CN110767582B - Transfer method of Micro-LED chip - Google Patents

Transfer method of Micro-LED chip Download PDF

Info

Publication number
CN110767582B
CN110767582B CN201911077056.6A CN201911077056A CN110767582B CN 110767582 B CN110767582 B CN 110767582B CN 201911077056 A CN201911077056 A CN 201911077056A CN 110767582 B CN110767582 B CN 110767582B
Authority
CN
China
Prior art keywords
micro
led chip
solution
substrate
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911077056.6A
Other languages
Chinese (zh)
Other versions
CN110767582A (en
Inventor
陈新
杨冠南
崔成强
刘强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN201911077056.6A priority Critical patent/CN110767582B/en
Publication of CN110767582A publication Critical patent/CN110767582A/en
Application granted granted Critical
Publication of CN110767582B publication Critical patent/CN110767582B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

A transfer method of Micro-LED chips comprises the following steps: (1) carrying out surface charge treatment on the chip; (2) an electrode array is preset on the transfer substrate; immersing the chip in a first solution; immersing the transfer substrate and the electrode into the first solution, wherein one of the transfer substrate and the electrode is connected with the positive electrode of a power supply, and the other one of the transfer substrate and the electrode is connected with the negative electrode of the power supply; transferring the substrate and the chip to opposite charges; (3) electrifying a power supply; the electrode array on the transfer substrate is adsorbed with chips distributed in an array; (4) inversely installing the transfer substrate and the bearing substrate to align the chip on the transfer substrate with the bonding pad on the bearing substrate; (5) separating the chip from the surface of the transfer substrate and transferring the chip to a bonding pad of a bearing substrate; (6) and repeating the steps to sequentially transfer the chips with various shapes to the same bearing substrate. The invention realizes the massive transfer of the three primary colors Micro-LED chip, and has simple operation, thereby improving the production efficiency and reducing the production cost.

Description

Transfer method of Micro-LED chip
Technical Field
The invention relates to the technical field of Micro-LEDs, in particular to a transfer method of a Micro-LED chip.
Background
Micro-LED technology, namely LED Micro-scaling and matrixing technology, refers to a high-density Micro-sized LED array integrated on a chip, for example, each pixel of an LED display screen can be addressed and independently driven to be lightened, and can be regarded as a Micro-scale version of an outdoor LED display screen, and the distance between the pixels is reduced from millimeter level to micron level. The micro LED display is a miniature display screen, that is, a reduced version of the LED display screen, in which the bottom layer is made into an LED display driving circuit by a normal CMOS integrated circuit manufacturing process, and then an MOCVD machine is used to manufacture an LED array on the integrated circuit. However, in the prior art, the mass transfer method has the problems of complex process and operation and difficulty in controlling the precision, and cannot realize accurate and error-free mass production.
Disclosure of Invention
The invention aims to provide a Micro-LED chip transfer method, which transfers charged Micro-LED chips onto a transfer substrate.
In order to achieve the purpose, the invention adopts the following technical scheme:
a transfer method of Micro-LED chips comprises the following steps:
(1) carrying out surface charge treatment on the Micro-LED chip;
(2) the electrode array in a required arrangement mode is preset on the transfer substrate; immersing the Micro-LED chip treated in the step (1) in a first solution; immersing the transfer substrate and the electrode into the first solution, wherein one of the transfer substrate and the electrode is connected with the positive electrode of a power supply, and the other one of the transfer substrate and the electrode is connected with the negative electrode of the power supply; the transfer substrate and the Micro-LED chip form opposite charges;
(3) the power supply is electrified; Micro-LED chips distributed in an array are adsorbed on the electrode array on the transfer substrate;
(4) inversely installing the transfer substrate and the bearing substrate to align the Micro-LED chip on the transfer substrate with the bonding pad on the bearing substrate;
(5) separating the Micro-LED chip from the surface of the transfer substrate and transferring the Micro-LED chip to a bonding pad of a bearing substrate;
(6) and (5) repeating the steps (2) to (5), and sequentially transferring the Micro-LED chips with various shapes to the same bearing substrate.
More specifically, in the step (2), at least 2 electrode arrays are arranged on the transfer substrate;
each electrode array is provided with an adsorption station, and the adsorption stations on different electrode arrays are different in shape;
and the Micro-LED chips with the same shape are adsorbed on the adsorption stations with the corresponding shapes.
To be further described, in the step (2), 3 kinds of electrode arrays are arranged on the transfer substrate; the plurality of Micro-LED chips are in one color of red, blue and green, and the Micro-LED chips in the same color are in the same shape;
and (6) obtaining the bearing substrate of the three primary colors Micro-LED chip.
More specifically, in the step (2), the second solution is further layered on the upper surface of the first solution; the second solution and the first solution are not mutually infiltrated and have a density smaller than that of the first solution; after the Micro-LED chip enters the first solution through the second solution, the outer wall of the Micro-LED chip is provided with a vacuole formed by the second solution.
In step (2), the transfer substrate is disposed in the first solution in a vertical state or a horizontal state, and the electrode is correspondingly parallel to the transfer substrate.
More specifically, step (3) is performed by introducing a gas under the first solution.
More specifically, the first solution is treated by ultrasonication in the container in which the first solution is located after passing a gas under the first solution in step (3).
More specifically, the step (1) includes the steps of:
(1-1) coating a surface treatment layer on the surface of the Micro-LED chip, which is away from the electrode side;
(1-2) soaking the surface treatment layer in a surface treatment solution, wherein the surface treatment solution contains polar organic matters.
Further, in the step (1-1), the surface treatment layer is obtained by coating with an epoxy resin.
In the step (1-2), if the Micro-LED chip is positively charged, the polar organic substance is one of poly (dimethyl diallyl ammonium chloride), poly (allyl amine hydrochloride) and aminopyrene;
if the Micro-LED chip is charged with negative electricity, the polar organic matter is selected from one of poly (acrylamide-dimethyl propane) sulfonic acid, PAZO, sodium polystyrene sulfonate and polyacrylic acid.
The invention has the beneficial effects that:
the invention adopts repeated flip-chip or designs the Micro-LED chip and the transfer substrate, can realize the transfer and self-assembly transfer of the three primary colors Micro-LED chip, the transfer of other types of Micro-size chips or the separation transfer of problem chips, realizes the massive transfer of the three primary colors Micro-LED chip, and has simple operation, thereby improving the production efficiency and reducing the production cost.
Drawings
FIG. 1 is a schematic view of a Micro-LED chip in a first solution adsorption path;
FIG. 2 is a diagram of the adsorption stations for three colors on a transfer substrate;
FIG. 3 is a schematic diagram of a step of transferring a transfer substrate of the same color to a carrier substrate in a single time, which is performed 3 times;
FIG. 4 is a schematic diagram of a step of transferring a transfer substrate of multiple colors to a carrier substrate at a time;
FIG. 5 is a schematic illustration of a Micro-LED chip surface coated with a surface treatment layer;
FIG. 6 is a schematic view of a surface treatment layer being immersed in a surface treatment solution;
fig. 7 is a schematic view of a state in which the transfer substrate is vertically disposed;
FIG. 8 is a schematic view of the state of the embodiment in which the transfer substrate is horizontally disposed;
wherein:
the Micro-LED chip comprises a Micro-LED chip 1, a chip electrode 2, a surface treatment layer 3, a polar organic matter 4, a surface treatment solution 5, a first solution 6, an electrode 7, a transfer substrate 8, a power supply 9, a bearing substrate 10 and a three-primary-color Micro-LED chip 11; an electrode array 81, an adsorption station 811; second solution 61, vacuole 611.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
A transfer method of Micro-LED chips comprises the following steps:
(1) carrying out surface charge treatment on the Micro-LED chip; the step is used for enabling the surface of the Micro-LED chip to be positively charged or negatively charged;
(2) the electrode array in a required arrangement mode is preset on the transfer substrate; immersing the Micro-LED chip treated in the step (1) in a first solution; immersing the transfer substrate and the electrode into the first solution, wherein one of the transfer substrate and the electrode is connected with the positive electrode of a power supply, and the other one of the transfer substrate and the electrode is connected with the negative electrode of the power supply; the transfer substrate and the Micro-LED chip form opposite charges;
as shown in fig. 1, an electrode array capable of passing voltage is preset on a transfer substrate, a work site on the electrode array can be a groove or a protruding point, and the like, and after the transfer substrate passes through the electrode array, the work site is charged oppositely to the Micro-LED chip; the transfer substrate, the electrode, the first solution and the power supply form a loop through the conducting wire, and under the electrified condition, the electrode and the transfer substrate form an electric field, and the transfer substrate and the Micro-LED chip are adsorbed on the transfer substrate.
An inert conductor such as graphite is selected as the other electrode opposite to the transfer substrate.
(3) The power supply is electrified; Micro-LED chips distributed in an array are adsorbed on the electrode array on the transfer substrate; the Micro-LED chip moves towards the direction of the array in a directional mode under the action of an electric field;
(4) inversely installing the transfer substrate and the bearing substrate to align the Micro-LED chip on the transfer substrate with the bonding pad on the bearing substrate;
(5) separating the Micro-LED chip from the surface of the transfer substrate and transferring the Micro-LED chip to a bonding pad of a bearing substrate;
(6) and (5) repeating the steps (2) to (5), and sequentially transferring the Micro-LED chips with various shapes to the same bearing substrate.
The invention adopts repeated flip-chip or designs the Micro-LED chip and the transfer substrate, can realize the transfer and self-assembly transfer of the three primary colors Micro-LED chip, the transfer of other types of Micro-size chips or the separation transfer of problem chips, realizes the massive transfer of the three primary colors Micro-LED chip, and has simple operation, thereby improving the production efficiency and reducing the production cost.
More specifically, in the step (2), at least 2 electrode arrays are arranged on the transfer substrate;
each electrode array is provided with an adsorption station, and the adsorption stations on different electrode arrays are different in shape;
and the Micro-LED chips with the same shape are adsorbed on the adsorption stations with the corresponding shapes.
To explain further, as shown in fig. 2, a plurality of electrode arrays, such as the electrode array 81 in fig. 2, are designed, which are marked as triangular electrode arrays for adsorbing the triangular Micro-LED chips; the electrode arrays are different from one another by the adsorption station, so that the rapid and accurate positioning adsorption effect is achieved, and the shapes of all display colors can be unified; according to the invention, by limiting the shape of each Micro-LED chip, if the adsorption station on one electrode array is in a square groove, the blue type Micro-LED chip is in a square shape, the Micro-LED chip is adsorbed on the adsorption station with the square groove under the action of an electric field, and if the Micro-LED chip is in a round shape and the red type Micro-LED chip cannot pass through the adsorption station in the square shape.
Preferably, the transfer substrate is provided with an electrode array capable of being electrified with voltage in advance, and the arrangement mode is required by mass transfer of the Micro-LEDs. The scheme can be realized by adding an insulating layer with a corresponding grid on the conducting layer or by etching the circuit.
To be further described, in the step (2), 3 kinds of electrode arrays are arranged on the transfer substrate; the plurality of Micro-LED chips are in one color of red, blue and green, and the Micro-LED chips in the same color are in the same shape;
and (6) obtaining the bearing substrate of the three primary colors Micro-LED chip.
Further, as shown in fig. 2, by differentiating and designing the shapes of the three-color Micro-LEDs and designing electrode arrays with corresponding shapes on the transfer substrate, self-assembly of multiple Micro-LEDs can be realized, thereby realizing simultaneous transfer of multiple Micro-LEDs at a time. If the red type Micro-LED chip is set to be round, the blue type Micro-LED chip is set to be rectangular, and the green type Micro-LED chip is set to be triangular; the transfer substrate is provided with 3 electrode arrays, the 3 electrode arrays are used for adsorbing the Micro-LED chip, different electrode arrays are provided with adsorption stations with different shapes, for example, a red type adsorption station is designed into a circular groove, a blue type adsorption station is designed into a rectangular groove, and a green type adsorption station is designed into a triangular groove; at the moment, the three types of Micro-LED chips can be automatically, accurately and quickly adsorbed to the electrode arrays at the corresponding positions at one time (as shown in figure 4) or multiple times (as shown in figure 3) only by electrifying the power supply, so that the transfer of various chip arrangement combinations is realized.
Further, red, blue and green type Micro-LED chips are disposed adjacent to the transfer substrate.
The red, blue and green type Micro-LED chips are adjacently arranged on the transfer substrate, namely the adsorption station with any color, and the adsorption stations with the other two colors are adjacently designed, so that the transfer normalization is ensured, and the reasonable, standard and uniform layout of the Micro-LED chips on the bearing substrate is realized.
As shown in fig. 2, the red, blue and green type Micro-LED chips are mounted on 3 adsorption stations 811, and the three are adjacent to each other, so that the overall layout of the transfer substrate 8 is more standard.
More specifically, in the step (2), the second solution is further layered on the upper surface of the first solution; the second solution and the first solution are not mutually infiltrated and have a density smaller than that of the first solution; after the Micro-LED chip enters the first solution through the second solution, the outer wall of the Micro-LED chip is provided with a vacuole formed by the second solution.
Furthermore, the second solution can be selected from oil-soluble organic solvents, which are not conductive, and are not soluble with the first solution, and are layered with the first solution to be positioned on the upper surface of the first solution; therefore, when the Micro-LED chip enters the first solution, the Micro-LED chip needs to pass through the second solution, and after the Micro-LED chip passes through the second solution, the outer wall of the Micro-LED chip can form a vacuole, so that certain buoyancy can be provided for the Micro-LED chip, the gravity of the Micro-LED chip is offset, the transfer efficiency is improved, the charge loss can be avoided, and the charge quantity of the chip is favorably maintained.
In step (2), the transfer substrate is disposed in the first solution in a vertical state or a horizontal state, and the electrode is correspondingly parallel to the transfer substrate.
The Micro-LED chip transversely moves when the transfer substrate is in a vertical state; and when the transfer substrate is in a horizontal state, the Micro-LED chip vertically moves.
More specifically, step (3) is performed by introducing a gas under the first solution.
Further, the introduction of gas through the bubble introducing means 62 under the first solution may occur before or after the energization; the introduced gas can rise upwards and push the vacuole of the Micro-LED chip to float upwards, so that the Micro-LED chip is in a floating state and can be directly adsorbed to the electrode array on the transfer substrate under the action of an electric field after being electrified; solves the problem that the chip is excessively heavy at the bottom of the first solution in the prior art.
More specifically, the first solution is treated by ultrasonication in the container in which the first solution is located after passing a gas under the first solution in step (3).
Furthermore, the ultrasonic treatment can effectively prevent the introduced gas from being agglomerated together to form large bubbles which are unstable and have the possibility of charge loss or defoaming; and tiny bubbles can be generated after ultrasonic treatment, and the structure of the tiny bubbles is more stable.
In a further description, in the step (1), the first solution is selected from an alcohol organic solvent.
The alcohol organic solvent has small or non-conductive conductivity and small corrosiveness, has little influence on the Micro-LED chip, for example, ethanol has high volatility, and cannot be deposited on the surface of the chip after being used as the first solution.
In step (4), the Micro-LED chip is detached from the surface of the transfer substrate by heating and pressurizing or laser heating, and is transferred to the pad of the carrier substrate.
In a further aspect, the electrode array is made of a conductive polymer material.
More specifically, the conductive polymer material includes, but is not limited to, conductive plastic, conductive rubber, or conductive fiber; it is electrically conductive; in addition, the conductive adhesive is preferably used as an electrode array material in the scheme, and the conductive adhesive has low elastic modulus and high elasticity, so that the chip is not easy to fall off after being adsorbed.
More specifically, the step (1) includes the steps of:
(1-1) coating a surface treatment layer on the surface of the Micro-LED chip, which is away from the electrode side;
preferably, the GaN layer and the sapphire layer of the Micro-LED are separated by a laser lift-off method to reduce the weight of the chip, and then the surface treatment is directly performed on the GaN layer.
(1-2) soaking the surface treatment layer in a surface treatment solution, wherein the surface treatment solution contains polar organic matters.
Further, as shown in fig. 5 and 6, after the surface treatment layer is coated on the surface of the Micro-LED chip, the surface treatment layer can easily receive polar materials, and after the Micro-LED chip is soaked in the surface treatment solution, a large amount of polar charges can be formed on the surface of the Micro-LED chip, so that the Micro-LED chip is charged.
Further, in the step (1-1), the surface treatment layer is obtained by coating with an epoxy resin.
The epoxy resin is used as a surface treatment layer, and the surface of the epoxy resin has a large number of hydroxyl groups, so that the degree of charge can be improved; the Micro-LED chip can be protected from being corroded or deposited by the solution, and the effect of electric charge can be achieved; meanwhile, the light transmittance of the surface treatment layer is more than 80%, and the thickness of the surface treatment layer is 1-1000 μm, so that the surface treatment layer can keep a transparent state, and the effect of the Micro-LED chip is not influenced.
In the step (1-2), if the Micro-LED chip is positively charged, the polar organic substance is one of poly (dimethyl diallyl ammonium chloride), poly (allyl amine hydrochloride) and aminopyrene;
if the Micro-LED chip is charged with negative electricity, the polar organic matter is selected from one of poly (acrylamide-dimethyl propane) sulfonic acid, PAZO, sodium polystyrene sulfonate and polyacrylic acid.
Further, after the organic matter with the corresponding positive polarity is coated on the Micro-LED chip, the Micro-LED chip can absorb the corresponding charges on the surface of the surface treatment layer, so that the charges are realized.
The first embodiment is as follows:
a layer of epoxy resin adhesive is coated on a Micro-LED chip and then soaked in an Aminopyrene (AP) water solution to charge the surface of the chip. And (3) taking the transfer substrate on which the conductive adhesive with the mesh grid insulating layer to be distributed is distributed as a cathode and the graphite plate as an anode, and transferring the graphite plate by the Micro-LED chips after electrification to obtain the transfer substrate adhered with a large number of monochromatic Micro-LED chips.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate, thus finishing the transfer of the monochromatic Micro-LED chip.
Example two:
a layer of epoxy resin adhesive is coated on a Micro-LED chip and then soaked in an Aminopyrene (AP) water solution to charge the surface of the chip. And (3) taking the transfer substrate on which the conductive adhesive with the mesh grid insulating layer to be distributed is distributed as a cathode and the graphite plate as an anode, and transferring the graphite plate by the Micro-LED chips after electrification to obtain the transfer substrate adhered with a large number of monochromatic Micro-LED chips.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate, thus finishing the transfer of the monochromatic Micro-LED chip.
And repeatedly preparing the transfer substrate of the other two color chips, and transferring the transfer substrate onto a bearing substrate bonding pad with the chips by utilizing hot-pressing separation to finish the placement of the three primary colors Micro-LED chips of the same light-emitting unit.
Example three:
the three primary colors Micro-LED chip is designed to have different shapes, such as an oval shape, a square shape and a triangular shape. And a mesh grid array insulating layer having the same shape is laid on the transfer substrate of the conductive adhesive.
A layer of epoxy resin adhesive is coated on a three-primary-color Micro-LED chip, and then the three-primary-color Micro-LED chip is soaked in an Aminopyrene (AP) water solution together to charge the surface of the chip. The transfer substrate with the conductive adhesive of the grid insulating layer to be distributed is used as a cathode, the graphite plate is used as an anode, and the three-primary-color Micro-LED chip is directionally moved to the transfer substrate in an electrifying and ultrasonic mode and is self-assembled to a corresponding position. Obtaining the transfer substrate adhered with a large number of three primary color Micro-LED chip arrays.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate, thus finishing the transfer of the three primary colors Micro-LED chip.
Example four:
a layer of epoxy resin adhesive is coated on other types of chips with micro sizes, and then the chips are soaked in an Aminopyrene (AP) water solution to charge the surfaces of the chips. The transfer substrate with the conductive adhesive distributed with the grid insulating layer to be distributed is used as a cathode, the graphite plate is used as an anode, and the transfer substrate with a large number of chips is obtained by transferring the Micro-LED chips after electrification.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate to finish the transfer of the chip.
By repeating the same process, various micro-sized chips can be sequentially transferred to the same substrate in a required arrangement manner.
Example five:
a layer of epoxy resin adhesive is coated on other types of chips with micro sizes, and then the chips are soaked in an Aminopyrene (AP) water solution to charge the surfaces of the chips. Using a transfer substrate distributed with conductive adhesive of a grid insulating layer to be arranged as a cathode, using a graphite plate as an anode, and horizontally arranging the cathode and the anode; and arranging a layer of second solution on the upper surface of the first solution, placing the Micro-LED chip in the first solution through the second solution, and transferring the Micro-LED chip after electrifying to obtain the transfer substrate adhered with a large number of chips.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate to finish the transfer of the chip.
By repeating the same process, various micro-sized chips can be sequentially transferred to the same substrate in a required arrangement manner.
Example six:
a layer of epoxy resin adhesive is coated on other types of chips with micro sizes, and then the chips are soaked in an Aminopyrene (AP) water solution to charge the surfaces of the chips. Using a transfer substrate distributed with conductive adhesive of a grid insulating layer to be arranged as a cathode, using a graphite plate as an anode, and horizontally arranging the cathode and the anode; and arranging a layer of second solution on the upper surface of the first solution, placing the Micro-LED chip in the first solution through the second solution, starting a bubble introducing device to foam from the lower part of the first solution, and transferring the Micro-LED chip after electrification to obtain the transfer substrate adhered with a large number of chips.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate to finish the transfer of the chip.
By repeating the same process, various micro-sized chips can be sequentially transferred to the same substrate in a required arrangement manner.
Example seven:
a layer of epoxy resin adhesive is coated on other types of chips with micro sizes, and then the chips are soaked in an Aminopyrene (AP) water solution to charge the surfaces of the chips. A transfer substrate on which conductive adhesive of a grid insulating layer to be distributed is used as a cathode, a graphite plate is used as an anode, and the cathode and the anode are vertically arranged; and arranging a layer of second solution on the upper surface of the first solution, placing the Micro-LED chip in the first solution through the second solution, and transferring the Micro-LED chip after electrifying to obtain the transfer substrate adhered with a large number of chips.
And taking a transfer substrate, aligning the chip on the substrate with the bonding pad on the bearing substrate, heating and pressurizing to separate the chip from the surface of the conductive adhesive, and transferring the chip onto the bonding pad of the bearing substrate to finish the transfer of the chip.
By repeating the same process, various micro-sized chips can be sequentially transferred to the same substrate in a required arrangement manner.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.

Claims (9)

1. A transfer method of Micro-LED chips is characterized by comprising the following steps:
(1) carrying out surface charge treatment on the Micro-LED chip;
(2) the electrode array in a required arrangement mode is preset on the transfer substrate; immersing the Micro-LED chip treated in the step (1) in a first solution; immersing the transfer substrate and the electrode into the first solution, wherein one of the transfer substrate and the electrode is connected with the positive electrode of a power supply, and the other one of the transfer substrate and the electrode is connected with the negative electrode of the power supply; the transfer substrate and the Micro-LED chip form opposite charges;
a second solution is also layered on the upper surface of the first solution; the second solution and the first solution are not mutually infiltrated and have a density smaller than that of the first solution; after the Micro-LED chip enters the first solution through the second solution, the outer wall of the Micro-LED chip is provided with a vacuole formed by the second solution;
(3) the power supply is electrified; Micro-LED chips distributed in an array are adsorbed on the electrode array on the transfer substrate;
(4) inversely installing the transfer substrate and the bearing substrate to align the Micro-LED chip on the transfer substrate with the bonding pad on the bearing substrate;
(5) separating the Micro-LED chip from the surface of the transfer substrate and transferring the Micro-LED chip to a bonding pad of a bearing substrate;
(6) and (5) repeating the steps (2) to (5), and sequentially transferring the Micro-LED chips with various shapes to the same bearing substrate.
2. The transfer method of a Micro-LED chip as claimed in claim 1, wherein in the step (2), at least 2 electrode arrays are arranged on the transfer substrate;
each electrode array is provided with an adsorption station, and the adsorption stations on different electrode arrays are different in shape;
and the Micro-LED chips with the same shape are adsorbed on the adsorption stations with the corresponding shapes.
3. The transfer method of a Micro-LED chip as claimed in claim 2, wherein in the step (2), 3 electrode arrays are arranged on the transfer substrate; the plurality of Micro-LED chips are in one color of red, blue and green, and the Micro-LED chips in the same color are in the same shape;
and (6) obtaining the bearing substrate of the three primary colors Micro-LED chip.
4. The transfer method of a Micro-LED chip according to claim 1, wherein in the step (2), the transfer substrate is disposed in the first solution in a vertical state or a horizontal state, and the electrode is correspondingly parallel to the transfer substrate.
5. The transfer method of a Micro-LED chip according to claim 4, wherein step (3) is performed by passing a gas under the first solution.
6. A method for transferring a Micro-LED chip according to claim 5, characterized in that, at step (3), after passing a gas under the first solution, the container in which the first solution is located is sonicated.
7. A method for transferring a Micro-LED chip according to any of the claims 1 to 6, characterized in that said step (1) comprises the following steps:
(1-1) coating a surface treatment layer on the surface of the Micro-LED chip, which is away from the electrode side;
(1-2) soaking the surface treatment layer in a surface treatment solution, wherein the surface treatment solution contains polar organic matters.
8. A transfer method of Micro-LED chips according to claim 7, characterized in that in step (1-1) a surface treatment layer is obtained using epoxy resin coating.
9. The transfer method of a Micro-LED chip according to claim 8, wherein in the step (1-2), if the Micro-LED chip is positively charged, the polar organic substance is selected from one of poly dimethyl diallyl ammonium chloride, polyallylamine hydrochloride and aminopyrene;
if the Micro-LED chip is charged with negative electricity, the polar organic matter is selected from one of poly (acrylamide-dimethyl propane) sulfonic acid, PAZO, sodium polystyrene sulfonate and polyacrylic acid.
CN201911077056.6A 2019-11-06 2019-11-06 Transfer method of Micro-LED chip Active CN110767582B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911077056.6A CN110767582B (en) 2019-11-06 2019-11-06 Transfer method of Micro-LED chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911077056.6A CN110767582B (en) 2019-11-06 2019-11-06 Transfer method of Micro-LED chip

Publications (2)

Publication Number Publication Date
CN110767582A CN110767582A (en) 2020-02-07
CN110767582B true CN110767582B (en) 2020-05-26

Family

ID=69336212

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911077056.6A Active CN110767582B (en) 2019-11-06 2019-11-06 Transfer method of Micro-LED chip

Country Status (1)

Country Link
CN (1) CN110767582B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111199706A (en) * 2020-03-04 2020-05-26 深圳市思坦科技有限公司 Micro-LED device, detection method and display panel
CN111232614B (en) * 2020-03-06 2021-09-17 斯佩(新昌)科技有限公司 Interface adsorption type Micro LED arrangement robot assembly line complete machine and arrangement method
CN111415896B (en) * 2020-03-09 2022-11-15 广东工业大学 Single-class and multi-class micro object floating directional movement and autonomous loading mass transfer method
CN112420587A (en) * 2020-03-09 2021-02-26 点栈(绍兴)智能科技有限公司 Micro LED arrangement method based on electrophoresis robot
CN111430272B (en) * 2020-03-09 2023-02-03 广东工业大学 Single-class and multi-class micro-object suspension directional movement and autonomous loading mass transfer method
TWI742600B (en) * 2020-04-08 2021-10-11 台灣愛司帝科技股份有限公司 Initial led chip structure, image display device and chip classification system
CN112967966B (en) * 2020-05-06 2021-12-21 重庆康佳光电技术研究院有限公司 Mass transfer method and mass transfer equipment
CN113707768B (en) * 2020-05-22 2022-08-26 重庆康佳光电技术研究院有限公司 Micro-element recovery method and system
CN111725123B (en) * 2020-05-22 2022-12-20 深圳市隆利科技股份有限公司 Method for manufacturing micro light-emitting diode display device
CN112992754B (en) * 2020-05-22 2022-02-25 重庆康佳光电技术研究院有限公司 Mass transfer device and transfer method thereof
WO2021243615A1 (en) 2020-06-03 2021-12-09 重庆康佳光电技术研究院有限公司 Mass transfer device and method for micro light-emitting diodes
CN114074429B (en) * 2020-08-12 2024-01-12 重庆康佳光电技术研究院有限公司 Manufacturing method and manufacturing system of weakening structure
CN112071795A (en) * 2020-09-10 2020-12-11 Tcl华星光电技术有限公司 Transfer method of Micro-LED chip
CN112289907A (en) * 2020-09-11 2021-01-29 罗化芯显示科技开发(江苏)有限公司 Rapid and precise chip mass transfer process
CN114335286B (en) * 2020-09-30 2024-01-23 Tcl科技集团股份有限公司 Bonding method of LED chip
CN114156372A (en) * 2021-11-03 2022-03-08 南京阿吉必信息科技有限公司 Preparation and use method of semiconductor chip with asymmetric geometric structure
CN116364818B (en) * 2023-06-02 2023-11-24 惠科股份有限公司 Preparation method of LED lamp panel, LED lamp panel and display device
CN117153959A (en) * 2023-10-13 2023-12-01 深圳明阳电路科技股份有限公司 Packaging method of micro-led chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107863316A (en) * 2017-11-06 2018-03-30 上海天马微电子有限公司 Micro L ED transfer device, transfer method and manufacturing method thereof
CN109411392A (en) * 2018-10-16 2019-03-01 广东工业大学 A kind of the flood tide transfer device and transfer method of Micro-LED
CN109599411A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of controllable dispersing method and transfer method for the transfer of Micro-LED flood tide
CN109599463A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of pick-up structure and transfer method for the transfer of Micro-LED flood tide
CN110061106A (en) * 2019-04-24 2019-07-26 京东方科技集团股份有限公司 Chip, target base plate, manufacturing method, chip transfer method and display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060223225A1 (en) * 2005-03-29 2006-10-05 Symbol Technologies, Inc. Method, system, and apparatus for transfer of integrated circuit dies using an attractive force
CN109671670B (en) * 2017-10-16 2020-11-03 行家光电股份有限公司 Method and system for massively arranging micro-elements
CN108257905B (en) * 2018-01-10 2020-09-15 歌尔股份有限公司 Micro light emitting diode transfer method, display device and electronic equipment
CN109585342B (en) * 2018-11-30 2020-10-16 天马微电子股份有限公司 Micro light emitting diode transfer method and display panel
CN110034061B (en) * 2019-04-24 2021-05-14 京东方科技集团股份有限公司 Chip transfer method, chip and target substrate
CN110310907B (en) * 2019-07-02 2022-06-14 深圳市思坦科技有限公司 Micro-LED chip transfer method and display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107863316A (en) * 2017-11-06 2018-03-30 上海天马微电子有限公司 Micro L ED transfer device, transfer method and manufacturing method thereof
CN109411392A (en) * 2018-10-16 2019-03-01 广东工业大学 A kind of the flood tide transfer device and transfer method of Micro-LED
CN109599411A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of controllable dispersing method and transfer method for the transfer of Micro-LED flood tide
CN109599463A (en) * 2018-12-07 2019-04-09 广东工业大学 A kind of pick-up structure and transfer method for the transfer of Micro-LED flood tide
CN110061106A (en) * 2019-04-24 2019-07-26 京东方科技集团股份有限公司 Chip, target base plate, manufacturing method, chip transfer method and display device

Also Published As

Publication number Publication date
CN110767582A (en) 2020-02-07

Similar Documents

Publication Publication Date Title
CN110767582B (en) Transfer method of Micro-LED chip
KR102609560B1 (en) Semiconductor manufacturing apparatus
EP3796382B1 (en) Device for self-assembling semiconductor light-emitting diodes
CN110047866A (en) The transfer method of array substrate, display panel and miniature LED
CN109671670B (en) Method and system for massively arranging micro-elements
US20220351993A1 (en) Substrate for producing display device, and method for producing display device
EP4084067A1 (en) Apparatus and method of manufacturing display using light emitting element
EP4071789A2 (en) Substrate chuck for self-assembly of semiconductor light-emitting diodes
CN111492489A (en) Self-assembly device and method of semiconductor light-emitting element
TWI647810B (en) Giant array method and system for micro components
EP3796381B1 (en) Device and method for self-assembling semiconductor light-emitting diodes
EP3796378B1 (en) Device for self-assembling semiconductor light-emitting diodes
CN102660761A (en) Solar cell film plating equipment and film plating method
EP3731276B1 (en) Apparatus and method for self-assembling of semiconductor light-emitting element
CN111492488A (en) Display device using semiconductor light emitting element and method for manufacturing the same
EP3796379B1 (en) Substrate chuck for self-assembling semiconductor light-emitting diodes
US10643982B2 (en) Device with multiple vertically separated terminals and methods for making the same
EP3910665B1 (en) An intelligent integrated assembly and transfer apparatus for semiconductor light emitting device
CN202210534U (en) Semiconductor packaging structure
CN110364607B (en) Light emitting diode, display substrate, transfer device and method thereof
US20230031398A1 (en) Display device using semiconductor light-emitting element, and manufacturing method therefor
US12046484B2 (en) Module for removing mis-assembled semiconductor light-emitting element and method for removing mis-assembled semiconductor light-emitting element by using same
CN202712178U (en) Stereoscopic light-emitting device composed of upside-down mounted light-emitting unit arrays
CN210245498U (en) Microchip transfer equipment
EP4071788A1 (en) Chip tray for self-assembly and method for supplying semiconductor light emitting diode

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant