CN101540314A - Light-emitting diode element and forming method thereof - Google Patents
Light-emitting diode element and forming method thereof Download PDFInfo
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- CN101540314A CN101540314A CN200810085491A CN200810085491A CN101540314A CN 101540314 A CN101540314 A CN 101540314A CN 200810085491 A CN200810085491 A CN 200810085491A CN 200810085491 A CN200810085491 A CN 200810085491A CN 101540314 A CN101540314 A CN 101540314A
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- light
- emitting diode
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- conductive layer
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention provides a light-emitting diode element and a method for forming the light-emitting diode element. The light-emitting diode element comprises a base, a plurality of first light-emitting diode cores, a transparent substrate and a patterned conducting layer, wherein the plurality of light-emitting diode cores are formed on the base; the transparent substrate is arranged opposite to the base, and provided with a first surface facing the base and an opposite second surface; and the patterned conducting layer is formed on the first surface, electrically connected with the first light-emitting diode cores and then connected in series with the first light-emitting diode cores.
Description
Technical field
The present invention relates to a kind of light-emitting diode, and be particularly related to a kind of alternating-current light emitting diode element.
Background technology
Because have fast, and the advantage such as long service life of small size, low power consumption, reaction rate, light-emitting diode (LED) has been widely used in various forms of application such as home lighting, computer peripheral equipment, communication product, traffic signals sign, car light.Light-emitting diode generally include p type semiconductor layer, n type semiconductor layer, and two material layers between the pn knot.When applying forward current, can combine in pn knot place with electronics from the hole of p type semiconductor layer and discharge photon from the n type semiconductor layer in light-emitting diode.Compare with conventional illumination device (as bulb),, have very high energy conversion rate, can send high-brightness light and save the energy just only need power conversion once directly to convert electrical energy into luminous energy.
General LED lighting apparatus needs to see through additional circuit and makes LED luminous the high direct current (approximately less than 100mA) that AC power is converted to low dc voltage (between about 1V to 5V).Yet power supply can cause power loss via the process of additional circuit conversion, and except making energy conversion rate descends, the temperature that also easily makes the LED lighting apparatus raises and influences the running of LED.In addition, the employing of additional circuit will cause cost of manufacture to raise, and reduce space availability ratio.
World patent WO2006004337 discloses a kind of light-emitting diode, connects in the lead-in wire mode between each light-emitting diode, and reliability can increase with the number of light-emitting diode and reduce.U.S. Pat 20060169993 employing conducting films are used as the electric connection between each light-emitting diode, for avoiding the conducting of light-emitting diode sidewall, need first coating insulating barrier with isolated each light-emitting diode.U.S. Pat 7128438 discloses the lead that utilizes on the transparency gap thing and is used as electric connection between each light-emitting diode.
Summary of the invention
The invention provides a kind of light-emitting diode, comprise substrate, be formed at suprabasil a plurality of first LED core, transparency carrier with the setting of substrate subtend, transparency carrier has first surface towards substrate and opposed second surface, and be formed at patterned conductive layer on the first surface, and patterned conductive layer electrically connects and first LED core of connecting with first LED core.
The present invention provides a kind of method that forms light-emitting diode in addition, comprise substrate is provided, be formed with a plurality of first LED core in the substrate, transparency carrier is provided, make and the setting of substrate subtend, transparency carrier has first surface and opposed second surface, form patterned conductive layer on first surface, and counter-rotating transparency carrier, make first surface towards substrate, and aim at and to fit in the substrate, make patterned conductive layer with the electric connection of first LED core first LED core of connecting.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below.
Description of drawings
Fig. 1 shows in the embodiment of the invention, is formed with the substrate of a plurality of LED core on it.
Fig. 2 a shows in one embodiment of the invention, the profile of the transparent panel of the LED core that is used for connecting.
Fig. 2 b shows in one embodiment of the invention, the top view of the transparent panel of the LED core that is used for connecting.
Fig. 3 a shows the profile of the light-emitting diode of one embodiment of the invention.
Fig. 3 b shows the top view of the light-emitting diode of one embodiment of the invention.
Fig. 3 c shows the circuit diagram of the light-emitting diode that AC power is connected in one embodiment of the invention.
Fig. 4 shows the circuit diagram of the light-emitting diode of one embodiment of the invention.
Fig. 5 shows the profile of the light-emitting diode of another embodiment of the present invention.
Description of reference numerals
100: substrate 101: at the bottom of the epitaxial base
110: the first LED core 110p:p type electrodes
110n:n type electrode 102:n type semiconductor layer
104: luminescent layer 106:p type semiconductor layer
108: current distribution layer 112: transparency carrier
112a: first surface 112b: second surface
114: conductive layer 114a: patterned conductive layer
30: AC power 110a: second LED core
116: phosphor powder layer 100a: transparent substrates
Embodiment
The invention provides a kind of light-emitting diode and forming method thereof, see through the transparency carrier covering that will be formed with patterned conductive layer on it and fit in substrate with a plurality of LED core, a plurality of LED core see through patterned conductive layer and are one another in series, can directly supply AC power and make it luminous, need not extra circuit.
Fig. 1-3 shows the manufacturing process of one embodiment of the invention.Fig. 1 shows in the embodiment of the invention, is formed with the substrate of a plurality of LED core on it.As shown in Figure 1, at first provide substrate 100.In one embodiment, a plurality of independent LED tube cores 110 can be fitted in the substrate 100.In another embodiment, also the epitaxial substrate that can directly adopt light-emitting diode is as substrate 100, and with the extension lamination patterning on it, and forms the LED core 110 of a plurality of separation in substrate 100.Each first LED core also comprises p type electrode 110p and n type electrode 110n.In technology subsequently, p type electrode 110p will electrically contact with the patterned conductive layer on being formed at transparency carrier with n type electrode 110n, sees through patterned conductive layer and electrically connects with external power (for example AC power) or other LED core.P type electrode 110p can comprise gold, nickel, platinum, aluminium, tin, indium, chromium, titanium, aforesaid alloy, aforesaid lamination or aforesaid combination.N type electrode 110n can comprise titanium, aluminium, gold, copper, zinc, aforesaid alloy, aforesaid lamination or aforesaid combination.LED core 110 can be sent the on the whole light of single wavelength, and it can be ultraviolet light, visible light or infrared light.
In one embodiment, first LED core 110 can by at the bottom of the epitaxial base 101, n type semiconductor layer 102, p type semiconductor layer 106 and be located in n type semiconductor layer 102 and p type semiconductor layer 106 between luminescent layer 104 constituted, and directly fit in the substrate 100.In another embodiment,, fit in again in the substrate 100 earlier 101 grinding off at the bottom of the part or all of epitaxial base of a plurality of LED core 110.In one embodiment, adopt epitaxial substrate as substrate 100, and see through the lamination of epitaxial growth material layer thereon, for example comprise n type semiconductor layer 102, luminescent layer 104 in regular turn, reach p type semiconductor layer 106, then can see through the material layer that etch process removes part, and in substrate 100, form a plurality of LED core 110.101 material can be sapphire (sapphire, Al at the bottom of the epitaxial base
2O
3), carborundum, silicon or GaAs etc.110n type semiconductor layer 102, p type semiconductor layer 106, and the material of luminescent layer 104 can comprise gallium nitride, gallium phosphide, gallium arsenide-phosphide or aforesaid combination, and visual demand is to carrying out required doping in the previous materials layer.Luminescent layer 104 can be single structure, double-heterostructure (double-hetero structure, DH) or multi-quantum pit structure (multi quantum well, MQW).In addition, as shown in Figure 1, n type electrode 110n is positioned on the lower n type semiconductor layer 102, for in technology subsequently with transparency carrier on patterned conductive layer electrically connect, n type electrode 110n can comprise that n type connection pad and projection (not shown) make and have enough height (on the whole contour with p type electrode 110p) engages with patterned metal layer.
In one embodiment, also be formed with current distribution layer 108 (currentspreading layer) on the p type semiconductor layer 106, can make electric current inject the higher p type semiconductor layer 106 of resistance value more easily and more equably.The material of current distribution layer 108 can comprise metal material, for example gold, nickel, platinum, aluminium, tin, indium, chromium, titanium, aforesaid alloy, aforesaid lamination or aforesaid combination.The material of current distribution layer 108 also can comprise transparent conductive oxide, for example ITO (tin indium oxide), CTO (cadmium tin), IZO (indium zinc oxide), ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2, aforesaid lamination or aforesaid combination.In one embodiment, current distribution layer 108 is preferable selects transparent material low for light absorption and that reflectivity is low for use.In another embodiment, current distribution layer 108 also can be selected trnaslucent materials for use.
Then, be constructed for the connecting transparent panel of LED core 110.Shown in Fig. 2 a, provide transparency carrier 112.Transparency carrier can comprise bendable transparency carrier (pi for example, polyimide) or hard transparent substrate (for example glass or quartz etc.).Transparency carrier 112 has first surface 112a and opposed second surface 112b.In technology subsequently, will go up in the first surface 112a of transparency carrier 112 and form patterned conductive layer.In one embodiment, can go up prior to first surface 112a and form a conductive layer 114, then can conductive layer 114 be patterned as patterned conductive layer 114a through for example photoetching and etching, energy beam etching modes such as (as laser).In addition, also can adopt stripping technology (lift-off process), prior to forming patterning photoresist layer (not shown) on the transparency carrier 112, depositing conducting layer 114 again, and then strip pattern photoresist layer just can stay patterned conductive layer 114a on transparent panel 112.Fig. 2 b shows in one embodiment of the invention, towards the top view of the first surface 112a of transparency carrier 112.In technology subsequently, patterned conductive layer 114a will can make a plurality of first LED core 110 be one another in series as the conductive path of 110 of a plurality of first LED core in the substrate 100.Patterned conductive layer 114a also can be connected to AC power, forms the electric connection of AC power and 110 of a plurality of first LED core of connecting.The material of patterned conductive layer 114a can be transparency conducting layer, semitransparent conductive layer or opaque conductive layer.In one embodiment, the preferable transparency conducting layer of selecting for use of the material of patterned conductive layer 114a can be organic transparency conducting layer, inorganic transparent conductive layer or aforesaid combination.
Then, shown in Fig. 3 a,, make first surface 112a, and aim at and fit in the substrate 100, and form light-emitting diode in one embodiment of the invention towards substrate 100 with transparency carrier 112 counter-rotating.Can see through for example hot pressing or other suitable modes, make on the first surface 112 patterned conductive layer 114a respectively with a plurality of first LED core 110 on p type electrode engage and these a plurality of first LED core 110 of electrically connecting with n type electrode.In one embodiment, wherein the n type electrode 110n of LED core sees through the p type electrode 110p electric connection of patterned conductive layer 114a and another LED core, and the n type electrode 110n of another LED core also sees through the p type electrode 110p electric connection of other patterned conductive layers 114a and next LED core, and a tube core like this connects a tube core a plurality of first LED core 110 are together in series.Fig. 3 b shows the top view of one embodiment of the invention.See through counter-rotating transparency carrier 112 and aligning and fit in the substrate 100, the patterned conductive layer 114a on the first surface 112a of transparency carrier 112 can be one another in series a plurality of first LED core 110.
In one embodiment, patterned conductive layer 114a also is electrically connected to AC power 30.Light-emitting diode in the embodiment of the invention can directly use AC power and be luminous.Because the material behavior of LED core itself needs to apply positive bias in p type electrode 110p, and when n type electrode applies back bias voltage, just can make LED core luminous.Therefore, a plurality of LED core 110 among this embodiment will be luminous in the positive half period of AC power 30, when the voltage of AC power 30 was negative half-cycle, a plurality of LED core 110 will can't be luminous owing to being in reverse biased (reverse-biased).But because the positive negative cycle of AC power is less than the cognizable interval of naked eyes, therefore under perusal, a plurality of LED core 110 still on the whole be in continue luminous.Fig. 3 c shows the circuit diagram of the light-emitting diode that AC power is connected in one embodiment of the invention.Can adjust the number of the LED core of connecting according to circumstances, preferable each LED core that makes all is assigned to the operating voltage that size is fit to.In one embodiment, can form resistor or variable resistor and regulate the assigned operating voltage of each LED core.
In addition, the embodiment of the invention is connected a plurality of first LED core 110 other a plurality of second LED core of also can connecting except seeing through patterned conductive layer.Fig. 4 shows in one embodiment of the invention, the circuit diagram of other a plurality of second LED core of connecting.As shown in Figure 4, a plurality of first LED core 110 series system to each other is identical with the described series system of Fig. 3 b, belongs to the forward series connection.The series system of a plurality of second LED core 110a belongs to differential concatenation in contrast.The array of the LED core of two series connection is connected in parallel to each other and is also in parallel with AC power 30.When AC power 30 is in positive half period, a plurality of first LED core 110 will be not luminous with the luminous and a plurality of second LED core 110a.Otherwise when AC power 30 is in negative half-cycle, a plurality of second LED core 110a will be not luminous with luminous and a plurality of first LED core 110, use the illumination that provides more stable.The generation type of embodiment shown in Figure 4 is similar to the aforementioned embodiment.At first, provide the substrate that is formed with a plurality of first LED core and a plurality of second LED core on it.Then, on transparency carrier, form patterned conductive layer, and the transparency carrier and being engaged in the substrate of reversing can be finished just.
Fig. 5 shows the profile of the light-emitting diode of another embodiment of the present invention.As shown in Figure 5, also can form phosphor powder layer 116 in the second surface 112b of transparency carrier 112.Phosphor powder layer 116 can be in order to partially absorbing or all to absorb the light that is sent by LED core, and the light that is absorbed is converted to the lower light of wavelength, uses the color that required light is provided.The material of phosphor powder layer 116 can comprise organic fluorescent powder, inorganic fluorescent powder or aforesaid combination.In addition, the fluorescent material that can send various different color lights be can select for use in the phosphor powder layer 116, red light fluorescent powder, green light fluorescent powder, blue light fluorescent powder, gold-tinted fluorescent material or aforesaid combination for example can be comprised.In addition, in one embodiment, can form the fluorescent material of different materials in the zones of different on the second surface 112b of transparency carrier 112.Can correspond to first LED core, second LED core, a plurality of first LED core, a plurality of second LED core or aforesaid combination under each regional phosphor powder layer.Can see through different phosphor material powders and the LED core of the corresponding different light periods of its time and be in harmonious proportion required visual effect.
The embodiment of the invention has many advantages, see through simple technology a plurality of LED core of can connecting, and AC power can directly be used and luminous, do not need additional circuit that AC power is converted to DC power supply, can reduce power consumption, reduce cost of manufacture and improve space availability ratio.
Though the present invention discloses as above with a plurality of preferred embodiments; right its is not in order to limit the present invention; any person of ordinary skill in the field without departing from the spirit and scope of the present invention; when can changing arbitrarily and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (20)
1. light-emitting diode comprises:
Substrate;
A plurality of first LED core are formed in this substrate;
Transparency carrier is provided with this substrate subtend, and this transparency carrier has first surface towards this substrate and opposed second surface; And
Patterned conductive layer is formed on this first surface, and this patterned conductive layer electrically connects and this first LED core of connecting with this first LED core.
2. light-emitting diode as claimed in claim 1, wherein this first LED core comprises ultraviolet light-emitting diodes tube core, visible light emitting diode tube core, infrared light LED core or aforesaid combination.
3. light-emitting diode as claimed in claim 1, wherein this transparency carrier comprises bendable transparency carrier or hard transparent substrate.
4. light-emitting diode as claimed in claim 1, wherein this patterned conductive layer comprises transparency conducting layer, opaque conductive layer or aforesaid combination.
5. light-emitting diode as claimed in claim 1, wherein this patterned conductive layer comprises organic transparency conducting layer, inorganic transparent conductive layer or aforesaid combination.
6. light-emitting diode as claimed in claim 1 also comprises phosphor powder layer, is formed on this second surface.
7. light-emitting diode as claimed in claim 6, wherein this phosphor powder layer comprises organic fluorescent powder, inorganic fluorescent powder or aforesaid combination.
8. light-emitting diode as claimed in claim 6, wherein this phosphor powder layer comprises red light fluorescent powder, green light fluorescent powder, blue light fluorescent powder, gold-tinted fluorescent material or aforesaid combination.
9. light-emitting diode as claimed in claim 1 also comprises a plurality of second LED core, is formed in this substrate, and is one another in series through this patterned conductive layer, and in parallel with this first LED core.
10. light-emitting diode as claimed in claim 9, wherein this first LED core is the forward series connection, and this second LED core is a differential concatenation.
11. a method that forms light-emitting diode comprises:
Substrate is provided, is formed with a plurality of first LED core in this substrate;
Transparency carrier is provided, makes and this substrate subtend setting, this transparency carrier has first surface and opposed second surface;
Form patterned conductive layer on this first surface; And
This transparency carrier that reverses makes this first surface towards this substrate, and aims at and fit in this substrate, make this patterned conductive layer with this first LED core electric connection this first LED core of connecting.
12. the method for formation light-emitting diode as claimed in claim 11, wherein this first LED core comprises ultraviolet light-emitting diodes tube core, visible light emitting diode tube core, infrared light LED core or aforesaid combination.
13. the method for formation light-emitting diode as claimed in claim 11, wherein this transparency carrier comprises bendable transparency carrier or hard transparent substrate.
14. the method for formation light-emitting diode as claimed in claim 11, wherein this patterned conductive layer comprises transparency conducting layer, opaque conductive layer or aforesaid combination.
15. the method for formation light-emitting diode as claimed in claim 11, wherein this patterned conductive layer comprises organic transparency conducting layer, inorganic transparent conductive layer or aforesaid combination.
16. the method for formation light-emitting diode as claimed in claim 11 also comprises forming phosphor powder layer on this second surface.
17. the method for formation light-emitting diode as claimed in claim 16, wherein this phosphor powder layer comprises organic fluorescent powder, inorganic fluorescent powder or aforesaid combination.
18. the method for formation light-emitting diode as claimed in claim 16, wherein this phosphor powder layer comprises red light fluorescent powder, green light fluorescent powder, blue light fluorescent powder, gold-tinted fluorescent material or aforesaid combination.
19. the method for formation light-emitting diode as claimed in claim 11 wherein also comprises in this substrate being formed with a plurality of second LED core, and is one another in series through this patterned conductive layer, and in parallel with this first LED core.
20. the method for formation light-emitting diode as claimed in claim 19, wherein this first LED core is the forward series connection, and this second LED core is a differential concatenation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810085491A CN101540314A (en) | 2008-03-19 | 2008-03-19 | Light-emitting diode element and forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810085491A CN101540314A (en) | 2008-03-19 | 2008-03-19 | Light-emitting diode element and forming method thereof |
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| CN101540314A true CN101540314A (en) | 2009-09-23 |
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| CN200810085491A Pending CN101540314A (en) | 2008-03-19 | 2008-03-19 | Light-emitting diode element and forming method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185048A (en) * | 2011-04-14 | 2011-09-14 | 翁小翠 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
| CN102270628A (en) * | 2010-06-04 | 2011-12-07 | 亿光电子工业股份有限公司 | Light source module |
| CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
| CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
| CN105870114A (en) * | 2016-06-24 | 2016-08-17 | 中国科学院半导体研究所 | Light emitting device, flexible light emitting device and preparation method thereof |
-
2008
- 2008-03-19 CN CN200810085491A patent/CN101540314A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270628A (en) * | 2010-06-04 | 2011-12-07 | 亿光电子工业股份有限公司 | Light source module |
| CN102270628B (en) * | 2010-06-04 | 2013-06-05 | 亿光电子工业股份有限公司 | Light source module |
| CN102185048A (en) * | 2011-04-14 | 2011-09-14 | 翁小翠 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
| CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
| CN103000795B (en) * | 2011-09-15 | 2015-10-28 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
| CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
| CN105870114A (en) * | 2016-06-24 | 2016-08-17 | 中国科学院半导体研究所 | Light emitting device, flexible light emitting device and preparation method thereof |
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Open date: 20090923 |