CN205231113U - Adopt photoetching glue to make LED white light chip of protective layer - Google Patents
Adopt photoetching glue to make LED white light chip of protective layer Download PDFInfo
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- CN205231113U CN205231113U CN201520983950.0U CN201520983950U CN205231113U CN 205231113 U CN205231113 U CN 205231113U CN 201520983950 U CN201520983950 U CN 201520983950U CN 205231113 U CN205231113 U CN 205231113U
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Abstract
The utility model discloses an adopt photoetching glue to make LED white light chip of protective layer, including the substrate, N type semiconductor layer, luminescent layer and P type semiconductor layer has set gradually on the substrate, form the LED wafer, wherein be provided with metal electrode on the semiconductor layer, the LED wafer sets up the glazed layer that hinders outward, and the photoresist layer passes through photoetching process formation by the photosensitive resist of transparent insulation, and the homogeneous mixing has phosphor powder in the photosensitive resist. The photoresist layer that adopts photoetching glue to make covers the LED wafer, because the photosensitive resist is soft material, shocks resistance, the siO2 of the rigid material of ability force rate of resistance to compression is more outstanding, so the better guard action that plays of photoresist layer substituted passivation layer, the photoresist layer replaces the passivation layer still have been reduced and has set up passivation layer and etching passivation layer twice process, has improved the production efficiency of LED luminescence chip to reduce manufacturing cost, owing to have phosphor powder in the photoresist layer, can adjust the light that the LED wafer sent for the white light simultaneously, obtain LED white light chip.
Description
Technical field
The utility model relates to LED field, is specifically related to a kind of LED white chip adopting photoresist to make protective layer.
Background technology
LED is the lighting of present extensive use, have that volume is little, brightness is high, power consumption is low, heating less, long service life, the advantage such as environmental protection, and there is various color category, be well received by consumers.Wherein the LED of white light and gold-tinted is mainly used in normal lighting.
The production of LED can be roughly divided into three steps: one is the making of LED luminescence chip, and two is the making of wiring board and the encapsulation of LED luminescence chip, and three is assemblings of LED.In LED, most important parts are LED luminescence chips, the main body of LED luminescence chip is a luminous PN junction, form primarily of N type semiconductor, P type semiconductor and the luminescent layer be clipped between the two, N type semiconductor and P type semiconductor are respectively arranged with metal electrode, and luminous after powered up.The light color that LED luminescence chip sends determines primarily of chip material, as existing LED luminescence chip adopts gallium nitride semiconductor material to make mostly, sends blue light.When adopting blue-ray LED luminescence chip to make white LED lamp, need to infiltrate yellow fluorescent powder in encapsulation step, after yellow fluorescent powder is stimulated, send gold-tinted, with the white light become after the blue light of LED luminescence chip in human eye.
In addition, existing LED luminescence chip generally covers one deck passivation layer (SiO outward at luminous PN junction
2layer), shield, passivation layer is outside equipped with photoresist layer, and photoresist layer is formed by photoresist.Because existing LED luminescence chip needs to add passivation layer and photoresist layer respectively in manufacturing process, the photoresist layer above to metal electrode and passivation layer is also needed to etch respectively afterwards, metal electrode is exposed, operation is loaded down with trivial details, make trouble, and after chip finally completes, also need to spend glue and photoresist layer is removed, increase cost; Meanwhile, due to SiO
2be hard material, shock resistance, measuring body ability are poor, and passivation layer can not play a protective role very well.
Summary of the invention
For overcoming the deficiencies in the prior art; the purpose of this utility model is to provide a kind of LED white chip adopting photoresist to make protective layer; utilize the photoresist of flexible material to replace passivation layer to protect chip body, in photoresist, infiltrate fluorescent material simultaneously, make LED luminescence chip send white light.
The utility model is the technical scheme solving the employing of its technical problem:
A kind of LED white chip adopting photoresist to make protective layer; comprise substrate; described substrate is disposed with n type semiconductor layer, luminescent layer and p type semiconductor layer; form LED wafer; described n type semiconductor layer and p type semiconductor layer are respectively arranged with metal electrode; also comprise the photoresist layer directly overlayed outside LED wafer, described photoresist layer is formed by photoetching process by the photoresist of transparent insulation, and in described photoresist, Homogeneous phase mixing has fluorescent material.
As the further improvement of technique scheme, described LED wafer adopts gallium nitride material make and send blue light.
As the further improvement of technique scheme, in described photoresist, Homogeneous phase mixing has yellow fluorescent powder.
As the further improvement of technique scheme, in described photoresist, be also mixed with red fluorescence powder.
As the further improvement of technique scheme, described photoresist layer is provided with the breach that metal electrode is exposed.
The beneficial effects of the utility model are:
The photoresist layer that the utility model adopts the photoresist being impregnated with fluorescent material to make covers LED wafer, because photoresist is flexible material, and the SiO of shock resistance, measuring body energy force rate hard material
2more outstanding, therefore photoresist layer can replace passivation layer and better plays a protective role; Photoresist layer replacement passivation layer also reduces and arranges passivation layer and etch passivation layer two procedures, improves the production efficiency of LED luminescence chip, and reduces manufacturing cost; Simultaneously due in photoresist layer with fluorescent material, the light that LED wafer sends can be adjusted to white light, obtain LED white chip.
Accompanying drawing explanation
Be described further below in conjunction with accompanying drawing and example.
Fig. 1 is a kind of structural representation adopting photoresist to make the LED white chip of protective layer of the present utility model.
Embodiment
With reference to Fig. 1; a kind of LED white chip adopting photoresist to make protective layer that the utility model provides; comprise substrate 10; described substrate 10 is disposed with from the bottom to top n type semiconductor layer 20, luminescent layer 30 and p type semiconductor layer 40; form LED wafer; wherein n type semiconductor layer 20 is provided with the metal electrode 52 be connected with power cathode, p type semiconductor layer 40 is provided with the metal electrode 51 be connected with positive source.The LED wafer of the present embodiment adopts gallium nitride material to make, and sends blue light after energising excites.
LED wafer is outside equipped with photoresist layer 60, and photoresist layer 60 adopts the photoresist being impregnated with yellow fluorescent powder to be formed by photoetching process.Photoresist directly covers LED wafer, and on photoresist layer 60, corresponding two metal electrodes 51,52 are respectively arranged with the breach that metal electrode 51,52 is exposed.Further, red fluorescence powder can also be mixed with in photoresist.Above-mentioned fluorescent material is all evenly infiltrate in photoresist.
The photoresist layer 60 that the utility model adopts the photoresist being impregnated with fluorescent material to make covers LED wafer, because photoresist is flexible material, and the SiO of shock resistance, measuring body energy force rate hard material
2more outstanding, therefore photoresist layer 60 can replace passivation layer and better plays a protective role; Photoresist layer 60 replaces passivation layer and also reduces and arrange passivation layer and etch passivation layer two procedures, improves the production efficiency of LED luminescence chip, and reduces manufacturing cost; Simultaneously due in photoresist layer with yellow fluorescent powder or yellow and red fluorescence powder, the blue light that LED wafer sends can be adjusted to white light, obtain LED white chip.
The above, just preferred embodiment of the present utility model, the utility model is not limited to above-mentioned execution mode, as long as it reaches technique effect of the present utility model with identical means, all should belong to protection range of the present utility model.
Claims (5)
1. the LED white chip adopting photoresist to make protective layer, comprise substrate (10), described substrate (10) is disposed with n type semiconductor layer (20), luminescent layer (30) and p type semiconductor layer (40), form LED wafer, described n type semiconductor layer (20) and p type semiconductor layer (40) are respectively arranged with metal electrode (51; 52), it is characterized in that: also comprise the photoresist layer (60) directly overlayed outside LED wafer, described photoresist layer (60) is formed by photoetching process by the photoresist of transparent insulation, and in described photoresist, Homogeneous phase mixing has fluorescent material.
2. a kind of LED white chip adopting photoresist to make protective layer according to claim 1, is characterized in that: described LED wafer adopts gallium nitride material make and send blue light.
3. a kind of LED white chip adopting photoresist to make protective layer according to claim 2, is characterized in that: in described photoresist, Homogeneous phase mixing has yellow fluorescent powder.
4. a kind of LED white chip adopting photoresist to make protective layer according to claim 3, is characterized in that: be also mixed with red fluorescence powder in described photoresist.
5., according to the arbitrary described a kind of LED white chip adopting photoresist to make protective layer of Claims 1-4, it is characterized in that: described photoresist layer (60) is provided with and makes metal electrode (51; 52) breach exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520983950.0U CN205231113U (en) | 2015-11-30 | 2015-11-30 | Adopt photoetching glue to make LED white light chip of protective layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520983950.0U CN205231113U (en) | 2015-11-30 | 2015-11-30 | Adopt photoetching glue to make LED white light chip of protective layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205231113U true CN205231113U (en) | 2016-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520983950.0U Active CN205231113U (en) | 2015-11-30 | 2015-11-30 | Adopt photoetching glue to make LED white light chip of protective layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205231113U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489730A (en) * | 2015-11-30 | 2016-04-13 | 广东德力光电有限公司 | LED white light chip adopting photoresist as protection layer |
| CN109904285A (en) * | 2019-03-11 | 2019-06-18 | 合肥彩虹蓝光科技有限公司 | A kind of light-emitting diode chip for backlight unit and its manufacturing method |
-
2015
- 2015-11-30 CN CN201520983950.0U patent/CN205231113U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489730A (en) * | 2015-11-30 | 2016-04-13 | 广东德力光电有限公司 | LED white light chip adopting photoresist as protection layer |
| CN109904285A (en) * | 2019-03-11 | 2019-06-18 | 合肥彩虹蓝光科技有限公司 | A kind of light-emitting diode chip for backlight unit and its manufacturing method |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |