CN109545815B - Mass transfer method of micro light-emitting diode - Google Patents
Mass transfer method of micro light-emitting diode Download PDFInfo
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- CN109545815B CN109545815B CN201811215930.3A CN201811215930A CN109545815B CN 109545815 B CN109545815 B CN 109545815B CN 201811215930 A CN201811215930 A CN 201811215930A CN 109545815 B CN109545815 B CN 109545815B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention discloses a huge transfer method of a micro light-emitting diode, which relates to the field of light-emitting display and comprises the steps of manufacturing a micro light-emitting diode array; coating a conductive adhesive layer on the surface of the miniature light-emitting diode array with P, N poles; cutting the micro light-emitting diode array with the conductive adhesive layer; making the conductive adhesive layer carry electrostatic charge; manufacturing a vibratile insulating platform, and applying an electric field above the vibratile insulating platform for enabling the charged micro light-emitting diode components to be arranged in the same direction; moving the arranged platforms of the micro light-emitting diodes into the optical tweezers array, and capturing the micro light-emitting diode components by the optical tweezers array; moving the optical tweezers array to enable the positions of the micro light-emitting diode components and the driving circuit to correspond one to one; and the P, N poles of the miniature light-emitting diode components are electrically connected with the driving circuit through the conductive adhesive layer by adopting a heating and bonding mode, and each miniature light-emitting diode component is subjected to addressing control and independent driving.
Description
Technical Field
The invention relates to the field of luminous display, in particular to a method for carrying out mass transfer on a micro light-emitting diode by using optical tweezers.
Background
The micro light emitting diode is a display technology which carries out miniaturization and matrixing on a traditional light emitting diode structure and adopts a CMOS integrated circuit process to manufacture a driving circuit so as to realize addressing control and independent driving of each pixel point. Since various indexes such as brightness, life span, contrast, response time, power consumption, viewing angle, and resolution of the micro-led technology are better than those of the LCD and OLED technologies, and in addition, the micro-led technology has advantages of self-luminescence, simple structure, small size, and energy saving, it has been considered as a next generation display technology by many manufacturers to start active layout. One core technical problem faced in the industrialization of micro light-emitting diodes is the mass transfer technology of micro light-emitting diode devices. Since the mass transfer technology requires very high efficiency, yield and transfer accuracy, the mass transfer technology becomes the most challenging in the development process of the micro light emitting diode, and the popularization and use of the micro light emitting diode technology are hindered.
In the prior art, laser induced forward transfer technology is used to solve the unique problem of assembling high resolution displays containing millions of micro-led chips, and in this field, 248nm excimer lasers are also the ideal choice for precise stripping of gan from the original carrier. Due to the laser irradiation, the nitrogen gas generated by the decomposition of gallium nitride expands and creates a mechanical force on the micro light emitting diode structure, pushing the chip from the original carrier towards the receiving substrate. By using large cross-section beams, masks and projection optics in combination, up to thousands of chips can be delivered in parallel with only one laser shot. Yet another way of doing this is to pre-assemble the micro-leds on a temporary carrier wafer or tape using a polymer adhesive. These adhesives are very absorbent to ultraviolet light. Under the irradiation of the excimer laser, the adhesive can generate photochemical decomposition reaction, so that the adhesive is separated from the micro light-emitting diode chip and generates a force for pushing the chip to the receiving substrate. The energy intensity required to irradiate the polymer tape or adhesive may be only one twentieth to one fifth of the energy required for laser lift-off techniques, meaning that only moderate intensity lasers are required to achieve very high processing speeds. However, since the intensity of the excimer laser is difficult to control, the equipment with precisely controllable intensity is very expensive, and the rate and degree of the photochemical decomposition reaction directly affect the process yield and efficiency.
Therefore, those skilled in the art are dedicated to develop a mass transfer method for micro leds, which is simple and practical, and has the advantages of good economical efficiency, high yield, high transfer accuracy, etc.
Disclosure of Invention
In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to design a whole set of mass transfer technology which is simple, practical, economical, efficient, high in yield and high in transfer accuracy.
In order to achieve the above object, the present invention provides a bulk transfer method for micro light emitting diodes, comprising the following steps:
step 1, manufacturing a micro light-emitting diode array;
step 2, coating a conductive adhesive layer on the surface of the micro light-emitting diode array with the P, N poles, and enabling the conductive adhesive layer to be charged with static electricity;
step 3, cutting the micro light-emitting diode array with the conductive adhesive layer;
step 4, enabling the conductive adhesive layer to be charged with static electricity;
step 5, manufacturing a vibratile insulating platform, and applying an electric field above the vibratile insulating platform for enabling the electrified micro light-emitting diode components to be arranged in the same direction; and finally, the conductive adhesive layer is arranged downwards to facilitate the subsequent bonding process.
Step 6, moving the arranged platforms of the micro light-emitting diodes into an optical tweezers array, and capturing the micro light-emitting diode components by using the optical tweezers array;
step 7, moving the optical tweezers array to enable the positions of the miniature light-emitting diode components and the driving circuit to correspond one to one;
and 8, adopting a heating and bonding mode to electrically connect the P, N electrode of the miniature light-emitting diode component with the driving circuit through the conductive adhesive layer, wherein each miniature light-emitting diode component is subjected to addressing control and independent driving.
Preferably, P, N poles of each micro light emitting diode component in the micro light emitting diode array are on the same plane.
Preferably, the P pole of the micro light emitting diode component is arranged at the periphery and the N pole is arranged at the inner side, or the N pole of the micro light emitting diode component is arranged at the periphery and the P pole is arranged at the inner side.
Preferably, the micro light-emitting diode component is of a symmetrical structure.
Preferably, the miniature light emitting diode component is square or rectangular in plan view.
Preferably, the following steps are added after the step 2: and 2.1, drying the conductive adhesive layer to electrify the conductive adhesive layer.
Preferably, the optical tweezer array is formed by converting laser light into parallel light through a collimator and then passing through a microlens array.
Preferably, the collimator and microlens array are used for expansion, control and focusing of the laser light.
Preferably, the following steps are added before the step 7: and 7.0, covering the positions of the micro light-emitting diodes of the same type to be filled with a mould.
Preferably, the oscillatable stage in step 5 is replaced with an insulating liquid.
The mass transfer method of the miniature light-emitting diode adopts the optical tweezers (the laser forms the optical trap through the collimator and the lens array) to pick up and place the miniature light-emitting diode, and has the characteristics of simplicity, practicability, good economy, high efficiency, high yield, high transfer precision and the like.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1 is a micro light emitting diode device array fabricated on a substrate according to a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a micro LED device according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a micro light emitting diode device array according to a preferred embodiment of the present invention;
FIG. 4 shows a cut single micro LED device with a layer of conductive adhesive with charges on the surface according to a preferred embodiment of the present invention;
FIG. 5 is an electric field and oscillating insulating platform for aligning charged micro LED devices according to a preferred embodiment of the present invention;
fig. 6 shows the stage of aligned micro-leds moved into the array of optical tweezers according to a preferred embodiment of the present invention.
Detailed Description
The technical contents of the preferred embodiments of the present invention will be more clearly and easily understood by referring to the drawings attached to the specification. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. The size and thickness of each component shown in the drawings are arbitrarily illustrated, and the present invention is not limited to the size and thickness of each component. The thickness of the components may be exaggerated where appropriate in the figures to improve clarity.
The huge transfer method of the miniature light-emitting diode comprises the following steps of manufacturing a miniature light-emitting diode component array on a substrate as shown in figure 1, and enabling a P pole and an N pole of the miniature light-emitting diode component to be on the same side (as shown in figure 2); meanwhile, the micro light-emitting diode component is of a symmetrical structure (the overlooking shape is square or rectangular), and the structure is favorable for efficiently cutting the micro light-emitting diode component. The P-pole of the micro led device is disposed around and the N-pole is inside (as shown in fig. 2), or the N-pole of the micro led device is disposed around and the P-pole is inside, that is, P, N poles, which are interchangeable.
As shown in fig. 3, a conductive adhesive layer is coated on the surface of the micro light emitting diode device array with P, N electrodes. After the conductive adhesive layer is properly dried, the micro light-emitting diode array is cut, and then the conductive adhesive layer is electrified (electrostatic charge).
As shown in fig. 4, after cutting, the surface of the single micro led device has a conductive adhesive layer with charges.
As shown in fig. 5, an insulating platform capable of oscillating is fabricated, and an electric field is applied above the insulating platform capable of oscillating for aligning the charged micro led devices in the same direction.
As shown in fig. 6, the aligned micro led platforms are moved into the optical tweezers array, and the optical tweezers array is used to capture the micro led devices. The optical tweezers array is formed by converting laser into parallel light through a collimator and then forming a micro lens array, so that individual optical traps can be formed to capture the micro light-emitting diode component. Collimators and microlens arrays are used for expansion, control and focusing of the laser light.
And moving the optical tweezer arrays to enable the positions of the driving circuits of the micro light-emitting diode components to correspond one to one.
The P, N electrode of the micro light-emitting diode component is electrically connected with the driving circuit through the conductive adhesive layer by adopting a heating and bonding mode, so that addressing control and individual driving of each micro light-emitting diode component are realized.
In addition, the micro light-emitting diode component has three colors of RGB, and can be transferred to the driving circuit by the optical tweezers array for three times.
In order to improve the operation efficiency, when the micro light-emitting diode components of a certain color are transferred to the driving circuit, the positions of the micro light-emitting diodes of the same type to be filled can be covered by a mould, and the RGB three types of micro light-emitting diode components can be transferred to the driving circuit in steps. The conductive adhesive layer of the micro light emitting diode can also be electrified after cutting.
In another preferred embodiment of the invention, because of the limited "grip" of the optical tweezers, a large transfer of the corresponding relatively heavy components is placed in the insulating liquid. The purpose of the insulating liquid is to mitigate the effects of gravity, allowing a large transfer of the array of optical tweezers to be performed. Of course, the oscillating platform can also be placed in an insulating liquid so as to obtain a comprehensive effect.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (9)
1. A mass transfer method of a micro light-emitting diode is characterized by comprising the following steps:
step 1, manufacturing a micro light-emitting diode array;
step 2, coating a conductive adhesive layer on the surface of the micro light-emitting diode array with the P, N poles;
step 3, cutting the micro light-emitting diode array with the conductive adhesive layer to obtain a plurality of micro light-emitting diode components;
step 4, enabling the conductive adhesive layer to be charged with static electricity;
step 5, manufacturing a vibratile insulating platform, and applying an electric field above the vibratile insulating platform for enabling the electrified micro light-emitting diode components to be arranged in the same direction;
step 6, moving the arranged platform of the micro light-emitting diode into an optical tweezers array, and capturing the micro light-emitting diode component in insulating liquid by using the optical tweezers array, wherein the optical tweezers array is formed by converting laser into parallel light through a collimator and then passing through a micro lens array;
step 7, moving the optical tweezers array to enable the positions of the miniature light-emitting diode components and the driving circuit to correspond one to one;
and 8, adopting a heating and bonding mode to electrically connect the P, N electrode of the miniature light-emitting diode component with the driving circuit through the conductive adhesive layer, wherein each miniature light-emitting diode component is subjected to addressing control and independent driving.
2. The mass transfer method of micro-leds as claimed in claim 1, wherein P, N poles of each micro-led device in the micro-led array are on the same plane.
3. The mass transfer method for micro light-emitting diodes according to claim 1, wherein the P poles of the micro light-emitting diode devices are disposed at the periphery and the N poles are at the inner side, or the N poles of the micro light-emitting diode devices are disposed at the periphery and the P poles are at the inner side.
4. The mass transfer method of micro-leds as claimed in claim 1, wherein the micro-leds are symmetrical.
5. The mass transfer method of micro-leds as claimed in claim 1, wherein the top view of the micro-leds is square or rectangular.
6. The method of claim 1, wherein the step 2 is followed by the following step
And 2.1, drying the conductive adhesive layer to electrify the conductive adhesive layer.
7. The mass transfer method of micro-leds of claim 1, wherein the collimator and microlens array are used for laser expansion, control and focusing.
8. The method of claim 1, wherein the following steps are added before step 7:
and 7.0, covering the positions of the micro light-emitting diodes of the same type to be filled with a mould.
9. The method according to claim 1, wherein said step 5 of co-aligning is performed with all of said micro light-emitting diodes with their conductive paste layers facing down.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811215930.3A CN109545815B (en) | 2018-10-18 | 2018-10-18 | Mass transfer method of micro light-emitting diode |
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| CN201811215930.3A CN109545815B (en) | 2018-10-18 | 2018-10-18 | Mass transfer method of micro light-emitting diode |
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| CN109545815B true CN109545815B (en) | 2020-11-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110660337B (en) * | 2019-10-15 | 2021-11-23 | 京东方科技集团股份有限公司 | Backboard, display panel and method for processing bad points of micro light-emitting diodes |
| CN111463230A (en) * | 2020-04-13 | 2020-07-28 | 深圳市华星光电半导体显示技术有限公司 | Repairing device for Micro L ED array substrate and repairing method for Micro L ED array substrate |
| CN112992665B (en) * | 2020-05-22 | 2022-02-25 | 重庆康佳光电技术研究院有限公司 | Mass transfer device, system and control method thereof |
| US11721785B2 (en) | 2020-05-22 | 2023-08-08 | Chongqing Konka Photoelectronic Technology Research Institute Co., Ltd. | Mass transfer apparatus, mass transfer system, and control method for mass transfer |
| WO2021253332A1 (en) * | 2020-06-18 | 2021-12-23 | 重庆康佳光电技术研究院有限公司 | Mass transfer device and mass transfer method |
| CN112993120A (en) * | 2020-08-14 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Transfer method and transfer system for micro device |
| CN112635368B (en) * | 2020-12-29 | 2022-12-06 | Tcl华星光电技术有限公司 | Micro light emitting diode transfer equipment and transfer method |
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| CN101378985A (en) * | 2005-01-12 | 2009-03-04 | 纽约大学 | System and method for processing nanowires with holographic optical tweezers |
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