CN102800800A - Light-emitting diode device and production method thereof - Google Patents
Light-emitting diode device and production method thereof Download PDFInfo
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- CN102800800A CN102800800A CN2012103088443A CN201210308844A CN102800800A CN 102800800 A CN102800800 A CN 102800800A CN 2012103088443 A CN2012103088443 A CN 2012103088443A CN 201210308844 A CN201210308844 A CN 201210308844A CN 102800800 A CN102800800 A CN 102800800A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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Abstract
The invention discloses a light-emitting diode device and a production method thereof. The production method comprises the following steps of: arranging a first conducting substrate and a second light-transmitting conducting structure respectively on the bottom surface and the top surface of a light-emitting epitaxial structure which at least comprises two light-emitting epitaxial units, so as to form light-emitting diodes arrayed with a high density, without a positive metal electrode and a negative metal electrode, and capable of increasing light emission, wherein the light rays emitted by a light-emitting layer can be effectively taken out, the light absorption phenomena of the metal electrodes can be reduced, the light-emitting efficiency can be increased, heat resistance can be reduced, the service lives of the light-emitting diodes can be prolonged, packaging materials can be saved, and technological processes can be simplified.
Description
Technical field
The present invention relates to a kind of LED device and preparation method thereof, especially relate to a kind of LED device that does not have metal electrode and preparation method thereof.
Background technology
Light-emitting diode (LED; Light Emitting Diode) owing to has long, advantage such as power consumption is low of life-span; Be applied to various fields; Especially along with its illumination performance index day by day significantly promotes, the application of LED more and more widely for example is used for optical display, traffic sign, data memory device, communicator and lighting device etc.
Generally speaking, existing light emitting diode construction, a as shown in Figure 1; Mainly be provided with the pedestal A of a tool groove A1, be combined with a chip B in this groove A1, this chip B links through a tie line C and another support D again; Last again by the injection mo(u)lding of a photic zone E; Pedestal A, chip B, tie line C and another support D are combined as a whole, accomplish the making of light-emitting diode, step is comparatively numerous and diverse.
Yet; During above-mentioned traditional light-emitting diode energized, because chip is incorporated in the recessed cup of pedestal, the light that launch this chip periphery and bottom surface is all stopped, reflects by recessed cup; So this chip only sends forward light, can't see the light that it sends in the dorsal part of this light-emitting diode.Also have at present by surface mount technology (Surface Mount; SMT) directly chip is electrically connected on the printed circuit board (PCB); As day disclosure special permission communique spy open flat 5-327026, the spy opens 2000-223752, like Fig. 2 a, shown in 3, after this circuit board energising; Though it is luminous that this chip can reach five (front, back, left, right, up), its bottom surface still can't be luminous.
In addition, existing high brightness White LED is to be mixed by each coloured light.As utilize red, green, blue three color chips combination back to mix the formation white light through optical lens, or adopt purple light or ultraviolet excitation RGB (RGB) fluorescent material to obtain white light, or adopt blue-light excited yellow fluorescent powder to obtain white light.It is maximum wherein to adopt blue-ray LED to add YAG yellow fluorescent powder generation white applications; Shortcoming is if the coating dosage control of yellow fluorescent powder is inaccurate in encapsulation process, perhaps can not carry out the conformal coating according to the shape of chip and the blue partially or yellow partially phenomenon of emergent light then can occur.Because epoxy resin or silica gel flowability are very strong, the encapsulation glue that is mixed with fluorescent material during coating can not and form uniform coat all around on the surface of chip, thereby makes the white light LEDs quality be difficult to guarantee.In order to overcome this defective, people propose to be solidified into film to the glue that is mixed with fluorescent material earlier, stick on the luminescence chip then.But the side that can not guarantee chip equally applies fluorescent material equably.In addition, along with the continuous rising (the blue chip junction temperature can reach 300 ℃ in theory) of junction temperature of chip, but owing to glue is difficult to withstand high temperatures, meeting contact generation heat and take place to go bad with luminescence chip, and above-mentioned encapsulation scheme is difficult to meet the demands.
Summary of the invention
Main purpose of the present invention provides a kind of LED device and preparation method thereof; It is provided with first electrically-conductive backing plate and the second light transmission conductive structure respectively through bottom surface and the end face at the epitaxial light emission structure that comprises two luminous extension unit at least; The light-emitting diode of the increase bright dipping of the no positive and negative metal electrode that the formation high density is arranged can take out the light that luminescent layer sends effectively, reduces the extinction phenomenon of metal electrode; Increase light extraction efficiency; Reduce thermal resistance, prolong the useful life of light-emitting diode, and save encapsulating material and simplify technological process.
The present invention mainly comprises following manufacturing process steps:
1) a growth substrate is provided, the whole luminous epitaxial loayer of growing above that, luminous epitaxial loayer comprises first semiconductor layer, luminescent layer, second semiconductor layer from bottom to up successively;
2) the luminous epitaxial loayer of said integral body is separated into several spaced luminous extension unit;
3) on said several spaced luminous extension unit, form second electrically-conductive backing plate, be used to connect positive source;
4) remove said growth substrate, expose first semiconductor layer of spaced luminous extension unit;
5) on first semiconductor layer of said spaced luminous extension unit, form the first light transmission conductive substrate structure, be used to connect power cathode.
Described LED device comprises:
Epitaxial light emission structure, it comprises two luminous extension unit at least, each luminous extension unit comprises first semiconductor layer, luminescent layer and second semiconductor layer;
First electrically-conductive backing plate is formed on said first semiconductor layer, is used to connect power cathode;
The second light transmission electrically-conductive backing plate is formed on said second semiconductor layer, is used to connect positive source.
Further, said growth substrate material can be selected from sapphire (Al
2O
3), a kind of or its combination in the carborundum (SiC), silicon (Si), gallium nitride (GaN), gallium phosphide (GaP).
Further, said first electrically-conductive backing plate is a light-transmitting substrate, thereby forms the light-emitting diode of comprehensive bright dipping.
Further, said first electrically-conductive backing plate is made up of transparency carrier and transparency conducting layer.
Further, said first electrically-conductive backing plate is the reflectivity substrate.
Further, said first electrically-conductive backing plate is made up of heat-radiating substrate and reflector.
Further, the said second light transmission electrically-conductive backing plate is made up of transparency carrier and transparency conducting layer.
Further, said transparency carrier is selected from clear glass, transparent flexible plastics or nano ceramics.
Further, said electrically conducting transparent layer material is optional with a kind of or its combination in tin indium oxide (ITO) or zinc oxide (ZnO) or In doping ZnO or Al doping ZnO or the Ga doping ZnO.
Further, said first electrically-conductive backing plate contains fluorescent material.
Further, the said second light transmission electrically-conductive backing plate contains fluorescent material.
Further, said reflector can be selected distributed Bragg reflecting layer or metallic reflector or comprehensive reflector for use.
Further, said heat-radiating substrate material can be selected a kind of or its combination in silicon (Si) substrate or copper (Cu) substrate or aluminium (Al) substrate for use.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the generalized section of existing light-emitting diode.
Fig. 2 is the generalized section of japanese kokai publication hei 5-327026 light-emitting diode.
Fig. 3 is the generalized section of TOHKEMY 2000-223752 light-emitting diode.
Fig. 4 ~ 10th, the generalized section that the embodiment of the invention 1 is made LED device.
Figure 11 ~ 17th, the generalized section that the embodiment of the invention 2 is made LED device.
Figure 18 is the generalized section that the embodiment of the invention 3 is made LED device.
Parts symbol description among the figure:
100: growth substrate; 101: the first semiconductor layers; 102: luminescent layer; 103: the second semiconductor layers; 104,106: transparency conducting layer; 105,107: clear glass; 108: positive source; 109: power cathode; 200: growth substrate; 201: the first semiconductor layers; 202: luminescent layer; 203: the second semiconductor layers; 204: transparency conducting layer; 205: clear glass; 206: the reflector; 207: heat-radiating substrate; 208: fluorescent material; 209: positive source; 210: power cathode; 300: growth substrate; 301: the first semiconductor layers; 302: luminescent layer; 303: the second semiconductor layers; 304,306: transparency conducting layer; 305: clear glass; 307: the transparent flexible plastics; 308,309: fluorescent material; 310: positive source; 311: power cathode.
Embodiment
Below will combine accompanying drawing and embodiment to specify execution mode of the present invention, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can make much of and implement according to this.
Embodiment 1
A kind of LED device shown in figure 10 comprises: 3 spaced LED epitaxial loayers, and wherein epitaxial loayer comprises first semiconductor layer 101, luminescent layer 102 and second semiconductor layer 103; The first transparent conducting glass structure by clear glass 107 and transparency conducting layer 106 are formed is formed on said first semiconductor layer 101, is used to connect power cathode 109; The second transparent conducting glass structure by clear glass 105 and transparency conducting layer 104 are formed is formed on said second semiconductor layer 103, is used to connect positive source 108.
Specifically, above-mentioned LED device comprises; 3 spaced LED epitaxial loayers, wherein epitaxial loayer comprises N-GaN layer 101, luminescent layer 102 and P-GaN layer 103; The first transparent conducting glass structure by clear glass 107 and transparent ITO conductive layer 106 are formed is formed on the said N-GaN layer 101, is used to connect power cathode 109; The second transparent conducting glass structure by clear glass 105 and transparent ITO conductive layer 104 are formed is formed on the said P-GaN layer 103, is used to connect positive source 108.
Said light-emitting diode is used for the first transparent conducting glass structure being linked to each other with power cathode 109 when luminous, and the second transparent conducting glass structure is linked to each other with positive source 108, and the luminescent layer 102 in the light-emitting diode is luminous under the function of current.The light that spontaneous photosphere 102 sends can be gone out through the said first transparent conducting glass structure and the second transparent conducting glass body structure surface in transmission; Can also be from each side outgoing of LED epitaxial loayer; And then realize bright dipping in all directions; Improve the external quantum efficiency of light-emitting diode, improved the photoelectric properties of light-emitting diode.
Fig. 4 ~ 10 figure disclose the manufacture method of the light-emitting diode of above-mentioned comprehensive bright dipping, may further comprise the steps:
As shown in Figure 4, at first, a growth substrate 100 is provided, said substrate 100 is formed by sapphire, and in the present embodiment, said substrate 100 is in order to formation gallium nitride base blue light diode.
As shown in Figure 5, the whole epitaxial loayer of a long LED on sapphire substrate 100, epitaxial loayer is followed successively by N-GaN layer 101, luminescent layer 102, P-GaN layer 103 from bottom to up.
As shown in Figure 6, adopt the ICP etch process, the whole epitaxial loayer of LED is separated into the epitaxial loayer of 3 unique spacer arrangements.
As shown in Figure 7; Adopt bonding technology; On the epitaxial loayer that above-mentioned 3 unique spacer are arranged, form the second transparent conducting glass structure; Promptly the second transparent conducting glass structure is formed on the P-GaN layer 103; So just originally transferring on the second transparent conducting glass structure at the epitaxial loayer on the sapphire substrate 100, the second transparent conducting glass structure plays and supports and the fixedly effect of the epitaxial loayer of unique spacer arrangement, and wherein the second transparent conducting glass structure is made up of clear glass 107 and transparent ITO conductive layer 106.
As shown in Figure 8, through laser lift-off, remove above-mentioned sapphire substrate 100, expose the N-GaN layer 101 of spaced epitaxial loayer.
As shown in Figure 9; Adopt bonding technology; On the N-GaN of said spaced epitaxial loayer layer 101, form the first transparent conducting glass structure, constitute light emitting diode construction, wherein the first transparent conducting glass structure is made up of clear glass 107 and transparent ITO conductive layer 106.
Shown in figure 10, positive source 108 connects the said second transparent conducting glass structure, and power cathode 109 connects the said first transparent conducting glass structure, can form conducting structure, makes said light emitting diode construction operate as normal.
In sum; Present embodiment discloses a kind of LED device and preparation method thereof; It is provided with the first transparent conducting glass structure and the second transparent conducting glass structure respectively through bottom surface and the end face at the epitaxial light emission structure that comprises two luminous extension unit at least; Light can be from first semiconductor layer and second semiconductor layer of end face and each side outgoing of LED epitaxial loayer of bottom surface when luminescent layer sends, and then is lifted out optical efficiency, and the light of its luminescent layer of light-emitting diode of traditional mode can be reflected when passing first semiconductor layer to the elargol of bottom; And then through first semiconductor layer; Can cause optical loss, most of light is prone at tube core inner through repeatedly reflecting and being absorbed, and is prone to take place total reflection and causes too much light loss.In addition, present embodiment forms the LED device of no positive and negative metal electrode, can reduce the extinction phenomenon of metal electrode, effectively increases light extraction efficiency; Need not make technical processs such as metal electrode, routing, encapsulating, thereby can simplify technological process, save cost, enhance productivity.
Embodiment 2
A kind of LED device shown in figure 17 comprises: 3 spaced LED epitaxial loayers, and wherein epitaxial loayer comprises first semiconductor layer 201, luminescent layer 202 and second semiconductor layer 203; First board structure by reflector 206 and heat-radiating substrate 207 are formed is formed on said first semiconductor layer 201, is used to connect power cathode 210; Second board structure that contains fluorescent material by clear glass 205 and transparency conducting layer 204 are formed is formed on said second semiconductor layer 203, is used to connect positive source 209.
Specifically, above-mentioned LED device comprises; 3 spaced LED epitaxial loayers, wherein epitaxial loayer comprises N-GaN layer 201, luminescent layer 202 and P-GaN layer 203; The first reflection structure of heat dissipation substrate that does not contain fluorescent material by comprehensive reflector 206 and Si heat-radiating substrate 207 are formed is formed on the said N-GaN layer 201, is used to connect power cathode 210; Second board structure is the transparent conductive substrate structure that contains fluorescent material 208, is formed on the said P-GaN layer 203, is used to connect positive source 209, and wherein the transparent conductive substrate structure is made up of clear glass 205 and transparent ITO conductive layer 204.
Said light-emitting diode is used for first board structure that does not contain fluorescent material being linked to each other with power cathode 210 when luminous, and second board structure that will contain fluorescent material links to each other with positive source 209, and the luminescent layer 202 in the light-emitting diode is luminous under the function of current.The light that spontaneous photosphere 202 sends directly sees through second board structure that contains fluorescent material of end face, through fluorescent material excite the acquisition white light, thereby avoid the extinction phenomenon of metal electrode, effectively be lifted out optical efficiency, improve the photoelectric properties of light-emitting diode.Secondly, the LED epitaxial loayer does not directly contact with fluorescent material, avoids reducing thermal resistance because heat radiation possibly produce failure phenomenon, prolongs the useful life of light-emitting diode; Moreover the LED device that the present invention makes need not made technical processs such as metal electrode, routing, thereby can simplify technological process, saves cost, enhances productivity.
Figure 11 ~ 17 disclose the manufacture method of aforementioned light-emitting diode, may further comprise the steps:
Shown in figure 11, at first, a growth substrate 200 is provided, said substrate 200 is formed by carborundum, and in the present embodiment, said substrate 200 is in order to formation gallium nitride base blue light diode.
Shown in figure 12, the whole epitaxial loayer of a brilliant LED of heap of stone on silicon carbide substrate 200, epitaxial loayer is followed successively by N-GaN layer 201, luminescent layer 202, P-GaN layer 203 from bottom to up.
Shown in figure 13, adopt the ICP etch process, the whole epitaxial loayer of LED is separated into the epitaxial loayer of 3 unique spacer arrangements.
Shown in figure 14; Adopt bonding technology; On the epitaxial loayer that above-mentioned 3 unique spacer are arranged, form the second transparent conductive substrate structure that contains fluorescent material; The second transparent conductive substrate structure that promptly contains fluorescent material is formed on the P-GaN layer 203; So just originally transferring on the second transparent conductive substrate structure that contains fluorescent material at the epitaxial loayer on the silicon carbide substrate 200, the said second transparent conductive substrate structure that contains fluorescent material plays and supports and the fixedly effect of the epitaxial loayer of unique spacer arrangement, and wherein the second transparent conductive substrate structure is made up of clear glass 205 and transparent ITO conductive layer 204.
Shown in figure 15, through laser lift-off, remove above-mentioned silicon carbide substrate 200, expose the N-GaN layer 201 of spaced epitaxial loayer.
Shown in figure 16; Adopt bonding technology; On the N-GaN of said spaced epitaxial loayer layer 201, form the first reflection structure of heat dissipation substrate that does not contain fluorescent material; Constitute light emitting diode construction, the first reflection structure of heat dissipation substrate that does not wherein contain fluorescent material is made up of with Si heat-radiating substrate 207 comprehensive reflector 206.
Shown in figure 17, positive source 209 connects said second board structure that contains fluorescent material, and power cathode 210 connects said first board structure that does not contain fluorescent material, can form conducting structure, makes said light emitting diode construction operate as normal.
Embodiment 3
Shown in figure 18, what LED device and embodiment 1 were different is that the number of LED epitaxial loayer is 5, can form high density and arrange; First board structure is made up of the transparent conductive substrate structure that contains fluorescent material, and wherein the transparent conductive substrate structure is made up of transparent flexible plastics 307 and transparent ITO conductive layer 306.
The manufacture method of above-mentioned LED device and embodiment 2 differences are:
In order more effectively to promote light conversion efficiency, first substrate is the transparent conductive substrate structure that contains fluorescent material, can form sandwich with LED epitaxial loayer, second board structure that contains fluorescent material like this; Constitute the white light-emitting diode that comprehensive no positive and negative metal electrode blocks, more effectively take out the light that luminescent layer sends, reduce the extinction phenomenon of metal electrode; Increase light extraction efficiency, and need not make technical processs such as metal electrode, routing, can save encapsulating material; Simplify technological process, enhance productivity, in addition; The LED epitaxial loayer does not directly contact with fluorescent material; Avoid reducing thermal resistance, prolong the useful life of light-emitting diode because heat radiation possibly produce failure phenomenon.
Claims (12)
1. LED device comprises:
Epitaxial light emission structure, it comprises two luminous extension unit at least, each luminous extension unit comprises first semiconductor layer, luminescent layer and second semiconductor layer;
First electrically-conductive backing plate is formed on said first semiconductor layer, is used to connect power cathode;
The second light transmission electrically-conductive backing plate is formed on said second semiconductor layer, is used to connect positive source.
2. LED device according to claim 1 is characterized in that: said first electrically-conductive backing plate is a light-transmitting substrate, thereby forms the light-emitting diode of comprehensive bright dipping.
3. LED device according to claim 2 is characterized in that: said first electrically-conductive backing plate is made up of transparency carrier and transparency conducting layer.
4. LED device according to claim 1 is characterized in that: said first electrically-conductive backing plate is the reflectivity substrate.
5. LED device according to claim 4 is characterized in that: said first electrically-conductive backing plate is made up of heat-radiating substrate and reflector.
6. LED device according to claim 1 is characterized in that: the said second light transmission electrically-conductive backing plate is made up of transparency carrier and transparency conducting layer.
7. according to claim 3 or 6 described LED devices, it is characterized in that: said transparency carrier is selected from clear glass, transparent flexible plastics or nano ceramics.
8. according to claim 3 or 6 described LED devices, it is characterized in that: the material of said transparency conducting layer is selected from a kind of or its combination in tin indium oxide, zinc oxide, indium doping zinc-oxide, aluminium-doped zinc oxide, the Ga-doped zinc oxide.
9. according to claim 2 or 3 described LED devices, it is characterized in that: said first electrically-conductive backing plate contains fluorescent material.
10. LED device according to claim 1 is characterized in that: the said second light transmission electrically-conductive backing plate contains fluorescent material.
11. the manufacture method of LED device, it comprises step:
1) a growth substrate is provided, the whole luminous epitaxial loayer of growing above that, luminous epitaxial loayer comprises first semiconductor layer, luminescent layer, second semiconductor layer from bottom to up successively;
2) the luminous epitaxial loayer of said integral body is separated into several spaced luminous extension unit;
3) on said several spaced luminous extension unit, form second electrically-conductive backing plate, be used to connect positive source;
4) remove said growth substrate, expose first semiconductor layer of spaced luminous extension unit;
5) on first semiconductor layer of said spaced luminous extension unit, form the first light transmission conductive substrate structure, be used to connect power cathode.
12. the manufacture method of LED device according to claim 11 is characterized in that: said growth substrate material is selected from a kind of or its combination in sapphire, carborundum, silicon, gallium nitride, the gallium phosphide.
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|---|---|---|---|
| CN2012103088443A CN102800800A (en) | 2012-08-28 | 2012-08-28 | Light-emitting diode device and production method thereof |
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| CN2012103088443A CN102800800A (en) | 2012-08-28 | 2012-08-28 | Light-emitting diode device and production method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742452A (en) * | 2016-05-16 | 2016-07-06 | 漳州立达信光电子科技有限公司 | LED chip of vertical structure, LED surface light source and preparation method thereof |
| CN105870114A (en) * | 2016-06-24 | 2016-08-17 | 中国科学院半导体研究所 | Light emitting device, flexible light emitting device and preparation method thereof |
| CN106486508A (en) * | 2015-08-28 | 2017-03-08 | 展晶科技(深圳)有限公司 | Led element |
| CN109285935A (en) * | 2018-11-07 | 2019-01-29 | 东莞市亿晶源光电科技有限公司 | A kind of surface luminescent LED lamp pearl and lamp string |
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| CN106486508A (en) * | 2015-08-28 | 2017-03-08 | 展晶科技(深圳)有限公司 | Led element |
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| CN109285935A (en) * | 2018-11-07 | 2019-01-29 | 东莞市亿晶源光电科技有限公司 | A kind of surface luminescent LED lamp pearl and lamp string |
| CN111193180A (en) * | 2018-11-14 | 2020-05-22 | 罗伯特·博世有限公司 | Laser diode device |
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