CN107579141A - Micro light-emitting element and manufacturing method thereof, display device and transition carrier plate device - Google Patents
Micro light-emitting element and manufacturing method thereof, display device and transition carrier plate device Download PDFInfo
- Publication number
- CN107579141A CN107579141A CN201710893929.5A CN201710893929A CN107579141A CN 107579141 A CN107579141 A CN 107579141A CN 201710893929 A CN201710893929 A CN 201710893929A CN 107579141 A CN107579141 A CN 107579141A
- Authority
- CN
- China
- Prior art keywords
- layer
- valley
- emitting component
- patterning
- miniature light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000007704 transition Effects 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 238000000059 patterning Methods 0.000 claims description 102
- 229920002120 photoresistant polymer Polymers 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 285
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 27
- 238000000576 coating method Methods 0.000 description 27
- 238000012546 transfer Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The micro light-emitting element comprises a patterned adhesion layer, a light-emitting diode and a reflecting layer. The patterned adhesive layer has a bottom surface and a top surface opposite to each other. The light emitting diode is arranged on the top surface of the patterned adhesion layer, wherein the light emitting diode at least comprises a first semiconductor layer, a second semiconductor layer partially overlapped with the first semiconductor layer, a first electrode connected with the first semiconductor layer and a second electrode connected with the second semiconductor layer. The reflection layer is arranged on the bottom surface of the patterned adhesion layer and is provided with a plurality of first peak parts and a plurality of first valley parts so as to form a surface with undulation.
Description
Technical field
The display device applied the present invention relates to miniature light-emitting component and its manufacture method and miniature light-emitting component put with
Transition support plate device.
Background technology
Micro-led array (Micro Light-Emitting Diode Array) is (to be less than size is small
100 microns) it is micro-led with array way spread configuration on the array base palte with image element circuit.Pass through addressing
Change actuation techniques, it is each micro-led to be controlled with addressing, be operated alone and light, thus a point pixel can be used as, in
It is that micro-led array will can play the function of display.
Except having the characteristics that high efficiency, high brightness, high-reliability and reaction time are fast, micro-led array is more
Has the advantage such as simple energy-conservation, mechanism, small volume, slim.Compared with being equally self luminous Organic Light Emitting Diode (Organic
Light-Emitting Diode) display, micro-led array has preferable stability of material, long lifespan and nothing
The problems such as image branding.
In order to further improve every characteristic of micro-led array, association area is there's no one who doesn't or isn't painstakingly developed.
How a kind of micro-led array technique associated therewith with preferable characteristic, the real current important research and development class of category are provided
One of topic, also needs improved target badly as currently associated field.
The content of the invention
In multiple embodiments of the present invention, by the setting of supporting part, miniature light-emitting component and carrier substrate are reduced
Adhesion, in order to the transfer of miniature light-emitting component.In addition, the shape in the reflecting layer of miniature light-emitting component can be also designed, with profit
In the light-emitting line distribution or light extraction efficiency that improve miniature light-emitting component.
According to the present invention some embodiments, miniature light-emitting component include patterning adhesion layer, light emitting diode and
Reflecting layer.Patterning adhesion layer has relative bottom surface and top surface.Light emitting diode is arranged at the top surface of patterning adhesion layer, its
Middle light emitting diode comprises at least the first semiconductor layer, second semiconductor layer overlapping with the first semiconductor layer part, the first electricity
Pole connects first semiconductor layer and second electrode connects the second semiconductor layer.Reflecting layer is arranged at the bottom of patterning adhesion layer
Face, reflecting layer is with the surface of multiple first valleys and multiple first valley to be risen and fallen with height.
In some embodiments of the present invention, miniature light-emitting component further includes a supporting part, and self-reflection layer is towards away from hair
The direction of optical diode protrudes, and wherein the material of supporting part includes reflecting layer with patterning the material of adhesion layer at least one of which
Material.
In some embodiments of the present invention, supporting part includes reflection extension and sticks together extension, sticks together extension
Portion protrudes from adhesion layer is patterned towards the direction away from light emitting diode, wherein sticking together extension is arranged at reflection extension and figure
Between case adhesion layer.
In some embodiments of the present invention, patterning adhesion layer is with more multiple valleys with multiple valley with height
The surface of fluctuating, and the respectively valley for patterning adhesion layer corresponds to respectively first valley, and pattern respectively paddy of adhesion layer
Portion corresponds to respectively first valley.
In some embodiments of the present invention, miniature light-emitting component further includes a passivation layer, is arranged at light emitting diode
Side, and extend over patterning adhesion layer side.
In some embodiments of the present invention, passivation layer further extends to reflecting layer.
In some embodiments of the present invention, supporting part has the first width in first direction, and light emitting diode is in the
One direction has the second width, and the first width of supporting part is less than the second width of light emitting diode.
In some embodiments of the present invention, reflecting layer includes a central area and a peripheral region, during peripheral region is arranged at
Entreat on the outside of area, and two neighbor distances of the valley in centrally located area are the first distance, positioned at the valley of peripheral region two it is adjacent away from
From for second distance, wherein the first distance and second distance are unequal.
In some embodiments of the present invention, reflecting layer includes metal, alloy, metallic salt, alloy salt or foregoing
Combination.
According to some embodiments of the present invention, display device includes array base palte, adhesion layer and foregoing miniature hair
Optical element.Adhesion layer is arranged on array base palte.Miniature light-emitting component is arranged on array base palte, and miniature light-emitting component via
Adhesion layer is attached on array base palte.
In some embodiments of the present invention, miniature light-emitting component further includes supporting part, extends toward array base palte, wherein
Supporting part includes reflecting layer and patterning adhesion layer at least one of which.
According to some embodiments of the present invention, transition support plate device includes carrier substrate, foregoing miniature light-emitting component
And patterning photoresist layer.Miniature light-emitting component is arranged on carrier substrate, and wherein the miniature light-emitting component includes a supporting part,
Wherein the material of supporting part includes reflecting layer with patterning the material of adhesion layer at least one of which.Patterning photoresist layer is arranged at
Between carrier substrate and miniature light-emitting component, wherein patterning photoresist layer has multiple second valleys and multiple second valley, its
In the first valley and the first valley be correspondingly arranged in the second valley and in the second valley, and the supporting part of miniature light-emitting component is toward carrying
The inner surface extension of structure base board.
In some embodiments of the present invention, supporting part directly contacts with carrier substrate.
According to the present invention some embodiments, manufacture miniature light-emitting component method include form photoresist layer in carrier base
On plate；By the patterned surface of photoresist layer, patterning photoresist layer is formed；Formed a reflecting layer in patterning photoresist layer on, wherein
The surface that surface of the reflecting layer along patterning photoresist layer sets and risen and fallen with a height；Adhesion layer is formed on reflecting layer, its
The bottom of middle adhesion layer is the surface that a height rises and falls；Light emitting diode is set, on adhesion layer；Pattern layers, shape will be sticked together
Into a patterning adhesion layer；And it will be patterned into photoresist layer removal.
In some embodiments of the present invention, reflecting layer is with multiple first valleys and multiple first valley with height
The surface of low fluctuating, patterning photoresist layer have multiple second valleys and multiple second valley, and the first valley and the first valley
The second valley is correspondingly arranged in being to use a nanoimprint step shape by the patterned surface of the photoresist layer in the second valley
Into.
In some embodiments of the present invention, the method for manufacturing miniature light-emitting component is further included by the surface of photoresist layer
Before patterning, form one and be opened in photoresist layer；And a reflection extension is formed in the opening, the wherein reflection extends
Portion is identical with the material in the reflecting layer.
In some embodiments of the present invention, the method for manufacturing miniature light-emitting component is further included by the surface of photoresist layer
Before patterning, formation is opened in photoresist layer；And form one and stick together extension in the opening, wherein adhesion layer is glutinous with this
The material for extension is identical.
In some embodiments of the present invention, the method for manufacturing miniature light-emitting component further includes the patterning passivation of covering one
Layer extends over the side and the side of patterning adhesion layer of the light emitting diode on the light emitting diode.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Brief description of the drawings
Fig. 1 is the flow chart according to the method for the miniature light-emitting component of manufacture of some embodiments of the present invention.
Fig. 2 to Figure 13 is the method according to the miniature light-emitting component of manufacture of some embodiments of the present invention in multiple stages
Diagrammatic cross-section.
Figure 14 is the diagrammatic cross-section according to the miniature light-emitting component of some embodiments of the present invention.
Figure 15 is the diagrammatic cross-section according to the miniature light-emitting component of some embodiments of the present invention.
Figure 16 is the diagrammatic cross-section according to the miniature light-emitting component of some embodiments of the present invention.
Figure 17 is the diagrammatic cross-section according to the miniature light-emitting component of some embodiments of the present invention.
Figure 18 be according to the present invention multiple embodiments miniature light-emitting component reflecting layer multiple valleys with it is multiple
The schematic diagram of valley.
Wherein, reference
100：Method 524：Stick together extension
102~124：Step 530：Light emitting diode
300：Photoresist layer 530S：Side
300’：Pattern photoresist layer 531：Second semiconductor layer
300P’：Valley 532：Active layers
300V’：Valley 533：First semiconductor layer
302：Surface 534：First electrode
310：Opening 535：Second electrode
400：Carrier substrate 540：Passivation layer
500：Miniature light-emitting component 600：Transfer head
510：Reflectance coating 700：Receive substrate
512：Reflecting layer 800：Adhesion layer
512A：Surface 900：Display device
512P：Valley FC：Supporting part
512V：Valley D1：First direction
514：Reflect extension DA1：First distance
514A：Surface DA2：Second distance
520：Stick together covering W1：Width
522：Adhesion layer W2：Width
522P：Valley TD：Transition support plate device
522’：Pattern adhesion layer CA：Central area
522A：Bottom surface PA：Peripheral region
522B：Top surface L1：Projected length
522S：Side G：Gap
θA:Base angle
Embodiment
Multiple embodiments of the present invention, as clearly stated, the details in many practices will be disclosed with schema below
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying accompanying drawing, one
A little known usual structures and element in figure by a manner of simply illustrating for it.
In the accompanying drawings, for the sake of clarity, it is exaggerated the thickness of each element etc..Throughout the specification, identical accompanying drawing
Mark represents identical element.It should be appreciated that ought such as layer, film, region or substrate element be referred to as " on another element ",
Or when " being connected to another element ", " being overlapped in another element ", it can be connected directly on another element or with another element,
Or intermediary element can be there is also.On the contrary, when element is referred to as " directly on another element " or " being directly connected to " is another
During element, in the absence of intermediary element.As it is used herein, " connection " can refer to physics and/or electrical connection.
It will be appreciated that though term " first " and " second " etc. can be used for describing various elements, part, area herein
Domain, layer and/or part, but these elements, part, region and/or part should not be limited by these terms.These terms
It is only used for distinguishing an element, part, region, layer or part and another element, part, region, layer or part.Cause
This, " the first element " discussed below, " part ", " region ", " floor " or " part " can be referred to as the second element, part, area
Domain, layer or part are without departing from teaching herein.
Term used herein is used for the purpose of the purpose of description specific embodiment, rather than restricted.Such as this paper institutes
Use, except non-content explicitly indicates that, otherwise singulative " one ", "one" and "the" are intended to include plural form, including
" at least one "."or" expression " and/or ".As it is used herein, term " and/or " listd including one or more correlations
Any and all combination of purpose.It is also understood that ought be in this manual in use, term " comprising " and/or " comprising " be specified
The feature, region, entirety, step, operation, the presence of element and/or part, but be not excluded for one or more of the other feature,
Region entirety, step, operation, element, part and/or its presence or addition for combining.
In addition, such as " under " or " bottom " and " on " or the relative terms at " top " can be used to describe a member herein
The relation of part and another element, as shown in the figure.It should be appreciated that relative terms are intended to include in addition to the orientation shown in figure
The different azimuth of device.If for example, the device upset in an accompanying drawing, be described as be in other elements " under " member of side
Part by be oriented at other elements " on " side.Therefore, exemplary term " under " orientation of " under " and " on " can be included, depend on
In the specific orientation of accompanying drawing.Similarly, if in an accompanying drawing device upset, be described as be in other elements " lower section " or
The element of " lower section " will be oriented in other elements " top ".Therefore, exemplary term " following " or " following " can include
Above and below orientation.
" about " used herein or " substantial " particular value determined including described value and in those of ordinary skill in the art
Acceptable deviation range in average value, it is contemplated that the measurement discussed and the specific quantity of the error related to measurement
(that is, the limitation of measuring system).For example, " about " can be represented in one or more standard deviations of described value, or ± 30%,
± 20%, in ± 10%, ± 5%.Furthermore " about " used herein or " substantial " can according to optical property, etching property or its
Its property, to select more acceptable deviation range or standard deviation, and whole properties can be applicable without a standard deviation.
Unless otherwise defined, all terms (including technology and scientific terminology) used herein have with the present invention belonging to neck
The identical implication that the those of ordinary skill in domain is generally understood that.It will be further appreciated that such as in usually used dictionary
Those terms of definition should be interpreted as having consistent with their implications in correlation technique and context of the invention
Implication, and Utopian or excessively formal meaning will be not construed as, unless clearly so definition herein.
Exemplary embodiment is described herein with reference to the sectional view of the schematic diagram as idealized embodiments.Therefore, can be with
Anticipate the change in shape of the diagram of the result as such as manufacturing technology and/or tolerance.Therefore, embodiment as described herein is not
The given shape in region as illustrated herein should be construed as limited to, but including the form variations for example as caused by manufacture.Example
Such as, coarse and/or nonlinear characteristic can generally be had by being illustrated and described as flat region.In addition, shown acute angle can be with
It is round.Therefore, the region shown in figure is substantially schematical, and their shape is not intended to the essence for showing region
True shape, and not it is intended to limit the scope of claim.
Fig. 1 is the flow chart according to the method 100 of the miniature light-emitting component of manufacture of some embodiments of the present invention.Method
100 include step 102~124.Fig. 2 to Figure 13 is the side according to the miniature light-emitting component of manufacture of some embodiments of the present invention
Method 100 is in the diagrammatic cross-section in multiple stages.Fig. 2 to Figure 13 is refer to below to understand the method for manufacturing miniature light-emitting component
100。
Fig. 1 step 102 and Fig. 2 is come first.Photoresist layer 300 is formed on carrier substrate 400.Photoresist layer 300
Material may include eurymeric photoresist (Positive Photoresist) or minus photoresist (Negative
Photoresist), it can be formed by the mode such as depositing or being coated with.For example, the main component of photoresist layer 300 includes phenol
Formaldehyde, phenolic resin or pi.It will be understood that the material of photoresist layer 300 provided above is only to illustrate, and it is not used to limit
The system present invention, persond having ordinary knowledge in the technical field of the present invention should be depending on being actually needed, and elasticity selects photoresist layer 300
Material.The thickness of photoresist layer 300 is about 2 microns to 20 microns.It will be understood that the thickness of photoresist layer 300 provided above is only
Illustrate, and be not used to the limitation present invention, persond having ordinary knowledge in the technical field of the present invention should be depending on being actually needed, elasticity
Select the thickness of photoresist layer 300.
Then, Fig. 1 step 104 and Fig. 3 is come.Photoresist layer 300 is patterned, forms opening 310 in photoresist layer 300
In, its split shed 310 exposes the portion inner surface of carrier substrate 400, such as：Photoresist layer 300 covers the interior table of carrier substrate 400
A face part, and photoresist layer 300 does not cover inner surface another part of carrier substrate 400；Either photoresist layer 300 and carrier base
The inner surface portion contact of plate 400, and inner surface another part of carrier substrate 400 does not contact with photoresist layer 300.In this implementation
It is that the mode for using exposure imaging optionally removes the photoresist layer 300 of part to form opening 310 be example in mode, but
Not limited to this.In other embodiments, laser removal, nanometer can be used to turn (pressure) for the photoresist layer 300 for optionally removing part
India side formula etc. other suitable modes form opening 310.In some embodiments, opening 310 is non-to be arranged at photoresist layer
300 both sides, opening 310 are located in photoresist layer 300.For example, photoresist layer 300 can be considered two parts 3001,3002, and be open
310 between two parts 3001,3002 of photoresist layer 300.
Come Fig. 1 step 104 and Fig. 4.Photoresist layer 300 forms patterning photoresist layer via the step of patterning
300’.The step of photoresist layer 300 patterns can be by modes such as nano impression (turning) or exposure imagings, to form patterning light
Resistance layer 300 '.For example sequentially comprise the steps of, so only demonstration example, the visual actual demand of those skilled in the art adjust.It is first
First, soft roasting photoresist layer 300, wherein soft roasting temperature is about Celsius 60 degree to 120 degree.Then, photoresist layer 300 is exposed.Then, show
Shadow photoresist layer 300, and the therefore optionally carrier substrate 400 of exposed part.Develop after photoresist layer 300, photoresist layer 300 is not yet
By hard baking, and still unshaped state is in, photoresist layer 300 can deform via natural compression.In this, valley 300P '
With triangular cross-section, it can be corner vertebra or circular cone.It will be understood that the present invention should not be limited with valley 300P ' shape
Scope.In other embodiment, valley 300P ' can be elliptic conic shape or other suitable shapes.Or in other embodiment party
In formula, the surface 302 for patterning photoresist layer 300 ' only can have height change (to describe in detail, refer to figure in one-dimensional square
18), valley 300P ' and valley 300V ' can extend towards a direction, and have a height distributional difference in other direction, and valley 300P '
For the column etc. with triangle, semiellipse section.In other embodiment, the valley 300P ' of photoresist layer 300 ' is patterned
It can be distributed with valley 300V ' with concentric circles, its split shed 310 can be located at the center of circle of this concentric circles.
It will be understood that the valley 300P ' and valley 300V ' of patterning photoresist layer 300 ' position distribution, depth, shape can
To be adjusted depending on actual conditions, the scope of the present invention should not be limited with this.
By taking nano impression as an example, photoresist layer 300 is in the state that can be deformed via natural compression, therefore can be by receiving
Rice imprint step, makes patterning photoresist layer 300 ' have valley 300P ' and multiple valley 300V ', so that surface 302 is presented in height
The surface of low fluctuating.By taking exposure imaging as an example, exposure depth that can be appropriate, so that the photoresist layer 300 of top half is exposed
And pattern, so that the surface to be risen and fallen in height is presented in surface 302., can be with hard baking pattern after nano impression or exposure imaging
Change photoresist layer 300 ', harden patterning photoresist layer 300 ', the temperature of wherein hard baking is about Celsius 120 degree to 220 degree.Hard baking
Afterwards, ideally, photoresist layer 300 does not deform because of natural compression.In section Example, exposure imaging mode is open to be formed
310 with patterning photoresist layer 300 ' have valley 300P ' and multiple valley 300V ' can together with formed, do not calculate soft roasting and/or firmly
Roasting step.In another part embodiment, nano impression (turns) mode to be had to form opening 310 and patterning photoresist layer 300 '
Valley 300P ' and multiple valley 300V ' can together with formed, do not calculate soft roasting and/or hard baking step.
Then, Fig. 1 step 108 and Fig. 5 is come.Reflectance coating 510 is formed in patterning on photoresist layer 300 ', wherein instead
Film 510 is penetrated to be conformally arranged on patterning photoresist layer 300 '.
In this, reflectance coating 510 has reflecting layer 512 and reflection extension 514.Reflecting layer 512 along patterning photoresist layer
300 ' surface 302 is set, and the surface 512A to be risen and fallen with height.Specifically, the surface 512A in reflecting layer 512 has more
Individual valley 512P and multiple valley 512V, and the surface 512A in reflecting layer 512 is risen and fallen in height, and the valley in reflecting layer 512
512P and valley 512V is correspondingly arranged on the valley 300P ' and valley 300V ' of patterning photoresist layer 300 ' respectively.
In some embodiments of the present invention, the reflection extension 514 of reflectance coating 510 is arranged at patterning photoresist layer
In 300 ' opening 310.In some embodiments, the reflection extension 514 of reflectance coating 510 has surface 514A, to even
Connect or the direct inner surface of contact carrier substrate 400, such as：Photoresist layer 300 does not cover the inner surface of carrier substrate 400 either
The inner surface of the discontiguous carrier substrate 400 of photoresist layer 300.
In some embodiments of the present invention, the material of reflectance coating 510 can select the material that reflectivity is more than 80%,
And can be single or multiple lift structure.In some embodiments, metal, alloy, metallic salt, alloy salt or it is foregoing two kinds with
On combination.For example, the material of reflectance coating 510 can be gold, silver, copper, aluminium or its combination.Reflectance coating 510 can be by heavy
Product etc. mode and formed.The thickness of reflectance coating 510, such as：About 0.05 micron (um) to 3 microns (um), but not limited to this.
In other embodiment, reflectance coating 510 can also select small using transparent but refractive index opposed patterns adhesion layer 522 '
Material (will illustrate) in subsequent paragraph, to reach the effect of total reflection.For example, the refractive index of reflectance coating 510 be about 1.2 to
About 1.6.
Come Fig. 1 step 110 and Fig. 6.Formation sticks together covering 520 on reflectance coating 510.In this, covering is sticked together
Thing 520 can through (heating (such as：It is soft roasting) and there is appropriate stickiness.For example, it can be individual layer or more to stick together covering 520
Rotating fields, and it can use the organic material of tool stickiness, such as photoresistance, benzocyclobutene (Benzocyclobutene；BCB)、
Deng other suitable materials.In section Example, the refractive index of covering 520 is sticked together, such as：In about 1.2 to 2 scope
It is interior.
In present embodiment, covering 520 is sticked together with adhesion layer 522 and sticks together extension 524.Adhesion layer 522
With relative bottom surface 522A and top surface 522B.The bottom surface 522A of adhesion layer 522, such as：It is undulated in height.Adhesion layer 522
Bottom surface 522A there are multiple valley 522P, correspond to the valley 512V in reflecting layer 512 respectively.The top surface 522B of adhesion layer 522, example
Such as：Can be flat condition or substantially planar shape.Extension 524 is sticked together to insert in the opening 310 of patterning photoresist layer 300 '.Citing
For, the reflection extension 514 of reflectance coating 510 is arranged in the opening 310 of patterning photoresist layer 300 ', then sticks together extension
The side of 524 openings 310 inserted is formed by reflection extension 514, therefore, is alternatively referred to as sticked together extension 524 and is inserted
The reflection extension 514 of reflectance coating 510 is arranged in the opening 310 of patterning photoresist layer 300 '.Reflected in present embodiment
Extension 514 and stick together extension 524 and insert opening and 310 be collectively referred to as supporting part FC.
Come Fig. 1 step 112 and Fig. 7.By light emitting diode 530 from growth substrate (not shown), transposition is in sticking together
On the top surface 522B of layer 522.In this, light emitting diode 530 is arranged to supporting part FC surface.Light emitting diode 530 with
Supporting part FC is in upright projection in overlapping on the direction of carrier substrate 400.
Wherein, light emitting diode 530 is micro-led (micro light emitting diode).Yu Benfa
In bright multiple embodiments, micro-led size preferably between about 10 square microns to about 10000 square microns it
Between, the micro-led length of side is limited to about 100 microns (μm) below.It is micro-led to be used as in practice
The pixel of display panel.Persond having ordinary knowledge in the technical field of the present invention, can be according to the Pixel Dimensions of display panel
Demand adjusts micro-led size.
In some embodiments, light emitting diode 530 comprises at least the first semiconductor layer 533 and the second semiconductor layer
531st, first electrode 534 and second electrode 535.In this, the second semiconductor layer 531 partly overlaps with the first semiconductor layer 533,
First electrode 534 connects the second semiconductor layer 531, and second electrode 535 connects the first semiconductor layer 533.In another embodiment, hair
Optical diode 530 further includes active layers 532, and wherein active layers 532 are arranged at the second semiconductor layer 531 and the first semiconductor layer
Between 533.In an embodiment, the first semiconductor layer 533 is for example：Can be P-type semiconductor, the second semiconductor layer 531 is for example：Can
For N-type semiconductor, and active layers 532 are for example：Can be multiple quantum well (multiple quantum well；MQW it is) and/or single
(single quantum well；SQW).Wherein, the first semiconductor layer 533 and the second semiconductor layer 531 are opposite polarity half
Conductor layer.
It should be appreciated, however, that semiconductor layer type provided above is only to illustrate, and the limitation present invention is not used to, this hair
Bright those of ordinary skill in the art, can be according to being actually needed, elasticity the first semiconductor layer 533 of selection and the second half
The type of conductor layer 531.In addition, persond having ordinary knowledge in the technical field of the present invention, can additionally set P+ or N+
The semiconductor layer of type, with increase the electrode the 1st of light emitting diode 530, second electrode 535 Ohmic contact.Wherein, additionally
The doping concentration of the semiconductor layer of P+ or N+ types is set to be more than mixing for the first semiconductor layer 533 and the second semiconductor layer 531
Miscellaneous concentration.
In present embodiment, so that horizontal type is micro-led as an example, wherein negative electrode and anode (such as：First electricity
Pole 534 and second electrode 535) positioned at light emitting diode 530 towards on the opposite side of carrier substrate 400, the present invention not with
This is limited.In other embodiment, light emitting diode 530 can be but be not limited to that vertical-type is micro-led or horizontal type
Micro-led, wherein the micro-led negative electrode of vertical-type and anode are positioned at micro-led up and down two
Side, such as：First electrode 534 and second electrode 535 therein one between light emitting diode 530 and carrier substrate 400,
First electrode 534 and second electrode 535 it is wherein another positioned at light emitting diode 530 towards on the opposite side of carrier substrate 400.
Come Fig. 1 step 114 and Fig. 8.Adhesion layer 522 is patterned, forms patterning adhesion layer 522 ', and retain
Stick together extension 524.For example, patterning adhesion layer 522 ', which can cover to stick together extension 524 and be adjacent to, sticks together extension
Part reflectance coating 510 and partially patterned photoresist layer 300 ' near 524.Consequently, it is possible to each light emitting diode 530 can be distinguished
Correspond to a patterning adhesion layer 522 ' and one sticks together extension 524.In other embodiment, each light emitting diode
530 can be respectively corresponding to a few patterning adhesion layer 522 ' and at least one stick together extension 524.In this, can use
Gold-tinted lithographic collocation dry etching technology, such as inductively coupled plasma Induced coupled plasma (ICP), to carry out
The step of this patterning sticks together covering 520.After the patterning step of adhesion layer 522, hard baking can be carried out, and makes to stick together covering
Thing 520 is shaped.
It will be understood that in some embodiments, step 114 can be carried out before step 112, in other words, set
Before light emitting diode 530, you can adhesion layer 522 is carried out into patterning step, then light emitting diode 530 is arranged at into patterning and sticked
On layer 522 '.Thus, it is not necessary to carry out the patterning step of adhesion layer 522 again after the setting of light emitting diode 530.Its
In, patterning step can be development step, laser removal step, transfer step or other suitable steps.
Come Fig. 1 step 116 and Fig. 9.Passivation layer 540 is covered on light emitting diode 530, and is extended over luminous
The side 530S of diode 530 and patterning adhesion layer 522 ' side 522S.In some embodiments, passivation layer 540 connects
Touch and connect reflectance coating 510.In some embodiments, passivation layer 540 can be single layer structure or multilayer knot material structure, and its material
Material, it is preferred that can be inorganic material, such as：Silica, silicon nitride, silicon oxynitride or other appropriate materials.It is real in part
To apply in mode, the material of passivation layer 540 of single layer structure or multilayer knot material structure is alternatively organic material, such as：Photoresistance, acrylic acid
Class, polyimides, polymethyl methacrylate (Poly (methyl methacrylate)；) or other suitable materials PMMA
Material, or organic material and inorganic material stacked structure.
Come Fig. 1 step 118 and Figure 10.Patterned passivation layer 540, to remove at least part of passivation layer 540, example
Such as：Perforate (not indicating) is formed, so that the first electrode 534 and second electrode 535 of light emitting diode 530 are exposed.In other words,
The part of first electrode 534 and a part of not passivated layer 540 of second electrode 535 are covered or contacted.
In this, the collocation dry ecthing of gold-tinted lithographic, such as inductively coupled plasma Induced coupled can be used
Plasma (ICP) carries out this patterning step.In etch passivation layer 540, etchant, such as：Can be carbon tetrafluoride (CF4,
Sulfur hexafluoride (SF6) or fluoroform (CHF3), but not limited to this.
Thereafter, the reflectance coating 510 of part can be removed.For example, light emitting diode can be protected by passivation layer 540
530 and partially reflecting layer 512, and protect the reflecting layer 512 of part to be etched to being not affected by passivation layer 540.In other words, it is blunt
Change the light emitting diode 530 below layer 540 with partially reflecting layer 512 (or reflecting layer 512 not to be exposed) compared to blunt
It is smaller that another part reflecting layer 512 (or reflecting layer 512 to be exposed) outside change layer 540 is etched probability.It is anti-in etching
When penetrating film 510, the collocation dry ecthing of gold-tinted lithographic, such as inductively coupled plasma Induced coupled can be used
Plasma (ICP), etchant, such as：Can be chlorine (Cl2) or boron chloride (BCl3), but not limited to this.In this, light is patterned
Resistance layer 300 ' and passivation layer 540 can resist this etchant.Specifically when reflectance coating 510 is metal material, this etching
Agent is more than etch-rate of this etchant for patterning photoresist layer 300 ' for the etch-rate of reflectance coating 510.Consequently, it is possible to
During reflectance coating 510 is etched, patterning photoresist layer 300 ' can also protect reflection extension 514.
So far, present embodiment can provide a kind of transition support plate device TD.This transition support plate device TD includes carrier base
Plate 400, miniature light-emitting component 500 and patterning photoresist layer 300 '.Miniature light-emitting component 500 includes patterning adhesion layer
522 ', light emitting diode 530, reflecting layer 512, supporting part FC and passivation layer 540.Miniature light-emitting component 500 is arranged at carrier
On substrate 400, patterning photoresist layer 300 ' is arranged between carrier substrate 400 and miniature light-emitting component 500, wherein patterning light
Resistance layer 300 ' has multiple valley 300P ' and multiple valley 300V ', wherein the peak in the reflecting layer 512 in miniature light-emitting component 500
Portion 512P and valley 512V is correspondingly arranged on the valley 300P ' and valley 300V ' of patterning photoresist layer 300 ' respectively.
In some embodiments of the present invention, the interior table of the supporting part FC of miniature light-emitting component 500 toward carrier substrate 400
Face extends.Patterning photoresist layer 300 ' has opening 310, and the supporting part FC of miniature light-emitting component 500 is connected by opening 310
Carrier substrate 400.In some embodiments, supporting part FC directly contacts with carrier substrate 400.In other parts embodiment
In, miniature light-emitting component 50 can include multiple supporting part FC.
Come Fig. 1 step 120 and Figure 11.It will be patterned into photoresist layer 300 ' (with reference to figure 10) removal., can be by this
By dry ecthing, such as reactive ion etch (reactive ion etch；RIE) or other suitable etching modes carry out this
Patternized technique.For example, can be by the gas reaction that can remove organic remains, such as Oxygen plasma ashing technique
(oxygen plasma ashing), to remove patterning photoresist layer 300 ', and make light emitting diode 530 only by supporting part FC
It is fixed on carrier substrate 400.In other words, in addition to supporting part FC, have between carrier substrate 400 and reflecting layer 512
Clearance G.During patterning photoresist layer 300 ' is removed, passivation layer 540 and reflectance coating 510 can protect miniature luminous member
Other layer of body of part 500, from the injury to this removal process.
Consequently, it is possible to miniature light-emitting component 500 is formed on carrier substrate 400.Miniature light-emitting component 500 includes pattern
Change adhesion layer 522 ', light emitting diode 530, reflecting layer 512, supporting part FC and passivation layer 540, wherein miniature light-emitting component
500 are only connected to carrier substrate 400 with its supporting part FC, are advantageous to draw the miniature disengaging of light-emitting component 500 load in subsequent technique
Structure base board 400.
Describe the structure of miniature light-emitting component 500 in detail herein.In present embodiment, patterning adhesion layer 522 ' has
Relative bottom surface 522A and top surface 522B, wherein, bottom surface 522A and top surface 522B relative set see it is foregoing, in this no longer
Superfluous words.Light emitting diode 530 is arranged at the top surface 522B of adhesion layer 522.Reflecting layer 512 is arranged at the bottom surface 522A of adhesion layer.
In this, light emitting diode 530 electrically completely cuts off with reflecting layer 512.Reflecting layer 512 has multiple valley 512P and multiple valley 512V
With the surface 512A to be risen and fallen with height.The valley 512P in reflecting layer 512 than valley 512V closer to light emitting diode 530, its
In, before the valley 512P and valley 512V in reflecting layer 512 and the bottom surface 522A of patterning adhesion layer relative set see
State, in this no longer superfluous words.
In multiple embodiments of the present invention, such as valley 300P ' shape and/or valley 512P stereograms, such as：
Can be quadrangular pyramid, circular cone or other suitable shapes.In this, there is valley 512P triangular cross-section (see Figure 10 or figure
11), valley 512P triangle base angle θ A have various appropriate angles, e.g., from about 50 to 60 degree, are imitated with reaching more preferable light
Fruit.By taking the triangle circular cone with triangular cross-section as an example, the experimental data of following table one can be obtained：
In above table, " base angle θ A are 0 degree " represents that patterning photoresistance 300 ' is not provided with valley 300P ' and/or pattern
Change the situation that adhesion layer 522 ' is not provided with valley 522P.When patterning photoresistance 300 ' designs valley 300P ' and/or patterns glutinous
When layer 522 ' and setting valley 522P base angle θ A to be spent for 50 to 60, luminance gain can be obtained and compared to patterning photoresistance
300 ' are not provided with preferably going out for valley 300P ' and/or the patterning setting valley of adhesion layer 522 ' 522P (base angle θ A are 0 degree)
Light effect.Wherein, set valley 522P's when patterning photoresistance 300 ' designs valley 300P ' and/or patterns adhesion layer 522 '
When base angle θ A are about 55 degree, preferable light extraction efficiency can be obtained and face luminance gain.If illustrating by taking Figure 10 as an example, patterning
The top angle of the valley 300P ' sections of photoresistance 300 ' is as drift angle, and the lowermost end angle of valley 300P ' sections is as base angle
θA.If illustrating by taking Figure 11 as an example, pattern adhesion layer 522 ' valley 522P sections top (such as：It is closer to light
Diode 530) angle as drift angle, the lowermost ends of valley 522P sections (such as：Further away from light emitting diode 530) angle, can
It is considered as two adjacent valleys 512V lines with the angle of valley 522P sides section views as base angle θ A.
In the present embodiment, supporting part FC self-reflections layer 512 protrudes towards the direction away from light emitting diode 530, wherein
Supporting part FC material includes reflecting layer 512 with patterning the material of at least one of which of adhesion layer 522 '.In present embodiment
In, supporting part FC includes reflection extension 514 and sticks together extension 524, sticks together extension 524 from patterning adhesion layer 522 '
Protruded towards the direction away from light emitting diode 530, such as：Patterning adhesion layer 522 ' (can towards the remote bottom surface of light emitting diode 530
Be considered as away from patterning adhesion layer 522 ' top surface 522B) direction protrude, wherein sticking together extension 524 is arranged at reflection extension
Between 514 and patterning adhesion layer 522 '.In other embodiment, supporting part FC can be only comprising reflection extension 514.Or
Person, supporting part FC, which can be included only, sticks together extension 524.
In some embodiments, passivation layer 540 is arranged at the side 530S of light emitting diode 530, and extends over figure
The side 522S of case adhesion layer 522 '.In some embodiments, passivation layer 540 further extends to the reflecting layer of reflectance coating 510
512, and passivation layer 540 is almost coated light emitting diode 530 and patterning adhesion layer 522 ' completely with reflectance coating 510
Come, can more increase the resistivity for environment.
In present embodiment, supporting part FC is located at the underface of light emitting diode 530, and can maximumlly utilize load
Space on structure base board 400.In some embodiments of the present invention, supporting part FC has width W1 in first direction D1, lights
Diode 530 in first direction D1 there is width W2, supporting part FC width W1 to be less than the width W2 of light emitting diode 530.By
This, the contact area (i.e. surface 514A area) of miniature light-emitting component 500 and carrier substrate 400 is less than miniature light-emitting component
500 in the projected area of carrier substrate 400.Consequently, it is possible to supporting part FC can provide the work(of fixed miniature light-emitting component 500
Effect, and in subsequent transfer step miniature light-emitting component 500 can be made to be left more easily from carrier substrate 400.In part
In embodiment, the ratio that can design width W1 and width W2 is 1：10, to preferably reach effect that is fixed and being easily isolated
Fruit, but not limited to this.
As it was previously stated, reflecting layer 512 can select the material that reflectivity is more than 80%.Or in other embodiment,
Reflecting layer 512 may be selected that provides the transparent of total reflection effect in reflectance coating 510 with patterning the interface of adhesion layer 522 '
Material or substantially transparent material.According to this law (Snell ' s law) like this：N1sin θ 1=n2sin θ 2, n1 is reflecting layer
512 refractive index, n2 are the refractive index of adhesion layer 522.In order to meet total reflection condition, design θ 1 is 90 degree, and n1sin θ 1≤
N2sin θ 2, and θ 2 is incidence angle and the angle to be reflected.Thus, you can obtain n1/n2≤sin θ 2.With reference to upper table
One, in one embodiment, it is assumed that micro-structural (such as：Pattern photoresistance 300 ' valley 300P ' sections) base angle θ A be about 55
Degree, when light sends from light emitting diode 530 and goes to reflecting layer vertically downward, in reflectance coating 510 and patterning adhesion layer
The incidence angle θ 2=55 degree at 522 ' interface, i.e. incidence angle θ 2 are equal to base angle θ A.In one embodiment, as refractive index n2=1.2
When, then it can obtain n1≤0.98 (only calculating).In another embodiment, as refractive index n2=2, then n1≤1.64 be can obtain.
Or in another embodiment, it is assumed that in reflectance coating 510 and the incidence angle θ 2=55 at the interface of patterning adhesion layer 522 '
Degree, when n1 scope is 1.2 to 1.6, now n2 should be greater than 1.46 to 1.95 scope.In other words, when reflecting layer 512 is adjacent
When connecing air, reflectance coating 510 can be any suitable material and have the refractive index arranged in pairs or groups with patterning adhesion layer 522 ', without
It is limited to metal or alloy material.
Then, Fig. 1 step 122 and Figure 12 is come.Miniature light-emitting component 500 is drawn with transfer head 600, makes miniature hair
Optical element 500 departs from carrier substrate 400.In this, transfer head 600 can be electrostatic transfer head, stickiness transfer head, Fan get Wa Erli
Transfer head, mechanical transfer head or other suitable transfer heads.For example, polymethyl siloxane can be used
(polydimethylsiloxane；PDMS) transfer head or other suitable material transfer heads, it has faint adhesive properties.
Because the contact area (i.e. surface 514A area) of miniature light-emitting component 500 and carrier substrate 400 is less than miniature
Light-emitting component 500 in the projected area of carrier substrate 400, consequently, it is possible to pickup (such as:Draw) miniature light-emitting component 500
During, the adhesion of miniature light-emitting component 500 and carrier substrate 400 is very small, and be easy to miniature light-emitting component 500 by turn
The pickup for moving first 600 departs from carrier substrate 400.In this, can by foregoing transfer head, such as：Electrostatic transfer head, stickiness turn
Move it is first-class come pick up (such as:Draw) miniature light-emitting component 500.
Then, Fig. 1 step 124 and Figure 13 is come.Miniature light-emitting component 500 is positioned over and received on substrate 700.In
This, receives substrate 700 and is provided with adhesion layer 800, the supporting part FC of miniature light-emitting component 500 may be inserted into adhesion layer 800.In
In some embodiments, it can be array base palte to receive substrate 700, and array base palte includes multiple active member (not shown), more
Individual wire (not shown) and multiple electrode pads (not shown).Wherein, miniature light-emitting component 500 one of them correspond to active element
Part (not shown) one of them, corresponding to electronic pads (not shown) one of them with corresponding to multiple wire (not shown) wherein one
Person, the first electrode 534 of one of them of light emitting diode 530 are electrically connected with corresponding active member (not shown), and luminous two
The second electrode 535 of one of them of pole pipe 530 is electrically connected with corresponding electronic pads (not shown), and active member (not shown)
It is electrically connected with corresponding wire (not shown).
Accordingly, some embodiments of the invention can provide a kind of display device 900, and display device 900 includes array
Substrate (receiving substrate 700), adhesion layer 800 and foregoing miniature light-emitting component 500.Adhesion layer 800 is arranged at array base
On plate (receiving substrate 700).Miniature light-emitting component 500 is arranged on array base palte (receiving substrate 700), and miniature luminous
Element 500 is attached on array base palte (receiving substrate 700) via adhesion layer 800.In some embodiments of the present invention,
Miniature light-emitting component 500 further includes supporting part FC, toward array base palte (receiving substrate 700) extension, wherein supporting part FC material
Material includes reflecting layer 512 and the material for patterning at least one of which of adhesion layer 522 '.In this, the material of adhesion layer 800 can be with
It is identical or different on material with patterning adhesion layer 522 '.Wherein, when the present invention is display device 900, in the absence of figure
Transfer head 600 shown in 13.
Figure 14 is the diagrammatic cross-section according to the miniature light-emitting component 500 of some embodiments of the present invention.In this implementation
Mode is in the difference of Figure 11 embodiment：In present embodiment, supporting part FC be located at light emitting diode 530 just under
Side.In this, supporting part FC is about 1 micron to 20 microns in the projected length L1 on carrier substrate 400, e.g., from about 5 microns, with
Reach fixed effectiveness in limited space.
In this, supporting part FC is only comprising reflection extension 514.It will be understood that in other embodiment, branch can be designed
Support part FC includes reflecting layer 512 and reflection extension 514, and now also supporting part FC be not located at light emitting diode 530 just
Lower section.Or in other embodiment, supporting part FC can be designed and be located at the underface of light emitting diode 530, and now propped up
Support part FC is only comprising reflection extension 514
The other details of present embodiment substantially as described above, will not be repeated here.
Figure 15 is the diagrammatic cross-section according to the miniature light-emitting component 500 of some embodiments of the present invention.In this implementation
Mode is in the difference of Figure 11 embodiment：In present embodiment, reflecting layer 512 includes central area CA and peripheral region PA,
Peripheral region PA is arranged on the outside of central area CA, and centrally located area CA valley 512P two neighbor distances are the first distance DA1, position
In peripheral region PA valley 512P two neighbor distances be second distance DA2, wherein the first distance DA1 and second distance DA2 is
It is unequal.For example, in this, the first distance DA1 is more than second distance DA2, and makes the valley 512P's that peripheral region PA sets
Valley 512P of the density more than central area CA density.Thereby, the extraction yield of rim ray can be increased, to prevent from luminous
The light of diode 530 is hidden after reflecting layer 512 is reflected by the first electrode 534 of light emitting diode 530 and second electrode 535
Gear gets off.
In present embodiment, central area CA can be a round shape, and peripheral region PA can be the ring-type around the round shape.In other
In embodiment, central area CA and peripheral region PA can be only the different zones on a direction, rather than with annular arrangement.In part
In embodiment, the density that can design valley 512P is become big by center or become larger laterally.Present embodiment other
Details substantially as described above, will not be repeated here.
Figure 16 is the diagrammatic cross-section according to the miniature light-emitting component 500 of some embodiments of the present invention.In this implementation
Mode is in the difference of Figure 11 embodiment：In present embodiment, the valley 512P in reflecting layer 512 is boss shape.Instead
Penetrate the valley 512P of layer 512 section have it is round-shaped.The other details of present embodiment substantially as described above, herein no longer
Repeat.
Figure 17 is the diagrammatic cross-section according to the miniature light-emitting component 500 of some embodiments of the present invention.In this implementation
Mode is in the difference of Figure 11 embodiment：In present embodiment, supporting part FC close to the surface of carrier substrate 400 be for
Tapered shape, such as：Wider at the top of supporting part FC, past supporting part FC bottoms are narrower, then supporting part FC and carrier substrate 400
Contact area is small compared with Figure 11.Thereby, contact area (the i.e. surface of miniature light-emitting component 500 and carrier substrate 400 can be reduced
514A area), consequently, it is possible to pickup (such as：Draw) during miniature light-emitting component 500, miniature light-emitting component 500
It is very small with the adhesion of carrier substrate 400, and it is easy to miniature light-emitting component 500 to depart from carrier base by the pickup of transfer head 600
Plate 400.
The other details of present embodiment substantially as described above, will not be repeated here.
With reference to Figure 11 and Figure 18.The miniature hair of Figure 18 (a), (b) with (c) for multiple embodiments according to the present invention
Multiple valley 512P and multiple valley 512V in the reflecting layer 512 of optical element 500 schematic diagram.Dashed box lights to represent miniature
Element 500 is in the upright projection scope of carrier substrate 400.In (a) embodiment, the surface 512A in reflecting layer 512 can be
Two-dimensional directional has height to change, such as valley 512P can be matrix spot distribution or random number spot distribution.In this, reflecting layer
512 valley 512P is cone shape, should not limit the scope of the present invention with this.In other embodiment, valley 512P can
For elliptic conic shape, corner vertebra shape, triangular pyramidal.
Or in (b) embodiment, the surface 512A in reflecting layer 512 only can have height to change in one-dimensional square, peak
Portion 512P can extend towards a direction with valley 512V, and have height distributional difference in other direction.In present embodiment, valley
512P is strip, and it can have triangle, semiellipse section etc..
In (c) embodiment, the valley 512P and valley 512V in reflecting layer 512 can be distributed with concentric circles, wherein propping up
Support part FC can be located at the center of circle of this concentric circles.In present embodiment, valley 512P is strip, and it can have triangle, half
Elliptical profile etc..It will be understood that the valley 512P and valley 512V in reflecting layer 512 position distribution, depth, shape can regard in fact
Border situation and adjust, the scope of the present invention should not be limited with this.
In multiple embodiments of the present invention, by the setting of supporting part, miniature light-emitting component and carrier substrate are reduced
Adhesion, in order to the transfer of miniature light-emitting component.In addition, the shape in the reflecting layer of miniature light-emitting component can be also designed, with profit
In the light-emitting line distribution for improving miniature light-emitting component.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Know those skilled in the art when can be made according to the present invention it is various it is corresponding change and deformation, but these corresponding change and become
Shape should all belong to the protection domain of appended claims of the invention.
Claims (19)
1. a kind of miniature light-emitting component, it is characterised in that include：
One patterning adhesion layer, has a relative bottom surface and a top surface；
One light emitting diode, the top surface of the patterning adhesion layer is arranged at, the wherein light emitting diode comprises at least one first
Semiconductor layer, second semiconductor layer overlapping with first semiconductor layer part, a first electrode connect first semiconductor
Layer and a second electrode connect second semiconductor layer, and the doping type of first semiconductor layer and second semiconductor layer
Doping type is different；And
One reflecting layer, is arranged at the bottom surface of the patterning adhesion layer, and the reflecting layer has multiple first valleys and multiple first
Surface of the valley to be risen and fallen with a height.
2. miniature light-emitting component according to claim 1 a, it is characterised in that supporting part is further included, from the reflecting layer court
Direction away from the light emitting diode protrudes, and wherein the supporting part includes the reflecting layer and the patterning adhesion layer wherein at least one
Person.
3. miniature light-emitting component according to claim 2, it is characterised in that the supporting part includes：
One reflection extension；And
One sticks together extension, is protruded from the patterning adhesion layer towards the direction away from the light emitting diode, wherein this sticks together extension
Portion is arranged between the reflection extension and the patterning adhesion layer.
4. miniature light-emitting component according to claim 1, it is characterised in that the patterning adhesion layer has more multiple valleys
With multiple valley with the surface with a height fluctuating, and respectively valley of the patterning adhesion layer corresponds to the respectively first peak
Portion, and respectively valley of the patterning adhesion layer corresponds to respectively first valley.
5. miniature light-emitting component according to claim 1, it is characterised in that further include：
One passivation layer, is arranged at the side of the light emitting diode, and extends over the side of the patterning adhesion layer.
6. miniature light-emitting component according to claim 5, it is characterised in that the passivation layer further extends to the reflecting layer.
7. miniature light-emitting component according to claim 1, it is characterised in that the supporting part has one the in a first direction
One width, the light emitting diode has one second width in the first direction, and first width of the supporting part is less than the hair
Second width of optical diode.
8. miniature light-emitting component according to claim 1, it is characterised in that the reflecting layer includes a central area and a periphery
Area, the peripheral region are arranged on the outside of the central area, and two neighbor distances of those valleys positioned at the central area for one first away from
From two neighbor distances positioned at those valleys of the peripheral region are a second distance, wherein first distance and the second distance
To be unequal.
9. miniature light-emitting component according to claim 1, it is characterised in that the reflecting layer includes metal, alloy, metal salt
Class, alloy salt or foregoing combination.
10. a kind of display device, it is characterised in that include：
Array basal plate；
One adhesion layer, it is arranged on the array base palte；And
Multiple miniature light-emitting components as any one of claim 1 to 8, wherein those miniature light-emitting components are arranged at this
On array base palte, and those miniature light-emitting components are attached on the array base palte via the adhesion layer.
11. display device according to claim 10, it is characterised in that the miniature light-emitting component further includes：
One supporting part, extend toward the array base palte, wherein the material of the supporting part includes the reflecting layer and the patterning adhesion layer
The material of at least one of which.
12. a kind of transition support plate device, it is characterised in that include：
One carrier substrate；
Miniature light-emitting component as any one of claim 1 to 10, the wherein miniature light-emitting component are arranged at the carrier
On substrate, wherein the miniature light-emitting component includes a supporting part, and the wherein material of the supporting part includes the reflecting layer and the pattern
Change the material of adhesion layer at least one of which；And
One patterning photoresist layer, is arranged between the carrier substrate and the miniature light-emitting component, wherein the patterning photoresist layer has
Have multiple second valleys and multiple second valley, wherein those first valleys and those first valley be correspondingly arranged in those second
In valley and those second valley, and the inner surface of the supporting part of the miniature light-emitting component toward the carrier substrate extends.
13. transition support plate device according to claim 12, it is characterised in that the patterning photoresist layer has an opening,
And the supporting part of the miniature light-emitting component connects the carrier substrate by the opening.
14. transition support plate device according to claim 12, it is characterised in that the supporting part directly connects with the carrier substrate
Touch.
A kind of 15. method for manufacturing miniature light-emitting component, it is characterised in that include：
A photoresist layer is formed on a carrier substrate；
By the patterned surface of the photoresist layer, a patterning photoresist layer is formed；
A reflecting layer is formed on the patterning photoresist layer, wherein surface of the reflecting layer along the patterning photoresist layer sets and had
There is the surface that a height rises and falls；
An adhesion layer is formed on the reflecting layer, wherein the bottom of the adhesion layer is the surface that a height rises and falls；
One light emitting diode is set, on the adhesion layer；
This is sticked together into pattern layers, forms a patterning adhesion layer；And
The patterning photoresist layer is removed.
16. the method for the miniature light-emitting component of manufacture according to claim 15, it is characterised in that the reflecting layer has multiple
The surface of first valley and multiple first valley to be risen and fallen with the height, the patterning photoresist layer have multiple second valleys with
Multiple second valley, and those first valleys are correspondingly arranged in those second valleys and those second valley with those first valley
On, by the patterned surface of the photoresist layer formed using a nanoimprint step.
17. the method for the miniature light-emitting component of manufacture according to claim 15, it is characterised in that further include：
Before the patterned surface by the photoresist layer, form one and be opened in the photoresist layer；And
A reflection extension is formed in the opening, wherein the reflection extension is identical with the material in the reflecting layer.
18. the method for the miniature light-emitting component of manufacture according to claim 15, it is characterised in that further include：
Before the patterned surface by the photoresist layer, form one and be opened in the photoresist layer；And
Form one and stick together extension in the opening, wherein the adhesion layer is identical with the material that this sticks together extension.
19. the method for the miniature light-emitting component of manufacture according to claim 15, it is characterised in that further include：Cover a figure
Case passivation layer extends over the side of the light emitting diode and the side of the patterning adhesion layer on the light emitting diode
Side.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106124760A TWI625871B (en) | 2017-07-24 | 2017-07-24 | Micro light-emitting device, method for fabricating the same, and display device and transient carrier device using the same |
| TW106124760 | 2017-07-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107579141A true CN107579141A (en) | 2018-01-12 |
| CN107579141B CN107579141B (en) | 2019-11-12 |
Family
ID=61038776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710893929.5A Active CN107579141B (en) | 2017-07-24 | 2017-09-28 | Micro light-emitting element and manufacturing method thereof, display device and transition carrier plate device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107579141B (en) |
| TW (1) | TWI625871B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998878A (en) * | 2019-03-19 | 2020-04-10 | 厦门市三安光电科技有限公司 | Semiconductor light-emitting component |
| CN111834248A (en) * | 2019-04-23 | 2020-10-27 | 美科米尚技术有限公司 | Method for transferring micro-components |
| US10862005B2 (en) | 2018-07-17 | 2020-12-08 | Au Optronics Corporation | Light emitting device and manufacturing method thereof |
| CN112133795A (en) * | 2019-06-24 | 2020-12-25 | 天津三安光电有限公司 | Method for manufacturing semiconductor light-emitting element structure suitable for transfer |
| CN114156306A (en) * | 2021-11-30 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel and display device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684053B (en) * | 2018-06-21 | 2020-02-01 | 友達光電股份有限公司 | Display device and method of fabricating the same |
| TWI715108B (en) * | 2019-07-17 | 2021-01-01 | 寶力精密科技股份有限公司 | Micro light emitting diode structure and the manufacturing method thereof |
| TWI814434B (en) * | 2022-04-01 | 2023-09-01 | 友達光電股份有限公司 | Light emitting diode array substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200516783A (en) * | 2003-11-12 | 2005-05-16 | Epistar Corp | Light emitting device with micro-reflection structure layer |
| CN103222073A (en) * | 2010-08-03 | 2013-07-24 | 财团法人工业技术研究院 | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
| CN106373895A (en) * | 2016-10-27 | 2017-02-01 | 友达光电股份有限公司 | Transition carrier plate device, display panel, manufacturing method and micro-luminous element detection method |
-
2017
- 2017-07-24 TW TW106124760A patent/TWI625871B/en active
- 2017-09-28 CN CN201710893929.5A patent/CN107579141B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200516783A (en) * | 2003-11-12 | 2005-05-16 | Epistar Corp | Light emitting device with micro-reflection structure layer |
| CN103222073A (en) * | 2010-08-03 | 2013-07-24 | 财团法人工业技术研究院 | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
| CN106373895A (en) * | 2016-10-27 | 2017-02-01 | 友达光电股份有限公司 | Transition carrier plate device, display panel, manufacturing method and micro-luminous element detection method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10862005B2 (en) | 2018-07-17 | 2020-12-08 | Au Optronics Corporation | Light emitting device and manufacturing method thereof |
| CN110998878A (en) * | 2019-03-19 | 2020-04-10 | 厦门市三安光电科技有限公司 | Semiconductor light-emitting component |
| CN111834248A (en) * | 2019-04-23 | 2020-10-27 | 美科米尚技术有限公司 | Method for transferring micro-components |
| CN111834248B (en) * | 2019-04-23 | 2023-11-07 | 美科米尚技术有限公司 | Method for transferring microelements |
| CN112133795A (en) * | 2019-06-24 | 2020-12-25 | 天津三安光电有限公司 | Method for manufacturing semiconductor light-emitting element structure suitable for transfer |
| CN112133795B (en) * | 2019-06-24 | 2022-04-08 | 天津三安光电有限公司 | Method for manufacturing semiconductor light-emitting element structure suitable for transfer |
| CN114156306A (en) * | 2021-11-30 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel and display device |
| CN114156306B (en) * | 2021-11-30 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201909455A (en) | 2019-03-01 |
| TWI625871B (en) | 2018-06-01 |
| CN107579141B (en) | 2019-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107579141A (en) | Micro light-emitting element and manufacturing method thereof, display device and transition carrier plate device | |
| CN103460797B (en) | Organic Light Emitting Diode and manufacture method, image display device and lighting device | |
| JP5416207B2 (en) | LED device structure to enhance light output | |
| TWI570908B (en) | Flexible display panel, structure thereof, and method for forming the same | |
| WO2018214199A1 (en) | Micro light emitting diode display panel and manufacturing method therefor | |
| EP1683205B1 (en) | A method for producing a light-emitting device | |
| US20150171244A1 (en) | Light absorption and filtering properties of vertically oriented semiconductor nano wires | |
| US20070085098A1 (en) | Patterned devices and related methods | |
| JP2008521169A (en) | Display having a planar light source and a collector | |
| TW200919782A (en) | Light emitting device and method for manufacturing the same | |
| US20070087459A1 (en) | Patchwork patterned devices and related methods | |
| EP1462828A3 (en) | Transparent substrate for area light emitting device, a method for producing transparent substrate, and area light emitting device and liquid crystal display device | |
| US20070085083A1 (en) | Anisotropic collimation devices and related methods | |
| CN105470282B (en) | TFT-OLED (thin film transistor-organic light emitting diode) without pixel bank and preparation method | |
| CN103247733A (en) | Patterned substrate of light-emitting semiconductor, manufacturing method thereof and light-emitting semiconductor device | |
| US11233169B2 (en) | Semiconductor light emitting element with magnetic layer, manufacturing method thereof, and display device including the same | |
| JP4572645B2 (en) | Method for manufacturing light emitting device | |
| CN109904285B (en) | Light emitting diode chip and manufacturing method thereof | |
| WO2017099086A1 (en) | Substrate, optical element, mold, organic light-emitting element, organic thin-film solar cell, and method for producing substrate | |
| WO2019169770A1 (en) | Led chip and manufacturing method therefor, display panel and electronic device | |
| JP2004521475A (en) | Substrate for electroluminescent display device and method of manufacturing the substrate | |
| CN107689383A (en) | Display device and its manufacture method | |
| TWI692896B (en) | Method of manufacturing organic light-emitting diode and organic light-emitting diode | |
| CN113745376B (en) | Light emitting chip processing method, light emitting chip assembly, display device and light emitting device | |
| CN100428503C (en) | Efficient luminous diode and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |