CN205282497U

CN205282497U - Full -color nitride -based LED chip structure

Info

Publication number: CN205282497U
Application number: CN201520978537.5U
Authority: CN
Inventors: 郝锐; 易翰翔; 刘洋; 许徳裕
Original assignee: Guangdong Deli Photoelectric Co ltd
Current assignee: Guangdong Deli Photoelectric Co ltd
Priority date: 2015-11-30
Filing date: 2015-11-30
Publication date: 2016-06-01
Anticipated expiration: 2025-11-30

Abstract

The utility model discloses a full -color nitride -based LED chip structure, including nitride -based's LED wafer, the LED wafer includes the substrate, has set gradually N -GaN layer, luminescent layer and P -GaN layer on the substrate, and the LED wafer is provided with the photoresist layer of transparent insulation outward, and the different zone mixes different particle sizes and different types of quantum dot respectively in the photoresist layer, makes the LED chip form red light zone and green light zone. The utility model discloses a full -color nitride -based LED chip utilizes and to mix the photoresist layer that has the quantum dot, and the blue light that sends nitride -based's LED wafer changes ruddiness and green glow respectively into, cooperates blue light shape to help the glory, simultaneously, because the photoresist layer adopts mild photosensitive resist to make, the substituted passivation layer is better plays the guard action, the photoresist layer replaces the passivation layer still have been reduced and has set up passivation layer and etching passivation layer twice process, has improved the production efficiency of LED luminescence chip to reduce manufacturing cost.

Description

A kind of full-color galliumnitride base LED chip structure

Technical field

The utility model relates to LED field, is specifically related to a kind of full-color galliumnitride base LED chip structure.

Background technology

LED is the lighting of present widespread use, have that volume is little, brightness height, current consumption are low, heating less, long service life, the advantage such as environmental protection, and there is various color category, be well received by consumers. Wherein the LED of white light and Huang Guang is mainly used in daily illumination.

The production of LED can be roughly divided into three steps: one is the making of LED luminescence chip, and two is the making of wiring board and the encapsulation of LED luminescence chip, and three is the assembling of LED. Parts the most important in LED are LED luminescence chips, the main body of LED luminescence chip is that a luminous PN ties, primarily of N-type semiconductor, P-type semiconductor be clipped in the composition of luminescent layer between the two, N-type semiconductor and P-type semiconductor are respectively arranged with metal electrode, and luminous after powered up. The light color that LED luminescence chip sends determines primarily of chip material, as existing LED luminescence chip adopts gallium nitride semiconductor material to make mostly, sends blue light. When employing blue-ray LED luminescence chip makes other monochromatic LED lamp, it is necessary to mix fluorescent material in encapsulation step, become the light of other colors after the blue light of the light that fluorescent material sends after being stimulated and LED luminescence chip. But existing LED chip is generally monochromatic chip, can not obtain the effect of full color.

In addition, existing LED luminescence chip generally covers lid layer passivation layer (SiO outside luminous PN knot₂Layer), shield, photoresist layer (is formed by photoresist material) and is arranged on outside passivation layer. Owing to existing LED luminescence chip needs to add respectively passivation layer and photoresist layer in making processes, also needing afterwards the photoresist layer above metal electrode and passivation layer to be etched respectively, metal electrode is exposed, operation is loaded down with trivial details, makes trouble, increases cost; Meanwhile, due to SiO₂Being hard material, shock resistance, measuring body ability are poor, and passivation layer can not play a protective role very well.

Summary of the invention

For overcoming the deficiencies in the prior art; the purpose of this utility model is to provide a kind of full-color galliumnitride base LED chip structure; utilize the photoresist material of flexible material to replace passivation layer chip body to be protected; in photoresist layer, mix different quantum dots simultaneously form red light district and green Region; coordinate the blue light that gallium nitride based LED sends, form the effect of full color.

The utility model is the technical scheme solving the employing of its technical problem:

A kind of full-color galliumnitride base LED chip structure, comprise gallium nitrate based LED wafer, described LED wafer comprises substrate, described substrate is disposed with N-GaN layer, luminescent layer and P-GaN layer, LED wafer is outside equipped with the photoresist layer of transparent insulation, in described photoresist layer, different zones mixes variable grain degree and different types of quantum dot respectively, makes LED chip form red light district and green Region.

As the further improvement of technique scheme, between described red light district and green Region, it is provided with the chip isolation strip of insulation by etching.

As the further improvement of technique scheme, the part photoresist layer of described LED chip does not mix quantum dot, forms blue light region.

As the further improvement of technique scheme, between described blue light region and red light district, green Region, it is respectively arranged with the chip isolation strip of insulation by etching.

As the further improvement of technique scheme, described quantum dot is one or more in CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, PbS and PbTe.

As the further improvement of technique scheme, the quantum dot mixed in described green Region is one or more in ZnSe, CdSe, ZnS.

As the further improvement of technique scheme, the quantum dot mixed in described red light district is any one or two kinds of combinations in CdSe, ZnS.

As the further improvement of technique scheme, described N-GaN layer and P-GaN layer are respectively arranged with metal electrode, described photoresist layer is provided with the breach that metal electrode is exposed.

The beneficial effects of the utility model are:

Full-color galliumnitride base LED chip of the present utility model, it is respectively arranged with red light district and green Region on one chip, utilizing the photoresist layer being mixed with quantum dot, the blue light gallium nitrate based LED wafer sent changes into ruddiness and green glow respectively, coordinates blue light to form full-color light; Meanwhile, it is adopt soft photoresist material to make due to photoresist layer, the SiO of shock resistance, measuring body energy force rate hard material₂More outstanding, therefore photoresist layer can replace passivation layer and better plays a protective role; Photoresist layer replaces passivation layer and also reduces and arrange passivation layer and etch passivation layer two procedures, it is to increase the production efficiency of LED luminescence chip, and reduces manufacturing cost.

Accompanying drawing explanation

It is described further below in conjunction with accompanying drawing and example.

Fig. 1 is the sectional structure chart of full-color galliumnitride base LED chip structure of the present utility model;

Fig. 2 is the vertical view of the utility model embodiment one;

Fig. 3 is the vertical view of the utility model embodiment two.

Embodiment

With reference to Fig. 1, a kind of full-color galliumnitride base LED chip structure that the utility model provides, comprise gallium nitrate based LED wafer, described LED wafer comprises substrate 10, being disposed with N-GaN layer 20, luminescent layer 30 and P-GaN layer 40 on described substrate 10, wherein N-GaN layer 20 part is exposed to outside luminescent layer 30. The photoresist material of transparent insulation is smeared outside described LED wafer, and form photoresist layer 60 by photoetching process, the exposure zone of described N-GaN layer 20 and P-GaN layer 40 are respectively arranged with metal electrode 51,52, described photoresist layer 60 is provided with the breach that metal electrode 51,52 is exposed.

Full-color galliumnitride base LED chip of the present utility model has the light-emitting zone of two or more different colours, wherein at least comprise the red light district sending ruddiness, with the green Region sending green glow, between red light district and green Region, it is provided with the chip isolation strip of insulation by etching. Full-color galliumnitride base LED chip of the present utility model adopts the gallium nitride based LED wafer sending blue light, and in the photoresist layer 60 that red light district and green Region are corresponding, mix variable grain degree and different types of quantum dot respectively, quantum dot is subject to exciting and can send ruddiness and green glow, the blue light coordinating gallium nitride based LED wafer to send, can form full-color effect. As shown in Figure 2, the embodiment one that the utility model provides, described LED chip is divided into red light district, green Region and blue light region, separated by the chip isolation strip of insulation between different zones, wherein mixing different quantum dots in the photoresist layer 60 of red light district and green Region, the photoresist layer 60 in blue light region does not mix quantum dot. As shown in Figure 3, the embodiment two that the utility model provides, described LED chip also can only be divided into red light district and green Region, by the density of the quantum dot in allotment red light district and green Region, the blue light of the part that gallium nitride based LED wafer can be made to send appears, ruddiness and green glow after exciting with quantum dot coordinate, it is possible to form full-color effect.

Further, the quantum dot mixed in photoresist layer 60 is one or more in CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, PbS and PbTe. The quantum dot wherein mixed in green Region be preferably in ZnSe, CdSe, ZnS one or more; Any one or two kinds of combinations that the quantum dot mixed in red light district is preferably in CdSe, ZnS.

Full-color galliumnitride base LED chip of the present utility model, it is respectively arranged with red light district and green Region on one chip, utilizing the photoresist layer 60 being mixed with quantum dot, the blue light gallium nitrate based LED wafer sent changes into ruddiness and green glow respectively, coordinates blue light to form full-color light; Meanwhile, it is adopt soft photoresist material to make due to photoresist layer 60, the SiO of shock resistance, measuring body energy force rate hard material₂More outstanding, therefore photoresist layer 60 can replace passivation layer and better plays a protective role; Photoresist layer 60 replaces passivation layer and also reduces and arrange passivation layer and etch passivation layer two procedures, it is to increase the production efficiency of LED luminescence chip, and reduces manufacturing cost.

The above, just better embodiment of the present utility model, the utility model is not limited to above-mentioned enforcement mode, as long as it reaches technique effect of the present utility model with identical means, all should belong to protection domain of the present utility model.

Claims

1. a full-color galliumnitride base LED chip structure, it is characterized in that: comprise gallium nitrate based LED wafer, described LED wafer comprises substrate (10), described substrate (10) is disposed with N-GaN layer (20), luminescent layer (30) and P-GaN layer (40), LED wafer is outside equipped with the photoresist layer (60) of transparent insulation, and described LED chip is provided with red light district and green Region.

2. the full-color galliumnitride base LED chip structure of one according to claim 1, it is characterised in that: the chip isolation strip being provided with insulation between described red light district and green Region by etching.

3. the full-color galliumnitride base LED chip structure of one according to claim 2, it is characterised in that: the part photoresist layer (60) of described LED chip does not mix quantum dot, forms blue light region.

4. the full-color galliumnitride base LED chip structure of one according to claim 3, it is characterised in that: the chip isolation strip being respectively arranged with insulation between described blue light region and red light district, green Region by etching.

5. according to the arbitrary described a kind of full-color galliumnitride base LED chip structure of Claims 1-4, it is characterised in that: described N-GaN layer (20) and P-GaN layer (40) are respectively arranged with metal electrode (51; 52), described photoresist layer (60) is provided with makes metal electrode (51; 52) breach exposed.