CN105742452B - The LED chip of vertical structure, LED area light source and preparation method thereof - Google Patents
The LED chip of vertical structure, LED area light source and preparation method thereof Download PDFInfo
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- CN105742452B CN105742452B CN201610325786.3A CN201610325786A CN105742452B CN 105742452 B CN105742452 B CN 105742452B CN 201610325786 A CN201610325786 A CN 201610325786A CN 105742452 B CN105742452 B CN 105742452B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The present invention relates to a kind of LED area light sources, LED chip including at least one vertical structure, first electrode layer and the second electrode lay are respectively equipped on two opposite faces of the LED chip vertically, the first electrode layer is equipped with first electrode, the second electrode lay is equipped with second electrode, the first electrode is electrically connected with first electrode layer, the second electrode is electrically connected with the second electrode lay, it further include encapsulated layer, the encapsulated layer coats the LED chip, and the first electrode and second electrode are exposed respectively except the encapsulated layer.The invention further relates to a kind of preparation methods of LED area light source.LED area light source of the invention can avoid being in contact resistance between electrode and conductive layer, and then avoid the generation of fever phenomenon；In addition, the preparation method of LED area light source of the invention has the advantages that preparation process is simply and high-efficient.
Description
Technical field
The present invention relates to LED technology, in particular to a kind of LED chip of vertical structure, LED area light source and its preparation side
Method.
Background technique
Flexible surface light source can be attached at the surface of arbitrary shaped body, so as to will illuminate with building wall, furniture and
The interior such as ornament object phase surface, realizes the illuminating effect of " light-exposed to lose lamp " " illumination is combined with art ", is consumer
More good lighting experience is provided.
LED technology passes through the development of many years, and technology is more and more mature, while cost has also been greatly lowered, Ke Yichong
Its cost and the advantage of scale are waved in distribution, and cost of implementation is rationally and the LED flexible surface light source illuminating product of stay in grade.
There are many preparation methods of flexible LED area source in the prior art.For example, United States Patent (USP) US8674593B2 is public
The preparation method and flexible LED area source of a kind of flexible LED area source are opened.And it specifically discloses light emitting diode (LED) chip with vertical structure
It is mixed into solvent, forms Ink；Then Ink is printed to the substrate for having route；Element manufacturing successively print anode layer, Ink and
Negative electrode layer.In the preparation method of above-mentioned LED area light source, chip is not fixed, in Ink towards random distribution, work as core
Piece print in the devices when, the P electrode of chip is upward or be random distribution downward, i.e., uncertain.And when being powered,
The chip that only P electrode is contacted with anode layer, which can be connected, to be lighted, and the chip being oppositely directed to can not be connected.
Therefore, there are following major defects for the scheme of above-mentioned patent disclosure: (1) due to chip in the devices installation direction with
Machine distribution, from the point of view of statistical distribution probability, has 50% chip that can light, in addition 50% can not light, to cause chip
Significant wastage；(2) mode printed not can guarantee the close contact between conductive layer and chip electrode, will form big contact
Resistance causes device heating.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of LED chip of vertical structure, LED chip can be convenient
P/N electrode layer and wiring board connection；It further provides for a kind of can avoid because forming contact resistance causing fever phenomenon
LED area light source, and the preparation method of above-mentioned LED area light source is provided.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of LED chip of vertical structure is respectively equipped with first on two opposite faces of the LED chip vertically
Electrode layer and the second electrode lay, the first electrode layer are equipped with first electrode, and the second electrode lay is equipped with second electrode,
The first electrode is electrically connected with first electrode layer, and the second electrode is electrically connected with the second electrode lay.
A kind of LED area light source, the LED chip including above-mentioned vertical structure further include conductive layer, the conductive layer difference
The two sides of the LED chip vertically are set to, the first electrode exposes part and except the encapsulated layer
Two electrodes expose the part except the encapsulated layer respectively with the conductive layer contact.
A kind of preparation method of LED area light source, first by the P electrode and N electrode of the LED chip of the vertical structure of at least one
It is upper to make projected electrode respectively, it then carries out cutting and forms one single chip, the one single chip is encapsulated in encapsulating material, so
The encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out afterwards it is thinned, until expose described in
Projected electrode, then the substrate with conductive material is pressed on along one single chip vertical direction to the two sides of encapsulating material respectively
On, contact conductive material with the projected electrode.
The beneficial effects of the present invention are:
(1) LED chip of vertical structure of the invention is electrically connected setting in first electrode layer and the second electrode lay
First electrode and second electrode, by first electrode and second electrode, to realize wiring board and first electrode layer, the second electrode lay
Connection；
(2) LED area light source of the invention can be pre- by the arrangement of the LED chip of vertical structure by the design of encapsulated layer
It first fixes, on the one hand, LED chip can be arranged according to demand with identical direction, avoid the problem that chip wastes；Another party
Face, first electrode and second electrode are exposed respectively except the encapsulated layer, and the part that first electrode and second electrode are exposed can be with
It is directly contacted with conductive layer, to provide structure basis with the close contact of conductive layer；
(3) preparation method of LED area light source of the invention first passes through encapsulating material and encapsulates one single chip, makes list
The arrangement of a chip is fixed in advance, is realized projected electrode and conductive material and is in close contact, keeps away
Exempt to be in contact resistance between first electrode, second electrode and conductive layer, and then avoids the generation of fever phenomenon；In addition, this hair
Bright preparation method has the advantages that process is simply and high-efficient, and the LED area light source of acquisition has stay in grade and cost reasonable
The advantages of.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the LED chip of the vertical structure of the embodiment of the present invention one；
Fig. 2 is the structural schematic diagram of the LED area light source of the embodiment of the present invention two；
Fig. 3 is the structural schematic diagram of the LED area light source of the embodiment of the present invention three；
Fig. 4 is the structural schematic diagram of the LED area light source of the embodiment of the present invention four.
Label declaration:
1, LED chip；11, first electrode；12, second electrode；2, encapsulated layer；3, conductive layer；4, base；41, light turns
Change particle；42, reflective layer.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: by being electrically connected setting in first electrode layer and the second electrode lay
One electrode and second electrode, to facilitate the connection of wiring board Yu first electrode layer, the second electrode lay.
Please refer to Fig. 1, a kind of LED chip of vertical structure, on two opposite faces of the LED chip 1 vertically
It is respectively equipped with first electrode layer and the second electrode lay, the first electrode layer is equipped with first electrode 11, the second electrode lay
It is equipped with second electrode 12, the first electrode 11 is electrically connected with first electrode layer, the second electrode 12 and the second electrode lay
Electrical connection.
A kind of LED area light source, the LED chip 1 including above-mentioned vertical structure further include conductive layer 3, the conductive layer 3
The two sides of the LED chip 1 vertically are respectively arranged at, the first electrode 11 is exposed except the encapsulated layer 2
Part and second electrode 12 are exposed the part except the encapsulated layer 2 and are contacted respectively with the conductive layer 3.
A kind of preparation method of LED area light source, first by the P electrode and N electrode of the LED chip of the vertical structure of at least one
It is upper to make projected electrode respectively, it then carries out cutting and forms one single chip, the one single chip is encapsulated in encapsulating material, so
The encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out afterwards it is thinned, until expose described in
Projected electrode, then the substrate with conductive material is pressed on along one single chip vertical direction to the two sides of encapsulating material respectively
On, contact conductive material with the projected electrode.
As can be seen from the above description, the beneficial effects of the present invention are:
(1) LED chip of vertical structure of the invention is electrically connected setting in first electrode layer and the second electrode lay
First electrode and second electrode, by first electrode and second electrode, to realize wiring board and first electrode layer, the second electrode lay
Connection；
(2) LED area light source of the invention can be pre- by the arrangement of the LED chip of vertical structure by the design of encapsulated layer
It first fixes, on the one hand, LED chip can be arranged according to demand with identical direction, avoid the problem that chip wastes；Another party
Face, first electrode and second electrode are exposed respectively except the encapsulated layer, and the part that first electrode and second electrode are exposed can be with
It is directly contacted with conductive layer, to provide structure basis with the close contact of conductive layer；
(3) preparation method of LED area light source of the invention first passes through encapsulating material and encapsulates one single chip, makes list
The arrangement of a chip is fixed in advance, is realized projected electrode and conductive material and is in close contact, keeps away
Exempt to be in contact resistance between first electrode, second electrode and conductive layer, and then avoids the generation of fever phenomenon；In addition, this hair
Bright preparation method has the advantages that process is simply and high-efficient, and the LED area light source of acquisition has stay in grade and cost reasonable
The advantages of.
In the LED chip of vertical structure of the invention:
Further, the first electrode 11 and second electrode 12 are arranged along the vertical direction of the LED chip 1 respectively.
Seen from the above description, as a specific structure example, first electrode and second electrode are along the LED chip
Vertical direction be arranged on the two relative side of LED chip.
It further, further include encapsulated layer 2, the encapsulated layer 2 coats the first electrode layer and the second electrode lay, described
At least part of first electrode 11 and second electrode 12 is exposed respectively except the encapsulated layer.
Further, the respectively projected electrode of the first electrode 11 and second electrode 12,11 He of first electrode
The top position of the protrusion of second electrode 12 exposes respectively except the encapsulated layer 2.
For example, the first electrode 11 is exposed except the encapsulated layer 2 by one end far from first electrode layer, described second
Electrode 12 is exposed except the encapsulated layer 2 by one end far from the second electrode lay.For another example the first electrode 11 and the second electricity
Pole 12 is completely exposed respectively except the encapsulated layer 2.
Seen from the above description, expose respectively as first electrode and second electrode several specific except the encapsulated layer
In example, it can be design first electrode and expose except the encapsulated layer since one end far from first electrode layer, the second electricity
Expose except the encapsulated layer since one end far from the second electrode lay pole；It is also possible to first electrode and second electrode is complete
Expose except the encapsulated layer, can also partially expose except the encapsulated layer；First electrode and second electrode can be existing
There is the projected electrode in technology, the top position of their protrusion exposes except the encapsulated layer, the shape of above-mentioned projected electrode
It can be arbitrary shape, such as hemispherical etc..First electrode and second electrode of the invention exposes the knot except the encapsulated layer
Structure design, can also be using other specific designs except above-mentioned several specific examples, as long as making first electrode and second electrode
Expose except the encapsulated layer, reserving can be with the contact position of conductive layer contact.
In the LED chip of vertical structure of the invention:
When the number of the LED chip of vertical structure is multiple, it is spaced setting between multiple LED chips, as specific
Example, can be array distribution between multiple LED chips, or be evenly spaced on.
The material of encapsulated layer can choose all encapsulating materials for being suitable for LED chip encapsulating in principle, and encapsulated layer is
Bright material, to realize light transmission；Encapsulated layer specifically can choose the transparent polymer material of silica gel, epoxy resin or PMMA etc..
In LED area light source of the invention:
Further, the conductive layer 3 is made of transparent conductive polymer, and the first electrode 11 and second electrode 12 are logical
Pressing is crossed to be electrically connected with the conductive layer 3.
Seen from the above description, conductive layer and first electrode expose the part except the encapsulated layer and second electrode exposing
Part except the encapsulated layer is in close contact, and avoids being in contact resistance between first electrode, second electrode and conductive layer, into
And avoid the generation of fever phenomenon.The material of conductive layer can choose the material of all conductive matter, conductive layer in principle
For transparent material, to realize light transmission；For example, transparent conducting polymer.Pressure can be passed through between conductive layer and two electrodes
The mode of conjunction realizes the connection of electrode and conductive layer.
It further, further include base 4, the base 4 is set to one side of the conductive layer 3 far from the LED chip 1.Institute
It states and is equipped with light conversion particles 41 in base 4, the material of the light conversion particles 41 is fluorescent material.
Seen from the above description, base can be common board structure, preferably flexible base board, and material can be selected
Transparent plastic material.
It is equipped with light conversion particles in base, when the light that LED chip issues passes through light conversion particles, can incite somebody to action
Light is converted to longer wavelength light, blends white light.The material of light conversion particles is fluorescent material, such as fluorescent powder.
Further, one close to the base 4 of first electrode 11 and in the base 4 of second electrode 12 is reflective layer
42。
Seen from the above description, in above-mentioned two base, one is set as reflective layer, when the light that LED chip issues
When arrival is set as in the base of reflective layer, reflective layer reflects light, and is emitted via another base direction.It can be achieved
Single side goes out the technical effect of light.
In the preparation method of LED area light source of the invention:
Further, the one single chip is arranged on support carrier and carries out the encapsulating, after one single chip is thinned,
The support carrier is removed.
Further, described thinned using reactive ion etching, chemical reagent dissolution or cutting process progress.
Seen from the above description, one single chip can support carrier to can choose often by spacing arrangement on the support carrier
Then on the support carrier blue film is encapsulated one single chip, after the completion of encapsulating, then will support carrier removal, then
Carry out thinned, thinned concrete operations can using reactive ion etching (RIE), chemical reagent dissolution or cutting the methods of.Pressure
Closing operation can be carried out using pressing roller.
Please refer to Fig. 1, the embodiment of the present invention one are as follows:
A kind of LED chip of vertical structure of the present embodiment, the LED chip 1 including at least three vertical structures are described
First electrode layer and the second electrode lay, the first electrode layer are respectively equipped on two opposite faces of LED chip 1 vertically
It is equipped with first electrode 11, the second electrode lay is equipped with second electrode 12, the first electrode 11 and first electrode layer electricity
Connection, the second electrode 12 are electrically connected with the second electrode lay, the respectively protrusion of the first electrode 11 and second electrode 12
Electrode, and be arranged respectively along the vertical direction of the LED chip 1, it further include encapsulated layer 2, encapsulated layer 2 uses PMMA material.Institute
It states encapsulated layer 2 and coats the LED chip 1, the first electrode 11 and second electrode 12 are exposed respectively except the encapsulated layer 2.
The top position of the protrusion of the first electrode 11 and second electrode 12 exposes respectively except the encapsulated layer.
Referring to figure 2., the embodiment of the present invention two are as follows:
A kind of LED area light source of the present embodiment, the LED chip 1 including at least three vertical structures, 1 edge of LED chip
First electrode layer and the second electrode lay are respectively equipped on two opposite faces of vertical direction, the first electrode layer is equipped with first
Electrode 11, the second electrode lay are equipped with second electrode 12, and the first electrode 11 is electrically connected with first electrode layer, and described the
Two electrodes 12 are electrically connected with the second electrode lay, the respectively projected electrode of the first electrode 11 and second electrode 12, and respectively
Vertical direction along the LED chip 1 is arranged, and further includes encapsulated layer 2, conductive layer 3 and base 4, encapsulated layer 2, conductive layer 3 and base
Layer 4 is transparent material, and encapsulated layer 2 uses epoxide resin material, and conductive layer 3 is conducting polymer materials, and base 4 is plastics material
Material.The encapsulated layer 2 coats the LED chip 1, and the first electrode 11 and second electrode 12 expose the encapsulated layer 2 respectively
Except.The top position of the protrusion of the first electrode 11 and second electrode 12 exposes respectively except the encapsulated layer 2.It is described to lead
Electric layer 3 is respectively arranged at the two sides of the LED chip 1 vertically, the first electrode 11 expose the encapsulated layer 2 it
Outer part and second electrode 12 is exposed the part except the encapsulated layer 2 and is contacted respectively with the conductive layer 3.The base 4
It is set to one side of the conductive layer 3 far from the LED chip 1.The base 4 is flexible base board.
As shown in Fig. 2, arrow direction is the light direction of the LED area light source of the present embodiment in figure.
Referring to figure 3., the embodiment of the present invention three are as follows:
A kind of LED area light source of the present embodiment, the LED chip 1 including at least three vertical structures, 1 edge of LED chip
First electrode layer and the second electrode lay are respectively equipped on two opposite faces of vertical direction, the first electrode layer is equipped with first
Electrode 11, the second electrode lay are equipped with second electrode 12, and the first electrode 11 is electrically connected with first electrode layer, and described the
Two electrodes 12 are electrically connected with the second electrode lay, the respectively projected electrode of the first electrode 11 and second electrode 12, and respectively
Vertical direction along the LED chip 1 is arranged, and further includes encapsulated layer 2, conductive layer 3 and base 4, encapsulated layer 2, conductive layer 3 and base
Layer 4 is transparent material, and encapsulated layer 2 uses silica gel material, and conductive layer 3 is conducting polymer materials, and base 4 is plastic material.
The top position that the encapsulated layer 2 coats the protrusion of first electrode 11 described in the LED chip 1 and second electrode 12 exposes respectively
Except the encapsulated layer 2.The conductive layer 3 is respectively arranged at the two sides of the LED chip 1 vertically, and described first
Electrode 11 exposes part except the encapsulated layer 2 and second electrode 12 expose the part except the encapsulated layer 2 respectively with institute
State the contact of conductive layer 3.The base 4 is set to one side of the conductive layer 3 far from the LED chip 1.The base 4 is flexible base
Plate, flexible base board is interior to be equipped with light conversion particles 41, and the material of the light conversion particles 41 is fluorescent material.
As shown in figure 3, arrow direction is the light direction of the LED area light source of the present embodiment in figure.
Referring to figure 4., the embodiment of the present invention four are as follows:
A kind of LED area light source of the present embodiment, the LED chip 1 including at least three vertical structures, 1 edge of LED chip
First electrode layer and the second electrode lay are respectively equipped on two opposite faces of vertical direction, the first electrode layer is equipped with first
Electrode 11, the second electrode lay are equipped with second electrode 12, and the first electrode 11 is electrically connected with first electrode layer, and described the
Two electrodes 12 are electrically connected with the second electrode lay, the respectively projected electrode of the first electrode 11 and second electrode 12, and respectively
Vertical direction along the LED chip 1 is arranged, and further includes encapsulated layer 2, conductive layer 3 and base 4, encapsulated layer 2, conductive layer 3 and base
Layer 4 is transparent material, and encapsulated layer 2 uses silica gel material, and conductive layer 3 is conducting polymer materials, and base 4 is plastic material.
The top position that the encapsulated layer 2 coats the protrusion of first electrode 11 described in the LED chip 1 and second electrode 12 exposes respectively
Except the encapsulated layer 2.The conductive layer 3 is respectively arranged at the two sides of the LED chip 1 vertically, and described first
Electrode 11 exposes part except the encapsulated layer 2 and second electrode 12 expose the part except the encapsulated layer 2 respectively with institute
State the contact of conductive layer 3.The base 4 is set to one side of the conductive layer 3 far from the LED chip 1.The base 4 is flexible base
Plate, flexible base board is interior to be equipped with light conversion particles 41, and the material of the light conversion particles 41 is fluorescent material.Close to the second electricity
The base 4 of pole 12 is set as reflective layer 42.
As shown in figure 4, arrow direction is the light direction of the LED area light source of the present embodiment in figure.
The embodiment of the present invention five are as follows:
The preparation method of a kind of LED area light source of the present embodiment, on the epitaxial wafer of the LED chip of vertical structure, to whole
Projected electrode is made respectively in the P electrode and N electrode of all LED chips on a epitaxial wafer；It is then cut into one single chip.LED core
Pitch arrays arrangement of the piece on blue film on demand；LED chips all on blue film are encapsulated in transparent encapsulated layer, material is silicon
Glue.After removing blue film, encapsulated layer upper and lower surface is carried out using chemical reagent dissolution method it is thinned, to expose the protrusion of LED chip
Electrode.There are the flexible base board of transparent polymer conductive layer and the encapsulated layer of LED chip to press on surface using pressing roller,
Flexible base board is transparent plastic material, so that encapsulated layer, in centre, upper and lower surface is the flexibility with transparent polymer conductive layer
Substrate, transparent polymer conductive layer and projected electrode are in close contact.So far, the LED area light source of the present embodiment is obtained.
In conclusion LED area light source provided by the invention can avoid being in contact resistance between electrode and conductive layer, in turn
Avoid the generation of fever phenomenon；In addition, the preparation method of LED area light source of the invention has preparation process simply and high-efficient
Advantage.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (10)
1. a kind of LED chip of vertical structure, the first electricity is respectively equipped on two opposite faces of the LED chip vertically
Pole layer and the second electrode lay, which is characterized in that the first electrode layer is equipped with first electrode, and the second electrode lay is equipped with
Second electrode, the first electrode are electrically connected with first electrode layer, and the second electrode is electrically connected with the second electrode lay, and described
One electrode layer is the P electrode layer in LED chip, and the second electrode lay is the N electrode layer in LED chip；
It further include encapsulated layer, the encapsulated layer coats the first electrode layer and the second electrode lay, the first electrode and second
At least part of electrode is exposed respectively except the encapsulated layer.
2. the LED chip of vertical structure according to claim 1, which is characterized in that the first electrode and second electrode
It is arranged respectively along the vertical direction of the LED chip.
3. the LED chip of vertical structure according to claim 1, which is characterized in that the first electrode and second electrode
The top position of the protrusion of respectively projected electrode, the first electrode and second electrode exposes respectively except the encapsulated layer.
4. a kind of LED area light source, which is characterized in that the LED core including vertical structure described in any one of claims 1 to 3
Piece further includes conductive layer, and the conductive layer is respectively arranged at the two sides of the LED chip vertically, first electricity
Part except the encapsulated layer is exposed in pole and second electrode expose the part except the encapsulated layer respectively with the conductive layer
Contact.
5. LED area light source according to claim 4, which is characterized in that the conductive layer is made of transparent conductive polymer,
The first electrode and second electrode are electrically connected by pressing with the conductive layer.
6. LED area light source according to claim 4, which is characterized in that further include base, the base is set to conductive layer
One side far from the LED chip, light conversion particles are equipped in the base, and the material of the light conversion particles is fluorescence
Material.
7. LED area light source according to claim 4, which is characterized in that close to the base of first electrode and close to the second electricity
One in the base of pole is reflective layer.
8. a kind of preparation method of LED area light source, which is characterized in that first by the P electricity of the LED chip of the vertical structure of at least one
Projected electrode is made on pole and N electrode respectively, cutting is then carried out and forms one single chip, the one single chip is encapsulated in encapsulating
In material, then the encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out it is thinned, directly
It is pressed on encapsulating material respectively along one single chip vertical direction to exposing the projected electrode, then by the substrate with conductive material
Two sides on, contact conductive material with the projected electrode.
9. the preparation method of LED area light source according to claim 8, which is characterized in that the one single chip to be arranged in
The encapsulating is carried out on support carrier, after one single chip is thinned, the support carrier is removed.
10. the preparation method of LED area light source according to claim 8, which is characterized in that described thinned using reactive ion
Etching, chemical reagent dissolution or cutting process carry out.
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| CN110164853A (en) * | 2019-04-22 | 2019-08-23 | 中山市木林森电子有限公司 | A kind of curved surface LED light source |
| CN113130462B (en) * | 2021-04-13 | 2023-08-04 | 广州市鸿利显示电子有限公司 | Preparation method of display module and display module |
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| US9136442B2 (en) * | 2013-01-25 | 2015-09-15 | Tsmc Solid State Lighting Ltd. | Multi-vertical LED packaging structure |
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|---|---|---|---|---|
| CN102800800A (en) * | 2012-08-28 | 2012-11-28 | 安徽三安光电有限公司 | Light-emitting diode device and production method thereof |
| CN103594568A (en) * | 2013-10-24 | 2014-02-19 | 天津三安光电有限公司 | Semiconductor device and manufacturing method thereof |
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| CN105742452A (en) | 2016-07-06 |
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