CN105742452A - LED chip of vertical structure, LED surface light source and preparation method thereof - Google Patents
LED chip of vertical structure, LED surface light source and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
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- 206010037660 Pyrexia Diseases 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention relates to an LED surface light source. The LED surface light source comprises at least one LED chip of a vertical structure, and an enveloping layer, wherein two opposite surfaces of the LED chip along the vertical direction are provided with a first electrode layer and a second electrode layer, respectively, the first electrode layer is provided with a first electrode, the second electrode layer is provided with a second electrode, the first electrode is electrically connected with the first electrode layer, the second electrode is electrically connected with the second electrode layer, the enveloping layer covers the LED chip, and the first electrode and the second electrode are separately exposed out of the enveloping layer. The invention also relates to a preparation method of the LED surface light source. By adopting the LED surface light source, a contact resistance between the electrodes and a conductive layer can be avoided, so that the heating phenomenon can be avoided; and in addition, the preparation method of the LED surface light source has the advantages of simple preparation process and high efficiency.
Description
Technical field
The present invention relates to LED technology, particularly to the LED chip of a kind of vertical stratification, LED area light source and preparation method thereof.
Background technology
Flexible surface light source can be attached at the surface of arbitrary shaped body, thus can by indoor to illumination and building wall, furniture and ornament etc. object phase surface, realize the illuminating effect of " seeing that light loses lamp " " illumination combines with art ", the lighting experience of more high-quality is provided for consumer.
LED technology is through development for many years, and technology is more and more ripe, and simultaneously cost is also greatly lowered, it is possible to give full play to its cost and the advantage of scale, it is achieved cost is rationally and the LED flexible surface light source illuminating product of stay in grade.
The preparation method of flexible LED area source of the prior art has multiple.Such as, US Patent No. 8674593B2 discloses preparation method and the flexible LED area source of a kind of flexible LED area source.And specifically disclose light emitting diode (LED) chip with vertical structure is mixed in solvent, form Ink；Then by Ink printing to the substrate having circuit；Element manufacturing prints anode layer, Ink and negative electrode layer successively.In the preparation method of above-mentioned LED area light source, chip is not fixed, its in Ink towards random distribution, when chip printing in the devices time, the P electrode of chip is random distribution upward or down, namely uncertain.And when energising, the chip that only P electrode contacts with anode layer can turn on to be lighted, and the chip being oppositely directed to cannot turn on.
Therefore, there is following major defect in the scheme of above-mentioned patent disclosure: (1), due to chip installation direction random distribution in the devices, from statistical distribution probability, has the chip of 50% to light, other 50% cannot light, thus causing the significant wastage of chip；(2) mode printed cannot ensure the close contact between conductive layer and chip electrode, can form big contact resistance, cause device heating.
Summary of the invention
The technical problem to be solved is: provide the LED chip of a kind of vertical stratification, it is possible to facilitate the P/N electrode layer of LED chip and the connection of wiring board；Further provide for a kind of LED area light source avoiding causing fever phenomenon because forming contact resistance the preparation method that above-mentioned LED area light source is provided.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is:
A kind of LED chip of vertical stratification, described LED chip two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode, described the second electrode lay is provided with the second electrode, described first electrode and the electrical connection of the first electrode layer, described second electrode electrically connects with the second electrode lay.
A kind of LED area light source, LED chip including above-mentioned vertical stratification, also include conductive layer, described conductive layer is respectively arranged at described LED chip two sides vertically, described first electrode exposes the part outside described encapsulated layer and the second electrode expose the part outside described encapsulated layer respectively with described conductive layers make contact.
A kind of preparation method of LED area light source, first the P electrode of the LED chip of the vertical stratification of at least one and N electrode will make projected electrode respectively, then carry out cutting and form one single chip, described one single chip is encapsulated in encapsulating material, then the encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out thinning, until exposing described projected electrode, again the substrate with conductive material is pressed on the two sides of encapsulating material respectively along one single chip vertical direction, makes conductive material contact with described projected electrode.
The beneficial effects of the present invention is:
(1) LED chip of the vertical stratification of the present invention, is electrically connected on the first electrode layer and the second electrode lay and arranges the first electrode and the second electrode, by the first electrode and the second electrode, to realize wiring board and the connection of the first electrode layer, the second electrode lay；
(2) LED area light source of the present invention, by the design of encapsulated layer, it is possible to the arrangement of the LED chip of vertical stratification fixed in advance, on the one hand, according to demand can by LED chip with identical towards setting, it is to avoid the problem of chip waste；On the other hand, the first electrode and the second electrode expose outside described encapsulated layer respectively, and the part that the first electrode and the second electrode expose directly can contact with conductive layer, provide architecture basics for the close contact with conductive layer；
(3) preparation method of the LED area light source of the present invention, first pass through encapsulating material to be encapsulated by one single chip, the arrangement making one single chip is fixed in advance, then the mode adopting pressing makes projected electrode realize close contact with conductive material, avoid the first electrode, between the second electrode and conductive layer, come in contact resistance, and then avoid the generation of fever phenomenon；Additionally, the preparation method of the present invention has the advantage that process is simple and efficiency is high, it is thus achieved that LED area light source there is stay in grade and the rational advantage of cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the LED chip of the vertical stratification of the embodiment of the present invention one；
Fig. 2 is the structural representation of the LED area light source of the embodiment of the present invention two；
Fig. 3 is the structural representation of the LED area light source of the embodiment of the present invention three；
Fig. 4 is the structural representation of the LED area light source of the embodiment of the present invention four.
Label declaration:
1, LED chip；11, the first electrode；12, the second electrode；2, encapsulated layer；3, conductive layer；4, basic unit；41, light conversion particles；42, reflector layer.
Detailed description of the invention
By describing the technology contents of the present invention in detail, being realized purpose and effect, below in conjunction with embodiment and coordinate accompanying drawing to be explained.
The design of most critical of the present invention is in that: arrange the first electrode and the second electrode by being electrically connected on the first electrode layer and the second electrode lay, thus facilitating wiring board and the connection of the first electrode layer, the second electrode lay.
Refer to Fig. 1, a kind of LED chip of vertical stratification, described LED chip 1 two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode 11, described the second electrode lay is provided with the second electrode 12, described first electrode 11 electrically connects with the first electrode layer, and described second electrode 12 electrically connects with the second electrode lay.
A kind of LED area light source, LED chip 1 including above-mentioned vertical stratification, also include conductive layer 3, described conductive layer 3 is respectively arranged at described LED chip 1 two sides vertically, and described first electrode 11 exposes the part outside described encapsulated layer 2 and exposes the part outside described encapsulated layer 2 with the second electrode 12 and contact with described conductive layer 3 respectively.
A kind of preparation method of LED area light source, first the P electrode of the LED chip of the vertical stratification of at least one and N electrode will make projected electrode respectively, then carry out cutting and form one single chip, described one single chip is encapsulated in encapsulating material, then the encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out thinning, until exposing described projected electrode, again the substrate with conductive material is pressed on the two sides of encapsulating material respectively along one single chip vertical direction, makes conductive material contact with described projected electrode.
From the above it can be seen that the beneficial effects of the present invention is:
(1) LED chip of the vertical stratification of the present invention, is electrically connected on the first electrode layer and the second electrode lay and arranges the first electrode and the second electrode, by the first electrode and the second electrode, to realize wiring board and the connection of the first electrode layer, the second electrode lay；
(2) LED area light source of the present invention, by the design of encapsulated layer, it is possible to the arrangement of the LED chip of vertical stratification fixed in advance, on the one hand, according to demand can by LED chip with identical towards setting, it is to avoid the problem of chip waste；On the other hand, the first electrode and the second electrode expose outside described encapsulated layer respectively, and the part that the first electrode and the second electrode expose directly can contact with conductive layer, provide architecture basics for the close contact with conductive layer；
(3) preparation method of the LED area light source of the present invention, first pass through encapsulating material to be encapsulated by one single chip, the arrangement making one single chip is fixed in advance, then the mode adopting pressing makes projected electrode realize close contact with conductive material, avoid the first electrode, between the second electrode and conductive layer, come in contact resistance, and then avoid the generation of fever phenomenon；Additionally, the preparation method of the present invention has the advantage that process is simple and efficiency is high, it is thus achieved that LED area light source there is stay in grade and the rational advantage of cost.
In the LED chip of the vertical stratification of the present invention:
Further, described first electrode 11 and the second electrode 12 are arranged along the vertical direction of described LED chip 1 respectively.
Seen from the above description, it is arranged on the two relative side of LED chip along the vertical direction of described LED chip as a concrete structure example, the first electrode and the second electrode.
Further, also including encapsulated layer 2, described encapsulated layer 2 is coated with at least some of of described first electrode layer and the second electrode lay, described first electrode 11 and the second electrode 12 and exposes respectively outside described encapsulated layer.
Further, the respectively projected electrode of described first electrode 11 and the second electrode 12, the protruding tip position of described first electrode 11 and the second electrode 12 exposes outside described encapsulated layer 2 respectively.
Such as, described first electrode 11 is by outside the one end away from the first electrode layer exposes described encapsulated layer 2, and described second electrode 12 is by outside the one end away from the second electrode lay exposes described encapsulated layer 2.Again such as, described first electrode 11 and the second electrode 12 are completely exposed outside described encapsulated layer 2 respectively.
Seen from the above description, expose in several instantiations outside described encapsulated layer respectively as the first electrode and the second electrode, can be outside design the first electrode starts to expose described encapsulated layer from the one end away from the first electrode layer, outside the second electrode starts to expose described encapsulated layer from the one end away from the second electrode lay；Can also be the first electrode and the second electrode is completely exposed outside described encapsulated layer, can also partly expose outside described encapsulated layer；First electrode and the second electrode can be projected electrode of the prior art, and their protruding tip position exposes outside described encapsulated layer, and the shape of above-mentioned projected electrode can be arbitrary shape, for instance hemispherical etc..First electrode of the present invention and the second electrode expose the structural design outside described encapsulated layer, other specific designs outside above-mentioned several instantiation can also be adopted, as long as making the first electrode and the second electrode expose outside described encapsulated layer, reserving can with the contact position of conductive layers make contact.
In the LED chip of the vertical stratification of the present invention:
When the number of the LED chip of vertical stratification is multiple, between multiple LED chips, interval is arranged, and as concrete example, can be array distribution between multiple LED chips, it is also possible to be distributed for uniform intervals.
The material of encapsulated layer can select all encapsulating materials being suitable for LED chip encapsulating in principle, and encapsulated layer is transparent material, to realize printing opacity；Encapsulated layer specifically can select the transparent polymeric material of silica gel, epoxy resin or PMMA etc..
In the LED area light source of the present invention:
Further, described conductive layer 3 is made up of transparent conductive polymer, and described first electrode 11 and the second electrode 12 are electrically connected with described conductive layer 3 by pressing.
Seen from the above description, conductive layer and the first electrode expose the part outside described encapsulated layer and the second electrode exposes the part close contact outside described encapsulated layer, avoid the first electrode, between the second electrode and conductive layer, come in contact resistance, and then avoid the generation of fever phenomenon.The material of conductive layer can select all materials with conduction property in principle, and conductive layer is transparent material, to realize printing opacity；Such as, transparent conducting polymer.The connection of electrode and conductive layer can be realized by the mode of pressing between conductive layer and two electrodes.
Further, also including basic unit 4, described basic unit 4 is arranged at the conductive layer 3 one side away from described LED chip 1.Being provided with light conversion particles 41 in described basic unit 4, the material of described light conversion particles 41 is fluorescent material.
Seen from the above description, basic unit can be common board structure, it is preferred to flexible base board, and its material can select transparent plastic material.
Being provided with light conversion particles in basic unit, the light sent when LED chip is through light conversion particles, it is possible to converts light into longer wavelength light, blends white light.The material of light conversion particles is fluorescent material, for instance fluorescent material.
Further, one in the basic unit 4 of the basic unit 4 of the first electrode 11 and close second electrode 12 is reflector layer 42.
Seen from the above description, in above-mentioned two basic unit, having one to be set to reflector layer, when the light arrival that LED chip sends is set in the basic unit of reflector layer, reflector layer is by light line reflection, and carries out outgoing via another basic unit direction.One side can be realized and go out the technique effect of light.
In the preparation method of the LED area light source of the present invention:
Further, described one single chip is arranged on support carrier and carries out described encapsulating, after one single chip is thinning, described support carrier is removed.
Further, described thinning employing reactive ion etching, chemical reagent dissolving or cutting process carry out.
Seen from the above description, one single chip can be arranged on support carrier by spacing, support the blue film that carrier can select to commonly use, then supporting on carrier, one single chip is encapsulated, after having encapsulated, then carrier removal will be supported, then carry out thinning, thinning concrete operations and can adopt the methods such as the dissolving of reactive ion etching (RIE), chemical reagent or cutting.Stitching operation can adopt pressing running roller to carry out.
Refer to Fig. 1, embodiments of the invention one are:
A kind of LED chip of the vertical stratification of the present embodiment, LED chip 1 including at least three vertical stratification, described LED chip 1 two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode 11, described the second electrode lay is provided with the second electrode 12, described first electrode 11 electrically connects with the first electrode layer, described second electrode 12 electrically connects with the second electrode lay, the respectively projected electrode of described first electrode 11 and the second electrode 12, and arrange along the vertical direction of described LED chip 1 respectively, also include encapsulated layer 2, encapsulated layer 2 adopts PMMA material.Described encapsulated layer 2 is coated with described LED chip 1, and described first electrode 11 and the second electrode 12 expose outside described encapsulated layer 2 respectively.The protruding tip position of described first electrode 11 and the second electrode 12 exposes outside described encapsulated layer respectively.
Refer to Fig. 2, embodiments of the invention two are:
A kind of LED area light source of the present embodiment, LED chip 1 including at least three vertical stratification, described LED chip 1 two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode 11, described the second electrode lay is provided with the second electrode 12, described first electrode 11 electrically connects with the first electrode layer, described second electrode 12 electrically connects with the second electrode lay, the respectively projected electrode of described first electrode 11 and the second electrode 12, and arrange along the vertical direction of described LED chip 1 respectively, also include encapsulated layer 2, conductive layer 3 and basic unit 4, encapsulated layer 2, conductive layer 3 and basic unit 4 are transparent material, encapsulated layer 2 adopts epoxide resin material, conductive layer 3 is conducting polymer materials, basic unit 4 is plastic material.Described encapsulated layer 2 is coated with described LED chip 1, and described first electrode 11 and the second electrode 12 expose outside described encapsulated layer 2 respectively.The protruding tip position of described first electrode 11 and the second electrode 12 exposes outside described encapsulated layer 2 respectively.Described conductive layer 3 is respectively arranged at described LED chip 1 two sides vertically, and described first electrode 11 exposes the part outside described encapsulated layer 2 and exposes the part outside described encapsulated layer 2 with the second electrode 12 and contact with described conductive layer 3 respectively.Described basic unit 4 is arranged at the conductive layer 3 one side away from described LED chip 1.Described basic unit 4 is flexible base board.
As in figure 2 it is shown, the direction of arrow is the light direction of the LED area light source of the present embodiment in figure.
Refer to Fig. 3, embodiments of the invention three are:
A kind of LED area light source of the present embodiment, LED chip 1 including at least three vertical stratification, described LED chip 1 two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode 11, described the second electrode lay is provided with the second electrode 12, described first electrode 11 electrically connects with the first electrode layer, described second electrode 12 electrically connects with the second electrode lay, the respectively projected electrode of described first electrode 11 and the second electrode 12, and arrange along the vertical direction of described LED chip 1 respectively, also include encapsulated layer 2, conductive layer 3 and basic unit 4, encapsulated layer 2, conductive layer 3 and basic unit 4 are transparent material, encapsulated layer 2 adopts silica gel material, conductive layer 3 is conducting polymer materials, basic unit 4 is plastic material.Described encapsulated layer 2 is coated with the protruding tip position of the first electrode 11 described in described LED chip 1 and the second electrode 12 and exposes respectively outside described encapsulated layer 2.Described conductive layer 3 is respectively arranged at described LED chip 1 two sides vertically, and described first electrode 11 exposes the part outside described encapsulated layer 2 and exposes the part outside described encapsulated layer 2 with the second electrode 12 and contact with described conductive layer 3 respectively.Described basic unit 4 is arranged at the conductive layer 3 one side away from described LED chip 1.Described basic unit 4 is flexible base board, is provided with light conversion particles 41 in flexible base board, and the material of described light conversion particles 41 is fluorescent material.
As it is shown on figure 3, the direction of arrow is the light direction of the LED area light source of the present embodiment in figure.
Refer to Fig. 4, embodiments of the invention four are:
A kind of LED area light source of the present embodiment, LED chip 1 including at least three vertical stratification, described LED chip 1 two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, described first electrode layer is provided with the first electrode 11, described the second electrode lay is provided with the second electrode 12, described first electrode 11 electrically connects with the first electrode layer, described second electrode 12 electrically connects with the second electrode lay, the respectively projected electrode of described first electrode 11 and the second electrode 12, and arrange along the vertical direction of described LED chip 1 respectively, also include encapsulated layer 2, conductive layer 3 and basic unit 4, encapsulated layer 2, conductive layer 3 and basic unit 4 are transparent material, encapsulated layer 2 adopts silica gel material, conductive layer 3 is conducting polymer materials, basic unit 4 is plastic material.Described encapsulated layer 2 is coated with the protruding tip position of the first electrode 11 described in described LED chip 1 and the second electrode 12 and exposes respectively outside described encapsulated layer 2.Described conductive layer 3 is respectively arranged at described LED chip 1 two sides vertically, and described first electrode 11 exposes the part outside described encapsulated layer 2 and exposes the part outside described encapsulated layer 2 with the second electrode 12 and contact with described conductive layer 3 respectively.Described basic unit 4 is arranged at the conductive layer 3 one side away from described LED chip 1.Described basic unit 4 is flexible base board, is provided with light conversion particles 41 in flexible base board, and the material of described light conversion particles 41 is fluorescent material.Basic unit 4 near the second electrode 12 is set to reflector layer 42.
As shown in Figure 4, in figure, the direction of arrow is the light direction of the LED area light source of the present embodiment.
Embodiments of the invention five are:
The preparation method of a kind of LED area light source of the present embodiment, on the epitaxial wafer of the LED chip of vertical stratification, makes projected electrode respectively in the P electrode of LED chips all on whole epitaxial wafer and N electrode；It is then cut into one single chip.LED chip is arranged by the pitch arrays of demand on blue film；Being encapsulated in transparent encapsulated layer by LED chips all on indigo plant film, material is silica gel.After removing blue film, chemical reagent dissolution method is adopted to carry out thinning to encapsulated layer upper and lower surface, to expose the projected electrode of LED chip.Adopt pressing running roller that surface has the flexible base board of transparent polymer conductive layer and the encapsulated layer of LED chip carry out pressing, flexible base board is transparent plastic material, thus encapsulated layer is in centre, upper and lower surface is the flexible base board with transparent polymer conductive layer, and transparent polymer conductive layer is in close contact with projected electrode.So far, it is thus achieved that the LED area light source of the present embodiment.
In sum, LED area light source provided by the invention can avoid coming in contact between electrode and conductive layer resistance, and then avoids the generation of fever phenomenon；Additionally, the preparation method of the LED area light source of the present invention has the advantage that preparation process is simple and efficiency is high.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every equivalents utilizing description of the present invention and accompanying drawing content to make, or directly or indirectly it is used in relevant technical field, all in like manner include in the scope of patent protection of the present invention.
Claims (11)
1. the LED chip of a vertical stratification, described LED chip two opposite faces vertically are respectively equipped with the first electrode layer and the second electrode lay, it is characterized in that, described first electrode layer is provided with the first electrode, described the second electrode lay is provided with the second electrode, described first electrode and the electrical connection of the first electrode layer, described second electrode electrically connects with the second electrode lay.
2. the LED chip of vertical stratification according to claim 1, it is characterised in that described first electrode and the second electrode are arranged along the vertical direction of described LED chip respectively.
3. the LED chip of vertical stratification according to claim 1, it is characterized in that, also including encapsulated layer, described encapsulated layer is coated with described first electrode layer and at least some of of the second electrode lay, described first electrode and the second electrode exposes outside described encapsulated layer respectively.
4. the LED chip of vertical stratification according to claim 3, it is characterised in that the protruding tip position of described first electrode and the second electrode respectively projected electrode, described first electrode and the second electrode exposes outside described encapsulated layer respectively.
5. a LED area light source, it is characterized in that, LED chip including the vertical stratification according to any one of Claims 1-4, also include conductive layer, described conductive layer is respectively arranged at described LED chip two sides vertically, described first electrode exposes the part outside described encapsulated layer and the second electrode expose the part outside described encapsulated layer respectively with described conductive layers make contact.
6. LED area light source according to claim 5, it is characterised in that described conductive layer is made up of transparent conductive polymer, described first electrode and the second electrode are electrically connected with described conductive layer by pressing.
7. LED area light source according to claim 5, it is characterised in that also include basic unit, described basic unit is arranged at the conductive layer one side away from described LED chip, is provided with light conversion particles in described basic unit, and the material of described light conversion particles is fluorescent material.
8. LED area light source according to claim 5, it is characterised in that in the basic unit near the first electrode and the basic unit near the second electrode is reflector layer.
9. the preparation method of a LED area light source, it is characterized in that, first the P electrode of the LED chip of the vertical stratification of at least one and N electrode will make projected electrode respectively, then carry out cutting and form one single chip, described one single chip is encapsulated in encapsulating material, then the encapsulating material on two apparent surfaces of the vertical direction of the one single chip after encapsulating is carried out thinning, until exposing described projected electrode, again the substrate with conductive material is pressed on the two sides of encapsulating material respectively along one single chip vertical direction, conductive material is made to contact with described projected electrode.
10. the preparation method of LED area light source according to claim 9, it is characterised in that described one single chip is arranged on support carrier and carries out described encapsulating, after one single chip is thinning, described support carrier is removed.
11. the preparation method of LED area light source according to claim 9, it is characterised in that described thinning employing reactive ion etching, chemical reagent dissolve or cutting process carries out.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110164853A (en) * | 2019-04-22 | 2019-08-23 | 中山市木林森电子有限公司 | A kind of curved surface LED light source |
| CN113130462A (en) * | 2021-04-13 | 2021-07-16 | 广州市鸿利显示电子有限公司 | Display module and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110164853A (en) * | 2019-04-22 | 2019-08-23 | 中山市木林森电子有限公司 | A kind of curved surface LED light source |
| CN113130462A (en) * | 2021-04-13 | 2021-07-16 | 广州市鸿利显示电子有限公司 | Display module and preparation method thereof |
| CN113130462B (en) * | 2021-04-13 | 2023-08-04 | 广州市鸿利显示电子有限公司 | Preparation method of display module and display module |
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| CN105742452B (en) | 2019-02-22 |
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