JP5737083B2 - LED light source device - Google Patents

LED light source device Download PDF

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JP5737083B2
JP5737083B2 JP2011191305A JP2011191305A JP5737083B2 JP 5737083 B2 JP5737083 B2 JP 5737083B2 JP 2011191305 A JP2011191305 A JP 2011191305A JP 2011191305 A JP2011191305 A JP 2011191305A JP 5737083 B2 JP5737083 B2 JP 5737083B2
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metal film
led chip
frame
substrate
shaped metal
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JP2013055172A (en
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亮平 高木
亮平 高木
中島　敏博
敏博 中島
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Ushio Denki KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Description

本発明は、ＬＥＤチップが実装された基板の表面に当該ＬＥＤチップを覆うよう透光性樹脂層が形成されてなるＬＥＤ光源装置に関するものである。   The present invention relates to an LED light source device in which a translucent resin layer is formed on a surface of a substrate on which an LED chip is mounted so as to cover the LED chip.

ＬＥＤ光源装置は、白熱電球や、蛍光灯等の放電ランプなどの他の光源に比較して、消費電力が小さく、しかも、使用寿命が長いことから、種々の分野において利用され始めている。そして、ＬＥＤ光源装置としては、給電用配線を有する基板上に実装されたＬＥＤチップを保護するために、当該ＬＥＤチップが略半球状の透光性樹脂層によって封止されてなるものが知られている（特許文献１参照。）。
このＬＥＤ光源装置における透光性樹脂層は、ＬＥＤチップが実装された基板の表面に、液状の熱硬化型または光硬化型の硬化性樹脂によるポッティング加工を施すことによって形成されている。具体的には、基板の表面に、液状の熱硬化型または光硬化型の硬化性樹脂を滴下することにより、ＬＥＤチップを覆う略半球状の液滴よりなる硬化性樹脂層を形成した後、加熱処理または光照射処理によって硬化性樹脂層層を硬化させることにより、基板の表面に透光性樹脂層が形成される。 LED light source devices are starting to be used in various fields because they consume less power and have a longer service life than other light sources such as incandescent bulbs and discharge lamps such as fluorescent lamps. And as an LED light source device, in order to protect the LED chip mounted on the board | substrate which has the wiring for electric power feeding, what the said LED chip is sealed with the substantially hemispherical translucent resin layer is known. (See Patent Document 1).
The translucent resin layer in this LED light source device is formed by subjecting the surface of the substrate on which the LED chip is mounted to a potting process using a liquid thermosetting or photocurable curable resin. Specifically, after forming a curable resin layer composed of substantially hemispherical droplets covering the LED chip by dropping a liquid thermosetting or photocurable curable resin on the surface of the substrate, By curing the curable resin layer layer by heat treatment or light irradiation treatment, a translucent resin layer is formed on the surface of the substrate.

しかしながら、このようなＬＥＤ光源装置においては、透光性樹脂層を形成する際に、ポッティング加工における精度上の問題により、透光性樹脂層の中心位置がＬＥＤチップの中心位置から位置ずれしたり、液状の硬化性樹脂が過度に流延することによって、略半球状の透光性樹脂層が形成されなかったりするため、得られるＬＥＤ光源装置において、ＬＥＤチップからの光の取り出し効率が低下する、という問題がある。   However, in such an LED light source device, when the translucent resin layer is formed, the center position of the translucent resin layer is displaced from the center position of the LED chip due to a problem in accuracy in potting. When the liquid curable resin is excessively cast, a substantially hemispherical translucent resin layer may not be formed. Therefore, in the obtained LED light source device, the light extraction efficiency from the LED chip is reduced. There is a problem.

このような問題を解決するため、ＬＥＤチップが実装された基板の表面に、樹脂層成型用枠部材を配置した後、ポッティング加工を施すことによって透光性樹脂層を形成する方法が提案されている（特許文献２参照。）。
然るに、このような方法によって透光性樹脂層を形成する場合には、ポッティング加工を施す前において、樹脂層成型用枠部材を基板に対して位置合わせして配置する作業を行うと共に、ポッティング加工を施した後において、樹脂層成型用枠部材を基板から取り外す作業を行うことが必要であるため、製造工程が煩雑となり、その結果、生産効率が低下する、という問題がある。 In order to solve such problems, a method of forming a translucent resin layer by placing a resin layer molding frame member on the surface of a substrate on which an LED chip is mounted and then performing potting is proposed. (See Patent Document 2).
However, when the translucent resin layer is formed by such a method, before the potting process is performed, the resin layer molding frame member is positioned and arranged with respect to the substrate, and the potting process is performed. Since it is necessary to perform the operation of removing the resin layer molding frame member from the substrate after applying the above, there is a problem that the manufacturing process becomes complicated, resulting in a decrease in production efficiency.

特開２００３−１７７５６号公報JP 2003-17756 A 特開２００７−２３４９６８号公報JP 2007-234968 A

本発明は、以上のような事情に基づいてなされたものであって、その目的は、ＬＥＤチップを覆う透光性樹脂層を簡単な工程で形成することができ、しかも、ＬＥＤチップからの光の取り出し効率が高いＬＥＤ光源装置を提供することにある。   The present invention has been made based on the circumstances as described above, and an object of the present invention is to form a light-transmitting resin layer covering the LED chip by a simple process, and to emit light from the LED chip. It is in providing the LED light source device with high taking-out efficiency.

本発明のＬＥＤ光源装置は、基板と、この基板上に実装されたＬＥＤチップと、前記基板の表面に形成された、前記ＬＥＤチップを包囲する部分円環状の枠状金属膜と、この枠状金属膜によって包囲される領域内において前記ＬＥＤチップを覆うよう形成された、略半球状の透光性樹脂層とを有してなり、
前記基板には、前記ＬＥＤチップに給電するための給電用配線が形成されており、当該給電用配線の一部によって前記枠状金属膜が構成され、該枠状金属膜が前記ＬＥＤチップの一方の電極に接続され、
前記ＬＥＤチップの他方の電極に接続される前記給電用配線が、前記枠状金属膜から絶縁されて、前記枠状金属膜の開口部に配設されていることを特徴とする。
また、本発明のＬＥＤ光源装置は、基板と、この基板上に実装されたＬＥＤチップと、前記基板の表面に形成された、前記ＬＥＤチップを中心とする円上に沿って互いに離間して配置された一方の半円環状金属膜および他方の半円環状金属膜からなる枠状金属膜と、この枠状金属膜によって包囲される領域内において前記ＬＥＤチップを覆うよう形成された、略半球状の透光性樹脂層とを有してなり、
前記一方の半円環状金属膜が前記ＬＥＤチップの一方の電極側の給電用配線の一部として構成され、前記他方の半円環状金属膜が前記ＬＥＤチップの他方の電極側の給電用配線の一部として構成されていることを特徴とする。
The LED light source device of the present invention includes a substrate, an LED chip mounted on the substrate, a partially annular frame-shaped metal film that is formed on the surface of the substrate and surrounds the LED chip, and the frame shape. A substantially hemispherical translucent resin layer formed to cover the LED chip in a region surrounded by a metal film ;
A power supply wiring for supplying power to the LED chip is formed on the substrate, and the frame-shaped metal film is constituted by a part of the power supply wiring, and the frame-shaped metal film is one of the LED chips. Connected to the electrode of
The power supply wiring connected to the other electrode of the LED chip is insulated from the frame-shaped metal film and disposed in an opening of the frame-shaped metal film .
Further, the LED light source device of the present invention is arranged to be separated from each other along a substrate, an LED chip mounted on the substrate, and a circle formed on the surface of the substrate, the circle centering on the LED chip. A frame-shaped metal film composed of one semicircular metal film and the other semi-circular metal film, and a substantially hemispherical shape formed so as to cover the LED chip in a region surrounded by the frame-shaped metal film A translucent resin layer,
The one semicircular metal film is configured as a part of the power supply wiring on one electrode side of the LED chip, and the other semicircular metal film is formed on the power supply wiring on the other electrode side of the LED chip. It is configured as a part.

本発明のＬＥＤ光源装置においては、前記透光性樹脂層は、前記枠状金属膜によって包囲される領域内において、その周縁が前記枠状金属膜の内周縁に接した状態で形成されていることが好ましい。
また、前記ＬＥＤチップの平面形状が矩形であり、前記枠状金属膜の平面形状に係る部分円環の内径、または前記一方の半円環状金属膜および前記他方の半円環状金属膜からなる前記枠状金属膜によって形成される前記ＬＥＤチップを中心とする円の内径が、前記ＬＥＤチップの平面形状に係る矩形の対角線の長さの１．１〜１．５倍であることが好ましい。
また、本発明のＬＥＤ光源装置においては、前記透光性樹脂層は、前記基板の表面にポッティング加工を施すことによって形成されていることが好ましい。 In the LED light source device of the present invention, the translucent resin layer is formed in a region surrounded by the frame-shaped metal film in a state where the periphery thereof is in contact with the inner periphery of the frame-shaped metal film. It is preferable.
Further, the planar shape of the LED chip is a rectangle, and the inner diameter of the partial annular ring according to the planar shape of the frame-shaped metal film , or the one semicircular metal film and the other semicircular metal film It is preferable that the inner diameter of the circle centered on the LED chip formed by the frame-shaped metal film is 1.1 to 1.5 times the length of the diagonal line of the rectangle related to the planar shape of the LED chip.
In the LED light source device of the present invention, it is preferable that the translucent resin layer is formed by potting the surface of the substrate.

本発明のＬＥＤ光源装置によれば、基板の表面にＬＥＤチップを包囲する枠状金属膜が形成されていることにより、ポッティング加工によって透光性樹脂層を形成する際に、枠状金属膜が液状の硬化性樹脂のダムとして機能する、すなわち基板の表面に滴下された液状の硬化性樹脂が枠状金属膜によって塞き止められるため、樹脂層成型用枠部材を用いることなしに、略半球状の透光性樹脂層を所要の位置に確実に形成することができ、従って、透光性樹脂層を簡単な工程で形成することができると共に、ＬＥＤチップからの光について高い取り出し効率が得られる。   According to the LED light source device of the present invention, since the frame-shaped metal film surrounding the LED chip is formed on the surface of the substrate, the frame-shaped metal film is formed when the translucent resin layer is formed by potting. Functions as a dam of liquid curable resin, that is, the liquid curable resin dropped on the surface of the substrate is blocked by the frame-shaped metal film, so that it is substantially hemispherical without using a resin layer molding frame member. The transparent resin layer can be reliably formed at a required position. Therefore, the transparent resin layer can be formed by a simple process, and high extraction efficiency can be obtained for the light from the LED chip. It is done.

本発明の第１の実施の形態に係るＬＥＤ光源装置の構成を示す平面図である。It is a top view which shows the structure of the LED light source device which concerns on the 1st Embodiment of this invention. 図１に示すＬＥＤ光源装置における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。It is explanatory drawing which expands and shows the principal part in the LED light source device shown in FIG. 1, Comprising: (a) is a top view, (b) is sectional drawing. 本発明の第２の実施の形態に係るＬＥＤ光源装置における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。It is explanatory drawing which expands and shows the principal part in the LED light source device which concerns on the 2nd Embodiment of this invention, (a) is a top view, (b) is sectional drawing. 本発明のＬＥＤ光源装置の変形例における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。It is explanatory drawing which expands and shows the principal part in the modification of the LED light source device of this invention, Comprising: (a) is a top view, (b) is sectional drawing. 本発明のＬＥＤ光源装置の他の変形例における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。It is explanatory drawing which expands and shows the principal part in the other modification of the LED light source device of this invention, Comprising: (a) is a top view, (b) is sectional drawing. 本発明のＬＥＤ光源装置の更に他の変形例における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。It is explanatory drawing which expands and shows the principal part in the further another modification of the LED light source device of this invention, Comprising: (a) is a top view, (b) is sectional drawing.

以下、本発明のＬＥＤ光源装置の実施の形態について説明する。
図１は、本発明の第１の実施の形態に係るＬＥＤ光源装置の構成を示す平面図であり、図２は、図１に示すＬＥＤ光源装置における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。
このＬＥＤ光源装置においては、絶縁性の基板１５の表面上に、それぞれ平面形状が矩形の板状の複数（図示の例では１６個）のＬＥＤチップ１０が、縦横に並んだ状態で、それぞれ接着材１１によって固定されて配置されている。 Hereinafter, embodiments of the LED light source device of the present invention will be described.
FIG. 1 is a plan view showing the configuration of the LED light source device according to the first embodiment of the present invention, and FIG. 2 is an explanatory view showing an enlarged main part of the LED light source device shown in FIG. (A) is a plan view and (b) is a cross-sectional view.
In this LED light source device, a plurality of (16 in the illustrated example) LED chips 10 each having a rectangular planar shape are bonded to the surface of the insulating substrate 15 in a state where they are arranged vertically and horizontally. The material 11 is fixed and arranged.

基板１５の表面には、ＬＥＤチップ１０の各々に給電するための給電用配線１６が形成されており、この給電用配線１６によって、例えば８個のＬＥＤチップ１０が直列に接続されている。図示の例では、給電用配線１６の一部によって、ＬＥＤチップ１０の各々を包囲する、それぞれ平面形状が部分円環状の複数の枠状金属膜１７が形成されている。この例のＬＥＤチップ１０は、上面にカソード電極（図示省略）を有すると共に下面にアノード電極（図示省略）を有するものであり、ＬＥＤチップ１０のカソード電極は、ボンディングワイヤ１８によって、給電用配線１６の一部である枠状金属膜１７に電気的に接続され、ＬＥＤチップ１０のアノード電極は、例えば半田等によって枠状金属膜１７以外のアノード側の給電用配線１６に電気的に接続されている。   On the surface of the substrate 15, a power supply wiring 16 for supplying power to each of the LED chips 10 is formed. For example, eight LED chips 10 are connected in series by the power supply wiring 16. In the example shown in the drawing, a plurality of frame-shaped metal films 17 each having a partial annular shape in plan view are formed by surrounding part of the LED chip 10 by a part of the power supply wiring 16. The LED chip 10 of this example has a cathode electrode (not shown) on the upper surface and an anode electrode (not shown) on the lower surface. The cathode electrode of the LED chip 10 is connected to the power supply wiring 16 by a bonding wire 18. The anode electrode of the LED chip 10 is electrically connected to the power supply wiring 16 on the anode side other than the frame-shaped metal film 17 by, for example, solder or the like. Yes.

そして、基板１５の表面上には、複数の透光性樹脂層２０が、それぞれ枠状金属膜１７によって包囲される領域内において、当該枠状金属膜１７の内周縁に当該透光性樹脂層２０の周縁が接した状態で、ＬＥＤチップ１０を覆うよう形成されている。   On the surface of the substrate 15, the translucent resin layer 20 is disposed on the inner periphery of the frame-shaped metal film 17 in a region surrounded by the frame-shaped metal film 17. The LED chip 10 is formed so as to cover the peripheral edge 20.

ＬＥＤチップ１０としては、インジウム（Ｉｎ）、アルミニウム（Ａｌ）を含む窒化ガリウム（ＧａＮ）系の発光層を有するものを用いることができる。
また、ＬＥＤチップ１０の発光波長は、特に限定されず、青色波長域、緑色波長域、赤色波長域などの可視光域の発光波長を有するもの、紫外線域に発光波長を有するもの、赤外線域に発光波長を有するもののいずれであってもよい。
ＬＥＤチップ１０としては、平面の縦横の寸法がそれぞれ０．２〜２．０ｍｍのものを用いることが好ましい。この寸法が過大である場合には、後述するポッティング加工によって透光性樹脂層２０を形成することが困難となることがある。
また、ＬＥＤチップ１０の厚みは、例えば５０〜３００μｍである。 As the LED chip 10, one having a gallium nitride (GaN) -based light emitting layer containing indium (In) and aluminum (Al) can be used.
Further, the emission wavelength of the LED chip 10 is not particularly limited, and the LED chip 10 has a light emission wavelength in the visible light region such as a blue wavelength region, a green wavelength region, and a red wavelength region, a light emission wavelength in the ultraviolet region, and an infrared region. Any of those having an emission wavelength may be used.
As the LED chip 10, it is preferable to use a chip whose vertical and horizontal dimensions are 0.2 to 2.0 mm, respectively. If this dimension is excessive, it may be difficult to form the translucent resin layer 20 by potting as described later.
Moreover, the thickness of the LED chip 10 is, for example, 50 to 300 μm.

基板１５を構成する材料としては、窒化アルミニウム、アルミナセラミックス、ガラス繊維補強型エポキシ樹脂、シリコンなどを用いることができる。
枠状金属膜１７を含む給電用配線１６としては、銅よりなるもの、または銅よりなる配線基材の表面に、ニッケル、パラジウム、金またはこれらの複数がメッキされてなるものを用いることができ、具体的な一例を挙げると、厚みが例えば２０μｍの銅よりなる配線基材の表面に、厚みが例えば３μｍのニッケル、厚みが例えば０．１μｍのパラジウムおよび厚みが例えば０．１μｍの金がこの順でメッキされてなるものである。
配線１６を形成する方法としては、蒸着法、スクリーン印刷法、メッキ法などを利用することができる。
また、ボンディングワイヤ１８は、例えば金によって構成され、その線径は例えば３０μｍである。 As a material constituting the substrate 15, aluminum nitride, alumina ceramics, glass fiber reinforced epoxy resin, silicon, or the like can be used.
As the power supply wiring 16 including the frame-shaped metal film 17, one made of copper, or one obtained by plating nickel, palladium, gold or a plurality of these on the surface of a wiring substrate made of copper can be used. As a specific example, on the surface of a wiring substrate made of copper having a thickness of, for example, 20 μm, nickel having a thickness of, for example, 3 μm, palladium having a thickness of, for example, 0.1 μm, and gold having a thickness of, for example, 0.1 μm. They are plated in order.
As a method for forming the wiring 16, vapor deposition, screen printing, plating, or the like can be used.
The bonding wire 18 is made of, for example, gold and has a wire diameter of, for example, 30 μm.

枠状金属膜１７の平面形状に係る部分円環の内径は、ＬＥＤチップ１０の平面形状に係る矩形の対角線の長さの１．１〜１．５倍であることが好ましい。この内径が過小である場合には、枠状金属膜１７がＬＥＤチップ１０の接着材１１と接触し、アノードとカソードとが短絡する可能性がある。一方、この内径が過大である場合には、硬化性樹脂の滴下量が多くて塞き止める効果がなくなり、硬化性樹脂が流延し略半球状の透光性樹脂層２０が形成されない。
枠状金属膜１７の内径および外径の具体的な値を示すと、内径が例えば０．３〜４．２ｍｍ、外径が例えば０．４〜４．７ｍｍ、枠状金属膜１７の幅が例えば０．１〜０．５ｍｍである。
また、枠状金属膜１７における基板１５の表面からの突出高さは、２０〜４０μｍであることが好ましい。この突出高さが過小である場合には、後述するポティング加工によって透光性樹脂層２０を形成する際に、枠状金属膜１７が熱硬化性樹脂のダムとして機能せず、得られる透光性樹脂層２０に位置ずれが生じやすくなる。 The inner diameter of the partial ring related to the planar shape of the frame-shaped metal film 17 is preferably 1.1 to 1.5 times the length of the diagonal of the rectangle related to the planar shape of the LED chip 10. If the inner diameter is too small, the frame-shaped metal film 17 may come into contact with the adhesive 11 of the LED chip 10 and the anode and the cathode may be short-circuited. On the other hand, when the inner diameter is excessive, the amount of the curable resin dropped is so large that the effect of blocking is lost, the curable resin is cast, and the substantially hemispherical translucent resin layer 20 is not formed.
Specific values of the inner diameter and the outer diameter of the frame-shaped metal film 17 are as follows: the inner diameter is, for example, 0.3 to 4.2 mm, the outer diameter is, for example, 0.4 to 4.7 mm, and the width of the frame-shaped metal film 17 is For example, it is 0.1 to 0.5 mm.
Moreover, it is preferable that the protrusion height from the surface of the board | substrate 15 in the frame-shaped metal film 17 is 20-40 micrometers. When this protrusion height is too small, the frame-shaped metal film 17 does not function as a thermosetting resin dam when the light-transmitting resin layer 20 is formed by potting described later, and the light-transmitting light obtained is obtained. Misalignment easily occurs in the conductive resin layer 20.

透光性樹脂層２０は、基板１５の表面に液状の熱硬化型または光硬化型の硬化性樹脂を用いたポッティング（樹脂盛り）加工を施すことによって形成されている。具体的には、基板１５の表面にＬＥＤチップ１０を実装した後、当該基板１５の表面における枠状金属膜１７によって包囲される領域内に、液状の硬化性樹脂を滴下することにより、ＬＥＤチップ１０およびその周辺領域を覆う液状樹脂層を形成した後、加熱処理または光照射処理によって液状樹脂層を硬化させることにより、透光性樹脂層２０が形成される。   The translucent resin layer 20 is formed by subjecting the surface of the substrate 15 to potting (resin piling) processing using a liquid thermosetting or photocurable curable resin. Specifically, after mounting the LED chip 10 on the surface of the substrate 15, a liquid curable resin is dropped into a region surrounded by the frame-like metal film 17 on the surface of the substrate 15, thereby the LED chip. After the liquid resin layer covering 10 and its peripheral region is formed, the light transmissive resin layer 20 is formed by curing the liquid resin layer by heat treatment or light irradiation treatment.

透光性樹脂層２０を形成するための硬化性樹脂としては、得られる硬化樹脂が透明なものであればよく、その具体例としては、シリコーン樹脂、エポキシ樹脂などを挙げることができる。
また、透光性樹脂層２０を形成するための熱硬化性樹脂は、基板１５の表面に滴下したときに略半球状の液滴が形成される程度の高い粘度を有するものを用いることが好ましい。 The curable resin for forming the translucent resin layer 20 may be any resin as long as the obtained cured resin is transparent, and specific examples thereof include a silicone resin and an epoxy resin.
Moreover, it is preferable to use a thermosetting resin for forming the translucent resin layer 20 having a viscosity that is high enough to form a substantially hemispherical droplet when dropped onto the surface of the substrate 15. .

また、透光性樹脂層２０は、ＬＥＤチップ１０を中心とする略半球状に形成されている。具体的には、基板１５の面方向における透光性樹脂層２０の半径ｒと、透光性樹脂層２０におけるＬＥＤチップ１０の基板１５の表面からの突出高さｈとの比（ｒ／ｈ）が０．３〜１．２であることが好ましく、より好ましくは０．７〜１．０である。
透光性樹脂層２０における半径ｒおよび突出高さｈの具体的な値を示すと、半径ｒが例えば０．２〜２．１ｍｍ、突出高さｈが例えば０．２〜２．４ｍｍである。 The translucent resin layer 20 is formed in a substantially hemispherical shape centering on the LED chip 10. Specifically, the ratio (r / h) between the radius r of the translucent resin layer 20 in the surface direction of the substrate 15 and the protruding height h of the translucent resin layer 20 from the surface of the substrate 15 of the LED chip 10. ) Is preferably 0.3 to 1.2, more preferably 0.7 to 1.0.
When the specific value of the radius r and the protrusion height h in the translucent resin layer 20 is shown, the radius r is, for example, 0.2 to 2.1 mm, and the protrusion height h is, for example, 0.2 to 2.4 mm. .

このようなＬＥＤ光源装置によれば、基板１５の表面にＬＥＤチップ１０を包囲する枠状金属膜１７が形成されていることにより、ポッティング加工によって透光性樹脂層２０を形成する際に、枠状金属膜１７が液状の硬化性樹脂のダムとして機能する、すなわち基板１５の滴下された液状の硬化性樹脂が枠状金属膜１７によって塞き止められるため、樹脂層成型用枠部材を用いることなしに、略半球状の透光性樹脂層２０を所要の位置に確実に形成することができ、従って、透光性樹脂層２０を簡単な工程で形成することができると共に、ＬＥＤチップ１０からの光について高い取り出し効率が得られる。   According to such an LED light source device, since the frame-like metal film 17 surrounding the LED chip 10 is formed on the surface of the substrate 15, the frame is formed when the translucent resin layer 20 is formed by potting. Since the metal film 17 functions as a dam of a liquid curable resin, that is, the liquid curable resin dropped on the substrate 15 is blocked by the frame metal film 17, a resin layer molding frame member is used. The translucent resin layer 20 having a substantially hemispherical shape can be reliably formed at a required position, and thus the translucent resin layer 20 can be formed by a simple process. High extraction efficiency can be obtained with respect to the light.

図３は、本発明の第２の実施の形態に係るＬＥＤ光源装置における要部を拡大して示す説明図であって、（ａ）は平面図、（ｂ）は断面図である。
このＬＥＤ光源装置においては、給電用配線１６が形成された絶縁性の基板１５の表面に、それぞれ平面形状が矩形の板状の複数のＬＥＤチップ１０が、縦横に並んだ状態で、それぞれフリップチップ実装されている。具体的に説明すると、この例のＬＥＤチップ１０は、下面にカソード電極（図示省略）およびアノード電極（図示省略）を有するものであり、カソード電極およびアノード電極の各々の表面には半田ボール１２が形成されており、ＬＥＤチップ１０のカソード電極およびアノード電極の各々は、半田ボール１２および基板１５に形成された当該基板１５の厚み方向に貫通して伸びるバイアホール１９を介して基板１５の裏面に形成された給電用配線１６に電気的接続されている。
基板１５の表面には、ＬＥＤチップ１０の各々を包囲する、それぞれ平面形状が円環状の複数の枠状金属膜１７が形成されている。この例の枠状金属膜１７は、給電用配線１６とは別体のものである。
そして、基板１５の表面上には、ＬＥＤチップ１０を中心とする略半球状の複数の透光性樹脂層２０が、それぞれ枠状金属膜１７によって包囲される領域内において、当該枠状金属膜１７の内周縁に当該透光性樹脂層２０の周縁が接した状態で、ＬＥＤチップ１０を覆うよう形成されている。
この第２の実施の形態に係るＬＥＤ光源装置におけるその他の具体的な構成は、第１の実施の形態に係るＬＥＤ光源装置と同様である。 3A and 3B are explanatory views showing, in an enlarged manner, main portions of the LED light source device according to the second embodiment of the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a cross-sectional view.
In this LED light source device, a plurality of LED chips 10 each having a rectangular planar shape are arranged vertically and horizontally on the surface of an insulating substrate 15 on which power supply wirings 16 are formed. Has been implemented. More specifically, the LED chip 10 of this example has a cathode electrode (not shown) and an anode electrode (not shown) on the lower surface, and solder balls 12 are formed on the surfaces of the cathode electrode and the anode electrode, respectively. Each of the cathode electrode and the anode electrode of the LED chip 10 is formed on the back surface of the substrate 15 through a via hole 19 extending through the solder ball 12 and the substrate 15 in the thickness direction of the substrate 15. It is electrically connected to the formed power supply wiring 16.
On the surface of the substrate 15, a plurality of frame-shaped metal films 17 each having an annular shape in plan view are formed so as to surround each of the LED chips 10. The frame-shaped metal film 17 in this example is separate from the power supply wiring 16.
On the surface of the substrate 15, a plurality of substantially hemispherical translucent resin layers 20 centering on the LED chip 10 are respectively surrounded by the frame-shaped metal film 17. The LED chip 10 is formed so as to cover the inner peripheral edge 17 with the peripheral edge of the translucent resin layer 20 in contact therewith.
Other specific configurations of the LED light source device according to the second embodiment are the same as those of the LED light source device according to the first embodiment.

このようなＬＥＤ光源装置によれば、基板１５の表面にＬＥＤチップ１０を包囲する枠状金属膜１７が形成されていることにより、ポッティング加工によって透光性樹脂層２０を形成する際に、枠状金属膜１７が液状の硬化性樹脂のダムとして機能する、すなわち基板１５の表面に滴下された液状の硬化性樹脂が枠状金属膜１７によって塞き止められるため、樹脂層成型用枠部材を用いることなしに、略半球状の透光性樹脂層２０を所要の位置に確実に形成することができ、従って、透光性樹脂層２０を簡単な工程で形成することができると共に、ＬＥＤチップ１０からの光について高い取り出し効率が得られる。   According to such an LED light source device, since the frame-like metal film 17 surrounding the LED chip 10 is formed on the surface of the substrate 15, the frame is formed when the translucent resin layer 20 is formed by potting. Since the metal film 17 functions as a dam of liquid curable resin, that is, the liquid curable resin dropped on the surface of the substrate 15 is blocked by the frame metal film 17, the frame member for resin layer molding Without being used, the translucent resin layer 20 having a substantially hemispherical shape can be reliably formed at a required position. Therefore, the translucent resin layer 20 can be formed by a simple process, and the LED chip. High extraction efficiency can be obtained for light from 10.

本発明のＬＥＤ光源装置は、上記の実施の形態に限定されず、種々の変更を加えることが可能である。
例えば、ＬＥＤチップ１０は、その表面にアノード電極およびカソード電極の両方を有するものであってもよい。このようなＬＥＤチップ１０を用いる場合には、図４に示すように、２つの半円環状金属膜１７ａ，１７ｂがＬＥＤチップ１０を中心とする円上に沿って互いに離間して配置されてなる枠状金属膜１７を形成し、一方の半円環状金属膜１７ａをアノード側の給電用配線１６の一部として構成すると共に、他方の半円環状金属膜１７ｂをカソード側の給電用配線１６の一部として構成し、アノード電極をボンディングワイヤ１８によって一方の半円環状金属膜１７ａに電気的に接続し、カソード電極をボンディングワイヤ１８によって他方の半円環状金属膜１７ｂに電気的に接続することができる。 The LED light source device of the present invention is not limited to the above embodiment, and various modifications can be made.
For example, the LED chip 10 may have both an anode electrode and a cathode electrode on the surface thereof. When such an LED chip 10 is used, as shown in FIG. 4, two semi-annular metal films 17 a and 17 b are arranged apart from each other along a circle centering on the LED chip 10. The frame-shaped metal film 17 is formed, and one semi-annular metal film 17a is configured as a part of the anode-side power supply wiring 16, and the other semi-circular metal film 17b is formed on the cathode-side power supply wiring 16. The anode electrode is electrically connected to one semi-annular metal film 17a by a bonding wire 18, and the cathode electrode is electrically connected to the other semi-annular metal film 17b by a bonding wire 18. Can do.

また、図５に示すように、下面にアノード電極（図示省略）およびカソード電極（図示省略）を有するＬＥＤチップ１０を例えばフリップチップ実装する場合には、アノード側の給電用配線１６が一方の半円環状金属膜１７ａを交差し、カソード側の給電用配線１６が、他方の半円環状金属膜１７ｂを交差するよう形成されていてもよい。   Further, as shown in FIG. 5, when the LED chip 10 having an anode electrode (not shown) and a cathode electrode (not shown) on the lower surface is mounted by flip chip mounting, for example, the anode-side power supply wiring 16 is provided on one half. The cathode-side power supply wiring 16 may be formed so as to cross the annular metal film 17a and the other semi-annular metal film 17b.

また、図６に示すように、給電用配線１６と別体の枠状金属膜１７を設ける場合において、上面にカソード電極（図示省略）を有すると共に下面にアノード電極（図示省略）を有するＬＥＤチップ１０を用いるときには、アノード電極が、基板１５に形成された当該基板１５の厚み方向に貫通して伸びるバイアホール１９を介して、基板１５の裏面に形成された給電用配線１６に電気的に接続され、カソード電極が、ボンディングワイヤ１８、基板１５の表面における枠状金属膜１７によって包囲される領域内に形成された端子電極１４、および基板１５に形成された当該基板１５の厚み方向に貫通して伸びるバイアホール１９を介して、基板１５の裏面に形成された給電用配線１６に電気的に接続されていてもよい。
また、図２および図６の各々に示すＬＥＤ光源装置において、アノード電極およびカソード電極の接続構造が逆のものであってもよい。 Further, as shown in FIG. 6, in the case where the frame-like metal film 17 is provided separately from the power supply wiring 16, an LED chip having a cathode electrode (not shown) on the upper surface and an anode electrode (not shown) on the lower surface. 10 is used, the anode electrode is electrically connected to the power supply wiring 16 formed on the back surface of the substrate 15 through a via hole 19 extending through the substrate 15 in the thickness direction of the substrate 15. The cathode electrode penetrates in the thickness direction of the substrate 15 formed on the bonding wire 18, the terminal electrode 14 formed in the region surrounded by the frame-shaped metal film 17 on the surface of the substrate 15, and the substrate 15. It may be electrically connected to a power supply wiring 16 formed on the back surface of the substrate 15 through a via hole 19 extending in this manner.
Further, in the LED light source device shown in each of FIGS. 2 and 6, the connection structure of the anode electrode and the cathode electrode may be reversed.

以下、本発明のＬＥＤ光源装置の具体的な実施例について説明するが、本発明は下記の実施例に限定されるものではない。   Hereinafter, although the specific Example of the LED light source device of this invention is described, this invention is not limited to the following Example.

〈実施例１〉
図１および図２の構成に従い、以下のようにしてＬＥＤ光源装置を製造した。
厚みが０．６３５ｍｍの窒化アルミニウムよりなる基板（１５）の表面に、スクリーン印刷法によって厚みが２０μｍの銅よりなる配線基材を形成し、この配線基材の表面に、メッキ法により、厚みが３．０μｍのニッケルメッキ層、厚みが０．１μｍのパラジウムメッキ層、および厚みが０．１μｍの金メッキ層をこの順で形成することにより、部分円環状の枠状金属膜（１７）を含む給電用配線（１６）を形成した。
得られた給電用配線（１６）の配線パターンは、１８個のＬＥＤチップが直列に接続されるものであり、枠状金属膜（１７）の平面形状に係る円環の内径が２ｍｍで外径が２．２ｍｍのものである。 <Example 1>
According to the configuration of FIGS. 1 and 2, an LED light source device was manufactured as follows.
A wiring substrate made of copper having a thickness of 20 μm is formed by screen printing on the surface of a substrate (15) made of aluminum nitride having a thickness of 0.635 mm, and the thickness is increased by plating on the surface of the wiring substrate. By forming a nickel plating layer having a thickness of 3.0 μm, a palladium plating layer having a thickness of 0.1 μm, and a gold plating layer having a thickness of 0.1 μm in this order, a power supply including a partially annular frame-shaped metal film (17). A wiring for use (16) was formed.
The wiring pattern of the obtained power supply wiring (16) is one in which 18 LED chips are connected in series, and the inner diameter of the annular ring related to the planar shape of the frame-shaped metal film (17) is 2 mm and the outer diameter. Is 2.2 mm.

次いで、上面にカソード電極を有すると共に下面にアノード電極を有し、平面形状が１ｍｍ×１ｍｍの矩形（対角線の長さが約１．４１ｍｍ）で、厚みが２５０μｍのＬＥＤチップ（１０）を合計で１８個用意した。このＬＥＤチップ（１０）は、窒化ガリウム（ＧａＮ）系の発光層を有する、発光ピーク波長が３９５ｎｍのものである。
これらのＬＥＤチップ（１０）の各々を、 基板（１５）の表面における枠状金属膜（１７）に包囲される領域内の所要の位置に配置し、アノード電極をＣｕＳｎ半田によって給電用配線（１６）に電気的に接続すると共に、カソード電極を線径が３０μｍの金よりなるボンディングワイヤ（１８）によって枠状金属膜（１７）に電気的に接続した。 Next, the LED electrode (10) having a cathode electrode on the upper surface and an anode electrode on the lower surface, a planar shape of 1 mm × 1 mm rectangle (diagonal length is about 1.41 mm), and a thickness of 250 μm in total. 18 were prepared. This LED chip (10) has a gallium nitride (GaN) -based light emitting layer and a light emission peak wavelength of 395 nm.
Each of these LED chips (10) is arranged at a required position in the region surrounded by the frame-shaped metal film (17) on the surface of the substrate (15), and the anode electrode is fed with a power supply wiring (16 The cathode electrode was electrically connected to the frame-shaped metal film (17) by a bonding wire (18) made of gold having a wire diameter of 30 μm.

そして、基板（１５）の表面における枠状金属膜（１７）によって包囲される領域内に、液状の硬化型のシリコーン樹脂を滴下することにより、ＬＥＤチップ（１０）およびその周辺領域を覆う液状樹脂層を形成した後、８５℃で２０分間、１５０℃で１時間の加熱処理を施すことによって液状樹脂層を硬化させることにより、透光性樹脂層（２０）を形成し、以て、ＬＥＤ光源装置を製造した。得られたＬＥＤ光源装置における透光性樹脂層（２０）の各々は、いずれもＬＥＤチップ（１０）を中心とする略半球状のものであり、基板（１５）の面方向における直径（２ｒ）が約２．０ｍｍで、基板（１５）の表面からの突出高さ（ｈ）が１．９ｍｍの略半球状のものであった。   And liquid resin which covers LED chip (10) and its peripheral area | region by dripping a liquid curable silicone resin in the area | region enclosed by the frame-shaped metal film (17) in the surface of a board | substrate (15). After forming the layer, the liquid resin layer is cured by performing a heat treatment at 85 ° C. for 20 minutes and at 150 ° C. for 1 hour to form a translucent resin layer (20), and thus an LED light source The device was manufactured. Each of the translucent resin layers (20) in the obtained LED light source device has a substantially hemispherical shape centering on the LED chip (10), and has a diameter (2r) in the surface direction of the substrate (15). Was approximately 2.0 mm, and the protrusion height (h) from the surface of the substrate (15) was approximately hemispherical of 1.9 mm.

このＬＥＤ光源装置における基板（１５）の裏面に、ヒートシンクおよびファンを設置し、当該ＬＥＤ光源装置に１．０Ａの直流電流を供給して点灯させ、基板（１５）から１０ｍｍ離間した位置における照度を測定したところ、２．０Ｗ／ｃｍ2 であった。この照度の値は、透光性樹脂層が形成されていないＬＥＤ光源装置による照度の値と同等のものであり、上記のＬＥＤ光源装置は、ＬＥＤチップ（１０）からの光の取り出し効率が高いものであることが確認された。 A heat sink and a fan are installed on the back surface of the substrate (15) in this LED light source device, and a 1.0 A direct current is supplied to the LED light source device to light it, and the illuminance at a position 10 mm away from the substrate (15) is obtained. It was 2.0 W / cm 2 when measured. This illuminance value is equivalent to the illuminance value of the LED light source device in which the translucent resin layer is not formed, and the above LED light source device has high light extraction efficiency from the LED chip (10). It was confirmed to be a thing.

１０ ＬＥＤチップ
１１ 接着材
１２ 半田ボール
１４ 端子電極
１５ 基板
１６ 給電用配線
１７ 枠状金属膜
１７ａ，１７ｂ 半円環状金属膜
１８ ボンディングワイヤ
１９ バイアホール
２０ 透光性樹脂層 DESCRIPTION OF SYMBOLS 10 LED chip 11 Adhesive material 12 Solder ball 14 Terminal electrode 15 Board | substrate 16 Power supply wiring 17 Frame-shaped metal film 17a, 17b Semi-annular metal film 18 Bonding wire 19 Via hole 20 Translucent resin layer

Claims (5)

基板と、この基板上に実装されたＬＥＤチップと、前記基板の表面に形成された、前記ＬＥＤチップを包囲する部分円環状の枠状金属膜と、この枠状金属膜によって包囲される領域内において前記ＬＥＤチップを覆うよう形成された、略半球状の透光性樹脂層とを有してなり、
前記基板には、前記ＬＥＤチップに給電するための給電用配線が形成されており、当該給電用配線の一部によって前記枠状金属膜が構成され、該枠状金属膜が前記ＬＥＤチップの一方の電極に接続され、
前記ＬＥＤチップの他方の電極に接続される前記給電用配線が、前記枠状金属膜から絶縁されて、前記枠状金属膜の開口部に配設されていることを特徴とするＬＥＤ光源装置。 A substrate, an LED chip mounted on the substrate, a partially annular frame-shaped metal film surrounding the LED chip formed on the surface of the substrate, and an area surrounded by the frame-shaped metal film And having a substantially hemispherical translucent resin layer formed so as to cover the LED chip ,
A power supply wiring for supplying power to the LED chip is formed on the substrate, and the frame-shaped metal film is constituted by a part of the power supply wiring, and the frame-shaped metal film is one of the LED chips. Connected to the electrode of
The LED light source device , wherein the power supply wiring connected to the other electrode of the LED chip is insulated from the frame-shaped metal film and disposed in an opening of the frame-shaped metal film . 基板と、この基板上に実装されたＬＥＤチップと、前記基板の表面に形成された、前記ＬＥＤチップを中心とする円上に沿って互いに離間して配置された一方の半円環状金属膜および他方の半円環状金属膜からなる枠状金属膜と、この枠状金属膜によって包囲される領域内において前記ＬＥＤチップを覆うよう形成された、略半球状の透光性樹脂層とを有してなり、
前記一方の半円環状金属膜が前記ＬＥＤチップの一方の電極側の給電用配線の一部として構成され、前記他方の半円環状金属膜が前記ＬＥＤチップの他方の電極側の給電用配線の一部として構成されていることを特徴とするＬＥＤ光源装置。 A substrate, an LED chip mounted on the substrate, a semicircular metal film disposed on the surface of the substrate and spaced apart from each other along a circle centered on the LED chip; and A frame-shaped metal film made of the other semicircular metal film, and a substantially hemispherical translucent resin layer formed so as to cover the LED chip in a region surrounded by the frame-shaped metal film. And
The one semicircular metal film is configured as a part of the power supply wiring on one electrode side of the LED chip, and the other semicircular metal film is formed on the power supply wiring on the other electrode side of the LED chip. An LED light source device configured as a part . 前記透光性樹脂層は、前記枠状金属膜によって包囲される領域内において、その周縁が前記枠状金属膜の内周縁に接した状態で形成されていることを特徴とする請求項１または請求項２に記載のＬＥＤ光源装置。 2. The translucent resin layer is formed in a state in which a peripheral edge thereof is in contact with an inner peripheral edge of the frame-shaped metal film in a region surrounded by the frame-shaped metal film. The LED light source device according to claim 2. 前記ＬＥＤチップの平面形状が矩形であり、前記枠状金属膜の平面形状に係る部分円環の内径、または前記一方の半円環状金属膜および前記他方の半円環状金属膜からなる前記枠状金属膜によって形成される前記ＬＥＤチップを中心とする円の内径が、前記ＬＥＤチップの平面形状に係る矩形の対角線の長さの１．１〜１．５倍であることを特徴とする請求項１または請求項２に記載のＬＥＤ光源装置。 The planar shape of the LED chip is a rectangular shape, and the inner shape of the partial ring according to the planar shape of the frame-shaped metal film , or the frame shape formed of the one semicircular metal film and the other semicircular metal film claims inner diameter of a circle centered on the said LED chip formed by a metal film, characterized in that it is 1.1 to 1.5 times the rectangular diagonal length of the planar shape of the LED chip The LED light source device according to claim 1 or 2 . 前記透光性樹脂層は、前記基板の表面にポッティング加工を施すことによって形成されていることを特徴とする請求項１乃至請求項４のいずれかに記載のＬＥＤ光源装置。   The LED light source device according to claim 1, wherein the translucent resin layer is formed by performing a potting process on a surface of the substrate.
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