TWI661585B - Light emitting diode package - Google Patents

Abstract

A light-emitting diode package includes a circuit layer, a light-shielding layer, and a plurality of light-emitting diodes. Diode and packaging layer. The thickness of the circuit layer is less than 100 microns. The light shielding layer is located on the wiring layer. The light shielding layer has a plurality of openings. The light emitting diode is disposed on the circuit layer and located in the opening of the light shielding layer. The light emitting diode is electrically connected to the circuit layer. The encapsulation layer covers the light shielding layer. The refractive index of the encapsulation layer is between 1.4 and 1.7. The Young's modulus of the encapsulation layer is greater than or equal to 1 GPa. The thickness of the encapsulation layer is greater than the thickness of the light emitting diode.

Description

Light emitting diode package

The invention relates to a photovoltaic element structure and a manufacturing method thereof, and in particular to a light emitting diode package and a manufacturing method thereof.

Light emitting diodes (LEDs) have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption, so they have been widely used as indicators or light sources in homes and various devices. In recent years, light-emitting diodes have developed toward multi-color and high brightness, so their application fields have expanded to large outdoor signages, traffic lights, and related fields. In the future, light emitting diodes may even become the main lighting source with both power saving and environmental protection functions.

Generally, in a display device having a light emitting diode, the light emitting diode can be configured on a circuit substrate by using a surface mount device (SMD) technology or a chip on board (COB) technology. However, in the surface mount component technology, the cycle size is not easy due to the limitation of the package size, and the arrangement of the light emitting diodes may cause color deviation or produce color difference at different viewing angles, which affects the display. quality. In addition, in the direct chip packaging technology, the light emitting diode die is directly packaged on a line with a driving element. On the circuit substrate, it is difficult to detect and repair, so the packaging cost is higher. Therefore, how to improve the structure and manufacturing method of the light-emitting diode package to improve the yield and reliability of its products, reduce the manufacturing cost, and have better display quality has become an urgent need. Problem solved.

The invention provides a light emitting diode package and a manufacturing method thereof, which have better display quality and lower cost.

An embodiment of the present invention provides a light emitting diode package, which includes a circuit layer, a light shielding layer, a plurality of light emitting diodes, and a packaging layer. The thickness of the circuit layer is less than 100 micrometers (μm). The light shielding layer is located on the wiring layer. The light shielding layer has a plurality of openings. The light emitting diode is disposed on the circuit layer and located in the opening of the light shielding layer. The light emitting diode is electrically connected to the circuit layer. The encapsulation layer covers the light shielding layer. The refractive index of the encapsulation layer is between 1.4 and 1.7. The Young's modulus of the encapsulation layer is greater than or equal to 1 gigapascal (GPa). The thickness of the encapsulation layer is greater than the thickness of the light emitting diode.

An embodiment of the present invention provides a method for manufacturing a light emitting diode package, which includes the following steps. A circuit layer is formed on the temporary carrier board. The circuit layer has a first surface and a second surface opposite to the first surface, and the second surface faces the temporary carrier board. A light-shielding layer is formed on the first surface of the circuit layer. The light shielding layer has a first opening and a plurality of second openings, wherein the first opening exposes a part of the temporary carrier. A plurality of light emitting diodes are arranged on the circuit layer. The light-emitting diode is located in the opening, and the light-emitting diode is electrically Connected to the line layer. An encapsulation layer is formed on the temporary substrate to cover the light-shielding layer and a plurality of light-emitting diodes. The temporary carrier board is removed to expose the second surface of the wiring layer. A plurality of connection pads are formed on the second surface of the circuit layer. A singulation process is performed to form a plurality of light emitting diode packages.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

100, 200, 300, 400, 500‧‧‧ light-emitting diode packages

100a, 200a‧‧‧ border

10‧‧‧Temporary carrier board

110‧‧‧line layer

110a‧‧‧first surface

110b‧‧‧Second surface

110c‧‧‧ sidewall

120, 220, 320, 420‧‧‧ light-shielding layer

121, 221, 321, 421‧‧‧ first opening

122, 222, 322, 422‧‧‧ Second opening

120a‧‧‧ shading top surface

224‧‧‧ Third opening

530‧‧‧light-emitting diode

131, 231‧‧‧‧First light-emitting diode

132, 232‧‧‧Second light emitting diode

133, 233‧‧‧‧th third light emitting diode

130a, 230a, 530a

141‧‧‧connection terminal

242‧‧‧ conductive adhesive layer

150‧‧‧encapsulation layer

160, 360‧‧‧Connecting pads

161‧‧‧The first connection pad

162‧‧‧Second connection pad

163‧‧‧Third connection pad

164, 364‧‧‧shared pads

365‧‧‧Data Connection Pad

366‧‧‧Scan connection pad

367‧‧‧Power connection pad

270‧‧‧ Dielectric layer

271‧‧‧through electrode layer

380, 480‧‧‧ component layer

591‧‧‧first light conversion layer

592‧‧‧Second light conversion layer

590a‧‧‧ Conversion layer surface

1A to 1J are schematic cross-sectional views of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention.

FIG. 1K is a schematic top view of a light emitting diode package according to a first embodiment of the present invention.

FIG. 1L is a schematic bottom view of a light emitting diode package according to a first embodiment of the present invention.

FIG. 1M is a circuit diagram of a light emitting diode package according to a first embodiment of the present invention.

2A to 2J are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a second embodiment of the present invention.

2K is a schematic top view of a light emitting diode package according to a second embodiment of the present invention.

3A to 3I are a light emitting diode package according to a third embodiment of the present invention A schematic cross-sectional view of a part of the manufacturing method.

3J is a schematic bottom view of a light emitting diode package according to a third embodiment of the present invention.

4A to 4I are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a fourth embodiment of the present invention.

5A to 5H are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a fifth embodiment of the present invention.

1A to 1J are schematic cross-sectional views of a method for manufacturing a light emitting diode package according to a first embodiment of the present invention. FIG. 1K is a schematic top view of a light emitting diode package according to a first embodiment of the present invention. FIG. 1L is a schematic bottom view of a light emitting diode package according to a first embodiment of the present invention. FIG. 1M is a circuit diagram of a light emitting diode package according to a first embodiment of the present invention.

First, referring to FIG. 1A, a temporary carrier board 10 is provided. The material of the temporary carrier board 10 may be glass, quartz, wafer, organic polymer or metal. Other suitable materials can also be used as the temporary carrier board 10 as long as the aforementioned materials can support the film layer or component formed thereon and can withstand subsequent processes, which are not limited in the present invention.

Next, referring to FIG. 1B, a circuit layer 110 is formed on the temporary carrier board 10. The circuit layer 110 has a first surface 110 a and a second surface 110 b opposite to the first surface 110 a, and the second surface 110 b is in contact with the temporary carrier board 10. Specifically, the line layer The manufacturing method of 110 may include the following steps, for example. First, a conductive substance can be formed on the temporary carrier 10 by a deposition process or other suitable processes. Then, a patterning process such as photolithography and etching can be used to pattern the conductive substance on the temporary carrier 10 to form the circuit layer 110. Generally, the thickness of the circuit layer 110 can be less than 100 micrometers by the above-mentioned formation method. However, the present invention does not limit the manner and thickness of the circuit layer 110. In addition, based on considerations of conductivity, the circuit layer 110 is generally made of a metal material, but the present invention is not limited thereto. According to other embodiments, the circuit layer 110 may also use other conductive materials, such as alloys, metal oxides, metal nitrides, metal oxynitrides, graphene, carbon nanotubes, other suitable conductive materials, or the above. A stack of at least two materials.

In some embodiments, before the circuit layer 110 is formed on the temporary carrier board 10, a de-adhesion layer (not shown) may be formed on the temporary carrier board 10. The de-adhesion layer is, for example, light to heat conversion (LTHC). ) A release layer or other suitable material, so that the releaseability between the temporary carrier board 10 and the circuit layer 110 can be improved in a subsequent process.

Next, referring to FIG. 1C, after the circuit layer 110 is formed, a light shielding layer 120 is formed on the circuit layer 110. Generally speaking, the material of the light-shielding layer 120 may be resin, dielectric material, or metal, and the method of forming the light-shielding layer 120 may include an exposure process, a development process, or a coating process to form a plurality of first openings 121 and a plurality of Second opening 122. The first opening 121 and the second opening 122 penetrate the wiring layer 110 to at least expose the temporary carrier board 10. In addition, the second opening 122 further exposes part of the first surface 110 a and the sidewall 110 c of the circuit layer 110. In this embodiment, the first opening 121 For example, it can be a trench, and the trench-shaped first opening 121 can surround a plurality of second openings 122. In the subsequent processes, the trench-shaped first opening 121 can basically define the size of the light emitting diode package 100.

In this embodiment, the first opening 121 exposes the sidewall 110c of the circuit layer 110, but the present invention is not limited thereto. In other embodiments, the light shielding layer 120 may cover the sidewall 110 c of the circuit layer 110 in the first opening 121.

Next, referring to FIG. 1D, a plurality of first light emitting diodes 131 are disposed on the circuit layer 110, and the first light emitting diodes 131 are located in the corresponding second openings 122. The arrangement of the first light emitting diode 131 can be performed by, for example, a mass transfer process, but the present invention is not limited thereto.

Next, referring to FIG. 1E, a plurality of second light emitting diodes 132 and a plurality of third light emitting diodes 133 (shown in FIG. 1K) is disposed on the line layer 110. The first light-emitting diode 131, the second light-emitting diode 132, and the third light-emitting diode 133 are respectively located in different second openings 122.

In this embodiment, the light-emitting diodes 131, 132, and 133 may be light-emitting diodes having a lateral structure, and the light-emitting diodes 131, 132, and 133 may be flip-chip bonding. By way of example, the connection terminal 141 is electrically connected to the corresponding circuit layer 110. The connection terminal 141 is, for example, a solder ball, but the present invention is not limited thereto.

In this embodiment, the light-emitting top surface 130 a of the light-emitting diodes 131, 132, and 133 may be flush with the light-shielding top surface 120 a of the light-shielding layer 120, but the present invention is not limited to this. this. In other embodiments, the light-emitting top surface 130 a of the light-emitting diodes 131, 132, and 133 may be lower than the light-shielding top surface 120 a of the light-shielding layer 120. That is, the distance between the light emitting top surface 130a and the first surface 110a may be smaller than the distance between the light shielding top surface 120a and the first surface 110a.

Next, referring to FIG. 1E and FIG. 1F at the same time, after the light-emitting diodes 131, 132, and 133 (shown in FIG. 1M) are arranged on the circuit layer 110 and electrically connected, a transparent substrate 10 is formed with a transparent substrate. The light-encapsulating layer 150 covers the light-shielding layer 120 and the light-emitting diodes 131, 132, and 133. In addition, the packaging layer 150 may be further filled into the first opening 121 and the second opening 122 of the light shielding layer 120 to cover the temporary carrier board 10 exposed by the first opening 121 and the second opening 122. In this embodiment, the method for forming the encapsulation layer 150 is, for example, forming a transparent encapsulation material on the light-shielding layer 120 and the light-emitting diode by a coating method, an adhesion method, a sol-gel method, or a pressing method. The bodies 131, 132, and 133 are filled with transparent packaging material in the first opening 121 and the second opening 122. Then, a photopolymerization or baking process may be performed according to the properties of the transparent packaging material to cure the transparent packaging material to form a light-transmissive packaging layer 150. The material of the encapsulation layer 150 may be a hydrocarbon polymer material having a chain structure, such as a rubber-based rubber material, an acrylic-based rubber material, or a silicone-based rubber material, but the present invention is not limited thereto. The Young's modulus of the encapsulation layer 150 may be greater than or equal to 1 GPa to reduce the possibility of damage to the light emitting diodes 131, 132, 133 and the circuit layer 110 encapsulated by the encapsulation layer 150. Generally, the refractive index of the encapsulation layer 150 is between 1.4 and 1.7, but the present invention is not limited thereto.

Next, please refer to FIG. 1F and FIG. 1G at the same time. After the encapsulation layer 150 is formed, the temporary carrier board 10 may be removed by a debonding process to expose the second surface 110 b of the circuit layer 110. In other words, the light emitting diode package 100 (shown in FIG. 1J) of this embodiment may be a substrateless package without a substrate.

In this embodiment, the temporary carrier board 10 can be mechanically removed from the second surface 110b of the circuit layer 110, but the present invention is not limited thereto. Taking the embodiment in which the debonding layer is temporarily provided between the substrate 10 and the circuit layer 110 as an example, thermal energy or light energy (for example, heating or ultraviolet light (UV light) irradiation) can be applied to the debonding layer. In this way, the de-adhesion layer can lose its adhesiveness, and the temporary carrier board 10 can be easily peeled from the second surface 110 b of the circuit layer 110.

1H, a plurality of connection pads 160 are formed on the second surface 110b of the circuit layer 110. Each connection pad 160 can be electrically connected to the corresponding light-emitting diodes 131, 132, and 133 through the circuit layer 110. . Specifically, the manufacturing method of the connection pad 160 may include, for example, the following steps. First, a conductive substance may be formed on the second surface 110 b of the circuit layer 110 by a deposition process or other suitable processes. Then, a patterning process such as photolithography and etching can be used to pattern the conductive material on the second surface 110b to form the connection pad 160. However, the present invention does not limit the manner of forming the connection pad 160. In addition, based on considerations of electrical conductivity, the connection pad 160 is generally made of a metal material, but the present invention is not limited thereto. According to other embodiments, the connection pad 160 may also use other conductive materials, including, for example, alloys, metal oxides, metal nitrides, metal oxynitrides, graphene, naphthalene Rice carbon tubes, other suitable conductive materials, or stacked layers of at least two of the above materials. In addition, in some embodiments, the connection pad 160 may further have a plating layer plated with a metal layer or an alloy layer such as nickel, palladium, gold, etc., so as to improve the bonding force between the connection pad 160 and other film layers or components.

Please refer to FIG. 1I and FIG. 1J at the same time. As shown in FIG. 1I, a plurality of light emitting diode packages 100 as shown in FIG. 1J may be formed by a singulation process. For example, a water jet cutter technology, a laser cutting technology, or a mechanical cutting technology can be used to remove the encapsulation layer 150 in the first opening 121 to form a plurality of layers. 100 light emitting diode packages 100. It is worth noting that after the singulation process, similar component symbols will be used for the singulated components. For example, the singulated circuit layer 110 is referred to as a circuit layer 110, and the singulated light-emitting diodes 131, 132, and 133 are referred to as luminescent diodes 131, 132, and 133. The encapsulation layer 150 is referred to as the encapsulation layer 150, the singulated connection pad 160 is referred to as a connection pad 160, and the like. Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

Please refer to FIG. 1J to FIG. 1M at the same time. After the above processes, the fabrication of the light emitting diode package 100 of this embodiment can be substantially completed. It is worth noting that, for simplicity and simplicity, FIG. 1K only illustrates the light-emitting diodes 131, 132, 133 and the light-shielding layer 120. Moreover, FIG. 1L only illustrates the positional relationship between the plurality of connection pads 160, but the positional relationship between the plurality of connection pads 160 can be adjusted according to the needs of the circuit design, and is not limited in the present invention.

The light-emitting diode package 100 described above may include a circuit layer 110, a light-shielding layer 120, a plurality of light-emitting diodes 131, 132, and 133, a packaging layer 150, and a plurality of connection pads 160. The circuit layer 110 has a first surface 110a and a second surface 110b opposite to the first surface 110a. The thickness of the circuit layer 110 is less than 100 micrometers. The light shielding layer 120 is located on the first surface 110 a of the wiring layer 110. The light shielding layer 120 has a plurality of openings. The light emitting diodes 131, 132, and 133 are disposed on the first surface 110 a of the circuit layer 110 and are located in the openings of the light shielding layer 120. The light emitting diodes 131, 132, and 133 are electrically connected to the circuit layer 110. The encapsulation layer 150 covers the light shielding layer 120 and the light emitting diodes 131, 132, and 133. The refractive index of the encapsulation layer 150 is between 1.4 and 1.7. The Young's modulus of the encapsulation layer 150 is greater than or equal to 1 GPa. The thickness of the encapsulation layer 150 is greater than the thickness of the light emitting diodes 131, 132, and 133. The plurality of connection pads 160 are located on the second surface 110 b of the circuit layer 110. The number of the connection pads 160 is greater than the number of the light-emitting diodes 131, 132, and 133.

In this embodiment, the encapsulation layer 150 is an insulating material, and the encapsulation layer 150 is further filled into the second opening 122 (shown in FIG. 1F) configured with the light emitting diodes 131, 132, and 133 to further cover the opening exposed.出 的 线 层 110。 The line layer 110.

In this embodiment, the difference between the number of the connection pads 160 and the number of the light-emitting diodes 131, 132, and 133 is one. Taking the embodiment shown in FIGS. 1J to 1M as an example, the plurality of light-emitting diodes 131, 132, and 133 include a first light-emitting diode 131, a second light-emitting diode 132, and a third light-emitting diode 133. The plurality of connection pads 160 include a first connection pad 161, a second connection pad 162, a third connection pad 163, and a common connection pad 164. The first connection pad 161 is electrically connected to a cathode of the first light emitting diode 131. First The two connection pads 162 are electrically connected to the cathode of the second light emitting diode 132. The third connection pad 163 is electrically connected to the cathode of the third light emitting diode 133. In addition, the common pad 164 is electrically connected to the anode of the first light-emitting diode 131, the anode of the second light-emitting diode 132, and the anode of the third light-emitting diode 133. That is, in this embodiment, the plurality of light emitting diodes 131, 132, and 133 are configured by using a common anode, but the present invention is not limited thereto. In other feasible embodiments, the plurality of light emitting diodes 131, 132, and 133 are configured by using a common cathode, which is not limited in the present invention.

In this embodiment, the first light-emitting diode 131, the second light-emitting diode 132, and the third light-emitting diode 133 can respectively emit light of different colors, and the first light-emitting diode 131 and the second light-emitting diode 131 The polar body 132 and the third light-emitting diode 133 may be arranged in a delta staggered arrangement (Delta). In this way, the shortest distance between each of the light-emitting diodes 131, 132, 133 and the boundary 100a of the light-emitting diode package 100 does not have a large gap, so that the display quality can be improved.

2A to 2J are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a second embodiment of the present invention. 2K is a schematic top view of a light emitting diode package according to a second embodiment of the present invention. In this embodiment, the manufacturing method of the light emitting diode package 200 is similar to the manufacturing method of the light emitting diode package 100. Similar components are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and are omitted. description. Specifically, FIG. 2A to FIG. 2J are schematic cross-sectional views illustrating a method for manufacturing a light emitting diode package following the step in FIG. 1B.

Continue from FIG. 1B, please refer to FIG. 2A. In this embodiment, a circuit layer is formed. After 110, a light-shielding layer 220 is formed on the temporary substrate 10. The light shielding layer 220 has a first opening 221, a second opening 222, and a third opening 224 (shown in FIG. 2K). The first opening 221 and the second opening 222 penetrate the circuit layer 110 to at least expose the temporary carrier board 10. The third opening 224 is a through hole penetrating through the light shielding layer 220 to expose the temporary carrier board 10 that is not covered by the circuit layer 110. In addition, the second opening 222 may further expose part of the first surface 110 a and the sidewall 110 c of the circuit layer 110. In this embodiment, the first opening 221 may be, for example, a trench, and the trench-shaped first opening 221 may surround the plurality of second openings 222. In a subsequent process, the trench-shaped first opening 221 may basically be The size of the light emitting diode package 200 is defined.

In this embodiment, the first opening 221 exposes the sidewall 110c of the circuit layer 110, but the present invention is not limited thereto. In other embodiments, the light shielding layer 220 may cover the sidewall 110 c of the circuit layer 110 in the first opening 221.

In this embodiment, a material or a forming method of the light shielding layer 220 may be similar to a material or a forming method of the light shielding layer 120 in the foregoing embodiment, but the present invention is not limited thereto.

Next, referring to FIG. 2B, a plurality of first light emitting diodes 231 are disposed on the circuit layer 110, and the first light emitting diodes 231 are located in the corresponding second openings 222. In this embodiment, the configuration of the first light-emitting diode 231 may be similar to the configuration of the first light-emitting diode 131 of the foregoing embodiment, so it is not described herein.

Then, referring to FIG. 2C, a plurality of second light-emitting diodes 232 and a plurality of third light-emitting diodes can be sequentially arranged in a similar manner to the first light-emitting diode 231. The polar body 233 (shown in FIG. 2K) is disposed on the circuit layer 110. The first light-emitting diode 231, the second light-emitting diode 232, and the third light-emitting diode 233 are respectively located in different second openings 222.

In this embodiment, the light-emitting diodes 231, 232, and 233 may be light-emitting diodes having a vertical structure, so that the light-emitting diodes 231, 232, and 233 are electrically connected to the corresponding circuit layer 110. In some embodiments, the light-emitting diodes 231, 232, 233 and the circuit layer 110 may have a conductive adhesive layer 242. The conductive adhesive layer 242 is, for example, a solder pad or a conductive adhesive film (CF), but the present invention Not limited to this.

Next, referring to FIG. 2D, a dielectric layer 270 is formed on the temporary substrate 10. In this embodiment, the method for forming the dielectric layer 270 is, for example, coating the dielectric material into the second opening 222 by a coating method, a tack method, a Sol-Gel method, or a compression method. Then, a photopolymerization or baking process may be performed according to the properties of the dielectric material, and the dielectric material is cured to form a dielectric layer 270, so that at least the light emitting diodes 231, 232, and 233 and the circuit layer are formed. The electrical connection points between 110 are enclosed to avoid contact with the foregoing electrical connection points and other conductive film layers. The material of the dielectric layer 270 may be a hydrocarbon polymer material having a chain structure, such as a rubber-based rubber material, an acrylic-based rubber material, or a silicone-based rubber material, but the present invention is not limited thereto.

2E, a transmissive electrode layer 271 is formed. The transmissive electrode layer 271 covers the light emitting top surface 230a of the light emitting diodes 231, 232, and 233 and the light shielding layer 220 between the light emitting diodes 231, 232, and 233, and further fills the light shielding layer 220. Inside the third opening 224. That is, the plurality of light emitting diodes 231, 232, and 233 may be electrically connected to each other through the transmissive electrode layer 271. The material of the transmissive electrode layer 271 includes a metal oxide, such as zinc oxide (ZnO), tin oxide (SnO), indium-zinc oxide (IZO), and gallium-zinc oxide (GZO). , Zinc-Tin Oxide (ZTO) or Indium-Tin Oxide (ITO), or other suitable oxides, or a stacked layer of at least two of the above, but the present invention is not limited thereto.

2F, a light-transmitting packaging layer 150 is formed on the temporary carrier board 10 and filled in the first opening 221 to cover the light-shielding layer 220 and the transmissive electrode layer 271 on the circuit layer 110. .

Next, referring to FIG. 2G, the temporary carrier board 10 is removed to expose the second surface 110 b of the circuit layer 110.

2H, a plurality of connection pads 160 are formed on the second surface 110b of the circuit layer 110. Each connection pad 160 can be electrically connected to the corresponding light-emitting diodes 231, 232, and 233 through the circuit layer 110. .

Please refer to FIG. 2I and FIG. 2J at the same time. As shown in FIG. 2I, a plurality of light emitting diode packages 200 as shown in FIG. 2J can be formed by a singulation process. It is worth noting that after the singulation process, similar component symbols will be used for the singulated components. For example, the singulated circuit layer 110 is referred to as a circuit layer 110, and the singulated light-emitting diodes 231, 232, and 233 are referred to as luminescent diodes 231, 232, and 233. The dielectric layer 270 is called a dielectric layer 270, and the singulated transmissive electrode layer 271 is referred to as a transmissive electrode layer 271. The singulated packaging layer 150 is referred to as the packaging layer 150, the singulated connection pad 160 is referred to as the connection pad 160, and the like. Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

Please refer to FIG. 2J to FIG. 2K at the same time. After the above processes, the fabrication of the light-emitting diode package 200 of this embodiment can be substantially completed. It should be noted that, for simplicity and simplicity, FIG. 2K only illustrates the light-emitting diodes 231, 232, and 233, the light-shielding layer 220, the third opening 224 of the light-shielding layer 220, and the transmissive electrode layer 271. The transmissive electrode layer 271 covers the light-emitting diodes 231, 232, and 233 and the light-shielding layer 220, and fills the third opening 224 of the light-shielding layer 220.

The light-emitting diode package 200 of this embodiment is similar to the light-emitting diode package 100 in FIGS. 1J to 1M, except that the light-emitting diodes 231, 232, and 233 may be light-emitting diodes having a vertical structure. The transmissive electrode layer 271 covers the light-emitting top surfaces 230a of the plurality of light-emitting diodes 231, 232, and 233 and fills the third opening 224 of the light-shielding layer 220 so that the plurality of light-emitting diodes 231, 232, 233 is electrically connected to the common pad 164 through the transmissive electrode layer 271.

Similar to the plurality of light emitting diodes 131, 132, and 133 in the light emitting diode package 100, in this embodiment, the plurality of light emitting diodes 231, 232, and 233 may be configured by using a common anode. The invention is not limited to this. In other feasible embodiments, the plurality of light emitting diodes 231, 232, and 233 are configured by using a common cathode, which is not limited in the present invention.

In this embodiment, the first light-emitting diode 231, the second light-emitting diode 232, and the third light-emitting diode 233 can respectively emit light of different colors, and the first The light-emitting diodes 231, the second light-emitting diodes 232, and the third light-emitting diodes 233 may be arranged in a triangular staggered arrangement. In this way, the shortest distance between each of the light-emitting diodes 231, 232, and 233 and the boundary 200a of the light-emitting diode package 200 does not have a large gap, so that the display quality can be improved.

3A to 3I are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a third embodiment of the present invention. 3J is a schematic bottom view of a light emitting diode package according to a third embodiment of the present invention. In this embodiment, the manufacturing method of the light emitting diode package 300 is similar to the manufacturing methods of the light emitting diode packages 100 and 200. Similar components are represented by the same reference numerals and have similar functions, materials, or formation methods. And description is omitted. Specifically, FIGS. 3A to 3I are schematic cross-sectional views illustrating a method for manufacturing a light emitting diode package subsequent to the step in FIG. 1B.

Continuing FIG. 1B, please refer to FIG. 3A. In this embodiment, after the circuit layer 110 is formed, an element layer 380 is formed on the circuit layer 110 and is electrically connected to the circuit layer 110. The element layer 380 may include a plurality of driving circuit units composed of active elements and wires. The active element is, for example, a transistor, and the conductive line is, for example, a scanning line and a data line that are electrically separated from each other, but the present invention is not limited thereto. In addition, according to the requirements of the layout, the element layer 380 may also include capacitors, resistors, or other similar passive components for adjusting the voltage, current, or delay of the electronic signal. The aforementioned wires, active components, passive components, or other electronic components located in the component layer 380 may be formed by a general semiconductor manufacturing process, and are not described herein.

3B, after the element layer 380 is formed, a light shielding layer 320 is formed on the circuit layer 110 to cover the element layer 380 on the circuit layer 110. And cover part of the circuit layer 110. The light shielding layer 320 has a plurality of first openings 321 and a plurality of second openings 322. The first opening 321 and the second opening 322 penetrate the wiring layer 110 to at least expose the temporary carrier board 10. In addition, the second opening 322 further exposes part of the first surface 110 a and the sidewall 110 c of the circuit layer 110. In this embodiment, the first opening 321 may be, for example, a trench, and the trench-shaped first opening 321 may surround a plurality of second openings 322. In a subsequent process, the trench-shaped first opening 321 may basically be The size of the light emitting diode package 300 is defined.

In this embodiment, the first opening 321 exposes the sidewall 110c of the circuit layer 310, but the present invention is not limited thereto. In other embodiments, the light shielding layer 320 may cover the sidewall 110 c of the circuit layer 110 in the first opening 321.

In this embodiment, a material or a forming method of the light shielding layer 320 may be similar to a material or a forming method of the light shielding layer 120 in the foregoing embodiment, but the present invention is not limited thereto.

Next, referring to FIG. 3C, a plurality of first light emitting diodes 131 are disposed on the circuit layer 110, and the first light emitting diodes 131 are located in the corresponding second openings 322. In this embodiment, the configuration of the first light-emitting diode 131 may be similar to the configuration of the first light-emitting diode 131 of the foregoing embodiment, so it is not described herein.

Next, referring to FIG. 3D, a plurality of second light emitting diodes 132 and a plurality of third light emitting diodes 133 can be sequentially arranged in a similar manner to the first light emitting diode 131 (as shown in FIG. 1K). (Illustrated) disposed on the circuit layer 110. The first light-emitting diode 131, the second light-emitting diode 132, and the third light-emitting diode 133 are respectively located at different positions. Inside the second opening 322.

In this embodiment, the light-emitting diodes 131, 132, and 133 may be light-emitting diodes having a lateral structure, and the light-emitting diodes 131, 132, and 133 may be flip-chip bonded to each other through the connection terminal 141. It is electrically connected to the corresponding circuit layer 110 and is electrically connected to the element layer 380.

Next, referring to FIG. 3D and FIG. 3E at the same time, after the light-emitting diodes 131, 132, and 133 are disposed on the circuit layer 110 and electrically connected, a packaging layer 150 having an insulating property is formed on the temporary carrier board 10, Filled in the first opening 321 and the second opening 322 to cover the light-shielding layer 320 and the light-emitting diodes 131, 132, and 133.

Next, please refer to FIG. 3E and FIG. 3F at the same time. After the packaging layer 150 is formed, the temporary carrier board 10 is removed to expose the second surface 110 b of the circuit layer 110.

Next, referring to FIG. 3G, a plurality of connection pads 360 are formed on the second surface 110b of the circuit layer 110. Each connection pad 360 can use the circuit layer 110 to correspond to the corresponding light emitting diodes 131, 132, 133 and the element layer. 380 electrical connection. The material or the formation method of the connection pad 360 may be similar to the material or the formation method of the connection pad 160 in the foregoing embodiment (steps shown in FIG. 1H), and therefore will not be repeated here.

Next, please refer to FIG. 3H and FIG. 3I at the same time. As shown in FIG. 3H, a plurality of light emitting diode packages 300 as shown in FIG. 3I can be formed by a singulation process. It is worth noting that after the singulation process, similar component symbols will be used for the singulated components. For example, the singulated circuit layer 110 is referred to as a circuit layer 110, the singulated element layer 380 is referred to as an element layer 380, and the singulated light shielding layer 320 is referred to as a light shielding layer 320. Corpuscle 131, 132, and 133 are referred to as light-emitting diodes 131, 132, and 133, the encapsulation layer 150 after singulation is referred to as the encapsulation layer 150, the connection pad 360 after singulation is referred to as the connection pad 360, and the like . Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

Please refer to FIG. 3I at the same time. After the above process, the fabrication of the light emitting diode package 300 of this embodiment can be substantially completed. It is worth noting that, for simplicity, FIG. 3J only illustrates the positional relationship between the plurality of connection pads 360, but the positional relationship between the plurality of connection pads 360 can be adjusted according to the needs of the line design. It is not limited in the present invention.

The light-emitting diode package 300 of this embodiment is similar to the light-emitting diode package 100 in FIGS. 1J to 1M, except that the light-emitting diode package 300 further includes an element layer 380, and the number of connection pads 360 and the light-emitting diode package 300 are the same. The difference between the number of polar bodies 131, 132, and 133 is three.

In this embodiment, the element layer 380 includes multiple active devices (not shown), scan lines (not shown), multiple data lines (not shown), power lines (not shown), and ground lines (not shown). (Illustrated), and the plurality of connection pads 360 include a plurality of data connection pads 365, a scan connection pad 366, a power connection pad 367, and a common connection pad 364. Those skilled in the art can complete the circuit configuration, and will not repeat them here. The number of data connection pads 365 is the same as the number of light-emitting diodes 131, 132, and 133.

4A to 4I are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a fourth embodiment of the present invention. In this embodiment, the manufacturing method of the light emitting diode package 400 is similar to the manufacturing method of the light emitting diode package 100. Similar components are indicated by the same reference numerals, and have similar functions, materials, or formation methods, and descriptions are omitted. Specifically, FIG. 4A to FIG. 4I are schematic cross-sectional views illustrating a method for manufacturing a light emitting diode package following the step in FIG. 1B.

Continuing FIG. 1B, please refer to FIG. 4A. In this embodiment, after the circuit layer 110 is formed, an element layer 480 is formed on the circuit layer 110 and is electrically connected to the circuit layer 110. In this embodiment, the configuration of the element layer 480 may be similar to the configuration of the element layer 380 of the previous embodiment, with the difference that the element layer 480 completely covers the first surface 110a of the circuit layer 110, and the element layer 480 may be exposed A portion of the carrier board 10 that is not covered by the circuit layer 110 is temporarily.

4B, after the element layer 480 is formed, a light-shielding layer 420 is formed on the element layer 480. The light shielding layer 420 has a plurality of first openings 421 and a plurality of second openings 422. The first opening 421 exposes a portion of the temporary carrier board 10 that is not covered by the element layer 480 and the circuit layer 110, and the second opening 422 exposes a portion of the element layer 480. In this embodiment, the first opening 421 may be, for example, a trench, and the trench-shaped first opening 421 may surround a plurality of second openings 422. In a subsequent process, the trench-shaped first opening 421 may basically be The size of the light emitting diode package 400 is defined.

In this embodiment, the first opening 421 exposes the sidewall 110c of the circuit layer 110, but the present invention is not limited thereto. In other embodiments, the light shielding layer 420 may cover the sidewall 110 c of the circuit layer 110 in the first opening 421.

In this embodiment, a material or a forming method of the light shielding layer 420 may be similar to a material or a forming method of the light shielding layer 120 in the foregoing embodiment, but the present invention is not limited thereto. herein.

4C, a plurality of first light emitting diodes 131 are disposed on the element layer 480, and the first light emitting diodes 131 are located in the corresponding second openings 422.

Next, referring to FIG. 4D, a plurality of second light emitting diodes 132 and a plurality of third light emitting diodes 133 can be sequentially arranged in a similar manner to the first light emitting diode 131 (as shown in FIG. 1K). (Illustrated) disposed on the element layer 480. The first light-emitting diode 131, the second light-emitting diode 132, and the third light-emitting diode 133 are respectively located in different second openings 422.

In this embodiment, the light-emitting diodes 131, 132, and 133 may be light-emitting diodes having a lateral structure, and the light-emitting diodes 131, 132, and 133 may be flip-chip bonded to each other through the connection terminal 141. It is electrically connected to the corresponding element layer 480 and is electrically connected to the circuit layer 110.

Next, referring to FIG. 4D and FIG. 4E, after the light emitting diodes 131, 132, and 133 are arranged on the circuit layer 110 and electrically connected, a packaging layer 150 having an insulating property is formed on the temporary carrier board 10, and filled with Entered into the first opening 421 and the second opening 422 to cover the light-shielding layer 420 and the light-emitting diodes 131, 132, and 133.

Next, referring to FIG. 4E and FIG. 4F at the same time, after the encapsulation layer 150 is formed, the temporary carrier board 10 is removed to expose the second surface 110 b of the circuit layer 110.

Next, referring to FIG. 4G, a plurality of connection pads 360 are formed on the second surface 110b of the circuit layer 110. Each connection pad 360 can use the circuit layer 110 to correspond to the corresponding light-emitting diodes 131, 132, 133 and the element layer 480 electrical connection.

Please refer to FIG. 4H and FIG. 4I at the same time. As shown in FIG. 4H, a plurality of light emitting diode packages 400 as shown in FIG. 4I can be formed by a singulation process. It is worth noting that after the singulation process, similar component symbols will be used for the singulated components. For example, the singulated circuit layer 110 is referred to as a circuit layer 110, the singulated element layer 480 is referred to as an element layer 480, and the singulated light-shielding layer 420 is referred to as a light-shielding layer 420. The integrated light-emitting diodes 131, 132, and 133 are referred to as light-emitting diodes 131, 132, and 133, and the encapsulation layer 150 after the singulation is referred to as the encapsulation layer 150. The singulated connection pad 360 is It is called connection pad 360 and the like. Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

Please refer to FIG. 3I to FIG. 3J at the same time. After the above processes, the fabrication of the light emitting diode package 400 of this embodiment can be substantially completed. The light-emitting diode package 400 of this embodiment is similar to the light-emitting diode package 300 in FIGS. 3I to 3J, except that the element layer 480 is located between the light-emitting diodes 131, 132, and 133 and the circuit layer 110, and The light emitting diodes 131, 132, and 133 are electrically connected to the circuit layer 110 through the element layer 480.

5A to 5H are schematic cross-sectional views of a part of a method for manufacturing a light emitting diode package according to a fifth embodiment of the present invention. In this embodiment, the manufacturing method of the light emitting diode package 500 is similar to the manufacturing method of the light emitting diode package 100, and similar components are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and are omitted. description. Specifically, FIGS. 5A to 5H are schematic cross-sectional views illustrating a method for manufacturing a light emitting diode package following the step in FIG. 1C.

Continuing FIG. 1C, please refer to FIG. 5A. In this embodiment, after the light-shielding layer 120 is formed, a plurality of light-emitting diodes 530 are disposed on the circuit layer 110, and these light-emitting diodes 530 are respectively located at corresponding second layers. Inside the opening 122. In this embodiment, the configuration of the light-emitting diodes 530 may be similar to the configuration of the light-emitting diodes 131, 132, and 133 in the previous embodiment, with the difference that these light-emitting diodes 530 may emit light of the same color, respectively. The light-emitting top surface 530 a of the light-emitting diode 530 is lower than the light-shielding top surface 120 a of the light-shielding layer 120. That is, the distance between the light emitting top surface 530a and the first surface 110a is smaller than the distance between the light shielding top surface 120a and the first surface 110a.

In this embodiment, the light-emitting diode 530 may be a light-emitting diode with a lateral structure, and the light-emitting diode 530 may be flip-chip bonded so as to be electrically connected to the corresponding circuit layer 110 through the connection terminal 141. For connection, the connection terminal 141 is, for example, a solder ball, but the present invention is not limited thereto.

5B, a first light conversion layer 591 is formed on a part of the light-emitting diode 530.

5C, a second light conversion layer 592 is formed on the other light emitting diodes 530.

In this embodiment, the first light conversion layer 591 and / or the second light conversion layer 592 are, for example, quantum dots or phosphor materials, but the present invention is not limited thereto. As long as the light-emitting diode 530 has a single light-emitting color, the light-emitting diodes of three different colors can be displayed by converting the single light-emitting color by the first light conversion layer 591 and / or the second light conversion layer 592. Any combination of the body 530 / light conversion layer is possible. For example, in this real In the embodiment, the light emitting diode 530 can emit blue light, and the first light conversion layer 591 located on the part of the light emitting diode 530 can absorb blue light and emit red light, and the second light on the part of the light emitting diode 530 The conversion layer 592 can absorb blue light and emit green light.

In other embodiments, a third light conversion layer (not shown) may also be provided, and the third light conversion layer may be located on a part of the light emitting diode 530. For example, the light-emitting diode 530 can emit near-UV light, and the first light conversion layer 591 located on part of the light-emitting diode 530 can absorb near-ultraviolet light and emit red light, and the other part emits light. The second light conversion layer 592 on the diode 530 can absorb near-ultraviolet light and emit green light, and the third light conversion layer on the other part of the light-emitting diode 530 can absorb near-ultraviolet light and emit blue light.

In this embodiment, the top surface 590a of the conversion layer of the light conversion layers 591 and 592 may be flush with the light-shielding top surface 120a of the light-shielding layer 120, but the present invention is not limited thereto. In other embodiments, the top surface 590 a of the conversion layer of the light conversion layers 591 and 592 may be lower than the top surface 120 a of the light shielding layer 120. That is, the distance between the top surface of the conversion layer and the first surface 110a may be smaller than the distance between the light-shielding top surface 120a and the first surface 110a.

Next, referring to FIG. 5D, an insulating packaging layer 150 having an insulating property is formed on the temporary carrier board 10 and filled in the first opening 121 and the second opening 122 to cover the light conversion layers 591 and 592, the light-shielding layer 120, and Light emitting diode 530.

Next, referring to FIG. 5E, the temporary carrier board 10 is removed to expose the second surface 110 b of the circuit layer 110.

5F, a shape is formed on the second surface 110b of the circuit layer 110. A plurality of connection pads 160 are formed, and each connection pad 160 can be electrically connected to the corresponding light emitting diode 530 through the circuit layer 110.

5G and 5H. As shown in FIG. 5G, a plurality of light emitting diode packages 500 as shown in FIG. 5H can be formed by a singulation process. It is worth noting that after the singulation process, similar component symbols will be used for the singulated components. For example, the singulated circuit layer 110 is referred to as a circuit layer 110, the singulated light emitting diode 530 is referred to as a luminescent diode 530, and the singulated light conversion layers 591 and 592 are They are referred to as light conversion layers 591 and 592, the encapsulation layer 150 after singulation is referred to as the encapsulation layer 150, the connection pad 160 after singulation is referred to as the connection pad 160, and the like. Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

Referring to FIG. 5H, after the above process, the fabrication of the light emitting diode package 500 of this embodiment can be substantially completed. The light-emitting diode package 500 of this embodiment is similar to the light-emitting diode package 100 in FIGS. 1J to 1M, except that the light-emitting diode 530 may have light conversion layers 591 and 592.

In summary, in the light emitting diode package and the manufacturing method thereof of the present invention, the size of the light emitting diode package can be reduced. In addition, compared with other display devices having the same display screen size, when the light-emitting diode package of the present invention is applied to a display device, the resolution of the display device can be improved. In addition, the substrate of the light emitting diode package of the present invention can be omitted, and the manufacturing cost can be reduced. In this way, the light emitting diode package and the manufacturing method thereof of the present invention can have better display quality and lower cost.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (9)

A light-emitting diode package includes: a circuit layer having a thickness of less than 100 microns; a light-shielding layer on the circuit layer and the light-shielding layer having a plurality of openings; a plurality of light-emitting diodes disposed on the circuit layer Is located above the plurality of openings of the light shielding layer, and the plurality of light emitting diodes are electrically connected to the circuit layer; and a packaging layer covers the light shielding layer, and the refractive index of the packaging layer is Between 1.4 and 1.7, the Young's modulus of the encapsulation layer is greater than or equal to 1 GPa, and the thickness of the encapsulation layer is greater than the thickness of the plurality of light emitting diodes, wherein the light emitting diode package is No substrate package. The light-emitting diode package according to item 1 of the patent application scope further includes: a plurality of connection pads, wherein the plurality of connection pads and the plurality of light-emitting diodes are located on different sides of the circuit layer, so The number of the plurality of connection pads is greater than the number of the plurality of light emitting diodes, and a difference between the number of the plurality of connection pads and the number of the plurality of light emitting diodes is one. The light-emitting diode package according to item 1 of the patent application scope further includes: a plurality of light conversion layers, corresponding to a portion of the plurality of light-emitting diode configurations. The light-emitting diode package according to item 1 of the patent application scope further includes: an element layer on the circuit layer, the element layer includes a plurality of active elements, and the plurality of active elements are electrically connected to The corresponding plurality of light emitting diodes. The light-emitting diode package according to item 4 of the scope of patent application, wherein the light-shielding layer covers the element layer. The light emitting diode package according to item 4 of the scope of patent application, wherein the plurality of openings of the light shielding layer expose a part of the element layer. The light emitting diode package according to item 4 of the scope of patent application, further comprising: a plurality of connection pads, wherein the plurality of connection pads and the plurality of light emitting diodes are located on different sides of the circuit layer. The number of the plurality of connection pads is greater than the number of the plurality of light emitting diodes, and a difference between the number of the plurality of connection pads and the number of the plurality of light emitting diodes is three. The light-emitting diode package according to item 1 of the patent application scope, wherein the packaging layer is further filled into the plurality of openings. The light-emitting diode package according to item 1 of the patent application scope, wherein the light-shielding layer has a through hole, and the light-emitting diode package further includes a dielectric layer filled in the plurality of openings to cover The circuit layer exposed by the plurality of openings; a plurality of connection pads, wherein the plurality of connection pads and the plurality of light emitting diodes are located on different sides of the circuit layer; and a penetrating electrode layer Is located on the light-shielding layer, the plurality of light-emitting diodes, and the dielectric layer and fills the through hole, wherein one of the plurality of connection pads passes through the transmissive electrode layer And electrically connected to the plurality of light emitting diodes.