positive photosensitive material (positive photosensitive resin) is applied to the surface of the second film 374. The positive photosensitive material can be applied by the same coating method as in the formation step S1 of the black matrix layer 20. In this way, the fourth film 390 is formed using a positive photosensitive material as a forming material.

  Note that in the formation step S321 of the third film 351, heat treatment such as pre-baking may be performed as necessary.

(Fifth exposure development step S325)
In the fifth exposure development step S325, a protective layer 39 that protects the surface of the second film 374 provided on the barrier 33 is formed.

  FIG. 25 is a process diagram showing exposure in the fifth exposure development step S325 according to the fifth embodiment. As shown in FIG. 25, first, the fourth film 390 formed in the opening 41 is exposed and exposed from the one surface 10a side of the substrate 10 through the photomask 204.

  FIG. 26 is a process diagram showing after development in the fifth exposure development process S325 according to the fifth embodiment. As shown in FIG. 26, the exposed fourth film 390 is developed, and the exposed fourth film 390 is removed. The development of the fourth film 390 can be performed using the same developer as in the first exposure development step S22. In this way, the protective layer 39 is obtained.

  If necessary, the obtained protective layer 39 may be washed with water, an aqueous alkali solution, or the like after development.

  In the fifth exposure development step S325, heat treatment such as post-baking may be performed as necessary.

(Functional layer 37 formation step S326)
In the formation step S326 of the functional layer 37, the functional layer 37 provided on the surface of the photosensitive resin layer 35 is formed.

  FIG. 27 is a process diagram illustrating etching in the formation process S326 of the functional layer 37 according to the fifth embodiment. As shown in FIG. 27, first, the second film 374 formed in the opening 41 is removed by etching. Etching of the second film 374 can be performed using a known etching solution. If necessary after etching, the acid component on the opening 41 may be reduced by washing or the like.

  Next, the protective layer 39 is removed by dissolving it in, for example, an organic solvent. In this way, the functional layer 37 is obtained. This organic solvent is a solvent in which the protective layer 39 is soluble, and examples thereof include acetone.

  In the method for manufacturing a wavelength conversion substrate in the fifth embodiment, the same effect as in the first embodiment can be obtained.

  As mentioned above, although embodiment of this invention was described, each structure and those combination in this embodiment are examples, and addition, abbreviation | omission, substitution, and other of a structure are within the range which does not deviate from the meaning of this invention. It can be changed. Further, the present invention is not limited by the embodiment.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited at all by these examples.

[Example 1 (Manufacture of barrier 33)]
A glass substrate having a thickness of 0.7 mm was prepared as the substrate 10. One surface 10a of the substrate 10 was washed with ultraviolet ozone, and an acrylate black photoresist was applied by a spin coating method. The obtained coating film was air-dried for 20 minutes and then pre-baked at 90 ° C. for 60 seconds using a hot plate.

Next, the coating film after pre-baking was exposed from the one surface 10a side of the base material 10 through the photomask which has a grid-shaped light-shielding part. At this time, the light of 365 nm was irradiated so that the exposure amount was 100 mJ / cm ² . Furthermore, using the aqueous solution whose density | concentration of tetramethylammonium hydroxide (TMAH) is 0.1 mass% as a developing solution, the coating film after exposure was developed for 30 to 60 seconds, and the black matrix layer 20 was obtained. .

  Furthermore, the obtained black matrix layer 20 was post-baked at 220 ° C. using an oven in a nitrogen atmosphere. In this way, the black matrix layer 20 was obtained on the one surface 10a of the base material 10.

  A polyimide-based positive photoresist was applied to one surface 10a of the base material 10 on which the black matrix layer 20 was formed at a rotational speed of 1800 rpm by a spin coating method to obtain a first resin layer 330. This was prebaked at 90 ° C. for 3 minutes using a hot plate.

Next, the first resin layer 330 was exposed from the other surface 10b side of the substrate 10. At this time, 365 nm light was irradiated so that the exposure amount was 300 mJ / cm ² . Furthermore, the first resin layer 330 after exposure was developed twice for 60 seconds each time using an aqueous solution having a TMAH concentration of 1.5 mass% as a developer, whereby a barrier 33 was obtained. Further, the obtained barrier 33 was washed with water for 60 seconds.

  Furthermore, the obtained barrier 33 was post-baked for 1 hour at 200 ° C. using an oven in a nitrogen atmosphere. In this way, the barrier 33 was obtained on the lattice-shaped light shielding portion 31.

The following materials were used as an acrylate black photoresist and a polyimide positive photoresist.
Acrylate black photoresist: BK-8310, manufactured by Tokyo Ohka Kogyo Co., Ltd. Polyimide positive photoresist: Photo Nice (registered trademark) PW-2100, manufactured by Toray Industries, Inc.

  The cross section of the obtained barrier 33 was observed with a scanning electron microscope (SEM). As a result, the barrier 33 has a substantially symmetrical shape, and no displacement between the light shielding portion 31 and the barrier 33 was confirmed.

[Example 2 (Manufacture of wavelength conversion substrate according to first embodiment)]
A positive photoresist of polymethylglutarimide was applied to the surface of the base material 10 of Example 1 by a spray method to obtain a first film 350. The obtained first film 350 was pre-baked at 90 ° C. for 60 seconds using a hot plate.

Next, aluminum was vapor-deposited at a vacuum degree of 4.2 × 10 ⁻⁴ Pa along the surface 350a of the first film 350 by a thermal vapor deposition method to obtain a second film 370. The thickness of the obtained second film was about 200 nm.

Further, the first film 350 was exposed from the other surface 10b side of the substrate 10. At this time, irradiation with 193 nm light was performed so that the exposure amount was 300 mJ / cm ² . Further, the first film after exposure was developed for 60 seconds using an aqueous solution having a TMAH concentration of 2.38% by mass as a developer. Thus, the partition part 30 in which the photosensitive resin layer 35 and the functional layer 37 were laminated on the barrier 33 was obtained.

The following materials were used as positive type photoresists.
Positive photoresist: Polymethylglutarimide (PMGI), manufactured by MicroChem

  The cross section of the obtained partition part 30 was observed with SEM. As a result, no displacement was confirmed between the layers constituting the partition part 30.

A pigment dispersion resist in which a red pigment was dispersed was applied to the surface of the base material 10 on which the partition part 30 was formed by a spin coating method. Next, the coating film on the opening 41 forming the red wavelength conversion portion 43 was exposed with a photomask. At this time, 365 nm light was irradiated so that the exposure amount was 200 mJ / cm ² . Further, the exposed coating film was developed for 60 seconds using a developer diluted 100 times to obtain a red color filter layer 53. Further, the obtained red color filter layer 53 was post-baked for 1 hour at 200 ° C. using an oven in a nitrogen atmosphere. In this way, a red color filter layer 53 was obtained on the opening 41 that forms the red wavelength conversion portion 43.

  The green color filter layer 55 and the blue color filter layer 57 were formed in the same manner as the red color filter layer 53 except that a pigment dispersion resist in which a green pigment and a blue pigment were dispersed instead of a red pigment was used.

The following materials were used for the red, green and blue pigment dispersion resists and developers.
Red, green and blue pigment dispersion resist: OPTMER, manufactured by JSR Corporation Developer: CD-150CR, manufactured by JSR Corporation

A mixture of an acrylic positive photoresist and coumarin 6 was sonicated to prepare a photoresist having a wavelength conversion material concentration of 2 mass%. The obtained photoresist was filtered through a 0.2 μm filter to remove insolubles. This was applied by spin coating to the surface of the substrate 10 on which the color filter layer 50 was formed. Next, the coating film formed other than the red color filter layer 53 was exposed through a photomask. At this time, 365 nm light was irradiated so that the exposure amount was 50 mJ / cm ² . Furthermore, using the aqueous solution whose TMAH density | concentration is 2.38 mass% as a developing solution, the coating film after exposure was developed for 90 second, and the red wavelength conversion layer 63 was obtained. Further, the obtained red wavelength conversion layer 63 was washed with water for 60 seconds. In this way, a red wavelength conversion layer 63 was obtained on the red color filter layer 53.

  The green wavelength conversion layer 65 was formed in the same manner as the red wavelength conversion layer 63 except that instead of coumarin 6, lumogen red and coumarin 6 were mixed at a mass ratio of 3: 1.

The following materials were used for the acrylic positive photoresist.
Acrylic positive photoresist: LIXON COAT PIF-4000, manufactured by JNC Corporation

(Formation of light scattering layer 67)
The light scattering layer 67 was formed by the same method as the red wavelength conversion layer 63 except that titanium oxide fine particles were used instead of the coumarin 6. Thus, the wavelength conversion substrate of Example 1 was obtained.

[Example 3 (Manufacture of wavelength conversion substrate according to second embodiment)]
A wavelength conversion substrate of Example 2 was fabricated in the same manner as in Example 1 except that the second film 371 was formed through the mask 200 covering a part of the first film 350 formed in the opening 41. .

  Similarly to Example 2, the cross section of the obtained partition part 30 was observed by SEM. As a result, also in Example 3, no displacement was confirmed between the layers constituting the partition portion 30.

[Example 4 (Manufacture of wavelength conversion substrate according to third embodiment)]
A wavelength conversion substrate of Example 3 was manufactured in the same manner as in Example 1 except that the following operation was performed after forming the first film 350 until forming the second film 372.

First, a part of the first film 350 formed in the opening 41 was exposed from the one surface 10 a side of the base material 10 using a photomask 201. At this time, the light of 365 nm was irradiated so that the exposure amount was 100 mJ / cm ² .

  Next, the first film 350 after exposure is developed for 60 seconds using an aqueous solution having a TMAH concentration of 1.5 mass% as a developer, and the opening 41 has a portion where the thickness of the first film 350 is different. Formed.

  Similarly to Example 2, the cross section of the obtained partition part 30 was observed by SEM. As a result, also in Example 4, no displacement was confirmed between the layers constituting the partition portion 30.

[Example 5 (Manufacture of wavelength conversion substrate according to fourth embodiment)]
A wavelength conversion substrate of Example 3 was produced in the same manner as in Example 1 except that the following operations were performed when forming the photosensitive resin layer 35 and the functional layer 37.

  First, the first film 350 obtained in Example 1 was pre-baked at 150 ° C. for 60 seconds using a hot plate. Next, a negative photoresist was applied to one surface 10a of the base material 10 on which the first film 350 was formed by a spin coating method to obtain a second resin layer 710. The obtained second resin layer 710 was pre-baked at 95 ° C. for 6 minutes using a hot plate, and further pre-baked at 65 ° C. for 1 minute.

Next, a part of the second resin layer 710 formed in the opening 41 was exposed from the one surface 10 a side of the base material 10 using the photomask 202. At this time, 365 nm light was irradiated so that the exposure amount was 150 mJ / cm ² . Further, using propylene glycol methyl ether acetate (PGMEA) as a developing solution, the exposed second resin layer 710 was developed for 2 minutes to obtain a shadow forming member 71. Further, the obtained shadow forming member 71 was washed with isopropyl alcohol (IPA) for 10 seconds. Furthermore, the obtained shadow forming member 71 was post-baked at 200 ° C. for 5 minutes using an oven in a nitrogen atmosphere.

Next, aluminum is vapor-deposited with a vacuum degree of 4.2 × 10 ⁻⁴ Pa on one surface 10a of the base material 10 on which the shadow portion forming member 71 is formed, to obtain a second film 373. It was. The thickness of the obtained second film was about 150 nm.

Further, the first film 350 was exposed from the other surface 10b side of the substrate 10. At this time, 294 nm light was irradiated so that the exposure amount was 200 mJ / cm ² . Furthermore, the first film after exposure was developed for 60 seconds using an aqueous solution having a TMAH concentration of 1.5% by mass as a developer to obtain a photosensitive resin layer 35 and a functional layer 37. Further, the obtained photosensitive resin layer 35 and functional layer 37 were washed with water for 60 seconds.

The following materials were used as negative photoresists.
Negative photoresist: SU-8 2010, manufactured by MicroChem

  Similarly to Example 2, the cross section of the obtained partition part 30 was observed by SEM. As a result, also in Example 5, no displacement was confirmed between the layers constituting the partition portion 30.

[Example 6 (Manufacture of wavelength conversion substrate according to fifth embodiment)]
A cresol novolac negative photoresist was applied to the surface of the substrate 10 of Example 1 by a spin coating method to obtain a third film 351. The obtained third film 351 was prebaked by baking at 110 ° C. for 60 seconds using a hot plate.

Next, the third film 351 formed on the surface of the barrier 33 was exposed from the one surface 10 a side of the base material 10 through the photomask 203. At this time, 365 nm light was irradiated so that the exposure amount was 65 mJ / cm ² . The exposed third film 351 was post-baked at 110 ° C. for 60 seconds using a hot plate.

  Further, the exposed third film 351 was developed for 2 minutes using an aqueous solution having a TMAH concentration of 2.38% by mass as a developing solution to obtain a photosensitive resin layer 35. Furthermore, the obtained photosensitive resin layer 35 was washed with water for 60 seconds. In this way, the photosensitive resin layer 35 was obtained on the barrier 33.

Next, along the surfaces of the photosensitive resin layer 35 and the opening 41, aluminum was vapor-deposited at a vacuum degree of 4.2 × 10 ⁻⁴ Pa by a thermal vapor deposition method, whereby a second film 374 was obtained. The thickness of the obtained second film was about 100 nm.

  Next, a novolac positive photoresist was applied to the surface of the second film 374 by a spin coating method to obtain a fourth film 390. The obtained fourth film 390 was pre-baked at 110 ° C. for 3 minutes using a hot plate.

Next, the 4th film | membrane 390 was exposed from the one surface 10a side of the base material 10. FIG. At this time, irradiation with 365 nm light was performed so that the exposure amount was 68.5 mJ / cm ² . Furthermore, the exposed fourth film 390 was developed for 2 minutes using an aqueous solution having a TMAH concentration of 2.38% by mass as a developing solution, whereby the protective layer 39 was obtained. Further, the obtained protective layer 39 was washed with water for 60 seconds. Thus, the protective layer 39 was obtained on the second film 374 formed on the photosensitive resin layer 35. The obtained protective layer 39 was pre-baked at 120 ° C. for 3 minutes using a hot plate.

  Next, the second film 374 formed on the opening 41 was etched for 3 minutes using an etching solution, and then washed twice with water for 60 seconds.

  Next, the protective layer 39 was removed using acetone. In this manner, the wavelength conversion substrate of Example 5 was obtained.

The following materials were used as a cresol novolac negative photoresist, a novolac positive photoresist, and an etchant.
Cresol novolac negative photoresist: AZ nLOF 2000, manufactured by Clariant Novolak positive photoresist: TFR-1000, manufactured by Tokyo Ohka Kogyo Co., Ltd. Etching solution: SLA etchant, manufactured by Hayashi Junyaku Kogyo Co., Ltd.

  Similarly to Example 2, the cross section of the obtained partition part 30 was observed by SEM. As a result, also in Example 6, no displacement was confirmed between the layers constituting the partition portion 30.

[Performance evaluation of organic EL display devices]
An organic EL display device was produced using the wavelength conversion substrate obtained in Examples 1-6. Specifically, it is as follows.

(Preparation of organic EL element substrate)
As a substrate 501, a thin film transistor 502 in which a semiconductor layer 502c is made of IGZO is formed on a glass substrate having a thickness of 0.7 mm by a known semiconductor process, and an interlayer insulating layer 503 made of silicon nitride is formed on the thin film transistor 502. Then, an active matrix TFT substrate having a contact hole 504 formed on the source electrode 502b of the interlayer insulating layer 503 was manufactured.

  Next, a silver film is formed on the interlayer insulating layer 503 by sputtering so as to have a film thickness of 100 nm as the reflective electrode 505B of the organic EL, and a film thickness of 20 nm is formed thereon as the transparent electrode 505A. A film of IZO was formed by sputtering. Then, an 11 μm × 41 μm pattern was formed as the anode (pixel electrode) 505 by photolithography, and the pattern was electrically connected to the source electrode 502 b of the thin film transistor 502 through the contact hole 504.

  Next, this was washed with water and then subjected to ultrasonic cleaning in an alkaline aqueous solution for 30 minutes, washed with water, then subjected to ultrasonic cleaning with ultrapure water for 15 minutes, and dried at 110 ° C. for 30 minutes. This substrate after drying was subjected to UV-ozone treatment in an air atmosphere using a UV ozone cleaner.

Next, the substrate is fixed to a substrate holder in an inline type resistance heating vapor deposition apparatus, and the pressure is reduced to a pressure of 1 × 10 ⁻⁴ Pa or less, and a hole injection layer, a hole transport layer, a blue light emitting layer, a hole block layer, an electron A transport layer and an electron injection layer were formed in this order. In this way, an organic EL layer 506 was obtained.

The hole injection layer, hole transport layer, blue light emitting layer, hole block layer, electron transport layer and electron injection layer were formed with the materials and film thicknesses shown below.
Hole injection layer: 1,1-bisgy 4-tolylamino-phenyl-cyclohexane, film thickness 100 nm
Hole transport layer: N, N′-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine, film thickness 40 nm
Blue light emitting layer: Poly (vinylcarbazole) with bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) and 2,2 ′-(3,1-phenylene) bis [5 -(4-tert-butylphenyl) -1,3,4-oxadiazole], film thickness 30 nm
Hole blocking layer: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, film thickness 10 nm
Electron transport layer: Tris (8-hydroxyquinoline) aluminum, film thickness 30 nm
Electron injection layer: lithium fluoride, 0.5 nm film thickness

  Next, magnesium and silver are co-evaporated on the surface of the organic EL layer 506 through a shadow mask by a vacuum deposition method to form a magnesium silver layer having a thickness of 1 nm, and further, silver having a thickness of 19 nm is formed thereon. A layer was formed to form a cathode (semi-transparent electrode) 507.

(Lamination process)
The wavelength conversion substrate obtained in Examples 1 to 6 and the organic EL element substrate 500, the cathode 507 of the organic EL element substrate, the red wavelength conversion layer 63, the green wavelength conversion layer 65, and the light scattering layer of the wavelength conversion substrate. The organic EL display device was manufactured by attaching them in a nitrogen atmosphere and attaching a driving circuit so as to be opposed to 67.

  It was confirmed that the wavelength conversion substrates of Examples 1 to 6 were excellent in high definition and light extraction efficiency. It was confirmed that the organic EL display device provided with these wavelength conversion substrates is higher in definition and brightness than the conventional organic EL display device.

  From the above results, it was confirmed that the present invention is useful.

  DESCRIPTION OF SYMBOLS 10 ... Base material, 10a ... One side, 10b ... The other side, 20 ... Black matrix layer, 30 ... Partition part, 31 ... Light-shielding part, 33 ... Barrier, 35 ... Photosensitive resin layer, 37 ... Functional layer, 39 DESCRIPTION OF SYMBOLS ... Protective layer, 40 ... Wavelength conversion part, 41 ... Opening part, 50 ... Color filter layer, 60 ... Wavelength conversion layer, 71 ... Shadow part forming member, 330 ... First resin layer, 350 ... First film, 351 ... First 3 films, 370, 371, 372, 373, 374 ... 2nd film, 390 ... 4th film

Claims (8)

A substrate;
A black matrix layer provided on one surface of the base material and having a lattice-shaped light shielding portion and a plurality of openings surrounded by the light shielding portion;
A barrier provided on the light shielding portion;
A photosensitive resin layer provided on the surface of the barrier;
A functional layer provided on the surface of the photosensitive resin layer;
A wavelength conversion layer provided in the opening,
The functional layer is a wavelength conversion substrate that is not in contact with the base material. A substrate;
A black matrix layer provided on one surface of the base material and having a lattice-shaped light shielding portion and a plurality of openings surrounded by the light shielding portion;
A barrier provided on the light shielding portion;
A wavelength conversion substrate provided with a wavelength conversion layer provided in the opening,
Forming the black matrix layer on one side of the substrate;
Forming a first resin layer on the one surface, covering the black matrix layer and using a positive photosensitive resin as a forming material;
A first exposure development step of exposing the first resin layer from the other surface side of the base material and developing the exposed first resin layer to form the barrier. Production method. After the first exposure and development step, forming a first film using a positive photosensitive resin as a forming material along the surface of the base material on which the barrier is formed;
Forming a second film along the surface of the first film;
A second exposure development step of exposing the first film from the other surface side and developing the exposed first film,
In the second exposure and development step, the positive type photosensitive resin layer provided on the surface of the barrier and the positive type are removed by removing the first film and the second film formed in the opening. The manufacturing method of the wavelength conversion board | substrate of Claim 2 which forms the functional layer provided in the surface of the photosensitive resin layer. Between the step of forming the first film and the step of forming the second film,
A third exposure development step of exposing a part of the first film formed in the opening from the one surface side and developing the exposed first film;
4. The method for manufacturing a wavelength conversion substrate according to claim 3, wherein in the third exposure development step, a portion having a different thickness of the first film is formed in the opening. 5. In the step of forming the second film,
Forming a shadow forming member in the opening;
Forming the second film on the one surface on which the shadow forming member is formed, and
The shadow forming member has a portion where an angle formed between a side surface of the shadow forming member and the surface of the first film is an acute angle or a right angle,
The method for manufacturing a wavelength conversion substrate according to claim 3, wherein the shadow portion forming member does not overlap the light shielding portion in a planar manner. In the step of forming the second film,
The method for manufacturing a wavelength conversion substrate according to claim 3, wherein the second film is formed through a mask that covers a part of the first film formed in the opening. After the first exposure and development step, forming a third film using a negative photosensitive resin as a forming material along the surface of the base material on which the barrier is formed;
The negative film provided on the surface of the barrier by exposing the third film formed on the surface of the barrier from the one surface side and developing the third film formed on the opening. A fourth exposure development step of forming a photosensitive resin layer of
Forming a second film on the negative photosensitive resin layer and the opening;
Forming a fourth film using a positive photosensitive resin as a forming material along the surface of the second film;
The surface of the second film provided on the barrier is exposed to the fourth film formed in the opening by exposing the fourth film from the one surface side and developing the exposed fourth film. A fifth exposure development step for forming a protective layer for protecting the film;
Forming the functional layer provided on the surface of the negative photosensitive resin layer by removing the protective layer after etching the second film formed in the opening; and The manufacturing method of the wavelength conversion board | substrate of Claim 2 provided with these.   A display device comprising: the wavelength conversion substrate according to claim 1; and an excitation light source that irradiates the wavelength conversion layer with excitation light.

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