CN109904285B - Light emitting diode chip and manufacturing method thereof - Google Patents
Light emitting diode chip and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a light emitting diode chip and a manufacturing method thereof, comprising the following steps: providing a substrate; forming an epitaxial structure on the substrate; the epitaxial structure sequentially comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer; forming a metal layer on the epitaxial structure; removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer; forming a first metal electrode on the metal layer and forming a second metal electrode on the exposed part of the second semiconductor layer; forming an insulating layer between the first metal electrode and the second metal electrode; wherein the step of forming the insulating layer includes: forming a layer of photosensitive material on a surface of the epitaxial structure; and carrying out patterning and thermal curing treatment on the photosensitive material to form the insulating layer. The manufacturing method of the light-emitting diode chip provided by the invention has the advantages that the process is simple, the product yield can be improved, and the product performance can be improved.
Description
Technical Field
The field relates to the field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) have the advantages of small size, high light emitting efficiency, energy saving, environmental protection, etc., and have currently taken a leading role in the field of illumination and display, which has become the development trend in the field of illumination and display in the 21 st century. With the development and progress of society and science and technology, the requirements of people on LEDs are higher and higher. High-light-efficiency and high-power LEDs have become the mainstream development trend of the current illumination LEDs.
The large-size LED is easy to have the condition of uneven current expansion, and the current density at the edge of the table top is too high, so that the failure of a device is easily caused. Meanwhile, poor heat dissipation performance severely restricts the operation of large-size devices under high current density. At present, a small-size device (mini/micro/nano LED) is a main means for achieving the purposes of high luminous efficiency and high power, but the mini/micro/nano LED brings higher requirements for the production process of the LED chip. In the current stage, the LED process is generally insulated in a silicon dioxide evaporation mode. On one hand, one-time register lithography is introduced in the process, and because the preparation of small-size devices requires higher precision, the final device yield is inevitably influenced by one more-time lithography; on the other hand, the distance between different metal electrodes of the small-size device is small, the deposition of silicon dioxide on the side wall is influenced, and the insulation of the device is difficult to ensure. Therefore, the insulation technology of the light emitting diode (especially small-sized device) needs to be optimized.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a light emitting diode chip and a method for manufacturing the same, which optimizes an insulation process, thereby improving a production yield and manufacturing a high-performance micro semiconductor chip.
The invention provides a light emitting diode chip, comprising:
s1: providing a substrate;
s2: forming an epitaxial structure on the substrate; the epitaxial structure sequentially comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
s3: forming a metal layer on the epitaxial structure;
s4: removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer;
s5: forming a first metal electrode on the metal layer and forming a second metal electrode on the exposed part of the second semiconductor layer;
s6: an insulating layer is formed between the first metal electrode and the second metal electrode.
Wherein, in S1, the substrate comprises a sapphire or silicon carbide or zinc oxide or gallium nitride substrate, and the back surface of the substrate can be polished.
In S2, the second semiconductor layer may be on the substrate, the light emitting layer may be on the second semiconductor layer, the first semiconductor layer may be on the light emitting layer, the second semiconductor layer may include an N-type semiconductor layer, and the first semiconductor layer may include a P-type semiconductor layer.
In S3, the metal layer is located on the first semiconductor layer, and the metal layer can be used as a contact electrode and also can be used as an emitting electrode, and the material of the metal layer can include indium tin oxide.
In S4, the step of forming the groove includes;
forming a patterned photoresist layer on the metal layer;
removing part of the metal layer and the epitaxial structure through etching to form the groove;
the groove exposes a portion of the second semiconductor layer.
In S5, the step of forming the first metal electrode and the second metal electrode includes:
forming a patterned photoresist layer on the metal layer, wherein the photoresist layer covers the groove;
forming the first metal electrode on the metal layer by deposition; and
forming another patterned photoresist layer on the first metal electrode to expose the second semiconductor layer in the groove;
and forming the second metal electrode on the second semiconductor layer by deposition.
In some embodiments, the first metal electrode may comprise a P-type metal electrode, the second metal electrode may comprise an N-type metal electrode, and the first metal electrode and the second metal electrode have the same height.
In S6, the step of forming the insulating layer includes:
forming a layer of photosensitive material on a surface of the epitaxial structure;
and carrying out patterning and thermal curing treatment on the photosensitive material to form the insulating layer.
In some embodiments, the photosensitive material is exposed on the back side of the epitaxial structure, and a patterned photosensitive material is obtained through development, the photosensitive material is a liquid negative photosensitive insulating material with a thermosetting property, the height of the insulating layer is higher than the height of the first metal electrode and the second metal electrode, and a part of the insulating layer is located on the first metal electrode and the second metal electrode.
The invention provides a light emitting diode chip, comprising:
a substrate;
the epitaxial structure is positioned on the substrate and comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
a metal layer on the first semiconductor layer of the epitaxial structure;
a plurality of grooves on the substrate exposing a portion of the second semiconductor layer;
a first metal electrode on the metal layer; and
the second metal electrode is positioned on the second semiconductor layer in the groove;
and the insulating layer is positioned between the first metal electrode and the second metal electrode.
The invention provides a light-emitting diode chip and a manufacturing method thereof, which effectively avoid the damage to a first semiconductor layer and effectively improve the contact characteristic of the light-emitting diode chip by optimizing the preparation technology of an insulating layer, and simultaneously, a metal layer of the light-emitting diode chip is allowed to be used as a contact electrode and a reflecting electrode, so that the contact characteristic same as that of a large-size chip is ensured, and the production yield of the light-emitting diode chip is effectively improved.
Drawings
FIG. 1: the present embodiment provides a flow chart of a manufacturing process of a light emitting diode chip.
FIGS. 2 to 9: the structure of each step is shown schematically.
FIG. 10: other embodiments provide a manufacturing process flow diagram of the light emitting diode chip.
FIG. 11: other embodiments provide a structural schematic diagram of the light emitting diode chip.
FIG. 12: other embodiments provide a manufacturing process flow diagram of the light emitting diode chip.
FIG. 13: other embodiments provide a structural schematic diagram of the light emitting diode chip.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Referring to fig. 1, the present embodiment provides a method for manufacturing a light emitting diode chip, which at least includes the following steps:
s1: providing a substrate;
s2: forming an epitaxial structure on the substrate; the epitaxial structure sequentially comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
s3: forming a metal layer on the epitaxial structure;
s4: removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer;
s5: forming a first metal electrode on the metal layer and forming a second metal electrode on the exposed part of the second semiconductor layer;
s6: an insulating layer is formed between the first metal electrode and the second metal electrode.
Referring to fig. 2, in S1, the substrate 10 includes a sapphire or silicon carbide or zinc oxide or gallium nitride substrate, and the back surface of the substrate 10 may be polished.
Referring to fig. 3, in S2, the second semiconductor layer 11 is located on the substrate 10, the light emitting layer 12 is located on the second semiconductor layer 11, the first semiconductor layer 13 is located on the light emitting layer 12, the first semiconductor layer 13 includes a P-type semiconductor layer, and the second semiconductor layer 11 includes an N-type semiconductor layer.
Referring to fig. 4, in S3, the metal layer 21 is located on the first semiconductor layer 13, the metal layer 21 may be used as a contact electrode and also as an emitter electrode, the material of the metal layer 21 may include, for example, indium tin oxide, and in this embodiment, the metal layer 21 may be obtained by, for example, chemical vapor deposition or magnetron sputtering or other methods.
Referring to fig. 5, in S4, a patterned photoresist layer is first formed on the metal layer 21, and then a portion of the metal layer and the epitaxial structure are removed by etching to form the recess, where the recess exposes a portion of the second semiconductor layer 11.
Referring to fig. 6, in S5, a patterned photoresist layer is first formed on the metal layer 21, where the patterned photoresist layer includes a first opening and a second opening, the first opening is located on the metal layer 21, the second opening is located on the second semiconductor 11 in the groove, the first metal electrode is located in the first opening, and the second metal electrode is located in the second opening; depositing electrodes on the photoresist, the first opening and the second opening by evaporation and/or sputtering technology, and finally stripping the metal on the photoresist and removing the photoresist on the chip to obtain the first metal electrode 221 and the second metal electrode 222; the rate of forming the electrode by the evaporation method is high; the first metal electrode 221 and the second metal electrode 222 may include at least one of gold, aluminum, chromium, nickel, titanium, and platinum, the first metal electrode 221 is electrically connected to the metal layer 21, the second metal electrode 222 is electrically connected to the second semiconductor 11, and the first metal electrode 221 and the second metal electrode 222 have the same height; the first metal electrode 221 and the second metal electrode 222 form a metal electrode 22 in height; the first metal electrode 221, the second metal electrode 222 and the metal layer 21 form an electrode 2.
Referring to fig. 7-9, in S6, a layer of photosensitive material 31 is first formed on the epitaxial structure, the photosensitive material 31 covers the first metal electrode 221 and the second metal electrode 222, then the photosensitive material 31 is exposed on the back side of the epitaxial structure, and finally the insulating layer 32 is obtained through a developing and thermal curing process. In this embodiment, the photosensitive material 31 may be, for example, a liquid negative photosensitive insulating material with thermosetting property, the insulating layer 31 is located between the first metal electrode 221 and the second metal electrode 222, and a portion of the insulating layer 32 is located on the first metal electrode 221 and the second metal electrode 222.
Referring to fig. 9, the present embodiment provides a light emitting diode chip, including: the epitaxial structure comprises a substrate 10 and an epitaxial structure, wherein the epitaxial structure is positioned on the substrate 10 and comprises a second semiconductor layer 13, a light emitting layer 12, a first semiconductor layer 11 and a metal layer 21, the second semiconductor layer 13 of the epitaxial structure is positioned, a plurality of grooves are formed in the first semiconductor layer 13 of the epitaxial structure and positioned on the substrate 10, the exposed parts of the second semiconductor layer 11 and a first metal electrode 221 are positioned on the metal layer 21, a second metal electrode 222 is positioned on the second semiconductor layer 11 in the grooves, and an insulating layer 32 is positioned between the first metal electrode 221 and the second metal electrode 222.
Referring to fig. 10, in another embodiment, a method for manufacturing a light emitting diode chip is provided, including:
s1: providing a substrate;
s2: forming an epitaxial structure on the substrate; the epitaxial structure sequentially comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
s3: forming a metal layer on the epitaxial structure;
s4: removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer;
s5: forming a first metal electrode on the metal layer and forming a second metal electrode on the exposed part of the second semiconductor layer;
s6: removing part of the first metal electrode and the epitaxial structure to form a plurality of nano-pillars;
wherein the step of forming the nanopillars comprises:
providing a nano-imprinting template;
forming a layer of mask material on the surface of the epitaxial structure;
forming a layer of imprinting glue on the mask material;
transferring the pattern on the nano-imprinting template to the imprinting adhesive in a nano-imprinting mode to obtain a periodic mask structure;
patterning the mask material by using the periodic mask structure to obtain the patterned mask material;
and patterning the first metal electrode and the epitaxial structure by using the patterned mask material to obtain the nano-pillar.
Referring to fig. 11, in another embodiment, a light emitting diode chip is further provided, including: the epitaxial structure comprises a substrate 10, an epitaxial structure, a first semiconductor layer 13, a light emitting layer 12, a second semiconductor layer 11 and a metal layer, wherein the epitaxial structure is positioned on the substrate 10 and sequentially comprises the first semiconductor layer 13, the light emitting layer 12, the second semiconductor layer 11 and the metal layer, the first semiconductor layer 11 of the epitaxial structure is positioned on the substrate 10, a plurality of grooves are formed in the substrate, part of the second semiconductor layer 11 is exposed, a first metal electrode 221 is positioned on the metal layer 21, and a second metal electrode 222 is positioned on the second semiconductor layer 11 in the grooves; and the nano-pillars 23 are located on the substrate 10 and sequentially comprise the first metal electrode 221, the metal layer 21, the first semiconductor layer 13, the light-emitting layer 12 and a part of the second semiconductor layer 11.
Referring to fig. 12, in another embodiment, a method for manufacturing a light emitting diode chip is further provided, including:
s1: providing a substrate;
s2: forming an epitaxial structure on the substrate, wherein the epitaxial structure sequentially comprises a second semiconductor layer, a light-emitting layer and a first semiconductor layer;
s3: forming a metal layer on the first semiconductor layer of the epitaxial structure, wherein the metal layer is used as a contact electrode and a reflective electrode of the first metal electrode
S4: removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer;
s5: forming a first metal electrode on the metal layer and forming a second metal electrode on the exposed part of the second semiconductor layer;
s6: removing part of the first metal electrode and the epitaxial structure to form nano columns with different structures;
s7: forming an insulating layer between the nano-pillars and between the first metal electrode and the second metal electrode;
s8: preparing a first metal electrode pad on the first metal electrode and preparing a second metal electrode pad on the second metal electrode to form mutually connected nano-pillar structures;
s9: and forming a flip-chip bonding board on the corresponding position of the light-emitting diode chip.
Referring to fig. 13, in another embodiment, a light emitting diode chip is further provided, including: the epitaxial structure comprises a substrate 10, an epitaxial structure, a first semiconductor layer 13, an electrode 2, a second semiconductor layer 11, a light-emitting layer 12, a first semiconductor layer 13, a metal layer 21, a metal electrode 22 and a bonding pad 24, wherein the metal layer 21 is positioned on the first semiconductor layer 13, and the metal layer 21 is used as a contact electrode and a reflecting electrode of a first metal electrode 221; the metal electrode 22 comprises a first metal electrode 221 and a second metal electrode 222, the first metal electrode 221 is located on the metal layer 21, and the second metal electrode 222 is located on the second semiconductor layer 13; the bonding pad 24 includes a first metal electrode bonding pad 241 and a second metal electrode bonding pad 242, the first metal electrode bonding pad 241 is located on the first metal electrode 221, the second metal electrode bonding pad 242 is located on the second metal electrode 222, the nano-columns 23 are located on the substrate 10, the first metal electrode 221 is included, the metal layer 21 is located on the first semiconductor layer 13, the light-emitting layer 12 and a part of the second semiconductor layer 11, the insulating layer 32 is located between the adjacent nano-columns 23, the first metal electrode 221 is located between the second metal electrode 222, the flip chip bonding board 4 is located on a position corresponding to the light-emitting diode chip, and the flip chip bonding board 4 includes a substrate 41, an insulating layer 42 and a bonding pad metal layer 43.
In summary, the invention provides a light emitting diode chip and a manufacturing method thereof, which effectively avoid damage to the first semiconductor layer and the metal electrode by improving the preparation technology of the insulating layer, and significantly improve the contact characteristics of the light emitting diode chip, and meanwhile, the metal layer can be used as the contact electrode and the reflective electrode of the first metal electrode, so that the contact characteristics same as those of a large-sized chip are ensured, and the product rate of the light emitting diode chip is effectively improved.
Claims (10)
1. A method for manufacturing a light emitting diode chip is characterized by comprising the following steps:
providing a substrate;
forming an epitaxial structure on the substrate; the epitaxial structure sequentially comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
forming a metal layer on the epitaxial structure;
removing part of the epitaxial structure to form at least one groove, wherein the groove exposes part of the second semiconductor layer;
forming a first metal electrode on the metal layer, and forming a second metal electrode on the exposed portion of the second semiconductor layer, wherein the metal layer is used as a contact electrode and a reflective electrode of the first metal electrode;
forming a patterned photoresist layer on the metal layer, wherein the patterned photoresist layer comprises a first opening and a second opening, the first opening is positioned on the metal layer, and the second opening is positioned on the second semiconductor in the groove; the first metal electrode is positioned in the first opening, and the second metal electrode is positioned in the second opening;
removing part of the first metal electrode and the epitaxial structure to form nano columns with different structures;
preparing a first metal electrode pad on the first metal electrode and preparing a second metal electrode pad on the second metal electrode to form mutually connected nano-pillar structures;
forming a flip-chip bonding board on the corresponding position of the light-emitting diode chip;
forming an insulating layer between the first metal electrode and the second metal electrode;
wherein the step of forming the insulating layer includes:
forming a layer of photosensitive material on a surface of the epitaxial structure;
and carrying out patterning and thermal curing treatment on the photosensitive material to form the insulating layer.
2. The method of manufacturing of claim 1, wherein the step of forming the groove comprises:
forming a patterned photoresist layer on the metal layer;
and removing part of the metal layer and the epitaxial structure to form the groove.
3. The manufacturing method according to claim 1, wherein the step of forming the first metal electrode and the second metal electrode includes:
forming a patterned photoresist layer on the metal layer, wherein the photoresist layer covers the groove;
forming the first metal electrode on the metal layer by deposition; and
forming another patterned photoresist layer on the first metal electrode to expose the second semiconductor layer in the groove;
and forming the second metal electrode on the second semiconductor layer by deposition.
4. The manufacturing method according to claim 1, characterized in that: the first metal electrode and the second metal electrode are equal in height.
5. The manufacturing method according to claim 1, characterized in that: the first semiconductor layer includes a P-type semiconductor layer, and the second semiconductor layer includes an N-type semiconductor layer.
6. The manufacturing method according to claim 1, characterized in that: the insulating layer is located between the first metal electrode and the second metal electrode.
7. The manufacturing method according to claim 1, characterized in that: and part of the insulating layer is positioned on the first metal electrode and the second metal electrode.
8. The manufacturing method according to claim 1, characterized in that: the photosensitive material is a liquid negative photosensitive insulating material with thermosetting property.
9. The method of manufacturing according to claim 1, wherein the step of patterning the photosensitive material comprises: and exposing the photosensitive material on the back of the epitaxial structure, and developing to obtain the patterned photosensitive material.
10. A light-emitting diode chip manufactured by the manufacturing method according to any one of claims 1 to 9, comprising:
a substrate;
the epitaxial structure is positioned on the substrate and comprises a second semiconductor layer, a light emitting layer and a first semiconductor layer;
a metal layer on the first semiconductor layer of the epitaxial structure;
a plurality of grooves on the substrate exposing a portion of the second semiconductor layer;
a first metal electrode on the metal layer; and
the second metal electrode is positioned on the second semiconductor layer in the groove;
and the insulating layer is positioned between the first metal electrode and the second metal electrode.
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| CN110212062A (en) * | 2019-06-20 | 2019-09-06 | 合肥彩虹蓝光科技有限公司 | A kind of inverted light-emitting diode (LED) and its manufacturing method |
| CN111211143A (en) * | 2020-01-13 | 2020-05-29 | 南京中电熊猫平板显示科技有限公司 | Miniature light-emitting diode display back plate and manufacturing method thereof |
| CN113363174A (en) * | 2020-05-27 | 2021-09-07 | 台湾积体电路制造股份有限公司 | Semiconductor device and method of forming the same |
| CN114497315A (en) * | 2022-02-15 | 2022-05-13 | 中国科学院半导体研究所 | LED chip structure and preparation method thereof |
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