CN114121914A - Display panel, manufacturing method thereof and display device - Google Patents
Display panel, manufacturing method thereof and display device Download PDFInfo
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- CN114121914A CN114121914A CN202111487777.1A CN202111487777A CN114121914A CN 114121914 A CN114121914 A CN 114121914A CN 202111487777 A CN202111487777 A CN 202111487777A CN 114121914 A CN114121914 A CN 114121914A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes: a substrate base plate; the first electrode layer is arranged on the substrate base plate and comprises a connecting pad; the short circuit metal layer is arranged on the first electrode layer and comprises a first through hole which takes the connecting pad as a center, and the short circuit metal layer is connected with the first electrode layer through the first through hole; the micro light-emitting diode comprises a light-emitting layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on two sides of the light-emitting layer; and a second electrode layer electrically connected to the second electrode. The display panel, the manufacturing method thereof and the display device can improve the alignment precision of the micro light-emitting diode during transfer on the premise of not increasing the process.
Description
Technical Field
The disclosure relates to the technical field of display, and in particular to a display panel, a manufacturing method thereof and a display device.
Background
With the vigorous development of the display industry, Micro light emitting diodes (Micro LEDs) have been on the era stage as a new generation of display technology, and compared with the existing technologies such as OLEDs and LCDs, the Micro LEDs have the characteristics of higher brightness, lower power consumption, better luminous efficiency, longer service life and the like.
At present, in the process of manufacturing a micro light emitting diode, thousands or even tens of thousands of red, green and blue three primary color LED micro crystal grains need to be welded to a specific area of a corresponding pixel through a huge transfer technology. The existing transfer technology cannot realize one-time accurate alignment of the Micro LED, so that the position of the Micro LED is deviated.
Disclosure of Invention
In view of the above, an object of the present disclosure is to provide a display panel, a method for manufacturing the same, and a display device.
In view of the above object, the present disclosure provides a display panel including:
a substrate base plate;
the first electrode layer is arranged on the substrate base plate and comprises a connecting pad;
the short circuit metal layer is arranged on the first electrode layer and comprises a first through hole which takes the connecting pad as a center, and the short circuit metal layer is connected with the first electrode layer through the first through hole;
the micro light-emitting diode comprises a light-emitting layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on two sides of the light-emitting layer;
and a second electrode layer electrically connected to the second electrode.
Optionally, the method further includes:
the first insulating layer is arranged between the first electrode layer and the short circuit metal layer and comprises a second through hole concentrically arranged with the first through hole, and the orthographic projection of the first through hole on the substrate base plate is positioned in the orthographic projection of the second through hole on the substrate base plate.
Optionally, the method further includes:
a scan line connected to the second electrode layer;
a short circuit metal lead connected with the short circuit metal layer;
the scanning lines, the short circuit metal leads and the short circuit metal layer are arranged on the same layer.
Optionally, the method further includes:
and the data line is vertically insulated and crossed with the scanning line and the short-circuit metal lead wire on the substrate base plate, is connected with the first electrode layer and is arranged on the same layer as the first electrode layer.
Optionally, the method further includes:
a second insulating layer disposed between the substrate base plate and the first electrode layer;
and the third insulating layer is arranged between the short circuit metal layer and the second electrode layer.
Optionally, the connection pad is provided with a first bonding metal unit, one side of the micro light emitting diode facing the substrate base plate is provided with a second bonding metal unit, and the first bonding metal unit is in bonding connection with the second bonding metal unit.
Optionally, the first electrode layer is provided with a third via hole, and the first bonding metal unit is disposed in the third via hole; the distance between one surface, far away from the substrate base plate, of the first bonding metal unit and the substrate base plate is the same as the distance between one surface, far away from the substrate base plate, of the first electrode layer and the substrate base plate.
Optionally, the first via hole is a circular hole.
Optionally, the second electrode layer includes:
the first electrode part is parallel to the scanning line, and one end of the first electrode part is connected with the micro light-emitting diode;
and the second electrode part is vertical to the scanning line, one end of the second electrode part is connected with the other end of the first electrode part, and the other end of the second electrode part is connected with the scanning line.
The present disclosure also provides a display device comprising the display panel according to any one of the above.
The present disclosure also provides a method for manufacturing a display panel, including:
providing a substrate base plate;
forming a first electrode layer on the substrate base plate, wherein the first electrode layer comprises a connecting pad;
forming a short circuit metal layer on the first electrode layer, wherein the short circuit metal layer comprises a first through hole which takes the connecting pad as a center, and the short circuit metal layer is connected with the first electrode layer at the edge of the first through hole;
forming a bonding sacrificial layer in the first through hole, wherein the bonding sacrificial layer takes the connecting pad as a center;
transferring the micro light-emitting diode to the region where the bonding sacrificial layer is located and enabling the micro light-emitting diode to be suspended on the surface, far away from the substrate, of the bonding sacrificial layer;
controlling the short circuit metal layer to heat the bonding sacrificial layer so as to change the phase state of the bonding sacrificial layer, so that the micro light-emitting diode moves to the center of the bonding sacrificial layer, and a first electrode of the micro light-emitting diode is connected with the connecting pad;
and forming a second electrode layer which is electrically connected with the second electrode of the micro light-emitting diode.
Optionally, the bonding sacrificial layer includes a water vapor layer or a thermosetting material film layer;
the controlling the short circuit metal layer to heat the bonding sacrificial layer to change the phase state of the bonding sacrificial layer, so that the micro light emitting diode moves to the center of the bonding sacrificial layer, and the first electrode of the micro light emitting diode is connected with the connection pad, and the method includes:
and applying micro current to the short circuit metal layer to enable the connection part of the short circuit metal layer and the first electrode layer to generate heat so as to heat the bonding sacrificial layer, and gradually evaporating or curing the bonding sacrificial layer from the edge to the center so as to enable the micro light-emitting diode to move to the connection pad and enable the first electrode to be connected with the connection pad.
As can be seen from the above, according to the display panel, the manufacturing method thereof, and the display device provided by the present disclosure, the short circuit metal layer is disposed on the first electrode layer, so that when the display panel is manufactured, even if the micro light emitting diode is not placed in the center of the bonding region during the transfer process, the bonding sacrificial layer formed in the first via hole can be heated by the short circuit metal layer, so that the micro light emitting diode is pushed to the center of the bonding region and connected to the connection pad on the first electrode layer when the bonding sacrificial layer is gradually evaporated or cured from the edge to the center, thereby improving the alignment accuracy during the transfer of the micro light emitting diode without increasing the process.
Drawings
In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, and it is obvious that the drawings in the following description are only embodiments of the present disclosure, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic alignment diagram of a micro LED in the related art;
FIG. 2 is a schematic diagram of a hierarchical structure of a display panel according to an embodiment of the disclosure;
fig. 3 is another schematic structural diagram of a display panel according to an embodiment of the disclosure;
fig. 4 is a schematic plan view of a display panel according to an embodiment of the disclosure;
FIG. 5 is a schematic view illustrating alignment of a micro light emitting diode according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of an array of a display panel according to an embodiment of the disclosure;
fig. 7 is a schematic flowchart of a manufacturing method of a display panel according to an embodiment of the disclosure;
fig. 8 is a schematic diagram illustrating a transfer process of a micro led according to an embodiment of the disclosure.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
It is to be noted that technical terms or scientific terms used in the embodiments of the present disclosure should have a general meaning as understood by those having ordinary skill in the art to which the present disclosure belongs, unless otherwise defined. The use of "first," "second," and similar terms in the embodiments of the disclosure is not intended to indicate any order, quantity, or importance, but rather to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The Micro light emitting diode (Micro LED) has the characteristics of low power consumption, high brightness, ultrahigh resolution, high color saturation, high response speed, long service life and the like. Compared with the LCD and the OLED, the Micro LED has high unit energy density, so that the Micro LED has lower power consumption under the same brightness requirement, or has higher brightness and smaller light-emitting area under the same power consumption condition, and therefore, higher resolution can be realized. Currently, the resolution of Micro LED panels can reach 1500PPI, and therefore, the advantages of Micro LED display panels are no doubt.
The structure of the micro light-emitting diode mainly comprises a substrate, a micro light-emitting diode grain and a drive IC. The micro light-emitting diode is difficult to directly grow on the glass substrate, the micro light-emitting diode crystal grains grown on other substrates need to be uniformly transferred onto the glass substrate by means of a transfer technology according to necessary optical and electrical specifications, and the allowable reject ratio is only one of tens of thousands.
In view of the tiny size (generally less than or equal to 50 μm), the large growth density and the huge transfer number of the micro light emitting diode crystal grains, the micro light emitting diode crystal grains generally need to be realized by using an ultrahigh precision transfer device and a transfer head, which brings great difficulties and challenges to the transfer device and the transfer technology, and becomes one of the biggest problems hindering the mass production of the micro light emitting diode crystal grains. The current transfer technology is difficult to realize accurate alignment, and the position of the micro light-emitting diode crystal grain is deviated in the process of adsorbing the micro light-emitting diode crystal grain by the transfer head and aligning the micro light-emitting diode crystal grain and the bonding metal, as shown in fig. 1. Meanwhile, the large-sized transfer back plate itself may generate large deformation (expansion with heat and contraction with cold, etc.) due to the change of the external temperature or humidity, which also causes the transfer uniformity to be deteriorated.
In view of this, the present disclosure provides a display panel, which can achieve precise alignment of micro led dies. As shown in fig. 2, the display panel includes a substrate base plate 1, a first electrode layer 3, a short circuit metal layer 5, a micro light emitting diode 10, and a second electrode layer 12.
The substrate 1 may be a glass substrate, a PI substrate, or the like. In some embodiments, the substrate 1 may also be a TFT array substrate, which is not limited in this embodiment.
The first electrode layer 3 is disposed on the substrate 1, and includes a connection pad for connecting the first electrode layer 3 and the micro light emitting diode 10. In some embodiments, the first electrode layer 3 includes a bonding region for bonding the micro light emitting diode 10 and the first electrode layer 3, and the bonding pad is disposed in the bonding region. Alternatively, the bonding pad may be disposed at the center of the bonding region. The first electrode layer 3 may be a metal electrode, for example, a copper (Cu) electrode.
The short circuit metal layer 5 is disposed on the first electrode layer 3, and includes a first via hole 13, and the first via hole 13 is centered on the connection pad; meanwhile, the short-circuit metal layer 5 is connected with the first electrode layer 3 through the first via hole 13. Specifically, the short circuit metal layer 5 is connected to the first electrode layer 3 at the edge of the first via hole 13, and the short circuit metal layer 5 is insulated from the first electrode layer 3 at the non-edge of the first via hole 13.
In some embodiments, as shown in fig. 3, a bonding sacrificial layer 7 is also disposed within the first via 13. The short-circuit metal layer 5 is used for heating the bonding sacrificial layer 7 to change the phase state of the bonding sacrificial layer, so that the micro light-emitting diode 10 moves to the center of the bonding sacrificial layer 7 and is connected with the connecting pad.
Specifically, when a transfer head (transfer head) of a bulk transfer apparatus moves the micro light emitting diode 10 to a position above the connection pad of the first electrode layer 3, and places the micro light emitting diode 10 in the bonding region of the first electrode layer 3 by means of de-gluing, electrostatic discharge, vacuum discharge, or the like, the bonding sacrificial layer can carry the micro light emitting diode 10 and make the micro light emitting diode 10 suspend on the surface of the bonding sacrificial layer 7 away from the substrate 1.
The material of the bonding sacrificial layer 7 may include a material whose phase is changeable under a heating condition, such as water vapor, a thermosetting material, and the like. Thus, when a micro-current is applied to the short-circuit metal layer 5, the connection part of the short-circuit metal layer 5 and the first electrode layer 3, namely the edge of the first via hole 13, generates heat first due to short circuit, and the first electrode layer 3 is made of metal material, so that the metal has heat conduction, and the heat is gradually transferred inwards from the connection part of the short-circuit metal layer 5 and the first electrode layer 3; during the process of heat conduction, the bonding sacrificial layer 7 gradually evaporates or solidifies along the direction of heat conduction, i.e. the bonding sacrificial layer 7 gradually evaporates or solidifies from edge to center, during which the micro light emitting diode 10 suspended on the surface of the bonding sacrificial layer 7 is pushed into the center of the first via hole 13, i.e. the position of the connection pad at the center of the bonding region, by the action of the surface tension or viscous force of the bonding sacrificial layer 7, so that the micro light emitting diode 10 can be connected with the connection pad at the center of the bonding region.
That is, in the present embodiment, the short circuit metal layer 5 is used for generating heat under the action of micro current, so as to heat the bonding sacrificial layer 7, so that the bonding sacrificial layer 7 gradually evaporates or solidifies from the edge to the center to change the surface tension or viscous force of the bonding sacrificial layer 7, and the micro light emitting diode 10 is controlled to move to the connection pad and to be in active connection with the connection pad according to the surface tension or viscous force. As shown in fig. 5, the micro light emitting diode 10 may be aligned with the bonding region.
The micro light emitting diode 10 is disposed in the first via hole 13. The micro light emitting diode 10 is of a vertical structure and comprises a light emitting layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on two sides of the light emitting layer, the first electrode, the light emitting layer and the second electrode are sequentially arranged along the direction away from the substrate base plate 1, the first electrode of the micro light emitting diode 10 is connected with the connecting pad, namely the first electrode of the micro light emitting diode 10 is connected with the first electrode layer 3, and therefore a first electrode signal can be input into the micro light emitting diode 10 through the first electrode layer 3.
The material of the light emitting layer may be gallium nitride (GaN). Meanwhile, the first electrode can be an N-type electrode, and the second electrode can be a P-type electrode; alternatively, the first electrode may be a P-type electrode, and the second electrode may be an N-type electrode, which is not limited in this embodiment.
In this embodiment, after the micro light emitting diode 10 is actively connected to the connection pad, a certain pressure may be applied to the micro light emitting diode 10, so that the micro light emitting diode 10 and the connection pad of the first electrode layer 3 are eutectic bonded and the rigid connection between the micro light emitting diode 10 and the first electrode layer 3 is finally realized.
The second electrode layer 12 is disposed on a side of the micro light emitting diode 10 away from the substrate 1, and the second electrode layer 12 is electrically connected to the second electrode of the micro light emitting diode 10, so that a second electrode signal can be input to the micro light emitting diode 10 through the second electrode layer 12, and the micro light emitting diode 10 emits light under the control of the first electrode signal and the second electrode signal. Alternatively, the second electrode layer 12 may be a transparent electrode, such as Indium Tin Oxide (ITO), so as to improve the efficiency of light emission.
Alternatively, the first electrode layer 3 may be an anode layer and the second electrode layer 12 may be a cathode layer. If necessary, the first electrode layer 3 can also be a cathode layer, and the second electrode layer 12 can be an anode layer, which is not limited in this embodiment.
In the display panel of this embodiment, the short circuit metal layer is disposed on the first electrode layer, so that when the display panel is manufactured, even if the micro light emitting diode is not placed in the center of the bonding region during the transfer process, the bonding sacrificial layer formed in the first via hole can be heated by the short circuit metal layer, so that the micro light emitting diode is pushed to the center of the bonding region and connected to the connection pad of the first electrode layer when the bonding sacrificial layer is gradually evaporated or cured from the edge to the center, and the alignment accuracy during the transfer of the micro light emitting diode is improved without increasing the manufacturing process.
Optionally, in the above embodiment, when the bonding sacrificial layer 7 is a water vapor layer, the short circuit metal layer 5 is configured to generate heat under the action of a micro current, so as to heat the water vapor layer, so that the water vapor layer gradually evaporates from the edge to the center to change the surface tension of the water vapor layer, and the micro light emitting diode is controlled to move to the connection pad and be actively connected to the connection pad according to the surface tension.
Optionally, when the bonding sacrificial layer 7 is a thermosetting material layer such as an unsaturated polyester resin (UF), an epoxy resin (EP), a silicone resin (SI), a Polyurethane (PU), a fluororesin, an ORG layer, etc., the short circuit metal layer 5 is configured to generate heat under the action of a micro current, so as to heat the thermosetting material layer, so that the thermosetting material layer is gradually cured from the edge to the center to change the viscosity of the thermosetting material layer, and the micro light emitting diode 10 is controlled to move to the connection pad according to the viscosity. The thermosetting material layer is a liquid film layer with certain viscosity before curing, so that the micro light-emitting diode 10 can be carried and the micro light-emitting diode 10 is suspended on the thermosetting material layer; when the micro light-emitting diode is heated, the thermosetting material layer gradually changes into gel in the curing process, and the viscosity force of the surface of the thermosetting material layer changes, so that the micro light-emitting diode 10 moves to the central area of the thermosetting material layer, namely above the connecting pad; then, pressure is applied to the micro light emitting diode 10, so that the micro light emitting diode 10 can be directly connected to the connection pad on the first electrode layer 3. And for the part of the thermosetting material layer left in the first via hole 13, the part of the thermosetting material layer may be peeled off; alternatively, the bonding sacrificial layer 7 is made of the same or similar material as the third insulating layer 11, so that even if a part of the thermosetting material layer remains in the first via hole 13, the remaining part of the thermosetting material is cured together with the material of the third insulating layer 11 to form the third insulating layer 11 when the third insulating layer 11 is subsequently made.
In some embodiments, as shown in fig. 2, the display panel further comprises a first insulating layer 4. The first insulating layer 4 is disposed between the first electrode layer 3 and the short-circuit metal layer 5, and includes a second via hole 14 concentrically disposed with the first via hole 13, and an orthographic projection of the first via hole 13 on the substrate base plate 1 is located in an orthographic projection of the second via hole 14 on the substrate base plate 1, that is, the first via hole 13 is smaller than the second via hole 14, so that the short-circuit metal layer 5 can be connected to the first electrode layer 3 at an edge of the first via hole 13.
In some embodiments, as shown in fig. 4, the display panel further includes scan lines 6 and short-circuit metal leads 51. The scan line 6 is disposed at one side of the short-circuit metal layer 51, the scan line 6 is connected to the second electrode layer 12, and a second electrode signal is input to the second electrode layer 12 through the scan line 6. The short circuit metal lead 51 is arranged on the other side of the short circuit metal layer 5 and is parallel to the scanning line 6; the short circuit metal lead 51 is connected with the short circuit metal layer 5 and is used for inputting micro current to the short circuit metal layer 5 so as to enable the connection part of the short circuit metal layer 5 and the first electrode layer 3 to be short-circuited and generate heat.
Optionally, as shown in fig. 4, both the first electrode layer 3 and the short-circuit metal layer 5 may have a rectangular structure, or may also have a circular structure, a diamond structure, and the like, and the short-circuit metal layer 5 having the rectangular structure, the circular structure, the diamond structure, and the like may be used as a Mark (Mark) in the bonding process of the micro light-emitting diode 10. Meanwhile, the area of the short-circuit metal layer 5 needs to be larger than that of the second via hole 14, that is, the orthographic projection of the edge of the second via hole 14 on the substrate base plate 1 is located in the orthographic projection of the short-circuit metal layer 5 on the substrate base plate 1, so that when micro-current is input to the short-circuit metal layer 5, the short-circuit metal layer 5 and the first electrode layer 3 can be ensured to be uniformly short-circuited and heated. The short-circuit metal lead 51 is arranged above the short-circuit metal layer 5 and extends along the horizontal direction, and one side of the short-circuit metal layer 5 close to the short-circuit metal lead 51 is connected with the short-circuit metal lead 51 through a lead; the scanning line 6 is disposed below the short-circuit metal layer 5.
The second electrode layer 12 includes a first electrode portion 121 and a second electrode portion 122; the first electrode part 121 is arranged in parallel with the scanning line 6, and one end of the first electrode part 121 is connected with the micro light emitting diode 10; the second electrode portion 122 is disposed perpendicular to the scanning line 6, one end of the second electrode portion 122 is connected to the other end of the first electrode portion 121, and the other end of the second electrode portion 122 is connected to the scanning line 6. In this case, even if a micro light emitting diode 10 on the display panel has a defect such as poor light emission, a dead spot, or a short circuit due to misalignment, the structure of the second electrode layer 12 is configured to allow the corresponding second electrode layer 12 to be cut by laser cutting or the like without affecting the light emission display of other micro light emitting diodes 10, and the cutting of the second electrode layer 12 does not affect other structures.
Optionally, a fifth via 15 is disposed on the third insulating layer 11, and the other end of the second electrode portion 122 is connected to the scan line 6 through the fifth via 15. The scanning line 6, the short-circuit metal lead 51 and the short-circuit metal layer 5 are disposed in the same layer, so that the scanning line 6, the short-circuit metal lead 51 and the short-circuit metal layer 5 can be formed through a one-step patterning process.
In some embodiments, as shown in fig. 4, the display panel further includes a data line 31. The data line 31 is vertically insulated and crossed with the scanning line 6 and the short-circuit metal lead 51 on the substrate 1, and the data line 31 is connected with the first electrode layer 3, so that a first electrode signal can be input into the first electrode layer 3 through the data line 31. The data line 31 is disposed in the same layer as the first electrode layer 3, so that the data line 31 and the first electrode layer 3 can be formed through a single patterning process.
Alternatively, as shown in fig. 4, the data line 31 extends in the vertical direction and is perpendicular to the scan line 6 and the short-circuit metal lead 51, and the data line 31 passes through the center of the first electrode layer 3 and is connected to the first electrode layer 3.
Optionally, in the above embodiment, the substrate base plate 1 includes a plurality of scan lines 6, data lines 31, and short-circuit metal leads 51. As shown in fig. 6, a plurality of scan lines 6 and a plurality of data lines 31 form a plurality of display units on the substrate 1, each of which includes a first electrode layer 3, a second electrode layer 12, a short-circuit metal layer 5, and a micro light emitting diode 10. Optionally, the display panel is further provided with a first driving unit and a second driving unit; the first driving unit is connected with the data line 31 and is used for inputting a first electrode signal to the first electrode layer 3 through the data line 31; the second driving unit is connected to the scan line 6 and the short metal lead 51, and is configured to input a second electrode signal to the second electrode layer 12 through the scan line 6 and input a micro current to the short metal layer 5 through the short metal lead 51.
Optionally, the first driving unit and the second driving unit may be both IC chips. Optionally, the second driving unit may further include a Gate Drive ON Array (GOA) circuit, and the Gate driving circuit inputs a driving signal to the Gate driving circuit through the IC chip, and outputs the second electrode signal and the micro-current based ON the driving signal input by the IC chip.
Optionally, the magnitude of the micro current input to the short circuit metal layer 5 through the short circuit metal lead 51 is 100nA to 5 μ a.
In some embodiments, as shown in fig. 2, the display panel further includes a second insulating layer 2 and a third insulating layer 11. Wherein, the second insulating layer 2 is arranged between the substrate base plate 1 and the first electrode layer 3; the third insulating layer 11 is disposed between the short-circuit metal layer 5 and the second electrode layer 12, and is used for insulating the scan line 6, the short-circuit metal lead 51, and the short-circuit metal layer 5 from the second electrode layer 12.
In some embodiments, as shown in fig. 2 and fig. 3, the connection pad is provided with a first bonding metal unit 8, a side of the micro light emitting diode 10 facing the substrate base plate 1 is provided with a second bonding metal unit 9, and the first bonding metal unit 8 is in bonding connection with the second bonding metal unit 9. Optionally, the first bonding metal unit 8 and the second bonding metal unit 9 are both bonding metals, and the bonding metals may be metallic tin (Sn) or a tin alloy.
In the present embodiment, when the micro light emitting diode 10 provided with the second bonding metal unit 9 is placed on the bonding sacrificial layer 7, even if the second bonding metal unit 9 is not precisely aligned with the first bonding metal unit 8 provided on the connection pad, if a micro current is applied to the short circuit metal layer 5 to short-circuit and heat the connection portion of the short circuit metal layer 5 and the first electrode layer 3, so that the bonding sacrificial layer 7 gradually evaporates or solidifies from the edge to the center, the micro light emitting diode 10 provided with the second bonding metal unit 9 is pushed down to the upper side of the first bonding metal unit 8 by the surface tension or viscous force of the bonding sacrificial layer 7 and temporarily and actively connected, and then the electric quantity of the micro current is increased and a certain pressure is applied to the upper side of the micro light emitting diode 10, so that an eutectic bond is generated between the first bonding metal unit 8 and the second bonding metal unit 9, and finally the rigid connection of the micro light emitting diode 10 on the first electrode layer 3 is realized.
Optionally, as shown in fig. 2 and fig. 3, the first electrode layer 3 is provided with a third via hole, and the first bonding metal unit 8 is disposed in the third via hole; meanwhile, the distance between the surface, far away from the substrate base plate 1, of the first bonding metal unit 8 and the substrate base plate 1 is the same as the distance between the surface, far away from the substrate base plate 1, of the first electrode layer 3 and the substrate base plate 1, so that the surface, far away from the substrate base plate 1, of the first bonding metal unit 8 is flush with the surface, far away from the substrate base plate 1, of the first electrode layer 3, and the situation that the micro light-emitting diode 10 cannot move to a corresponding position due to the fact that the first bonding metal unit 8 protrudes to cause the micro light-emitting diode 10 to be blocked in the moving process is avoided.
Optionally, a fourth via hole for accommodating the first bonding metal unit 8 may also be correspondingly disposed on the second insulating layer 2, so as to ensure the thickness of the first bonding metal unit 8, and enable the first bonding metal unit 8 to meet the requirement of bonding connection with the second bonding metal unit 9.
Optionally, in the above embodiment, the first via hole 13 is a circular hole, so as to ensure that a connection portion of the short circuit metal layer 5 and the first electrode layer 3 is an annular structure, so that heat generated by the annular structure during short circuit heating can be uniformly transferred from the edge to the center, and thus the micro light emitting diode 10 can be connected to the connection pad located at the center of the first via hole 13. The first via 13 may also be rectangular, square, or other shapes if necessary, and this embodiment does not limit this.
Based on the same inventive concept, the embodiment of the present disclosure further provides a manufacturing method of a display panel, which is used for implementing the manufacturing of the display panel in the above embodiments. As shown in fig. 7, the method includes:
in step S101, a substrate is provided.
Step S102, a first electrode layer is formed on the substrate base plate, and the first electrode layer includes a connection pad. Wherein the connection pad is used for connecting the first electrode layer 3 with the micro light emitting diode 10.
Optionally, the substrate 1 further includes a data line 31 disposed on the same layer as the first electrode layer 3, and the data line 31 is connected to the first electrode layer 3 and is used for inputting a first electrode signal to the first electrode layer 3.
Therefore, step S102 further includes: a first metal film layer is formed on the substrate base plate 1, and a pattern including the first electrode layer 3 and the data line 31 is formed through a one-time composition process.
The first metal film layer may be formed on the substrate base plate 1 by deposition, coating, sputtering, and the like, and then a pattern including the first electrode layer 3 and the data line 31 may be formed through the process steps of photoresist coating, exposure, development, etching, photoresist stripping, and the like.
In some embodiments, the connection pad is provided with a first bond metal unit 8, the first bond metal unit 8 being adapted to be bonded to a second bond metal unit 9 on the micro light emitting diode 10.
Optionally, between step S102 and step S103, the method further includes: a first insulating layer 4 is formed on the first electrode layer 3. The first insulating layer 4 comprises a second via hole 14 concentrically arranged with the first via hole 13, and an orthographic projection of the first via hole 13 on the substrate base plate 1 is located within an orthographic projection of the second via hole 14 on the substrate base plate 1, i.e. the first via hole 13 is smaller than the second via hole 14, so that the short-circuit metal layer 5 can be connected with the first electrode layer 3 at the edge of the first via hole 13.
The first insulating material film layer may be formed on the first electrode layer 3 by deposition, coating, sputtering, and the like, and then the first insulating layer 4 may be patterned by patterning process steps such as photoresist coating, exposure, development, etching, and photoresist stripping.
Step S103, forming a short circuit metal layer on the first electrode layer, wherein the short circuit metal layer comprises a first via hole with the connecting pad as the center, and the short circuit metal layer is connected with the first electrode layer through the first via hole.
Specifically, the short-circuit metal layer 5 is connected to the first electrode layer 3 at the edge of the first via hole 13, and the short-circuit metal layer is insulated from the first electrode layer at the non-edge of the first via hole.
Optionally, the display panel further includes a scan line 6 and a short-circuit metal lead 51 disposed on the same layer as the short-circuit metal layer 5, so step S103 further includes: and forming a second metal film layer on the first insulating layer 4, and forming a pattern comprising a short-circuit metal layer 5, a scanning line 6 and a short-circuit metal lead 51 by a one-time composition process.
In this embodiment, a second metal film layer may be formed on the first insulating layer 4 by deposition, coating, sputtering, and the like, and then the patterns of the short-circuit metal layer 5, the scan line 6, and the short-circuit metal lead 51 may be formed by patterning process steps such as photoresist coating, exposure, development, etching, and photoresist stripping.
And step S104, forming a bonding sacrificial layer in the first through hole, wherein the bonding sacrificial layer takes the connecting pad as a center.
Alternatively, the bonding sacrificial layer 7 may be a water vapor layer. The substrate including the short-circuit metal layer 5 can be cooled to the freezing point temperature, so that a layer of vapor layer can be condensed in the first through hole, namely in the bonding region, and then the micro light-emitting diode can be pre-adhered and placed in the bonding region by using the surface tension of the vapor layer. Wherein the amount of water vapor can be controlled by temperature.
Alternatively, the bonding sacrificial layer 7 may be a thermosetting material layer. Since the thermosetting material layer has a certain viscosity before curing, the micro light emitting diode can be pre-adhered and placed in the bonding region by using the viscosity force of the thermosetting material layer. The bonding sacrificial layer 7 may be made of unsaturated polyester resin (UF), epoxy resin (EP), silicone resin (SI), Polyurethane (PU), fluorine resin, or ORG layer.
And step S105, transferring the micro light-emitting diode to the region where the bonding sacrificial layer is located, and enabling the micro light-emitting diode to be suspended on the surface, far away from the substrate, of the bonding sacrificial layer.
The micro light emitting diode 10 is a vertical structure and includes a light emitting layer, and a first electrode and a second electrode located on two sides of the light emitting layer, wherein the first electrode, the light emitting layer, and the second electrode are sequentially disposed along a direction away from the substrate base plate 1.
Fig. 8 is a schematic diagram illustrating a transfer process of a micro light emitting diode according to an embodiment of the disclosure. As shown in fig. a, a Transfer head (Transfer head) on a Transfer head Substrate (Transfer head Substrate) is aligned with a micro light emitting diode on a Carrier Substrate (Carrier Substrate); as shown in fig. b, the transfer head adsorbs the micro light emitting diode by means of organic adhesion, electrostatic adsorption, vacuum adsorption, etc.; as shown in fig. c, the micro-leds are picked up by the transfer head; as shown in fig. d, the micro light emitting diode is aligned with the bonding region; as shown in fig. e, the micro light emitting diode is bonded with the first bonding metal unit 8 on the bonding region through the second bonding metal unit 9; as shown in fig. f, the transfer head is separated from the micro light emitting diode by means of glue release, electrostatic discharge, vacuum discharge, etc.
In the above steps, even if the micro light emitting diode is aligned by the transfer head in fig. a and the micro light emitting diode is aligned with the bonding region in fig. d, the micro light emitting diode can be ensured to fall on the bonding sacrificial layer 7 of the bonding region.
And S106, controlling the short circuit metal layer to heat the bonding sacrificial layer so as to change the phase state of the bonding sacrificial layer, enabling the micro light-emitting diode to move to the center of the bonding sacrificial layer, and enabling the first electrode of the micro light-emitting diode to be connected with the connecting pad.
Optionally, the bonding sacrificial layer includes a water vapor layer or a thermosetting material film layer; in step S106, the step of controlling the short circuit metal layer to heat the bonding sacrificial layer to change the phase state of the bonding sacrificial layer, so that the micro light emitting diode moves to the center of the bonding sacrificial layer, and the first electrode of the micro light emitting diode 10 is connected to the connection pad includes: and applying micro current to the short circuit metal layer to enable the connection part of the short circuit metal layer and the first electrode layer to generate heat so as to heat the edge of the bonding sacrificial layer, and gradually evaporating or solidifying the bonding sacrificial layer from the edge to the center so as to enable the micro light-emitting diode to move to the connection pad to be connected with the connection pad.
Specifically, when the bonding sacrificial layer is a water vapor layer, step S106 specifically includes: and applying micro-current to the short circuit metal layer to enable the joint of the short circuit metal layer and the first electrode layer to generate heat so as to heat the water vapor layer, gradually evaporating the water vapor layer from the edge to the center to change the surface tension of the water vapor layer, controlling the micro light-emitting diode to move to the connecting pad according to the surface tension, and enabling the first electrode to be in active connection with the connecting pad.
When the bonding sacrificial layer is a thermosetting material film layer, step S106 specifically includes: and applying micro current to the short circuit metal layer to enable the joint of the short circuit metal layer and the first electrode layer to generate heat so as to heat the thermosetting material film layer, enabling the thermosetting material film layer to be gradually cured from the edge to the center to change the viscosity force of the thermosetting material film layer, controlling the micro light-emitting diode to move to the connecting pad according to the viscosity force and enabling the first electrode to be in active connection with the connecting pad.
In the embodiment, a micro-current of 100nA to 5 mua is input to the short-circuit metal layer 5 through the short-circuit metal lead 51, so that the connection part of the short-circuit metal layer 5 and the first electrode layer 3 is short-circuited and generates heat, and the heat is gradually transferred inwards from the connection part of the short-circuit metal layer 5 and the first electrode layer 3; during the process of heat conduction, the bonding sacrificial layer 7 gradually evaporates or solidifies along the direction of heat conduction, that is, the bonding sacrificial layer 7 gradually evaporates or solidifies from edge to center, during the evaporation or solidification, the micro light emitting diode 10 suspended on the surface of the bonding sacrificial layer 7 is pushed into the center of the bonding region by the action of surface tension or viscous force of the bonding sacrificial layer 7, so that the second bonding metal unit 9 disposed on the micro light emitting diode is aligned and temporarily and actively connected with the first bonding metal unit 8 at the connection pad, and then the electric quantity of the micro current is increased and a certain pressure is applied above the micro light emitting diode 10, so that a eutectic bond is generated between the first bonding metal unit 8 and the second bonding metal unit 9, and finally a rigid connection of the micro light emitting diode 10 on the first electrode layer 3 is realized.
Step S107, forming a second electrode layer electrically connected to the second electrode of the micro light emitting diode.
Optionally, before step S107, the method further includes: a third insulating layer 11 is formed on the micro light emitting diode 10. The third insulating layer 11 includes a fifth via hole 15 and a sixth via hole, the fifth via hole 15 is used to connect the second electrode layer 12 with the scan line 6, and the sixth via hole is used to connect the second electrode layer 12 with the micro light emitting diode 10.
According to the manufacturing method of the display panel, on the premise that the Mask number is not increased, the problem of deviation of alignment precision of the micro light-emitting diode caused by the prior transfer technology is effectively solved, the bonding success rate is improved, and the subsequent display reject ratio caused by poor bonding precision is reduced; multiple accurate transfer of a single or combined multiple Micro light-emitting diodes can be realized through the bonding sacrificial layer and the independent anode and cathode wires of the Micro light-emitting diodes, and a technical basis is provided for the follow-up realization of Micro LED panel dead pixel repair and full-color display.
It should be noted that the above describes some embodiments of the disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments described above and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the present disclosure, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of brevity.
In addition, well-known power/ground connections to Integrated Circuit (IC) chips and other components may or may not be shown in the provided figures for simplicity of illustration and discussion, and so as not to obscure the embodiments of the disclosure. Furthermore, devices may be shown in block diagram form in order to avoid obscuring embodiments of the present disclosure, and this also takes into account the fact that specifics with respect to implementation of such block diagram devices are highly dependent upon the platform within which the embodiments of the present disclosure are to be implemented (i.e., specifics should be well within purview of one skilled in the art). Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the disclosure, it should be apparent to one skilled in the art that the embodiments of the disclosure can be practiced without, or with variation of, these specific details. Accordingly, the description is to be regarded as illustrative instead of restrictive.
While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art in light of the foregoing description. For example, other memory architectures (e.g., dynamic ram (dram)) may use the discussed embodiments.
The disclosed embodiments are intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalents, improvements, and the like that may be made within the spirit and principles of the embodiments of the disclosure are intended to be included within the scope of the disclosure.
Claims (12)
1. A display panel, comprising:
a substrate base plate;
the first electrode layer is arranged on the substrate base plate and comprises a connecting pad;
the short circuit metal layer is arranged on the first electrode layer and comprises a first through hole which takes the connecting pad as a center, and the short circuit metal layer is connected with the first electrode layer through the first through hole;
the micro light-emitting diode comprises a light-emitting layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on two sides of the light-emitting layer;
and a second electrode layer electrically connected to the second electrode.
2. The display panel according to claim 1, further comprising:
the first insulating layer is arranged between the first electrode layer and the short circuit metal layer and comprises a second through hole concentrically arranged with the first through hole, and the orthographic projection of the first through hole on the substrate base plate is positioned in the orthographic projection of the second through hole on the substrate base plate.
3. The display panel according to claim 1, further comprising:
a scan line connected to the second electrode layer;
a short circuit metal lead connected with the short circuit metal layer;
the scanning lines, the short circuit metal leads and the short circuit metal layer are arranged on the same layer.
4. The display panel according to claim 3, further comprising:
and the data line is vertically insulated and crossed with the scanning line and the short-circuit metal lead wire on the substrate base plate, is connected with the first electrode layer and is arranged on the same layer as the first electrode layer.
5. The display panel according to claim 2, further comprising:
a second insulating layer disposed between the substrate base plate and the first electrode layer;
and the third insulating layer is arranged between the short circuit metal layer and the second electrode layer.
6. The display panel according to claim 1, wherein the connection pad is provided with a first bonding metal unit, a side of the micro light emitting diode facing the substrate is provided with a second bonding metal unit, and the first bonding metal unit is bonded and connected with the second bonding metal unit.
7. The display panel according to claim 6, wherein the first electrode layer is provided with a third via hole, and the first bonding metal unit is disposed in the third via hole; the distance between one surface, far away from the substrate base plate, of the first bonding metal unit and the substrate base plate is the same as the distance between one surface, far away from the substrate base plate, of the first electrode layer and the substrate base plate.
8. The display panel according to claim 1, wherein the first via hole is a circular hole.
9. The display panel according to any one of claims 3 to 8, wherein the second electrode layer comprises:
the first electrode part is parallel to the scanning line, and one end of the first electrode part is connected with the micro light-emitting diode;
and the second electrode part is vertical to the scanning line, one end of the second electrode part is connected with the other end of the first electrode part, and the other end of the second electrode part is connected with the scanning line.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 9.
11. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a substrate base plate;
forming a first electrode layer on the substrate base plate, wherein the first electrode layer comprises a connecting pad;
forming a short circuit metal layer on the first electrode layer, wherein the short circuit metal layer comprises a first through hole which takes the connecting pad as a center, and the short circuit metal layer is connected with the first electrode layer through the first through hole;
forming a bonding sacrificial layer in the first through hole, wherein the bonding sacrificial layer takes the connecting pad as a center;
transferring the micro light-emitting diode to the region where the bonding sacrificial layer is located and enabling the micro light-emitting diode to be suspended on the surface, far away from the substrate, of the bonding sacrificial layer;
controlling the short circuit metal layer to heat the bonding sacrificial layer so as to change the phase state of the bonding sacrificial layer, so that the micro light-emitting diode moves to the center of the bonding sacrificial layer, and a first electrode of the micro light-emitting diode is connected with the connecting pad;
and forming a second electrode layer which is electrically connected with the second electrode of the micro light-emitting diode.
12. The method of claim 11, wherein the bonding sacrificial layer comprises a layer of water vapor or a layer of a thermoset material film;
the controlling the short circuit metal layer to heat the bonding sacrificial layer to change the phase state of the bonding sacrificial layer, so that the micro light emitting diode moves to the center of the bonding sacrificial layer, and the first electrode of the micro light emitting diode is connected with the connection pad, and the method includes:
and applying micro current to the short circuit metal layer to enable the connection part of the short circuit metal layer and the first electrode layer to generate heat so as to heat the bonding sacrificial layer, and gradually evaporating or curing the bonding sacrificial layer from the edge to the center so as to enable the micro light-emitting diode to move to the connection pad and enable the first electrode to be connected with the connection pad.
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| WO2023236537A1 (en) * | 2022-06-06 | 2023-12-14 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip assembly, display panel, display apparatus, and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023236537A1 (en) * | 2022-06-06 | 2023-12-14 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip assembly, display panel, display apparatus, and preparation method |
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