TW201622100A - Package structure for light emitting devices - Google Patents

Package structure for light emitting devices Download PDF

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Publication number
TW201622100A
TW201622100A TW104121269A TW104121269A TW201622100A TW 201622100 A TW201622100 A TW 201622100A TW 104121269 A TW104121269 A TW 104121269A TW 104121269 A TW104121269 A TW 104121269A TW 201622100 A TW201622100 A TW 201622100A
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Taiwan
Prior art keywords
light
package
emitting
emitting elements
package structure
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TW104121269A
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Chinese (zh)
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TWI550825B (en
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黃昱瑋
張道智
沈志明
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財團法人工業技術研究院
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Priority to US14/952,919 priority Critical patent/US20160163940A1/en
Publication of TW201622100A publication Critical patent/TW201622100A/en
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Publication of TWI550825B publication Critical patent/TWI550825B/en
Priority to US15/857,628 priority patent/US20180145236A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Led Device Packages (AREA)

Abstract

A package structure for light emitting devices is provided, wherein an anisotropic conductive film (ACF) and flip-chip bonding technique can be applied for bonding the light emitting device to a carrying substrate. In addition, plural package units are stacked by performing a build-up process or a lamination process to form a full color microdisplay. The package structure for light emitting devices provides simple and quick manufacturing process and suitable for mass production. Furthermore, solutions for optical issues such as light guiding or light mixing are also provided.

Description

發光元件的封裝結構 Light-emitting component packaging structure

本揭露是有關於一種封裝結構,且特別是有關於一種發光元件的封裝結構。 The present disclosure relates to a package structure, and more particularly to a package structure of a light-emitting element.

隨著光電科技的進步,許多光電元件的體積逐漸往小型化發展。近年來,陸續推出各種微顯示器(Micro-display)技術,其中微型發光二極體(micro-LED)顯示器與有機發光二極體(OLED)顯示器均採用主動式發光元件顯示技術。特別是,微型發光二極體顯示器除對比度及能耗方面不遜於有機發光二極體顯示器,在可靠性及壽命亦佔據絕對優勢,有極大潛力成為未來行動通訊電子與物聯網(Internet of Things,IoT)應用穿戴式電子的主流顯示器技術。 With the advancement of optoelectronic technology, the volume of many optoelectronic components has gradually grown to miniaturization. In recent years, various micro-display technologies have been introduced, in which a micro-light-emitting diode (micro-LED) display and an organic light-emitting diode (OLED) display adopt active light-emitting element display technology. In particular, the miniature LED display is inferior to the organic light-emitting diode display in terms of contrast and energy consumption, and has an absolute advantage in reliability and longevity. It has great potential to become the future of mobile communication electronics and the Internet of Things (Internet of Things, IoT) applies mainstream display technology for wearable electronics.

本揭露提供一種發光元件的封裝結構,其適於藉由異方性導電膜(Anisotropic Conductive Film,ACF)與覆晶封裝技術來接 合發光元件與載板,可實現低製程溫度,相容於細線化製程,且封裝製程簡單、快速,適於量產。 The present disclosure provides a package structure of a light-emitting element, which is adapted to be connected by an anisotropic conductive film (ACF) and a flip chip package technology. The light-emitting element and the carrier plate can realize low process temperature, are compatible with the thin line process, and have a simple and fast packaging process, and are suitable for mass production.

本揭露的發光元件的封裝結構包括一載板、多個發光元件以及一異方性導電膜。載板具有一承載面以及配置於承載面上的多個電極接點。所述多個發光元件呈陣列排列而配置於承載面上方。各發光元件包括面向載板的一頂部、相對於頂部的一底部以及位於頂部的一第一電極。異方性導電膜配置於承載面上,且至少覆蓋所述多個電極接點、各發光元件的頂部、第一電極以及各發光元件的部分側面。異方性導電膜包括一絕緣體以及位於絕緣體內的多個導電粒子,且各發光元件的第一電極藉由所述多個導電粒子電性連接至相應的電極接點。 The package structure of the light-emitting element of the present disclosure includes a carrier, a plurality of light-emitting elements, and an anisotropic conductive film. The carrier board has a bearing surface and a plurality of electrode contacts disposed on the bearing surface. The plurality of light emitting elements are arranged in an array and disposed above the carrying surface. Each of the light emitting elements includes a top portion facing the carrier, a bottom portion opposite the top portion, and a first electrode at the top portion. The anisotropic conductive film is disposed on the carrying surface and covers at least the plurality of electrode contacts, the top of each of the light emitting elements, the first electrode, and a portion of the side surface of each of the light emitting elements. The anisotropic conductive film includes an insulator and a plurality of conductive particles located in the insulator, and the first electrode of each of the light emitting elements is electrically connected to the corresponding electrode contact by the plurality of conductive particles.

在本揭露的一實施例中,所述多個發光元件的底部共平面。 In an embodiment of the disclosure, the bottoms of the plurality of light emitting elements are coplanar.

在本揭露的一實施例中,異方性導電膜暴露出各發光元件的底部。 In an embodiment of the present disclosure, the anisotropic conductive film exposes the bottom of each of the light-emitting elements.

在本揭露的一實施例中,異方性導電膜的一第一表面與各發光元件的底部共平面。 In an embodiment of the present disclosure, a first surface of the anisotropic conductive film is coplanar with a bottom of each of the light emitting elements.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一磊晶基板,其配置於異方性導電膜上,且覆蓋各發光元件的底部。 In an embodiment of the present disclosure, the package structure of the light emitting device further includes an epitaxial substrate disposed on the anisotropic conductive film and covering the bottom of each of the light emitting elements.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一線路層,其配置於異方性導電膜與所述多個發光元件上。各 發光元件更包括一第二電極,其位於底部,且線路層串接所述多個發光元件的第二電極。 In an embodiment of the present disclosure, the package structure of the light emitting element further includes a circuit layer disposed on the anisotropic conductive film and the plurality of light emitting elements. each The light emitting element further includes a second electrode located at the bottom, and the circuit layer is connected in series with the second electrode of the plurality of light emitting elements.

在本揭露的一實施例中,各發光元件更包括一第二電極,其位於頂部,且各發光元件的第一電極以及第二電極分別藉由所述多個導電粒子電性連接至相應的電極接點。 In an embodiment of the present disclosure, each of the light-emitting elements further includes a second electrode at the top, and the first electrode and the second electrode of each of the light-emitting elements are electrically connected to the corresponding by the plurality of conductive particles Electrode contacts.

在本揭露的一實施例中,所述多個發光元件包括在同一磊晶基板上製作的多個發光二極體。 In an embodiment of the present disclosure, the plurality of light emitting elements include a plurality of light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,所述多個發光元件包括多個第一色發光二極體以及多個第二色發光二極體。 In an embodiment of the disclosure, the plurality of light emitting elements include a plurality of first color light emitting diodes and a plurality of second color light emitting diodes.

在本揭露的一實施例中,所述多個發光元件包括一第一色條狀發光單元以及一第二色條狀發光單元,其中所述第一色條狀發光單元包括依序連接的多個第一色發光二極體,所述第二色條狀發光單元包括依序連接的多個第二色發光二極體。 In an embodiment of the disclosure, the plurality of light emitting elements comprise a first color strip light emitting unit and a second color strip light emitting unit, wherein the first color strip light emitting unit comprises a plurality of sequentially connected a first color light emitting diode, wherein the second color strip light emitting unit comprises a plurality of second color light emitting diodes connected in sequence.

在本揭露的一實施例中,所述載板包括半導體基板、玻璃基板或線路基板。 In an embodiment of the present disclosure, the carrier board includes a semiconductor substrate, a glass substrate, or a circuit substrate.

本揭露提供另一種可實現全彩顯示的發光元件的封裝結構,其可先藉由覆晶接合技術形成具有發光元件陣列的封裝單元後,再以疊層(lamination)的方式結合多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。本揭露提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,本揭露還可針對導光及混光等光學品質議題提出解決方案。 The present disclosure provides another package structure for a light-emitting element that can realize full-color display. The package unit having the light-emitting element array can be formed by flip-chip bonding technology, and then the plurality of package units are combined in a lamination manner. . For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. The package structure of the light-emitting element proposed by the disclosure has a simple and rapid process and is suitable for mass production. At the same time, the disclosure can also propose solutions for optical quality issues such as light guiding and light mixing.

本揭露提出的發光元件的封裝結構包括一第一封裝單元以及至少一第二封裝單元。第一封裝單元包括一第一載板、多個第一發光元件、多個第一導電件以及一第一包封體。第一載板具有一第一承載面以及配置於第一承載面上的多個第一電極接點。所述多個第一發光元件呈陣列排列而配置於第一承載面上方。各第一發光元件包括面向第一載板的一第一頂部、相對於第一頂部的一第一底部以及位於第一頂部的一第一電極。所述多個第一導電件分別電性連接相應的第一電極與第一電極接點。第一包封體配置於第一承載面上,且至少覆蓋所述多個第一電極接點、各第一發光元件的第一頂部、第一電極以及各第一發光元件的側面。此外,第一包封體的一第一表面與各第一發光元件的第一底部共平面。所述至少一第二封裝單元堆疊於第一封裝單元上。第二封裝單元包括一第二載板、多個第二發光元件、多個第二導電件以及一第二包封體。第二載板具有一第二承載面、相對於第二承載面的一背面以及配置於第二承載面上的多個第二電極接點。所述多個第二發光元件呈陣列排列而配置於第二承載面上方。各第二發光元件包括面向第二載板的一第二頂部、相對於第二頂部的一第二底部以及位於第二頂部的一第三電極。所述多個第二導電件分別電性連接相應的第三電極與第二電極接點。第二包封體配置於第二承載面上,且至少覆蓋所述多個第二電極接點、各第二發光元件的第二頂部、第三電極以及各第二發光元件的側面。此外,第二包封體的一第一表面與各第二發光元件的第二底部共平面。 The package structure of the light emitting device according to the present disclosure includes a first package unit and at least a second package unit. The first package unit includes a first carrier, a plurality of first illuminating elements, a plurality of first conductive members, and a first encapsulant. The first carrier has a first bearing surface and a plurality of first electrode contacts disposed on the first bearing surface. The plurality of first light-emitting elements are arranged in an array and disposed above the first bearing surface. Each of the first illuminating elements includes a first top facing the first carrier, a first bottom opposite the first top, and a first electrode at the first top. The plurality of first conductive members are electrically connected to the corresponding first electrodes and the first electrode contacts, respectively. The first encapsulant is disposed on the first carrying surface and covers at least the plurality of first electrode contacts, the first top of each of the first light emitting elements, the first electrode, and a side surface of each of the first light emitting elements. Furthermore, a first surface of the first encapsulation is coplanar with the first bottom of each of the first illuminating elements. The at least one second package unit is stacked on the first package unit. The second package unit includes a second carrier, a plurality of second illuminating elements, a plurality of second conductive members, and a second encapsulant. The second carrier has a second bearing surface, a back surface opposite to the second bearing surface, and a plurality of second electrode contacts disposed on the second bearing surface. The plurality of second light emitting elements are arranged in an array and disposed above the second bearing surface. Each of the second illuminating elements includes a second top facing the second carrier, a second bottom opposite the second top, and a third electrode at the second top. The plurality of second conductive members are electrically connected to the corresponding third electrode and the second electrode contact, respectively. The second encapsulant is disposed on the second carrying surface and covers at least the plurality of second electrode contacts, the second top portion of each of the second light emitting elements, the third electrode, and a side surface of each of the second light emitting elements. Furthermore, a first surface of the second encapsulation is coplanar with the second bottom of each of the second illuminating elements.

在本揭露的一實施例中,所述第一封裝單元更包括一第一線路層,其配置於第一載板的第一承載面上,且第一線路層電性連接所述多個第一電極接點。 In an embodiment of the disclosure, the first package unit further includes a first circuit layer disposed on the first carrier surface of the first carrier, and the first circuit layer is electrically connected to the plurality of An electrode contact.

在本揭露的一實施例中,第一封裝單元更包括一第二線路層,其配置於第一包封體與所述多個第一發光元件上。各第一發光元件更包括一第二電極,其位於第一底部,且第二線路層串接所述多個第一發光元件的第二電極。 In an embodiment of the disclosure, the first package unit further includes a second circuit layer disposed on the first encapsulant and the plurality of first illuminating elements. Each of the first light emitting elements further includes a second electrode located at the first bottom, and the second circuit layer is connected in series with the second electrodes of the plurality of first light emitting elements.

在本揭露的一實施例中,各第一發光元件更包括一第二電極,其位於第一頂部上,且各第一發光元件的第一電極以及第二電極分別藉由所述多個第一導電件電性連接至相應的第一電極接點。 In an embodiment of the present disclosure, each of the first light-emitting elements further includes a second electrode on the first top, and the first electrode and the second electrode of each of the first light-emitting elements are respectively A conductive member is electrically connected to the corresponding first electrode contact.

在本揭露的一實施例中,所述多個第一發光元件包括在同一磊晶基板上製作的多個第一色發光二極體。 In an embodiment of the disclosure, the plurality of first light emitting elements comprise a plurality of first color light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,第二封裝單元更包括一第三線路層,其配置於第二載板的第二承載面上,且第三線路層電性連接所述多個第二電極接點。 In an embodiment of the disclosure, the second package unit further includes a third circuit layer disposed on the second carrier surface of the second carrier, and the third circuit layer is electrically connected to the plurality of second electrodes contact.

在本揭露的一實施例中,第二封裝單元更包括一第四線路層,其配置於第二包封體與所述多個第二發光元件上。各第二發光元件更包括一第四電極,其位於第二底部,且第四線路層串接所述多個第二發光元件的第四電極。 In an embodiment of the disclosure, the second package unit further includes a fourth circuit layer disposed on the second encapsulant and the plurality of second illuminating elements. Each of the second light emitting elements further includes a fourth electrode located at the second bottom, and the fourth circuit layer is connected in series with the fourth electrode of the plurality of second light emitting elements.

在本揭露的一實施例中,各第二發光元件更包括一第四電極,其位於第二頂部,且各第二發光元件的第三電極以及第四 電極分別藉由所述多個第二導電件電性連接至相應的第二電極接點。 In an embodiment of the present disclosure, each of the second light emitting elements further includes a fourth electrode located at the second top, and the third electrode and the fourth of each of the second light emitting elements The electrodes are electrically connected to the corresponding second electrode contacts by the plurality of second conductive members, respectively.

在本揭露的一實施例中,所述多個第二發光元件包括在同一磊晶基板上製作的多個第二色發光二極體。 In an embodiment of the disclosure, the plurality of second light emitting elements comprise a plurality of second color light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,所述至少一第二封裝單元包括相互堆疊的兩個第二封裝單元,其中一個第二封裝單元的所述多個第二發光元件包括在同一磊晶基板上製作的多個第二色發光二極體,而另一個第二封裝單元的所述多個第二發光元件包括在同一磊晶基板上製作的多個第三色發光二極體。 In an embodiment of the disclosure, the at least one second package unit includes two second package units stacked on each other, wherein the plurality of second light-emitting elements of one second package unit are included on the same epitaxial substrate. The plurality of second color light emitting diodes are fabricated, and the plurality of second light emitting elements of the other second package unit comprise a plurality of third color light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個導光結構,分別配置於相應的第一發光元件以及第二發光元件上方。各導光結構的一端連接相應的第一發光元件的第一底部或第二發光元件的第二底部,並且貫穿上層的至少一個第二封裝單元。 In an embodiment of the present disclosure, the package structure of the light emitting element further includes a plurality of light guiding structures respectively disposed above the corresponding first light emitting element and the second light emitting element. One end of each light guiding structure is connected to the first bottom of the corresponding first light emitting element or the second bottom of the second light emitting element, and penetrates at least one second package unit of the upper layer.

在本揭露的一實施例中,所述導光結構包括一通孔,暴露出相應的第一發光元件的第一底部或第二發光元件的第二底部。 In an embodiment of the present disclosure, the light guiding structure includes a through hole exposing a first bottom of the corresponding first light emitting element or a second bottom of the second light emitting element.

在本揭露的一實施例中,各導光結構包括通孔以及填入通孔的一透光材料,且透光材料的折射率大於第二包封體的折射率。 In an embodiment of the present disclosure, each of the light guiding structures includes a through hole and a light transmissive material filled in the through hole, and the refractive index of the light transmissive material is greater than the refractive index of the second encapsulant.

在本揭露的一實施例中,各導光結構包括通孔以及覆蓋通孔內壁的一反射材料。 In an embodiment of the present disclosure, each light guiding structure includes a through hole and a reflective material covering the inner wall of the through hole.

在本揭露的一實施例中,所述發光元件的封裝結構更包括至少一黏著層,配置於相鄰的第一封裝單元與第二封裝單元之間,或相鄰的兩第二封裝單元之間。 In an embodiment of the disclosure, the package structure of the light-emitting element further includes at least one adhesive layer disposed between the adjacent first package unit and the second package unit, or two adjacent second package units. between.

在本揭露的一實施例中,第一封裝單元更包括一第一線路層,配置於第一載板的第一承載面上。第一線路層電性連接所述多個第一電極接點,且第一包封體暴露出第一載板的外圍以及部分的第一線路層。第二封裝單元更包括一第三線路層,配置於第二載板的第二承載面上。第三線路層電性連接所述多個第二電極接點,且第二包封體暴露出第二載板的外圍以及部分的第三線路層。所述發光元件的封裝結構更包括多條導線,電性連接於第一線路層與第三線路層之間,或電性連接於相應的兩第三線路層之間。 In an embodiment of the disclosure, the first package unit further includes a first circuit layer disposed on the first carrier surface of the first carrier. The first circuit layer is electrically connected to the plurality of first electrode contacts, and the first encapsulant exposes a periphery of the first carrier and a portion of the first circuit layer. The second package unit further includes a third circuit layer disposed on the second carrier surface of the second carrier. The third circuit layer is electrically connected to the plurality of second electrode contacts, and the second encapsulant exposes a periphery of the second carrier and a portion of the third circuit layer. The package structure of the light-emitting element further includes a plurality of wires electrically connected between the first circuit layer and the third circuit layer or electrically connected between the corresponding two third circuit layers.

在本揭露的一實施例中,第一封裝單元更包括一第一線路層,配置於第一載板的第一承載面上,且第一線路層電性連接所述多個第一電極接點。第二封裝單元更包括一第三線路層,配置於第二載板的第二承載面上,且第三線路層電性連接所述多個第二電極接點。所述封裝結構更包括多個導通孔,各導通孔貫穿所述至少一第二封裝單元的第二載板,並且電性連接於相應的第三線路層與其下方的第一發光元件之間,或電性連接於相應的第三線路層與其下方的第二發光元件之間。 In an embodiment of the present disclosure, the first package unit further includes a first circuit layer disposed on the first carrier surface of the first carrier, and the first circuit layer is electrically connected to the plurality of first electrodes point. The second package unit further includes a third circuit layer disposed on the second carrier surface of the second carrier, and the third circuit layer is electrically connected to the plurality of second electrode contacts. The package structure further includes a plurality of via holes, each of the via holes penetrating through the second carrier of the at least one second package unit, and electrically connected between the corresponding third circuit layer and the first light-emitting element below it. Or electrically connected between the corresponding third circuit layer and the second light-emitting element below it.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一黑矩陣層,配置於所述至少一第二封裝單元之上,且黑矩陣 層具有多個透光區,分別對應於所述多個第一發光元件以及所述多個第二發光元件。 In an embodiment of the disclosure, the package structure of the light emitting device further includes a black matrix layer disposed on the at least one second package unit and the black matrix The layer has a plurality of light transmissive regions corresponding to the plurality of first light emitting elements and the plurality of second light emitting elements, respectively.

在本揭露的一實施例中,所述多個第一發光元件以及所述多個第二發光元件在第一承載面上的垂直投影不相互重疊,且排列為一面陣列。 In an embodiment of the present disclosure, the vertical projections of the plurality of first light-emitting elements and the plurality of second light-emitting elements on the first bearing surface do not overlap each other and are arranged in an array on one side.

在本揭露的一實施例中,第二載板的背面具有多個光學微結構。 In an embodiment of the present disclosure, the back side of the second carrier has a plurality of optical microstructures.

在本揭露的一實施例中,所述多個光學微結構包括多個微透鏡或多個光調製圖案。 In an embodiment of the disclosure, the plurality of optical microstructures comprise a plurality of microlenses or a plurality of light modulation patterns.

在本揭露的一實施例中,第一載板包括半導體基板、玻璃基板或線路基板。 In an embodiment of the present disclosure, the first carrier includes a semiconductor substrate, a glass substrate, or a wiring substrate.

在本揭露的一實施例中,第二載板包括透光基板。 In an embodiment of the present disclosure, the second carrier includes a light transmissive substrate.

在本揭露的一實施例中,第二載板的厚度小於第一載板的厚度。 In an embodiment of the present disclosure, the thickness of the second carrier is less than the thickness of the first carrier.

在本揭露的一實施例中,第一包封體以及所述多個第一導電件分別為一第一異方性導電膜的一第一絕緣體以及位於第一絕緣體內的多個第一導電粒子,而第二包封體以及所述多個第二導電件分別為一第二異方性導電膜的一第二絕緣體以及位於第二絕緣體內的多個第二導電粒子。 In an embodiment of the present disclosure, the first encapsulant and the plurality of first conductive members are respectively a first insulator of a first anisotropic conductive film and a plurality of first conductive layers located in the first insulator And the second encapsulant and the plurality of second conductive members are respectively a second insulator of a second anisotropic conductive film and a plurality of second conductive particles located in the second insulator.

在本揭露的一實施例中,所述多個第一導電件包括多個第一導電凸塊,而所述多個第二導電件包括多個第二導電凸塊。 In an embodiment of the present disclosure, the plurality of first conductive members include a plurality of first conductive bumps, and the plurality of second conductive members include a plurality of second conductive bumps.

在本揭露的一實施例中,所述發光元件的封裝結構更包 括一散熱片,配置於第一載板的一背面。 In an embodiment of the disclosure, the package structure of the light emitting component is further included. A heat sink is disposed on a back surface of the first carrier.

本揭露提供另一種可實現全彩顯示的發光元件的封裝結構,其藉由覆晶接合技術搭配增層(build-up)法,形成具有發光元件陣列且相互堆疊的多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。本揭露提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,本揭露還可針對導光及混光等光學品質議題提出解決方案。 The present disclosure provides another package structure of a light-emitting element capable of real-color display, which is formed by a flip-chip bonding technique and a build-up method to form a plurality of package units having an array of light-emitting elements and stacked on each other. For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. The package structure of the light-emitting element proposed by the disclosure has a simple and rapid process and is suitable for mass production. At the same time, the disclosure can also propose solutions for optical quality issues such as light guiding and light mixing.

本揭露提出的發光元件的封裝結構包括一載板、多個封裝單元以及一內連線結構。載板具有一承載面。所述多個封裝單元依序堆疊於承載面上,且各封裝單元包括一包封體、多個發光元件以及多個導電凸塊。包封體具有一第一表面以及相對的一第二表面,其中上層的包封體以第二表面接合至下層的另一封裝單元的包封體的第一表面。所述多個發光元件呈陣列排列而埋入包封體的第一表面。各發光元件包括面向載板的一頂部、相對於頂部的一底部以及位於頂部的一第一電極,且包封體的第一表面與各發光元件的底部共平面。所述多個導電凸塊埋入包封體的第二表面。內連線結構位於所述多個封裝單元的包封體內,且內連線結構包括多個第一線路層以及多個導通孔。所述多個第一線路層配置於相鄰的兩包封體之間或是相鄰的載板與包封體之間,並且分別藉由導電凸塊電性連接至相應的發光元件。所述多個導通孔貫穿相應的包封體,並且電性連接於相應的第一線路層之間。 The package structure of the light-emitting element proposed by the present disclosure includes a carrier, a plurality of package units, and an interconnect structure. The carrier has a bearing surface. The plurality of package units are sequentially stacked on the carrying surface, and each of the package units includes an envelope, a plurality of light emitting elements, and a plurality of conductive bumps. The encapsulant has a first surface and an opposite second surface, wherein the encapsulant of the upper layer is bonded to the first surface of the encapsulation of another encapsulation unit of the lower layer with the second surface. The plurality of light emitting elements are arranged in an array and buried in the first surface of the encapsulation. Each of the light-emitting elements includes a top portion facing the carrier, a bottom portion opposite to the top portion, and a first electrode at the top portion, and the first surface of the envelope body is coplanar with the bottom of each of the light-emitting elements. The plurality of conductive bumps are buried in the second surface of the encapsulation. The interconnect structure is located in the encapsulation of the plurality of package units, and the interconnect structure includes a plurality of first circuit layers and a plurality of via holes. The plurality of first circuit layers are disposed between the adjacent two encapsulants or between the adjacent carrier and the encapsulant, and are electrically connected to the corresponding light-emitting elements respectively by the conductive bumps. The plurality of via holes extend through the respective encapsulants and are electrically connected between the respective first circuit layers.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個第二線路層以及至少一絕緣層。所述多個第二線路層分別配置於該些包封體的第一表面上。各發光元件更包括一第二電極,其位於發光元件的底部,且第二線路層串接所述多個發光元件的第二電極。所述至少一絕緣層配置於相鄰的兩包封體之間,用以隔絕相應的第二線路層與內連線結構。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a plurality of second circuit layers and at least one insulating layer. The plurality of second circuit layers are respectively disposed on the first surfaces of the encapsulants. Each of the light emitting elements further includes a second electrode located at a bottom of the light emitting element, and the second circuit layer is connected in series with the second electrode of the plurality of light emitting elements. The at least one insulating layer is disposed between the adjacent two encapsulants for isolating the corresponding second circuit layer and the interconnect structure.

在本揭露的一實施例中,各發光元件更包括一第二電極,位於發光元件的頂部,且各發光元件的第一電極以及第二電極分別電性連接至相應的導電凸塊。 In an embodiment of the present disclosure, each of the light-emitting elements further includes a second electrode located at the top of the light-emitting element, and the first electrode and the second electrode of each of the light-emitting elements are electrically connected to the corresponding conductive bumps, respectively.

在本揭露的一實施例中,各封裝單元的所述多個發光元件包括在同一磊晶基板上製作的多個發光二極體。 In an embodiment of the disclosure, the plurality of light emitting elements of each package unit includes a plurality of light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,不同封裝單元的所述多個發光元件適於發出不同顏色的光線。 In an embodiment of the present disclosure, the plurality of light emitting elements of different package units are adapted to emit light of different colors.

在本揭露的一實施例中,所述多個封裝單元包括相互堆疊的一第一封裝單元、一第二封裝單元以及一第三封裝單元。第一封裝單元的所述多個發光元件包括在同一磊晶基板上製作的多個第一色發光二極體。第二封裝單元的所述多個發光元件包括在另一磊晶基板上製作的多個第二色發光二極體。第三封裝單元的所述多個發光元件包括在又一磊晶基板上製作的多個第三色發光二極體。 In an embodiment of the disclosure, the plurality of package units include a first package unit, a second package unit, and a third package unit stacked on each other. The plurality of light emitting elements of the first package unit include a plurality of first color light emitting diodes fabricated on the same epitaxial substrate. The plurality of light emitting elements of the second package unit include a plurality of second color light emitting diodes fabricated on another epitaxial substrate. The plurality of light emitting elements of the third package unit include a plurality of third color light emitting diodes fabricated on a further epitaxial substrate.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個導光結構,分別配置於相應的發光元件上方。各導光結構 的一端連接相應的發光元件的底部,並且貫穿上層的至少一個封裝單元。 In an embodiment of the present disclosure, the package structure of the light emitting element further includes a plurality of light guiding structures respectively disposed above the corresponding light emitting elements. Light guiding structure One end is connected to the bottom of the corresponding light-emitting element and penetrates at least one package unit of the upper layer.

在本揭露的一實施例中,各導光結構包括一通孔,暴露出相應的發光元件的底部。 In an embodiment of the present disclosure, each of the light guiding structures includes a through hole to expose a bottom of the corresponding light emitting element.

在本揭露的一實施例中,各導光結構包括通孔以及填入通孔的一透光材料,且透光材料的折射率大於包封體的折射率。 In an embodiment of the present disclosure, each of the light guiding structures includes a through hole and a light transmissive material filled in the through hole, and the refractive index of the light transmissive material is greater than the refractive index of the encapsulant.

在本揭露的一實施例中,各導光結構包括通孔以及覆蓋通孔內壁的一反射材料。 In an embodiment of the present disclosure, each light guiding structure includes a through hole and a reflective material covering the inner wall of the through hole.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一披覆層,配置於所述多個封裝單元之上,且各導光結構更貫穿批覆層。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a cladding layer disposed on the plurality of package units, and each light guiding structure further penetrates the batch layer.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一黑矩陣層,配置於所述多個封裝單元之上,且黑矩陣層具有多個透光區,分別對應於所述多個發光元件。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a black matrix layer disposed on the plurality of package units, and the black matrix layer has a plurality of light transmissive regions corresponding to the A plurality of light emitting elements.

在本揭露的一實施例中,所述多個發光元件在承載面上的垂直投影不相互重疊,且排列為一面陣列。 In an embodiment of the present disclosure, the vertical projections of the plurality of light-emitting elements on the bearing surface do not overlap each other and are arranged in an array on one side.

在本揭露的一實施例中,載板包括半導體基板、玻璃基板或線路基板。 In an embodiment of the present disclosure, the carrier board includes a semiconductor substrate, a glass substrate, or a wiring substrate.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一散熱片,配置於載板的一背面。 In an embodiment of the present disclosure, the package structure of the light emitting element further includes a heat sink disposed on a back surface of the carrier.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一磊晶基板,配置於最上層的封裝單元上,且覆蓋封裝單元的 包封體的第一表面以及所述多個發光元件的底部。 In an embodiment of the disclosure, the package structure of the light emitting device further includes an epitaxial substrate disposed on the uppermost package unit and covering the package unit. a first surface of the encapsulant and a bottom of the plurality of light emitting elements.

本揭露提供又一種可實現全彩顯示的發光元件的封裝結構,其可先藉由覆晶接合技術形成具有發光元件陣列的封裝單元後,再以疊層(lamination)的方式結合多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。各封裝單元本身具有內連線結構,並且藉由內連線結構相互電性連接。本揭露提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,本揭露還可針對導光及混光等光學品質議題提出解決方案。 The present disclosure provides a package structure of a light-emitting element that can realize full-color display. The package unit having the light-emitting element array can be formed by flip chip bonding technology, and then multiple package units are combined in a lamination manner. . For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. Each package unit itself has an interconnect structure and is electrically connected to each other by an interconnect structure. The package structure of the light-emitting element proposed by the disclosure has a simple and rapid process and is suitable for mass production. At the same time, the disclosure can also propose solutions for optical quality issues such as light guiding and light mixing.

本揭露提出的發光元件的封裝結構包括多個封裝單元、多個第一導電凸塊以及一黏著層。所述多個封裝單元相互堆疊,且各封裝單元包括一包封體、多個發光元件以及一線路結構。包封體具有一第一表面以及相對的一第二表面,其中上層的包封體以第一表面接合至下層的另一封裝單元的包封體的第二表面。所述多個發光元件呈陣列排列而埋入包封體的第一表面。各發光元件包括一頂部、相對於頂部的一底部以及位於頂部的一第一電極,且包封體的第一表面與各發光元件的底部共平面。線路結構配置於包封體內或包封體的第二表面上,並且電性連接至相應的第一電極。所述多個第一導電凸塊配置於相鄰的兩封裝單元之間,並且電性連接兩封裝單元的線路結構。黏著層配置於相鄰的兩封裝單元之間,並且包覆第一導電凸塊。 The package structure of the light-emitting element proposed by the present disclosure includes a plurality of package units, a plurality of first conductive bumps, and an adhesive layer. The plurality of package units are stacked on each other, and each package unit includes an envelope, a plurality of light emitting elements, and a line structure. The encapsulant has a first surface and an opposite second surface, wherein the encapsulant of the upper layer is bonded to the second surface of the encapsulation of another encapsulation unit of the lower layer with the first surface. The plurality of light emitting elements are arranged in an array and buried in the first surface of the encapsulation. Each of the light-emitting elements includes a top portion, a bottom portion opposite to the top portion, and a first electrode at the top portion, and the first surface of the envelope body is coplanar with the bottom of each of the light-emitting elements. The circuit structure is disposed on the second surface of the encapsulation body or the encapsulation body and electrically connected to the corresponding first electrode. The plurality of first conductive bumps are disposed between two adjacent package units and electrically connected to the circuit structure of the two package units. The adhesive layer is disposed between the adjacent two package units and covers the first conductive bumps.

在本揭露的一實施例中,所述發光元件的封裝結構更包 括一載板,承載相互堆疊的所述多個封裝單元,且各包封體的第二表面朝向載板,其中最下層的包封體的線路結構電性連接至載板。 In an embodiment of the disclosure, the package structure of the light emitting component is further included. A carrier board is disposed to carry the plurality of package units stacked on each other, and a second surface of each package body faces the carrier board, wherein a line structure of the lowermost package body is electrically connected to the carrier board.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個第二導電凸塊,配置於載板與最下層的封裝單元之間,用以將封裝單元的線路結構電性連接至載板。 In an embodiment of the present disclosure, the package structure of the light-emitting element further includes a plurality of second conductive bumps disposed between the carrier and the lowermost package unit for electrically connecting the circuit structure of the package unit. To the carrier board.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一載板,承載相互堆疊的所述多個封裝單元,且各包封體的第一表面朝向載板,其中最下層的包封體的線路結構電性連接至載板。 In an embodiment of the present disclosure, the package structure of the light-emitting element further includes a carrier plate carrying the plurality of package units stacked on each other, and the first surface of each package body faces the carrier board, wherein the lowermost layer The wiring structure of the encapsulation is electrically connected to the carrier.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個第二導電凸塊,配置於載板與最下層的封裝單元之間,用以將封裝單元的線路結構電性連接至載板。 In an embodiment of the present disclosure, the package structure of the light-emitting element further includes a plurality of second conductive bumps disposed between the carrier and the lowermost package unit for electrically connecting the circuit structure of the package unit. To the carrier board.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一磊晶基板,承載相互堆疊的所述多個封裝單元,且最下層的封裝單元的包封體的第一表面貼合磊晶基板。 In an embodiment of the present disclosure, the package structure of the light emitting element further includes an epitaxial substrate carrying the plurality of package units stacked on each other, and the first surface of the encapsulation of the lowermost package unit is bonded Epitaxial substrate.

在本揭露的一實施例中,各發光元件更包括一第二電極,位於發光元件的底部,並且電性連接至相應的線路結構。 In an embodiment of the present disclosure, each of the light emitting elements further includes a second electrode located at the bottom of the light emitting element and electrically connected to the corresponding line structure.

在本揭露的一實施例中,各發光元件更包括一第二電極,位於發光元件的頂部,並且電性連接至相應的線路結構。 In an embodiment of the present disclosure, each of the light emitting elements further includes a second electrode located at the top of the light emitting element and electrically connected to the corresponding line structure.

在本揭露的一實施例中,各封裝單元的所述多個發光元件包括在同一磊晶基板上製作的多個發光二極體。 In an embodiment of the disclosure, the plurality of light emitting elements of each package unit includes a plurality of light emitting diodes fabricated on the same epitaxial substrate.

在本揭露的一實施例中,不同封裝單元的所述多個發光元件適於發出不同顏色的光線。 In an embodiment of the present disclosure, the plurality of light emitting elements of different package units are adapted to emit light of different colors.

在本揭露的一實施例中,所述多個封裝單元包括相互堆疊的一第一封裝單元、一第二封裝單元以及一第三封裝單元,其中第一封裝單元的所述多個發光元件包括在同一磊晶基板上製作的多個第一色發光二極體,第二封裝單元的所述多個發光元件包括在另一磊晶基板上製作的多個第二色發光二極體,第三封裝單元的所述多個發光元件包括在又一磊晶基板上製作的多個第三色發光二極體。 In an embodiment of the disclosure, the plurality of package units include a first package unit, a second package unit, and a third package unit stacked on each other, wherein the plurality of light emitting elements of the first package unit include a plurality of first color light emitting diodes fabricated on the same epitaxial substrate, the plurality of light emitting elements of the second package unit comprising a plurality of second color light emitting diodes fabricated on another epitaxial substrate, The plurality of light emitting elements of the three package unit include a plurality of third color light emitting diodes fabricated on a further epitaxial substrate.

在本揭露的一實施例中,所述發光元件的封裝結構更包括多個導光結構。各發光元件具有一出光方向,且各導光結構的一端連接相應的發光元件,並且貫穿出光方向上的至少一個封裝單元。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a plurality of light guiding structures. Each of the light-emitting elements has a light-emitting direction, and one end of each light-conducting structure is connected to the corresponding light-emitting element and penetrates at least one package unit in the light-emitting direction.

在本揭露的一實施例中,各發光元件由頂部出光,且各導光結構的一端連接相應的發光元件的頂部。 In an embodiment of the present disclosure, each of the light-emitting elements emits light from the top, and one end of each light-conducting structure is connected to the top of the corresponding light-emitting element.

在本揭露的一實施例中,各發光元件由底部出光,且各導光結構的一端連接相應的發光元件的底部。 In an embodiment of the present disclosure, each of the light-emitting elements emits light from the bottom, and one end of each light-guiding structure is connected to the bottom of the corresponding light-emitting element.

在本揭露的一實施例中,各導光結構包括一通孔,暴露出相應的發光元件。 In an embodiment of the present disclosure, each light guiding structure includes a through hole to expose a corresponding light emitting element.

在本揭露的一實施例中,各導光結構包括通孔以及填入通孔的一透光材料,且透光材料的折射率大於包封體的折射率。 In an embodiment of the present disclosure, each of the light guiding structures includes a through hole and a light transmissive material filled in the through hole, and the refractive index of the light transmissive material is greater than the refractive index of the encapsulant.

在本揭露的一實施例中,各導光結構包括通孔以及覆蓋 通孔內壁的一反射材料。 In an embodiment of the disclosure, each light guiding structure includes a through hole and a cover a reflective material on the inner wall of the through hole.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一披覆層,配置於所述多個封裝單元之上,且各導光結構更貫穿批覆層。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a cladding layer disposed on the plurality of package units, and each light guiding structure further penetrates the batch layer.

在本揭露的一實施例中,所述發光元件的封裝結構更包括一黑矩陣層,配置於所述多個封裝單元之上,且黑矩陣層具有多個透光區,分別對應於所述多個發光元件。 In an embodiment of the disclosure, the package structure of the light emitting element further includes a black matrix layer disposed on the plurality of package units, and the black matrix layer has a plurality of light transmissive regions corresponding to the A plurality of light emitting elements.

在本揭露的一實施例中,所述多個發光元件在承載面上的垂直投影不相互重疊,且排列為一面陣列。 In an embodiment of the present disclosure, the vertical projections of the plurality of light-emitting elements on the bearing surface do not overlap each other and are arranged in an array on one side.

在本揭露的一實施例中,載板包括半導體基板、玻璃基板或線路基板。 In an embodiment of the present disclosure, the carrier board includes a semiconductor substrate, a glass substrate, or a wiring substrate.

在本揭露的一實施例中,各發光元件更包括一絕緣層,位於發光元件的底部。 In an embodiment of the present disclosure, each of the light-emitting elements further includes an insulating layer at the bottom of the light-emitting element.

為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

100、300、400、500、800、1000、1100、1200、1300、1400、1500、1600、1700、1800、1900、2000、2100、2200、2500、2600、2700、2800、2900、3000、3100、3200、3300、3600、3700、3800、3900、4000、4100、4200、4300、4400、4500‧‧‧封裝結構 100, 300, 400, 500, 800, 1000, 1100, 1200, 1300, 1400, 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2500, 2600, 2700, 2800, 2900, 3000, 3100, 3200, 3300, 3600, 3700, 3800, 3900, 4000, 4100, 4200, 4300, 4400, 4500 ‧ ‧ package structure

110、610‧‧‧載板 110, 610‧‧‧ carrier board

112‧‧‧承載面 112‧‧‧ bearing surface

114、614‧‧‧電極接點 114, 614‧‧‧ electrode contacts

120、622、624、626‧‧‧發光元件 120, 622, 624, 626‧ ‧ luminescent components

122‧‧‧發光元件的頂部 122‧‧‧Top of the light-emitting element

124‧‧‧發光元件的底部 124‧‧‧Bottom of the light-emitting element

126‧‧‧第一電極 126‧‧‧first electrode

128‧‧‧第二電極 128‧‧‧second electrode

129‧‧‧發光元件的側面 129‧‧‧Side side of the light-emitting element

130‧‧‧異方性導電膜 130‧‧‧ anisotropic conductive film

130a‧‧‧異方性導電膜的第一表面 130a‧‧‧The first surface of the anisotropic conductive film

132‧‧‧絕緣體 132‧‧‧Insulator

134‧‧‧導電粒子 134‧‧‧ conductive particles

140‧‧‧磊晶基板 140‧‧‧ epitaxial substrate

150‧‧‧線路層 150‧‧‧circuit layer

660‧‧‧載具 660‧‧‧ Vehicles

662‧‧‧載具的表面 662‧‧‧ Surface of the vehicle

664‧‧‧凹槽 664‧‧‧ Groove

670‧‧‧離型層 670‧‧‧ release layer

702‧‧‧晶圓 702‧‧‧ wafer

710‧‧‧第一色條狀發光單元 710‧‧‧First color strip light unit

712‧‧‧第一色發光二極體 712‧‧‧First color LED

720‧‧‧第二色條狀發光單元 720‧‧‧Second color strip light unit

722‧‧‧第二色發光二極體 722‧‧‧Second color light-emitting diode

730‧‧‧第三色條狀發光單元 730‧‧‧The third color strip light unit

732‧‧‧第三色發光二極體 732‧‧‧Third-color light-emitting diode

801‧‧‧第一封裝單元 801‧‧‧First package unit

802、803‧‧‧第二封裝單元 802, 803‧‧‧ second package unit

810-1‧‧‧第一載板 810-1‧‧‧First carrier board

810-2、810-3‧‧‧第二載板 810-2, 810-3‧‧‧ second carrier

812-1‧‧‧第一承載面 812-1‧‧‧First bearing surface

812-2、812-3‧‧‧第二承載面 812-2, 812-3‧‧‧ second bearing surface

814-2、814-3‧‧‧第二載板的背面 814-2, 814-3‧‧‧ back of the second carrier

816-1‧‧‧第一電極接點 816-1‧‧‧First electrode contact

816-2、816-3‧‧‧第二電極接點 816-2, 816-3‧‧‧ second electrode contacts

820-1‧‧‧第一發光元件 820-1‧‧‧First light-emitting element

820-2、820-3‧‧‧第二發光元件 820-2, 820-3‧‧‧ second light-emitting element

822-1‧‧‧第一發光元件的第一頂部 822-1‧‧‧The first top of the first illuminating element

822-2、822-3‧‧‧第二發光元件的第二頂部 822-2, 822-3‧‧‧ second top of the second illuminating element

824-1‧‧‧第一發光元件的第一底部 824-1‧‧‧The first bottom of the first illuminating element

824-2、824-3‧‧‧第二發光元件的第二底部 824-2, 824-3‧‧‧ second bottom of the second illuminating element

826-1‧‧‧第一電極 826-1‧‧‧First electrode

826-2、826-3‧‧‧第三電極 826-2, 826-3‧‧‧ third electrode

828-1‧‧‧第二電極 828-1‧‧‧Second electrode

828-2、828-3‧‧‧第四電極 828-2, 828-3‧‧‧ fourth electrode

829-1‧‧‧第一發光元件的側面 829-1‧‧‧Side side of the first illuminating element

829-2、829-3‧‧‧第二發光元件的側面 829-2, 829-3‧‧‧ side of the second illuminating element

830-1‧‧‧第一導電件 830-1‧‧‧First conductive parts

830-2、830-3‧‧‧第二導電件 830-2, 830-3‧‧‧ second conductive parts

840-1‧‧‧第一包封體 840-1‧‧‧First Envelope

842-1‧‧‧第一包封體的一第一表面 842-1‧‧‧ a first surface of the first envelope

840-2、840-3‧‧‧第二包封體 840-2, 840-3‧‧‧Second Envelope

842-2、842-3‧‧‧第二包封體的一第一表面 842-2, 842-3‧‧‧ a first surface of the second envelope

862-1‧‧‧第一線路層 862-1‧‧‧First circuit layer

862-2、862-3‧‧‧第三線路層 862-2, 862-3‧‧‧ third circuit layer

B‧‧‧藍光 B‧‧‧Blue

G‧‧‧綠光 G‧‧‧Green Light

R‧‧‧紅光 R‧‧‧Red Light

1010‧‧‧通孔 1010‧‧‧through hole

1020‧‧‧高折射率的透光材料 1020‧‧‧High refractive index light transmissive material

1030‧‧‧反射材料 1030‧‧‧Reflecting materials

1310、1320‧‧‧黏著層 1310, 1320‧‧‧ adhesive layer

1510‧‧‧導線 1510‧‧‧Wire

1610‧‧‧導通孔 1610‧‧‧through holes

1710‧‧‧黑矩陣層 1710‧‧‧Black matrix layer

1712‧‧‧透光區 1712‧‧‧Transparent area

1810‧‧‧第二線路層 1810‧‧‧Second circuit layer

1820‧‧‧第四線路層 1820‧‧‧ fourth circuit layer

2010‧‧‧光學微結構 2010‧‧‧Optical microstructure

2110‧‧‧散熱片 2110‧‧‧ Heat sink

2202‧‧‧封裝單元 2202‧‧‧Package unit

2202-1‧‧‧第一封裝單元 2202-1‧‧‧First package unit

2202-2‧‧‧第二封裝單元 2202-2‧‧‧Second package unit

2202-3‧‧‧第三封裝單元 2202-3‧‧‧The third package unit

2210‧‧‧載板 2210‧‧‧ Carrier Board

2212‧‧‧承載面 2212‧‧‧ bearing surface

2214‧‧‧載板的背面 2214‧‧‧Back of the carrier board

2220、2220-1、2220-2、2220-3‧‧‧發光元件 2220, 2220-1, 2220-2, 2220-3‧‧‧Lighting elements

2221-1、2221-2、2221-3‧‧‧磊晶基板 2221-1, 2221-2, 2221-3‧‧‧ epitaxial substrate

2222、2222-1、2222-2、2222-3‧‧‧發光元件的頂部 2222, 2222-1, 2222-2, 2222-3‧‧‧ top of the illuminating element

2224、2224-1、2224-2、2224-3‧‧‧發光元件的底部 2224, 2224-1, 2242-2, 2224-3‧‧‧ bottom of the light-emitting element

2226、2226-1、2226-2、2226-3‧‧‧第一電極 2226, 2226-1, 2226-2, 2226-3‧‧‧ first electrode

2228-1、2228-2、2228-3‧‧‧第二電極 2228-1, 2228-2, 2228-3‧‧‧ second electrode

2230、2230-1、2230-2、2230-3‧‧‧導電凸塊 2230, 2230-1, 2230-2, 2230-3‧‧‧ conductive bumps

2240、2240-1、2240-2、2240-3‧‧‧包封體 2240, 2240-1, 2240-2, 2240-3‧‧‧ Encapsulation

2242‧‧‧包封體的第一表面 2242‧‧‧ The first surface of the enclosure

2244‧‧‧包封體的第二表面 2244‧‧‧Second surface of the enclosure

2250‧‧‧內連線結構 2250‧‧‧Inline structure

2252、2252-1、2252-2、2252-3‧‧‧第一線路層 2252, 2252-1, 2252-2, 2252-3‧‧‧ first line layer

2254、2254-1、2254-2‧‧‧導通孔 2254, 2254-1, 2254-2‧‧‧ vias

2256-1、2256-2、2256-3‧‧‧第二線路層 2256-1, 2256-2, 2256-3‧‧‧ second circuit layer

2510‧‧‧通孔 2510‧‧‧through hole

2520‧‧‧高折射率的透光材料 2520‧‧‧High refractive index light transmissive material

2530‧‧‧反射材料 2530‧‧‧Reflecting materials

2810‧‧‧披覆層 2810‧‧‧coating

2910‧‧‧黑矩陣層 2910‧‧‧Black matrix layer

2912‧‧‧透光區 2912‧‧‧Transparent area

3010、3020‧‧‧絕緣層 3010, 3020‧‧‧Insulation

3210‧‧‧散熱片 3210‧‧‧ Heat sink

3302‧‧‧封裝單元 3302‧‧‧Package unit

3302-1‧‧‧第一封裝單元 3302-1‧‧‧First package unit

3302-2‧‧‧第二封裝單元 3302-2‧‧‧Second package unit

3302-3‧‧‧第三封裝單元 3302-3‧‧‧The third package unit

3305‧‧‧絕緣層 3305‧‧‧Insulation

3310‧‧‧載板 3310‧‧‧ Carrier Board

3320、3320-1、3320-2、3320-3‧‧‧發光元件 3320, 3320-1, 3320-2, 3320-3‧‧‧Lighting elements

3321-1‧‧‧磊晶基板 3321-1‧‧‧ epitaxial substrate

3322、3322-1、3322-2、3322-3‧‧‧發光元件的頂部 3322, 3322-1, 3322-2, 3322-3‧‧‧ top of the light-emitting element

3324、3324-1、3324-2、3324-3‧‧‧發光元件的底部 3324, 3324-1, 3234-2, 3324-3‧‧‧ bottom of the light-emitting element

3326-1、3326-2、3326-3‧‧‧第一電極 3326-1, 3326-2, 3326-3‧‧‧ first electrode

3328-1、3328-2、3328-3‧‧‧第二電極 3328-1, 3328-2, 3328-3‧‧‧ second electrode

3340、3340-1、3340-2、3340-3‧‧‧包封體 3340, 3340-1, 3340-2, 3340-3‧‧‧ Encapsulation

3342‧‧‧包封體的第一表面 3342‧‧‧ First surface of the enclosure

3344、3344-1‧‧‧包封體的第二表面 3344, 3344-1‧‧‧ second surface of the enclosure

3349-1‧‧‧通孔 3349-1‧‧‧through hole

3350‧‧‧線路結構 3350‧‧‧Line structure

3360‧‧‧第一導電凸塊 3360‧‧‧First conductive bump

3370‧‧‧黏著層 3370‧‧‧Adhesive layer

3380‧‧‧第二導電凸塊 3380‧‧‧Second conductive bump

4010、4110‧‧‧通孔 4010, 4110‧‧‧through holes

4020‧‧‧透光材料 4020‧‧‧Lighting material

4030‧‧‧反射材料 4030‧‧‧Reflecting materials

4410‧‧‧披覆層 4410‧‧‧coating

4510‧‧‧黑矩陣層 4510‧‧‧Black matrix layer

圖1繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 1 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖2A~2D繪示圖1之封裝結構的封裝製程。 2A-2D illustrate a packaging process of the package structure of FIG. 1.

圖3繪示依照本揭露之一實施例的一種發光元件的封裝結 構。 FIG. 3 illustrates a package junction of a light emitting device according to an embodiment of the present disclosure. Structure.

圖4繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 4 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖5繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 5 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖6A~6H繪示依照本揭露之一實施例的一種發光元件的封裝製程。 6A-6H illustrate a packaging process of a light emitting device according to an embodiment of the present disclosure.

圖7繪示依照本揭露之一實施例對晶圓進行單體化製程以形成條狀發光單元。 FIG. 7 illustrates a singulation process of a wafer to form a strip-shaped light-emitting unit in accordance with an embodiment of the present disclosure.

圖8繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構。 FIG. 8 illustrates a package structure of a light-emitting element that can realize full color display according to an embodiment of the present disclosure.

圖9A~9C分別繪示圖8之封裝結構的發光元件在平面上的垂直投影。 9A-9C are vertical projections of the light-emitting elements of the package structure of FIG. 8 on a plane, respectively.

圖10繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 10 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖11繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 11 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖12繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 12 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖13繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 13 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖14繪示依照本揭露之一實施例的一種發光元件的封裝結 構。 FIG. 14 illustrates a package junction of a light emitting device according to an embodiment of the present disclosure. Structure.

圖15為依照本揭露之一實施例的一種發光元件的封裝結構的局部示意圖。 FIG. 15 is a partial schematic view showing a package structure of a light emitting device according to an embodiment of the present disclosure.

圖16繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 16 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖17繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 17 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖18繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 18 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖19繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 19 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖20繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 20 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖21繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 21 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖22繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構。 FIG. 22 illustrates a package structure of a light-emitting element that can realize full-color display according to an embodiment of the present disclosure.

圖23A~23G繪示圖22之封裝結構的封裝製程。 23A-23G illustrate a packaging process of the package structure of FIG. 22.

圖24A~24C分別繪示圖22之封裝結構的發光元件在平面上的垂直投影。 24A-24C are vertical projections of the light-emitting elements of the package structure of FIG. 22 on a plane, respectively.

圖25繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 25 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖26繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 26 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖27繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 27 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖28繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 28 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖29繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 29 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖30繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 30 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖31繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 31 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖32繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 32 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖33繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構。 FIG. 33 illustrates a package structure of a light-emitting element that can realize full color display according to an embodiment of the present disclosure.

圖34A~34G繪示圖33之封裝結構的封裝製程。 34A to 34G illustrate a packaging process of the package structure of FIG.

圖35A~35C分別繪示圖33的封裝結構的發光元件在平面上的垂直投影。 35A to 35C respectively illustrate vertical projections of the light-emitting elements of the package structure of FIG. 33 on a plane.

圖36繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 36 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖37繪示依照本揭露之一實施例的一種發光元件的封裝結 構。 FIG. 37 illustrates a package junction of a light emitting device according to an embodiment of the present disclosure. Structure.

圖38繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 38 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖39繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 39 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖40繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 40 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖41繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 41 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖42繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 42 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖43繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 43 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖44繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 44 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖45繪示依照本揭露之一實施例的一種發光元件的封裝結構。 FIG. 45 illustrates a package structure of a light emitting device according to an embodiment of the present disclosure.

圖1繪示依照本揭露之一實施例的一種發光元件的封裝結構100。在本實施例中,藉由異方性導電膜與覆晶封裝技術來接合發光元件與載板,以實現低製程溫度,相容於細線化製程,且 封裝製程簡單、快速,適於量產。 FIG. 1 illustrates a package structure 100 of a light emitting device in accordance with an embodiment of the present disclosure. In this embodiment, the light-emitting element and the carrier are bonded by an anisotropic conductive film and a flip chip packaging technology to achieve a low process temperature, which is compatible with the thin line process, and The packaging process is simple and fast, and is suitable for mass production.

如圖1所示,封裝結構100包括一載板110、多個發光元件120以及一異方性導電膜130。載板110具有一承載面112以及配置於承載面112上的多個電極接點114。在此,載板110例如是半導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片(Drive IC)。 As shown in FIG. 1 , the package structure 100 includes a carrier 110 , a plurality of light emitting elements 120 , and an anisotropic conductive film 130 . The carrier 110 has a carrying surface 112 and a plurality of electrode contacts 114 disposed on the carrying surface 112. Here, the carrier 110 is, for example, a semiconductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving IC including an electronic circuit.

發光元件120呈陣列排列而配置於承載面112上方。本實施例的發光元件120例如是發光二極體。在製程上,可如圖2A所示提供具有電極接點114的載板110。在清潔載板110的承載面112之後,可如圖2B所示,將異方性導電膜130黏貼於載板110的承載面112上,其中異方性導電膜130覆蓋電極接點114。此外,在磊晶基板140上製作完成多個發光元件120,兩相鄰發光元件120的間距例如小於50微米(μm)。然後,再如圖2C所示,藉由覆晶封裝技術,將磊晶基板140連同其上的發光元件120倒置接合至載板110上的電極接點114。之後,形成如圖2D所示的封裝結構100。 The light emitting elements 120 are arranged in an array and disposed above the carrying surface 112. The light-emitting element 120 of the present embodiment is, for example, a light-emitting diode. In the process, a carrier 110 having electrode contacts 114 can be provided as shown in FIG. 2A. After the bearing surface 112 of the carrier 110 is cleaned, the anisotropic conductive film 130 may be adhered to the bearing surface 112 of the carrier 110 as shown in FIG. 2B, wherein the anisotropic conductive film 130 covers the electrode contacts 114. Further, a plurality of light-emitting elements 120 are formed on the epitaxial substrate 140, and the pitch of the adjacent light-emitting elements 120 is, for example, less than 50 micrometers (μm). Then, as shown in FIG. 2C, the epitaxial substrate 140, together with the light-emitting element 120 thereon, is flip-bonded to the electrode contact 114 on the carrier 110 by flip chip packaging. Thereafter, a package structure 100 as shown in FIG. 2D is formed.

在此,若以傳統焊料接合發光元件120與電極接點114,可能因為元件之間的熱膨脹係數差異大,使得封裝結構100受到較大熱應力影響而產生翹曲(warpage),並降低可靠度。因此,本實施例採用異方性導電膜作為接合材料,將發光元件120電性連接至相應的電極接點114。 Here, if the light-emitting element 120 and the electrode contact 114 are bonded by conventional solder, the difference in thermal expansion coefficient between the elements may be large, so that the package structure 100 is affected by a large thermal stress to generate warpage and reduce reliability. . Therefore, in this embodiment, the anisotropic conductive film is used as the bonding material, and the light emitting element 120 is electrically connected to the corresponding electrode contact 114.

具體而言,如圖1所示,各發光元件120包括面向載板 110的一頂部122、相對於頂部122的一底部124以及位於頂部122的一第一電極126。異方性導電膜130配置於承載面112上,且至少覆蓋電極接點114、各發光元件120的頂部122、第一電極126以及各發光元件120的部分側面129。在本實施例中,異方性導電膜130填滿載板110與磊晶基板140之間的空間,即異方性導電膜130完全覆蓋發光元件120的側面129。應說明的是,若無特別指明,本實施例或下述其他實施例的發光元件120可能為垂直式的發光二極體或水平式的發光二極體。換言之,除了位於頂部122的第一電極126之外;若為垂直式的發光二極體,則發光元件120的底部124可能具有一第二電極;又或者,若為水平式的發光二極體,則發光元件120的頂部124可能還具有一第二電極。為了清楚表達特定的特徵,所述第二電極可能在某些實施例的圖式中被省略,但本技術領域中具有通常知識者仍然可以從其他清楚繪出第二電極的實施例推知第二電極可能的位置。 Specifically, as shown in FIG. 1 , each of the light emitting elements 120 includes a carrier facing plate A top portion 122 of the 110, a bottom portion 124 relative to the top portion 122, and a first electrode 126 at the top portion 122. The anisotropic conductive film 130 is disposed on the carrying surface 112 and covers at least the electrode contact 114, the top portion 122 of each of the light emitting elements 120, the first electrode 126, and a portion of the side surface 129 of each of the light emitting elements 120. In the present embodiment, the anisotropic conductive film 130 fills the space between the carrier 110 and the epitaxial substrate 140, that is, the anisotropic conductive film 130 completely covers the side surface 129 of the light emitting element 120. It should be noted that the light-emitting element 120 of this embodiment or other embodiments described below may be a vertical light-emitting diode or a horizontal light-emitting diode unless otherwise specified. In other words, except for the first electrode 126 located at the top portion 122; if it is a vertical light-emitting diode, the bottom portion 124 of the light-emitting element 120 may have a second electrode; or, if it is a horizontal light-emitting diode The top portion 124 of the light emitting element 120 may also have a second electrode. In order to clearly express a particular feature, the second electrode may be omitted in the drawings of some embodiments, but one of ordinary skill in the art can still infer the second from other embodiments that clearly depict the second electrode. Possible position of the electrode.

另外,前述磊晶基板140或下文所述的磊晶基板可能被其他類型的基板取代。例如,發光二極體可在磊晶基板上製作完成之後,被轉移至矽基板或其他基板上,再進行相關製程(如封裝製程),在此先行說明。 In addition, the foregoing epitaxial substrate 140 or the epitaxial substrate described below may be replaced by other types of substrates. For example, after the LED is fabricated on the epitaxial substrate, it is transferred to a germanium substrate or other substrate, and then a related process (such as a packaging process) is performed.

異方性導電膜130包括一絕緣體132以及位於絕緣體132內的多個導電粒子134,且各發光元件120的第一電極126藉由所述多個導電粒子134電性連接至相應的電極接點114。在此,絕緣體132可以是熱固性或熱塑性高分子材料。當載板110與磊晶基 板140之間因熱應力造成翹曲而導致發光元件120與電極接點114之間的間隙(gap)變化時,導電粒子134可對此補償。此外,基於異方性導電膜130之特性,本實施例之封裝結構100的製程溫度較低(<200℃)、且相容於細線化製程。由於不須再額外進行填充底膠(underfill)等步驟,且可實現晶圓級的封裝,藉由一道接合步驟將磊晶基板140上的所有發光元件120接合至載板110,因此製程簡單、快速,適於量產。另外,由於不需使用傳統焊料來進行接合,因此製程材料不含鉛(lead)或鹵(halogen),較為環保。 The anisotropic conductive film 130 includes an insulator 132 and a plurality of conductive particles 134 located in the insulator 132. The first electrode 126 of each of the light-emitting elements 120 is electrically connected to the corresponding electrode contact by the plurality of conductive particles 134. 114. Here, the insulator 132 may be a thermosetting or thermoplastic polymer material. When the carrier 110 and the epitaxial substrate When the gap between the light-emitting element 120 and the electrode contact 114 is changed due to warpage caused by thermal stress between the plates 140, the conductive particles 134 can compensate for this. In addition, based on the characteristics of the anisotropic conductive film 130, the package structure 100 of the present embodiment has a low process temperature (<200 ° C) and is compatible with the thin line process. Since the steps of filling the underfill and the like are not required, and wafer level packaging can be realized, all the light emitting elements 120 on the epitaxial substrate 140 are bonded to the carrier 110 by a bonding step, so that the process is simple, Fast, suitable for mass production. In addition, since the conventional solder is not used for bonding, the process material does not contain lead or halogen, and is environmentally friendly.

圖3繪示依照本揭露之一實施例的一種發光元件的封裝結構300。本實施例的封裝結構300與前述實施例的封裝結構100類似,而主要差異在於本實施例的封裝結構300不具有磊晶基板140。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 3 illustrates a package structure 300 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 300 of the present embodiment is similar to the package structure 100 of the previous embodiment, and the main difference is that the package structure 300 of the present embodiment does not have the epitaxial substrate 140. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,如圖3所示,因應散熱、光學特性、以及薄型化等需求,本實施例在完成如前述實施例所述的封裝製程之後,可進一步藉由雷射、機械研磨或化學方式將磊晶基板140移除。如此,本實施例的發光元件120的底部124共平面,且異方性導電膜130暴露出各發光元件120的底部124,且異方性導電膜130的第一表面130a也與各發光元件120的底部124共平面。 More specifically, as shown in FIG. 3, in order to meet the requirements of heat dissipation, optical characteristics, and thinning, the present embodiment may further perform laser, mechanical grinding, or chemistry after completing the packaging process as described in the foregoing embodiments. The epitaxial substrate 140 is removed in a manner. As such, the bottom portion 124 of the light-emitting element 120 of the present embodiment is coplanar, and the anisotropic conductive film 130 exposes the bottom portion 124 of each of the light-emitting elements 120, and the first surface 130a of the anisotropic conductive film 130 is also associated with each of the light-emitting elements 120. The bottom 124 is coplanar.

圖4繪示依照本揭露之一實施例的一種發光元件的封裝結構400。本實施例採用了與前述實施例相同的元件符號來表示相 同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,以下就本實施例與前述實施例的主要差異點進行說明。 FIG. 4 illustrates a package structure 400 of a light emitting device in accordance with an embodiment of the present disclosure. This embodiment employs the same component symbols as in the previous embodiment to indicate the phase. The same or similar elements, or the elements that have been clearly explained, are omitted. Therefore, the related description of the elements can be referred to the foregoing embodiment, and the main differences between the present embodiment and the foregoing embodiments will be described below.

在本實施例中,發光元件120例如是垂直式的發光二極體。各發光元件120除了位於頂部122的第一電極126之外,更包括位於底部124的一第二電極128,其中第一電極126例如是發光二極體的P極,而第二電極128例如是發光二極體的N極。本實施例可以選擇串接第二電極128,以形成共N極的設計。因此,可在前述實施例移除磊晶基板140之後,在異方性導電膜130的第一表面130a上製作線路層150。在此,線路層150例如是由金屬(如金、銅、鋁、鉻、鈦等)或金屬氧化物(如氧化銦錫或氧化銦鋅等)形成的透明導電層,且線路層150串接各發光元件120的第二電極128。在此,第二電極128也可為全面披覆於第一表面130a的導電層,例如氧化銦錫或氧化銦鋅等透明導電層,或者為導電層經圖案化後形成的線路或電極。 In the present embodiment, the light-emitting element 120 is, for example, a vertical light-emitting diode. Each of the light-emitting elements 120 includes a second electrode 128 at the bottom portion 124 in addition to the first electrode 126 at the top portion 122, wherein the first electrode 126 is, for example, the P-pole of the light-emitting diode, and the second electrode 128 is, for example, The N pole of the light-emitting diode. This embodiment can select a series connection of the second electrodes 128 to form a common N-pole design. Therefore, the wiring layer 150 can be formed on the first surface 130a of the anisotropic conductive film 130 after the epitaxial substrate 140 is removed in the foregoing embodiment. Here, the wiring layer 150 is, for example, a transparent conductive layer formed of a metal (such as gold, copper, aluminum, chromium, titanium, etc.) or a metal oxide (such as indium tin oxide or indium zinc oxide), and the wiring layer 150 is connected in series. The second electrode 128 of each of the light emitting elements 120. Here, the second electrode 128 may also be a conductive layer that is entirely coated on the first surface 130a, such as a transparent conductive layer such as indium tin oxide or indium zinc oxide, or a line or electrode formed by patterning the conductive layer.

圖5繪示依照本揭露之一實施例的一種發光元件的封裝結構500。本實施例的封裝結構500與前述實施例的封裝結構100類似,而主要差異在於本實施例的封裝結構500的發光元件120為水平式的發光二極體。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 5 illustrates a package structure 500 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 500 of the present embodiment is similar to the package structure 100 of the previous embodiment, and the main difference is that the light-emitting element 120 of the package structure 500 of the present embodiment is a horizontal light-emitting diode. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

如圖5所示,本實施例的各發光元件120的頂部122具 有第一電極126以及第二電極128,且第一電極126以及第二電極128分別藉由異方性導電膜130的導電粒子134電性連接至相應的電極接點114。 As shown in FIG. 5, the top portion 122 of each of the light-emitting elements 120 of the present embodiment has The first electrode 126 and the second electrode 128 are electrically connected to the corresponding electrode contact 114 by the conductive particles 134 of the anisotropic conductive film 130, respectively.

在前述多個實施例中,發光元件120例如是在同一磊晶基板140上製作的多個發光二極體,因此可發出相同色光。然而,本揭露不限於此。在其他實施例中,發光元件120也可能包括發出不同色光的第一色(如紅光)發光二極體、第二色(如綠光)發光二極體,乃至第三色(如藍光)發光二極體,甚或第四色或更多顏色的發光二極體。以下提出幾種封裝製程為例進行說明。 In the foregoing various embodiments, the light-emitting elements 120 are, for example, a plurality of light-emitting diodes fabricated on the same epitaxial substrate 140, and thus emit the same color light. However, the disclosure is not limited thereto. In other embodiments, the light-emitting element 120 may also include a first color (eg, red light) light emitting diode that emits different color lights, a second color (such as a green light) light emitting diode, or even a third color (such as blue light). A light-emitting diode, or even a fourth or more color light-emitting diode. The following describes several packaging processes as an example.

圖6A~6H繪示依照本揭露之一實施例的一種發光元件的封裝製程。首先,如圖6A所示,在一載具660的一表面662上形成多個凹槽664,並且,如圖6B所示,在載具660的表面662上全面形成一離型層(de-bonding layer)670。接著,如圖6C所示,將能發出不同色光的發光元件(例如是發光二極體)622、624、626等分別放置於凹槽664內,且發光元件622、624、626藉由離型層670固定於載具660上。形成所述凹槽664的作用在於幫助發光元件622、624、626定位,以提升後續接合製程的對位精度。 6A-6H illustrate a packaging process of a light emitting device according to an embodiment of the present disclosure. First, as shown in FIG. 6A, a plurality of grooves 664 are formed on a surface 662 of a carrier 660, and as shown in FIG. 6B, a release layer is formed on the surface 662 of the carrier 660 (de- Bonding layer) 670. Next, as shown in FIG. 6C, light-emitting elements (for example, light-emitting diodes) 622, 624, and 626 capable of emitting different color lights are respectively placed in the grooves 664, and the light-emitting elements 622, 624, and 626 are separated by light. Layer 670 is secured to carrier 660. The function of forming the groove 664 is to assist in positioning the light-emitting elements 622, 624, 626 to improve the alignment accuracy of the subsequent bonding process.

另一方面,如圖6D所示,提供具有多個電極接點614的載板610。在此,載板610例如是半導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片(Drive IC)。接著,如圖6E所示,在載板610上形成覆蓋電極接點614的異方性導電膜630。異方性導電膜630的特 性如前述實施例的異方性導電膜130,於此不再贅述。然後,如圖6F所示,藉由覆晶封裝技術,將載板610連同其上的電極接點614倒置接合至載具660上,使電極接點614透過異方性導電膜630與相應的發光元件622、624、626相互電性連接,而形成如圖6G所示的結構。之後,如圖6H所示,移除離型層670與載具660,以暴露出發光元件622、624、626,得到封裝結構600。 On the other hand, as shown in FIG. 6D, a carrier 610 having a plurality of electrode contacts 614 is provided. Here, the carrier 610 is, for example, a semiconductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving IC including an electronic circuit. Next, as shown in FIG. 6E, an anisotropic conductive film 630 covering the electrode contact 614 is formed on the carrier 610. Special feature of the anisotropic conductive film 630 The anisotropic conductive film 130 of the foregoing embodiment is not described herein. Then, as shown in FIG. 6F, the carrier 610 is flip-bonded to the carrier 660 along with the electrode contacts 614 thereon by the flip chip packaging technique, so that the electrode contacts 614 pass through the anisotropic conductive film 630 and the corresponding The light-emitting elements 622, 624, and 626 are electrically connected to each other to form a structure as shown in FIG. 6G. Thereafter, as shown in FIG. 6H, the release layer 670 and the carrier 660 are removed to expose the light-emitting elements 622, 624, 626 to obtain the package structure 600.

藉此,本實施例的封裝製程可以在載板610上整合能發出不同色光的多個發光元件622、624、626。由於採用異方性導電膜630作為接合材料,因此不須再額外進行填充底膠等步驟,且可實現晶圓級的封裝,藉由一道接合步驟將所有發光元件622、624、626接合至載板610,因此製程簡單、快速,適於量產。另外,由於不需使用傳統焊料來進行接合,因此製程材料不含鉛(lead)或鹵(halogen),較為環保。 Thereby, the packaging process of the embodiment can integrate a plurality of light-emitting elements 622, 624, 626 capable of emitting different colors of light on the carrier 610. Since the anisotropic conductive film 630 is used as the bonding material, it is not necessary to additionally perform steps such as filling the primer, and wafer level packaging can be realized, and all the light-emitting elements 622, 624, and 626 are bonded to each other by a bonding step. The plate 610 is therefore simple and fast, and is suitable for mass production. In addition, since the conventional solder is not used for bonding, the process material does not contain lead or halogen, and is environmentally friendly.

前述實施例的發光元件622、624、626例如是於磊晶基板上製作的發光二極體。實作上,所述發光元件622、624、626可以是晶圓製程結束並進行單體化(singulation)之後的晶片型態的發光二極體。然而,本揭露不限於此。舉例而言,封裝結構600的發光元件622、624、626通常排列為面陣列,以提供全彩畫面的顯示。考量製程的簡便與效率以及接合製程的對位精度,可以在進行晶圓的單體化步驟時,將晶圓切割為條狀的發光單元。如圖7所示,第一色條狀發光單元710例如是由晶圓702切割形成,其包括依序連接的多個第一色發光二極體712。同理,由其他晶圓 (未繪示)切割形成的第二色條狀發光單元720與第三色條狀發光單元730分別包括依序連接的多個第二色發光二極體722與多個第三色發光二極體732。請同時參考圖6與7,將此第一色條狀發光單元710、第二色條狀發光單元720與第三色條狀發光單元730應用於前述實施例的封裝製程時,只需順應改變載具660上的凹槽664形狀為條狀,以容納第一色條狀發光單元710、第二色條狀發光單元720與第三色條狀發光單元730,便可沿用相同的步驟來進行封裝製程。 The light-emitting elements 622, 624, and 626 of the foregoing embodiments are, for example, light-emitting diodes fabricated on an epitaxial substrate. In practice, the light-emitting elements 622, 624, and 626 may be wafer-type light-emitting diodes after the wafer process is completed and singulation is performed. However, the disclosure is not limited thereto. For example, the light-emitting elements 622, 624, 626 of the package structure 600 are typically arranged in an array of faces to provide display of a full color picture. Considering the simplicity and efficiency of the process and the alignment accuracy of the bonding process, the wafer can be cut into strip-shaped light-emitting units during the singulation step of the wafer. As shown in FIG. 7, the first color strip light emitting unit 710 is formed by, for example, cutting a wafer 702, and includes a plurality of first color light emitting diodes 712 connected in sequence. Similarly, by other wafers The second color strip light emitting unit 720 and the third color strip light emitting unit 730 formed by cutting (not shown) respectively include a plurality of second color light emitting diodes 722 and a plurality of third color light emitting diodes sequentially connected. Body 732. Referring to FIG. 6 and FIG. 7 simultaneously, when the first color strip light emitting unit 710, the second color strip light emitting unit 720, and the third color strip light emitting unit 730 are applied to the packaging process of the foregoing embodiment, only the change is required. The groove 664 on the carrier 660 is strip-shaped to accommodate the first color strip-shaped light-emitting unit 710, the second color strip-shaped light-emitting unit 720, and the third color strip-shaped light-emitting unit 730, and the same steps can be followed. Packaging process.

圖8繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構800。在本實施例中,可先藉由覆晶接合技術形成具有發光元件陣列的封裝單元後,再以疊層(lamination)的方式結合多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。本實施例提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,由本實施例延伸的其他實施例還可針對導光及混光等光學品質議題提出解決方案。 FIG. 8 illustrates a package structure 800 of a light-emitting element that can achieve full color display in accordance with an embodiment of the present disclosure. In this embodiment, a package unit having an array of light-emitting elements may be formed by a flip chip bonding technique, and then a plurality of package units may be bonded in a lamination manner. For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. The package structure of the light-emitting element proposed in this embodiment is simple, fast, and suitable for mass production. At the same time, other embodiments extended by this embodiment can also propose solutions for optical quality issues such as light guiding and light mixing.

如圖8所示,本實施例的封裝結構800包括一第一封裝單元801以及堆疊於第一封裝單元801上的兩個第二封裝單元802與803。第一封裝單元801包括一第一載板810-1、多個第一發光元件820-1、多個第一導電件830-1以及一第一包封體840-1。第一載板810-1具有一第一承載面812-1以及配置於第一承載面812-1上的多個第一電極接點816-1。在此,載板810-1例如是半 導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片。此外,所述多個第一發光元件820-1呈陣列排列而配置於第一承載面812-1上方。在製程上,例如可以採用前述多個實施例的方法來形成第一封裝單元801。更具體而言,可採用例如圖2A~2D所示的製程,藉由異方性導電膜與覆晶封裝技術來接合第一發光元件820-1與載板810-1。並且,在接合步驟後,移除可能存在的磊晶基板(未繪示),以形成可供後續第二封裝單元802與803堆疊的基礎面。 As shown in FIG. 8 , the package structure 800 of the present embodiment includes a first package unit 801 and two second package units 802 and 803 stacked on the first package unit 801 . The first package unit 801 includes a first carrier 810-1, a plurality of first light-emitting elements 820-1, a plurality of first conductive members 830-1, and a first envelope 840-1. The first carrier 810-1 has a first bearing surface 812-1 and a plurality of first electrode contacts 816-1 disposed on the first bearing surface 812-1. Here, the carrier board 810-1 is, for example, a half A conductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving wafer including an electronic circuit. In addition, the plurality of first light-emitting elements 820-1 are arranged in an array and disposed above the first bearing surface 812-1. In the process, the first package unit 801 can be formed, for example, by the method of the foregoing various embodiments. More specifically, the first light-emitting element 820-1 and the carrier plate 810-1 can be bonded by an anisotropic conductive film and a flip chip packaging technique using, for example, the processes shown in FIGS. 2A to 2D. Also, after the bonding step, the epitaxial substrate (not shown) that may be present is removed to form a base surface that can be stacked by the subsequent second package units 802 and 803.

本技術領域中具有通常知識者在參照前述多個實施例的說明之後應能理解並實現第一封裝單元801可能的製作流程,因此不再就相同的製程步驟重複贅述。 Those skilled in the art should be able to understand and implement the possible manufacturing process of the first packaging unit 801 after referring to the description of the foregoing various embodiments, and thus the description of the same process steps will not be repeated.

結構上,如圖8所示,第一封裝單元801的多個第一發光元件820-1例如是在同一磊晶基板上製作的多個第一色發光二極體,例如,向圖面上方發出藍光B的發光二極體。各第一發光元件820-1包括面向第一載板810-1的一第一頂部822-1、相對於第一頂部822-1的一第一底部824-1以及位於第一頂部822-1的一第一電極826-1。第一導電件830-1分別電性連接相應的第一電極826-1與第一電極接點816-1。第一包封體840-1配置於第一承載面812-1上,且至少覆蓋第一電極接點816-1、各第一發光元件820-1的第一頂部822-1、第一電極826-1以及各第一發光元件820-1的側面829-1。此外,第一包封體840-1的一第一表面842-1與各第一發光元件820-1的第一底部824-1共平面。 Structurally, as shown in FIG. 8 , the plurality of first light-emitting elements 820-1 of the first package unit 801 are, for example, a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate, for example, above the drawing surface. A light-emitting diode that emits blue light B. Each of the first light-emitting elements 820-1 includes a first top portion 822-1 facing the first carrier 810-1, a first bottom 824-1 opposite the first top 822-1, and a first top 822-1. A first electrode 826-1. The first conductive members 830-1 are electrically connected to the corresponding first electrodes 826-1 and the first electrode contacts 816-1, respectively. The first encapsulation body 840-1 is disposed on the first bearing surface 812-1 and covers at least the first electrode contact 816-1, the first top portion 822-1 of each first light emitting element 820-1, and the first electrode. 826-1 and the side surface 829.1 of each of the first light-emitting elements 820-1. In addition, a first surface 842-1 of the first encapsulation 840-1 is coplanar with the first bottom portion 824-1 of each of the first illuminating elements 820-1.

承上述,第一包封體840-1以及第一導電件830-1例如分別為第一異方性導電膜的一第一絕緣體840-1以及位於第一絕緣體840-1內的多個第一導電粒子830-1。第一絕緣體840-1可以是熱固性或熱塑性高分子材料。採用第一異方性導電膜作為接合材料的效果可參考前述實施例的說明,此處不再贅述。 In the above, the first encapsulant 840-1 and the first conductive member 830-1 are, for example, a first insulator 840-1 of the first anisotropic conductive film and a plurality of the first insulator 840-1, respectively. A conductive particle 830-1. The first insulator 840-1 may be a thermosetting or thermoplastic polymer material. The effect of using the first anisotropic conductive film as a bonding material can be referred to the description of the foregoing embodiment, and details are not described herein again.

類似地,第二封裝單元802與803可採用與第一封裝單元801相同的製程來製作。此外,考量到第二封裝單元802與803堆疊於第一封裝單元801上方,其載板可能會影響整體的出光強度,因此可以進一步薄化第二封裝單元802與803的載板或採用透光材料來製作載板。 Similarly, the second package units 802 and 803 can be fabricated using the same process as the first package unit 801. In addition, it is considered that the second package units 802 and 803 are stacked above the first package unit 801, and the carrier plate may affect the overall light output intensity, so that the carrier plates of the second package units 802 and 803 may be further thinned or light-transmitted. Material to make the carrier board.

具體而言,如圖8所示,第二封裝單元802堆疊於第一封裝單元801上,且第二封裝單元802包括一第二載板810-2、多個第二發光元件820-2、多個第二導電件830-2以及一第二包封體840-2。第二載板810-2具有一第二承載面812-2、相對於第二承載面812-2的一背面814-2以及配置於第二承載面812-2上的多個第二電極接點816-2。第二載板810-2藉由背面814-2接合至下方第一包封體840-1的第一表面842-1與各第一發光元件820-1的第一底部824-1。此外,為提高下方之第一封裝單元801的出光,第二載板810-2的厚度可小於第一載板810-1的厚度,或者第二載板810-2可為透光基板。當然,在其他實施例中,第一載板810-1也可能被薄化,以降低整體封裝結構800的厚度。 Specifically, as shown in FIG. 8, the second package unit 802 is stacked on the first package unit 801, and the second package unit 802 includes a second carrier 810-2, a plurality of second light-emitting elements 820-2, A plurality of second conductive members 830-2 and a second envelope 840-2. The second carrier 810-2 has a second bearing surface 812-2, a back surface 814-2 opposite to the second bearing surface 812-2, and a plurality of second electrodes disposed on the second bearing surface 812-2. Point 816-2. The second carrier 810-2 is bonded to the first surface 842-1 of the lower first encapsulation 840-1 and the first bottom portion 824-1 of each of the first illuminating elements 820-1 by the back surface 814-2. In addition, in order to increase the light output of the first package unit 801 below, the thickness of the second carrier 810-2 may be smaller than the thickness of the first carrier 810-1, or the second carrier 810-2 may be a transparent substrate. Of course, in other embodiments, the first carrier 810-1 may also be thinned to reduce the thickness of the overall package structure 800.

在本實施例中,第二封裝單元802的多個第二發光元件 820-2例如是在同一磊晶基板上製作的多個第二色發光二極體,例如,向圖面上方發出綠光G的發光二極體。第二發光元件820-2呈陣列排列而配置於第二承載面812-2上方。各第二發光元件820-2包括面向第二載板810-2的一第二頂部822-2、相對於第二頂部822-2的一第二底部824-2以及位於第二頂部822-2的一第三電極826-2。第二導電件830-2分別電性連接相應的第三電極826-2與第二電極接點816-2。第二包封體840-2配置於第二承載面812-2上,且至少覆蓋第二電極接點816-2、各第二發光元件820-2的第二頂部822-2、第三電極826-2以及各第二發光元件820-2的側面829-2。此外,第二包封體840-2的一第一表面842-2與各第二發光元件820-2的第二底部824-2共平面。 In this embodiment, the plurality of second light emitting elements of the second package unit 802 820-2 is, for example, a plurality of second color light-emitting diodes formed on the same epitaxial substrate, for example, a light-emitting diode that emits green light G toward the upper side of the drawing. The second light-emitting elements 820-2 are arranged in an array and disposed above the second bearing surface 812-2. Each of the second light-emitting elements 820-2 includes a second top 822-2 facing the second carrier 810-2, a second bottom 824-2 opposite the second top 822-2, and a second top 822-2. A third electrode 826-2. The second conductive members 830-2 are electrically connected to the corresponding third electrodes 826-2 and the second electrode contacts 816-2, respectively. The second encapsulation body 840-2 is disposed on the second bearing surface 812-2, and covers at least the second electrode contact 816-2, the second top portion 822-2 of each second light emitting element 820-2, and the third electrode. 826-2 and side 829-2 of each of the second light-emitting elements 820-2. In addition, a first surface 842-2 of the second encapsulant 840-2 is coplanar with the second bottom 824-2 of each of the second illuminating elements 820-2.

在本實施例中,第二包封體840-2以及第二導電件830-2例如分別為一第二異方性導電膜的一第二絕緣體840-2以及位於第二絕緣體840-2內的多個第二導電粒子830-2。第二絕緣體840-2可以是熱固性或熱塑性高分子材料。採用第二異方性導電膜作為接合材料的效果可參考前述實施例的說明,此處不再贅述。 In this embodiment, the second encapsulant 840-2 and the second conductive member 830-2 are respectively a second insulator 840-2 of a second anisotropic conductive film and are located in the second insulator 840-2. A plurality of second conductive particles 830-2. The second insulator 840-2 may be a thermosetting or thermoplastic polymer material. The effect of using the second anisotropic conductive film as a bonding material can be referred to the description of the foregoing embodiment, and details are not described herein again.

另外,第二封裝單元803堆疊於第二封裝單元802上,且第二封裝單元803包括一第二載板810-3、多個第二發光元件820-3、多個第二導電件830-3以及一第二包封體840-3。第二載板810-3具有一第二承載面812-3、相對於第二承載面812-3的一背面814-3以及配置於第二承載面812-3上的多個第二電極接點816-3。第二載板810-3藉由背面814-3接合至下方第二包封體 840-2的第一表面842-2與各第二發光元件820-2的第二底部824-2。此外,為提高下方之第一封裝單元801以及第二封裝單元802的出光,第二載板810-3的厚度可小於第一載板810-1的厚度,或者第二載板810-3可為透光基板。當然,在其他實施例中,第一載板810-1也可能被薄化,以降低整體封裝結構800的厚度。 In addition, the second package unit 803 is stacked on the second package unit 802, and the second package unit 803 includes a second carrier 810-3, a plurality of second illuminating elements 820-3, and a plurality of second conductive members 830- 3 and a second enveloping body 840-3. The second carrier 810-3 has a second bearing surface 812-3, a back surface 814-3 opposite to the second bearing surface 812-3, and a plurality of second electrodes disposed on the second bearing surface 812-3. Point 816-3. The second carrier 810-3 is bonded to the lower second encapsulant by the back surface 814-3 The first surface 842-2 of the 840-2 and the second bottom 824-2 of each of the second light emitting elements 820-2. In addition, in order to increase the light output of the first package unit 801 and the second package unit 802, the thickness of the second carrier 810-3 may be smaller than the thickness of the first carrier 810-1, or the second carrier 810-3 may It is a transparent substrate. Of course, in other embodiments, the first carrier 810-1 may also be thinned to reduce the thickness of the overall package structure 800.

在本實施例中,第二封裝單元803的多個第二發光元件820-3例如是在同一磊晶基板上製作的多個第三色發光二極體,例如,向圖面上方發出紅光R的發光二極體。第二發光元件820-3呈陣列排列而配置於第二承載面812-3上方。各第二發光元件820-3包括面向第二載板810-3的一第二頂部822-3、相對於第二頂部822-3的一第二底部824-3以及位於第二頂部822-3的一第三電極826-3。第二導電件830-3分別電性連接相應的第三電極826-3與第二電極接點816-3。第二包封體840-3配置於第二承載面812-3上,且至少覆蓋第二電極接點816-3、各第二發光元件820-3的第二頂部822-3、第三電極826-3以及各第二發光元件820-3的側面829-3。此外,第二包封體840-3的一第一表面842-3與各第二發光元件820-3的第二底部824-3共平面。 In this embodiment, the plurality of second light-emitting elements 820-3 of the second package unit 803 are, for example, a plurality of third color light-emitting diodes fabricated on the same epitaxial substrate, for example, emitting red light above the surface. Light-emitting diode of R. The second light-emitting elements 820-3 are arranged in an array and disposed above the second carrying surface 812-3. Each of the second light-emitting elements 820-3 includes a second top 822-3 facing the second carrier 810-3, a second bottom 824-3 opposite the second top 822-3, and a second top 822-3. A third electrode 826-3. The second conductive members 830-3 are electrically connected to the corresponding third electrodes 826-3 and the second electrode contacts 816-3, respectively. The second encapsulation body 840-3 is disposed on the second bearing surface 812-3 and covers at least the second electrode contact 816-3, the second top portion 822-3 of each second light emitting element 820-3, and the third electrode. 826-3 and side 829-3 of each of the second light-emitting elements 820-3. In addition, a first surface 842-3 of the second encapsulation 840-3 is coplanar with the second bottom portion 824-3 of each of the second illuminating elements 820-3.

在本實施例中,第二包封體840-3以及第二導電件830-3例如分別為一第二異方性導電膜的一第二絕緣體840-3以及位於第二絕緣體840-3內的多個第二導電粒子830-3。第二絕緣體840-3可以是熱固性或熱塑性高分子材料。採用第二異方性導電膜作為接合材料的效果可參考前述實施例的說明,此處不再贅述。 In this embodiment, the second encapsulant 840-3 and the second conductive member 830-3 are respectively a second insulator 840-3 of a second anisotropic conductive film and located in the second insulator 840-3. A plurality of second conductive particles 830-3. The second insulator 840-3 may be a thermosetting or thermoplastic polymer material. The effect of using the second anisotropic conductive film as a bonding material can be referred to the description of the foregoing embodiment, and details are not described herein again.

另外,如圖8所示,在本實施例中,第一封裝單元801可包括一第一線路層862-1,其配置於第一載板810-1的第一承載面812-1上,且第一包封體840-1暴露出第一載板810-1的外圍以及部分的第一線路層862-1。第一線路層862-1電性連接第一電極接點816-1,以作為外界傳送電訊號至第一電極接點816-1的橋樑。第二封裝單元802可包括一第三線路層862-2,其配置於第二載板810-2的第一承載面812-2上,且第二包封體840-2暴露出第二載板810-2的外圍以及部分的第三線路層862-2。第三線路層862-2電性連接第二電極接點816-2,以作為外界傳送電訊號至第二電極接點816-2的橋樑。此外,第二封裝單元803可包括一第三線路層862-3,其配置於第二載板810-3的第一承載面812-3上,且第二包封體840-3暴露出第二載板810-3的外圍以及部分的第三線路層862-3。第三線路層862-3電性連接第二電極接點814-3,以作為外界傳送電訊號至第二電極接點816-3的橋樑。 In addition, as shown in FIG. 8 , in the embodiment, the first package unit 801 may include a first circuit layer 862-1 disposed on the first bearing surface 812-1 of the first carrier 810-1. And the first encapsulation 840-1 exposes the periphery of the first carrier 810-1 and a portion of the first wiring layer 862-1. The first circuit layer 862-1 is electrically connected to the first electrode contact 816-1 as a bridge for externally transmitting electrical signals to the first electrode contact 816-1. The second encapsulation unit 802 can include a third circuit layer 862-2 disposed on the first carrier surface 812-2 of the second carrier 810-2, and the second encapsulation 840-2 exposing the second carrier The periphery of the board 810-2 and a portion of the third line layer 862-2. The third circuit layer 862-2 is electrically connected to the second electrode contact 816-2 as a bridge for externally transmitting the electrical signal to the second electrode contact 816-2. In addition, the second encapsulating unit 803 can include a third circuit layer 862-3 disposed on the first bearing surface 812-3 of the second carrier 810-3, and the second encapsulation 840-3 is exposed. The periphery of the second carrier 810-3 and a portion of the third wiring layer 862-3. The third circuit layer 862-3 is electrically connected to the second electrode contact 814-3 as a bridge for externally transmitting the electrical signal to the second electrode contact 816-3.

圖9A~9C分別繪示第一封裝單元801的第一發光元件820-1、第二封裝單元802的第二發光元件820-2以及第二封裝單元803的第二發光元件820-3在第一載板810-1的第一承載面812-1(請參考圖8)的垂直投影。由圖9A~9C可知所述第一發光元件820-1、第二發光元件820-2以及第二發光元件820-3在第一承載面812-1(請參考圖8)上的垂直投影相互交錯,且不相互重疊,以構成一面陣列。藉此,可以使下層發光元件在垂直方向的出光不會被他層的遮光元件(如接點或線路)所遮擋,而斜向的出光則可 被他層的遮光元件遮擋,以減少混色的發生。 9A to 9C illustrate a first light emitting element 820-1 of the first package unit 801, a second light emitting element 820-2 of the second package unit 802, and a second light emitting element 820-3 of the second package unit 803, respectively. A vertical projection of the first bearing surface 812-1 of the carrier plate 810-1 (please refer to FIG. 8). 9A to 9C, the vertical projections of the first light-emitting element 820-1, the second light-emitting element 820-2, and the second light-emitting element 820-3 on the first bearing surface 812-1 (please refer to FIG. 8) are mutually Interlaced and do not overlap each other to form an array. Thereby, the light emitted by the lower layer of the light-emitting element in the vertical direction can be blocked by the light-shielding elements (such as contacts or lines) of the other layer, and the oblique light can be emitted. Blocked by the shading elements of his layer to reduce the occurrence of color mixing.

圖10繪示依照本揭露之一實施例的一種發光元件的封裝結構1000。本實施例的封裝結構1000與前述實施例的封裝結構800類似,而主要差異在於本實施例在封裝完成後更在第一發光元件820-1以及第二發光元件820-2上方形成作為導光結構的多個通孔1010,以維持高出光率。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 10 illustrates a package structure 1000 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 1000 of the present embodiment is similar to the package structure 800 of the foregoing embodiment, and the main difference is that the present embodiment is formed as a light guide over the first light-emitting element 820-1 and the second light-emitting element 820-2 after the package is completed. A plurality of through holes 1010 of the structure are used to maintain a high light output rate. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,本實施例藉由例如雷射、機械鑽孔、或化學蝕刻移除第一發光元件820-1以及第二發光元件820-2上方可能存在的第二封裝單元802及/或第二封裝單元803,以形成通孔1010。各通孔1010的一端連接相應的第一發光元件820-1的第一底部824-1或第二發光元件820-2的第二底部824-2,並且暴露出第一發光元件820-1的第一底部824-1或第二發光元件820-2的第二底部824-2,使得第一發光元件820-1發出的藍光B以及第二發光元件820-2發出的綠光G能經由通孔1010出射到外界。 More specifically, the present embodiment removes the second package unit 802 and/or the second package unit 802 that may exist above the second light-emitting element 820-2 by, for example, laser, mechanical drilling, or chemical etching. The second package unit 803 is formed to form the through hole 1010. One end of each of the through holes 1010 is connected to the first bottom portion 824-1 of the corresponding first light emitting element 820-1 or the second bottom portion 824-2 of the second light emitting element 820-2, and the first light emitting element 820-1 is exposed. The first bottom portion 824-1 or the second bottom portion 824-2 of the second light emitting element 820-2 enables the blue light B emitted by the first light emitting element 820-1 and the green light G emitted by the second light emitting element 820-2 to pass through The hole 1010 is emitted to the outside.

在本實施例中,由於形成貫穿第二封裝單元802及/或第二封裝單元803的通孔1010,因此第二包封體840-2、840-3以及第二載板810-2、810-3的材質選擇彈性較大,可以採用透光或不透光的材質。 In this embodiment, since the through holes 1010 penetrating the second package unit 802 and/or the second package unit 803 are formed, the second envelopes 840-2 and 840-3 and the second carrier plates 810-2 and 810 are formed. The material of -3 is flexible and can be made of light or opaque material.

圖11繪示依照本揭露之一實施例的一種發光元件的封裝結構1100。本實施例採用了與前述實施例相同的元件符號來表示 相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1100與前述實施例的封裝結構1000類似,而主要差異在於本實施例更在通孔1010內填入高折射率的透光材料1020,以藉由此高折射率的透光材料1020與通孔1010外的第二包封體840-2、840-3產生的全反射實現光波導之效應,傳遞第一發光元件820-1發出的藍光B以及第二發光元件820-2發出的綠光G。在此,透光材料1020的折射率大於第二包封體840-2、840-3的折射率。 FIG. 11 illustrates a package structure 1100 of a light emitting device in accordance with an embodiment of the present disclosure. This embodiment adopts the same component symbols as those of the foregoing embodiment to represent The same or similar components are omitted, or the components that have been clearly described are omitted. Therefore, the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1100 of the present embodiment is similar to the package structure 1000 of the previous embodiment, and the main difference is that the present embodiment further fills the through-hole 1010 with a high-refractive-index light-transmitting material 1020 to thereby pass through the high refractive index. The total reflection generated by the optical material 1020 and the second encapsulants 840-2, 840-3 outside the through hole 1010 realizes the effect of the optical waveguide, and transmits the blue light B emitted by the first light emitting element 820-1 and the second light emitting element 820- 2 emitted green light G. Here, the refractive index of the light transmissive material 1020 is greater than the refractive index of the second encapsulants 840-2, 840-3.

圖12繪示依照本揭露之一實施例的一種發光元件的封裝結構1200。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1200與前述實施例的封裝結構1000類似,而主要差異在於本實施例更在通孔1010內壁覆蓋例如金屬等反射材料1030,以藉由反射材料1030反射在通孔1010內傳遞的第一發光元件820-1發出的藍光B以及第二發光元件820-2發出的綠光G。 FIG. 12 illustrates a package structure 1200 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1200 of the present embodiment is similar to the package structure 1000 of the previous embodiment, and the main difference is that the inner wall of the through hole 1010 covers the reflective material 1030 such as metal to reflect on the through hole 1010 by the reflective material 1030. The blue light B emitted from the first light-emitting element 820-1 and the green light G emitted from the second light-emitting element 820-2.

圖13繪示依照本揭露之一實施例的一種發光元件的封裝結構1300。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1300與前述實施例的封裝結構800類似,而主要差異在於 本實施例的封裝結構1300更包括一黏著層1310,配置於相鄰的第一封裝單元801與第二封裝單元802之間,以及一黏著層1320,配至於相鄰的第二封裝單元802與803之間。在此,黏著層1310以及1320例如為非導電膠(Non-Conductive Film)或紫外線接著膠(UV膠)。藉由黏著層1310以及1320來進行第一封裝單元801與第二封裝單元802、803之間的接合,可以使材料的選用範圍更廣泛,製程參數可調變性更廣。 FIG. 13 illustrates a package structure 1300 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1300 of this embodiment is similar to the package structure 800 of the previous embodiment, and the main difference is that The package structure 1300 of the present embodiment further includes an adhesive layer 1310 disposed between the adjacent first package unit 801 and the second package unit 802, and an adhesive layer 1320 disposed adjacent to the adjacent second package unit 802. Between 803. Here, the adhesive layers 1310 and 1320 are, for example, a non-conductive film or a UV adhesive. The bonding between the first package unit 801 and the second package units 802, 803 by the adhesive layers 1310 and 1320 can make the material selection range wider and the process parameters can be more widely modified.

圖14繪示依照本揭露之一實施例的一種發光元件的封裝結構1400。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1400與前述實施例的封裝結構1300類似,而主要差異在於本實施例的封裝結構1400不採用異方性導電膜來接合封裝單元內的發光元件與電極接點,而改為以焊料來做為接合材料。 FIG. 14 illustrates a package structure 1400 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1400 of the present embodiment is similar to the package structure 1300 of the foregoing embodiment, and the main difference is that the package structure 1400 of the embodiment does not use an anisotropic conductive film to bond the light-emitting elements and the electrode contacts in the package unit. In order to use solder as a bonding material.

更具體而言,如圖14所示,本實施例的第一導電件830-1、第二導電件830-2以及第二導電件830-3分別為由焊料形成的多個導電凸塊。此外,第一包封體840-1、第二包封體840-2以及第二包封體840-3可選用非導電膠(Non-Conductive Film)、底膠(underfill)或紫外線接著膠(UV膠)等。 More specifically, as shown in FIG. 14, the first conductive member 830-1, the second conductive member 830-2, and the second conductive member 830-3 of the present embodiment are respectively a plurality of conductive bumps formed of solder. In addition, the first encapsulant 840-1, the second encapsulant 840-2, and the second encapsulant 840-3 may be selected from a non-conductive film, an underfill or an ultraviolet adhesive. UV glue) and so on.

圖15為依照本揭露之一實施例的一種發光元件的封裝結構1500的局部示意圖。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件, 因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1500與前述實施例的封裝結構800類似,而主要差異在於本實施例的封裝結構1500更包括多條導線1510,分別電性連接於第一線路層862-1與第三線路層862-2或862-3之間,或電性連接於相應的兩第三線路層862-2與862-3之間。換言之,即使第二載板810-2以及810-3被薄化,由於其下方有第一包封體840-1以及第二包封體840-2支撐,因此仍可維持充分的結構強度以進行打線接合(wire bonding)製程,以藉由導線1510將各層訊號整合至底層的第一載板810-1進行驅動與調控。 FIG. 15 is a partial schematic view of a package structure 1500 of a light emitting device according to an embodiment of the present disclosure. The present embodiment uses the same reference numerals as the above-described embodiments to denote the same or similar elements, or the elements that have been clearly explained are omitted. Therefore, the related description of the components can be referred to the foregoing embodiment, and details are not described herein again. The package structure 1500 of the present embodiment is similar to the package structure 800 of the foregoing embodiment, and the main difference is that the package structure 1500 of the embodiment further includes a plurality of wires 1510 electrically connected to the first circuit layer 862-1 and the third layer, respectively. Between the circuit layers 862-2 or 862-3, or electrically connected between the corresponding two third circuit layers 862-2 and 862-3. In other words, even if the second carrier plates 810-2 and 810-3 are thinned, since the first envelope body 840-1 and the second envelope body 840-2 are supported underneath, sufficient structural strength can be maintained. A wire bonding process is performed to integrate and drive the layer signals to the first carrier board 810-1 of the bottom layer for driving and regulation.

圖16繪示依照本揭露之一實施例的一種發光元件的封裝結構1600。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1600與前述實施例的封裝結構1500類似,而主要差異在於本實施例的封裝結構1600以導通孔1610來取代前述實施例的導線1510,用以使各層訊號相通聯,以進行整合與調控。更具體而言,封裝結構1600包括貫穿第二載板810-2或第二載板810-3的多個導通孔1610,用以電性連接於第三線路層862-2與其下方的第一發光元件820-1之間,或電性連接於相應的第三線路層862-3與其下方的第二發光元件820-2之間。 FIG. 16 illustrates a package structure 1600 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1600 of the present embodiment is similar to the package structure 1500 of the previous embodiment, and the main difference is that the package structure 1600 of the present embodiment replaces the wire 1510 of the foregoing embodiment with a via hole 1610 for interconnecting the signals of the layers. Integrate and regulate. More specifically, the package structure 1600 includes a plurality of vias 1610 extending through the second carrier 810-2 or the second carrier 810-3 for electrically connecting to the third circuit layer 862-2 and the first portion thereof Between the light-emitting elements 820-1, or electrically connected between the corresponding third circuit layer 862-3 and the second light-emitting element 820-2 below it.

圖17繪示依照本揭露之一實施例的一種發光元件的封裝結構1700。本實施例採用了與前述實施例相同的元件符號來表示 相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構1700與前述實施例的封裝結構800類似,而主要差異在於本實施例的封裝結構1700更包括一黑矩陣層1710,配置於第二封裝單元803之上,且黑矩陣層1710具有多個透光區1712,分別對應於第一發光元件820-1以及第二發光元件820-2、820-3,以定義出全彩顯示面上的多個畫素區域。在此,黑矩陣層1710例如是表面形成有黑色遮光區域的透明蓋板。 FIG. 17 illustrates a package structure 1700 of a light emitting device in accordance with an embodiment of the present disclosure. This embodiment adopts the same component symbols as those of the foregoing embodiment to represent The same or similar components are omitted, or the components that have been clearly described are omitted. Therefore, the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 1700 of the present embodiment is similar to the package structure 800 of the previous embodiment, and the main difference is that the package structure 1700 of the present embodiment further includes a black matrix layer 1710 disposed on the second package unit 803 and having a black matrix layer. The 1710 has a plurality of light transmissive regions 1712 corresponding to the first light emitting element 820-1 and the second light emitting elements 820-2, 820-3, respectively, to define a plurality of pixel regions on the full color display surface. Here, the black matrix layer 1710 is, for example, a transparent cover plate having a black light-shielding region formed on its surface.

圖18繪示依照本揭露之一實施例的一種發光元件的封裝結構1800。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,以下就本實施例與前述實施例的主要差異點進行說明。 FIG. 18 illustrates a package structure 1800 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar elements in the embodiment, or the elements that have been clearly described are omitted. Therefore, the related description of the elements can be referred to the foregoing embodiment, and the present embodiment and the foregoing The main differences of the embodiments are explained.

在本實施例中,第一發光元件820-1、第二發光元件820-2以及第二發光元件820-3例如是垂直式的發光二極體。更具體而言,第一發光元件820-1除了位於第一頂部822-1的第一電極826-1之外,更包括位於第一底部824-1的一第二電極828-1,其中第一電極826-1例如是發光二極體的P極,而第二電極828-1例如是發光二極體的N極。第二發光元件820-2除了位於第二頂部822-2的第三電極826-2之外,更包括位於第二底部824-2的一第四電極828-2,其中第三電極826-2例如是發光二極體的P極,而第四電極828-2例如是發光二極體的N極。此外,第二發光元件820-3 除了位於第二頂部822-3的第三電極826-3之外,更包括位於第二底部824-3的一第四電極828-3,其中第三電極826-3例如是發光二極體的P極,而第四電極828-3例如是發光二極體的N極。 In the present embodiment, the first light-emitting element 820-1, the second light-emitting element 820-2, and the second light-emitting element 820-3 are, for example, vertical light-emitting diodes. More specifically, the first light-emitting element 820-1 includes a second electrode 827-1 located at the first bottom portion 824-1, in addition to the first electrode 826-1 of the first top portion 822-1, wherein One electrode 826-1 is, for example, a P pole of a light emitting diode, and the second electrode 820-1 is, for example, an N pole of a light emitting diode. The second light emitting element 820-2 includes a fourth electrode 828-2 located at the second bottom portion 824-2 in addition to the third electrode 826-2 of the second top portion 822-2, wherein the third electrode 826-2 For example, it is the P pole of the light emitting diode, and the fourth electrode 828-2 is, for example, the N pole of the light emitting diode. In addition, the second light emitting element 820-3 In addition to the third electrode 826-3 located at the second top portion 822-3, a fourth electrode 828-3 at the second bottom portion 824-3 is further included, wherein the third electrode 826-3 is, for example, a light emitting diode The P pole, and the fourth electrode 828-3 is, for example, the N pole of the light emitting diode.

本實施例可以選擇在移除第一封裝單元801的磊晶基板(未繪示)之後,在第一包封體840-1上製作第二線路層1810,以藉由第二線路層1810串接第二電極828-1,以形成共N極的設計。或者,也可以選擇在移除第二封裝單元802、803的磊晶基板(未繪示)之後,在第二包封體840-2、840-3上製作第四線路層1820,以藉由第四線路層1820串接第四電極828-2或828-3,以形成共N極的設計。在此,第二線路層1810或第四線路層1820例如是由金屬(如金、銅、鋁、鉻、鈦等)或金屬氧化物(如氧化銦錫或氧化銦鋅等)形成的導電層。 In this embodiment, after the epitaxial substrate (not shown) of the first package unit 801 is removed, the second circuit layer 1810 is formed on the first encapsulation body 840-1 to be separated by the second circuit layer 1810. The second electrode 822-1 is connected to form a common N-pole design. Alternatively, after the epitaxial substrate (not shown) of the second package unit 802, 803 is removed, the fourth circuit layer 1820 is formed on the second encapsulations 840-2, 840-3. The fourth circuit layer 1820 is connected in series with the fourth electrode 828-2 or 828-3 to form a common N-pole design. Here, the second wiring layer 1810 or the fourth wiring layer 1820 is, for example, a conductive layer formed of a metal such as gold, copper, aluminum, chromium, titanium, or a metal oxide such as indium tin oxide or indium zinc oxide. .

圖19繪示依照本揭露之一實施例的一種發光元件的封裝結構1900。本實施例的封裝結構1900與前述實施例的封裝結構1800類似,而主要差異在於本實施例的封裝結構1900的第一發光元件820-1、第二發光元件820-2以及第二發光元件820-3為水平式的發光二極體。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 19 illustrates a package structure 1900 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 1900 of the present embodiment is similar to the package structure 1800 of the previous embodiment, and the main difference is the first light-emitting element 820-1, the second light-emitting element 820-2, and the second light-emitting element 820 of the package structure 1900 of the present embodiment. -3 is a horizontal light-emitting diode. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

如圖19所示,本實施例的第一發光元件820-1的第一頂部822-1具有第一電極826-1以及第二電極828-1,且第一電極826-1以及第二電極828-1分別藉由第一導電件830-1電性連接至 相應的第一電極接點816-1。第二發光元件820-2的第二頂部822-2具有第三電極826-2以及第四電極828-2,且第三電極826-2以及第四電極828-2分別藉由第二導電件830-2電性連接至相應的第二電極接點816-2。此外,第二發光元件820-3的第二頂部822-3具有第三電極826-3以及第四電極828-3,且第三電極826-3以及第四電極828-3分別藉由第二導電件830-3電性連接至相應的第二電極接點816-3。 As shown in FIG. 19, the first top portion 822-1 of the first light emitting element 820-1 of the present embodiment has a first electrode 826-1 and a second electrode 827-1, and the first electrode 826-1 and the second electrode 828-1 is electrically connected to the first conductive member 830-1 to A corresponding first electrode contact 816-1. The second top portion 822-2 of the second light emitting element 820-2 has a third electrode 826-2 and a fourth electrode 828-2, and the third electrode 826-2 and the fourth electrode 828-2 respectively pass the second conductive member 830-2 is electrically connected to the corresponding second electrode contact 816-2. In addition, the second top portion 822-3 of the second light emitting element 820-3 has a third electrode 826-3 and a fourth electrode 828-3, and the third electrode 826-3 and the fourth electrode 828-3 are respectively The conductive member 830-3 is electrically connected to the corresponding second electrode contact 816-3.

圖20繪示依照本揭露之一實施例的一種發光元件的封裝結構2000。本實施例的封裝結構2000與前述實施例的封裝結構800類似,而主要差異在於本實施例的封裝結構2000的第二載板810-2的背面814-2以及第二載板810-3的背面814-3具有多個光學微結構2010。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 20 illustrates a package structure 2000 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2000 of the present embodiment is similar to the package structure 800 of the foregoing embodiment, and the main difference is the back surface 814-2 of the second carrier 810-2 of the package structure 2000 of the present embodiment and the second carrier 810-3. The back side 814-3 has a plurality of optical microstructures 2010. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,如圖20所示,本實施例的光學微結構2010例如是形成於第二載板810-2的背面814-2以及第二載板810-3的背面814-3的多個微透鏡或多個光調製圖案。換言之,本實施例可以在封裝結構2000中使用微透鏡或光調製圖案等可產生聚光或特定光學效果的光學微結構2010,使第一發光元件820-1、第二發光元件820-2以及820-3的出光角度更收斂。 More specifically, as shown in FIG. 20, the optical microstructure 2010 of the present embodiment is, for example, formed on the back surface 814-2 of the second carrier 810-2 and the back surface 814-3 of the second carrier 810-3. One microlens or multiple light modulation patterns. In other words, the present embodiment can use the micro-lens or light modulation pattern or the like to generate a condensed or specific optical effect of the optical microstructure 2010 in the package structure 2000, such that the first illuminating element 820-1, the second illuminating element 820-2, and The light angle of 820-3 is more convergent.

圖21繪示依照本揭露之一實施例的一種發光元件的封裝結構2100。本實施例的封裝結構2100與前述實施例的封裝結構 800類似,而主要差異在於本實施例的封裝結構2100更包括一散熱片2110,配置於第一載板810-1的背面814-1,以藉由散熱片2110來對封裝結構2100提供良好的散熱效果。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 21 illustrates a package structure 2100 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2100 of the embodiment and the package structure of the foregoing embodiment The main difference is that the package structure 2100 of the present embodiment further includes a heat sink 2110 disposed on the back surface 814-1 of the first carrier 810-1 to provide a good package structure 2100 by the heat sink 2110. heat radiation. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

圖22繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構2200。在本實施例中,藉由覆晶接合技術搭配增層(build-up)法,形成具有發光元件陣列且相互堆疊的多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。本揭露提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,本揭露還可針對導光及混光等光學品質議題提出解決方案。 FIG. 22 illustrates a package structure 2200 of a light-emitting element that can realize full color display according to an embodiment of the present disclosure. In the present embodiment, a plurality of package units having an array of light-emitting elements and stacked on each other are formed by a flip chip bonding technique in conjunction with a build-up method. For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. The package structure of the light-emitting element proposed by the disclosure has a simple and rapid process and is suitable for mass production. At the same time, the disclosure can also propose solutions for optical quality issues such as light guiding and light mixing.

如圖22所示,本揭露提出的發光元件的封裝結構2200包括一載板2210、多個封裝單元2202以及一內連線結構2250。載板2210具有一承載面2212。在此,載板2210例如是半導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片(Drive IC)。 As shown in FIG. 22, the package structure 2200 of the light-emitting element of the present disclosure includes a carrier 2210, a plurality of package units 2202, and an interconnect structure 2250. The carrier 2210 has a bearing surface 2212. Here, the carrier 2210 is, for example, a semiconductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving IC including an electronic circuit.

所述多個封裝單元2202依序堆疊於承載面2212上,且各封裝單元2202包括一包封體2240、多個發光元件2220以及多個導電凸塊2230。包封體2240具有一第一表面2242以及相對的一第二表面2244,其中上層的包封體2240以第二表面2244接合 至下層的另一封裝單元2202的包封體2240的第一表面2242。所述多個發光元件2220呈陣列排列而埋入包封體2240的第一表面2242。 The plurality of package units 2202 are sequentially stacked on the carrying surface 2212 , and each of the package units 2202 includes an encapsulant 2240 , a plurality of light emitting elements 2220 , and a plurality of conductive bumps 2230 . The encapsulation 2240 has a first surface 2242 and an opposite second surface 2244, wherein the upper encapsulation 2240 is joined by the second surface 2244. The first surface 2242 of the encapsulation 2240 of the other encapsulation unit 2202 of the lower layer. The plurality of light emitting elements 2220 are arranged in an array and buried in the first surface 2242 of the encapsulation 2240.

各發光元件2220包括面向載板2210的一頂部2222、相對於頂部2222的一底部2224以及位於頂部2222的一第一電極2226。包封體2240的第一表面2242與各發光元件2220的底部2224共平面。所述多個導電凸塊2230埋入包封體2240的第二表面2244。內連線結構2250位於所述多個封裝單元2202的包封體2240內,且內連線結構2250包括多個第一線路層2252以及多個導通孔2254。所述多個第一線路層2252配置於相鄰的兩包封體2240之間或是相鄰的載板2210與包封體2240之間,並且分別藉由導電凸塊2230電性連接至相應的發光元件2220。所述多個導通孔2254貫穿相應的包封體2240,並且電性連接於相應的第一線路層2252之間。 Each of the light-emitting elements 2220 includes a top portion 2222 facing the carrier 2210, a bottom portion 2224 opposite the top portion 2222, and a first electrode 2226 at the top portion 2222. The first surface 2242 of the encapsulation 2240 is coplanar with the bottom 2224 of each of the light emitting elements 2220. The plurality of conductive bumps 2230 are buried in the second surface 2244 of the encapsulation 2240. The interconnect structure 2250 is located within the encapsulation 2240 of the plurality of package units 2202, and the interconnect structure 2250 includes a plurality of first circuit layers 2252 and a plurality of vias 2254. The plurality of first circuit layers 2252 are disposed between the adjacent two encapsulants 2240 or between the adjacent carrier 2210 and the encapsulation 2240, and are electrically connected to the corresponding by the conductive bumps 2230, respectively. Light-emitting element 2220. The plurality of vias 2254 extend through the respective encapsulants 2240 and are electrically connected between the respective first circuit layers 2252.

在本實施例中,各封裝單元2202的發光元件2220例如是同一磊晶基板上製作的多個發光二極體,而不同封裝單元2202的發光元件2220適於發出不同顏色的光線。 In this embodiment, the light-emitting elements 2220 of the package units 2202 are, for example, a plurality of light-emitting diodes fabricated on the same epitaxial substrate, and the light-emitting elements 2220 of the different package units 2202 are adapted to emit light of different colors.

更具體而言,如圖22所示,本實施例的封裝結構2200包括相互堆疊的一第一封裝單元2202-1、一第二封裝單元2202-2以及一第三封裝單元2202-3。第一封裝單元2202-1的多個發光元件2220-1例如是在同一磊晶基板上製作的多個第一色發光二極體,例如,向圖面上方發出藍光B的發光二極體。第二封裝單元 2202-2的多個發光元件2220-2例如是在同一磊晶基板上製作的多個第二色發光二極體,例如,向圖面上方發出綠光G的發光二極體。第三封裝單元2202-3的多個發光元件2220-3例如是在同一磊晶基板上製作的多個第三色發光二極體,例如,向圖面上方發出紅光R的發光二極體。 More specifically, as shown in FIG. 22, the package structure 2200 of the present embodiment includes a first package unit 2202-1, a second package unit 2202-2, and a third package unit 2202-3 stacked on each other. The plurality of light-emitting elements 2220-1 of the first package unit 2202-1 are, for example, a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate, for example, light-emitting diodes that emit blue light B toward the upper side of the drawing. Second package unit The plurality of light-emitting elements 2220-2 of 2202-2 are, for example, a plurality of second color light-emitting diodes formed on the same epitaxial substrate, for example, a light-emitting diode that emits green light G toward the upper side of the drawing. The plurality of light-emitting elements 2220-3 of the third package unit 2202-3 are, for example, a plurality of third color light-emitting diodes fabricated on the same epitaxial substrate, for example, a light-emitting diode that emits red light R upward. .

圖23A~23G繪示圖22之封裝結構2200的封裝製程。首先,如圖23A所示,將第一層的發光元件2220-1連同磊晶基板2221-1以覆晶接合技術接合至載板2210,其中發光元件2220-1透過導電凸塊2230-1電性連接至載板2210上的第一線路層2252-1。在此步驟中,可選用已知的焊料形成導電凸塊2230-1。此外,可選用非導電膠(Non-Conductive Film)、底膠(underfill)或紫外線接著膠(UV膠)等,將其填入磊晶基板2221-1與載板2210之間,以形成包封體2240-1。 23A-23G illustrate a packaging process of the package structure 2200 of FIG. 22. First, as shown in FIG. 23A, the light-emitting element 2220-1 of the first layer is bonded to the carrier 2210 by flip-chip bonding technology together with the epitaxial substrate 2221-1, wherein the light-emitting element 2220-1 is electrically transmitted through the conductive bump 2230-1. The first line layer 2252-1 is attached to the carrier 2210. In this step, conductive bumps 2230-1 can be formed using known solder. In addition, a non-conductive adhesive (Non-Conductive Film), an underfill or an ultraviolet adhesive (UV adhesive) may be used to fill the between the epitaxial substrate 2221-1 and the carrier 2210 to form an encapsulation. Body 2240-1.

接著,如圖23B所示,利用舉離(Lift-off)技術將磊晶基板2221-1移除。至此,可形成最下層的第一封裝單元2202-1。然後,如圖23C所示,在第一封裝單元2202-1上藉由蝕刻、沉積、印刷、電鍍等可能的步驟製作另一第一線路層2252-2,貫穿包封體2240-1的多個導通孔2254-1,以及多個導電凸塊2230-2。 Next, as shown in FIG. 23B, the epitaxial substrate 2221-1 is removed using a Lift-off technique. So far, the first package unit 2202-1 of the lowermost layer can be formed. Then, as shown in FIG. 23C, another first wiring layer 2252-2 is formed on the first package unit 2202-1 by a possible step of etching, deposition, printing, plating, etc., and the through-package body 2240-1 is inserted. One via hole 2254-1, and a plurality of conductive bumps 2230-2.

之後,重複前述步驟,如圖23D與23E所示,將第二層的發光元件2220-2連同磊晶基板2221-2以覆晶接合技術接合至第一封裝單元2202-1,並且將磊晶基板2221-2移除,以在第一封裝單元2202-1上形成第二封裝單元2202-2。發光元件2220-2透過導 電凸塊2230-2電性連接至第一封裝單元2202-1上的第一線路層2252-2,且第一線路層2252-2可經由導通孔2254-1連接到下層線路。 Thereafter, the foregoing steps are repeated, as shown in FIGS. 23D and 23E, the light-emitting element 2220-2 of the second layer is bonded to the first package unit 2202-1 in a flip-chip bonding technique together with the epitaxial substrate 2221-2, and the epitaxial layer is to be epitaxial. The substrate 2221-2 is removed to form a second package unit 2202-2 on the first package unit 2202-1. Light-emitting element 2220-2 transmits through The electrical bump 2230-2 is electrically connected to the first wiring layer 2252-2 on the first package unit 2202-1, and the first wiring layer 2252-2 can be connected to the lower layer via the via hole 2254-1.

然後,如圖23F所示,在第二封裝單元2202-2上藉由蝕刻、沉積、印刷、電鍍等可能的步驟製作另一第一線路層2252-3,貫穿包封體2240-2的多個導通孔2254-2,以及多個導電凸塊2230-3。 Then, as shown in FIG. 23F, another first circuit layer 2252-3 is formed on the second package unit 2202-2 by a possible step of etching, deposition, printing, plating, etc., and the through-package 2240-2 is penetrated. One via hole 2254-2, and a plurality of conductive bumps 2230-3.

之後,如圖23G所示,將第三層的發光元件2220-3連同磊晶基板2221-3以覆晶接合技術接合至第二封裝單元2202-2,以在第二封裝單元2202-2上形成第三封裝單元2202-3。此時,可以選擇將磊晶基板2221-3移除,或者也可以保留磊晶基板2221-3,以保護最上層的第三封裝單元2202-3,並且增加封裝結構2200的結構強度。發光元件2220-3透過導電凸塊2230-3電性連接至第一封裝單元2202-2上的第一線路層2252-3,且第一線路層2252-3可經由導通孔2254-2連接到下層線路。 Thereafter, as shown in FIG. 23G, the light-emitting element 2220-3 of the third layer is bonded to the second package unit 2202-2 in a flip-chip bonding technique together with the epitaxial substrate 2221-3 to be on the second package unit 2202-2. A third package unit 2202-3 is formed. At this time, the epitaxial substrate 2221-3 may be selectively removed, or the epitaxial substrate 2221-3 may be retained to protect the uppermost third package unit 2202-3, and the structural strength of the package structure 2200 is increased. The light emitting element 2220-3 is electrically connected to the first circuit layer 2252-3 on the first package unit 2202-2 through the conductive bump 2230-3, and the first circuit layer 2252-3 can be connected to the via hole 2254-2. Lower line.

圖24A~24C分別繪示第一封裝單元2202-1的發光元件2220-1、第二封裝單元2202-2的發光元件2220-2以及第三封裝單元2202-3的發光元件2220-3在載板2210的承載面2212(請參考圖22)的垂直投影。由圖24A~24C可知所述發光元件2220-1、發光元件2220-2以及發光元件2220-3在承載面2212上(請參考圖22)的垂直投影相互交錯,且不相互重疊,以構成一面陣列。藉此,可以使下層發光元件在垂直方向的出光不會被他層的遮光元件(如 接點或線路)所遮擋,而斜向的出光則可被他層的遮光元件遮擋,以減少混色的發生。 24A to 24C illustrate the light-emitting element 2220-1 of the first package unit 2202-1, the light-emitting element 2220-2 of the second package unit 2202-2, and the light-emitting element 2220-3 of the third package unit 2202-3, respectively. The vertical projection of the bearing surface 2212 of the plate 2210 (please refer to Figure 22). 24A to 24C, the vertical projections of the light-emitting element 2220-1, the light-emitting element 2220-2, and the light-emitting element 2220-3 on the carrying surface 2212 (refer to FIG. 22) are mutually staggered and do not overlap each other to form one side. Array. Thereby, the light emitted by the lower layer of the light-emitting element in the vertical direction can be prevented from being blocked by the light-shielding element of the layer (eg The contact or line is blocked, and the oblique light is blocked by the shading elements of the layer to reduce the occurrence of color mixing.

圖25繪示依照本揭露之一實施例的一種發光元件的封裝結構2500。本實施例的封裝結構2500與前述實施例的封裝結構2200類似,而主要差異在於本實施例在封裝完成後更在發光元件2220-1以及發光元件2220-2上方形成作為導光結構的多個通孔2510,以維持高出光率。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 25 illustrates a package structure 2500 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2500 of the present embodiment is similar to the package structure 2200 of the previous embodiment, and the main difference is that the present embodiment forms a plurality of light guiding structures over the light-emitting elements 2220-1 and the light-emitting elements 2220-2 after the package is completed. Through hole 2510 to maintain high light output. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,本實施例藉由例如雷射或化學蝕刻移除發光元件2220-1以及發光元件2220-2上方可能存在的第二封裝單元2202-2及/或第三封裝單元2202-3,以形成通孔2510。各通孔2510的一端連接相應的發光元件2220-1的底部2224-1或發光元件2220-2的底部2224-2,並且暴露出發光元件2220-1的底部2224-1或發光元件2220-2的底部2224-2,使得發光元件2220-1發出的藍光B以及發光元件2220-2發出的綠光G能經由通孔2510出射到外界。 More specifically, the present embodiment removes the light emitting element 2220-1 and the second package unit 2202-2 and/or the third package unit 2202-3 that may exist above the light emitting element 2220-2 by, for example, laser or chemical etching. To form a through hole 2510. One end of each of the through holes 2510 is connected to the bottom 2224-1 of the corresponding light emitting element 2220-1 or the bottom portion 2224-2 of the light emitting element 2220-2, and exposes the bottom portion 2224-1 of the light emitting element 2220-1 or the light emitting element 2220-2. The bottom portion 2224-2 allows the blue light B emitted from the light-emitting element 2220-1 and the green light G emitted from the light-emitting element 2220-2 to be emitted to the outside through the through hole 2510.

在本實施例中,由於形成貫穿封裝單元2202-2及/或封裝單元2202-3的通孔2510,因此包封體2240-2、2240-3的材質選擇彈性較大,可以採用透光或不透光的材質。 In this embodiment, since the through holes 2510 are formed through the package unit 2202-2 and/or the package unit 2202-3, the materials of the enclosures 2240-2 and 2240-3 are selected to be more flexible, and light transmission or An opaque material.

圖26繪示依照本揭露之一實施例的一種發光元件的封裝結構2600。本實施例的封裝結構2600與前述實施例的封裝結構 2500類似,而主要差異在於本實施例更在通孔2510內填入高折射率的透光材料2520,以藉由此高折射率的透光材料2520與通孔2510外的包封體2240-2、2240-3產生的全反射實現光波導之效應,傳遞發光元件2220-1發出的藍光B以及發光元件2220-2發出的綠光G。在此,透光材料2520的折射率大於包封體2240-2、2240-3的折射率。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 26 illustrates a package structure 2600 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2600 of the embodiment and the package structure of the foregoing embodiment 2500 is similar, and the main difference is that the present embodiment further fills the through hole 2510 with the high refractive index light transmissive material 2520 to thereby form the high refractive index transparent material 2520 and the encapsulant 2240 outside the through hole 2510. 2. The total reflection generated by 2240-3 realizes the effect of the optical waveguide, and transmits the blue light B emitted from the light-emitting element 2220-1 and the green light G emitted from the light-emitting element 2220-2. Here, the refractive index of the light transmissive material 2520 is greater than the refractive indices of the encapsulants 2240-2, 2240-3. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

圖27繪示依照本揭露之一實施例的一種發光元件的封裝結構2700。本實施例的封裝結構2700與前述實施例的封裝結構2500類似,而主要差異在於本實施例更在通孔2510內壁覆蓋例如金屬等反射材料2530,以藉由反射材料2530反射在通孔2510內傳遞的發光元件2220-1發出的藍光B以及發光元件2220-2發出的綠光G。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 27 illustrates a package structure 2700 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2700 of the present embodiment is similar to the package structure 2500 of the previous embodiment, and the main difference is that the inner wall of the through hole 2510 covers the reflective material 2530 such as metal to reflect on the through hole 2510 by the reflective material 2530. The blue light B emitted from the light-emitting element 2220-1 and the green light G emitted from the light-emitting element 2220-2. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

圖28繪示依照本揭露之一實施例的一種發光元件的封裝結構2800。本實施例的封裝結構2800與前述實施例的封裝結構2500、2600或2700類似,而主要差異在於本實施例更在第三封裝單元2202-3上形成一披覆層2810,並且使得導光結構,如通孔2510、高折射率的透光材料2520(請參考圖26)、反射材料2530(請參考圖27)等貫穿批覆層2810。同理,發光元件2220-3上方也可 以形成類似的導光結構。如此,使得各發光元件2220-1、2220-2、2220-3的發光角度受拘束,以提高整體出光品質。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 28 illustrates a package structure 2800 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2800 of the present embodiment is similar to the package structure 2500, 2600 or 2700 of the foregoing embodiment, and the main difference is that the present embodiment further forms a cladding layer 2810 on the third package unit 2202-3, and the light guiding structure is made. For example, the through hole 2510, the high refractive index light transmissive material 2520 (please refer to FIG. 26), the reflective material 2530 (please refer to FIG. 27), and the like are passed through the batch coating 2810. Similarly, the light-emitting element 2220-3 can also be above To form a similar light guiding structure. In this manner, the light-emitting angles of the respective light-emitting elements 2220-1, 2220-2, and 2220-3 are restrained to improve the overall light-emitting quality. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

圖29繪示依照本揭露之一實施例的一種發光元件的封裝結構2900。本實施例的封裝結構2900與前述實施例的封裝結構2200類似,而主要差異在於本實施例的封裝結構2900更包括一黑矩陣層2910,配置於第三封裝單元2202-3之上,且黑矩陣層2910具有多個透光區2912,分別對應於發光元件2220-1、2220-2、2220-3,以定義出全彩顯示面上的多個畫素區域。在此,黑矩陣層2910例如是表面形成有黑色遮光區域的透明蓋板。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 29 illustrates a package structure 2900 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 2900 of the present embodiment is similar to the package structure 2200 of the previous embodiment, and the main difference is that the package structure 2900 of the present embodiment further includes a black matrix layer 2910 disposed on the third package unit 2202-3 and black. The matrix layer 2910 has a plurality of light transmissive regions 2912 corresponding to the light emitting elements 2220-1, 2220-2, 2220-3, respectively, to define a plurality of pixel regions on the full color display surface. Here, the black matrix layer 2910 is, for example, a transparent cover plate having a black light-shielding region formed on its surface. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

圖30繪示依照本揭露之一實施例的一種發光元件的封裝結構3000。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,以下就本實施例與前述實施例的主要差異點進行說明。 FIG. 30 illustrates a package structure 3000 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar elements in the embodiment, or the elements that have been clearly described are omitted. Therefore, the related description of the elements can be referred to the foregoing embodiment, and the present embodiment and the foregoing The main differences of the embodiments are explained.

在本實施例中,發光元件2220-1、2220-2以及2220-3例如是垂直式的發光二極體。更具體而言,發光元件2220-1除了位 於頂部2222-1的第一電極2226-1之外,更包括位於底部2224-1的一第二電極2228-1,其中第一電極2226-1例如是發光二極體的P極,而第二電極2228-1例如是發光二極體的N極。發光元件2220-2除了位於頂部2222-2的第一電極2226-2之外,更包括位於底部2224-2的一第二電極2228-2,其中第一電極2226-2例如是發光二極體的P極,而第二電極2228-2例如是發光二極體的N極。此外,發光元件2220-3除了位於頂部2222-3的第一電極2226-3之外,更包括位於底部2224-3的一第二電極2228-3,其中第一電極2226-3例如是發光二極體的P極,而第二電極2228-3例如是發光二極體的N極。 In the present embodiment, the light-emitting elements 2220-1, 2220-2, and 2220-3 are, for example, vertical light-emitting diodes. More specifically, the light-emitting element 2220-1 is in addition to the bit In addition to the first electrode 2226-1 of the top portion 2222-1, a second electrode 2228-1 at the bottom portion 2224-1 is further included, wherein the first electrode 2226-1 is, for example, a P pole of the light emitting diode, and the first The two electrodes 2228-1 are, for example, N poles of the light emitting diode. The light-emitting element 2220-2 includes a second electrode 2228-2 at the bottom portion 2224-2 in addition to the first electrode 2226-2 at the top portion 2222-2, wherein the first electrode 2226-2 is, for example, a light-emitting diode. The P pole, and the second electrode 2228-2 is, for example, the N pole of the light emitting diode. In addition, the light-emitting element 2220-3 includes a second electrode 2228-3 at the bottom portion 2224-3 in addition to the first electrode 2226-3 at the top portion 2222-3, wherein the first electrode 2226-3 is, for example, a light-emitting diode The P pole of the polar body, and the second electrode 2228-3 is, for example, the N pole of the light emitting diode.

本實施例可以選擇在移除第一封裝單元2202-1的磊晶基板2221-1(請參考圖23A)之後,在包封體2240-1上製作第二線路層2256-1,以藉由第二線路層2256-1串接第二電極2228-1,以形成共N極的設計。或者,可以選擇在移除第二封裝單元2202-2的磊晶基板(未繪示)之後,在包封體2240-2上製作第二線路層2256-2,以藉由第二線路層2256-2串接第二電極2228-2,以形成共N極的設計。又或者,可以選擇在移除第三封裝單元2202-3的磊晶基板(未繪示)之後,在包封體2240-3上製作第二線路層2256-3,以藉由第二線路層2256-3串接第二電極2228-3,以形成共N極的設計。在此,第二線路層2256-1、2256-2或2256-3例如是由金屬(如金、銅、鋁、鉻、鈦等)或金屬氧化物(如氧化銦錫或氧化銦鋅等)形成的導電層。 In this embodiment, after the epitaxial substrate 2221-1 of the first package unit 2202-1 is removed (please refer to FIG. 23A), the second circuit layer 2256-1 is formed on the encapsulation body 2240-1. The second circuit layer 2256-1 is connected in series with the second electrode 2228-1 to form a common N-pole design. Alternatively, after removing the epitaxial substrate (not shown) of the second package unit 2202-2, the second circuit layer 2256-2 is formed on the encapsulation 2240-2 to be separated by the second circuit layer 2256. -2 is connected in series with the second electrode 2228-2 to form a common N-pole design. Alternatively, after the epitaxial substrate (not shown) of the third package unit 2202-3 is removed, the second circuit layer 2256-3 is formed on the encapsulation 2240-3 to form the second circuit layer. 2256-3 is connected in series with the second electrode 2228-3 to form a common N-pole design. Here, the second wiring layer 2256-1, 2256-2 or 2256-3 is, for example, a metal (such as gold, copper, aluminum, chromium, titanium, etc.) or a metal oxide (such as indium tin oxide or indium zinc oxide). A conductive layer formed.

此外,本實施例的封裝結構更包括絕緣層3010以及3020分別配置於包封體2240-1與2240-2之間以及包封體2240-2與2240-3之間,用以隔絕相應的第二線路層2256-1、2256-2與其他的內連線結構。 In addition, the package structure of the present embodiment further includes insulating layers 3010 and 3020 disposed between the encapsulants 2240-1 and 2240-2 and the encapsulants 2240-2 and 2240-3, respectively, for isolating the corresponding Two circuit layers 2256-1, 2256-2 and other interconnect structures.

圖31繪示依照本揭露之一實施例的一種發光元件的封裝結構3100。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構3100與前述實施例的封裝結構3000類似,而主要差異在於本實施例的封裝結構3100的發光元件2220-1、2220-2、2220-3為水平式的發光二極體。 FIG. 31 illustrates a package structure 3100 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 3100 of the present embodiment is similar to the package structure 3000 of the previous embodiment, and the main difference is that the light-emitting elements 2220-1, 2220-2, and 2220-3 of the package structure 3100 of the present embodiment are horizontal light-emitting diodes. .

如圖31所示,本實施例的發光元件2220-1的頂部2222-1具有第一電極2226-1以及第二電極2228-1,且第一電極2226-1以及第二電極2228-1分別藉由導電凸塊2230-1電性連接至相應的第一線路層2252-1。發光元件2220-2的頂部2222-2具有第一電極2226-2以及第二電極2228-2,且第一電極2226-2以及第二電極2228-2分別藉由導電凸塊2230-2電性連接至相應的第一線路層2252-2。發光元件2220-3的頂部2222-3具有第一電極2226-3以及第二電極2228-3,且第一電極2226-3以及第二電極2228-3分別藉由導電凸塊2230-3電性連接至相應的第一線路層2252-3。 As shown in FIG. 31, the top portion 2222-1 of the light-emitting element 2220-1 of the present embodiment has a first electrode 2226-1 and a second electrode 2228-1, and the first electrode 2226-1 and the second electrode 2228-1 respectively The conductive bumps 2230-1 are electrically connected to the corresponding first circuit layer 2252-1. The top portion 2222-2 of the light-emitting element 2220-2 has a first electrode 2226-2 and a second electrode 2228-2, and the first electrode 2226-2 and the second electrode 2228-2 are electrically connected by the conductive bump 2230-2, respectively. Connected to the corresponding first circuit layer 2252-2. The top portion 2222-3 of the light emitting element 2220-3 has a first electrode 2226-3 and a second electrode 2228-3, and the first electrode 2226-3 and the second electrode 2228-3 are electrically connected by the conductive bump 2230-3, respectively. Connected to the corresponding first circuit layer 2252-3.

圖32繪示依照本揭露之一實施例的一種發光元件的封裝結構3200。本實施例採用了與前述實施例相同的元件符號來表示 相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構3200與前述實施例的封裝結構2200類似,而主要差異在於本實施例的封裝結構3200更包括一散熱片3210,配置於載板2210的背面2214,以藉由散熱片3210來對封裝結構3200提供良好的散熱效果。 FIG. 32 illustrates a package structure 3200 of a light emitting device in accordance with an embodiment of the present disclosure. This embodiment adopts the same component symbols as those of the foregoing embodiment to represent The same or similar components are omitted, or the components that have been clearly described are omitted. Therefore, the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 3200 of the present embodiment is similar to the package structure 2200 of the previous embodiment, and the main difference is that the package structure 3200 of the present embodiment further includes a heat sink 3210 disposed on the back surface 2214 of the carrier 2210 to support the heat sink 3210. To provide a good heat dissipation effect on the package structure 3200.

圖33繪示依照本揭露之一實施例的一種可實現全彩顯示的發光元件的封裝結構3300。在本實施例中,藉由覆晶接合技術形成具有發光元件陣列的封裝單元後,再以疊層(lamination)的方式結合多個封裝單元。例如,可將具有紅色、綠色以及藍色等不同顏色之發光元件的封裝單元堆疊形成全彩微顯示器。各封裝單元本身具有內連線結構,並且藉由內連線結構相互電性連接。本揭露提出的發光元件的封裝結構,其製程簡單、快速,且適於量產。同時,本揭露還可針對導光及混光等光學品質議題提出解決方案。 FIG. 33 illustrates a package structure 3300 of a light-emitting element that can realize full color display according to an embodiment of the present disclosure. In the present embodiment, after the package unit having the light-emitting element array is formed by a flip chip bonding technique, a plurality of package units are bonded in a lamination manner. For example, package units having light-emitting elements of different colors such as red, green, and blue may be stacked to form a full-color microdisplay. Each package unit itself has an interconnect structure and is electrically connected to each other by an interconnect structure. The package structure of the light-emitting element proposed by the disclosure has a simple and rapid process and is suitable for mass production. At the same time, the disclosure can also propose solutions for optical quality issues such as light guiding and light mixing.

如圖33所示,本揭露提出的發光元件的封裝結構3300包括多個封裝單元3302、多個第一導電凸塊3360以及一黏著層3370。所述多個封裝單元3302相互堆疊,且各封裝單元3302包括一包封體3340、多個發光元件3320以及一線路結構3350。包封體3340具有一第一表面3342以及相對的一第二表面3344,其中上層的包封體3340以第一表面3342接合至下層的另一封裝單元3302的包封體3340的第二表面3344。發光元件3320呈陣列排 列而埋入相應的包封體3340的第一表面3342。各發光元件3320包括一頂部3322以及相對於頂部3322的一底部3324,且包封體3340的第一表面3342與各發光元件3320的底部3324共平面。線路結構3350配置於包封體3340內或包封體3340的第二表面3344上。所述多個第一導電凸塊3360配置於相鄰的兩封裝單元3302之間,並且電性連接兩封裝單元3302的線路結構3350。黏著層3370配置於相鄰的兩封裝單元3302之間,並且包覆第一導電凸塊3360。 As shown in FIG. 33, the package structure 3300 of the light-emitting element according to the present disclosure includes a plurality of package units 3302, a plurality of first conductive bumps 3360, and an adhesive layer 3370. The plurality of package units 3302 are stacked on each other, and each package unit 3302 includes an envelope 3340, a plurality of light-emitting elements 3320, and a line structure 3350. The encapsulation 3340 has a first surface 3342 and an opposite second surface 3344, wherein the upper encapsulation 3340 is bonded to the second surface 3344 of the encapsulation 3340 of the other encapsulation unit 3302 of the lower layer by the first surface 3342. . Light-emitting elements 3320 are arranged in an array The first surface 3342 of the corresponding encapsulant 3340 is buried. Each of the light-emitting elements 3320 includes a top portion 3322 and a bottom portion 3324 opposite the top portion 3322, and the first surface 3342 of the envelope body 3340 is coplanar with the bottom portion 3324 of each of the light-emitting elements 3320. The line structure 3350 is disposed within the enclosure 3340 or the second surface 3344 of the enclosure 3340. The plurality of first conductive bumps 3360 are disposed between the adjacent two package units 3302 and electrically connected to the circuit structure 3350 of the two package units 3302. The adhesive layer 3370 is disposed between the adjacent two package units 3302 and covers the first conductive bumps 3360.

在本實施例中,各封裝單元3302的發光元件3320例如是同一磊晶基板上製作的多個發光二極體,而不同封裝單元3302的發光元件3320適於發出不同顏色的光線。 In this embodiment, the light-emitting elements 3320 of the package units 3302 are, for example, a plurality of light-emitting diodes fabricated on the same epitaxial substrate, and the light-emitting elements 3320 of the different package units 3302 are adapted to emit light of different colors.

更具體而言,如圖33所示,本實施例的封裝結構3300包括相互堆疊的一第一封裝單元3302-1、一第二封裝單元3302-2以及一第三封裝單元3302-3。第一封裝單元3302-1的多個發光元件3320-1例如是在同一磊晶基板上製作的多個第一色發光二極體,例如,向圖面上方發出藍光B的發光二極體。第二封裝單元3302-2的多個發光元件3320-2例如是在同一磊晶基板上製作的多個第二色發光二極體,例如,向圖面上方發出綠光G的發光二極體。第三封裝單元3302-3的多個發光元件3320-3例如是在同一磊晶基板上製作的多個第三色發光二極體,例如,向圖面上方發出紅光R的發光二極體。 More specifically, as shown in FIG. 33, the package structure 3300 of the present embodiment includes a first package unit 3302-1, a second package unit 3302-2, and a third package unit 3302-3 stacked on each other. The plurality of light-emitting elements 3320-1 of the first package unit 3302-1 are, for example, a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate, for example, light-emitting diodes that emit blue light B toward the upper side of the drawing. The plurality of light-emitting elements 3320-2 of the second package unit 3302-2 are, for example, a plurality of second color light-emitting diodes fabricated on the same epitaxial substrate, for example, a light-emitting diode that emits green light G toward the upper side of the drawing. . The plurality of light-emitting elements 3320-3 of the third package unit 3302-3 are, for example, a plurality of third color light-emitting diodes fabricated on the same epitaxial substrate, for example, a light-emitting diode that emits red light R upward. .

本實施例的發光元件3320-1、3320-2、3320-3為水平式 的發光二極體。換言之,發光元件3320-1的頂部3322-1具有第一電極3326-1以及第二電極3328-1,且第一電極3326-1以及第二電極3328-1分別電性連接至相應的線路結構3350。此外,發光元件3320-1的底部3324-1覆蓋絕緣層3305,以避免發光元件3320-1的底部3324-1與線路結構3350發生短路。發光元件3320-2的頂部3322-2具有第一電極3326-2以及第二電極3328-2,且第一電極3326-2以及第二電極3328-2分別電性連接至相應的線路結構3350。此外,發光元件3320-2的底部3324-2覆蓋絕緣層3305,以避免發光元件3320-2的底部3324-2與線路結構3350發生短路。發光元件3320-3的頂部3322-3具有第一電極3326-3以及第二電極3328-3,且第一電極3326-3以及第二電極3328-3分別電性連接至相應的線路結構3350。此外,發光元件3320-3的底部3324-3覆蓋絕緣層3305,以避免發光元件3320-3的底部3324-3與線路結構3350發生短路。 The light-emitting elements 3320-1, 3320-2, and 3320-3 of the present embodiment are horizontal Light-emitting diode. In other words, the top portion 3322-1 of the light-emitting element 3320-1 has the first electrode 3326-1 and the second electrode 3328-1, and the first electrode 3326-1 and the second electrode 3328-1 are electrically connected to the corresponding line structures, respectively. 3350. Further, the bottom portion 3324-1 of the light-emitting element 3320-1 covers the insulating layer 3305 to prevent the bottom portion 3324-1 of the light-emitting element 3320-1 from being short-circuited with the wiring structure 3350. The top portion 3322-2 of the light-emitting element 3320-2 has a first electrode 3326-2 and a second electrode 3328-2, and the first electrode 3326-2 and the second electrode 3328-2 are electrically connected to the corresponding line structure 3350, respectively. In addition, the bottom portion 3324-2 of the light-emitting element 3320-2 covers the insulating layer 3305 to prevent the bottom portion 3324-2 of the light-emitting element 3320-2 from being short-circuited with the line structure 3350. The top portion 3322-3 of the light-emitting element 3320-3 has a first electrode 3326-3 and a second electrode 3328-3, and the first electrode 3326-3 and the second electrode 3328-3 are electrically connected to the corresponding line structure 3350, respectively. Further, the bottom portion 3324-3 of the light-emitting element 3320-3 covers the insulating layer 3305 to prevent the bottom portion 3324-3 of the light-emitting element 3320-3 from being short-circuited with the wiring structure 3350.

在本實施例中,絕緣層3305可以是以額外的製程製作,或是在發光元件3320-1、3320-2、3320-3的磊晶製程中先行製作非佈植層,以作為絕緣層3305。 In this embodiment, the insulating layer 3305 may be fabricated in an additional process, or a non-implanting layer may be formed in the epitaxial process of the light-emitting elements 3320-1, 3320-2, and 3320-3 as the insulating layer 3305. .

圖34A~34G繪示圖33之封裝結構3300的封裝製程。首先,如圖34A所示,提供磊晶基板3321-1,且磊晶基板3321-1上具有藉由磊晶製程形成的多個發光元件3320-1。並且,如圖34B所示,在磊晶基板3321-1上方覆蓋一層非導電層,以形成包封體3340-1,並且並透過雷射或蝕刻來移除包封體3340-1,以在包封 體3340-1內形成通孔3349-1。所述通孔3349-1可以暴露部分的發光元件3320-1或貫穿包封體3340-1。在此,非導電層例如是非導電膠(Non-Conductive Film)、底膠(underfill)或紫外線接著膠(UV膠)等。 34A-34G illustrate a packaging process of the package structure 3300 of FIG. First, as shown in FIG. 34A, an epitaxial substrate 3321-1 is provided, and the epitaxial substrate 3321-1 has a plurality of light-emitting elements 3320-1 formed by an epitaxial process. And, as shown in FIG. 34B, a layer of non-conductive layer is overlaid on the epitaxial substrate 3321-1 to form an encapsulation body 3340-1, and the encapsulation body 3340-1 is removed by laser or etching to Encapsulation A through hole 3349-1 is formed in the body 3340-1. The through hole 3349-1 may expose a portion of the light emitting element 3320-1 or penetrate the envelope 3340-1. Here, the non-conductive layer is, for example, a non-conductive film, an underfill or an ultraviolet glue (UV glue).

接著,如圖34C所示,於通孔3349-1中填入導電物質(例如:銅)並於包封體3340-1的第二表面3344-1上製作電路,以形成線路結構3350。之後,如圖34D所示,利用舉離(Lift-off)技術將磊晶基板3321-1移除,並且可選擇在發光元件3320-1的底部3324-1形成絕緣層3305。至此,可形成最下層的第一封裝單元3302-1。 Next, as shown in FIG. 34C, a conductive material (for example, copper) is filled in the via hole 3349-1 and a circuit is formed on the second surface 3344-1 of the encapsulant 3340-1 to form a wiring structure 3350. Thereafter, as shown in FIG. 34D, the epitaxial substrate 3321-1 is removed by a Lift-off technique, and an insulating layer 3305 may be formed at the bottom 3324-1 of the light-emitting element 3320-1. So far, the first package unit 3302-1 of the lowermost layer can be formed.

然後,如圖34E所示,可以重複前述圖34A~34D的步驟,以形成第二封裝單元3302-2與第三封裝單元3302-3。並且,可在第一封裝單元3302-1、第二封裝單元3302-2與第三封裝單元3302-3的適當位置上形成第一導電凸塊3360。接著,可如圖34F所示,堆疊第一封裝單元3302-1、第二封裝單元3302-2與第三封裝單元3302-3,使其藉由第一導電凸塊3360相互電性連接。並且,在第一封裝單元3302-1與第二封裝單元3302-2之間,以及第二封裝單元3302-2與第三封裝單元3302-3之間形成黏著層3370,使黏著層3370包覆第一導電凸塊3360。至此,大致完成本實施例之封裝結構3300的製作。 Then, as shown in FIG. 34E, the foregoing steps of FIGS. 34A to 34D may be repeated to form a second package unit 3302-2 and a third package unit 3302-3. Also, the first conductive bumps 3360 may be formed at appropriate positions of the first package unit 3302-1, the second package unit 3302-2, and the third package unit 3302-3. Then, as shown in FIG. 34F, the first package unit 3302-1, the second package unit 3302-2, and the third package unit 3302-3 are stacked to be electrically connected to each other by the first conductive bumps 3360. Moreover, an adhesive layer 3370 is formed between the first package unit 3302-1 and the second package unit 3302-2, and between the second package unit 3302-2 and the third package unit 3302-3, so that the adhesive layer 3370 is covered. First conductive bump 3360. So far, the fabrication of the package structure 3300 of the present embodiment has been substantially completed.

另外,為了將封裝結構3300連接到外部電路,亦可如圖34G所示,在封裝結構3300的頂部或底部形成與線路結構3350 相互電性連接的第二導電凸塊3380。 In addition, in order to connect the package structure 3300 to an external circuit, as shown in FIG. 34G, a line structure 3350 may be formed on the top or bottom of the package structure 3300. Second conductive bumps 3380 electrically connected to each other.

圖35A~35C分別繪示第一封裝單元3302-1的發光元件3320-1、第二封裝單元3302-2的發光元件3320-2以及第三封裝單元3302-3的發光元件3320-3在垂直於出光方向的平面上的垂直投影。由圖35A~35C可知所述發光元件3320-1、發光元件3320-2以及發光元件3320-3在平面上的垂直投影相互交錯,且不相互重疊,以構成一面陣列。藉此,可以使下層發光元件在垂直方向的出光不會被他層的遮光元件(如接點或線路)所遮擋,而斜向的出光則可被他層的遮光元件遮擋,以減少混色的發生。 35A to 35C illustrate the light-emitting elements 3320-1 of the first package unit 3302-1, the light-emitting elements 3320-2 of the second package unit 3302-2, and the light-emitting elements 3320-3 of the third package unit 3302-3, respectively. Vertical projection on a plane in the direction of light exit. 35A to 35C, the vertical projections of the light-emitting elements 3320-1, the light-emitting elements 3320-2, and the light-emitting elements 3320-3 on the plane are interlaced with each other and do not overlap each other to form an array of one side. Thereby, the light emitted by the lower layer light-emitting element in the vertical direction can be blocked by the light-shielding elements of other layers (such as contacts or lines), and the oblique light output can be blocked by the light-shielding elements of the other layer to reduce the color mixture. occur.

當然,在其他實施例中,由於發光元件3320-1、3320-2、3320-3的尺寸厚度甚小(約3um),疊層後對出光的影響有限,因此,第一封裝單元3302-1的發光元件3320-1、第二封裝單元3302-2的發光元件3320-2以及第三封裝單元3302-3的發光元件3320-3也可能具有相同的佈局,亦即,在垂直方向上相互對齊,而在所述平面上的垂直投影部分重疊或完全重疊。 Of course, in other embodiments, since the size of the light-emitting elements 3320-1, 3320-2, and 3320-3 is very small (about 3 um), the influence on the light output after lamination is limited, and therefore, the first package unit 3302-1 The light-emitting element 3320-1, the light-emitting element 3320-2 of the second package unit 3302-2, and the light-emitting element 3320-3 of the third package unit 3302-3 may also have the same layout, that is, aligned with each other in the vertical direction. And the vertical projections on the plane partially overlap or completely overlap.

圖36繪示依照本揭露之一實施例的一種發光元件的封裝結構3600。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構3600與前述實施例的封裝結構3300類似,而主要差異在於本實施例在完成封裝結構3300的製作之後,更將封裝結構3300藉由第二導電凸塊3380接合至載板3310。 FIG. 36 illustrates a package structure 3600 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 3600 of the present embodiment is similar to the package structure 3300 of the previous embodiment, and the main difference is that after the fabrication of the package structure 3300 is completed, the package structure 3300 is bonded to the carrier by the second conductive bumps 3380. 3310.

在本實施例中,發光元件3320-1、3320-2、3320-3為頂部出光型的發光二極體。亦即,發光元件3320-1的出光方向與第一電極3326-1以及第二電極3328-1同向,發光元件3320-2的出光方向與第一電極3326-2以及第二電極3328-2同向,而發光元件3320-3的出光方向與第一電極3326-3以及第二電極3328-3同向。因此,各包封體3340的第一表面3342朝向載板3310,其中最下層的包封體3340的線路結構3350經由第二導電凸塊3380電性連接至載板3310。在此,載板3310例如是半導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片(Drive IC)。 In the present embodiment, the light-emitting elements 3320-1, 3320-2, and 3320-3 are top-emitting type light-emitting diodes. That is, the light-emitting direction of the light-emitting element 3320-1 is the same as that of the first electrode 3326-1 and the second electrode 3328-1, and the light-emitting direction of the light-emitting element 3320-2 is opposite to the first electrode 3326-2 and the second electrode 3328-2. In the same direction, the light-emitting direction of the light-emitting element 3320-3 is in the same direction as the first electrode 3326-3 and the second electrode 3328-3. Therefore, the first surface 3342 of each of the encapsulants 3340 faces the carrier 3310, and the line structure 3350 of the lowermost encapsulant 3340 is electrically connected to the carrier 3310 via the second conductive bumps 3380. Here, the carrier 3310 is, for example, a semiconductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving IC including an electronic circuit.

圖37繪示依照本揭露之一實施例的一種發光元件的封裝結構3700。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構3700與前述實施例的封裝結構3600類似,而主要差異在於兩者的出光方向相反。 FIG. 37 illustrates a package structure 3700 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 3700 of the present embodiment is similar to the package structure 3600 of the previous embodiment, with the main difference being that the light-emitting directions of the two are opposite.

更具體而言,本實施例的發光元件3320-1、3320-2、3320-3為底部出光型的發光二極體。亦即,發光元件3320-1的出光方向與第一電極3326-1以及第二電極3328-1反向,發光元件3320-2的出光方向與第一電極3326-2以及第二電極3328-2反向,而發光元件3320-3的出光方向與第一電極3326-3以及第二電極3328-3反向。因此,各包封體3340的第二表面3344朝向載板3310,其 中最下層的包封體3340的線路結構3350經由第二導電凸塊3380電性連接至載板3310。在此,載板3310例如是半導體基板、玻璃基板、線路基板或其他適用的各類基板,其中半導體基板還可以是包含電子電路的驅動晶片(Drive IC)。 More specifically, the light-emitting elements 3320-1, 3320-2, and 3320-3 of the present embodiment are bottom-emitting type light-emitting diodes. That is, the light-emitting direction of the light-emitting element 3320-1 is opposite to the first electrode 3326-1 and the second electrode 3328-1, and the light-emitting direction of the light-emitting element 3320-2 is opposite to the first electrode 3326-2 and the second electrode 3328-2. In the opposite direction, the light-emitting direction of the light-emitting element 3320-3 is opposite to the first electrode 3326-3 and the second electrode 3328-3. Therefore, the second surface 3344 of each of the encapsulants 3340 faces the carrier 3310, which The wiring structure 3350 of the lowermost encapsulation 3340 is electrically connected to the carrier 3310 via the second conductive bumps 3380. Here, the carrier 3310 is, for example, a semiconductor substrate, a glass substrate, a wiring substrate, or other suitable types of substrates, wherein the semiconductor substrate may also be a driving IC including an electronic circuit.

圖38繪示依照本揭露之一實施例的一種發光元件的封裝結構3800。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構3800與前述實施例的封裝結構3300類似,而主要差異在於本實施例在製作最下層的第一封裝單元3302-1時,保留而不移除磊晶基板3321-1,以藉由磊晶基板3321-1在後續製程中對結構提供較佳的支撐。同時,磊晶基板3321-1也可保護發光元件3320-1。 FIG. 38 illustrates a package structure 3800 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 3800 of the present embodiment is similar to the package structure 3300 of the foregoing embodiment, and the main difference is that the present embodiment retains and does not remove the epitaxial substrate 3321-1 when the lowermost first package unit 3302-1 is fabricated. The structure is preferably supported by the epitaxial substrate 3321-1 in a subsequent process. At the same time, the epitaxial substrate 3321-1 can also protect the light-emitting element 3320-1.

圖39繪示依照本揭露之一實施例的一種發光元件的封裝結構3900。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,以下就本實施例與前述實施例的主要差異點進行說明。本實施例的封裝結構3900與前述實施例的封裝結構3300類似,而主要差異在於本實施例的發光元件3320-1、3320-2以及3320-3為垂直式的發光二極體。 FIG. 39 illustrates a package structure 3900 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar elements in the embodiment, or the elements that have been clearly described are omitted. Therefore, the related description of the elements can be referred to the foregoing embodiment, and the present embodiment and the foregoing The main differences of the embodiments are explained. The package structure 3900 of the present embodiment is similar to the package structure 3300 of the previous embodiment, and the main difference is that the light-emitting elements 3320-1, 3320-2, and 3320-3 of the present embodiment are vertical light-emitting diodes.

更具體而言,發光元件3320-1包括位於頂部3322-1的第一電極3326-1以及位於底部3324-1的第二電極3328-1,其中第一 電極3326-1例如是發光二極體的P極,而第二電極3328-1例如是發光二極體的N極。發光元件3320-2包括位於頂部3322-2的第一電極3326-2以及位於底部3324-2的第二電極3328-2,其中第一電極3326-2例如是發光二極體的P極,而第二電極3328-2例如是發光二極體的N極。此外,發光元件3320-3包括位於頂部3322-3的第一電極3326-3以及位於底部3324-3的第二電極3328-3,其中第一電極3326-3例如是發光二極體的P極,而第二電極3328-3例如是發光二極體的N極。 More specifically, the light-emitting element 3320-1 includes a first electrode 3326-1 at the top 3322-1 and a second electrode 3328-1 at the bottom 3324-1, wherein the first The electrode 3326-1 is, for example, the P pole of the light emitting diode, and the second electrode 3328-1 is, for example, the N pole of the light emitting diode. The light-emitting element 3320-2 includes a first electrode 3326-2 at the top portion 3322-2 and a second electrode 3328-2 at the bottom portion 3324-2, wherein the first electrode 3326-2 is, for example, a P-pole of the light-emitting diode, and The second electrode 3328-2 is, for example, an N pole of a light emitting diode. Further, the light-emitting element 3320-3 includes a first electrode 3326-3 at the top 3322-3 and a second electrode 3328-3 at the bottom portion 3324-3, wherein the first electrode 3326-3 is, for example, a P-pole of the light-emitting diode And the second electrode 3328-3 is, for example, an N pole of the light emitting diode.

圖40繪示依照本揭露之一實施例的一種發光元件的封裝結構4000。本實施例的封裝結構4000與前述實施例的封裝結構3300類似,而主要差異在於本實施例在封裝完成後更在發光元件3320-1、3320-2、3320-3上方形成作為導光結構的多個通孔4010,以維持高出光率。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 40 illustrates a package structure 4000 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 4000 of the present embodiment is similar to the package structure 3300 of the foregoing embodiment, and the main difference is that the present embodiment is formed as a light guiding structure over the light-emitting elements 3320-1, 3320-2, and 3320-3 after the package is completed. A plurality of through holes 4010 are provided to maintain a high light extraction rate. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,本實施例藉由例如雷射或化學蝕刻移除發光元件3320-1、3320-2、3320-3上方可能存在的包封體3340以及黏著層3370,以形成通孔4010。各通孔4010的一端連接並且暴露出相應的發光元件3320-1的頂部3322-1、發光元件3320-2的頂部3322-2或發光元件3320-3的頂部3322-3,使得發光元件3320-1發出的藍光B、發光元件3320-2發出的綠光G以及發光元件3320-3發出的紅光R能經由通孔4010出射到外界。 More specifically, the present embodiment removes the encapsulant 3340 and the adhesive layer 3370 that may exist above the light-emitting elements 3320-1, 3320-2, 3320-3 by, for example, laser or chemical etching to form the vias 4010. One end of each of the through holes 4010 is connected and exposes the top 3322-1 of the corresponding light emitting element 3320-1, the top 3322-2 of the light emitting element 3320-2, or the top 3322-3 of the light emitting element 3320-3, so that the light emitting element 3320- The blue light B emitted by the light, the green light G emitted from the light-emitting element 3320-2, and the red light R emitted from the light-emitting element 3320-3 can be emitted to the outside through the through hole 4010.

在本實施例中,由於形成貫穿包封體3340以及黏著層3370的通孔4010,因此包封體3340以及黏著層3370的材質選擇彈性較大,可以採用透光或不透光的材質。 In the present embodiment, since the through holes 4010 penetrating the envelope 3340 and the adhesive layer 3370 are formed, the material of the encapsulant 3340 and the adhesive layer 3370 is selected to have high elasticity, and a material that transmits light or is opaque can be used.

圖41繪示依照本揭露之一實施例的一種發光元件的封裝結構4100。本實施例的封裝結構4100與前述實施例的封裝結構4000類似,而主要差異在於兩者的出光方向相反,因此所形成的通孔位置也需相應調整。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。 FIG. 41 illustrates a package structure 4100 of a light emitting device in accordance with an embodiment of the present disclosure. The package structure 4100 of the present embodiment is similar to the package structure 4000 of the previous embodiment, and the main difference is that the light-emitting directions of the two are opposite, so the position of the through-holes to be formed also needs to be adjusted accordingly. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again.

更具體而言,本實施例藉由例如雷射或化學蝕刻移除發光元件3320-2、3320-3上方可能存在的包封體3340以及黏著層3370,以形成通孔4110。各通孔4110的一端連接並且暴露出相應的發光元件3320-2的底部3324-2或發光元件3320-3的底部3324-3,使得發光元件3320-2發出的綠光G以及發光元件3320-3發出的紅光R能經由通孔4110出射到外界。 More specifically, the present embodiment removes the encapsulant 3340 and the adhesive layer 3370 which may exist above the light-emitting elements 3320-2, 3320-3 by, for example, laser or chemical etching to form the vias 4110. One end of each of the through holes 4110 is connected and exposes the bottom portion 3324-2 of the corresponding light emitting element 3320-2 or the bottom portion 3324-3 of the light emitting element 3320-3, such that the green light G emitted by the light emitting element 3320-2 and the light emitting element 3320- The red light R emitted by 3 can be emitted to the outside through the through hole 4110.

圖42繪示依照本揭露之一實施例的一種發光元件的封裝結構4200。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構4200與前述實施例的封裝結構4000類似,而主要差異在於本實施例更在通孔4010內填入高折射率的透光材料4020,以藉由此高折射率的透光材料4020與通孔4010外的包封體3340產生 的全反射實現光波導之效應,傳遞發光元件3320-1發出的藍光B、發光元件3320-2發出的綠光G以及發光元件3320-3發出的紅光R。在此,透光材料4020的折射率大於包封體3340的折射率。 FIG. 42 illustrates a package structure 4200 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 4200 of the present embodiment is similar to the package structure 4000 of the previous embodiment, and the main difference is that the present embodiment further fills the through-hole 4010 with a high refractive index light transmissive material 4020 to thereby pass through the high refractive index. The light material 4020 is generated from the encapsulant 3340 outside the through hole 4010. The total reflection realizes the effect of the optical waveguide, and transmits the blue light B emitted from the light-emitting element 3320-1, the green light G emitted from the light-emitting element 3320-2, and the red light R emitted from the light-emitting element 3320-3. Here, the refractive index of the light transmissive material 4020 is greater than the refractive index of the encapsulant 3340.

當然,圖41所示的封裝結構4100也可以採用本實施例的設計,在其通孔4010內填入透光材料4020,以達到類似的效果。 Of course, the package structure 4100 shown in FIG. 41 can also adopt the design of the embodiment, and the light-transmitting material 4020 is filled in the through hole 4010 to achieve a similar effect.

圖43繪示依照本揭露之一實施例的一種發光元件的封裝結構4300。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構4300與前述實施例的封裝結構4000類似,而主要差異在於本實施例更在通孔4010內壁覆蓋例如金屬等反射材料4030,以藉由反射材料4030反射在通孔4010內傳遞的發光元件3320-1發出的藍光B、發光元件3320-2發出的綠光G以及發光元件3320-3發出的紅光R。 FIG. 43 illustrates a package structure 4300 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 4300 of the present embodiment is similar to the package structure 4000 of the previous embodiment, and the main difference is that the inner wall of the through hole 4010 covers the reflective material 4030 such as metal to reflect on the through hole 4010 by the reflective material 4030. The blue light B emitted from the light-emitting element 3320-1 transmitted therein, the green light G emitted from the light-emitting element 3320-2, and the red light R emitted from the light-emitting element 3320-3.

當然,圖41所示的封裝結構4100也可以採用本實施例的設計,在其通孔4010內壁覆蓋例如金屬等反射材料4030,以達到類似的效果。 Of course, the package structure 4100 shown in FIG. 41 can also adopt the design of the embodiment, and the inner wall of the through hole 4010 is covered with a reflective material 4030 such as metal to achieve a similar effect.

圖44繪示依照本揭露之一實施例的一種發光元件的封裝結構4400。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構4400與前述實施例的封裝結構4000、4200或4300類似, 而主要差異在於本實施例更在第三封裝單元3302-3上形成一披覆層4410,並且使得導光結構,如通孔4010、高折射率的透光材料4020(請參考圖42)、反射材料4030(請參考圖42)等貫穿批覆層4410。如此,使得各發光元件3320-1、3320-2、3320-3的發光角度受拘束,以提高整體出光品質。 FIG. 44 illustrates a package structure 4400 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 4400 of the present embodiment is similar to the package structure 4000, 4200 or 4300 of the previous embodiment. The main difference is that the present embodiment further forms a cladding layer 4410 on the third package unit 3302-3, and makes the light guiding structure, such as the through hole 4010, the high refractive index light transmissive material 4020 (please refer to FIG. 42), The reflective material 4030 (please refer to FIG. 42) or the like penetrates the batch layer 4410. In this manner, the light-emitting angles of the respective light-emitting elements 3320-1, 3320-2, and 3320-3 are restrained to improve the overall light-emitting quality.

圖45繪示依照本揭露之一實施例的一種發光元件的封裝結構4500。本實施例採用了與前述實施例相同的元件符號來表示相同或類似的元件,或省略了已經清楚說明的元件,因此該些元件的相關說明可參見前述實施例,於此不再贅述。本實施例的封裝結構4500與前述實施例的封裝結構3300類似,而主要差異在於本實施例的封裝結構4500更包括一黑矩陣層4510,配置於第三封裝單元3302-3之上,且黑矩陣層4510具有多個透光區4512,分別對應於發光元件3320-1、3320-2、3320-3,以定義出全彩顯示面上的多個畫素區域。在此,黑矩陣層4510例如是表面形成有黑色遮光區域的透明蓋板。 FIG. 45 illustrates a package structure 4500 of a light emitting device in accordance with an embodiment of the present disclosure. The same reference numerals are used to designate the same or similar components, or the components that have been clearly described are omitted, and the related description of the components can be referred to the foregoing embodiments, and details are not described herein again. The package structure 4500 of the present embodiment is similar to the package structure 3300 of the previous embodiment, and the main difference is that the package structure 4500 of the present embodiment further includes a black matrix layer 4510 disposed on the third package unit 3302-3 and black. The matrix layer 4510 has a plurality of light transmissive regions 4512 corresponding to the light emitting elements 3320-1, 3320-2, and 3320-3, respectively, to define a plurality of pixel regions on the full color display surface. Here, the black matrix layer 4510 is, for example, a transparent cover plate having a black light-shielding region formed on its surface.

綜上所述,本揭露提出了多種發光元件的封裝結構及其製程,可實現低製程溫度,相容於細線化製程,且封裝製程簡單、快速,適於量產。雖然前述多個實施例以兩種或三種顏色的發光二極體為例來進行說明,然實際上,本發明並不限制發光二極體的顏色數量。舉例而言,更可能包括四個顏色或五個顏色的發光二極體,以滿足不同的出光需求。 In summary, the present disclosure proposes a package structure and a process for a plurality of light-emitting elements, which can realize a low process temperature, is compatible with a thin line process, and has a simple and fast packaging process, and is suitable for mass production. Although the foregoing various embodiments have been described by taking two or three colors of light-emitting diodes as an example, the present invention does not limit the number of colors of the light-emitting diodes. For example, it is more likely to include four color or five color LEDs to meet different light-emitting requirements.

雖然本揭露已以實施例揭露如上,然其並非用以限定本 揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露的精神和範圍內,當可作些許的更動與潤飾,故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。 Although the disclosure has been disclosed above by way of example, it is not intended to limit the present. It is to be understood that those skilled in the art will be able to make a few changes and modifications without departing from the spirit and scope of the disclosure, and the scope of the disclosure is defined by the scope of the appended claims. quasi.

100‧‧‧封裝結構 100‧‧‧Package structure

110‧‧‧載板 110‧‧‧ Carrier Board

112‧‧‧承載面 112‧‧‧ bearing surface

114‧‧‧電極接點 114‧‧‧Electrode contacts

120‧‧‧發光元件 120‧‧‧Lighting elements

122‧‧‧發光元件的頂部 122‧‧‧Top of the light-emitting element

124‧‧‧發光元件的底部 124‧‧‧Bottom of the light-emitting element

126‧‧‧第一電極 126‧‧‧first electrode

129‧‧‧發光元件的側面 129‧‧‧Side side of the light-emitting element

130‧‧‧異方性導電膜 130‧‧‧ anisotropic conductive film

132‧‧‧絕緣體 132‧‧‧Insulator

134‧‧‧導電粒子 134‧‧‧ conductive particles

140‧‧‧磊晶基板 140‧‧‧ epitaxial substrate

Claims (76)

一種發光元件的封裝結構,包括:一載板,具有一承載面以及配置於該承載面上的多個電極接點;多個發光元件,呈陣列排列而配置於該承載面上方,每一該些發光元件包括面向該載板的一頂部、相對於該頂部的一底部以及位於該頂部的一第一電極;以及一異方性導電膜(Anisotropic Conductive Film,ACF),配置於該承載面上,且至少覆蓋該些電極接點、每一該些發光元件的該頂部、該第一電極以及每一該些發光元件的部分側面,該異方性導電膜包括一絕緣體以及位於該絕緣體內的多個導電粒子,且每一該些發光元件的該第一電極藉由該些導電粒子分別電性連接至相應的該些電極接點。 A package structure of a light-emitting element, comprising: a carrier plate having a bearing surface and a plurality of electrode contacts disposed on the bearing surface; a plurality of light-emitting elements arranged in an array and disposed above the bearing surface, each of the The light-emitting elements include a top portion facing the carrier, a bottom portion opposite to the top portion, and a first electrode at the top portion; and an anisotropic conductive film (ACF) disposed on the bearing surface And covering at least the electrode contacts, the top portion of each of the light-emitting elements, the first electrode, and a portion of each of the light-emitting elements, the anisotropic conductive film includes an insulator and a body located in the insulator And a plurality of conductive particles, and the first electrodes of each of the light-emitting elements are electrically connected to the corresponding electrode contacts by the conductive particles. 如申請專利範圍第1項所述的發光元件的封裝結構,其中每一該些發光元件的該底部共平面。 The package structure of the light-emitting element according to claim 1, wherein the bottom of each of the light-emitting elements is coplanar. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該異方性導電膜暴露出每一該些發光元件的該底部。 The package structure of the light-emitting element according to claim 1, wherein the anisotropic conductive film exposes the bottom of each of the light-emitting elements. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該異方性導電膜的一第一表面與每一該些發光元件的該底部共平面。 The package structure of the light-emitting element according to claim 1, wherein a first surface of the anisotropic conductive film is coplanar with the bottom of each of the light-emitting elements. 如申請專利範圍第1項所述的發光元件的封裝結構,更包括一基板,配置於該異方性導電膜上,且覆蓋每一該些發光元件的該底部。 The package structure of the light-emitting device of claim 1, further comprising a substrate disposed on the anisotropic conductive film and covering the bottom of each of the light-emitting elements. 如申請專利範圍第1項所述的發光元件的封裝結構,更包括一線路層,配置於該異方性導電膜與該些發光元件上,每一該些發光元件更包括一第二電極位於該底部,且該線路層串接該些發光元件的該些第二電極。 The package structure of the light-emitting device of claim 1, further comprising a circuit layer disposed on the anisotropic conductive film and the light-emitting elements, each of the light-emitting elements further comprising a second electrode The bottom layer, and the circuit layer is connected in series with the second electrodes of the light-emitting elements. 如申請專利範圍第1項所述的發光元件的封裝結構,其中每一該些發光元件更包括一第二電極位於該頂部,且每一該些發光元件的該第一電極以及該第二電極分別藉由該些導電粒子電性連接至相應的該些電極接點。 The package structure of the light-emitting device of claim 1, wherein each of the light-emitting elements further includes a second electrode at the top, and the first electrode and the second electrode of each of the light-emitting elements The conductive particles are electrically connected to the corresponding electrode contacts respectively. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該些發光元件包括在同一磊晶基板上製作的多個發光二極體。 The package structure of the light-emitting element according to claim 1, wherein the light-emitting elements comprise a plurality of light-emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該些發光元件包括多個第一色發光二極體以及多個第二色發光二極體。 The package structure of the light-emitting element according to claim 1, wherein the light-emitting elements comprise a plurality of first color light-emitting diodes and a plurality of second color light-emitting diodes. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該些發光元件包括一第一色條狀發光單元以及一第二色條狀發光單元,該第一色條狀發光單元包括依序連接的多個第一色發光二極體,該第二色條狀發光單元包括依序連接的多個第二色發光二極體。 The package structure of the light-emitting device of claim 1, wherein the light-emitting elements comprise a first color strip-shaped light-emitting unit and a second color strip-shaped light-emitting unit, wherein the first color strip-shaped light-emitting unit comprises And sequentially connecting the plurality of first color light emitting diodes, wherein the second color strip light emitting unit comprises a plurality of second color light emitting diodes connected in sequence. 如申請專利範圍第1項所述的發光元件的封裝結構,其中該載板包括半導體基板、玻璃基板、印刷電路板、或線路基板。 The package structure of the light-emitting element according to claim 1, wherein the carrier board comprises a semiconductor substrate, a glass substrate, a printed circuit board, or a wiring substrate. 一種發光元件的封裝結構,包括:一第一封裝單元,包括:一第一載板,具有一第一承載面以及配置於該第一承載面上的多個第一電極接點;多個第一發光元件,呈陣列排列而配置於該第一承載面上方,每一該些第一發光元件包括面向該第一載板的一第一頂部、相對於該第一頂部的一第一底部以及位於該第一頂部的一第一電極;多個第一導電件,分別電性連接每一該些第一發光元件的該第一電極至相應的該些第一電極接點;以及一第一包封體,配置於該第一承載面上,且至少覆蓋該些第一電極接點、每一該些第一發光元件的該第一頂部、該第一電極以及每一該些第一發光元件的側面,且該第一包封體的一第一表面與每一該些第一發光元件的該第一底部共平面;至少一第二封裝單元,堆疊於該第一封裝單元上,每一該至少一第二封裝單元包括:一第二載板,具有一第二承載面、相對於該第二承載面的一背面以及配置於該第二承載面上的多個第二電極接點; 多個第二發光元件,呈陣列排列而配置於該第二承載面上方,每一該些第二發光元件包括面向該第二載板的一第二頂部、相對於該第二頂部的一第二底部以及位於該第二頂部的一第三電極;多個第二導電件,分別電性連接每一該些第二發光元件的該第三電極至相應的該些第二電極接點;以及一第二包封體,配置於該第二承載面上,且至少覆蓋該些第二電極接點、每一該些第二發光元件的該第二頂部、該第三電極以及每一該些第二發光元件的側面,且該第二包封體的一第一表面與每一該些第二發光元件的該第二底部共平面。 A package structure of a light-emitting component, comprising: a first package unit, comprising: a first carrier plate having a first bearing surface and a plurality of first electrode contacts disposed on the first carrier surface; a light emitting element arranged in an array and disposed above the first bearing surface, each of the first light emitting elements including a first top facing the first carrier, a first bottom opposite the first top, and a first electrode located at the first top portion; a plurality of first conductive members electrically connecting the first electrodes of each of the first light emitting elements to the corresponding first electrode contacts; and a first An envelope body disposed on the first bearing surface and covering at least the first electrode contacts, the first top portion of each of the first light emitting elements, the first electrode, and each of the first light emitting portions a first surface of the first encapsulant is coplanar with the first bottom of each of the first illuminating elements; at least one second encapsulating unit is stacked on the first encapsulating unit, The at least one second package unit comprises: a first The carrier plate having a second bearing surface, a back surface with respect to the second supporting surface and a plurality of second electrodes arranged in the contact of the second bearing surface; a plurality of second light-emitting elements arranged in an array and disposed above the second bearing surface, each of the second light-emitting elements including a second top facing the second carrier, and a second portion opposite to the second top a second bottom portion and a third electrode at the second top portion; a plurality of second conductive members electrically connected to the third electrode of each of the second light emitting elements to the corresponding second electrode contacts; a second encapsulating body disposed on the second carrying surface and covering at least the second electrode contacts, the second top portion of each of the second light emitting elements, the third electrode, and each of the plurality of second light emitting elements a side surface of the second light emitting element, and a first surface of the second envelope body is coplanar with the second bottom of each of the second light emitting elements. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一封裝單元更包括:一第一線路層,配置於該第一載板的該第一承載面上,且該第一線路層電性連接該些第一電極接點。 The package structure of the illuminating device of claim 12, wherein the first package unit further comprises: a first circuit layer disposed on the first bearing surface of the first carrier, and the first The circuit layer is electrically connected to the first electrode contacts. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一封裝單元更包括:一第二線路層,配置於該第一包封體與該些第一發光元件上,每一該些第一發光元件更包括一第二電極位於該第一底部,且該第二線路層串接毎一該些第一發光元件的該第二電極。 The package structure of the illuminating device of claim 12, wherein the first package unit further comprises: a second circuit layer disposed on the first encapsulant and the first illuminating elements, each The first light emitting elements further include a second electrode located at the first bottom, and the second circuit layer is serially connected to the second electrode of the first light emitting elements. 如申請專利範圍第12項所述的發光元件的封裝結構,其中每一該些第一發光元件更包括一第二電極位於該第一頂部 上,且每一該些第一發光元件的該第一電極以及該第二電極分別藉由該些第一導電件電性連接至相應的該些第一電極接點。 The package structure of the light-emitting element of claim 12, wherein each of the first light-emitting elements further comprises a second electrode located at the first top The first electrode and the second electrode of each of the first light-emitting elements are electrically connected to the corresponding first electrode contacts by the first conductive members. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該些第一發光元件包括在同一磊晶基板上製作的多個第一色發光二極體。 The package structure of the light-emitting element according to claim 12, wherein the first light-emitting elements comprise a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該至少一第二封裝單元更包括:一第三線路層,配置於該第二載板的該第二承載面上,且該第三線路層電性連接該些第二電極接點。 The package structure of the illuminating device of claim 12, wherein the at least one second package unit further comprises: a third circuit layer disposed on the second bearing surface of the second carrier, and the The third circuit layer is electrically connected to the second electrode contacts. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該至少一第二封裝單元更包括:一第四線路層,配置於該第二包封體與該些第二發光元件上,每一該些第二發光元件更包括一第四電極位於該第二底部,且該第四線路層串接毎一該些第二發光元件的該第四電極。 The package structure of the light-emitting device of claim 12, wherein the at least one second package unit further comprises: a fourth circuit layer disposed on the second envelope and the second light-emitting elements, Each of the second light-emitting elements further includes a fourth electrode located at the second bottom, and the fourth circuit layer is serially connected to the fourth electrode of the second light-emitting elements. 如申請專利範圍第12項所述的發光元件的封裝結構,其中每一該些第二發光元件更包括一第四電極位於該第二頂部,且每一該些第二發光元件的該第三電極以及該第四電極分別藉由該些第二導電件電性連接至相應的該些第二電極接點。 The package structure of the light-emitting element of claim 12, wherein each of the second light-emitting elements further comprises a fourth electrode at the second top, and the third of each of the second light-emitting elements The electrodes and the fourth electrode are electrically connected to the corresponding second electrode contacts by the second conductive members. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該些第二發光元件包括在同一磊晶基板上製作的多個第二色發光二極體。 The package structure of the light-emitting element according to claim 12, wherein the second light-emitting elements comprise a plurality of second color light-emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該至少一第二封裝單元包括相互堆疊的兩個第二封裝單元,其中一個第二封裝單元的該些第二發光元件包括在同一磊晶基板上製作的多個第二色發光二極體,而另一個第二封裝單元的該些第二發光元件包括在同一磊晶基板上製作的多個第三色發光二極體。 The package structure of the light-emitting element of claim 12, wherein the at least one second package unit comprises two second package units stacked on each other, wherein the second light-emitting elements of one of the second package units are included The plurality of second color light emitting diodes formed on the same epitaxial substrate, and the second light emitting elements of the other second package unit comprise a plurality of third color light emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第12項所述的發光元件的封裝結構,更包括多個導光結構,分別配置於相應的該些第一發光元件以及該些第二發光元件上方,每一該些導光結構的一端連接相應的毎一該些第一發光元件的該第一底部或毎一該些第二發光元件的該第二底部,並且貫穿上層的該至少一第二封裝單元。 The package structure of the light-emitting device of claim 12, further comprising a plurality of light-guiding structures disposed on the respective first light-emitting elements and the second light-emitting elements, each of the light guides One end of the structure is connected to the first bottom of the first first light-emitting elements or the second bottom of the second light-emitting elements, and penetrates the at least one second package unit of the upper layer. 如申請專利範圍第22項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔,暴露出相應的該第一發光元件的該第一底部或該第二發光元件的該第二底部。 The package structure of the light-emitting device of claim 22, wherein each of the light-guiding structures comprises a through hole exposing the corresponding first bottom portion of the first light-emitting element or the second light-emitting element Second bottom. 如申請專利範圍第22項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及填入該通孔的一透光材料,且該透光材料的折射率大於該第二包封體的折射率。 The package structure of the light-emitting device of claim 22, wherein each of the light-guiding structures comprises a through hole and a light transmissive material filled in the through hole, and the refractive index of the light transmissive material is greater than the first The refractive index of the second envelope. 如申請專利範圍第22項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及覆蓋該通孔內壁的一反射材料。 The package structure of the light-emitting element of claim 22, wherein each of the light-guiding structures comprises a through hole and a reflective material covering the inner wall of the through hole. 如申請專利範圍第12項所述的發光元件的封裝結構,更包括至少一黏著層,配置於相鄰的該第一封裝單元與該至少一第二封裝單元之間,或相鄰的兩個該至少一第二封裝單元之間。 The package structure of the light-emitting device of claim 12, further comprising at least one adhesive layer disposed between the adjacent first package unit and the at least one second package unit, or two adjacent Between the at least one second package unit. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一封裝單元更包括:一第一線路層,配置於該第一載板的該第一承載面上,該第一線路層電性連接該些第一電極接點,且該第一包封體暴露出該第一載板的外圍以及部分的該第一線路層,該至少一第二封裝單元更包括:一第三線路層,配置於該第二載板的該第二承載面上,該第三線路層電性連接該些第二電極接點,且該第二包封體暴露出該第二載板的外圍以及部分的該第三線路層,且該封裝結構更包括多條導線,電性連接於該第一線路層與該第三線路層之間,或電性連接於相應的兩個該第三線路層之間。 The package structure of the illuminating device of claim 12, wherein the first package unit further comprises: a first circuit layer disposed on the first bearing surface of the first carrier, the first line The first electrical contact is electrically connected to the first electrode contacts, and the first encapsulant exposes a periphery of the first carrier and a portion of the first circuit layer, and the at least one second package unit further includes: a third a circuit layer disposed on the second carrier surface of the second carrier, the third circuit layer electrically connecting the second electrode contacts, and the second envelope exposing the periphery of the second carrier And a portion of the third circuit layer, and the package structure further includes a plurality of wires electrically connected between the first circuit layer and the third circuit layer, or electrically connected to the corresponding two of the third lines Between the layers. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一封裝單元更包括:一第一線路層,配置於該第一載板的該第一承載面上,該第一線路層電性連接該些第一電極接點,該至少一第二封裝單元更包括:一第三線路層,配置於該第二載板的該第二承載面上,該第三線路層電性連接該些第二電極接點,且該封裝結構更包括多個導通孔,每一該些導通孔貫穿該至 少一第二封裝單元的該第二載板,並且連接於相應的該第三線路層與其下方的該第一發光元件之間,或電性連接於相應的該第三線路層與其下方的該第二發光元件之間。 The package structure of the illuminating device of claim 12, wherein the first package unit further comprises: a first circuit layer disposed on the first bearing surface of the first carrier, the first line The layer is electrically connected to the first electrode contacts, and the at least one second package unit further includes: a third circuit layer disposed on the second bearing surface of the second carrier, the third circuit layer is electrically Connecting the second electrode contacts, and the package structure further includes a plurality of via holes, each of the through holes extending through the Having the second carrier of the second package unit and connected between the corresponding third circuit layer and the first light-emitting element below it, or electrically connected to the corresponding third circuit layer and the lower portion thereof Between the second light-emitting elements. 如申請專利範圍第12項所述的發光元件的封裝結構,更包括一黑矩陣層,配置於該至少一第二封裝單元之上,且該黑矩陣層具有多個透光區,分別對應於該些第一發光元件以及該些第二發光元件。 The package structure of the light-emitting device of claim 12, further comprising a black matrix layer disposed on the at least one second package unit, wherein the black matrix layer has a plurality of light-transmissive regions, respectively corresponding to The first light emitting elements and the second light emitting elements. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該些第一發光元件以及該些第二發光元件在該第一承載面上的垂直投影不相互重疊,且排列為一面陣列。 The package structure of the light-emitting device of claim 12, wherein the vertical projections of the first light-emitting elements and the second light-emitting elements on the first bearing surface do not overlap each other and are arranged in an array. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第二載板的該背面具有多個光學微結構。 The package structure of a light-emitting element according to claim 12, wherein the back surface of the second carrier has a plurality of optical microstructures. 如申請專利範圍第30項所述的發光元件的封裝結構,其中該些光學微結構包括多個微透鏡或多個光調製圖案。 The package structure of a light-emitting element according to claim 30, wherein the optical microstructures comprise a plurality of microlenses or a plurality of light modulation patterns. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一載板包括半導體基板、玻璃基板、印刷電路板、或線路基板。 The package structure of a light-emitting element according to claim 12, wherein the first carrier comprises a semiconductor substrate, a glass substrate, a printed circuit board, or a circuit substrate. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第二載板包括透光基板。 The package structure of the light-emitting element according to claim 12, wherein the second carrier comprises a light-transmitting substrate. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第二載板的厚度小於或等於該第一載板的厚度。 The package structure of the light-emitting element according to claim 12, wherein the thickness of the second carrier is less than or equal to the thickness of the first carrier. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該第一包封體以及該些第一導電件分別為一第一異方性導電膜(Anisotropic Conductive Film,ACF)的一第一絕緣體以及位於該第一絕緣體內的多個第一導電粒子,而該第二包封體以及該些第二導電件分別為一第二異方性導電膜(Anisotropic Conductive Film,ACF)的一第二絕緣體以及位於該第二絕緣體內的多個第二導電粒子。 The package structure of the light-emitting device of claim 12, wherein the first envelope and the first conductive members are respectively a first anisotropic conductive film (ACF) An insulator and a plurality of first conductive particles located in the first insulator, and the second envelope and the second conductive members are respectively a second anisotropic conductive film (ACF) a second insulator and a plurality of second conductive particles located in the second insulator. 如申請專利範圍第12項所述的發光元件的封裝結構,其中該些第一導電件包括多個第一導電凸塊,而該些第二導電件包括多個第二導電凸塊。 The package structure of the light-emitting element of claim 12, wherein the first conductive members comprise a plurality of first conductive bumps, and the second conductive members comprise a plurality of second conductive bumps. 如申請專利範圍第12項所述的發光元件的封裝結構,更包括一散熱片,配置於該第一載板的一背面。 The package structure of the light-emitting device of claim 12, further comprising a heat sink disposed on a back surface of the first carrier. 一種發光元件的封裝結構,包括:一載板,具有一承載面;多個封裝單元,依序堆疊於該承載面上,每一該些封裝單元具有一第一表面以及相對的一第二表面,包括:多個發光元件,呈陣列排列而埋入每一該些封裝單元的該第一表面,每一該些發光元件包括面向該載板的一頂部、相對於該頂部的一底部以及位於該頂部的一第一電極,且每一該些發光元件的該底部與對應埋入的每一該些封裝單元的該第一表面共平面;以及多個導電凸塊,埋入每一該些封裝單元的該第二表 面;以及一內連線結構,位於該些封裝單元內,該內連線結構包括:多個第一線路層,配置於相鄰的兩個該些封裝單元之間或是相鄰的該載板與該封裝單元之間,並且分別藉由該些導電凸塊電性連接至相應的該些發光元件;以及多個導通孔,貫穿相應的該些封裝單元,並且電性連接於相應的該些第一線路層之間。 A package structure of a light-emitting component, comprising: a carrier plate having a bearing surface; a plurality of package units stacked on the carrier surface in sequence, each of the package units having a first surface and an opposite second surface The method includes: a plurality of light emitting elements arranged in an array and buried in the first surface of each of the package units, each of the light emitting elements including a top facing the carrier, a bottom opposite to the top, and a first electrode of the top portion, and the bottom of each of the light emitting elements is coplanar with the first surface of each of the plurality of packaged units; and a plurality of conductive bumps are embedded in each of the plurality of conductive elements The second table of the package unit And an interconnect structure, located in the package unit, the interconnect structure includes: a plurality of first circuit layers disposed between two adjacent package units or adjacent to the load Between the board and the package unit, and electrically connected to the corresponding light-emitting elements by the conductive bumps respectively; and a plurality of via holes, through the corresponding package units, and electrically connected to the corresponding ones Between the first line layers. 如申請專利範圍第39項所述的發光元件的封裝結構,更包括:多個第二線路層,分別配置於每一該些封裝單元的該些第一表面上,每一該些發光元件更包括一第二電極位於該底部,且該第二線路層串接毎一該些發光元件的該第二電極;以及至少一絕緣層,配置於相鄰的兩個該些封裝單元之間,用以隔絕相應的該第二線路層與該內連線結構。 The package structure of the light-emitting device of claim 39, further comprising: a plurality of second circuit layers respectively disposed on the first surfaces of each of the package units, each of the light-emitting elements The second electrode layer is disposed in the bottom of the second electrode layer, and the second electrode layer is connected in series with the second electrode of the light-emitting elements; and at least one insulating layer is disposed between the two adjacent package units. The corresponding second circuit layer and the interconnect structure are isolated. 如申請專利範圍第39項所述的發光元件的封裝結構,其中每一該些發光元件更包括一第二電極位於該頂部,且每一該些發光元件的該第一電極以及該第二電極分別電性連接至相應的該些導電凸塊。 The package structure of the light-emitting device of claim 39, wherein each of the light-emitting elements further comprises a second electrode at the top, and the first electrode and the second electrode of each of the light-emitting elements They are electrically connected to the corresponding conductive bumps respectively. 如申請專利範圍第39項所述的發光元件的封裝結構,其中每一該些封裝單元的該些發光元件包括在同一磊晶基板上製作的多個發光二極體。 The package structure of the light-emitting device of claim 39, wherein the light-emitting elements of each of the package units comprise a plurality of light-emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第39項所述的發光元件的封裝結構,其中每一該些封裝單元的該些發光元件發出的光線顏色不同。 The package structure of the light-emitting element according to claim 39, wherein the light-emitting elements of each of the package units emit different colors of light. 如申請專利範圍第39項所述的發光元件的封裝結構,其中該些封裝單元包括相互堆疊的一第一封裝單元、一第二封裝單元以及一第三封裝單元,其中該第一封裝單元的該些發光元件包括在同一磊晶基板上製作的多個第一色發光二極體,該第二封裝單元的該些發光元件包括在另一磊晶基板上製作的多個第二色發光二極體,該第三封裝單元的該些發光元件包括在又一磊晶基板上製作的多個第三色發光二極體。 The package structure of the light-emitting device of claim 39, wherein the package unit comprises a first package unit, a second package unit and a third package unit stacked on each other, wherein the first package unit The light-emitting elements include a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate, and the light-emitting elements of the second package unit include a plurality of second color light-emitting diodes fabricated on another epitaxial substrate In the polar body, the light emitting elements of the third package unit comprise a plurality of third color light emitting diodes fabricated on a further epitaxial substrate. 如申請專利範圍第39項所述的發光元件的封裝結構,更包括多個導光結構,分別配置於相應的該些發光元件上方,每一該些導光結構的一端連接至每一該些發光元件的該底部,並且貫穿至該些封裝單元曝露出的表面。 The package structure of the light-emitting device of claim 39, further comprising a plurality of light-guiding structures respectively disposed on the corresponding light-emitting elements, one end of each of the light-guiding structures being connected to each of the light-emitting elements The bottom of the light emitting element and penetrates to the exposed surface of the package unit. 如申請專利範圍第45項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔,分別暴露出每一該些發光元件的該底部。 The package structure of the light-emitting element of claim 45, wherein each of the light-guiding structures comprises a through hole respectively exposing the bottom of each of the light-emitting elements. 如申請專利範圍第45項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及填入該通孔的一透光材料,且該透光材料的折射率大於該封裝結構的折射率。 The package structure of the light-emitting device of claim 45, wherein each of the light-guiding structures comprises a through hole and a light transmissive material filled in the through hole, and the light transmissive material has a refractive index greater than the package. The refractive index of the structure. 如申請專利範圍第45項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及覆蓋該通孔內壁的一反射材料。 The package structure of the light-emitting element of claim 45, wherein each of the light-guiding structures comprises a through hole and a reflective material covering the inner wall of the through hole. 如申請專利範圍第45項所述的發光元件的封裝結構,更包括一披覆層,配置於該些封裝單元之最上層表面,且每一該些導光結構更貫穿該批覆層。 The package structure of the light-emitting device of claim 45, further comprising a coating layer disposed on an uppermost surface of the package unit, and each of the light guiding structures further penetrates the batch of layers. 如申請專利範圍第39項所述的發光元件的封裝結構,更包括一黑矩陣層,配置於該些封裝單元之上,且該黑矩陣層具有多個透光區,分別對應於該些發光元件。 The package structure of the light-emitting device of claim 39, further comprising a black matrix layer disposed on the package units, wherein the black matrix layer has a plurality of light-transmissive regions respectively corresponding to the light-emitting regions element. 如申請專利範圍第39項所述的發光元件的封裝結構,其中該些發光元件在該承載面上的垂直投影不相互重疊,且排列為一面陣列。 The package structure of the light-emitting element according to claim 39, wherein the vertical projections of the light-emitting elements on the bearing surface do not overlap each other and are arranged in an array on one side. 如申請專利範圍第39項所述的發光元件的封裝結構,其中該載板包括半導體基板、玻璃基板、印刷電路板、或線路基板。 The package structure of a light-emitting element according to claim 39, wherein the carrier board comprises a semiconductor substrate, a glass substrate, a printed circuit board, or a wiring substrate. 如申請專利範圍第39項所述的發光元件的封裝結構,更包括一散熱片,配置於該載板的一背面。 The package structure of the light-emitting element according to claim 39, further comprising a heat sink disposed on a back surface of the carrier. 如申請專利範圍第39項所述的發光元件的封裝結構,更包括一基板,覆蓋該些封裝單元曝露出的表面。 The package structure of the light-emitting element according to claim 39, further comprising a substrate covering the exposed surface of the package unit. 一種發光元件的封裝結構,包括:多個封裝單元,相互堆疊,且每一該些封裝單元具有一第一表面以及相對的一第二表面,包括:多個發光元件,呈陣列排列而埋入每一該些封裝單元的該第一表面,每一該些發光元件包括一頂部、相對於該頂部的一底部以及位於該頂部的一第一電極,且每一該些 發光元件的該底部與對應埋入的每一該些封裝單元的該第一表面共平面;以及一線路結構,配置於每一該些封裝單元內或每一該些封裝單元的該第二表面上,並且電性連接至相應的該些第一電極;多個第一導電凸塊,配置於相鄰的兩個該些封裝單元之間,並且電性連接相鄰的兩個該些封裝單元的該些線路結構;以及一黏著層,配置於相鄰的兩個該些封裝單元之間,並且包覆該些第一導電凸塊。 A package structure of a light-emitting element, comprising: a plurality of package units stacked on each other, and each of the package units has a first surface and an opposite second surface, comprising: a plurality of light-emitting elements arranged in an array and embedded Each of the first surface of each of the package units includes a top portion, a bottom portion opposite to the top portion, and a first electrode at the top portion, and each of the plurality of light emitting elements The bottom of the light emitting element is coplanar with the first surface of each of the plurality of packaged units; and a line structure disposed in each of the plurality of package units or the second surface of each of the package units And electrically connected to the corresponding first electrodes; the plurality of first conductive bumps are disposed between the two adjacent package units, and electrically connected to the two adjacent package units The circuit structure; and an adhesive layer disposed between the two adjacent package units and covering the first conductive bumps. 如申請專利範圍第55項所述的發光元件的封裝結構,更包括:一載板,承載相互堆疊的該些封裝單元,且每一該些封裝單元的該第二表面朝向該載板,其中該些封裝單元最下層的該線路結構電性連接至該載板。 The package structure of the light-emitting device of claim 55, further comprising: a carrier plate carrying the package units stacked on each other, and the second surface of each of the package units faces the carrier, wherein The line structure of the lowermost layer of the package units is electrically connected to the carrier board. 如申請專利範圍第56項所述的發光元件的封裝結構,更包括:多個第二導電凸塊,配置於該載板與該些封裝單元之間,用以將該些封裝單元最下層的該線路結構電性連接至該載板。 The package structure of the light-emitting device of claim 56, further comprising: a plurality of second conductive bumps disposed between the carrier and the package units for lowering the package units The line structure is electrically connected to the carrier. 如申請專利範圍第55項所述的發光元件的封裝結構,更包括:一載板,承載相互堆疊的該些封裝單元,且每一該些封裝單元的該第一表面朝向該載板,其中該些封裝單元最下層的該線路 結構電性連接至該載板。 The package structure of the light-emitting device of claim 55, further comprising: a carrier plate carrying the package units stacked on each other, and the first surface of each of the package units faces the carrier, wherein The lowermost layer of the package unit The structure is electrically connected to the carrier. 如申請專利範圍第58項所述的發光元件的封裝結構,更包括:多個第二導電凸塊,配置於該載板與該些封裝單元之間,用以將該些封裝單元最下層的該線路結構電性連接至該載板。 The package structure of the light-emitting device of claim 58, further comprising: a plurality of second conductive bumps disposed between the carrier and the package units for lowering the package units The line structure is electrically connected to the carrier. 如申請專利範圍第55項所述的發光元件的封裝結構,更包括:一基板,承載相互堆疊的該些封裝單元,且該些封裝單元最下層的該第一表面貼合該基板。 The package structure of the light-emitting device of claim 55, further comprising: a substrate carrying the package units stacked on each other, and the first surface of the lowermost layer of the package units is attached to the substrate. 如申請專利範圍第55項所述的發光元件的封裝結構,其中每一該些發光元件更包括一第二電極位於該底部,並且電性連接至相應的該線路結構。 The package structure of the light-emitting element of claim 55, wherein each of the light-emitting elements further comprises a second electrode at the bottom and electrically connected to the corresponding line structure. 如申請專利範圍第55項所述的發光元件的封裝結構,其中每一該些發光元件更包括一第二電極位於該頂部,並且電性連接至相應的該線路結構。 The package structure of the light-emitting element of claim 55, wherein each of the light-emitting elements further comprises a second electrode located at the top portion and electrically connected to the corresponding line structure. 如申請專利範圍第55項所述的發光元件的封裝結構,其中每一該些封裝單元的該些發光元件包括在同一磊晶基板上製作的多個發光二極體。 The package structure of the light-emitting device of claim 55, wherein the light-emitting elements of each of the package units comprise a plurality of light-emitting diodes fabricated on the same epitaxial substrate. 如申請專利範圍第55項所述的發光元件的封裝結構,其中每一該些封裝單元的該些發光元件發出的光線顏色不同。 The package structure of the light-emitting element of claim 55, wherein the light-emitting elements of each of the package units emit different colors of light. 如申請專利範圍第55項所述的發光元件的封裝結構,其中該些封裝單元包括相互堆疊的一第一封裝單元、一第二封裝 單元以及一第三封裝單元,其中該第一封裝單元的該些發光元件包括在同一磊晶基板上製作的多個第一色發光二極體,該第二封裝單元的該些發光元件包括在另一磊晶基板上製作的多個第二色發光二極體,該第三封裝單元的該些發光元件包括在又一磊晶基板上製作的多個第三色發光二極體。 The package structure of the light-emitting device of claim 55, wherein the package units comprise a first package unit and a second package stacked on each other And the third package unit, wherein the light-emitting elements of the first package unit comprise a plurality of first color light-emitting diodes fabricated on the same epitaxial substrate, and the light-emitting elements of the second package unit are included And a plurality of second color light emitting diodes formed on the other epitaxial substrate, wherein the light emitting elements of the third package unit comprise a plurality of third color light emitting diodes fabricated on the further epitaxial substrate. 如申請專利範圍第55項所述的發光元件的封裝結構,更包括多個導光結構,每一該些發光元件具有一出光方向,且每一該些導光結構的一端連接至每一該些發光元件,並且沿該出光方向貫穿至該些封裝單元的表面。 The package structure of the light-emitting device of claim 55, further comprising a plurality of light-guiding structures, each of the light-emitting elements having a light-emitting direction, and one end of each of the light-guiding structures is connected to each of the light-emitting elements The light-emitting elements penetrate through the surface of the package units in the light-emitting direction. 如申請專利範圍第66項所述的發光元件的封裝結構,其中每一該些發光元件由該頂部出光,且每一該些導光結構的一端連接至每一該些發光元件的該頂部。 The package structure of the light-emitting element of claim 66, wherein each of the light-emitting elements emits light from the top, and one end of each of the light-guiding structures is connected to the top of each of the light-emitting elements. 如申請專利範圍第66項所述的發光元件的封裝結構,其中每一該些發光元件由該底部出光,且每一該些導光結構的一端連接至每一該些發光元件的該底部。 The package structure of the light-emitting element of claim 66, wherein each of the light-emitting elements emits light from the bottom, and one end of each of the light-guiding structures is connected to the bottom of each of the light-emitting elements. 如申請專利範圍第66項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔,暴露出每一該些發光元件。 The package structure of the light-emitting element of claim 66, wherein each of the light-guiding structures comprises a through hole exposing each of the light-emitting elements. 如申請專利範圍第66項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及填入該通孔的一透光材料,且該透光材料的折射率大於該封裝結構的折射率。 The package structure of the light-emitting device of claim 66, wherein each of the light-guiding structures comprises a through hole and a light transmissive material filled in the through hole, and the light transmissive material has a refractive index greater than the package The refractive index of the structure. 如申請專利範圍第66項所述的發光元件的封裝結構,其中每一該些導光結構包括一通孔以及覆蓋該通孔內壁的一反射材料。 The package structure of the light-emitting element of claim 66, wherein each of the light-guiding structures comprises a through hole and a reflective material covering the inner wall of the through hole. 如申請專利範圍第66項所述的發光元件的封裝結構,更包括一披覆層,配置於該些封裝單元之最上層表面,且每一該些導光結構更貫穿該披覆層。 The package structure of the light-emitting device of claim 66, further comprising a coating layer disposed on an uppermost surface of the package unit, and each of the light guiding structures further penetrates the coating layer. 如申請專利範圍第55項所述的發光元件的封裝結構,更包括一黑矩陣層,配置於該些封裝單元之上,且該黑矩陣層具有多個透光區,分別對應於該些發光元件。 The package structure of the light-emitting device of claim 55, further comprising a black matrix layer disposed on the package units, wherein the black matrix layer has a plurality of light-transmissive regions respectively corresponding to the light-emitting regions element. 如申請專利範圍第55項所述的發光元件的封裝結構,其中該些發光元件在該承載面上的垂直投影不相互重疊,且排列為一面陣列。 The package structure of the light-emitting element according to claim 55, wherein the vertical projections of the light-emitting elements on the bearing surface do not overlap each other and are arranged in an array on one side. 如申請專利範圍第55項所述的發光元件的封裝結構,其中該載板包括半導體基板、玻璃基板或線路基板。 The package structure of a light-emitting element according to claim 55, wherein the carrier board comprises a semiconductor substrate, a glass substrate or a wiring substrate. 如申請專利範圍第55項所述的發光元件的封裝結構,其中每一該些發光元件更包括一絕緣層位於該底部。 The package structure of the light-emitting element of claim 55, wherein each of the light-emitting elements further comprises an insulating layer at the bottom.
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