CN109950380A - LED package - Google Patents
LED package Download PDFInfo
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- CN109950380A CN109950380A CN201711462993.4A CN201711462993A CN109950380A CN 109950380 A CN109950380 A CN 109950380A CN 201711462993 A CN201711462993 A CN 201711462993A CN 109950380 A CN109950380 A CN 109950380A
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- Prior art keywords
- layer
- light emitting
- emitting diode
- led package
- line layer
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- 238000006243 chemical reaction Methods 0.000 claims description 28
- 230000035515 penetration Effects 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003447 ipsilateral effect Effects 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 description 72
- 239000000463 material Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 210000004209 hair Anatomy 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 241000219000 Populus Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 229910001195 gallium oxide Inorganic materials 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention discloses a kind of LED package, including line layer, light shield layer, multiple light emitting diodes and encapsulated layer.The thickness of line layer is less than 100 microns.Light shield layer is located on line layer.Light shield layer has multiple openings.Light emitting diode is configured on line layer and is located in the opening of light shield layer.Light emitting diode is electrically connected with line layer.Encapsulated layer covers light shield layer.The refractive index of encapsulated layer is between 1.4 to 1.7.The Young's modulus of encapsulated layer is greater than or equal to 1GPa.The thickness of encapsulated layer is greater than the thickness of light emitting diode.
Description
Technical field
The present invention relates to a kind of photoelectric cell structure and its manufacturing methods, and more particularly to a kind of LED package
And its manufacturing method.
Background technique
Light emitting diode (light emitting diode；LED) have that such as service life is long, small in size, high shock resistance, low
The advantages that heat generation and low power consumption, therefore it has been widely used in household and indicator or light source in various equipment.Closely
Nian Lai, light emitting diode develops towards multicolour and high brightness, therefore its application field has extended to large-scale billboards, traffic
Red signal lamp used by rail workers and related fields.In future, light emitting diode possibly even becomes the primary illumination light for having both power saving and environment-friendly function
Source.
In the general display device with light emitting diode, it can usually pass through surface mounted component (surface mount
devices；SMD) technology or chip direct package (chip on board；COB) light emitting diode is configured at route base by technology
On plate.However, in surface mounted component technology, be limited to package body sizes be likely to result in the period it is miniature be not easy, also, its
The arrangement mode of light emitting diode is likely to result in colour cast, or color difference is generated on different visual angles, and then influences display quality.
In addition, in chip direct package technology, due to being that LED core is directly packaged in the route with driving element
On substrate, therefore, the more difficult and more difficult repairing (repair) in detection, therefore packaging cost is higher.Therefore, how to pass through hair
Optical diode encapsulation structure or its manufacture improvement, to promote the yield and reliability of its product, with reduce manufacture at
This, and there is preferable display quality again, the project for wanting to solve at present is had become in fact.
Summary of the invention
The present invention provides a kind of LED package and its manufacturing method, with preferable display quality and lower
Cost.
One embodiment of the invention provides a kind of LED package comprising line layer, light shield layer, multiple light-emitting diodes
Pipe and encapsulated layer.Less than 100 microns (micrometer of the thickness of line layer；μm).Light shield layer is located on line layer.Light shield layer
With multiple openings.Light emitting diode is configured on line layer and is located in the opening of light shield layer.Light emitting diode and line layer
Electrical connection.Encapsulated layer covers light shield layer.The refractive index of encapsulated layer is between 1.4 to 1.7.The Young's modulus of encapsulated layer
(Young's modulus) is greater than or equal to 10 hundred million Pascal (gigapascal；GPa).The thickness of encapsulated layer is greater than luminous two
The thickness of pole pipe.
One embodiment of the invention provides a kind of manufacturing method of LED package comprising following steps.Temporary
Line layer is formed on support plate.Line layer has first surface and a second surface relative to first surface, and second surface towards
Temporary support plate.Light shield layer is formed on the first surface of line layer.Light shield layer has the first opening and multiple second openings,
In the first opening expose the temporary support plate of part.Multiple light emitting diodes are configured on line layer.Light emitting diode, which is located at, to be opened
In mouthful, and light emitting diode is electrically connected to line layer.Encapsulated layer is formed on temporary support plate, to cover light shield layer and multiple hairs
Optical diode.Temporary support plate is removed, to expose the second surface of line layer.Multiple companies are formed on the second surface of line layer
Connection pad.Singulation manufacture craft is carried out, to constitute multiple LED packages.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is attached appended by cooperation
Figure is described in detail below.
Detailed description of the invention
Figure 1A to Fig. 1 J is the diagrammatic cross-section of the manufacturing method of the LED package of the first embodiment of the present invention；
Fig. 1 K is the upper schematic diagram of the LED package of the first embodiment of the present invention；
Fig. 1 L is the lower view schematic diagram of the LED package of the first embodiment of the present invention；
Fig. 1 M is the circuit diagram of the LED package of the first embodiment of the present invention；
Fig. 2A to Fig. 2 J is that the section of the part manufacturing method of the LED package of the second embodiment of the present invention shows
It is intended to.
Fig. 2 K is the upper schematic diagram of the LED package of the second embodiment of the present invention；
Fig. 3 A to Fig. 3 I is that the section of the part manufacturing method of the LED package of the third embodiment of the present invention shows
It is intended to；
Fig. 3 J is the lower view schematic diagram of the LED package of the third embodiment of the present invention；
Fig. 4 A to Fig. 4 I is that the section of the part manufacturing method of the LED package of the fourth embodiment of the present invention shows
It is intended to；
Fig. 5 A to Fig. 5 H is that the section of the part manufacturing method of the LED package of the fifth embodiment of the present invention shows
It is intended to.
Symbol description
100,200,300,400,500: LED package
100a, 200a: boundary
10: temporary support plate
110: line layer
110a: first surface
110b: second surface
110c: side wall
120,220,320,420: light shield layer
121,221,321,421: the first opening
122,222,322,422: the second opening
120a: shading top surface
224: third opening
530: light emitting diode
131,231: the first light emitting diode
132,232: the second light emitting diode
133,233: third light emitting diode
130a, 230a, 530a: go out spire face
141: connection terminal
242: conduction connects adhesion coating
150: encapsulated layer
160,360: connection gasket
161: the first connection gaskets
162: the second connection gaskets
163: third connection gasket
164,364: sharing connection pad
365: data connection pad
366: scanning connection gasket
367: power connection pad
270: dielectric layer
271: penetration electrode layer
380,480: element layer
591: the first light conversion layers
592: the second light conversion layers
590a: conversion layer surface
Specific embodiment
Figure 1A to Fig. 1 J is the diagrammatic cross-section of the manufacturing method of the LED package of the first embodiment of the present invention.
Fig. 1 K is the upper schematic diagram of the LED package of the first embodiment of the present invention.Fig. 1 L is the first embodiment of the present invention
LED package lower view schematic diagram.Fig. 1 M is the circuit of the LED package of the first embodiment of the present invention
Figure.
Firstly, please referring to Figure 1A, temporary support plate 10 is provided.The material of temporary support plate 10 can be glass, quartz, chip, have
Machine polymer or metal etc..Other suitable materials can also be used as temporary support plate 10, as long as material above-mentioned can be held
Load is formed by film layer or component above, and is able to bear subsequent manufacture craft, is not subject in the present invention
Limitation.
Then, Figure 1B is please referred to, forms line layer 110 on temporary support plate 10.Line layer 110 has first surface 110a
With the second surface 110b relative to first surface 110a, and second surface 110b is contacted with temporary support plate 10.Specifically, line
The production method of road floor 110 can be for example including the following steps.It is possible, firstly, to pass through deposition manufacture craft or other suitable production
Technique is to form conductive materials on temporary support plate 10.It is then possible to make work by the similar patterning such as photoetching and etching
Skill patterns the conductive materials on temporary support plate 10, to form line layer 110.In general, passing through above-mentioned formation side
Formula can make the thickness of line layer 110 less than 100 microns.However, generation type and thickness of the present invention for line layer 110
And it is without restriction.In addition, line layer 110 is usually to use metal material, however the present invention is unlimited based on the considerations of electric conductivity
In this.According to other embodiments, other conductive materials are also can be used in line layer 110, and being, for example, includes alloy, metal oxidation
Object, metal nitride, metal oxynitride, graphene, nano carbon tube, other suitable conductive materials or above-mentioned at least the two
The stack layer of material.
In some embodiments, formed line layer 110 before on temporary support plate 10, can on temporary support plate 10 shape
It (is not painted) at debonding layer, debonding layer is, for example, photothermal conversion (light to heatconversion；LTHC) release layer
Or other appropriate materials, it is release between temporary support plate 10 and line layer 110 can be promoted in manufacture craft later
Property (releasability).
Then, Fig. 1 C is please referred to, after forming line layer 110, forms light shield layer 120 on line layer 110.It is general and
Speech, the material of light shield layer 120 can be resin, dielectric material or metal etc., and the mode for forming light shield layer 120 may include exposing
Light manufacture craft, development manufacture craft or plated film manufacture craft are opened with forming multiple first openings 121 and multiple second
Mouth 122.First opening 121 and the second opening 122 run through line layer 110, at least to expose temporary support plate 10.Also, second
Opening 122 also exposes part the first surface 110a and side wall 110c of line layer 110.In the present embodiment, the first opening 121
It such as can be a groove, and the first opening 121 of channel form can surround multiple second openings 122, and in subsequent production
In technique, the first opening 121 of channel form can substantially define the size of LED package 100.
In the present embodiment, the first opening 121 exposes the side wall 110c of line layer 110, however, the present invention is not limited thereto.?
In other embodiments, light shield layer 120 can also cover the side wall 110c of line layer 110 in the first opening 121.
Then, Fig. 1 D is please referred to, multiple first light emitting diodes 131 are configured on line layer 110, and first shines
Diode 131 is located in corresponding second opening 122.The configuration of first light emitting diode 131 can for example be shifted by flood tide
Manufacture craft (mass transfer process) carries out, however, the present invention is not limited thereto.
Then, Fig. 1 E is please referred to, can be by the configuration mode similar to the first light emitting diode 131, it sequentially will be multiple
Second light emitting diode 132 is configured on line layer 110 with multiple third light emitting diodes 133 (being illustrated in Fig. 1 K).First hair
Optical diode 131, the second light emitting diode 132 are located in the second different openings 122 from third light emitting diode 133.
In the present embodiment, light emitting diode 131,132,133 can be luminous two with transverse direction (lateral) structure
Pole pipe, and light emitting diode 131,132,133 can be in a manner of flip-chip bonded (flip-chipbonding), to pass through connecting pin
For son 141 to be electrically connected with corresponding line layer 110, connection terminal 141 is, for example, soldered ball, however, the present invention is not limited thereto.
In the present embodiment, light emitting diode 131,132,133 go out spire face 130a can be with the shading of light shield layer 120
Top surface 120a is flushed, however, the present invention is not limited thereto.In other embodiments, the spire face out of light emitting diode 131,132,133
130a can be lower than the shading top surface 120a of light shield layer 120.That is, out between spire face 130a and first surface 110a
Distance can be less than the distance between shading top surface 120a and first surface 110a.
Then, it referring to Fig. 1 E and Fig. 1 F, is configured on line layer 110 by light emitting diode 131,132,133
And after being electrically connected, the encapsulated layer 150 with light transmitting property is formed on temporary support plate 10, to cover light shield layer 120 and hair
Optical diode 131,132,133.Also, encapsulated layer 150 can also insert the first opening 121 and the second opening of light shield layer 120
In 122, to cover the temporary support plate 10 that the first opening 121 and the second opening 122 are exposed.In the present embodiment, encapsulated layer
150 forming method is, for example, to pass through rubbing method, Method for bonding, sol-gal process (Sol-Gel method) or pressing method with will be saturating
Bright encapsulating material is formed on light shield layer 120 and light emitting diode 131,132,133, and transparent encapsulation material more fills in
In one opening 121 and the second opening 122.It is then possible to which the property according to transparent encapsulation material carries out photopolymerization
(photopolymerization) or (baking) manufacture craft is toasted, is solidified to form transparent encapsulation material and is worn with light
The encapsulated layer 150 of permeability.The material of encapsulated layer 150 can be hydrocarbon polymer (polymer) material with chain structure, example
Such as rubber series glue material, acryl series glue material or silicon series glue material, however, the present invention is not limited thereto.The poplar of encapsulated layer 150
Family name's modulus can be greater than or equal to 1GPa, to reduce the light emitting diode 131,132,133 and route that packed layer 150 is encapsulated
The impaired possibility of layer 110.In general, the refractive index of encapsulated layer 150 is between 1.4 to 1.7, however, the present invention is not limited thereto.
It then,, can be by removing manufacture craft after forming encapsulated layer 150 referring to Fig. 1 F and Fig. 1 G
(debonding process) removes temporary support plate 10, to expose the second surface 110b of line layer 110.In other words, this reality
The LED package 100 (being illustrated in Fig. 1 J) for applying example can be without substrate without substrate package part
(substrateless package)。
It in the present embodiment, can be mechanically with the second surface by temporary support plate 10 from line layer 110
It is removed on 110b, however, the present invention is not limited thereto.To have the embodiment of debonding layer between temporary support plate 10 and line layer 110
For, thermal energy or luminous energy (such as: heating or ultraviolet light (UV light) irradiate) can be applied to debonding layer.In this way, can
So that debonding layer loses adherence, and temporary support plate 10 can be made easily to shell from the second surface 110b of line layer 110
From.
Then, Fig. 1 H is please referred to, forms multiple connection gaskets 160, each connection on the second surface 110b of line layer 110
Pad 160 can be by line layer 110 to be electrically connected with corresponding light emitting diode 131,132,133.Specifically, connection gasket
160 production method can be for example including the following steps.It is possible, firstly, to pass through deposition manufacture craft or other suitable manufacture crafts
To form conductive materials on the second surface 110b of line layer 110.It is then possible to pass through the similar patterns such as photoetching and etching
Change manufacture craft, the conductive materials on second surface 110b is patterned, to form connection gasket 160.However, the present invention for
The generation type of connection gasket 160 is simultaneously without restriction.In addition, connection gasket 160 is usually to use metal based on the considerations of electric conductivity
Material, however the invention is not limited thereto.According to other embodiments, other conductive materials are also can be used in connection gasket 160, such as
Being includes alloy, metal oxide, metal nitride, metal oxynitride, graphene, nano carbon tube, other suitable conductions
The stack layer of material or above-mentioned at least the two material.In addition, in some embodiments, can also have plating on connection gasket 160
There is the coating of the metal layers such as nickel, palladium, gold or alloy-layer, to promote the engaging force between connection gasket 160 and other film layers or element.
Then, referring to Fig. 1 I and Fig. 1 J.As shown in Figure 1 I, singulation manufacture craft can be passed through
(singulation process), to form multiple LED package 100 as shown in figure iJ.For example, can pass through
High pressure waterjet (water jet cutter) technology, laser cutting (laser cutting) technology or machine cuts
(mechanical cutting) technology to remove the encapsulated layer 150 in the first opening 121, and forms multiple light emitting diodes
Encapsulation 100.It is worth noting that, after carrying out singulation manufacture craft, after similar component symbol will be used for singulation
Element.For example, the line layer 110 after singulation is referred to as line layer 110, light emitting diode after singulation 131,132,
133 are referred to as light emitting diode 131,132,133, the referred to as encapsulated layer 150 of the encapsulated layer 150 after singulation, after singulation
Connection gasket 160 is referred to as connection gasket 160 etc., such.Element after other monomers will follow above-mentioned identical element symbol
Number rule, will not be repeated here in this.
Referring to Fig. 1 J to Fig. 1 M, luminous the two of the present embodiment can be substantially completed after above-mentioned manufacture craft
The production of pole pipe encapsulation 100.It is worth noting that, for refinement letter simply to indicate, Fig. 1 K only depict light emitting diode 131,
132,133 with light shield layer 120.Also, Fig. 1 L only depicts the positional relationship between multiple connection gaskets 160, but multiple connection gaskets
The demand that positional relationship between 160 can be designed according to route is adjusted, in the present invention and without restriction.
Above-mentioned LED package 100 may include line layer 110, light shield layer 120, multiple light emitting diodes 131,
132,133, encapsulated layer 150 and multiple connection gaskets 160.Line layer 110 has first surface 110a and relative to first surface
The second surface 110b of 110a.The thickness of line layer 110 is less than 100 microns.Light shield layer 120 is located at the first table of line layer 110
On the 110a of face.Light shield layer 120 has multiple openings.Light emitting diode 131,132,133 is configured at the first surface of line layer 110
110a is upper and is located in the opening of light shield layer 120.Light emitting diode 131,132,133 is electrically connected with line layer 110.Encapsulated layer
150 covering light shield layers 120 and light emitting diode 131,132,133.The refractive index of encapsulated layer 150 is between 1.4 to 1.7.
The Young's modulus of encapsulated layer 150 is greater than or equal to 1GPa.The thickness of encapsulated layer 150 is greater than light emitting diode 131,132,133
Thickness.Multiple connection gaskets 160 are located on the second surface 110b of the line layer 110, and the quantity of connection gasket 160 is greater than luminous two
The quantity of pole pipe 131,132,133.
In the present embodiment, encapsulated layer 150 be isolation material, and encapsulated layer 150 also insert configure light emitting diode 131,
132, in 133 the second 122 (being illustrated in Fig. 1 E) of opening, with the exposed line layer 110 of further covering opening.
In the present embodiment, the difference of the quantity of connection gasket 160 and the quantity of light emitting diode 131,132,133 is 1.With
For embodiment depicted in Fig. 1 J to Fig. 1 M, multiple light emitting diodes 131,132,133 include the first light emitting diode 131,
Second light emitting diode 132 and third light emitting diode 133, multiple connection gaskets 160 connect including the first connection gasket 161, second
Connection pad 162, third connection gasket 163 and shared connection pad 164.First connection gasket 161 is electrically connected to the first light emitting diode 131
Cathode.Second connection gasket 162 is electrically connected to the cathode of the second light emitting diode 132.Third connection gasket 163 is electrically connected to third hair
The cathode of optical diode 133.Also, it shares connection pad 164 and is electrically connected to the anode of the first light emitting diode 131, second luminous two
The anode of pole pipe 132 and the anode of third light emitting diode 133.That is, in the present embodiment, multiple light emitting diodes
131,132,133 are configured by the way of common-anode, however, the present invention is not limited thereto.It is multiple in other feasible embodiments
Light emitting diode 131,132,133 is configured by the way of common cathode, in the present invention and without restriction.
In the present embodiment, the first light emitting diode 131, the second light emitting diode 132 and third light emitting diode 133
The light of different colours, and the first light emitting diode 131, the second light emitting diode 132 and third luminous two can be issued respectively
Pole pipe 133 can be to be staggered the configuration mode of (Delta) using triangle.In this way, each light emitting diode 131,
132, the shortest distance between 133 and the boundary 100a of LED package 100 will not have a too big gap, thus can be with
Promote display quality.
Fig. 2A to Fig. 2 J is that the section of the part manufacturing method of the LED package of the second embodiment of the present invention shows
It is intended to.Fig. 2 K is the upper schematic diagram of the LED package of the second embodiment of the present invention.In the present embodiment, luminous two
The manufacturing method of pole pipe encapsulation 200 is similar to the manufacturing method of LED package 100, and similar component is with identical mark
Number indicate and there is similar, material or generation type, and omit description.Specifically, Fig. 2A to Fig. 2 J is hookup
The diagrammatic cross-section of the manufacturing method of the LED package of the step of 1B.
Hookup 1B, referring to figure 2. A, in the present embodiment, after forming line layer 110, the shape on temporary support plate 10
At light shield layer 220.Light shield layer 220 has first the 221, second opening 222 of opening and third 224 (being illustrated in Fig. 2 K) of opening.
First opening 221 and the second opening 222 run through line layer 110, at least to expose temporary support plate 10.Third opening 224 is to pass through
The through-hole of light shield layer 220 is worn, to expose the temporary support plate 10 not covered by line layer 110.In addition to this, the second opening
222 can also expose part the first surface 110a and side wall 110c of line layer 110.In the present embodiment, the first opening 221
It such as can be a groove, and the first opening 221 of channel form can surround multiple second openings 222, and in subsequent production
In technique, the first opening 221 of channel form can substantially define the size of LED package 200.
In the present embodiment, the first opening 221 exposes the side wall 110c of line layer 110, however, the present invention is not limited thereto.?
In other embodiments, light shield layer 220 can also cover the side wall 110c of line layer 110 in the first opening 221.
In the present embodiment, the material or generation type of light shield layer 220 can be with the materials of the light shield layer 120 of previous embodiment
Matter or generation type are similar, however, the present invention is not limited thereto.
Then, B referring to figure 2., multiple first light emitting diodes 231 are configured on line layer 110, and first shines two
Pole pipe 231 is located in corresponding second opening 222.In the present embodiment, the configuration mode of the first light emitting diode 231 can be with
The configuration mode of first light emitting diode 131 of previous embodiment is similar, therefore will not be repeated here in this.
Then, C referring to figure 2., can be by being similar to the configuration mode of the first light emitting diode 231, sequentially will be multiple
Second light emitting diode 232 is configured on line layer 110 with multiple third light emitting diodes 233 (being illustrated in Fig. 2 K).First hair
Optical diode 231, the second light emitting diode 232 are located in the second different openings 222 from third light emitting diode 233.
In the present embodiment, light emitting diode 231,232,233 can be shining with vertical (vertical) structure
Diode, so that light emitting diode 231,232,233 is electrically connected with corresponding line layer 110.In some embodiments, luminous two
Can have conductive adhesion coating 242 between pole pipe 231,232,233 and line layer 110, conductive adhesion coating 242 be, for example, weld pad or
Conductive adhesive film (Conductive Film；CF), however, the present invention is not limited thereto.
Then, D referring to figure 2. forms dielectric layer 270 on temporary support plate 10.In the present embodiment, dielectric layer 270
Forming method is, for example, to pass through rubbing method, Method for bonding, sol-gal process (Sol-Gel method) or pressing method with by dielectric material
In the second opening 222 of material filling.It is then possible to which the property according to dielectric material carries out photopolymerization
(photopolymerization) or (baking) manufacture craft is toasted, makes dielectric cure and forms dielectric layer 270, with
At least the contact that is electrically connected between light emitting diode 231,232,233 and line layer 110 is sealed, is electrically connected to avoid with above-mentioned
Contact is contacted with other conductive film layers.The material of dielectric layer 270 can be the hydrocarbon polymer with chain structure
(polymer) material, such as rubber series glue material, acryl series glue material or silicon series glue material, but the present invention is not limited to
This.
Then, E referring to figure 2. forms penetration electrode layer 271.The covering of penetration electrode layer 271 light emitting diode 231,
232,233 light shield layer 220 gone out between spire face 230a and light emitting diode 231,232,233, and also insert light shield layer
In 220 third opening 224.That is, multiple light emitting diodes 231,232,233 can pass through penetration electrode layer 271
And it is electrically connected to each other.The material of penetration electrode layer 271 includes metal oxide, e.g. zinc oxide (ZnO), tin oxide
(SnO), indium zinc oxide (Indium-Zinc Oxide；IZO), gallium oxide zinc (Gallium-Zinc Oxide；GZO), zinc oxide
Tin (Zinc-Tin Oxide；) or tin indium oxide (Indium-Tin Oxide ZTO；ITO) or other suitable oxides or
Person is the stack layer of above-mentioned at least the two, however, the present invention is not limited thereto.
Then, F referring to figure 2. forms the encapsulated layer 150 with light transmitting property on temporary support plate 10, and fills in the
One opening 221, to cover the light shield layer 220 and penetration electrode layer 271 that are located on line layer 110.
Then, G referring to figure 2., removes temporary support plate 10, to expose the second surface 110b of line layer 110.
Then, H referring to figure 2., forms multiple connection gaskets 160, each connection on the second surface 110b of line layer 110
Pad 160 can be by line layer 110 to be electrically connected with corresponding light emitting diode 231,232,233.
Then, referring to Fig. 2 I and Fig. 2 J.As shown in figure 2i, singulation manufacture craft can be passed through
(singulation process), to form multiple LED package 200 as shown in fig. 2j.It is worth noting that, into
After row singulation manufacture craft, similar component symbol is by the element after being used for singulation.For example, the line after singulation
Road floor 110 is referred to as line layer 110, the light emitting diode 231,232,233 after singulation be referred to as light emitting diode 231,
232,233, the dielectric layer 270 after singulation is referred to as dielectric layer 270, and the penetration electrode layer 271 after singulation, which is referred to as, to be worn
Saturating formula electrode layer 271, the encapsulated layer 150 after singulation are referred to as encapsulated layer 150, and the connection gasket 160 after singulation, which is referred to as, to be connected
Connection pad 160 etc., it is such.Element after other monomers will follow above-mentioned identical component symbol rule, not be subject in this
It repeats.
Referring to Fig. 2 J to Fig. 2 K, luminous the two of the present embodiment can be substantially completed after above-mentioned manufacture craft
The production of pole pipe encapsulation 200.It is worth noting that, for refinement letter simply to indicate, Fig. 2 K only depict light emitting diode 231,
232,233, light shield layer 220, the third opening 224 of light shield layer 220 and penetration electrode layer 271.Penetration electrode layer 271 covers
It is placed on light emitting diode 231,232,233 and light shield layer 220, and inserts in the third opening 224 of light shield layer 220.
The LED package 200 of the present embodiment is similar with the LED package 100 in Fig. 1 J to Fig. 1 M, difference
Be: light emitting diode 231,232,233 can be the light emitting diode with vertical structure.Penetration electrode layer 271 covers
In multiple light emitting diodes 231,232,233 to go out spire face 230a upper and insert the third of light shield layer 220 and be open in 224, with
Make multiple light emitting diodes 231,232,233 by penetration electrode layer 271 to be electrically connected with shared connection pad 164.
It is in the present embodiment, more similar to multiple light emitting diodes 131,132,133 in LED package 100
A light emitting diode 231,232,233 can be to be configured by the way of common-anode, however, the present invention is not limited thereto.It is feasible at other
Embodiment in, multiple light emitting diodes 231,232,233 are configured by the way of common cathode, are not subject in the present invention
Limitation.
In the present embodiment, the first light emitting diode 231, the second light emitting diode 232 and third light emitting diode 233
The light of different colours, and the first light emitting diode 231, the second light emitting diode 232 and third luminous two can be issued respectively
Pole pipe 233 can be to be staggered the configuration mode of (Delta) using triangle.In this way, each light emitting diode 231,
232, the shortest distance between 233 and the boundary 200a of LED package 200 will not have a too big gap, thus can be with
Promote display quality.
Fig. 3 A to Fig. 3 I is cutd open according to the part manufacturing method of the LED package of the third embodiment of the present invention
Face schematic diagram.Fig. 3 J is the lower view schematic diagram according to the LED package of the third embodiment of the present invention.In the present embodiment
In, the manufacturing method of LED package 300 is similar to the manufacturing method of LED package 100,200, similar
Component is indicated with identical label, and has the function of similar, material or generation type, and omits description.Specifically, Fig. 3 A
To Fig. 3 I be hookup 1B the step of LED package manufacturing method diagrammatic cross-section.
Hookup 1B, referring to figure 3. A, in the present embodiment, after forming line layer 110, the shape on line layer 110
At element layer 380, and it is electrically connected to line layer 110.Element layer 380 may include multiple being made of active member and conducting wire
Drive circuit unit.Active member is, for example, transistor, and conducting wire is, for example, scan line and data line electrically isolated from each other, but
The invention is not limited thereto.In addition, element layer 380 also may include capacitor, resistance according to the demand in route design (layout)
Or other similar passive device, with the voltage, electric current or delay for adjusting electronic signal.And conducting wire above-mentioned, active element
Part, passive device or other be located at the electronic component in element layer 380 and can be formed by general semiconductor fabrication process,
It will not be repeated here in this.
Then, B forms light shield layer 320 after forming element layer 380 on line layer 110 referring to figure 3., with cladding
Element layer 380 on line layer 110, and the line layer 110 of covering part.Light shield layer 320 has multiple first openings 321
And multiple second openings 322.First opening 321 and the second opening 322 run through line layer 110, at least to expose temporary load
Plate 10.Also, the second opening 322 also exposes part the first surface 110a and side wall 110c of line layer 110.In the present embodiment
In, the first opening 321 for example can be a groove, and the first opening 321 of channel form can surround multiple second openings 322,
And in subsequent manufacture craft, the first opening 321 of channel form can substantially define the ruler of LED package 300
It is very little.
In the present embodiment, the first opening 321 exposes the side wall 110c of line layer 310, however, the present invention is not limited thereto.?
In other embodiments, light shield layer 320 can also cover the side wall 110c of line layer 110 in the first opening 321.
In the present embodiment, the material or generation type of light shield layer 320 can be with the materials of the light shield layer 120 of previous embodiment
Matter or generation type are similar, however, the present invention is not limited thereto.
Then, C referring to figure 3., multiple first light emitting diodes 131 are configured on line layer 110, and first shines two
Pole pipe 131 is located in corresponding second opening 322.In the present embodiment, the configuration mode of the first light emitting diode 131 can be with
The configuration mode of first light emitting diode 131 of previous embodiment is similar, therefore will not be repeated here in this.
Then, D referring to figure 3., can be by being similar to the configuration mode of the first light emitting diode 131, sequentially will be multiple
Second light emitting diode 132 is configured on line layer 110 (as depicted in Fig. 1 K) with multiple third light emitting diodes 133.First
Light emitting diode 131, the second light emitting diode 132 are located at the second different openings 322 from third light emitting diode 133
It is interior.
In the present embodiment, light emitting diode 131,132,133 can be the light emitting diode with transverse structure, and send out
Optical diode 131,132,133 can be in a manner of flip-chip bonded, to pass through connection terminal 141 with electric with corresponding line layer 110
Connection, and be electrically connected with element layer 380.
Then, it referring to Fig. 3 D and Fig. 3 E, is configured on line layer 110 by light emitting diode 131,132,133
And after being electrically connected, the encapsulated layer 150 with insulating property (properties) is formed on temporary support plate 10, and fill in the first opening 321 with
In second opening 322, to cover light shield layer 320 and light emitting diode 131,132,133.
Then, temporary support plate 10 is removed, to expose after forming encapsulated layer 150 referring to Fig. 3 E and Fig. 3 F
The second surface 110b of line layer 110.
Then, G referring to figure 3., forms multiple connection gaskets 360, each connection on the second surface 110b of line layer 110
Pad 360 can be by line layer 110 to be electrically connected with corresponding light emitting diode 131,132,133 and element layer 380.Connection gasket
The material or generation type that 360 material or generation type can be similar to the connection gasket 160 in previous embodiment are (such as Fig. 1 H institute
The step of being painted), therefore will not be repeated here in this.
Then, referring to Fig. 3 H and Fig. 3 I.As shown in figure 3h, singulation manufacture craft can be passed through
(singulation process), to form multiple LED package 300 as shown in fig. 31.It is worth noting that, into
After row singulation manufacture craft, similar component symbol is by the element after being used for singulation.For example, the line after singulation
Road floor 110 is referred to as line layer 110, and the element layer 380 after singulation is referred to as element layer 380, the light shield layer 320 after singulation
Referred to as light shield layer 320, the light emitting diode 131,132,133 after singulation is referred to as light emitting diode 131,132,133, single
Encapsulated layer 150 after body is referred to as encapsulated layer 150, and the connection gasket 360 after singulation is referred to as connection gasket 360 etc., all such
Class.Element after other monomers will follow above-mentioned identical component symbol rule, will not be repeated here in this.
Referring to Fig. 3 I, the light emitting diode envelope of the present embodiment can be substantially completed after above-mentioned manufacture craft
Fill 300 production.It is worth noting that, being refinement letter simply to indicate, Fig. 3 J only depicts the position between multiple connection gaskets 360
Relationship is set, but the demand that the positional relationship between multiple connection gaskets 360 can be designed according to route is adjusted, in the present invention
In and it is without restriction.
The LED package 300 of the present embodiment is similar with the LED package 100 in Fig. 1 J to Fig. 1 M, difference
Be: LED package 300 further includes element layer 380, and the quantity of connection gasket 360 and light emitting diode 131,132,
The difference of 133 quantity is 3.
In the present embodiment, element layer 380 includes multiple active members (not being painted), scan line (not being painted), a plurality of number
According to line (not being painted), power supply line (not being painted) and ground line (not being painted), and multiple connection gaskets 360 include multiple data connections
Pad 365, scanning connection gasket 366, power connection pad 367 and shared connection pad 364, known this field person can complete matching for circuit
It sets, not described here any more.Wherein, the quantity of data connection pad 365 is identical as the quantity of light emitting diode 131,132,133.
Fig. 4 A to Fig. 4 I is cutd open according to the part manufacturing method of the LED package of the fourth embodiment of the present invention
Face schematic diagram.In the present embodiment, the manufacturer of the manufacturing method of LED package 400 and LED package 100
Method is similar, and similar component is indicated with identical label, and has the function of similar, material or generation type, and omits and retouch
It states.Specifically, the diagrammatic cross-section of the manufacturing method of the LED package for the step of Fig. 4 A to Fig. 4 I is hookup 1B.
Hookup 1B, referring to figure 4. A, in the present embodiment, after forming line layer 110, the shape on line layer 110
At element layer 480, and it is electrically connected to line layer 110.In the present embodiment, the configuration mode of element layer 480 can be with aforementioned reality
The configuration mode for applying the element layer 380 of example is similar, the difference is that: the first surface of line layer 110 is completely covered in element layer 480
110a, and element layer 480 can expose the temporary support plate 10 in the part not covered by line layer 110.
Then, B forms light shield layer 420 after forming element layer 480 on element layer 480 referring to figure 4..Light shield layer
420 have multiple first openings 421 and multiple second openings 422.First opening 421 expose part not by element layer
The 480 temporary support plates 10 covered with line layer 110, and the second opening 422 exposes the element layer 480 of part.In this implementation
In example, the first opening 421 for example can be a groove, and the first opening 421 of channel form can be around multiple second openings
422, and in subsequent manufacture craft, the first opening 421 of channel form can substantially define LED package 400
Size.
In the present embodiment, the first opening 421 exposes the side wall 110c of line layer 110, however, the present invention is not limited thereto.?
In other embodiments, light shield layer 420 can also cover the side wall 110c of line layer 110 in the first opening 421.
In the present embodiment, the material or generation type of light shield layer 420 can be similar to the light shield layer in previous embodiment
120 material or generation type, however, the present invention is not limited thereto.
Then, C referring to figure 4., multiple first light emitting diodes 131 are configured on element layer 480, and first shines two
Pole pipe 131 is located in corresponding second opening 422.
Then, D referring to figure 4., can be by being similar to the configuration mode of the first light emitting diode 131, sequentially will be multiple
Second light emitting diode 132 is configured on element layer 480 (as depicted in Fig. 1 K) with multiple third light emitting diodes 133.First
Light emitting diode 131, the second light emitting diode 132 are located at the second different openings 422 from third light emitting diode 133
It is interior.
In the present embodiment, light emitting diode 131,132,133 can be the light emitting diode with transverse structure, and send out
Optical diode 131,132,133 can be in a manner of flip-chip bonded, to pass through connection terminal 141 with electric with corresponding element layer 480
Connection, and be electrically connected with line layer 110.
Then, D and Fig. 4 E referring to figure 4. are configured on line layer 110 and electricity by light emitting diode 131,132,133
After connection, the encapsulated layer 150 with insulating property (properties) is formed on temporary support plate 10, and fill in the first opening 421 and second
In opening 422, to cover light shield layer 420 and light emitting diode 131,132,133.
Then, temporary support plate 10 is removed, to expose after forming encapsulated layer 150 referring to Fig. 4 E and Fig. 4 F
The second surface 110b of line layer 110.
Then, G referring to figure 4., forms multiple connection gaskets 360, each connection on the second surface 110b of line layer 110
Pad 360 can be by line layer 110 to be electrically connected with corresponding light emitting diode 131,132,133 and element layer 480.
Then, referring to Fig. 4 H and Fig. 4 I.It as shown at figure 4h, can be more to be formed by singulation manufacture craft
A LED package 400 as shown in fig. 41.It is worth noting that, after carrying out singulation manufacture craft, similar member
Part symbol is by the element after being used for singulation.For example, the line layer 110 after singulation is referred to as line layer 110, singulation
Element layer 480 afterwards is referred to as element layer 480, and the light shield layer 420 after singulation is referred to as light shield layer 420, the hair after singulation
Optical diode 131,132,133 is referred to as light emitting diode 131,132,133, and the encapsulated layer 150 after singulation, which is referred to as, to be encapsulated
Layer 150, the connection gasket 360 after singulation is referred to as connection gasket 360 etc., such.Element after other monomers will follow
Above-mentioned identical component symbol rule, will not be repeated here in this.
Referring to Fig. 3 I to Fig. 3 J, luminous the two of the present embodiment can be substantially completed after above-mentioned manufacture craft
The production of pole pipe encapsulation 400.The LED package 400 and the LED package in Fig. 3 I to Fig. 3 J of the present embodiment
300 is similar, and difference is: element layer 480 is located between light emitting diode 131,132,133 and line layer 110, and light-emitting diodes
Pipe 131,132,133 is by element layer 480 to be electrically connected to line layer 110.
Fig. 5 A to Fig. 5 H is that the section of the part manufacturing method of the LED package of the fifth embodiment of the present invention shows
It is intended to.In the present embodiment, the manufacturing method phase of the manufacturing method of LED package 500 and LED package 100
Seemingly, similar component is indicated with identical label, and has the function of similar, material or generation type, and omits description.Tool
For body, Fig. 5 A to Fig. 5 H be hookup 1C the step of LED package manufacturing method diagrammatic cross-section.
Hookup 1C, referring to figure 5. A, in the present embodiment, after forming light shield layer 120, by multiple light emitting diodes
530 are configured on line layer 110, and these light emitting diodes 530 are located in corresponding second opening 122.In this implementation
In example, the configuration mode of light emitting diode 530 can be with the configuration mode of the light emitting diode 131,132,133 of previous embodiment
It is similar, the difference is that: these light emitting diodes 530 can issue the light of same color, and the light out of light emitting diode 530 respectively
Top surface 530a is lower than the shading top surface 120a of light shield layer 120.That is, out between spire face 530a and first surface 110a
Distance is less than the distance between shading top surface 120a and first surface 110a.
In the present embodiment, light emitting diode 530 can be the light emitting diode with transverse structure, and light emitting diode
530 can in a manner of flip-chip bonded, with by connection terminal 141 with corresponding line layer 110 be electrically connected, connection terminal 141
For example, soldered ball, however, the present invention is not limited thereto.
Then, B referring to figure 5., forms the first light conversion layer 591 on part light emitting diode 530.
Then, C referring to figure 5., forms the second light conversion layer 592 on other parts light emitting diode 530.
In the present embodiment, the first light conversion layer 591 and/or the second light conversion layer 592 are, for example, quantum dot or fluorescent powder
Material, however the invention is not limited thereto.As long as the can be passed through in the case where light emitting diode 530 is single luminescent color
Single luminescent color is converted and can be shown the hair of three kinds of different colors by one light conversion layer 591 and/or the second light conversion layer 592
The combination of 530/ light conversion layer of optical diode.For example, in the present embodiment, light emitting diode 530 can issue indigo plant
Light, and the first light conversion layer 591 being located on part light emitting diode 530 can be absorbed blue light and release feux rouges, and be located at portion
The second light conversion layer 592 on distribution optical diode 530 can be absorbed blue light and release green light.
In other embodiments, it is possible to have third light conversion layer (is not painted), and third light conversion layer can be located at
On part light emitting diode 530.For example, light emitting diode 530 can issue near ultraviolet (near-UV) light, and be located at portion
The first light conversion layer 591 on distribution optical diode 530 can be absorbed black light and release feux rouges, shine positioned at another part
The second light conversion layer 592 on diode 530 can be absorbed black light and release green light, and be located at another part light-emitting diodes
Third light conversion layer on pipe 530 can be absorbed black light and release blue light.
In the present embodiment, the conversion layer top surface 590a of light conversion layer 591,592 can be with the shading top surface of light shield layer 120
120a is flushed, however, the present invention is not limited thereto.In other embodiments, the conversion layer top surface 590a of light conversion layer 591,592 can be with
Lower than the shading top surface 120a of light shield layer 120.That is, the distance between conversion layer top surface and first surface 110a can be small
In the distance between shading top surface 120a and first surface 110a.
Then, D referring to figure 5. forms the encapsulated layer 150 with insulating property (properties) on temporary support plate 10, and fills in the
One opening 121 is open in 122 with second, to cover light conversion layer 591,592, light shield layer 120 and light emitting diode 530.
Then, E referring to figure 5., removes temporary support plate 10, to expose the second surface 110b of line layer 110.
Then, F referring to figure 5., forms multiple connection gaskets 160, each connection on the second surface 110b of line layer 110
Pad 160 can be by line layer 110 to be electrically connected with corresponding light emitting diode 530.
Then, referring to Fig. 5 G and Fig. 5 H.It as depicted in fig. 5g, can be more to be formed by singulation manufacture craft
A LED package 500 as illustrated in fig. 5h.It is worth noting that, after carrying out singulation manufacture craft, similar member
Part symbol is by the element after being used for singulation.For example, the line layer 110 after singulation is referred to as line layer 110, singulation
Light emitting diode 530 afterwards is referred to as light emitting diode 530, and the light conversion layer 591,592 after singulation is referred to as light conversion layer
591,592, the encapsulated layer 150 after singulation is referred to as encapsulated layer 150, and the connection gasket 160 after singulation is referred to as connection gasket 160
Deng such.Element after other monomers will follow above-mentioned identical component symbol rule, will not be repeated here in this.
H referring to figure 5. can substantially complete the LED package of the present embodiment after above-mentioned manufacture craft
500 production.The LED package 500 of the present embodiment is similar with the LED package 100 in Fig. 1 J to Fig. 1 M, poor
It is different to be: to can have light conversion layer 591,592 on light emitting diode 530.
In conclusion can contribute to miniature luminous two in LED package and its manufacturing method of the invention
The size of pole pipe encapsulation.Also, compared to other display devices with identical screen size, by light-emitting diodes of the invention
Pipe package application can promote the resolution ratio of display device when display device.In addition, LED package of the invention can
To omit substrate, manufacturing cost can also be reduced.In this way, which LED package and its manufacturing method of the invention can be with
With preferable display quality and lower cost.
Although disclosing the present invention in conjunction with above embodiments, it is not intended to limit the invention, any affiliated technology
Have usually intellectual in field, without departing from the spirit and scope of the present invention, can make some changes and embellishment, therefore this hair
Bright protection scope should be subject to what the appended claims were defined.
Claims (10)
1. a kind of LED package characterized by comprising
Line layer, thickness is less than 100 microns；
Light shield layer is located on the line layer, and the light shield layer has multiple openings；
Multiple light emitting diodes are configured on the line layer and are located in the multiple opening of the light shield layer, and described
Multiple light emitting diodes are electrically connected with the line layer；And
Encapsulated layer covers the light shield layer, and the refractive index of the encapsulated layer is between 1.4 to 1.7, the Young of the encapsulated layer
Modulus is greater than or equal to 1GPa, and the thickness of the encapsulated layer is greater than the thickness of the multiple light emitting diode.
2. LED package as described in claim 1, further includes:
Multiple connection gaskets, wherein the multiple connection gasket is located at the not ipsilateral of the line layer with the multiple light emitting diode,
The quantity of the multiple connection gasket be greater than the multiple light emitting diode quantity, and the quantity of the multiple connection gasket with it is described
The difference of the quantity of multiple light emitting diodes is 1.
3. LED package as described in claim 1, further includes:
Multiple light conversion layers, the multiple light emitting diode corresponding to part configure.
4. LED package as described in claim 1, further includes:
Element layer is located on the line layer, and the element layer includes multiple active members, and the multiple active member is electrically connected
It is connected to corresponding the multiple light emitting diode.
5. LED package as claimed in claim 4, wherein the light shield layer coats the element layer.
6. LED package as claimed in claim 4, wherein the multiple opening of the light shield layer exposes part
The element layer.
7. LED package as claimed in claim 4, further includes:
Multiple connection gaskets, wherein the multiple connection gasket is located at the not ipsilateral of the line layer with the multiple light emitting diode,
The quantity of the multiple connection gasket be greater than the multiple light emitting diode quantity, and the quantity of the multiple connection gasket with it is described
The difference of the quantity of multiple light emitting diodes is 3.
8. LED package as described in claim 1, wherein the encapsulated layer is also inserted in the multiple opening.
9. LED package as described in claim 1, wherein the light shield layer has through-hole, and the light emitting diode
Encapsulation further include:
Dielectric layer is inserted in the multiple opening to cover the multiple line layer for being open and being exposed；And
Multiple connection gaskets, wherein the multiple connection gasket is located at the not ipsilateral of the line layer with the multiple light emitting diode；
Penetration electrode layer, on the light shield layer, the multiple light emitting diode and the dielectric layer and filling is described logical
One of hole and the multiple connection gasket are electrically connected to the multiple light emitting diode by the penetration electrode layer.
10. LED package as described in claim 1, wherein the LED package is no substrate package part.
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| Application Number | Priority Date | Filing Date | Title |
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| TW106144959 | 2017-12-21 | ||
| TW106144959A TWI661585B (en) | 2017-12-21 | 2017-12-21 | Light emitting diode package |
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| CN109950380A true CN109950380A (en) | 2019-06-28 |
| CN109950380B CN109950380B (en) | 2021-06-01 |
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| CN110827709A (en) * | 2019-11-26 | 2020-02-21 | 苏州佳世达电通有限公司 | Display module |
| CN111430523A (en) * | 2020-02-24 | 2020-07-17 | 錼创显示科技股份有限公司 | Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device |
| US11810904B2 (en) | 2020-02-24 | 2023-11-07 | PlayNitride Display Co., Ltd. | Micro light emitting diode structure and manufacturing method thereof and micro light emitting diode device |
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| CN112736179B (en) * | 2019-08-06 | 2023-04-07 | 天津三安光电有限公司 | Light-emitting diode, manufacturing process and light-emitting device |
| TWI728577B (en) * | 2019-11-28 | 2021-05-21 | 佳世達科技股份有限公司 | Display module |
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| CN106848043A (en) * | 2017-03-28 | 2017-06-13 | 光创空间（深圳）技术有限公司 | The method for packing and LED component of a kind of LED component |
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| CN111430523A (en) * | 2020-02-24 | 2020-07-17 | 錼创显示科技股份有限公司 | Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device |
| CN111430523B (en) * | 2020-02-24 | 2021-06-01 | 錼创显示科技股份有限公司 | Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI661585B (en) | 2019-06-01 |
| CN109950380B (en) | 2021-06-01 |
| TW201929271A (en) | 2019-07-16 |
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