CN110993636A - Method and system for transferring micro LED chips in large quantity - Google Patents
Method and system for transferring micro LED chips in large quantity Download PDFInfo
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- CN110993636A CN110993636A CN201911001763.7A CN201911001763A CN110993636A CN 110993636 A CN110993636 A CN 110993636A CN 201911001763 A CN201911001763 A CN 201911001763A CN 110993636 A CN110993636 A CN 110993636A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention discloses a method for transferring a large number of micro LED chips, which comprises the following steps: providing a substrate, wherein a first metal layer is arranged on the surface of the substrate, the first metal layer is made of passivation metal, and the resistivity of the passivation metal is less than or equal to 110n omega-m; a second metal layer is arranged on the bottom surface of the MicroLED chip and is made of a second metal, and the second metal can adsorb negative ions after being irradiated by a UV light source; cleaning the surface ions of the first metal layer by a plasma cleaning machine to make the surface ions carry positive ions; irradiating ultraviolet light on the second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions; and placing the substrate and the MicroLED chip in non-conductive liquid, wherein the MicroLED chip is transferred to the substrate through ion adsorption. The invention realizes mass transfer, and has simple operation, high efficiency and accurate positioning.
Description
Technical Field
The invention relates to the technical field of micro LED chips, in particular to a method and a system for transferring a large number of micro LED chips.
Background
Compared with the existing OLED technology, the MicroLED has higher brightness, better luminous efficiency and lower power consumption. The excellent characteristics of the MicroLED enable the MicroLED to be applied to televisions, iPhones and iPads.
The Display principle of the MicroLED Display is that the LED structure is designed to be thinned, miniaturized and arrayed, and the size of the LED structure is only about 1-10 mu m grade; then, the micro LEDs are transferred to a circuit substrate in batch mode, wherein the substrate can be a hard and soft transparent or opaque substrate; and then, the physical deposition process is utilized to complete the protective layer and the upper electrode, so that the upper substrate can be packaged, and the micro LED display with a simple structure is completed.
The batch type transfer means that three to five hundred or even more LED tiny crystal grains with three primary colors of red, green and blue are uniformly welded on a TFT circuit substrate with the size of a nail cover according to necessary specifications of optics and electrics, and the allowable process failure rate is one tenth of several ten-thousandth. Therefore, one of the core technologies of the micro led is how to implement the batch transfer technology.
The existing transfer technology can not realize batch transfer accurately, for example: in contrast to document 1, publication No. CN109950182A "mass transfer method and mass transfer device for Micro LEDs", the mass transfer method for Micro LEDs includes: providing a Micro LED chip, wherein the cross-sectional shape of the Micro LED chip capable of emitting a first color is different from the cross-sectional shape of a second Micro LED chip capable of emitting a second color; pouring the Micro LED chips on a loading surface of a loading mould at one time, wherein the loading surface is provided with a loading groove, and the loading groove is provided with a first shape matched with the shape of the first Micro LED chip and a second shape matched with the shape of the second Micro LED chip; and vibrating the loading mould, enabling the Micro LED chips to fall into the matched loading groove, and inclining the loading mould to enable the Micro LED chips which do not fall into the loading groove to leave the loading surface.
That is, the comparison document 1 is designed to have different cross-sectional shapes by designing the Micro LED chips of different colors, so that a huge transfer process of the Micro LED chips of various colors can be realized at one time, and the shape of one loading groove on the loading mold is matched with the shape of only one color of Micro LED chip, thereby improving the transfer efficiency by times and ensuring a high transfer yield.
However, this method requires a plurality of additional processes, classifies the micro led chips of different colors, and sets a plurality of different cross-sectional shapes for the micro led chips of different colors, and the loading mold also requires loading grooves of different shapes. The chips and the loading molds in different shapes are arranged, so that time, manpower and material resources are consumed, the feasibility is poor, the operation process is easy to miss, and the transfer yield is low.
For another example: reference 2 is a patent previously filed by the applicant, publication No. CN108767092A "method for batch transfer of micro led chips", and includes: providing a substrate with a through hole; spraying an adsorption liquid on the surface of the substrate; placing a MicroLED chip on the surface of a substrate; enabling the through hole to be in a negative pressure state, and adsorbing the micro LED chip on the through hole; removing the MicroLED chip and the adsorption liquid outside the through hole; removing the adsorbed liquid in the through holes. The through holes in the substrate are in a negative pressure state, and random and scattered micro LED chips are adsorbed on the through holes by using the surface tension of the adsorbed liquid, so that accurate positioning is realized.
However, this method requires spraying the adsorbing liquid and placing the through-holes on the substrate in a negative pressure state, and then removing the adsorbing liquid. Moreover, utilize absorption liquid to shift among the transfer process, under the influence of negative pressure, absorption liquid is difficult to be controlled, leads to the unable accurate location of assurance of micro LED chip.
Disclosure of Invention
The first technical problem to be solved by the present invention is to provide a method for transferring a micro led chip in bulk, which realizes bulk transfer, and has the advantages of simple operation, high efficiency and accurate positioning.
The first technical problem to be solved by the present invention is to provide a system for transferring micro led chips in bulk, which realizes bulk transfer, and has a simple structure, high efficiency and precise positioning.
In order to achieve the technical effect, the invention provides a method for transferring a large number of micro LED chips, which comprises the following steps:
providing a substrate, wherein a first metal layer is arranged on the surface of the substrate, the first metal layer is made of passivation metal, and the resistivity of the passivation metal is less than or equal to 110n omega-m;
a second metal layer is arranged on the bottom surface of the MicroLED chip and is made of a second metal, and the second metal can adsorb negative ions after being irradiated by a UV light source;
cleaning the surface ions of the first metal layer by a plasma cleaning machine to make the surface ions carry positive ions;
irradiating ultraviolet light on the second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions;
and placing the substrate and the MicroLED chip in non-conductive liquid, wherein the MicroLED chip is transferred to the substrate through ion adsorption.
As an improvement of the scheme, the passivation metal is one or a combination of gold, silver, aluminum, copper and platinum;
the second metal is one or a combination of titanium and platinum;
the non-conductive liquid is pure water.
As an improvement of the scheme, the thickness of the second metal layer is 10-100 nm.
As an improvement of the above scheme, the cleaning of the surface ions of the first metal layer by a plasma cleaning machine comprises:
and (3) placing the substrate into a cavity of a plasma cleaning machine, introducing Ar 10-100sccm, adding a positive ion beam, and performing atomic-level cleaning on the surface of the first metal layer for 1-30 minutes.
As an improvement of the above scheme, the irradiation ultraviolet treatment of the second metal layer of the micro led chip includes:
placing the MicroLED chip in first gas, wherein the first gas is CO or O2Or CH4；
And irradiating ultraviolet light to enable the second metal layer to adsorb negative ions in the air, wherein the wavelength of the ultraviolet light is 260-400nm, and the irradiation time is more than or equal to 30 seconds.
As an improvement of the proposal, the substrate is a concave substrate or a convex substrate,
the concave substrate is provided with a plurality of grooves, and the first metal layer is arranged at the bottoms of the grooves;
the convex substrate is provided with a plurality of bulges, and the first metal layer is arranged at the tops of the bulges.
Correspondingly, the invention also discloses a system for transferring the MicroLED chips in large quantity, which comprises:
the surface of the substrate is provided with a first metal layer;
the micro LED chip pretreatment equipment is used for plating a second metal layer on the bottom surface of the micro LED chip;
the plasma cleaning machine is used for cleaning the surface ions of the first metal layer of the substrate to enable the first metal layer to carry positive ions;
the ultraviolet irradiation device is used for irradiating ultraviolet light on the second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions;
and the liquid tank is filled with non-conductive liquid.
As an improvement of the above scheme, the substrate is a concave substrate or a convex substrate;
the concave substrate is provided with a plurality of grooves, and the first metal layer is arranged at the bottoms of the grooves;
the convex substrate is provided with a plurality of bulges, and the first metal layer is arranged at the tops of the bulges.
As an improvement of the scheme, Ar 10-100sccm is introduced into the chamber of the ion cleaning machine.
As an improvement of the scheme, the ultraviolet irradiation device comprises an irradiation chamber and an ultraviolet lamp, the ultraviolet lamp is arranged in the irradiation chamber, the irradiation chamber is filled with first gas, and the first gas is CO or O2Or CH4；
The ultraviolet lamp emits ultraviolet light with the wavelength of 260-400 nm.
The implementation of the invention has the following beneficial effects:
the surface of a substrate is provided with a specific first metal layer, the bottom surface of a micro LED chip is provided with a specific second metal layer, and the first metal layer and the second metal layer are processed to respectively carry positive ions and negative ions. Then in the non-conductive liquid, random and scattered micro LED chips are transferred to the substrate through ion adsorption, so that accurate positioning is realized.
A large number of scattered micro LED chips use the first metal layer on the substrate as positioning points, and are arranged neatly without manual transfer, so that huge transfer is realized, operation is simple, and efficiency is high.
The method has the advantages of simple method, strong feasibility, easy operation and control, and can uniformly distribute positive ions on each element electrode, and the positive ions can be preserved on the surface for a long time to become Au+Or Pt+。
And thirdly, after the UV light source is irradiated by the second metal layer, large-area negative ion carrying can be realized through PT conversion, and a wire is not needed. The method is simple, high in feasibility, easy to operate and control, beneficial to batch processing and high in transfer efficiency.
And (IV) pure water is selected as the non-conducting liquid, so that the cost is low, the environment cannot be polluted, and the recovery and the reprocessing are not needed.
In conclusion, the invention can realize the huge transfer of the MicroLED chip, has simple operation, high efficiency, high success rate up to 99.9 percent and accurate positioning. The system applying the mass transfer method has simple structure and high efficiency, and is beneficial to popularization and use.
Drawings
FIG. 1 is a flow chart of a method of mass transferring MicroLED chips of the present invention;
FIG. 2 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another embodiment of a substrate according to the present invention;
FIG. 4 is a schematic diagram of a MicroLED chip according to the present invention;
FIG. 5 is a schematic diagram of the architecture of the present system for bulk transfer of MicroLED chips;
FIG. 6 is a schematic diagram of the present MicroLED chip in bulk transfer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, the present invention provides a method for bulk transfer of micro led chips, comprising:
s101, providing a substrate, wherein a first metal layer is arranged on the surface of the substrate;
the substrate may be made of glass, metal, or plastic, but is not limited thereto. The surface of base plate is equipped with first metal level, because the micro LED chip finally needs to shift to on the PCB board, therefore the position of the first metal level on the base plate need correspond with the chip welding point on the PCB board.
Preferably, as shown in fig. 2, the substrate 1 is a concave substrate, a plurality of grooves 11 are formed on the concave substrate, and the first metal layer 12 is disposed at the bottom of the grooves 11. The location of the recess 11 on the substrate needs to correspond to the chip solder joint on the PCB board.
The area of the groove is smaller than that of the MicroLED chip. If the area of the groove is larger than that of the chip, the chip can be adsorbed in the groove, and the subsequent chip is not convenient to transfer to the PCB.
Preferably, as shown in fig. 3, the substrate 1 is a convex substrate, a plurality of protrusions 13 are disposed on the convex substrate, and the first metal layer 12 is disposed on the tops of the protrusions 13. The position of the bumps 13 on the substrate needs to correspond to the chip solder joints on the PCB board.
The first metal layer 12 is made of a passivated metal, preferably by evaporation or sputtering.
According to the invention, a specific first metal is selected to prepare a first metal layer, and the first metal needs to simultaneously meet 1 and has metal activity passivation and is not easily oxidized; 2. the conductivity is good; 3. is a metallic solid. Therefore, the first metal is selected from a passivated metal, the resistivity of the passivated metal is less than or equal to 110n omega-m, and if the resistivity of the passivated metal is greater than 110n omega-m, the first metal layer cannot form positive charges capable of meeting the requirement of huge transfer after being processed.
Specifically, the passivation metal is one or a combination of gold, silver, aluminum, copper and platinum, but is not limited thereto. Preferably, the passivation metal is one of gold, silver, aluminum, copper and platinum. More preferably, the passivation metal is one of gold, silver, aluminum and copper.
S102, arranging a second metal layer on the bottom surface of the MicroLED chip;
as shown in fig. 4, the second metal 21 is made of a second metal, and is formed at the bottom of the micro led chip 2, preferably by evaporation or sputtering.
The second metal can adsorb negative ions in the air through irradiation of the UV light source, so that the second metal is negatively charged. Specifically, the second metal is one or a combination of titanium and platinum, but is not limited thereto. Preferably, the second metal is one of titanium and platinum.
The thickness of the second metal layer is preferably 10-100 nm. If the thickness of the second metal layer is less than 10nm, a film is not easy to form on the surface of the MicroLED chip, and the manufacturing is difficult; if the thickness of the second metal layer is greater than 100nm, the micro led chip is too heavy, batch transfer is not easy to perform, and the cost is increased.
The size of the MicroLED chip is 3-50 μm, and the MicroLED chip is in a flip-chip or vertical type. Different varieties of micro LED chips can adapt to the transfer method.
S103, cleaning the surface ions of the first metal layer by using a plasma cleaning machine to enable the surface ions to carry positive ions;
before plasma cleaning, the substrate is required to be deglued, and then ACE, IPA, QDR are sequentially performed, followed by Sin dry. Next, a plasma cleaning is performed, which includes the steps of: and (3) placing the substrate into a cavity of a plasma cleaning machine, introducing Ar 10-100sccm, adding a positive ion beam, and performing atomic-level cleaning on the surface of the first metal layer for 1-30 minutes.
Preferably, the plasma cleaning comprises: and (3) placing the substrate into a cavity of a plasma cleaning machine, introducing Ar of 50-80sccm, adding a positive ion beam, and cleaning the surface of the first metal layer for 5-10 minutes.
The plasma ionization treatment is used for cleaning the surface ions of the first metal layer through a plasma cleaning machine, the method is simple, the feasibility is strong, the operation and the control are easy, and the accurate transfer of batch chips is guaranteed. Moreover, the method is beneficial to batch processing and high in transfer efficiency.
The invention adopts plasma cleaning and uses ion bombardment to lead the surface of the metal to lose charges and further carry positive ions, thus being capable of uniformly distributing the positive ions on each element electrode, leading the positive ions to be preserved for a long time, being suitable for large-area use, being capable of mass production and needing no connecting wires. In mass transfer, if conduction is performed by conduction, the distribution of positive ions will be different to some extent due to the influence of the distance between each element of the connection line and the power line. However, the present application uses the surface ionization method, which can uniformly distribute positive ions on each element electrode, and the positive ions can be preserved on the surface for a long time to become Au+Or Pt+。
S104, irradiating ultraviolet light on a second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions;
the second metal layer to the MicroLED chip is shone ultraviolet ray and is handled, includes:
placing the MicroLED chip in first gas, wherein the first gas is CO or O2Or CH4；
Irradiating ultraviolet light with wavelength of 260-400nm for 30 sec to make the second metal layer adsorb negative ion in air.
Preferably, the first gas is pure gas, CO, O2Or CH4The purity of (2) was 100%. The first gas of the present invention may be a mixed gas of CO and O2Or CH4The concentration of (A) is 45.5% -99.99%.
The micro LED chip is placed in first gas, and negative ions are generated by irradiating ultraviolet light, wherein the principle of a photocatalyst is utilized. When the ultrafine nano-sized titanium dioxide particles are irradiated with ultraviolet rays having a wavelength of 388nm or less, electron-hole pairs, i.e., photo-generated carriers, are generated by excitation due to absorption of light energy inside the ultrafine nano-sized titanium dioxide particles, and then the ultrafine nano-sized titanium dioxide particles rapidly migrate to the surfaces thereof to activate adsorbed oxygen and moisture, thereby generating active free hydroxyl groups (. OH) and active oxygen (. O), and when contaminants and bacteria adsorb the surfaces thereof, a chain degradation reaction occurs. Therefore, the metal surface can adsorb a large amount of negative ions for mass transfer due to the principle. Similarly, when the second metal is platinum, the photocatalyst has better photocatalytic performance, and can also adsorb a large amount of negative ions for mass transfer.
Thus, the second metal layer is in CO, O2Or CH4The large-area negative ions can be carried by irradiating ultraviolet light and converting PT in the gas atmosphere without wires. The method is simple, high in feasibility, easy to operate and control and beneficial to ensuring accurate transfer of chips in batches. Moreover, the method is beneficial to batch processing and high in transfer efficiency.
Moreover, the mode of irradiating the negative ions is different from all LED process modes known by the technical personnel in the field, and the invention has the advantages that a large amount of negative ions with large area can be given at one time, no lead is needed, and the device can not be damaged.
S105, placing the substrate and the MicroLED chip in non-conductive liquid, and transferring the MicroLED chip to the substrate through electric ion adsorption.
The non-conductive liquid is pure water, and the substrate and the MicroLED chip can play a good role in absorbing electric ions in the pure water, so that the MicroLED chip is transferred to the substrate. And the cost is low, the environment is not polluted, and the recovery and the retreatment are not needed.
Correspondingly, as shown in fig. 5 and fig. 6, the present invention also discloses a system 100 for transferring a mass micro led chip, comprising:
the structure comprises a substrate 1, wherein a first metal layer 12 is arranged on the surface of the substrate 1;
the micro LED chip pretreatment device 6 is used for plating a second metal layer 21 on the bottom surface of the micro LED chip 2;
a plasma cleaning machine 3 for cleaning the surface ions of the first metal layer 12 of the substrate 1 to make the first metal layer 12 carry positive ions;
the ultraviolet irradiation device 4 is used for irradiating ultraviolet light on the second metal layer 21 of the MicroLED chip to enable the second metal layer 21 to carry negative ions;
and a liquid tank 5 filled with a non-conductive liquid.
Preferably, as shown in fig. 2, the substrate 1 is a concave substrate, a plurality of grooves 11 are formed on the concave substrate, and the first metal layer 12 is disposed at the bottom of the grooves 11. The location of the recess 11 on the substrate needs to correspond to the chip solder joint on the PCB board.
The area of the groove is smaller than that of the MicroLED chip. If the area of the groove is larger than that of the chip, the chip can be adsorbed in the groove, and the subsequent chip is not convenient to transfer to the PCB.
Preferably, as shown in fig. 3, the substrate 1 is a convex substrate, a plurality of protrusions 13 are disposed on the convex substrate, and the first metal layer 12 is disposed on the tops of the protrusions 13. The position of the bumps 13 on the substrate needs to correspond to the chip solder joints on the PCB board.
As shown in fig. 4, the second metal layer 21 is made of a second metal and is formed at the bottom of the micro led chip 2, preferably by evaporation or sputtering.
The micro led chip pretreatment device 6 is used for plating the second metal layer 21 on the bottom surface of the micro led chip 2, and may be a conventional evaporation device or a sputtering device, but is not limited thereto.
Ar 10-100sccm is introduced into the chamber of the ion cleaning machine 3. And (3) placing the substrate into a cavity of a plasma cleaning machine 3, introducing Ar 10-100sccm, adding a positive ion beam, and performing atomic-level cleaning on the surface of the first metal layer for 1-30 minutes.
The invention adopts plasma cleaning and ion bombardment to lead the surface of the metal to lose charges and further carry positive ions, thus being capable of evenly distributing the positive ions on each element electrode,the positive ions are stored for a long time, are suitable for large-area use, can be produced in batches and do not need to be connected with wires. In mass transfer, if conduction is performed by conduction, the distribution of positive ions will be different to some extent due to the influence of the distance between each element of the connection line and the power line. However, the present application uses the surface ionization method, which can uniformly distribute positive ions on each element electrode, and the positive ions can be preserved on the surface for a long time to become Au+Or Pt+。
The ultraviolet irradiation device 4 comprises an irradiation chamber and an ultraviolet lamp, the ultraviolet lamp is arranged in the irradiation chamber, the irradiation chamber is filled with first gas, and the first gas is CO or O2Or CH4(ii) a The ultraviolet lamp emits ultraviolet light with the wavelength of 260-400 nm.
The second metal layer is between CO and O2Or CH4The large-area negative ions can be carried by irradiating ultraviolet light and converting PT in the gas atmosphere without wires. The method is simple, high in feasibility, easy to operate and control and beneficial to ensuring accurate transfer of chips in batches. Moreover, the method is beneficial to batch processing and high in transfer efficiency. Moreover, the mode of irradiating the negative ions is different from all LED process modes known by the technical personnel in the field, and the invention has the advantages that a large amount of negative ions with large area can be given at one time, no lead is needed, and the device can not be damaged.
In summary, as shown in fig. 6, in the invention, a specific first metal layer is disposed on the surface of the substrate 1, a specific second metal layer is disposed on the bottom surface of the micro led chip 2 by the micro led chip pretreatment device, the first metal layer is processed by the plasma cleaning machine, and the second metal layer is processed by the ultraviolet irradiation system, so that the first metal layer carries positive ions and the second metal layer carries negative ions. Then, in the non-conductive liquid in the liquid tank 5, random and scattered micro LED chips 2 are transferred to the substrate 1 through the ion adsorption, so that accurate positioning is realized. A large number of scattered micro LED chips use the first metal layer on the substrate as positioning points, and are arranged neatly without manual transfer, so that huge transfer is realized, operation is simple, and efficiency is high.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A method of bulk transferring micro led chips, comprising:
providing a substrate, wherein a first metal layer is arranged on the surface of the substrate, the first metal layer is made of passivation metal, and the resistivity of the passivation metal is less than or equal to 110n omega-m;
a second metal layer is arranged on the bottom surface of the MicroLED chip and is made of a second metal, and the second metal can adsorb negative ions after being irradiated by a UV light source;
cleaning the surface ions of the first metal layer by a plasma cleaning machine to make the surface ions carry positive ions;
irradiating ultraviolet light on the second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions;
and placing the substrate and the MicroLED chip in non-conductive liquid, wherein the MicroLED chip is transferred to the substrate through ion adsorption.
2. The method for mass transferring a MicroLED chip according to claim 1, wherein said passivating metal is one or a combination of gold, silver, aluminum, copper, platinum;
the second metal is one or a combination of titanium and platinum;
the non-conductive liquid is pure water.
3. The method for mass transferring a MicroLED chip according to claim 2, wherein said second metal layer has a thickness of 10nm to 100 nm.
4. The method of mass transferring a MicroLED chip as recited in claim 1, wherein the cleaning of the surface ions of the first metal layer by a plasma cleaner comprises:
and (3) placing the substrate into a cavity of a plasma cleaning machine, introducing Ar 10-100sccm, adding a positive ion beam, and performing atomic-level cleaning on the surface of the first metal layer for 1-30 minutes.
5. The method for mass transferring a MicroLED chip as recited in claim 1, wherein the subjecting the second metal layer of the MicroLED chip to an irradiating ultraviolet light comprises:
placing the MicroLED chip in first gas, wherein the first gas is CO or O2Or CH4；
And irradiating ultraviolet light to enable the second metal layer to adsorb negative ions in the air, wherein the wavelength of the ultraviolet light is 260-400nm, and the irradiation time is more than or equal to 30 seconds.
6. The method for bulk transfer of MicroLED chips of claim 1, wherein said substrate is a concave substrate or a convex substrate,
the concave substrate is provided with a plurality of grooves, and the first metal layer is arranged at the bottoms of the grooves;
the convex substrate is provided with a plurality of bulges, and the first metal layer is arranged at the tops of the bulges.
7. A system for bulk transfer of micro led chips, comprising:
the surface of the substrate is provided with a first metal layer;
the micro LED chip pretreatment equipment is used for plating a second metal layer on the bottom surface of the micro LED chip;
the plasma cleaning machine is used for cleaning the surface ions of the first metal layer of the substrate to enable the first metal layer to carry positive ions;
the ultraviolet irradiation device is used for irradiating ultraviolet light on the second metal layer of the MicroLED chip to enable the second metal layer to carry negative ions;
and the liquid tank is filled with non-conductive liquid.
8. The system for mass transfer of MicroLED chips of claim 7, wherein said substrate is a concave substrate or a convex substrate;
the concave substrate is provided with a plurality of grooves, and the first metal layer is arranged at the bottoms of the grooves;
the convex substrate is provided with a plurality of bulges, and the first metal layer is arranged at the tops of the bulges.
9. The system of mass transfer of MicroLED chips of claim 7, wherein Ar of 10 to 100 seem is introduced into the chamber of said ion washer.
10. The system for mass transfer of MicroLED chips of claim 7, wherein said UV illumination system comprises an illumination chamber and a UV lamp, said UV lamp disposed within said illumination chamber, said illumination chamber filled with a first gas, said first gas being CO, O2Or CH4；
The ultraviolet lamp emits ultraviolet light with the wavelength of 260-400 nm.
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| CN113921680A (en) * | 2021-09-30 | 2022-01-11 | Tcl华星光电技术有限公司 | Mass transfer method |
| CN114335286A (en) * | 2020-09-30 | 2022-04-12 | Tcl科技集团股份有限公司 | Bonding method of LED chip |
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