CN111430523B - Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device - Google Patents
Micro light-emitting diode structure, manufacturing method thereof and micro light-emitting diode device Download PDFInfo
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- CN111430523B CN111430523B CN202010419565.9A CN202010419565A CN111430523B CN 111430523 B CN111430523 B CN 111430523B CN 202010419565 A CN202010419565 A CN 202010419565A CN 111430523 B CN111430523 B CN 111430523B
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Abstract
The invention provides a micro light-emitting diode structure, a manufacturing method thereof and a micro light-emitting diode device. The micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light-emitting elements and the light blocking structures are arranged on the temporary substrate and are arranged alternately. Each light blocking structure comprises a light shielding layer and a light shielding layer arranged on the light shielding layer. The micro light-emitting element and the light blocking structure are fixed on the temporary substrate through the connection layer. The reflectivity of the light shielding layer is larger than that of the connecting layer, and the Young modulus of the light shielding layer is larger than that of the connecting layer. The micro light-emitting diode structure of the invention has better structure reliability.
Description
Technical Field
The present invention relates to a light emitting structure, a method for fabricating the same, and a device using the same, and more particularly, to a micro light emitting diode structure, a method for fabricating the same, and a micro light emitting diode device using the same.
Background
In the fabrication of a conventional micro led structure, a micro led chip is generally transferred onto a temporary substrate, and then a light blocking structure is fabricated. Since the light-blocking structure is fabricated by exposing, developing and etching, the micro-led chip transferred onto the temporary substrate is easily damaged. In addition, the light-blocking structure fabricated on the temporary substrate has poor developing and stripping effects, which is likely to cause the problems of reduced reliability and low yield.
Disclosure of Invention
The invention is directed to a micro light emitting diode structure, which has better structure reliability.
The invention aims at a manufacturing method of a micro light-emitting diode structure, which is used for manufacturing the micro light-emitting diode structure and has better production yield.
The invention also aims at a micro light-emitting diode device which comprises the micro light-emitting diode structure and has better display yield.
According to an embodiment of the present invention, a micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light-emitting element is disposed on the temporary substrate. The light blocking structure is arranged on the temporary substrate and is arranged alternately with the micro light-emitting elements. Each light blocking structure comprises a light shielding layer and a light shielding layer arranged on the light shielding layer. The micro light-emitting element and the light blocking structure are fixed on the temporary substrate through the connection layer. The reflectivity of the light shielding layer is larger than that of the connecting layer, and the Young modulus of the light shielding layer is larger than that of the connecting layer.
In the micro led structure according to the embodiment of the invention, the reflectivity of the light shielding layer is greater than the reflectivity of the light shielding layer. The Young's modulus of the light shielding layer is larger than that of the light shielding layer.
In the micro light emitting diode structure according to the embodiment of the invention, the young modulus of the light shielding layer is greater than or equal to the young modulus of the connecting layer.
In the micro light emitting diode structure according to the embodiment of the invention, the connection layer includes a plurality of connection portions separated from each other. The micro light-emitting element and the light shielding layer of each light blocking structure are respectively arranged on the connecting part, and part of the temporary substrate is exposed out of the connecting part.
In the micro led structure according to an embodiment of the present invention, the connection layer is a part of the plurality of fixing structures. The Young's modulus of the light shielding layer is larger than that of the fixed structure. The young's modulus of the fixing structure is greater than the young's modulus of the light shielding layer.
In the micro led structure according to an embodiment of the present invention, the fixing structure includes a plurality of first fixing structures and a plurality of second fixing structures. Each first fixing structure covers the light shielding layer, extends from the edge of the light shielding layer to cover the edge of the light shielding layer, and is connected to the temporary substrate. A first air gap is formed between the light shielding layer and the temporary substrate. Each second fixing structure covers the light-emitting element and extends from the edge of the micro light-emitting element and is connected to the temporary substrate. A second air gap is formed between the micro light-emitting element and the temporary substrate.
In the micro led structure according to the embodiment of the invention, the edge of the light shielding layer is aligned with the edge of the light shielding layer.
In the micro led structure according to the embodiment of the invention, the width of the light shielding layer gradually increases from the light shielding layer to the temporary substrate. The width of each micro light-emitting element gradually increases from the temporary substrate to a direction away from the temporary substrate.
In the micro light emitting diode structure according to the embodiment of the invention, the first height of each light blocking structure is greater than or equal to the second height of each micro light emitting element.
In the micro led structure according to the embodiment of the invention, the third height of each light shielding layer is greater than or equal to the second height of each micro light emitting element.
In the micro light emitting diode structure according to an embodiment of the present invention, the light blocking structure further includes a plurality of light shielding connection layers. Each light shielding connecting layer is connected with each micro light-emitting element and the light shielding layers positioned on the two opposite sides of each micro light-emitting element.
In the micro led structure according to the embodiment of the present invention, the light shielding layer has a rough peripheral surface.
According to an embodiment of the present invention, a micro light emitting diode device includes a wiring substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light-emitting element is arranged on the circuit substrate. The light blocking structure is configured on the circuit substrate and is arranged with the micro light-emitting elements alternately. Each light blocking structure comprises a light shielding layer and a light shielding layer arranged on the light shielding layer. The light blocking structure is fixed on the circuit substrate through the connecting layer. The reflectivity of the light shielding layer is greater than the reflectivity of the connecting layer. The Young's modulus of the light shielding layer is larger than that of the connecting layer.
In the micro light emitting diode device according to the embodiment of the invention, the reflectivity of the light shielding layer is greater than that of the light shielding layer. The Young's modulus of the light shielding layer is larger than that of the light shielding layer.
In the micro led device according to the embodiment of the invention, the micro led device further includes a plurality of light guide layers at least disposed on the light shielding layer. The edge of each light guide layer is aligned with or smaller than the edge of the corresponding light shielding layer.
In the micro light emitting diode device according to the embodiment of the invention, the connection layer includes a plurality of connection portions. The connecting parts are respectively positioned between the light blocking structures and the circuit substrate. The Young's modulus of the light shielding layer is larger than that of the connecting part.
In the micro led device according to the embodiment of the invention, an area of an orthographic projection of each connecting portion on the circuit substrate is larger than an area of an orthographic projection of each light blocking structure on the circuit substrate.
In the micro led device according to an embodiment of the present invention, the connection layer includes a plurality of pad portions, and the light blocking structure further includes a plurality of light shielding connection layers. Each light shielding connecting layer is connected with each micro light-emitting element and the light shielding layers positioned on the two opposite sides of each micro light-emitting element. Each connecting pad is positioned between each light shielding connecting layer and the circuit substrate. The micro light-emitting element is electrically connected with the circuit substrate through the pad part.
In the micro led device according to an embodiment of the present invention, the connection layer is an Anisotropic Conductive Film (ACF) layer.
In the micro light emitting diode device according to the embodiment of the invention, each of the light blocking structures is inclined at an angle relative to the extending direction of the wiring substrate. The maximum distance from the micro light-emitting device to the photoresist structures on the two opposite sides is different.
In the micro light emitting diode device according to the embodiment of the invention, the micro light emitting diode device further comprises a light conversion layer which is connected with the light blocking structure and covers the micro light emitting element. A gap is formed between the light conversion layer and the circuit substrate.
According to an embodiment of the invention, a method for manufacturing a micro light emitting diode structure comprises the following steps. A first transpose head is provided. The first transfer head carries a plurality of micro light emitting elements separated from each other. A second transpose head is provided. The second transpose head carries a plurality of light blocking structures separated from each other. Each light blocking structure comprises a light shielding layer and a light shielding layer arranged on the light shielding layer. A temporary substrate is provided. The micro light-emitting elements are transferred onto the temporary substrate by the first transposing head. Transferring the photoresist structure onto the temporary substrate by a second transposing head. The micro light emitting elements and the light blocking structures are alternately arranged and fixed on the temporary substrate through the connection layer. The reflectivity of the light shielding layer is greater than the reflectivity of the connecting layer. The Young's modulus of the light shielding layer is larger than that of the connecting layer.
In the method for manufacturing a micro led structure according to an embodiment of the present invention, the step of carrying the light blocking structure on the second transposing head includes forming a light shielding material layer. Forming a light shielding material layer on the light shielding material layer. And performing a monomer process on the light shielding material layer and the light shielding material layer to form a light shielding structure. The matrix of light blocking structures is arranged on a second transpose head.
In the method for manufacturing a micro led structure according to an embodiment of the present invention, the singulation process includes an etching method or a cleaving method.
In the method for manufacturing a micro light emitting diode structure according to an embodiment of the invention, the light blocking structure is transferred onto the temporary substrate by the second transposing head, and then the micro light emitting element is transferred onto the temporary substrate by the first transposing head.
In the method for manufacturing a micro light emitting diode structure according to an embodiment of the present invention, the light blocking structure further includes a plurality of light shielding connection layers. Each light shielding connecting layer is connected with each micro light-emitting element and the light shielding layers positioned on the two opposite sides of each micro light-emitting element.
In the method for manufacturing a micro light emitting diode structure according to an embodiment of the invention, the connection layer is a part of the plurality of fixing structures. The fixing structure comprises a plurality of first fixing structures and a plurality of second fixing structures. Each first fixing structure covers the light shielding layer, extends from the edge of the light shielding layer to cover the edge of the light shielding layer, and is connected to the temporary substrate. A first air gap is formed between the light shielding layer and the temporary substrate. Each second fixing structure covers the micro light-emitting element, extends from the edge of the micro light-emitting element and is connected to the temporary substrate. A second air gap is formed between the micro light-emitting element and the temporary substrate.
In the method for manufacturing a micro light emitting diode structure according to an embodiment of the invention, the micro light emitting element is transferred onto the temporary substrate by the first transposing head, and then the light blocking structure is transferred onto the temporary substrate by the second transposing head. The first height of each light blocking structure is greater than or equal to the second height of each micro-light emitting element.
In view of the above, in the manufacturing process of the micro light emitting diode structure of the present invention, the manufactured light blocking structure and the micro light emitting device are respectively transferred onto the temporary substrate. Therefore, better process yield can be obtained, and the manufactured micro light-emitting diode structure also has better structure reliability. In addition, the structure of the micro light-emitting diode has better display yield.
Drawings
Fig. 1A to fig. 1G are schematic diagrams illustrating a method for fabricating a micro light emitting diode structure according to an embodiment of the invention;
FIGS. 2A-2D are schematic partial cross-sectional views of various micro-LED structures according to various embodiments of the present invention;
fig. 3A to 3H are schematic partial cross-sectional views of various micro light-emitting diode devices according to various embodiments of the invention.
Description of the reference numerals
10, a first transfer head;
20, a second transposition head;
100. 100a, 100b, 100c, 100d are micro light emitting diode structures;
110 temporary substrate;
120. 120b, a micro light-emitting element;
130. 130b, 130c, 130f a light blocking structure;
132. 132b, 132f light shielding layers;
133, a peripheral surface;
133b rough peripheral surface;
132a light shielding material layer;
134. 134f a light shielding layer;
134a layer of light shielding material;
136, a light shielding connecting layer;
140, a connecting layer;
140a, a connecting layer;
140d, a fixed structure;
142a connecting part;
142d is a first fixed structure;
144d, a second fixed structure;
200a, 200b, 200c, 200d, 200e, 200f, 200g, 200h, a micro light emitting diode device;
210: a circuit substrate;
220a, 220d and 220h are connecting layers;
220e, an anisotropic conductive adhesive layer;
222a, 222h, electrically connecting the pads;
222d, a pad connecting part;
224a, 224h are connecting parts;
230a, 230b a light guiding layer;
240: a light conversion layer;
a1, a first air gap;
a2, a second air gap;
c, cutting a line;
e, the extending direction;
g is a gap;
h1: first height;
h2, second height;
h3, third height;
alpha is the angle.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A to fig. 1G are schematic diagrams illustrating a method for manufacturing a micro light emitting diode structure according to an embodiment of the invention. For convenience of explanation, fig. 1B, 1C, and 1E are respectively shown in plan view, and fig. 1A, 1D, 1F, and 1G are respectively shown in partial sectional views.
Referring to fig. 1A, according to the method for manufacturing a micro light emitting diode structure of the present embodiment, first, a first transposing head 10 is provided, wherein a plurality of micro light emitting elements 120 separated from each other are carried on the first transposing head 10. Preferably, the micro light emitting devices 120 may be arranged on the first transfer head 10 in a matrix, but not limited thereto. Here, the Micro light emitting device 120 is, for example, a Micro light emitting diode (Micro LED), wherein the maximum size of the Micro light emitting device 120 is less than or equal to 100 micrometers, and the thickness is less than or equal to 15 micrometers, and the Micro light emitting device can be subsequently integrated and assembled to a heterogeneous integrated system, including a Micro display to a large area display, and any size substrate, but not limited thereto.
Next, referring to fig. 1F, a second transposing head 20 is provided, wherein the second transposing head 20 carries a plurality of light blocking structures 130 separated from each other. Each light blocking structure 130 includes a light shielding layer 132 and a light shielding layer 134 disposed on the light shielding layer 132. In detail, referring to fig. 1B, a light shielding material layer 132a is formed, where the light shielding material layer 132a is a reflective material with a reflectivity of greater than 80%, and the light shielding material layer 132a is, for example, a ceramic material, a metal material, or a colloid containing metal particles, but not limited thereto. The light shielding material layer 132a may also be a light absorbing material, and the light absorption rate is, for example, greater than 80%, but not limited thereto. Next, referring to fig. 1C, a light shielding material layer 134a is formed on the light shielding layer 132a, wherein the light shielding material layer 134a is made of a light absorbing material, the light absorption rate is greater than 80%, and the light shielding material layer 134a is a dark light absorbing structure, including a resin type black structure, a metal black structure, a graphite black structure, carbon black, a nitride combination or an oxide combination, so that light not blocked by the light shielding material layer 132a can be blocked by the light shielding material layer 134a, thereby preventing adjacent micro light emitting devices 120 (see fig. 1G) from affecting each other and generating crosstalk interference (Cross Talk). Here, the step of forming the light shielding material layer 134a is, for example, a coating method or a printing method, but not limited thereto. Then, referring to fig. 1D, a singulation process is performed on the light-shielding material layer 132a and the light-shielding material layer 134a to form a plurality of light-blocking structures 130 along the cutting lines C. Here, the singulation process includes an etching method or a cleaving method, and the thickness of the light shielding layer 134 is smaller than that of the light shielding layer 132. Then, referring to fig. 1F, the light blocking structure 130 is arranged on the second transposing head 20 in a matrix, wherein the light shielding layer 134 is located between the second transposing head 20 and the light shielding layer 132.
Finally, referring to fig. 1A, fig. 1F and fig. 1G, a temporary substrate 110 is provided, wherein the temporary substrate 110 is a wireless substrate such as a plastic substrate, a glass substrate or a sapphire substrate, but not limited thereto. The plurality of micro light-emitting elements 120 are transferred onto the temporary substrate 110 by the first transpose head 10. The plurality of light blocking structures 130 are transferred onto the temporary substrate 110 by the second transpose head 20. It should be noted that, in the present embodiment, the micro light-emitting devices 120 and the light-blocking structures 130 need to be transferred onto the temporary substrate 110 in bulk by means of a secondary bulk transfer, but the order of transferring the micro light-emitting devices 120 and the light-blocking structures 130 onto the temporary substrate 110 is not limited. As shown in fig. 1G, the micro light emitting devices 120 and the light blocking structures 130 are alternately arranged and fixed on the temporary substrate 110 through the connection layer 140. Here, the reflectance of the light shielding layer 132 is greater than that of the connection layer 140, and the young's modulus of the light shielding layer 132 is greater than that of the connection layer 140.
More specifically, the connection layer 140 of the present embodiment is embodied by an organic material, and the micro light emitting device 120 and the light shielding layer 132 of the light blocking structure 130 can be fixed on the temporary substrate 110 through the connection layer 140. Here, the connection layer 140 is a whole layer and continuously covers the temporary substrate 110. In particular, the first height H1 of each light blocking structure 130 is greater than or equal to the second height H2 of each micro-light emitting element 120. Preferably, the first height H1 of each light blocking structure 130 is greater than the second height H2 of each micro light emitting element 120, wherein the ratio of H2/H1 is between 0.5 and 1. If the ratio is too small, the light will be blocked, and the display will have obvious lines. Furthermore, the third height H3 of each light shielding layer 132 is greater than or equal to the second height H2 of each micro light emitting device 120, wherein the ratio of H2/H3 is between 0.8 and 1. If the ratio is too small, the light will be blocked, and the display will have obvious lines. By the difference in height design, the light blocking structure 130 can effectively reflect the side light of the micro light emitting element 120 to the front surface completely without blocking the light. Since the first height H1 of the light-blocking structure 130 is greater than the second height H2 of the micro light-emitting elements 120, the light-blocking structure 130 can be transferred onto the temporary substrate 110 by the second transposing head 20 before the micro light-emitting elements 120 are transferred onto the temporary substrate 110 by the first transposing head 10. That is, after the light-blocking structure 130 is transferred onto the temporary substrate 110, the micro-light-emitting devices 120 are transferred onto the temporary substrate 110, so as to obtain a better process yield.
Structurally, referring to fig. 1G again, the micro light emitting diode structure 100 includes a temporary substrate 110, a plurality of micro light emitting devices 120, a plurality of light blocking structures 130, and a connection layer 140. The micro light emitting device 120 is disposed on the temporary substrate 110. The light blocking structures 130 are disposed on the temporary substrate 110 and are alternately arranged with the micro light emitting devices 120. Each light blocking structure 130 includes a light shielding layer 132 and a light shielding layer 134 disposed on the light shielding layer 132, wherein an edge of the light shielding layer 134 is aligned with an edge of the light shielding layer 132. The micro light emitting devices 120 and the light blocking structure 130 are fixed on the temporary substrate 110 through the connection layer 140. The reflectivity of the light shielding layer 132 is greater than the reflectivity of the connection layer 140, and the reflectivity of the light shielding layer 132 is greater than the reflectivity of the light shielding layer 134, so that the light shielding layers 132 on both sides of the micro light-emitting device 120 can effectively reflect the side light of the micro light-emitting device 120. Here, the connection layer 140 is a complete and continuous adhesive layer, and preferably, the young's modulus of the light shielding layer 132 is greater than the young's modulus of the micro light emitting device 120, the young's modulus of the micro light emitting device 120 is greater than the young's modulus of the light shielding layer 134, and the young's modulus of the light shielding layer 134 is greater than or equal to the young's modulus of the connection layer 140. The smallest young's modulus through the connection layer 140 can act as a buffer when the micro light emitting elements 120 and the light blocking structure 130 are transferred in a large amount.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2A is a schematic partial cross-sectional view of a micro light emitting diode structure according to an embodiment of the invention. Referring to fig. 1G and fig. 2A, the micro led structure 100a of the present embodiment is similar to the micro led structure 100 of fig. 1G, and the difference between the two structures is: the connection layer 140a of the present embodiment is embodied to include a plurality of connection portions 142a separated from each other. The micro light emitting device 120 and the light shielding layer 132 of each light blocking structure 130 are respectively disposed on the connecting portion 142a, and the connecting portion 142a exposes a portion of the temporary substrate 110. Here, the area of the forward projection of the connecting portion 142a on the temporary substrate 110 is larger than the area of the forward projection of the micro light emitting device 120 on the temporary substrate 110 and the area of the forward projection of the light blocking structure 130 on the temporary substrate 110, so that the yield during transferring can be increased.
Fig. 2B is a schematic partial cross-sectional view of a micro light emitting diode structure according to an embodiment of the invention. Referring to fig. 2A and fig. 2B, the micro light emitting diode structure 100B of the present embodiment is similar to the micro light emitting diode structure 100a of fig. 2A, and the difference therebetween is: the light shielding layer 132b of the light blocking structure 130b of the present embodiment has a rough peripheral surface 133b, wherein the rough peripheral surface 133b is formed by, for example, a splitting process, so as to increase reflection. Here, the width of the light shielding layer 132b gradually increases from the light shielding layer 134 to the temporary substrate 110, and the width of each micro-light emitting device 120b gradually increases from the temporary substrate 110 to a direction away from the temporary substrate 110. That is, the cross-sectional shape of the light shielding layer 132b is a regular trapezoid, and the cross-sectional shape of the micro light emitting device 120b is an inverted trapezoid, so that light can be concentrated.
Fig. 2C is a schematic partial cross-sectional view of a micro light emitting diode structure according to an embodiment of the invention. Referring to fig. 1G and fig. 2C, the micro led structure 100C of the present embodiment is similar to the micro led structure 100 of fig. 1G, and the difference between the two structures is: the light blocking structure 130c of the present embodiment further includes a plurality of light shielding connection layers 136. Each light shielding connection layer 136 connects each micro light emitting device 120 and the light shielding layers 132 on two opposite sides of each micro light emitting device 120. That is, the light-shielding connection layer 136 is located under the micro-light-emitting devices 120, so the micro-light-emitting devices 120 must be transferred onto the temporary substrate 110 before the light-blocking structure 130c is transferred onto the temporary substrate 110. That is, after the micro light-emitting elements 120 are transferred onto the temporary substrate 110 by the first transposing head 10, the light-blocking structure 130 is transferred onto the temporary substrate 110 by the second transposing head 20. Here, the light shielding connection layer 136 may be integrally formed with the light shielding layer 132, that is, the light shielding connection layer 136 and the light shielding layer 132 are made of the same material, but not limited thereto.
Fig. 2D is a schematic partial cross-sectional view of a micro light emitting diode structure according to an embodiment of the invention. Referring to fig. 1G and fig. 2D, the micro led structure 100D of the present embodiment is similar to the micro led structure 100 of fig. 1G, and the difference between the two structures is: the connection layer of the present embodiment is embodied as a portion of the plurality of fixing structures 140 d. In detail, the fixing structure 140d includes a plurality of first fixing structures 142d and a plurality of second fixing structures 144 d. Each of the first fixing structures 142d covers the light shielding layer 134, extends from the edge of the light shielding layer 134 to cover the edge of the light shielding layer 132, and is connected to the temporary substrate 110. A first air gap a1 is provided between the light shielding layer 132 and the temporary substrate 110. Each second fixing structure 144d covers the micro light emitting device 120, extends from an edge of the micro light emitting device 120, and is connected to the temporary substrate 110. A second air gap a2 is provided between the micro-light emitting device 120 and the temporary substrate 110. That is, neither the light blocking structure 130 nor the micro light emitting device 120 directly contacts the temporary substrate 110, but indirectly contacts the temporary substrate 110 through a portion of the first fixing structure 142d and a portion of the second fixing structure 144 d.
Preferably, the Young's modulus of the light shielding layer 132 is greater than that of the fixing structure 140d, and the Young's modulus of the fixing structure 140d is greater than that of the light shielding layer 134, so as to provide better protection for the fixing structure 140 d. The material of the fixing structure 140d is, for example, silicon dioxide, silicon nitride, Silicon Oxide Glass (SOG), or other suitable inorganic materials, or alternatively, may be a conductive material, and the fixing structure 140d remaining on the surface of the micro light emitting device 120 after the subsequent transfer may be used as an electrode of a vertical micro device or may be used as a common electrode, which is not limited herein.
Fig. 3A is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A, the micro light emitting diode device 200a of the present embodiment includes a circuit substrate 210, a plurality of micro light emitting elements 120, a plurality of light blocking structures 130, and a connection layer 220 a. Here, the micro light emitting devices 120 and the light blocking structures 130 are transferred from the temporary substrate 110 (see fig. 1G) onto the circuit substrate 210 by a single bulk transfer or a double bulk transfer. The circuit substrate 210 is, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal On Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or other substrates having an operating circuit, and is not limited thereto. The micro light emitting devices 120 and the light blocking structures 130 are disposed on the circuit substrate 210, and the light blocking structures 130 and the micro light emitting devices 120 are alternately arranged. The micro light emitting device 120 is electrically connected to the circuit substrate 210 through the connection layer 220a, and the light blocking structure 130 is fixed on the circuit substrate 210 through the connection layer 220 a.
More specifically, the connection layer 220a of the present embodiment includes a plurality of electrical pads 222a and a plurality of connection portions 224 a. The electrical pads 222a are respectively located between the micro light emitting device 120 and the circuit substrate 210 to electrically connect the micro light emitting device 120 and the circuit substrate 210. The connecting portions 224a are respectively located between the light blocking structure 130 and the circuit substrate 210, and are used for connecting and fixing the light blocking structure 130 on the circuit substrate 210. Here, the material of the electrical pad 222a is different from that of the connection portion 224a, wherein the material of the electrical pad 222a is, for example, a conductive material such as metal or metal oxide, and the material of the connection portion 224a is, for example, an organic material, but not limited thereto.
Here, as shown in fig. 3A, an area of an orthographic projection of each connecting portion 224a on the circuit substrate 210 is larger than an area of an orthographic projection of each light-blocking structure 130 on the circuit substrate 210, so that a better bonding reliability can be obtained. Similarly, the orthographic projection area of each of the electrical pads 222a on the circuit substrate 210 is larger than the orthographic projection area of each of the micro light-emitting devices 120 on the circuit substrate 210, so that the micro light-emitting devices 120 have a larger bonding area and the bonding reliability can be improved. In addition, the young's modulus of the light shielding layer 132 of the embodiment is greater than that of the connection layer 220a, so that the light shielding layer 132 has better buffering effect when being bonded to the connection layer. The light absorption rate of the light shielding layer 134 is greater than the light absorption rate of the light shielding layer 132, and the reflectivity of the light shielding layer 132 is greater than the reflectivity of the light shielding layer 134 and the reflectivity of the connection layer 220a, so that the side light of the micro light emitting devices 120 located at both sides of the light shielding layer 132 can be reflected to the front, and the stray light above the micro light emitting devices 120 can be absorbed to avoid crosstalk interference.
Fig. 3B is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3B and fig. 3A together, the micro led device 200B of the present embodiment is similar to the micro led device 200a of fig. 3B, and the difference therebetween is: the micro light emitting diode device 200b of the present embodiment further includes a plurality of light guiding layers 230a, wherein the light guiding layers 230a are disposed on the light shielding layers 134, and an edge of each light guiding layer 230a is aligned with or smaller than an edge of the corresponding light shielding layer 134. Here, the light guiding layer 230a is the remaining portion of the first fixing structure 142D of fig. 2D transferred to the circuit substrate 210, and can be used to adjust the side light of the micro light emitting device 120, and also can not block the light emitted from the micro light emitting device 120.
Fig. 3C is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3B and fig. 3C, the micro led device 200C of the present embodiment is similar to the micro led device 200B of fig. 3B, and the difference therebetween is: the micro light emitting diode device 200c of the present embodiment further includes a plurality of light guiding layers 230b in addition to the light guiding layer 230a, wherein the light guiding layer 230b is disposed on the micro light emitting element 120, and the edge of the light guiding layer 230b is aligned with or smaller than the edge of the micro light emitting element 120. Here, the light guiding layer 230b is the remaining portion of the second fixing structure 144D of fig. 2D transferred to the circuit substrate 210, and is used for concentrating the forward light of the micro light emitting device 120.
Fig. 3D is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A and fig. 3D, the micro led device 200D of the present embodiment is similar to the micro led device 200a of fig. 3A, and the difference therebetween is: the connection layer 220d of the present embodiment includes a plurality of pad portions 222d, wherein the pad portions 222d are separated from each other and expose a portion of the circuit substrate 210. The light blocking structure 130c further includes a plurality of light shielding connection layers 136, wherein each light shielding connection layer 136 connects each micro light emitting element 120 and the light shielding layers 132 at two opposite sides of each micro light emitting element 120. That is, the micro light emitting device 120 is located above the light shielding connection layer 136, and each pad portion 222d is located between each light shielding connection layer 136 and the circuit substrate 210. Preferably, a circuit, such as a conductive via or a conductive via, can be formed on the light shielding connection layer 136, so that the micro-light emitting device 120 on the light shielding connection layer 136 can be electrically connected to the circuit substrate 210 via the pad portion 222d therebelow. When the light shielding layer 132 is a conductive structure, the vertical micro light emitting device 120 can also be electrically connected to the circuit substrate 210 directly through the light shielding layer 132 and the lower pad portion 222d, so as to increase the transfer bonding yield and the alignment accuracy.
Fig. 3E is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A and fig. 3E, the micro led device 200E of the present embodiment is similar to the micro led device 200a of fig. 3A, and the difference between the two devices is: the connection layer of the embodiment is embodied as an anisotropic conductive adhesive layer 220e, which belongs to the low temperature conductive adhesive layer. During the transfer bonding, the micro light emitting device 120 is electrically connected to the circuit substrate 210 through the conductive particles in the anisotropic conductive adhesive layer 220e, and the micro light emitting device 120 and the light blocking structure 130 are fixed on the circuit substrate 210 through the adhesive in the anisotropic conductive adhesive layer 220e without performing an additional high temperature and high pressure bonding process and alignment accuracy, thereby increasing the transfer bonding yield and the alignment margin.
Fig. 3F is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A and fig. 3F, the micro led device 200F of the present embodiment is similar to the micro led device 200a of fig. 3A, and the difference between the two devices is: each light blocking structure 130f of the present embodiment is inclined at an angle α with respect to the extending direction E of the wiring substrate 210. That is, the light blocking structure 130f including the light shielding layer 132f and the light shielding layer 134f of the present embodiment has an inclination angle, wherein the inclination angle is 90 degrees or less and 45 degrees or more, and speckle among pixels during displaying is reduced by slightly inclining and interleaving. Therefore, the height of each light blocking structure 130f of the present embodiment may not be the same. In addition, the maximum distances d1 and d2 from the micro light emitting devices 120 to the photo resist structures 130f on two opposite sides (e.g., left and right sides) are different.
Fig. 3G is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A and fig. 3G, the micro led device 200G of the present embodiment is similar to the micro led device 200a of fig. 3A, and the difference between the two devices is: in the present embodiment, the micro light emitting diode device 200g further includes a light conversion layer 240, wherein the light conversion layer 240 is connected to the light blocking structure 130 and covers the micro light emitting elements 120, so as to improve the light emitting efficiency of the micro light emitting elements 120 and prevent displacement as a connection during transferring. Here, the light conversion layer 240 is aligned with the outer surface of the light shielding layer 134, but not limited thereto. In addition, a gap G is formed between the light conversion layer 240 and the circuit substrate 210, wherein the gap G may be an air gap, for example, to increase the buffer for overflow during bonding.
Fig. 3H is a schematic partial cross-sectional view of a micro light emitting diode device according to an embodiment of the invention. Referring to fig. 3A and fig. 3H, the micro led device 200H of the present embodiment is similar to the micro led device 200a of fig. 3A, and the difference therebetween is: the connection layer 220h of the present embodiment includes a plurality of electrical pads 222h and a plurality of connection portions 224 h. The electrical pads 222h are respectively located between the micro light emitting device 120 and the circuit substrate 210, and the connecting portions 224h are respectively located between the light blocking structure 130 and the circuit substrate 210. The connecting portion 224h extends to cover the peripheral surface 133 of the light shielding layer 132 of the light blocking structure 130, so as to increase the adhesion between the light blocking structure 130 and the circuit substrate 210.
In summary, in the manufacturing process of the micro led structure of the present invention, the manufactured light blocking structure and the micro light emitting device are transferred onto the temporary substrate respectively. Therefore, better process yield can be obtained, and the manufactured micro light-emitting diode structure also has better structure reliability. In addition, the structure of the micro light-emitting diode has better display yield.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (27)
1. A micro light emitting diode structure, comprising:
a temporary substrate;
a plurality of micro light-emitting elements disposed on the temporary substrate;
a plurality of light blocking structures disposed on the temporary substrate and arranged alternately with the plurality of micro light emitting elements, wherein each of the plurality of light blocking structures comprises a light shielding layer and a light shielding layer disposed on the light shielding layer; and
a connection layer, on which the plurality of micro light-emitting elements and the plurality of light-blocking structures are disposed and fixed on the temporary substrate through the connection layer, wherein a reflectivity of the light shielding layer is greater than a reflectivity of the connection layer, a young's modulus of each of the plurality of micro light-emitting elements is greater than a young's modulus of the light shielding layer, the young's modulus of the light shielding layer is greater than or equal to the young's modulus of the connection layer, and the young's modulus of the light shielding layer is greater than the young's modulus of the connection layer.
2. The led structure of claim 1, wherein the light shielding layer has a reflectivity greater than a reflectivity of the light shielding layer, and the young's modulus of the light shielding layer is greater than the young's modulus of the light shielding layer.
3. The led structure of claim 1, wherein the connection layer comprises a plurality of connection portions separated from each other, the light shielding layer of each of the plurality of light blocking structures and the plurality of micro light emitting elements are respectively disposed on the plurality of connection portions, and the plurality of connection portions expose a portion of the temporary substrate.
4. The structure of claim 1, wherein the connecting layer is part of a plurality of fixed structures, and the Young's modulus of the light shielding layer is greater than the Young's modulus of the fixed structures, and the Young's modulus of the fixed structures is greater than the Young's modulus of the light shielding layer.
5. The structure of claim 4, wherein the plurality of fastening structures comprise a plurality of first fastening structures and a plurality of second fastening structures, each of the plurality of first fastening structures covering the light-shielding layer and extending from an edge of the light-shielding layer to cover an edge of the light-shielding layer and being connected to the temporary substrate with a first air gap therebetween, and each of the plurality of second fastening structures covering the micro light-emitting element and extending from an edge of the micro light-emitting element and being connected to the temporary substrate with a second air gap therebetween.
6. The structure of claim 1, wherein the edge of the light shielding layer is aligned with the edge of the light shielding layer.
7. The led structure of claim 1, wherein the light shielding layer has a width gradually increasing from the light shielding layer toward the temporary substrate, and the width of each of the micro light-emitting devices gradually increases from the temporary substrate toward a direction away from the temporary substrate.
8. The micro light emitting diode structure of claim 1, wherein a first height of each of the plurality of light blocking structures is equal to or greater than a second height of each of the plurality of micro light emitting elements.
9. The structure of claim 8, wherein the third height of each of the plurality of light masks is equal to or greater than the second height of each of the plurality of micro light-emitting elements.
10. The micro light emitting diode structure of claim 1, wherein the plurality of light blocking structures further comprises a plurality of light blocking connection layers, each of the plurality of light blocking connection layers connecting each of the plurality of micro light emitting elements and the light blocking layers on opposite sides of each of the plurality of micro light emitting elements.
11. The micro led structure of claim 1, wherein the light shielding layer has a rough peripheral surface.
12. A micro light emitting diode device, comprising:
a circuit substrate;
a plurality of micro light emitting elements disposed on the circuit substrate;
a plurality of light blocking structures disposed on the circuit substrate and arranged alternately with the plurality of micro light emitting elements, wherein each of the plurality of light blocking structures comprises a light shielding layer and a light shielding layer disposed on the light shielding layer; and
and a connection layer, wherein the plurality of light blocking structures are disposed on and fixed to the circuit substrate via the connection layer, wherein the light shielding layer has a reflectivity greater than that of the connection layer, the Young's modulus of each of the plurality of micro light emitting elements is greater than that of the light shielding layer, the Young's modulus of the light shielding layer is greater than or equal to that of the connection layer, and the Young's modulus of the light shielding layer is greater than that of the connection layer.
13. The micro light-emitting diode device of claim 12, wherein the light shielding layer has a reflectivity greater than a reflectivity of the light shielding layer, and the light shielding layer has a young's modulus greater than a young's modulus of the light shielding layer.
14. The micro light-emitting diode device of claim 12, further comprising:
a plurality of light guide layers at least disposed on the light shielding layer, wherein an edge of each of the plurality of light guide layers is aligned with or smaller than an edge of the corresponding light shielding layer.
15. The micro light-emitting diode device of claim 12, wherein the connection layer comprises a plurality of connection portions respectively located between the plurality of light blocking structures and the circuit substrate, and the Young's modulus of the light shielding layer is greater than the Young's modulus of the connection portions.
16. The micro light-emitting diode device of claim 15, wherein an orthographic area of each of the plurality of connections on the circuit substrate is greater than an orthographic area of each of the plurality of light blocking structures on the circuit substrate.
17. The micro light-emitting diode device of claim 12, wherein the connection layer comprises a plurality of pad portions, and the plurality of light blocking structures further comprises a plurality of light blocking connection layers, each of the plurality of light blocking connection layers connecting each of the plurality of micro light-emitting elements and the light blocking layer on opposite sides of each of the plurality of micro light-emitting elements, and each of the plurality of pad portions is located between each of the plurality of light blocking connection layers and the circuit substrate, the plurality of micro light-emitting elements being electrically connected to the circuit substrate through the plurality of pad portions.
18. The micro light-emitting diode device of claim 12, wherein the connection layer is an anisotropic conductive adhesive layer.
19. The micro light-emitting diode device of claim 12, wherein each of the plurality of light blocking structures is inclined at an angle relative to an extending direction of the wiring substrate, and a maximum pitch of each of the plurality of micro light-emitting elements to the plurality of light blocking structures on opposite sides is different.
20. The micro light-emitting diode device of claim 12, further comprising:
and the light conversion layer is connected with the plurality of light blocking structures and covers the plurality of micro light-emitting elements, wherein a gap is formed between the light conversion layer and the circuit substrate.
21. A manufacturing method of a micro light-emitting diode structure is characterized by comprising the following steps:
providing a first transpose head on which a plurality of micro light-emitting elements separated from each other are carried;
providing a second transposing head carrying a plurality of light blocking structures separated from each other, wherein each of the plurality of light blocking structures comprises a light blocking layer and a light shielding layer disposed over the light blocking layer;
providing a temporary substrate;
transferring the plurality of micro light-emitting elements onto the temporary substrate by the first transfer head; and
transferring the plurality of light blocking structures onto the temporary substrate by the second transposing head,
wherein the plurality of micro light-emitting elements and the plurality of light blocking structures are alternately arranged and fixed on the temporary substrate through a connection layer, and the reflectivity of the light shielding layer is greater than that of the connection layer, and the Young modulus of the light shielding layer is greater than that of the connection layer.
22. The method of claim 21, wherein the step of carrying the plurality of light blocking structures on the second transpose head comprises:
forming a light shielding material layer;
forming a light shielding material layer on the light shielding material layer;
performing a singulation process on the light shielding material layer and the light shielding material layer to form the plurality of light blocking structures; and
arranging the plurality of light blocking structure matrices on the second transpose head.
23. The method of claim 22, wherein the singulation process comprises an etching process or a cleaving process.
24. The method of claim 21, wherein the light-blocking structures are transferred onto the temporary substrate by the second transposing head, and then the micro light-emitting elements are transferred onto the temporary substrate by the first transposing head.
25. The method of claim 24, wherein the plurality of light blocking structures further comprises a plurality of light blocking layers, each of the plurality of light blocking layers connecting each of the plurality of micro light emitting elements and the light blocking layers on opposite sides of each of the plurality of micro light emitting elements.
26. The method as claimed in claim 21, wherein the connecting layer is part of a plurality of fixing structures, the fixing structures include a plurality of first fixing structures and a plurality of second fixing structures, each of the first fixing structures covers the light shielding layer and extends from an edge of the light shielding layer to cover an edge of the light shielding layer and is connected to the temporary substrate, the light shielding layer and the temporary substrate have a first air gap therebetween, and each of the second fixing structures covers the micro light emitting device and extends from an edge of the micro light emitting device and is connected to the temporary substrate, and the micro light emitting device and the temporary substrate have a second air gap therebetween.
27. The method of claim 21, wherein the first transposing head transfers the plurality of micro light-emitting elements onto the temporary substrate, and then the second transposing head transfers the plurality of light blocking structures onto the temporary substrate, wherein a first height of each of the plurality of light blocking structures is greater than or equal to a second height of each of the plurality of micro light-emitting elements.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8417072B2 (en) * | 2010-07-27 | 2013-04-09 | Kabushiki Kaisha Toshiba | Light emitting device and optical transmission system |
| CN103811671A (en) * | 2012-08-17 | 2014-05-21 | 三星显示有限公司 | Light blocking member and display panel including the same |
| CN109950380A (en) * | 2017-12-21 | 2019-06-28 | 财团法人工业技术研究院 | LED package |
| CN110491896A (en) * | 2019-08-16 | 2019-11-22 | 錼创显示科技股份有限公司 | Miniature light-emitting element display device and its manufacturing method |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080001525A1 (en) * | 2006-06-30 | 2008-01-03 | Au Optronics Corporation | Arrangements of color pixels for full color OLED |
| JP2010251360A (en) * | 2009-04-10 | 2010-11-04 | Sony Corp | Method of manufacturing display and display |
| CN103886809B (en) * | 2014-02-21 | 2016-03-23 | 北京京东方光电科技有限公司 | Display packing and display device |
| JP2018060993A (en) * | 2016-09-29 | 2018-04-12 | 東レエンジニアリング株式会社 | Transfer method, mounting method, transfer device, and mounting device |
| CN106783892B (en) * | 2017-02-15 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel and display device |
| CN108630726A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic LED display device |
| CN109389910B (en) * | 2017-08-03 | 2021-06-08 | 英属开曼群岛商錼创科技股份有限公司 | Micro light-emitting diode display panel |
| KR101900925B1 (en) * | 2017-11-20 | 2018-09-21 | 엘지디스플레이 주식회사 | Growth substrate having micro light emitting diode chip and method for manufacturing light emitting diode display device using the same |
| CN107993583B (en) * | 2017-11-27 | 2019-09-17 | 武汉华星光电技术有限公司 | Micro-led display device and preparation method thereof |
| TWI648879B (en) * | 2018-04-11 | 2019-01-21 | 友達光電股份有限公司 | Light-emitting element |
| CN109378370B (en) * | 2018-12-05 | 2020-08-25 | 合肥京东方光电科技有限公司 | Transfer equipment of micro LED, manufacturing system and manufacturing method of display substrate |
| TWI676286B (en) * | 2018-12-05 | 2019-11-01 | 英屬開曼群島商錼創科技股份有限公司 | Micro led display device and manufacturing method thereof |
| CN109599411B (en) * | 2018-12-07 | 2019-09-24 | 广东工业大学 | A kind of controllable dispersion and transfer method for the transfer of Micro-LED flood tide |
| CN110034218B (en) * | 2019-04-19 | 2021-03-12 | 成都辰显光电有限公司 | Miniature LED chip and display panel |
| CN110400861B (en) * | 2019-07-30 | 2020-11-20 | 上海天马有机发光显示技术有限公司 | Preparation method of display panel, display panel and display device |
-
2020
- 2020-05-18 CN CN202010419565.9A patent/CN111430523B/en active Active
- 2020-05-18 TW TW109116346A patent/TWI732555B/en active
- 2020-08-21 TW TW109128512A patent/TWI745039B/en active
- 2020-08-21 CN CN202010849717.9A patent/CN111951699B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8417072B2 (en) * | 2010-07-27 | 2013-04-09 | Kabushiki Kaisha Toshiba | Light emitting device and optical transmission system |
| CN103811671A (en) * | 2012-08-17 | 2014-05-21 | 三星显示有限公司 | Light blocking member and display panel including the same |
| CN109950380A (en) * | 2017-12-21 | 2019-06-28 | 财团法人工业技术研究院 | LED package |
| CN110491896A (en) * | 2019-08-16 | 2019-11-22 | 錼创显示科技股份有限公司 | Miniature light-emitting element display device and its manufacturing method |
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| TW202133429A (en) | 2021-09-01 |
| TWI745039B (en) | 2021-11-01 |
| CN111430523A (en) | 2020-07-17 |
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| CN111951699B (en) | 2022-03-29 |
| TW202133428A (en) | 2021-09-01 |
| TWI732555B (en) | 2021-07-01 |
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