CN109411392A - A kind of the flood tide transfer device and transfer method of Micro-LED - Google Patents
A kind of the flood tide transfer device and transfer method of Micro-LED Download PDFInfo
- Publication number
- CN109411392A CN109411392A CN201811203703.9A CN201811203703A CN109411392A CN 109411392 A CN109411392 A CN 109411392A CN 201811203703 A CN201811203703 A CN 201811203703A CN 109411392 A CN109411392 A CN 109411392A
- Authority
- CN
- China
- Prior art keywords
- flip
- die bond
- micro
- led
- flexible material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 4
- 238000000518 rheometry Methods 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 230000005347 demagnetization Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 229920001746 electroactive polymer Polymers 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses the flood tide transfer device of Micro-LED a kind of, including die bond weldering arm, flip weldering arm, additional physics field device and station；It includes die bond guide rail, die bond bracket, die bond transfer head and die bond elastic flexible material that die bond, which welds arm,；It includes flip rotating electric machine, flip guide rail, flip bracket, flip transfer head and flip elastic flexible material that flip, which welds arm,.Correspondingly, the present invention also provides the flood tide transfer methods of Micro-LED a kind of.The flood tide transfer device and transfer method of Micro-LED of the invention, this limitation of transfer head template spacing can only be depended on by innovatively overcoming target base plate Micro-LED spacing, the rigid structure between original transfer head is substituted by elastic flexible material, and elastic flexible material longitudinal deformation is changed by additional physical field, realize the fully controllable flood tide transfer of electronic component spacing.
Description
Technical field
The present invention relates to the flood tide transfer devices and transfer of field of semiconductor manufacture more particularly to a kind of Micro-LED
Method.
Background technique
Micro-LED is a kind of by LED structure microminiaturization and matrixing, each pixel is operated alone and addressing control
The display technology of system.Due to the brightness of Micro-LED technology, service life, contrast, reaction time, energy consumption, visible angle and resolution
The various indexs such as rate are superior to LCD and OLED technology, are considered as that the display technology of new generation of OLED and tradition LED can be surmounted.But
Be, due to extreme efficiency in encapsulation process, 99.9999% yields and it is 0.5 μm positive and negative within shift the needs of precision, and
It is tens of thousands of to millions of that Micro-LED component size, which is approximately less than 50 μm and number, therefore in Micro-LED industrialization
The flood tide transfer (Mass Transfer) that overcome core technology problem is exactly Micro-LED component is still needed in the process
Technology.For modern Ultraprecision Machining, flood tide transfer is tens of thousands of to hundreds of thousands Micro-LED to base from wafer
Plate, huge challenge itself, processing efficiency, yields and transfer precision not can guarantee more.
Micro-LED flood tide transfer method mainly has at present, electrostatic force adsorption method, Van der Waals force transfer method, electromagnetism
Power adsorption method, the radium-shine laser ablation methods of patterning, fluid assembly method etc..The electrostatic force that u s company LuxVue is proposed
The Van der Waals force transfer method and TaiWan, China work that adsorption method, u s company X-Celeprint are proposed grind institute ITRI proposition
Electromagnetic force adsorption method accurately adsorbs flood tide Micro-LED respectively by electrostatic force, Van der Waals force and electromagnetic force, then
It is transferred to target substrate, and is precisely discharged.However, above-mentioned three kinds of methods can not solve Micro-LED spacing and substrate on wafer
The problem that upper Micro-LED spacing does not wait.Pattern radium-shine laser ablation methods laser lift-off Micro- directly from wafer
LED, but it is needed using expensive excimer laser.Fluid assembly method is rolled on substrate using brush bucket, so that
Micro-LED, by fluid force, allows LED to fall into the corresponding well on substrate as in liquid suspension.However, the method has
There is certain randomness, is unable to ensure the yield of self assembly.
United States Patent (USP) US20180053742A1 proposes electronic device being adhered to temporary fixing layer, by expanding this temporarily
When property fixing layer changes LED spacing to being transferred on bearing substrate.Due to fixing layer temporary in the method laterally and
It is longitudinal to expand, it is difficult to ensure horizontal transfer precision is unable to satisfy the demanding flood tide transfer of transverse precision, and temporary solid
Given layer expansion multiple is limited, is unable to satisfy big horizontal spacing.The Micro-LED's that Chinese patent CN201711162098 is proposed
Flood tide transfer method is only shifted to the asymmetrical LED of upper lower edge, and uses the mold being pre-designed, Wu Faman
Sufficient electronic component spacing.
In conclusion at present still without the flood tide transfer method and device of a kind of electronic component, need it is further proposed that efficiently,
Feasible solution.
Summary of the invention
It is an object of the invention to propose it is a kind of can in the target base plates such as panel or wafer flood tide transfer it is fully controllable
The flood tide transfer device and transfer method of the Micro-LED of spacing.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of flood tide transfer device of Micro-LED, including die bond weldering arm, flip weldering arm, additional physics field device and behaviour
Make platform, die bond weldering arm, flip weldering arm and additional physics field device are by being electrically connected in station, and flip weldering arm is for picking up
It Micro-LED and delivers to die bond on station and welds arm, die bond weldering arm is used to Micro-LED being transferred to installation position；
It includes die bond guide rail, die bond bracket, die bond transfer head and die bond elastic flexible material that die bond, which welds arm, and die bond bracket can
The setting of sliding on die bond guide rail, die bond bracket have it is multiple, the bottom of each die bond bracket is mounted on die bond transfer head,
Die bond elastic flexible material is provided between adjacent two die bonds bracket, die bond elastic flexible material stretches for changing adjacent two
Distance between die bond transfer head；
It includes flip rotating electric machine, flip guide rail, flip bracket, flip transfer head and flip elastic telescopic material that flip, which welds arm,
Material, flip rotating electric machine are connected for rotating flip guide rail with flip guide rail, and flip bracket is slidably disposed in flip
On guide rail, flip bracket has multiple, and each flip bracket base is mounted on flip transfer head, between adjacent two flips bracket
Be provided with flip elastic flexible material, flip elastic flexible material it is flexible for changing between adjacent two flips transfer head away from
From；
Die bond elastic flexible material or flip elastic flexible material occurs for generating physical field in additional physics field device
Deformation.
Further, die bond weldering arm further includes die bond limiting device and die bond spring, and the both ends of die bond guide rail are provided with
Die bond limiting device, die bond spring are set on guide rail, and each die bond elastic flexible material is corresponding with die bond spring, die bond limit
Position device and its between nearest die bond bracket have die bond spring；
Die bond spring has die bond pretightning force, and die bond pretightning force is greater than bullet when die bond elastic flexible material does not add physical field
Power adds elastic force when physical field less than die bond elastic flexible material.
Further, flip weldering arm further includes flip limiting device and flip spring, and the both ends of flip guide rail are provided with
Flip limiting device, flip spring are set on flip guide rail, and each flip elastic flexible material is corresponding with flip spring, are covered
Brilliant limiting device and its between nearest flip bracket have flip spring；
Flip spring has flip pretightning force, and flip pretightning force is greater than bullet when flip elastic flexible material does not add physical field
Power adds elastic force when physical field less than flip elastic flexible material.
Further, flip transfer head and die bond transfer head all have dipolar configuration, crawl when the two is applied to positive voltage
Micro-LED discharges Micro-LED when being applied to negative voltage.
Further, die bond elastic flexible material is thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetic
Magnetorheological elastomer；
Flip elastic flexible material is thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetorheological elasticity
Body；The physical field that additional physics field device generates is temperature field, electric field or magnetic field.
Further, thermotropic telescopic material is titanium alloy memory material；
Electrostriction material is that the energizations such as electroactive polymer expand and power off shrink-down material；
Magnetostriction materials are the excitation shape-changing material of silicon rubber and iron polymer composition；
Magnetic rheology elastic body is that excitation is hardened and demagnetization fluent material.
Further, die bond elastic flexible material and flip elastic flexible material be the response time be-ms.
A kind of transfer method of the flood tide transfer device using Micro-LED, comprising the following steps:
1) before shifting, flip transfer head and Micro-LED to be transferred is made to keep certain distance by station, it is to be transferred
Micro-LED is arranged on substrate, and adjacent two Micro-LED spacing is L1 on substrate, starts additional physics field device, is applied outer
Physical field makes flip elastic flexible material deformation occurs flip transfer head is driven to precisely align substrate Micro-LED, turns to flip
It moves when head applies positive voltage and grabs Micro-LED；
2) flip rotating electric machine overturns flip transfer head, while die bond transfer head is shifted close to flip transfer head and with flip
Head clamping Micro-LED imposes on positive voltage crawl Micro-LED to die bond transfer head, imposes on negative voltage pine to flip transfer head
Open Micro-LED；
3) die bond elastic flexible material is applied according to the Micro-LED spacing of required placement, required for calculating outer
Physics Flow Field Numerical is added to change die bond elastic flexible material longitudinal deformation, longitudinal length is c11 before die bond elastic flexible material deformation,
Longitudinal length is c2 after die bond elastic flexible material deformation, and target base plate Micro-LED spacing required for obtaining is L2；
4) Micro-LED of die bond transfer head crawl is positioned at target position, and die bond transfer head is made to move down into target base plate
After place Micro-LED when imposing on negative voltage；
5) step 1) -4 is repeated), realize the flood tide transfer of Micro-LED.
Further, in step 3), longitudinal length c1 before die bond elastic flexible material deformation, according to required placement
Micro-LED spacing determines the outer physics field condition applied, obtains die bond elastic flexible material vertical line deformation coefficient c, c2=
C1*c calculate after deformation longitudinal length be c2.
Further, in step 3), adjacent two Micro-LED spacing L, is denoted as every a Micro-LED on substrate
One crawl point, target base plate Micro-LED spacing L2, L2=L1*a*c.
Beneficial effects of the present invention: a kind of the flood tide transfer device and transfer method of Micro-LED innovatively overcome
Target base plate Micro-LED spacing can only depend on this limitation of transfer head template spacing, be substituted by elastic flexible material
Rigid structure between original transfer head, and elastic flexible material longitudinal deformation is changed by additional physical field, realize electronics member
The fully controllable flood tide transfer of part spacing.Apparatus of the present invention are simple, it is assumed that existing transfer device only has a die bond transfer head
Its efficiency is 1, and transfer device of the invention has a2A die bond transfer head, grabs LED effect on wafer/indigo plant film by c times of simultaneous retractable
Rate just improves a2C times, the spacing of electronic component is fully controllable and flood tide transfer is in target base plate, has in field of semiconductor manufacture
Great application value.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the flood tide transfer device of Micro-LED of one embodiment of the invention；
Fig. 2 is the schematic cross-section of the weldering arm absorption of flip shown in Fig. 1 Micro-LED；
Fig. 3 is the schematic cross-section of the overturning of flip transfer head shown in Fig. 1 and the docking exchange of die bond transfer head；
Fig. 4 is the schematic cross-section of alignment target substrate after the absorption of die bond transfer head shown in Fig. 1 Micro-LED；
Fig. 5 is that the die bond elastic flexible material of die bond transfer head shown in Fig. 4 applies section of the physical field after deformation occurs and shows
It is intended to；
Fig. 6 is the schematic cross-section of the placement Micro-LED of die bond transfer head shown in Fig. 5；
Fig. 7 is schematic cross-section of the die bond transfer head far from target base plate shown in fig. 6；
Fig. 8 is the schematic diagram that Micro-LED is arranged on substrate；
Fig. 9 is the schematic diagram of Micro-LED crawl point on substrate, and wherein black squares are the Micro- at crawl point
LED；
Figure 10 is crawl point schematic diagram when Micro-LED is grabbed again after being crawled once on substrate；
Figure 11 be on substrate Micro-LED be crawled it is secondary after crawl point schematic diagram when grabbing again；
Wherein: Micro-LED11, substrate 12, target base plate 13, die bond weldering arm 2, flip weld arm 3, die bond limiting device
21, die bond spring 22, die bond guide rail 23, die bond bracket 24, die bond transfer head 25, die bond elastic flexible material 26, flip rotation
Motor 31, flip limiting device 32, flip guide rail 33, flip spring 34, flip bracket 35, flip transfer head 36, flip elasticity
Telescopic material 37, substrate Micro-LED spacing L1, target base plate Micro-LED spacing L2, crawl point spacing a, elastic telescopic
Longitudinal length c2 after longitudinal length c1, elastic flexible material deformation before material vertical line deformation coefficient c, elastic flexible material deformation
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1-3, the flood tide transfer device of Micro-LED a kind of, including die bond welds arm 2, flip welds arm 3, additional
Physics field device and station, die bond weld arm 2, flip weldering arm 3 and additional physics field device by being electrically connected in station,
Flip weldering arm 3 is for Micro-LED on pick-up operation platform and delivers to die bond weldering arm, and die bond welds arm 2 and is used to turn Micro-LED
Move to installation position.
Station includes visualization PLC screen and integrated PLC control system as integrated control platform and controls die bond
Weld the movement of arm 2, flip weldering arm 3 and additional physics field device.The also included workbench of transfer device of the invention, die bond weldering
Arm 2 and flip weldering arm 3 are installed in the top of workbench, and two weldering arms can move in the vertical direction under the drive of motor
Dynamic, Micro-LED to be transferred and target base plate are both placed on workbench, and flip weldering arm 3 adsorbs Micro-LED to be transferred simultaneously
Die bond weldering arm 2 is passed it to, Micro-LED is transferred to target base plate by die bond weldering arm 2, realizes that the flood tide of Micro-LED turns
It moves.
It should be noted that blue film overlays on crystal column surface and Micro-LED is glued because Micro-LED is generated on wafer
Get up (at this moment Micro-LED has been turned, and pin is also overturn), so needing exactly to need by flip machine upside-down mounting
Two weldering arms again overturn Micro-LED once, so the present invention realizes the transfer of Micro-LED flood tide using two weldering arms.
Die bond welds arm 2 and includes die bond guide rail 23, die bond bracket 24, die bond transfer head 25 and die bond elastic flexible material 26,
Die bond bracket 24 is slidably disposed on die bond guide rail 23, and die bond bracket 24 has multiple, the bottom of each die bond bracket 24
It is mounted on die bond transfer head 25, is provided with die bond elastic flexible material 26 between adjacent two die bonds bracket 24, die bond elasticity is stretched
Compression material 26 stretches for changing the distance between adjacent two die bonds transfer head 25.Die bond elastic flexible material 26 is in a strip shape or block
Shape, both ends are connect with die bond bracket 24 respectively, when die bond elastic flexible material 26 by physical field deformation occurs when, can drive
Die bond transfer head 25 is mobile, and then changes the spacing of adjacent two die bonds transfer head 25.
It includes flip rotating electric machine 31, flip guide rail 33, flip bracket 35, flip transfer head 36 and flip that flip, which welds arm 3,
Elastic flexible material 37, flip rotating electric machine 31 are connected for rotating flip guide rail with flip guide rail, and flip bracket 35 can
The setting of sliding on flip guide rail 33, flip bracket 35 have it is multiple, each 35 bottom of flip bracket be mounted on flip turn
Head 36 is moved, flip elastic flexible material 37 is provided between adjacent two flips bracket 35, flip elastic flexible material 37 stretches
For changing the distance between adjacent two flips transfer head 36；Flip elastic flexible material 37 is in a strip shape or blocky, both ends difference
Connect with flip bracket 35, when flip elastic flexible material 37 by physical field deformation occurs when, can drive flip transfer head 36 move
It is dynamic, and then change the spacing of adjacent two flips transfer head 36.
Additional physics field device makes die bond elastic flexible material 26 or flip elastic flexible material 37 for generating physical field
Deformation occurs.Die bond guide rail 23 and flip guide rail 33 are precise guide rail, and bracket can do precise motion along guide rail.Die bond guide rail 23
With the slot for being oriented to for elastic flexible material deformation is provided on flip guide rail 33, with further accurate elastic flexible material
Deformation quantity improves precision.
Further, die bond weldering arm further includes die bond limiting device 21 and die bond spring 22, and the both ends of die bond guide rail 23 are equal
It is provided with die bond limiting device 21, die bond spring 22 is set on guide rail, and each die bond elastic flexible material 26 is corresponding with solid
Brilliant spring 22, die bond limiting device 21 and its between nearest die bond bracket 24 have die bond spring 22；
Die bond spring 22 has die bond pretightning force, when die bond pretightning force does not add physical field greater than die bond elastic flexible material 26
Elastic force, the elastic force less than die bond elastic flexible material 26 plus when physical field.
The setting of die bond limiting device 21 can limit die bond bracket 24 and move in the length range of die bond guide rail 23, can limit
Determine the contraction of die bond spring 22, the deformation of die bond elastic flexible material 26 can be limited.The die bond pretightning force of die bond spring 22 is set
So that die bond bracket 24 is realized steady movement, the mobile speed of die bond bracket 24 can be prevented when the moment for applying and disconnecting physical field
Degree variation is too fast, guarantees its stability.
Further, flip weldering arm further includes flip limiting device 32 and flip spring 34, and the both ends of flip guide rail 33 are equal
It is provided with flip limiting device 32, flip spring 34 is set on flip guide rail 33, and each flip elastic flexible material 37 is right
Should have a flip spring 34, flip limiting device 32 and its there is flip spring 34 between nearest flip bracket 35；
Flip spring 34 has flip pretightning force, when flip pretightning force does not add physical field greater than flip elastic flexible material 37
Elastic force, the elastic force less than flip elastic flexible material 37 plus when physical field.
The setting of flip limiting device 32 can limit flip bracket 35 and move in the length range of flip guide rail 34, can limit
Determine the contraction of flip spring 33, the deformation of flip elastic flexible material 37 can be limited.The flip pretightning force of flip spring 33 is set
So that flip bracket 35 is realized steady movement, the mobile speed of flip bracket 35 can be prevented when the moment for applying and disconnecting physical field
Degree variation is too fast, guarantees its stability.
Further, flip transfer head and die bond transfer head all have dipolar configuration, crawl when the two is applied to positive voltage
Micro-LED discharges Micro-LED when being applied to negative voltage.It is this apply generating positive and negative voltage realize Micro-LED crawl and
Release, can not only place damage of the transfer process to Micro-LED, moreover it is possible to simplify device structure, and grabbing can with release movement
It leans on.
Further, die bond elastic flexible material is thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetic
Magnetorheological elastomer；
Flip elastic flexible material is thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetorheological elasticity
Body；The physical field that additional physics field device generates is temperature field, electric field or magnetic field.
It is stretched it should be noted that identical elasticity can be used in both die bond elastic flexible material and flip elastic flexible material
Different types of elastic flexible material also can be selected in compression material.It, can be jointly same when the two uses identical elastic flexible material
One additional physics field device, the then at this point, deformed movement of the two need to carry out respectively；When the two uses different elastic flexible materials
When, then it needs that two externally-applied magnetic field devices are respectively set, the deformation movement of the two can carry out simultaneously, there is higher efficiency.
Thermotropic telescopic material is titanium alloy memory material；Electrostriction material is that the energizations such as electroactive polymer expand and break
Electric shrink-down material；Magnetostriction materials are the excitation shape-changing material of silicon rubber and iron polymer composition；Magnetic rheology elastic body is sharp
Magnetic hardening and demagnetization fluent material.Die bond elastic flexible material and flip elastic flexible material be the response time be 10-
100ms.By setting the response time of elastic flexible material, the efficiency of transfer can be improved.
A kind of transfer method of the flood tide transfer device using above-mentioned Micro-LED, comprising the following steps:
1) before shifting, flip transfer head 36 and Micro-LED to be transferred is made to keep certain distance by station, it is to be transferred
Micro-LED is arranged on substrate, and adjacent two Micro-LED spacing is L1 on substrate, starts additional physics field device, is applied outer
Physical field makes flip elastic flexible material deformation occurs flip transfer head 36 is driven to precisely align substrate Micro-LED, to flip
Transfer head 36 grabs Micro-LED (as shown in Figure 2) when applying positive voltage；
2) flip rotating electric machine 31 overturn flip transfer head 36, while die bond transfer head 25 close to flip transfer head 36 and with
Flip transfer head 36 clamps Micro-LED (as shown in Figure 3), imposes on positive voltage crawl Micro-LED to die bond transfer head 25, right
Flip transfer head 36 imposes on negative voltage and unclamps Micro-LED；
3) die bond elastic flexible material is applied according to the Micro-LED spacing of required placement, required for calculating outer
Physics Flow Field Numerical is added to change die bond elastic flexible material longitudinal deformation, longitudinal length is c1 before die bond elastic flexible material deformation
(Fig. 4), longitudinal length is c2 (Fig. 5) after die bond elastic flexible material deformation, between target base plate Micro-LED required for obtaining
Away from for L2；
4) Micro-LED that die bond transfer head 25 grabs is positioned at target position, and die bond transfer head 25 is made to move down into target
Micro-LED (Fig. 6) is placed when imposing on negative voltage after substrate；
5) step 1) -4 is repeated), the flood tide transfer of Micro-LED is realized, as shown in fig. 7, when die bond transfer head 25 is placed
Micro-LED is after target base plate, far from the target base plate, docks transfer Micro-LED again with flip weldering arm.
Further, longitudinal length c1 before the deformation of die bond elastic flexible material, according to the Micro-LED of required placement
Spacing determines the outer physics field condition applied, obtains die bond elastic flexible material vertical line deformation coefficient c, c2=c1*c is calculated
Longitudinal length is c2 after deformation.
Further, adjacent two Micro-LED spacing L1 on substrate is denoted as a crawl point every a Micro-LED,
Target base plate Micro-LED spacing L2, L2=L1*a*c.
As illustrated in figs. 8-11, after Micro-LED is transferred repeatedly on substrate, the starting point picked up a little changes, then needs
The crawl positioning for adjusting flip weldering arm realizes that Micro-LED is successively shifted on substrate.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (10)
1. the flood tide transfer device of Micro-LED a kind of, it is characterised in that: weld arm, additional physical field including die bond weldering arm, flip
Device and station, the die bond weldering arm, flip weldering arm, additional physics field device are described by being electrically connected in station
Flip weldering arm is for Micro-LED on pick-up operation platform and delivers to die bond weldering arm, and the die bond weldering arm is used for Micro-LED
It is transferred to installation position；
The die bond weldering arm includes die bond guide rail, die bond bracket, die bond transfer head and die bond elastic flexible material, the die bond support
Frame is slidably disposed on die bond guide rail, the die bond bracket have it is multiple, the bottom of each die bond bracket is respectively mounted
There is the die bond transfer head, is provided with the die bond elastic flexible material, the die bond bullet between the adjacent two die bond bracket
Property telescopic material it is flexible for changing the distance between adjacent two die bonds transfer head；
The flip weldering arm includes flip rotating electric machine, flip guide rail, flip bracket, flip transfer head and flip elastic telescopic material
Material, the flip rotating electric machine are connected for rotating flip guide rail with flip guide rail, and the flip bracket is slidably set
It sets on flip guide rail, the flip bracket has multiple, and each flip bracket base is mounted on flip transfer
Head is provided with the flip elastic flexible material between the adjacent two flip bracket, and the flip elastic flexible material is stretched
Contracting is for changing the distance between adjacent two flips transfer head；
The additional physics field device makes the die bond elastic flexible material or flip elastic flexible material for generating physical field
Deformation occurs.
2. the flood tide transfer device of Micro-LED according to claim 1 a kind of, which is characterized in that the die bond welds arm
It further include die bond limiting device and die bond spring, the both ends of the die bond guide rail are provided with the die bond limiting device, described
Die bond spring is set on guide rail, and each die bond elastic flexible material is corresponding with die bond spring, the die bond limit dress
Set has the die bond spring with it between nearest die bond bracket；
The die bond spring has die bond pretightning force, when the die bond pretightning force does not add physical field greater than die bond elastic flexible material
Elastic force, elastic force when physical field is added less than die bond elastic flexible material.
3. the flood tide transfer device of Micro-LED according to claim 1 a kind of, which is characterized in that the flip welds arm
It further include flip limiting device and flip spring, the both ends of the flip guide rail are provided with the flip limiting device, described
Flip spring is set on flip guide rail, and each flip elastic flexible material is corresponding with the flip spring, described to cover
Brilliant limiting device and its between nearest flip bracket have the flip spring；
The flip spring has flip pretightning force, when the flip pretightning force does not add physical field greater than flip elastic flexible material
Elastic force, elastic force when physical field is added less than flip elastic flexible material.
4. the flood tide transfer device of Micro-LED according to claim 1 a kind of, which is characterized in that the flip transfer
Head and die bond transfer head all have dipolar configuration, and the two grabs Micro-LED when being applied to positive voltage, releases when being applied to negative voltage
Put Micro-LED.
5. the flood tide transfer device of one kind according to claim 1, which is characterized in that the die bond elastic flexible material is
Thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetic rheology elastic body；
The flip elastic flexible material is thermotropic telescopic material, electrostriction material, magnetostriction materials or magnetorheological elasticity
Body；
The physical field that the additional physics field device generates is temperature field, electric field or magnetic field.
6. the flood tide transfer device of Micro-LED according to claim 5 a kind of, which is characterized in that described thermotropic flexible
Material is titanium alloy memory material；
The electrostriction material is that the energizations such as electroactive polymer expand and power off shrink-down material；
The magnetostriction materials are the excitation shape-changing material of silicon rubber and iron polymer composition；
The magnetic rheology elastic body is that excitation is hardened and demagnetization fluent material.
7. the flood tide transfer device of Micro-LED according to claim 5 a kind of, which is characterized in that the die bond elasticity
Telescopic material and flip elastic flexible material be the response time be-ms.
8. a kind of transfer method of the flood tide transfer device using any one of the claim 1-7 Micro-LED, feature exist
In, comprising the following steps:
1) before shifting, flip transfer head and Micro-LED to be transferred is made to keep certain distance, Micro- to be transferred by station
LED is arranged on substrate, and adjacent two Micro-LED spacing is L1 on substrate, starts additional physics field device, applies outer physical field
Make flip elastic flexible material deformation occurs flip transfer head is driven to precisely align substrate Micro-LED, flip transfer head is applied
Micro-LED is grabbed when adding positive voltage；
2) the flip rotating electric machine overturns flip transfer head, while die bond transfer head is shifted close to flip transfer head and with flip
Head clamping Micro-LED imposes on positive voltage crawl Micro-LED to the die bond transfer head, imposes on to the flip transfer head
Negative voltage unclamps Micro-LED；
3) according to the Micro-LED spacing of required placement, the additional object that die bond elastic flexible material is applied required for calculating
It manages Flow Field Numerical and changes die bond elastic flexible material longitudinal deformation, longitudinal length is c1, die bond before die bond elastic flexible material deformation
Longitudinal length is c2 after elastic flexible material deformation, and target base plate Micro-LED spacing required for obtaining is L2；
4) Micro-LED of the die bond transfer head crawl is positioned at target position, and the die bond transfer head is made to move down into target
Micro-LED is placed when imposing on negative voltage after substrate；
5) step 1) -4 is repeated), realize the flood tide transfer of Micro-LED.
9. the transfer method of the flood tide transfer device according to claim 8 using Micro-LED, which is characterized in that
In step 3), longitudinal length c1 before the die bond elastic flexible material deformation is true according to the Micro-LED spacing of required placement
Surely the outer physics field condition applied, obtains die bond elastic flexible material vertical line deformation coefficient c, c2=c1*c calculate after deformation
Longitudinal length is c2.
10. the transfer method of the flood tide transfer device according to claim 8 using Micro-LED, which is characterized in that
In step 3), adjacent two Micro-LED spacing L1 on the substrate is denoted as a crawl point every a Micro-LED, described
Target base plate Micro-LED spacing L2, L2=L1*a*c.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811203703.9A CN109411392B (en) | 2018-10-16 | 2018-10-16 | A kind of the flood tide transfer device and transfer method of Micro-LED |
| PCT/CN2018/124559 WO2020077863A1 (en) | 2018-10-16 | 2018-12-28 | Mass transfer apparatus and transfer method for micro-led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811203703.9A CN109411392B (en) | 2018-10-16 | 2018-10-16 | A kind of the flood tide transfer device and transfer method of Micro-LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109411392A true CN109411392A (en) | 2019-03-01 |
| CN109411392B CN109411392B (en) | 2019-06-25 |
Family
ID=65468142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811203703.9A Active CN109411392B (en) | 2018-10-16 | 2018-10-16 | A kind of the flood tide transfer device and transfer method of Micro-LED |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109411392B (en) |
| WO (1) | WO2020077863A1 (en) |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950194A (en) * | 2019-04-11 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of chip transfer base substrate and chip transfer method |
| CN110033704A (en) * | 2019-04-19 | 2019-07-19 | 京东方科技集团股份有限公司 | Transfer device and transfer method |
| CN110112091A (en) * | 2019-04-26 | 2019-08-09 | 清华大学深圳研究生院 | A kind of device of batch transferring plates bare die |
| CN110246785A (en) * | 2019-06-25 | 2019-09-17 | 京东方科技集团股份有限公司 | Transfer apparatus and transfer method |
| CN110289240A (en) * | 2019-06-27 | 2019-09-27 | 上海天马微电子有限公司 | Bulk transfer head and transfer method for electronic components |
| CN110289234A (en) * | 2019-07-04 | 2019-09-27 | 京东方科技集团股份有限公司 | For the flood tide transfer method of luminescence unit, array substrate and display device |
| CN110379761A (en) * | 2019-07-18 | 2019-10-25 | 京东方科技集团股份有限公司 | Micro- light emitting diode transfer base substrate and device |
| CN110767582A (en) * | 2019-11-06 | 2020-02-07 | 广东工业大学 | Transfer method of Micro-LED chip |
| CN110803524A (en) * | 2019-11-11 | 2020-02-18 | 兰泽(荆门)智能科技有限公司 | Electromagnetic variable-pitch element transfer device |
| CN110931392A (en) * | 2019-11-18 | 2020-03-27 | 錼创显示科技股份有限公司 | Micro-assembly transfer head, micro-assembly transfer device and micro-assembly display equipment |
| CN111128799A (en) * | 2019-11-18 | 2020-05-08 | 广东工业大学 | Alignment device and method for mass transfer of equidistant chip array |
| CN111490143A (en) * | 2020-04-20 | 2020-08-04 | 南京中电熊猫平板显示科技有限公司 | Display back plate, manufacturing method thereof and micro light-emitting diode display |
| CN111863690A (en) * | 2019-04-29 | 2020-10-30 | 云谷（固安）科技有限公司 | Batch transfer head and processing method thereof |
| CN112151437A (en) * | 2020-09-28 | 2020-12-29 | 武汉大学 | Micro-LED bulk transfer method and device |
| CN112582308A (en) * | 2020-12-14 | 2021-03-30 | 福州京东方光电科技有限公司 | Transfer method and transfer device of micro light-emitting diode |
| CN112635368A (en) * | 2020-12-29 | 2021-04-09 | Tcl华星光电技术有限公司 | Micro light emitting diode transfer equipment and transfer method |
| WO2021102877A1 (en) * | 2019-11-29 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Mass transfer carrier plate, mass transfer device, and method for same |
| WO2021102659A1 (en) * | 2019-11-26 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Micro device transfer apparatus and method |
| CN112967988A (en) * | 2020-11-04 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer device and method for micro-element |
| CN112967946A (en) * | 2020-05-28 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Mass transfer device and mass transfer method |
| CN112992758A (en) * | 2020-07-08 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Mass transfer device, method, system and equipment |
| CN112997288A (en) * | 2020-09-22 | 2021-06-18 | 泉州三安半导体科技有限公司 | Imprinting for light emitting diode transfer and transfer method thereof |
| CN112994528A (en) * | 2021-03-01 | 2021-06-18 | 东莞普莱信智能技术有限公司 | Mini LED flip massive transfer control system and control method |
| CN113517383A (en) * | 2021-03-17 | 2021-10-19 | 梦幻世界科技(珠海)有限公司 | Huge transfer device of Micro LED |
| WO2021232315A1 (en) * | 2020-05-20 | 2021-11-25 | 重庆康佳光电技术研究院有限公司 | Transfer device and transfer method |
| CN114530539A (en) * | 2020-11-23 | 2022-05-24 | 深圳市洲明科技股份有限公司 | LED die bonding system and die bonding method thereof |
| US11600508B2 (en) | 2019-11-18 | 2023-03-07 | PlayNitride Display Co., Ltd. | Micro-component transfer head, micro-component transfer device, and micro-component display |
| CN116338414A (en) * | 2023-05-31 | 2023-06-27 | 哈尔滨工业大学 | Micro-LED mass transfer electric performance testing device and testing method |
| CN116666508A (en) * | 2023-06-28 | 2023-08-29 | 深圳市凯意科技有限公司 | Mini/micro led laser huge transfer device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI800448B (en) * | 2022-08-23 | 2023-04-21 | 創新服務股份有限公司 | Mass transfer method and device for magnetic electronic components |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | Method for transferring huge amount of micro light-emitting diode chips |
| CN107863316A (en) * | 2017-11-06 | 2018-03-30 | 上海天马微电子有限公司 | Micro L ED transfer device, transfer method and manufacturing method thereof |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039706A (en) * | 2002-07-01 | 2004-02-05 | Yokogawa Electric Corp | Transport device |
| KR20040009803A (en) * | 2002-07-25 | 2004-01-31 | 삼성전자주식회사 | Pick and place apparatus for semiconductor chip package that vacuum pad pitch setting is free |
| CN107768487A (en) * | 2016-08-18 | 2018-03-06 | 新世纪光电股份有限公司 | The method of flood tide transferred-electron device |
| KR101951288B1 (en) * | 2017-03-28 | 2019-02-22 | 삼성전자주식회사 | Pickup unit and pickup system of semiconductor package including the same |
| CN107910413B (en) * | 2017-11-21 | 2019-07-12 | 福州大学 | A kind of the flood tide transfer device and transfer method of MicroLED |
-
2018
- 2018-10-16 CN CN201811203703.9A patent/CN109411392B/en active Active
- 2018-12-28 WO PCT/CN2018/124559 patent/WO2020077863A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | Method for transferring huge amount of micro light-emitting diode chips |
| CN107863316A (en) * | 2017-11-06 | 2018-03-30 | 上海天马微电子有限公司 | Micro L ED transfer device, transfer method and manufacturing method thereof |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
Cited By (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950194A (en) * | 2019-04-11 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of chip transfer base substrate and chip transfer method |
| CN110033704A (en) * | 2019-04-19 | 2019-07-19 | 京东方科技集团股份有限公司 | Transfer device and transfer method |
| CN110112091A (en) * | 2019-04-26 | 2019-08-09 | 清华大学深圳研究生院 | A kind of device of batch transferring plates bare die |
| CN111863690A (en) * | 2019-04-29 | 2020-10-30 | 云谷（固安）科技有限公司 | Batch transfer head and processing method thereof |
| CN111863690B (en) * | 2019-04-29 | 2023-10-20 | 成都辰显光电有限公司 | Batch transfer head and processing method thereof |
| CN110246785A (en) * | 2019-06-25 | 2019-09-17 | 京东方科技集团股份有限公司 | Transfer apparatus and transfer method |
| CN110289240A (en) * | 2019-06-27 | 2019-09-27 | 上海天马微电子有限公司 | Bulk transfer head and transfer method for electronic components |
| CN110289234B (en) * | 2019-07-04 | 2021-08-17 | 京东方科技集团股份有限公司 | Mass transfer method for light emitting unit, array substrate and display device |
| CN110289234A (en) * | 2019-07-04 | 2019-09-27 | 京东方科技集团股份有限公司 | For the flood tide transfer method of luminescence unit, array substrate and display device |
| US11404399B2 (en) | 2019-07-18 | 2022-08-02 | Beijing Boe Display Technology Co., Ltd. | Chip transfer substrate, chip transfer device and chip transfer method |
| CN110379761A (en) * | 2019-07-18 | 2019-10-25 | 京东方科技集团股份有限公司 | Micro- light emitting diode transfer base substrate and device |
| CN110379761B (en) * | 2019-07-18 | 2021-08-24 | 京东方科技集团股份有限公司 | Micro light-emitting diode transfer substrate and device |
| CN110767582B (en) * | 2019-11-06 | 2020-05-26 | 广东工业大学 | Transfer method of Micro-LED chip |
| CN110767582A (en) * | 2019-11-06 | 2020-02-07 | 广东工业大学 | Transfer method of Micro-LED chip |
| CN110803524A (en) * | 2019-11-11 | 2020-02-18 | 兰泽(荆门)智能科技有限公司 | Electromagnetic variable-pitch element transfer device |
| CN110931392A (en) * | 2019-11-18 | 2020-03-27 | 錼创显示科技股份有限公司 | Micro-assembly transfer head, micro-assembly transfer device and micro-assembly display equipment |
| CN111128799A (en) * | 2019-11-18 | 2020-05-08 | 广东工业大学 | Alignment device and method for mass transfer of equidistant chip array |
| CN111128799B (en) * | 2019-11-18 | 2023-04-11 | 广东工业大学 | Alignment device and method for mass transfer of equidistant chip array |
| US11600508B2 (en) | 2019-11-18 | 2023-03-07 | PlayNitride Display Co., Ltd. | Micro-component transfer head, micro-component transfer device, and micro-component display |
| WO2021102659A1 (en) * | 2019-11-26 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Micro device transfer apparatus and method |
| WO2021102877A1 (en) * | 2019-11-29 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Mass transfer carrier plate, mass transfer device, and method for same |
| CN111490143B (en) * | 2020-04-20 | 2021-07-13 | 南京中电熊猫液晶显示科技有限公司 | Display back plate, manufacturing method thereof and micro light-emitting diode display |
| CN111490143A (en) * | 2020-04-20 | 2020-08-04 | 南京中电熊猫平板显示科技有限公司 | Display back plate, manufacturing method thereof and micro light-emitting diode display |
| WO2021232315A1 (en) * | 2020-05-20 | 2021-11-25 | 重庆康佳光电技术研究院有限公司 | Transfer device and transfer method |
| CN112967946A (en) * | 2020-05-28 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Mass transfer device and mass transfer method |
| CN112992758A (en) * | 2020-07-08 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Mass transfer device, method, system and equipment |
| CN112997288A (en) * | 2020-09-22 | 2021-06-18 | 泉州三安半导体科技有限公司 | Imprinting for light emitting diode transfer and transfer method thereof |
| CN112997288B (en) * | 2020-09-22 | 2024-05-24 | 泉州三安半导体科技有限公司 | Embossing for light-emitting diode transfer and transfer method thereof |
| WO2022061512A1 (en) * | 2020-09-22 | 2022-03-31 | 泉州三安半导体科技有限公司 | Imprint and transferring method for transferring light emitting diode |
| CN112151437A (en) * | 2020-09-28 | 2020-12-29 | 武汉大学 | Micro-LED bulk transfer method and device |
| CN112151437B (en) * | 2020-09-28 | 2024-03-08 | 江苏穿越光电科技有限公司 | Micro-LED huge transfer method and device |
| CN112967988A (en) * | 2020-11-04 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer device and method for micro-element |
| CN114530539A (en) * | 2020-11-23 | 2022-05-24 | 深圳市洲明科技股份有限公司 | LED die bonding system and die bonding method thereof |
| CN114530539B (en) * | 2020-11-23 | 2024-10-08 | 深圳市洲明科技股份有限公司 | LED die bonding system and die bonding method thereof |
| CN112582308B (en) * | 2020-12-14 | 2022-10-28 | 福州京东方光电科技有限公司 | Transfer method and transfer device of micro light-emitting diode |
| CN112582308A (en) * | 2020-12-14 | 2021-03-30 | 福州京东方光电科技有限公司 | Transfer method and transfer device of micro light-emitting diode |
| CN112635368A (en) * | 2020-12-29 | 2021-04-09 | Tcl华星光电技术有限公司 | Micro light emitting diode transfer equipment and transfer method |
| CN112994528A (en) * | 2021-03-01 | 2021-06-18 | 东莞普莱信智能技术有限公司 | Mini LED flip massive transfer control system and control method |
| CN113517383B (en) * | 2021-03-17 | 2022-09-20 | 梦幻世界科技(珠海)有限公司 | Huge transfer device of Micro LED |
| CN113517383A (en) * | 2021-03-17 | 2021-10-19 | 梦幻世界科技(珠海)有限公司 | Huge transfer device of Micro LED |
| CN116338414A (en) * | 2023-05-31 | 2023-06-27 | 哈尔滨工业大学 | Micro-LED mass transfer electric performance testing device and testing method |
| CN116338414B (en) * | 2023-05-31 | 2023-08-04 | 哈尔滨工业大学 | Micro-LED mass transfer electric performance testing device and testing method |
| CN116666508A (en) * | 2023-06-28 | 2023-08-29 | 深圳市凯意科技有限公司 | Mini/micro led laser huge transfer device |
| CN116666508B (en) * | 2023-06-28 | 2024-04-02 | 深圳市凯意科技有限公司 | Mini/micro led laser huge transfer device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109411392B (en) | 2019-06-25 |
| WO2020077863A1 (en) | 2020-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109411392B (en) | A kind of the flood tide transfer device and transfer method of Micro-LED | |
| CN109449100B (en) | A kind of the flood tide transfer method and device of electronic component | |
| TWI654587B (en) | Device for manufacturing electronic device using device wafer | |
| US20210219476A1 (en) | Variable pitch electronic component mass transfer apparatus and method | |
| WO2020125201A1 (en) | Temperature-controlled adhesion type micro-led massive transfer method | |
| US7585703B2 (en) | Pixel control element selection transfer method, pixel control device mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate | |
| CN109950194B (en) | Chip transfer substrate and chip transfer method | |
| CN102236199B (en) | Apparatus and method of fabricating flat panel display device | |
| US20110155317A1 (en) | Manufacturing method of flat-panel display device and bonding press apparatus therefor | |
| CN105346250A (en) | Electro-hydro dynamics nanofluid printing method and device adopting parallel mechanism | |
| KR102060831B1 (en) | Flip chip packaging method, flux head using the same and flux head manufacturing method thereof | |
| CN104582305B (en) | Flexible circuit board hot-press arrangement, system of processing and method based on glass circuit board | |
| CN104766870A (en) | Display panel and preparation method and display device thereof | |
| CN110112091A (en) | A kind of device of batch transferring plates bare die | |
| CN204221205U (en) | A kind of clamping device of mask plate and assembly thereof | |
| CN111490143A (en) | Display back plate, manufacturing method thereof and micro light-emitting diode display | |
| CN101318169B (en) | Glue spreading apparatus, using and maintaining method for the glue spreading apparatus | |
| JP6469164B2 (en) | Flexible board bending equipment | |
| JP3246282B2 (en) | Display panel module manufacturing apparatus and display panel module manufacturing method | |
| CN111716867B (en) | Multi-point fitting curved surface fitting equipment, control method and control system | |
| CN205112671U (en) | Adopt parallel mechanism's electric fluid dynamics nano -fluids printing device | |
| CN210245498U (en) | Microchip transfer equipment | |
| CN111128798B (en) | Thin film stretching transverse alignment mechanism and alignment device using same | |
| CN114121914A (en) | Display panel, manufacturing method thereof and display device | |
| CN210548719U (en) | Welding tool based on power electronic component manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |