CN114156306A - Display panel manufacturing method, display panel and display device - Google Patents
Display panel manufacturing method, display panel and display device Download PDFInfo
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- CN114156306A CN114156306A CN202111450544.4A CN202111450544A CN114156306A CN 114156306 A CN114156306 A CN 114156306A CN 202111450544 A CN202111450544 A CN 202111450544A CN 114156306 A CN114156306 A CN 114156306A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 135
- 239000002096 quantum dot Substances 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
The application provides a manufacturing method of a display panel, the display panel and a display device, the manufacturing method of the display panel forms a reflecting layer on the whole surface of a switch substrate and a light-emitting element, forms a photoresist layer on the whole surface of the reflecting layer, adopts a yellow light process to carry out patterning treatment on the photoresist layer, then carries out etching treatment on the reflecting layer corresponding to a first photoresist area, so that the reflecting layer at least covers the side surface of the light-emitting element, the light-emitting element is exposed to the first photoresist area, and finally forms a color conversion layer on the side surface of the light-emitting element exposed to the first photoresist area, thereby enabling the light of the light-emitting element to be only emitted from the top surface, and the large-viewing-angle light of the light-emitting element is reflected back through the reflecting layer on the side surface, avoiding the large-viewing-angle light from being emitted from the side surface, and causing adjacent color light to be excited on the color conversion layer, therefore, the problem of optical crosstalk of the color conversion layer is solved, the front brightness is improved, and the luminous energy efficiency is improved.
Description
Technical Field
The present disclosure relates to the field of display device technologies, and in particular, to a method for manufacturing a display panel, and a display device.
Background
Micro light emitting diode (u-LED, including Mini LED and Micro LED) display technologies are increasingly used as next generation display technologies. At present, the method for manufacturing the micro light emitting diode display substrate generally adopts a mode of simultaneously transferring RGB three-color Light Emitting Diodes (LEDs) to realize colorized display.
In the color conversion process of the micro light-emitting diodes, if a barrier layer is not established between the adjacent micro light-emitting diodes or the transmittance of the barrier layer is high and the point position spacing of each micro light-emitting diode is small, the Lambert light type emitted by the micro light-emitting diodes can cause the color conversion units of the adjacent pixels to be excited, so that optical crosstalk occurs, and the displayed color gamut can be greatly reduced.
In addition, if a white barrier layer is used as the barrier layer, although the barrier layer can play a part of a reflection role, the transmittance is high, and the barrier layer cannot play a good role in optical crosstalk; if the black barrier layer is used as the barrier layer, although the optical crosstalk can be well inhibited, the light around the micro light-emitting diode is absorbed, so that the light-emitting brightness is greatly reduced, and the energy efficiency is reduced.
Disclosure of Invention
The application provides a manufacturing method of a display panel, the display panel and a display device, which aim to solve the problem of low light emitting efficiency of a micro light emitting diode.
In one aspect, the present application provides a method for manufacturing a display panel, including:
providing a switch substrate, wherein a plurality of light-emitting elements are arranged on the switch substrate, and the adjacent light-emitting elements are arranged at intervals;
forming a reflective layer on the switch substrate and the light emitting element;
forming a photoresist layer on the reflective layer;
patterning the photoresist layer by adopting a yellow light process, and removing photoresist in a first photoresist area of the photoresist layer, wherein the first photoresist area is an area which covers the light-emitting element and is opposite to one side of the switch substrate, so that part of the reflecting layer is exposed in the first photoresist area;
etching the reflecting layer corresponding to the first photoresist region to enable the reflecting layer to at least cover the side face of the light-emitting element and the light-emitting element to be exposed in the first photoresist region;
and forming a color conversion layer on one surface of the light-emitting element exposed to the first photoresist region.
In one possible implementation manner of the present application, before the step of forming the reflective layer on the switch substrate and the light emitting element, the method further includes:
forming a protective layer on the switch substrate and the light-emitting element, wherein the protective layer covers the switch substrate and the light-emitting element;
forming the reflective layer on the protective layer.
In one possible implementation manner of the present application, the step of forming a protective layer on the switch substrate and the light emitting element includes:
and forming the protective layer by adopting a chemical vapor deposition process, wherein the protective layer comprises at least one layer of polyurethane, epoxy resin and parylene.
In one possible implementation manner of the present application, the step of patterning the photoresist layer by using a yellow light process includes:
processing the photoresist layer by adopting a half-tone mask and an exposure process to form a first photoresist region and a second photoresist region on the photoresist layer, wherein the second photoresist region corresponds to a region except the first photoresist region;
removing the photoresist in the first photoresist area by adopting a developing process;
after the step of performing etching processing on the reflective layer corresponding to the first photoresist region, the method further includes:
and stripping the photoresist in the second photoresist area, wherein the reflecting layer is formed at the side surface of the light-emitting element and at a spacing position on the switch substrate, and the spacing position is the spacing position of the adjacent light-emitting element.
In one possible implementation manner of the present application, the step of forming a reflective layer on the switch substrate and the light emitting element includes:
and forming the reflecting layer by adopting an evaporation process, wherein the reflecting layer is a metal reflecting layer.
In one possible implementation manner of the present application, the metal reflective layer is made of at least one material of silver, aluminum, and titanium.
In one possible implementation manner of the present application, the reflective layer is a silver film layer, and the thickness of the reflective layer is in a range from 80nm to 130 nm.
In one possible implementation manner of the present application, the color conversion layer includes quantum dot units in one-to-one correspondence with the light emitting elements, and the quantum dot units include a plurality of quantum dots with different colors.
On the other hand, the application also provides a display panel which is manufactured by the manufacturing method of the display panel.
On the other hand, the application also provides a display device which comprises the display panel.
The application provides a manufacturing method of display panel, display panel and display device, through form the reflection stratum on switch substrate and light emitting component, and form the photoresist layer on the reflection stratum, adopt the yellow light technology the photoresist layer carries out patterning processing, carries out etching treatment to the reflection stratum that first photoresist district corresponds again, makes the reflection stratum cover at least in the side of light emitting component and light emitting component exposes in first photoresist district, at last in the one side that light emitting component exposes in first photoresist district forms the color conversion layer, makes light emitting component's light only penetrate from the top surface, and light emitting component's large visual angle light reflects back through the reflection stratum of side, plays the effect of blockking of side light, avoids large visual angle light to penetrate from the side, leads to causing adjacent chromatic light to be aroused at the color conversion layer, therefore, the problem of optical crosstalk of the color conversion layer can be greatly improved, the front brightness can be further improved, and the improvement of luminous efficiency is facilitated.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Fig. 2 is a schematic view of a manufacturing process of a method for manufacturing a display panel according to an embodiment of the present disclosure.
Fig. 3 is a schematic manufacturing flow chart of a manufacturing method of a display panel according to yet another embodiment of the present application.
Fig. 4 is a schematic manufacturing flow chart of a manufacturing method of a display panel according to yet another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the features of the terms "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise. It is to be understood that, unless otherwise expressly stated or limited, the terms "connected" and "connecting" are used broadly and can refer to, for example, a direct connection, an indirect connection via an intermediary, a connection between two elements, or an interaction between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Embodiments of the present application provide a method for manufacturing a display panel, a display panel and a display device, which are described in detail below.
Referring to fig. 1, the present embodiment provides a display panel, which includes a switch substrate 10, a light emitting device 20, a protective layer 30, and a reflective layer 40. The light emitting element 20 is a Micro light emitting diode having a light emitting chip, and the light emitting element 20 may be a Mini LED, a Micro LED, or the like.
Referring to fig. 2 to 4, in order to better implement the display panel of the present application, an embodiment of the present application further provides a method for manufacturing a display panel, as shown in fig. 2, the method includes the following steps S100 to S600:
s100, providing a switch substrate 10, wherein a plurality of light-emitting elements 20 are arranged on the switch substrate, and the adjacent light-emitting elements 20 are arranged at intervals.
As shown in fig. 1, two pads 21 are disposed corresponding to each light emitting element 20, and the material of the pads 21 may include one or more of titanium, aluminum, nickel, gold, chromium, platinum, and indium. Each of the light emitting elements 20 is soldered to one of the pads 21, and the solder for soldering may be solder paste.
And S200, forming a reflecting layer 40 on the whole surface of the switch substrate 10 and the light-emitting element 20.
And S300, forming a photoresist layer 50 on the whole surface of the reflecting layer 40. Specifically, the photoresist layer 50 may employ a positive photoresist or a negative photoresist.
S400, patterning is carried out on the photoresist layer 50 by adopting a yellow light process, and the photoresist in the first photoresist region 501 of the photoresist layer 50 is removed.
The first photoresist region 501 is a region covering the light emitting element 20 and facing away from the switch substrate 10, that is, the first photoresist region 501 corresponds to a region where the photoresist layer 50 is not covered by the photoresist after patterning, so that a part of the reflective layer 40 is exposed to the first photoresist region 501.
S500, etching the reflective layer 40 corresponding to the first photoresist region 501, so that the reflective layer 40 at least covers the side surface of the light emitting element 20 and the light emitting element 20 is exposed to the first photoresist region 501.
S600, forming a color conversion layer 60 on a surface of the light emitting element 20 exposed to the first photoresist region 501.
The color conversion layer 60 can be used to convert the light of a single color emitted by the light emitting element 20 into RGB three-color display, and the light emitting element 20 emits light corresponding to the first photoresist region 501.
In the manufacturing method of the display panel according to the embodiment of the application, the reflective layer 40 is formed on the entire surface of the switch substrate 10 and the light emitting element 20, the photoresist layer 50 is formed on the entire surface of the reflective layer 40, the photoresist layer 50 is subjected to patterning processing by adopting a yellow light process, the reflective layer 40 corresponding to the first photoresist region 501 is subjected to etching processing, so that the reflective layer 40 at least covers the side surface of the light emitting element 20, the light emitting element 20 is exposed in the first photoresist region 501, and finally, the color conversion layer 60 is formed on the side surface of the light emitting element 20 exposed in the first photoresist region 501, so that the light of the light emitting element 20 is only emitted from the top surface, and the large viewing angle light of the light emitting element 20 is reflected back through the reflective layer 40 on the side surface, thereby preventing the large viewing angle light from being emitted from the side surface and playing a role of blocking the side surface light, and causing adjacent color light to be excited in the color conversion layer 60, therefore, the problem of optical crosstalk of the color conversion layer 60 can be greatly improved, the front brightness can be further improved, and the improvement of luminous efficiency is facilitated.
Specifically, in some embodiments, the color conversion layer 60 includes quantum dot units in one-to-one correspondence with the light emitting elements 20, and the quantum dot units include a plurality of quantum dots different in color. Wherein, light emitting component 20 can be blue light LED or purple light LED, exemplarily, the light that light emitting component 20 sent is the blue light, the quantum dot includes red quantum dot and green quantum dot, red quantum dot with green quantum dot sets up respectively in one light emitting component 20 top, at this moment, because the light that light emitting component 20 sent is the blue light, the quantum dot only need set up the quantum dot of two kinds of colours of red quantum dot and green quantum dot can, need not set up blue quantum dot also can realize RGB three-colour and show.
Of course, the light emitted by the light emitting elements 20 may also be ultraviolet light, the quantum dots include red quantum dots, green quantum dots, and blue quantum dots, and the red quantum dots, the green quantum dots, and the blue quantum dots are respectively disposed above one of the light emitting elements 20, which is not limited specifically herein.
In some embodiments, as shown in fig. 3, before the step of forming the reflective layer 40 on the entire surfaces of the switch substrate 10 and the light emitting element 20 in step S200, the method further includes:
and S210, forming a protective layer 30 on the whole surface of the switch substrate 10 and the light-emitting element 20, wherein the protective layer 30 covers the switch substrate 10 and the light-emitting element 20.
S220, forming the reflective layer 40 on the protective layer 30.
The protective layer 30 may not only perform a packaging function and prevent moisture from entering, but also perform a blocking function, and by forming a blocking between the reflective layer 40 and the surfaces of the light emitting element 20 and the switch substrate 10, when the reflective layer 40 is a metal layer or has conductive particles, the reflective layer 40 and the light emitting element 20 or the reflective layer 40 and the switch substrate 10 emit light and are short-circuited, thereby performing an insulation protection function.
In some embodiments, the step of forming the protective layer 30 on the entire surfaces of the switch substrate 10 and the light emitting element 20 at S210 includes:
s211, forming the protective layer 30 by adopting a chemical vapor deposition or coating process, wherein the protective layer 30 comprises at least one of polyurethane, epoxy resin and parylene.
Specifically, the protective layer 30 may be a single-layer protective layer 30, or may be a multi-layer protective layer 30, where the multi-layer protective layer 30 may improve the protective effect, and when the protective layer 30 is a multi-layer structure, the materials of each layer may be the same material, or may be different materials, and are not limited herein. For example, the protective layer 30 may be formed by a Chemical Vapor Deposition (CVD) process to form a Parylene coating, where Parylene is an organic polymer coating, and because Parylene has good water resistance and light transmittance, it can prevent water vapor from entering into the encapsulant, so that the LED chip fails and the service life of the LED chip is prolonged.
In some embodiments, the step S200 of forming the reflective layer 40 on the entire surfaces of the switch substrate 10 and the light emitting element 20 includes:
and S230, forming the reflecting layer 40 by adopting at least one process of magnetron sputtering, evaporation, chemical plating, electroplating or electron beam evaporation, wherein the reflecting layer 40 is a metal reflecting layer. The metal reflective layer 40 may be a single layer of metal or a stacked layer of metal, and the reflective layer 40 may be formed by only one process, for example, by evaporation, or may be formed by two or more processes to form the reflective layer 40 having a stacked layer structure, which is not limited herein.
In some embodiments, the metal reflective layer 40 is made of at least one material selected from silver, aluminum, and titanium. The reflective layer 40 is made of a metal material having a high reflectivity, so that a good light reflection effect can be obtained. The metal reflective layer 40 may be a single layer of metal, or may be formed by stacking metals, and when the metal reflective layer 40 is a multi-layer metal stack, the metals of each layer may be the same material, or may be different materials, which is not limited herein.
In some embodiments, the reflective layer 40 is a silver film layer. The thickness of the reflective layer 40 ranges from 80nm to 130 nm. Illustratively, the thickness of the silver film layer may be 80nm, 100nm, or 130 nm.
It is understood that when the thickness range of the reflective layer 40 is too thin, light emitted from the light emitting element 20 may be emitted from the side through the metal reflective layer 40, thereby causing adjacent quantum dots in the color conversion layer 60 to be excited, causing a problem of light crosstalk, i.e., the reflective layer 40 cannot function as a side light block; when the thickness range of the reflective layer 40 is too thick, the time for preparing the metal layer is increased and the material of the metal layer is wasted, which is not favorable for improving the production efficiency and controlling the cost. Therefore, by controlling the thickness of the silver metal film layer within a suitable range, the good reflection effect of the reflection layer 40 is ensured, and meanwhile, the preparation efficiency is improved and the preparation cost is saved.
In some embodiments, referring to fig. 4, the step S400 of performing the patterning process on the photoresist layer 50 by using the photolithography process includes the following steps S410 to S420.
S410, processing the photoresist layer 50 by using a Half-Tone Mask 70(Half Tone Mask) and an exposure process, so that the photoresist layer 50 forms the first photoresist region 501 and a second photoresist region 502, and the second photoresist region 502 corresponds to a region outside the first photoresist region 501. When the first photoresist region 501 is an area not covered by the photoresist after the photoresist layer 50 is patterned, correspondingly, the second photoresist region 502 is an area covered by the photoresist after the photoresist layer 50 is patterned.
And S420, removing the photoresist in the first photoresist region 501 by adopting a developing process.
After the step S500 of performing the etching process on the reflective layer 40 corresponding to the first photoresist region 501, the method further includes:
s510, stripping the photoresist in the second photoresist region 502, wherein the reflective layer 40 is formed on the side surface of the light emitting element 20 at a spacing position on the switch substrate 10, where the spacing position is a spacing position of the adjacent light emitting elements 20.
In order to better implement the display panel of the present application, the present application also provides a display device comprising the display panel. Since the display device has the display panel, all the same advantages are achieved, and the description of the embodiment is omitted. The embodiment of the application is not specifically limited to the application of the display device, and the display device can be any product or part with a display function, such as a television, a notebook computer, a tablet computer, wearable display equipment (such as an intelligent bracelet, an intelligent watch and the like), a mobile phone, virtual reality equipment, augmented reality equipment, vehicle-mounted display, an advertising lamp box and the like.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and the specific implementation of each unit or structure may refer to the foregoing method embodiment, which is not described herein again.
The above detailed description is made on the manufacturing method of the display panel, the display panel and the display device provided in the embodiment of the present application, and a specific example is applied in the description to explain the principle and the implementation manner of the embodiment of the present application, and the description of the embodiment is only used to help understanding the technical scheme and the core idea of the embodiment of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a switch substrate, wherein a plurality of light-emitting elements are arranged on the switch substrate, and the adjacent light-emitting elements are arranged at intervals;
forming a reflective layer on the switch substrate and the light emitting element;
forming a photoresist layer on the reflective layer;
patterning the photoresist layer by adopting a yellow light process, and removing photoresist in a first photoresist area of the photoresist layer, wherein the first photoresist area is an area which covers the light-emitting element and is opposite to one side of the switch substrate, so that part of the reflecting layer is exposed in the first photoresist area;
etching the reflecting layer corresponding to the first photoresist region to enable the reflecting layer to at least cover the side face of the light-emitting element and the light-emitting element to be exposed in the first photoresist region;
and forming a color conversion layer on one surface of the light-emitting element exposed to the first photoresist region.
2. The method for manufacturing a display panel according to claim 1, wherein before the step of forming a reflective layer on the switch substrate and the light-emitting element, the method further comprises:
forming a protective layer on the switch substrate and the light emitting element;
forming the reflective layer on the protective layer.
3. The method according to claim 2, wherein the step of forming a protective layer over the switch substrate and the light-emitting element includes:
and forming the protective layer by adopting a chemical vapor deposition or coating process, wherein the protective layer comprises at least one layer of polyurethane, epoxy resin and parylene.
4. The method according to claim 1, wherein the step of patterning the photoresist layer by a yellow light process comprises:
processing the photoresist layer by adopting a half-tone mask and an exposure process to form a first photoresist region and a second photoresist region on the photoresist layer, wherein the second photoresist region corresponds to a region except the first photoresist region;
removing the photoresist in the first photoresist area by adopting a developing process;
after the step of performing etching processing on the reflective layer corresponding to the first photoresist region, the method further includes:
and stripping the photoresist in the second photoresist area, wherein the reflecting layer is formed at the side surface of the light-emitting element and at a spacing position on the switch substrate, and the spacing position is the spacing position of the adjacent light-emitting element.
5. The method according to claim 1, wherein the step of forming a reflective layer over the switch substrate and the light-emitting element includes:
and forming the reflecting layer by adopting an evaporation process, wherein the reflecting layer is a metal reflecting layer.
6. The method for manufacturing a display panel according to claim 5, wherein the metal reflective layer is made of at least one material selected from silver, aluminum, and titanium.
7. The method of claim 5, wherein the reflective layer is a silver film layer, and the thickness of the reflective layer is in a range of 80nm to 130 nm.
8. The method for manufacturing a display panel according to any one of claims 1 to 7, wherein the color conversion layer includes quantum dot units in one-to-one correspondence with the light emitting elements, and the quantum dot units include a plurality of quantum dots of different colors.
9. A display panel manufactured by the method for manufacturing a display panel according to any one of claims 1 to 8.
10. A display device characterized by comprising the display panel according to claim 9.
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