CN105870114A - Light emitting device, flexible light emitting device and preparation method thereof - Google Patents
Light emitting device, flexible light emitting device and preparation method thereof Download PDFInfo
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- CN105870114A CN105870114A CN201610467039.3A CN201610467039A CN105870114A CN 105870114 A CN105870114 A CN 105870114A CN 201610467039 A CN201610467039 A CN 201610467039A CN 105870114 A CN105870114 A CN 105870114A
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- transparent conductive
- conductive film
- luminescent device
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- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a light emitting device, a flexible light emitting device and a preparation method thereof. The flexible light emitting device comprises an upper transparent conductive film, a lower transparent conductive film and a plurality of light emitting units. The light emitting units are sandwiched between and electrically connected with the upper transparent conductive film and the lower transparent conductive film, and each light emitting unit comprises two LED (light emitting diode) chips in forward-reserve parallel connection. The flexible light emitting device can be driven by an alternating-current power source, uniformity and stability in light emitting are realized, and a driving circuit is simple.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of light-emitting film and preparation method thereof.
Background technology
In recent years, due to the appearance of large quantities of new technique such as flexible display, wearable electronic,
Flexible luminescence technology is of increased attention.Flexible light-emitting film based on LED chip is sent out
Light intensity is high, and service life is long, has the most wide application prospect.Traditional light-emitting diode chip for backlight unit needs
To work under low pressure perseverance DC condition, to need to be equipped with complicated permanent DC source；Simultaneously as it is traditional
Light-emitting diode chip for backlight unit there is current expansion ability, have a series of problems such as leak channel, lead
Having caused luminescent device non-uniform light, under big electric current, luminous efficiency drastically declines.Therefore, solve
Certainly the drive circuit of luminescent device is complicated and the problem of non-uniform light, is the flexibility preparing practicality
The key of light-emitting film system.
Summary of the invention
(1) to solve the technical problem that
In view of above-mentioned technical problem, the invention provides a kind of luminescent device and preparation method thereof,
This luminescent device luminescence is uniform and stable, and drive circuit is simple.
(2) technical scheme
According to an aspect of the invention, it is provided a kind of luminescent device.This luminescent device
Including: upper transparent conductive film, lower transparent conductive film and multiple luminescence unit, described luminous single
Unit's sandwiched is also electrically connected between described upper transparent conductive film and lower transparent conductive film, described
Light unit includes the LED luminescence chip of two forward and reverse parallel connections.
According to another aspect of the present invention, it is provided that the preparation method of a kind of luminescent device.Should
Preparation method includes: transparent conductive film and lower transparent conductive film in preparation；Prepare multiple luminous single
Unit, described luminescence unit includes the LED chip of two forward and reverse parallel connections；Multiple luminescence units are arranged
The evaporation being listed in lower transparent conductive film has on the face of transparent conductive material；Transparent conductive film in attaching,
The evaporation making nesa coating has the face of transparent conductive material to be attached at the upper electrode of luminescence unit
On, form flexible light-emitting film structure.
According to another aspect of the present invention, it is provided that a kind of light-emitting device.This light-emitting device includes:
Alternating current power supply and above-mentioned luminescent device, the two ends lead-in wire of alternating current power supply is sent out with described flexibility respectively
The upper transparent conductive film of optical device, lower transparent conductive film electrically connect, for driving with exchange way
Multiple luminescence units of described luminescent device.
(3) beneficial effect
From technique scheme it can be seen that luminescent device of the present invention and preparation method thereof, luminous
Device has the advantages that
(1) it is folded in luminescence unit between two conductive films and includes that the LED of two forward and reverse parallel connections sends out
Optical chip so that luminescent device forms capacitance type structure, it is achieved ac driven light-emitting, thus simple
Change driving circuit structure；
(2) filling insulation filler between luminescence unit, insulation filler makes luminescent device
Conductive film on electric current extending transversely good, ensured that luminescent device is luminous uniformly.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention flexible light-emitting device structural representation；
Fig. 2 is the structural representation of luminescence unit in Fig. 1；
Fig. 3 is the flow chart that the embodiment of the present invention manufactures flexible light-emitting component；
Fig. 4 is the flow chart manufacturing luminescence unit in Fig. 3.
[main element]
The upper transparent conductive film of 1-；Transparent conductive film under 2-；3-luminescence unit；
4-LED chip；5-electrically-conductive backing plate；6-metallic reflector；
7-transparent electrode layer；8-the first insulation filler；9-alternating current power supply；
10-the second insulation filler.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete real
Execute example, and referring to the drawings, the present invention is described in more detail.
The present invention provides a kind of flexible light-emitting component, as shown in Figure 1, which employs capacitance structure,
Specifically include that transparent conductive film 1, lower transparent conductive film 2 and sandwiched thereof are between which
Multiple luminescence units 3.This flexibility light-emitting component can be connected respectively by external AC power circuit
Upper transparent conductive film 1, lower transparent conductive film 2 carry out driven for emitting lights, it is to avoid uses complicated perseverance
DC source.
Each luminescence unit 3 includes the LED chip 4 of two forward and reverse parallel connections, concrete structure such as accompanying drawing
Shown in 2, it metallic reflector 6 including electrically-conductive backing plate 5, being arranged on electrically-conductive backing plate, metallic reflection
Two LED chip 4 of forward and reverse parallel connection are set on layer 6, the N electrode of the i.e. first LED chip with
Metallic reflector electrically connects, and the P electrode of the second LED chip electrically connects with metallic reflector, and first
The P electrode of LED chip arranges transparent electrode layer 7 in the N electrode of the second LED chip, and this is saturating
The material of prescribed electrode layer is indium tin metal oxide (ITO), zinc oxide aluminum (AZO), copper, graphite
In alkene, CNT, nano-Ag particles, nano silver wire, polymeric membrane, composite transparent conductive film
One or its combination in any, be filled with the second insulation and fill out between metallic reflector 6 and transparent electrode layer 7
Fill thing 10, this second insulation filler 10 be filled in the first LED chip and the second LED chip it
Between and peripheral, serve the insulation made between two LEDs chips, reduce electric leakage, prevent luminous single
The effect of unit's internal short-circuit, this luminescence unit can use alternating current to drive, and two LED chip are handed over
For luminescence.
In the flexible light-emitting component shown in Fig. 1, also include being folded in equally transparent conductive film 1,
The first insulation filler 8 between lower transparent conductive film 2, this first insulation filler 8 is filled in
Between multiple luminescence units 3 and peripheral, the first insulation filler 8 make luminescent device upper,
Electric current on lower transparent conductive film is extending transversely good, has ensured that luminescent device is luminous uniformly.
Above-mentioned first, second insulation filler can be selected for PDMS, resin, electro-insulating rubber, Y2O3、
Si3N4、Al2O3、BaTiO3、MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2Deng insulation
One in material or its combination in any.
Although it will be appreciated by those skilled in the art that in the present embodiment two leading up and down of flexible light-emitting component
Conductive film is transparent conductive film, but the present invention is not limited to this, up and down the two of flexible light-emitting component
At least one in conductive film is transparent conductive film.
The present invention also provides for the manufacture method of a kind of flexible light-emitting component, as it is shown on figure 3, specifically include
Following steps:
Step S301: transparent conductive film and lower transparent conductive film in preparation, is specially saturating in flexibility
Layer of transparent conductive material it is deposited with on bright thin film；
This flexible transparent film be polyethylene terephthalate (PET), Merlon (PC),
One in polymethyl methacrylate (PMMA) or its combination in any.
This transparent conductive material be indium tin metal oxide (ITO), zinc oxide aluminum (AZO), copper,
Graphene, CNT, nano-Ag particles, nano silver wire, polymeric membrane, composite transparent conductive film
In one or its combination in any.
Step S302: prepare multiple luminescence unit, described luminescence unit includes two forward and reverse parallel connections
LED chip；
Step S303: the evaporation that multiple luminescence units are arranged in lower transparent conductive film is had electrically conducting transparent
On the face of material；Above-mentioned arrangement can with use array arrangement, random scatter, etc. various arrangement mode.
Step S304: filling the first insulation between luminescence unit and periphery is filled out on lower transparent conductive film
Fill thing, the upper electrode of luminescence unit is exposed；
Step S305: transparent conductive film in attaching so that the evaporation of upper nesa coating has transparent leading
The face of electric material is attached on the upper electrode of luminescence unit, forms flexible light-emitting film structure.
Wherein step S101 can be with S102 reversed order.
Step S302 specifically can following steps, as shown in Figure 4:
Step S302a: the non-exiting surface at electrically-conductive backing plate makes one layer of reflective metal layer；
Described electrically-conductive backing plate can select silicon substrate, aluminium base etc..
Step S302b: divide multiple unit on the electrically-conductive backing plate be formed with reflective metal layer, often
The LED luminescence chip of integrated two forward and reverse parallel connections in individual unit, and between LED luminescence chip
And peripheral filling the second insulation filler；
Step S302c: on the electrically-conductive backing plate being formed with LED luminescence chip and the second insulation filler
Evaporation layer of transparent electrode layer；
The material of described transparent electrode layer be indium tin metal oxide (ITO), zinc oxide aluminum (AZO),
Copper, Graphene, CNT, nano-Ag particles, nano silver wire, polymeric membrane, composite transparent are led
One in electrolemma or its combination in any.
Step S302d: board structure step S302c obtained, by unit cutting, forms multiple
Light unit.
LED chip in step S302b can use at Grown epitaxial layer, is followed successively by N
Type GaN, SQW, AlN electronic barrier layer, p-type GaN, epitaxial wafer is made one single chip,
And making transparency conductive electrode is formed on PN face.
Substrate can include silicon, doped silicon (doped silicon), germanium, SiGe (silicon germanium),
Semiconductor compound (semiconductor compound), or other semiconductor material one of or appoint
What combination.
It will be appreciated by those skilled in the art that the direction term mentioned in embodiment, such as " on ", D score,
"front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing, is not used for limiting this
Bright protection domain.
Unless specifically described or the step that must sequentially occur, the order of above-mentioned steps there is no be limited to
Upper listed, and can change according to required design or rearrange.
The present invention also provides for a kind of flexible light-emitting device, as shown in Figure 1, sends out including aforesaid flexibility
Optical device and alternating current power supply, the two ends lead-in wire of alternating current power supply upper and lower with luminescent device respectively
Bright conductive film electrically connects, and uses alternating current to drive luminescent device.
Particular embodiments described above, is carried out the purpose of the present invention, technical scheme and beneficial effect
Further describe, be it should be understood that the foregoing is only the present invention specific embodiment and
, be not limited to the present invention, all within the spirit and principles in the present invention, that is done any repaiies
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (14)
1. a luminescent device, it is characterised in that including:
Upper transparent conductive film (1)；
Lower transparent conductive film (2)；And
Multiple luminescence units (3), sandwiched and be electrically connected at described upper transparent conductive film (1) and
Between lower transparent conductive film (2), described luminescence unit (3) includes two forward and reverse parallel connections
LED luminescence chip.
Luminescent device the most according to claim 1, it is characterised in that described luminescence unit
(3) including:
Electrically-conductive backing plate (5)；
Metallic reflector (6), is formed on described electrically-conductive backing plate；
The LED luminescence chip of the forward and reverse parallel connection of said two, is arranged at described metallic reflector (6)
On；And
Transparent electrode layer (7), is formed on the LED luminescence chip of the forward and reverse parallel connection of said two；
The LED luminescence chip of the forward and reverse parallel connection of said two all with described transparent electrode layer (7) and institute
State metallic reflector (6) electrical connection.
Luminescent device the most according to claim 2, it is characterised in that described luminescence unit
(3) also include:
Second insulation filler (10), is folded in described metallic reflector (6) and described transparency electrode
Between layer (7), it is filled between the LED luminescence chip of the forward and reverse parallel connection of said two and peripheral.
Luminescent device the most according to claim 1, it is characterised in that also include:
First insulation filler (8), is folded in described upper transparent conductive film (1) and described lower
Between bright conductive film (2), it is filled between the plurality of luminescence unit (3) and peripheral.
5. according to described luminescent device arbitrary in Claims 1-4, it is characterised in that: institute
The upper transparent conductive film (1) stated and described lower transparent conductive film (2) are flexible and transparent conductive
Thin film, forms by being deposited with transparent conductive material on flexible transparent film.
Luminescent device the most according to claim 5, it is characterised in that: described flexible and transparent
Thin film be the one in PET, Merlon, polymethyl methacrylate or its
Meaning combination.
Luminescent device the most according to claim 5, it is characterised in that: described electrically conducting transparent
Material be indium tin metal oxide, zinc oxide aluminum, copper, Graphene, CNT, nano-Ag particles,
One in nano silver wire, polymeric membrane, composite transparent conductive film or its combination in any.
Luminescent device the most according to claim 3, it is characterised in that: described second insulation
Implant (10) selects PDMS, resin, electro-insulating rubber, Y2O3、Si3N4、Al2O3、BaTiO3、
MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2In one or its combination in any.
Luminescent device the most according to claim 4, it is characterised in that: described first insulation
Implant (8) selects PDMS, resin, electro-insulating rubber, Y2O3、Si3N4、Al2O3、BaTiO3、
MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2In one or its combination in any.
10. the preparation method of a luminescent device, it is characterised in that including:
Step S301: transparent conductive film (1) and lower transparent conductive film (2) in preparation；
Step S302: prepare multiple luminescence unit (3), described luminescence unit (3) is just including two
The LED chip of reverse parallel connection；
Step S303: multiple luminescence units (3) are arranged in the evaporation of lower transparent conductive film (2)
Have on the face of transparent conductive material；
Step S305: transparent conductive film (1) in attaching so that the steaming of upper nesa coating (1)
The face being coated with transparent conductive material is attached on the upper electrode of luminescence unit (3), is formed flexible luminous
Membrane structure.
11. preparation methoies according to claim 10, it is characterised in that: in step 303 and step
Also include between rapid 305:
Step S304: go up between luminescence unit (3) and peripheral filling at lower transparent conductive film (2)
First insulation filler (8), exposes the upper electrode of luminescence unit (3).
12. according to the preparation method described in claim 10 or 11, it is characterised in that: step S302
Including:
Step S302a: the non-exiting surface at electrically-conductive backing plate (5) forms one layer of reflective metal layer (6)；
Step S302b: multiple in the upper division of the electrically-conductive backing plate (5) being formed with reflective metal layer (6)
Unit, the LED luminescence chip of integrated two forward and reverse parallel connections in each unit；
Step S302c: the upper evaporation of the electrically-conductive backing plate (5) being formed with LED luminescence chip one layer thoroughly
Prescribed electrode layer (7)；
Step S302d: board structure step S302c obtained, by unit cutting, forms multiple
Light unit (3).
13. preparation methoies according to claim 12, it is characterised in that: step S302b is also wrapped
Include:
Between LED luminescence chip and peripheral fill the second insulation filler (10).
14. 1 kinds of light-emitting devices, it is characterised in that: including:
Alternating current power supply (9)；And
Arbitrary described luminescent device in claim 1 to 9；
Wherein, the two ends lead-in wire of described alternating current power supply (9) upper with described luminescent device respectively
Transparent conductive film (1), lower transparent conductive film (2) electrically connect, for driving with exchange way
Multiple luminescence units (3) of described luminescent device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610467039.3A CN105870114B (en) | 2016-06-24 | 2016-06-24 | Luminescent device and preparation method thereof, light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610467039.3A CN105870114B (en) | 2016-06-24 | 2016-06-24 | Luminescent device and preparation method thereof, light-emitting device |
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| CN105870114A true CN105870114A (en) | 2016-08-17 |
| CN105870114B CN105870114B (en) | 2018-11-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109819152A (en) * | 2019-02-27 | 2019-05-28 | 维沃移动通信有限公司 | Focusing camera mould group and terminal device |
| CN110996446A (en) * | 2020-01-03 | 2020-04-10 | 中国计量大学 | Alternating current driven LED device and light emitting method thereof under alternating current power supply |
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| CN102800800A (en) * | 2012-08-28 | 2012-11-28 | 安徽三安光电有限公司 | Light-emitting diode device and production method thereof |
| CN202889695U (en) * | 2012-04-16 | 2013-04-17 | 刘晓博 | High-frequency AC LED lamp for illumination |
| CN106465492A (en) * | 2014-06-20 | 2017-02-22 | 格罗特工业有限公司 | Egress and/or flicker-free lighting device with persistent luminescence |
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| CN2849463Y (en) * | 2004-12-27 | 2006-12-20 | 浙江天台天宇灯饰有限公司 | Monomer bipolar bicolour LED lamp bulb |
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| CN110996446A (en) * | 2020-01-03 | 2020-04-10 | 中国计量大学 | Alternating current driven LED device and light emitting method thereof under alternating current power supply |
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| Publication number | Publication date |
|---|---|
| CN105870114B (en) | 2018-11-02 |
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