CN205542861U

CN205542861U - LED chip structure that contains quantum dot

Info

Publication number: CN205542861U
Application number: CN201520978473.9U
Authority: CN
Inventors: 郝锐; 易翰翔; 刘洋; 许徳裕
Original assignee: Guangdong Deli Photoelectric Co ltd
Current assignee: Guangdong Deli Photoelectric Co ltd
Priority date: 2015-11-30
Filing date: 2015-11-30
Publication date: 2016-08-31
Anticipated expiration: 2025-11-30

Abstract

The utility model discloses a LED chip structure that contains quantum dot, including the substrate, N type semiconductor layer, luminescent layer and P type semiconductor layer has set gradually on the substrate, form the LED wafer, be provided with metal electrode on the semiconductor respectively, still including directly covering the photoresist layer outside the LED wafer, the photoresist layer passes through photoetching process by the photosensitive resist and forms, and the homogeneous mixing has the quantum dot in the photosensitive resist. Because the photosensitive resist is soft material, shock resistance, the siO2 of the rigid material of ability force rate of resistance to compression is more outstanding, so the better guard action that plays of photoresist layer substituted passivation layer, the photoresist layer replaces the passivation layer still have been reduced and has set up passivation layer and etching passivation layer twice process, has improved the production efficiency of LED luminescence chip to reduce manufacturing cost, while can be adjusted the light that the LED wafer sent according to the material that the quantum dot adopted owing to have the quantum dot in the photoresist layer, obtains the LED luminescence chip of required various colours.

Description

A kind of LED chip structure containing quantum dot

Technical field

The present invention relates to LED field, be specifically related to a kind of LED chip structure containing quantum dot.

Background technology

LED is present wide variety of lighting, have that volume is little, brightness is high, power consumption is low, heating less, use The advantages such as life-span length, environmental protection, and there is various color category, it is well received by consumers.Wherein white light and the LED of gold-tinted Lamp is mainly used in normal lighting.

The production of LED can be roughly divided into three steps: one is the making of LED luminescence chip, and two is the making of wiring board With the encapsulation of LED luminescence chip, three is the assembling of LED.In LED, most important parts are LED luminescence chips, and LED is luminous The main body of chip is a luminous PN junction, mainly by N-type semiconductor, P-type semiconductor be clipped in luminescent layer between the two and form, Metal electrode it is respectively arranged with on N-type semiconductor and P-type semiconductor, and luminous after powered up.The light that LED luminescence chip sends Color is mainly determined by chip material, as existing LED luminescence chip uses gallium nitride semiconductor material to make mostly, sends indigo plant Light.When employing blue-ray LED luminescence chip makes other the LED containing quantum dot, need to penetrate into fluorescent material in encapsulation step, The light of other colors is become after the blue light of the light that fluorescent material sends after being stimulated and LED luminescence chip.

Additionally, existing LED luminescence chip typically covers one layer of passivation layer (Si0 outside luminous PN junction₂Layer), play protection and make With, photoresist layer (being formed by photoresist) is arranged on outside passivation layer.Owing to existing LED luminescence chip needs point in manufacturing process Not Tian Jia passivation layer and photoresist layer, the most also need the photoresist layer above metal electrode and passivation layer are etched respectively, make gold Belonging to electrode to expose, operation is loaded down with trivial details, makes trouble, increase cost: simultaneously as Si0₂It is hard material, shock resistance, measuring body energy Power is poor, and passivation layer can not play a protective role very well.

Summary of the invention

For overcoming the deficiencies in the prior art, it is an object of the invention to provide a kind of LED chip structure containing quantum dot, profit Replace passivation layer with the photoresist of flexible material chip body is protected, in photoresist layer, penetrate into quantum dot, regulation simultaneously The light color that LED luminescence chip sends.

The present invention solves that its technical problem the technical scheme is that

A kind of LED chip structure containing quantum dot, including substrate, described substrate is disposed with n type semiconductor layer, sends out Photosphere and p type semiconductor layer, form LED wafer, and described n type semiconductor layer and p type semiconductor layer are respectively arranged with metal electricity Pole, also includes the photoresist layer directly overlaying outside LED wafer, and described photoresist layer is passed through photoetching process by the photoresist of transparent insulation Formed, in described photoresist, be uniformly mixed with quantum dot.

As the further improvement of technique scheme, described quantum dot is cadmium sulfide (CdS), cadmium selenide (CdSe), tellurium In cadmium (CdTe), zinc oxide (ZnO), zinc sulfide (ZnS), zinc selenide (ZnSe), vulcanized lead (PbS) and lead telluride (PbTe) One or more.

As the further improvement of technique scheme, described photoresist layer is provided with the breach making metal electrode expose.

The invention has the beneficial effects as follows:

The photoresist layer that the present invention uses the photoresist being impregnated with quantum dot to make covers LED wafer, owing to photoresist is soft Material, shock resistance, the Si0 of measuring body energy force rate hard material₂The most outstanding, therefore photoresist layer may replace passivation layer and preferably rises To protective effect；Photoresist layer replacement passivation layer also reduces and arranges passivation layer and etch passivation layer two procedures, improves LED and sends out The production efficiency of optical chip, and reduce manufacturing cost；Simultaneously because with quantum dot in photoresist layer, can be used according to quantum dot Material light that LED wafer is sent be adjusted, obtain required shades of colour LED luminescence chip.

Accompanying drawing explanation

It is described further below in conjunction with accompanying drawing and example.

Fig. 1 is the structural representation of a kind of LED chip containing quantum dot of the present invention.

Detailed description of the invention

With reference to Fig. 1, a kind of LED white chip using photoresist to make protective layer that the present invention provides, including substrate 10, institute State and on substrate 10, be disposed with n type semiconductor layer 20, luminescent layer 30 and p type semiconductor layer 40 from the bottom to top, form LED brilliant Circle, is wherein provided with the metal electrode 52 being connected with power cathode, p type semiconductor layer 40 is provided with on n type semiconductor layer 20 The metal electrode 51 being connected with positive source.The LED wafer of the present embodiment preferably employs gallium nitride material and makes, after energising excites Send blue light.

LED wafer is outside equipped with photoresist layer 60, and photoresist layer 60 is to use the photoresist being impregnated with quantum dot to pass through photoetching process Being formed, described quantum dot is cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc oxide (ZnO), zinc sulfide (ZnS) any one or a few the combination, in zinc selenide (ZnSe), vulcanized lead (PbS) and lead telluride (PbTe), uniformly dispersing In photoresist.Photoresist directly covers LED wafer, and on photoresist layer 60, corresponding two metal electrodes 51,52 are respectively arranged with and make The breach that metal electrode 51,52 exposes.

The photoresist layer 60 that the present invention uses the photoresist being impregnated with quantum dot to make covers LED wafer, owing to photoresist is soft Property material, shock resistance, measuring body can the Si0 of force rate hard material₂The most outstanding, therefore to may replace passivation layer more preferable for photoresist layer 60 Play a protective role；Photoresist layer 60 replacement passivation layer also reduces and arranges passivation layer and etch passivation layer two procedures, improves The production efficiency of LED luminescence chip, and reduce manufacturing cost；Simultaneously because with quantum dot in photoresist layer 60, can be according to amount The light that LED wafer is sent by the material that son point is used is adjusted, and obtains required shades of colour LED luminescence chip.

The above, simply presently preferred embodiments of the present invention and oneself, the present invention difference are limited to above-mentioned embodiment, as long as It reaches the technique effect of the present invention with identical means, all should belong to protection scope of the present invention.

Claims

1. the LED chip structure containing quantum dot, including substrate (10), described substrate (10) is disposed with N-type and partly leads Body layer (20), luminescent layer (30) and p type semiconductor layer (40), form LED wafer, and described n type semiconductor layer (20) and p-type are partly led Body layer is respectively arranged with metal electrode (51 on (40)；52), it is characterised in that: also include the light directly overlaying outside LED wafer Resistance layer (60), described photoresist layer (60) is formed by photoetching process by the photoresist of transparent insulation, uniformly mixes in described photoresist Conjunction has quantum dot.

A kind of LED chip structure containing quantum dot the most according to claim 1, it is characterised in that: described quantum dot is sulfur Cadmium (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc oxide (ZnO), zinc sulfide (ZnS), zinc selenide (ZnSe), sulfuration One or more in lead (PbS) and lead telluride (PbTe).

A kind of LED chip structure containing quantum dot the most according to claim 2, it is characterised in that: described photoresist layer (60) On be provided with and make metal electrode (51；52) breach exposed.