CN109950194B - Chip transfer substrate and chip transfer method - Google Patents
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- CN109950194B CN109950194B CN201910288125.1A CN201910288125A CN109950194B CN 109950194 B CN109950194 B CN 109950194B CN 201910288125 A CN201910288125 A CN 201910288125A CN 109950194 B CN109950194 B CN 109950194B
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- 238000012546 transfer Methods 0.000 title claims abstract description 272
- 239000000758 substrate Substances 0.000 title claims abstract description 226
- 238000000034 method Methods 0.000 title claims abstract description 120
- 238000004806 packaging method and process Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 25
- 229920006302 stretch film Polymers 0.000 claims description 8
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 230000008602 contraction Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 129
- 230000008569 process Effects 0.000 description 51
- 238000010586 diagram Methods 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 22
- 238000012545 processing Methods 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 9
- 229920001971 elastomer Polymers 0.000 description 8
- 239000000806 elastomer Substances 0.000 description 8
- 229920002595 Dielectric elastomer Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001746 electroactive polymer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The embodiment of the invention discloses a chip transfer substrate and a chip transfer method. The chip transfer substrate includes: the chip packaging structure comprises a first substrate layer, chip bases and a telescopic film layer, wherein the chip bases are arranged on the first substrate layer; and the telescopic film layer is used for generating tensile deformation when the first operation is executed and generating contractive deformation when the second operation is executed. The embodiment of the invention solves the problem that the efficiency, the yield and the transfer precision of transferring a chip in a large amount in the existing micro-component manufacturing process are difficult to meet the micro-component manufacturing requirement.
Description
Technical Field
The present application relates to, but not limited to, the field of display technology and semiconductor process technology, and more particularly, to a chip transfer substrate and a chip transfer method.
Background
With the development of display technology, the manufacturing process of micro-components becomes a development trend of display panels, such as micro Light Emitting Diode (LED) (i.e. micro-LED) technology.
In the fabrication of microcomponents, the microcomponents are first formed on a donor substrate and then transferred to a receiving substrate. Based on the current process manufacturing basis, the manufacture of Thin Film Transistor (TFT) arrays, Mirco-LED chips and drive Integrated Circuit (IC) chips has a relatively mature process mode; however, the enormous volume transfer of the Mirco-LED chips is a difficulty in the fabrication process. Since Micro-LED chips are very tiny, huge transfer of the Micro-LED chips requires very high efficiency, yield and transfer precision, so that the huge transfer technology becomes the biggest technical difficulty in the manufacturing process of the Mirco-LED panel, and the popularization and the use of the Mirco-LED technology are hindered.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention provide a chip transfer substrate and a chip transfer method, so as to solve the problem that efficiency, yield, and transfer precision of transferring a chip in a large amount in the existing micro component manufacturing process are difficult to meet the micro component manufacturing requirements.
The embodiment of the invention provides a chip transfer substrate, which comprises: the chip packaging structure comprises a first substrate layer, chip bases and a telescopic film layer, wherein the chip bases are arranged on the first substrate layer;
the telescopic film layer is used for generating stretching deformation when the first operation is executed and generating contraction deformation when the second operation is executed.
Optionally, in the chip transfer substrate as described above, the light emitting diode chips are disposed on the chip mounts in a one-to-one correspondence.
Alternatively, in the chip transfer substrate as described above,
the telescopic film layer is arranged between the adjacent chip bases arranged in the first direction and arranged between the adjacent chip bases arranged in the second direction; the second direction is perpendicular to the first direction.
Optionally, in the above chip transfer substrate, the stretchable film layer includes a first electrode layer and a second electrode layer that are disposed opposite to each other, and an elastic film layer that is disposed between the first electrode layer and the second electrode layer, where the stretchable film layer generates a stretching deformation and a shrinking deformation, and includes:
the telescopic film layer is used for generating stretching deformation when a first voltage is applied between the first electrode layer and the second electrode layer, and generating contraction deformation when a second voltage is applied between the first electrode layer and the second electrode layer.
Optionally, in the chip transfer substrate as described above, the amount of tensile deformation of the stretchable film layer is equal to the amount of shrinkage deformation.
Optionally, in the chip transfer substrate as described above, the material of the stretchable film layer is silicone resin or acrylic resin.
Optionally, in the chip transfer substrate as described above, both the first base layer and the stretchable film layer are made of flexible materials.
Optionally, in the chip transfer substrate as described above, the chip pad array is arranged on the first base layer; or,
the chip bases in the odd-numbered rows and the chip bases in the even-numbered rows are arranged in a crossed manner in a first direction, and the chip bases in the odd-numbered rows and the chip bases in the even-numbered rows are arranged in a crossed manner in a second direction.
An embodiment of the present invention further provides a chip transfer method, which is performed by the chip transfer substrate according to any one of the above embodiments, and the method includes:
executing a first operation on a telescopic film layer in the chip transfer substrate to enable the telescopic film layer arranged between adjacent chip bases to generate tensile deformation;
forming a chip to be transferred on a chip base of the chip transfer substrate;
and executing a second operation on the telescopic film layer to ensure that the telescopic film layer arranged between the adjacent chip bases generates the contracted deformation.
Optionally, in the chip transferring method as described above, the forming a chip to be transferred on the chip mount includes:
depositing a chip on each of the chip mounts.
Optionally, in the chip transferring method as described above, the forming a chip to be transferred on the chip mount includes:
aligning a second substrate with chips and the chip transfer substrate, wherein the chips in the second substrate correspond to the chip bases in the chip transfer substrate one by one;
transferring the chips in the second substrate to corresponding chip bases;
and stripping the second substrate.
Optionally, in the chip transfer method as described above, the stretchable film layer includes a first electrode layer and a second electrode layer that are oppositely disposed, and an elastic film layer that is disposed between the first electrode layer and the second electrode layer, and the performing a first operation includes:
applying a first voltage between the first electrode layer and the second electrode layer;
the performing a second operation comprising:
a second voltage is applied between the first electrode layer and the second electrode layer.
Optionally, in the chip transfer method as described above, after the performing the second operation on the stretch film layer, the method further includes:
aligning the chip transfer substrate with a receiving substrate, and transferring the chips in the chip transfer substrate to the receiving substrate;
and stripping the chip transfer substrate.
The chip transfer substrate and the chip transfer method provided by the embodiment of the invention comprise a first base layer, chip bases arranged on the first base layer and a telescopic film layer arranged between adjacent chip bases 120; the telescopic film layer is used for generating tensile deformation when the first operation is executed and generating contractive deformation when the second operation is executed. By adopting the chip transfer substrate provided by the embodiment of the invention, the chips can be directly deposited on the chip base of the chip transfer substrate in the state that the telescopic film layer generates tensile deformation, or the huge amount of the chips in the donor substrate can be transferred onto the chip transfer substrate through the joint of the chip transfer substrate and the donor substrate, and the telescopic film layer can generate shrinkage deformation to recover to the initial state after the huge amount of the chips are formed on the chip transfer substrate, so that the distance between adjacent chips can be reduced to a great extent, namely, the process precision for forming a large number of chips is improved to a great extent, and the transfer precision and the transfer efficiency of the huge amount of the chips are improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a schematic diagram of a prior art process for performing a transfer mode of chip transfer;
FIG. 2 is a schematic diagram of another transfer method of chip transfer using the prior art;
fig. 3 is a schematic structural diagram of a chip transfer substrate according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a chip transfer substrate provided in the embodiment shown in FIG. 3;
fig. 5 is a schematic diagram illustrating the chip transfer substrate shown in fig. 3 after stretching deformation of the stretchable film layer;
FIG. 6 is a schematic diagram of a chip transfer substrate with a chip formed thereon according to the embodiment shown in FIG. 3;
FIG. 7 is a schematic view of another structure of the chip transfer substrate shown in FIG. 3 with a chip formed thereon;
fig. 8 is a schematic structural diagram of another chip transfer substrate according to an embodiment of the present invention;
fig. 9 is a flowchart of a chip transfer method according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a portion of a process step in a process of a chip transfer method according to an embodiment of the invention;
FIG. 11 is a schematic diagram of another part of the processing steps in the process of the chip transfer method according to the embodiment shown in FIG. 10;
FIG. 12 is a cross-sectional view of a process of the chip transfer method shown in FIGS. 10 and 11;
FIG. 13 is a flow chart of another chip transfer method according to an embodiment of the present invention;
fig. 14 is a schematic diagram of a part of a process step in another process of the chip transfer method according to the embodiment of the invention;
FIG. 15 is a schematic diagram of another part of the processing steps in the process of the chip transfer method according to the embodiment shown in FIG. 14;
fig. 16 is a cross-sectional view of a process of the chip transfer method shown in fig. 14 and 15.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
In addition to Liquid Crystal Display (LCD) technology, the current Display technology develops self-luminous Organic Light-Emitting Diode (OLED) technology and micro-LED technology rapidly, and is a great substitute for LCD. The Micro-LED technology is a display technology which is used for carrying out microminiaturization and matrixing on a traditional structure and manufacturing a driving circuit by adopting an integrated circuit process to realize addressing control and independent driving of each pixel point. Since various indexes such as brightness, life, contrast, reaction time, power consumption, viewing angle, and resolution of the technology are superior to those of the LCD technology and the OLED technology, and the Micro-LED technology has advantages of self-luminescence, simple structure, small volume, and energy saving, etc., it has been considered as a next-generation display technology by many display panel manufacturers to start active layout.
The above background art has demonstrated that the first technical difficulty to be solved by Micro-LED technology is the huge transfer of chips. In order to achieve the high resolution of Micro-LED displays, the die (e.g., Micro-LED chip) must be made very small, e.g., 100 micrometers (um), and the difficulty is thought to be in soldering such small electronic devices while maintaining the millions of levels of efficiency. Conventional bulk transfer is by way of substrate bonding to transfer the micro-components from the transfer substrate to the receiving substrate. Two transfer methods in the prior art are illustrated below.
The first transfer method is direct transfer, and fig. 1 is a schematic diagram of a process of a transfer mode for performing chip transfer by using the prior art. As shown in fig. 1, a direct transfer process is illustrated, in which a transfer substrate (i.e., a donor substrate) is first directly bonded to a receiving substrate, and then the micro-component array is transferred from the transfer substrate to the receiving substrate, and then the transfer substrate is removed.
The second transfer method is indirect transfer, and fig. 2 is a schematic diagram of a process of another transfer method for performing chip transfer according to the prior art. As shown in fig. 2, an indirect transfer process is illustrated, which includes two substrate bonding and peeling steps, first, bonding a transfer substrate to a donor substrate to extract a micro-component array from the donor substrate, then bonding the transfer substrate to a receiving substrate to transfer the micro-component array to the receiving substrate, and finally, removing the transfer substrate. In the process shown in fig. 2, the extraction of the micro-component array can be performed by means of electrostatic pick-up, in which an array of transfer heads can be used.
The precision of the bulk transfer of the two existing chips is not high, and the spacing between adjacent chips is defined as the precision of the bulk transfer, and the precision of the existing transfer is usually 20 um. Therefore, the embodiment of the invention provides a high-precision chip batch transfer scheme to improve the precision of chip batch transfer, thereby realizing the process requirement of the Mirco-LED technology on chip mass transfer.
The following specific embodiments of the present invention may be combined, and the same or similar concepts or processes may not be described in detail in some embodiments.
Fig. 3 is a schematic structural diagram of a chip transfer substrate according to an embodiment of the present invention, fig. 3 is a top view of the chip transfer substrate 100, and fig. 4 is a cross-sectional view of the chip transfer substrate according to the embodiment shown in fig. 3. The chip transfer substrate 100 provided in the present embodiment may include: the chip package includes a first substrate layer 110, chip pads 120 arranged on the first substrate layer 110, and a stretchable film layer 130 disposed between adjacent chip pads 120.
In the chip transfer substrate 100 according to the embodiment of the invention, the stretchable film layer 130 is configured to generate a stretching deformation when the first operation is performed and generate a shrinking deformation when the second operation is performed.
The chip transfer substrate 100 according to the embodiment of the present invention may be used as a donor substrate or a transfer substrate in a batch transfer process of chips to integrally transfer a large number of chips. Referring to fig. 3 and 4, a chip transfer substrate 100 is shown, wherein a plurality of chip mounts 120 for forming a plurality of chips are arranged on a first substrate layer 110, the chip mounts 120 and the chips to be formed in the later process are in a one-to-one correspondence relationship, that is, the number and arrangement of the chip mounts 120 and the chips to be formed are the same.
In the embodiment of the present invention, a stretchable film 130 is disposed between adjacent chip mounts 120, and the stretchable film 130 is formed of a material having an elastic stretch property. The elastic flexibility of the stretchable film 130 makes it have the following deformation characteristics: the first operation on the stretchable film 130 may cause the stretchable film 130 to generate a stretching deformation, and the second operation on the stretchable film 130 may cause the stretchable film 130 to generate a shrinking deformation. Based on the above deformation characteristics of the stretchable film layer 130, the first operation is performed on the stretchable film layer 130 in the chip transfer substrate 100, so that the distance between any adjacent chip mounts 120 is increased, the array of chip mounts 120 illustrated in fig. 3 is arranged on the first substrate layer 110, and the stretchable film layer 130 illustrated in fig. 3 is not yet deformed and is in an initial state.
Due to the stretching deformation of the stretch film layer 130, the distance between the adjacent chip mounts 120 is increased, including: an increase in the spacing between adjacent die paddles 120 in the X direction, and an increase in the spacing between adjacent die paddles 120 in the Y direction. As shown in fig. 5, which is a schematic diagram of the chip transfer substrate after the stretching deformation of the stretchable film layer in the chip transfer substrate provided in the embodiment shown in fig. 3, it can be seen from comparing fig. 3 and fig. 5 that the distance between the adjacent chip mounts 120 (i.e., the stretchable film layer 130) in the chip transfer substrate 100 shown in fig. 5 is uniformly increased, at this time, the distance between the adjacent chip mounts 120 in the chip transfer substrate 100 is the process precision that can be realized by the prior art, or the distance is the transfer precision that can be realized by the chip bulk transfer technology. Therefore, the chip transfer substrate 100 in this state (the stretchable film layer 130 is in the state of stretching deformation) may be subjected to chip deposition or chip bulk transfer, that is, the chip 140 on the chip base 120 is formed under the precision condition which can be achieved by the current process, as shown in fig. 6, which is a schematic structural diagram of the chip formed on the chip transfer substrate provided in the embodiment shown in fig. 3, and actually, fig. 6 is a schematic structural diagram of the chip 140 formed in the form of the chip transfer substrate 100 shown in fig. 5.
In the embodiment of the present invention, in the chip transfer substrate 100 on which the chips 140 are formed, the pitch between adjacent chip mounts 120 (or adjacent chips 140) is the transfer precision of the bulk transfer in the prior art, for example, 20um, and the transfer precision cannot meet the requirement of the bulk transfer on the precision in the fabrication process of some micro devices. Aiming at the problem of poor transfer precision in the prior art, the deformation characteristic of the telescopic film layer 130 is combined, and the second operation can be performed on the telescopic film layer 130 in the stretching deformation state, so that the distance between any adjacent chip bases 120 is reduced. Similar to the above-described telescopic deformation, the distance between the adjacent chip mounts 120 is reduced, including: a decrease in the pitch of adjacent die paddles 120 in the X direction, and a decrease in the pitch of adjacent die paddles 120 in the Y direction. After the second operation is performed, the size and shape of the stretch film layer 130 and the chip transfer substrate 100 are restored to the initial state, at this time, the chip transfer substrate 100 has the formed chip 140 thereon (the chip 140 may be directly deposited on the chip base 120 of the chip transfer substrate 100, or may be transferred onto the chip transfer substrate 100 through the bonding of the chip transfer substrate 100 and the donor substrate), and at this time, the distance between adjacent chips 140 is smaller, for example, less than or equal to 15um, as shown in fig. 7, another structural diagram of the chip formed on the chip transfer substrate provided for the embodiment shown in fig. 3 is provided, and the stretch film layer 130 in the chip transfer substrate 100 shown in fig. 7 has been restored to the initial state through the deformation of shrinkage. That is, by using the deformation characteristic of the stretchable film layer 130 in the chip transfer substrate 100, the embodiment of the invention can greatly reduce the distance between adjacent chips 140, that is, greatly improve the precision of forming a large number of chips 140, thereby improving the transfer precision and transfer efficiency of chip mass transfer.
The chip transfer substrate 100 according to the embodiment of the present invention includes a first substrate layer 110, chip bases 120 arranged on the first substrate layer 110, and a flexible film layer 130 disposed between adjacent chip bases 120; the telescopic film layer is used for generating tensile deformation when the first operation is executed and generating contractive deformation when the second operation is executed. By adopting the chip transfer substrate 100 provided by the embodiment of the invention, the chips 140 can be directly deposited on the chip base 120 of the chip transfer substrate 100 in the state that the telescopic film layer 130 generates tensile deformation, or the huge amount of the chips in the donor substrate can be transferred onto the chip transfer substrate 100 through the joint of the chip transfer substrate 100 and the donor substrate, and after the huge amount of the chips 140 are formed on the chip transfer substrate 100, the telescopic film layer 130 can generate shrinkage deformation to recover to the initial state, so that the distance between the adjacent chips 140 can be reduced to a great extent, namely, the process precision for forming the huge amount of the chips 140 is improved to a great extent, and the transfer precision and the transfer efficiency of the huge amount of the chips are improved.
Alternatively, the middle chip transfer substrate 100 according to the embodiment of the invention may be applied to a display technology, such as an LED chip serving as a backlight source in a display panel, or a Mirco-LED chip in a Mirco-LED panel, where the chips are disposed on the chip base 120 in a one-to-one correspondence manner as shown in the above embodiment. As shown in fig. 6 and 7, Red, Green and Blue (Red, Green and Blue, abbreviated as RGB) LED chips arranged in an array of chips 140 are exemplified.
Optionally, in the embodiment of the present invention, the stretching of the stretchable film layer 130 is usually stretching in the X direction and the Y direction, that is, the elastic film layer is squeezed in the film thickness direction to have an expanding stretching effect in the horizontal direction, in order to prevent the stretching performance of the stretchable film layer 130 in the horizontal direction from interfering with the chip bases 120, the stretchable film layer 130 is only disposed at a position between adjacent chip bases 120, referring to fig. 3 and 5, the stretchable film layer 130 is not disposed on the first substrate layer 110 except for the chip bases 120, and the stretchable film layer 130 may be disposed in a manner that: disposed between adjacent chip pads 120 arranged in a first direction (e.g., X direction) and disposed between adjacent chip pads arranged in a second direction (e.g., Y direction); and the second direction is perpendicular to the first direction. It can be seen that, in the telescopic film layer 130 arranged in the X direction, the length in the X direction is greater than the width in the Y direction, that is, in the X direction, the telescopic deformation of the telescopic film layer 130 in the X direction is mainly utilized, the telescopic deformation in the Y direction is smaller, and the distance between adjacent chip bases 120 is not greatly affected; similarly, in the Y direction, the stretching deformation of the stretching film layer 130 in the Y direction is mainly utilized. In addition, it can be seen that the stretchable film layer 130 is disposed in several directions, i.e., up, down, left, and right directions, of the chip base 120; if the side length of the chips 140 is large, so that the length of the distance between the adjacent chips 140 is difficult to satisfy the requirement that the length of the telescopic film 130 is larger than the width of the adjacent chips 140, the telescopic film 130 may be set in a segmented manner, for example, for the telescopic film 130 requiring a high telescopic requirement in the first direction, multiple segments may be set in the second direction, and the continuity of the telescopic film 130 in the first direction is maintained, as described with reference to fig. 3 to 7.
It should be noted that, in the embodiment of the present invention, the material of the stretchable film layer 130 may be selected from materials having electrostrictive properties, and the electrostrictive materials, especially polymer electrostrictive materials (also referred to as electroactive polymer materials), will be briefly described below.
The electrostrictive material can be divided into a ceramic electrostrictive material and a polymer electrostrictive material, and the strain and the driving pressure of the ceramic electrostrictive material are very limited, so that the ceramic electrostrictive material is not considered in the embodiment of the invention. In addition, advances in the research of the switching function of polymer electric machines have shown that thermoplastic polymer elastomers, especially segmented polyurethane elastomers, can exhibit very high electric field induced strain response, and polymer electrostrictive materials include polymer elastomers and dielectric elastomers.
The polymer elastomer shows great strain and driving pressure, especially some polymer irradiated by electron beam has strong electrostrictive strain, and the electrostrictive coefficient of the material is usually 10-18 orders of magnitude, so that high driving field strength is needed, but the breakdown field strength can exceed 1000MV/m, and the working field strength can reach 10 MV/m. Therefore, the maximum strain of the polymer electrostrictive material can be very large under very high field strength.
The dielectric elastomer is a polymer electrostrictive material which is most concerned by researchers at present, and has the characteristics of light weight, low price, low noise, high flexibility and plasticity and the like. Such materials are strained by Maxwell stress. The dielectric elastomer is in principle a parallel plate capacitor with an elastomer film between two parallel metal electrodes, resembling a sandwich structure. When a high-voltage direct-current voltage of kilovolt is applied to the two metal electrodes, the electrostatic attraction generated between the two electrodes extrudes the elastomer film in the film thickness direction to expand the elastomer film in the horizontal direction, and the elastomer film recovers the original shape after the voltage is turned off; electrostriction is the strain due to a change in the dielectric properties of a material. The electrical polarization is related to mechanical strain as follows:
in the above formula (1), Selectrictation represents the longitudinal strain caused by electrostriction, i.e., the strain in the film thickness direction, Q is the electrostriction coefficient, εoIs the vacuum dielectric constant εrIs the relative dielectric constant and E is the electric field strength.
Common dielectric elastomers include silicone and acrylic, for example, silicone of type CF1921-86, acrylic of type VHB4910, which can achieve drive strains of 117% and 215%, respectively. The driving stress of the two materials can reach 8 megapascals (MPa), the energy density is 3 joules per cubic centimeter (J/cm3), and the highest energy density can reach 3.4J/cm 3. Due to the low modulus and high breakdown field strength of the material, the maximum strain of the acrylic resin under a high electric field can reach 380%. The stretchable film 130 in the embodiment of the present invention may be made of the above-mentioned silicone resin or acrylic resin.
It is noted that, the common dielectric elastomer has a structure of two metal sides and an elastomer film in the middle, and thus, the stretchable film layer 130 in the embodiment of the present invention may include a first electrode layer and a second electrode layer that are oppositely disposed, and an elastic film layer disposed between the first electrode layer and the second electrode layer, and based on the structural characteristics of the stretchable film layer 130, the implementation manners of the stretchable film layer 130 to generate tensile deformation and the contractive deformation may include:
the stretchable film layer 130 is configured to be deformed by stretching when a first voltage is applied between the first electrode layer and the second electrode layer, and to be deformed by shrinking when a second voltage is applied between the first electrode layer and the second electrode layer.
In the embodiment of the present invention, based on the structural characteristics of the stretchable film layer 130, a first voltage may be applied to the stretchable film layer 130 through the first electrode layer and the second electrode layer thereof, so that the elastic film layer therein is stretched and deformed under the action of the voltage; that is to say, for the stretchable film layer 130 of the structure, the first operation is an operation of applying a first voltage, the first voltage applied may be a positive voltage or a negative voltage, and the magnitude of the first voltage applied may be determined according to parameters such as a type deformation amount required to generate a stretch shape, a process precision of forming a chip, and a driving strain of the elastic film layer. In addition, after the chip is formed on the chip transfer substrate 100, a second voltage, for example, 0 volt (V) may be applied to the first electrode layer and the second electrode layer of the stretchable film layer 130, and the operation of applying the second voltage is to turn off the applied first voltage, so that the elastic film layer is deformed to be contracted and then returns to the original state.
Optionally, in the embodiment of the present invention, in order to control the chip bulk transfer to have higher process precision, the deformation requirement of the stretchable film layer 130 is to have an elastic deformation capability, that is, the stretchable film layer can be restored to the initial state when subjected to a shrinking deformation after being stretched, that is, the stretching deformation amount is required to be equal to the shrinking deformation amount.
Alternatively, in the embodiment of the present invention, both the first base layer 110 and the flexible film layer 130 may be made of a flexible material, and the first base layer 110 is a flexible substrate, so that the chip transfer substrate 100 may be applied to a chip bulk transfer operation of a flexible display panel (e.g., a curved display panel).
Optionally, when the chip transfer substrate 100 in the embodiment of the present invention is applied to a manufacturing process of a micro component, the chip transfer substrate 100 may be used as a donor substrate in a direct transfer process, that is, after the stretching deformation of the stretchable film layer 130 is generated, a chip may be directly deposited on the chip base 120 of the chip transfer substrate 100; the chip transfer substrate 100 may also be used as a transfer substrate in an indirect transfer process, that is, after the stretching deformation of the stretch film layer 130 occurs, a huge number of chips are first transferred from the donor substrate to the chip transfer substrate 100 by the bonding of the chip transfer substrate 100 and the donor substrate. In any of the above-described methods, the stretchable film layer 130 in the stretched state is subjected to the second operation to be contracted and deformed, and then restored to the original state, and then, the chip transfer substrate 100 is bonded to the receiving substrate, so that a large number of chips in the chip transfer substrate 100 can be finally transferred to the receiving substrate.
Alternatively, in the embodiment of the present invention, the chip pads 120 (i.e., the chips 140 formed subsequently) on the first substrate layer 110 may be arranged in an array, as shown in fig. 3 to 7. The chip pads 120 on the first base layer 110 may also be arranged in other ways, as shown in fig. 8, which is a schematic structural view of another chip transfer substrate provided in the embodiment of the present invention, fig. 8 is a top view, in which the chip pads 120 in odd-numbered rows and the chip pads 120 in even-numbered rows are arranged in a first direction (for example, the X direction) in a crossed manner, and the chip pads 120 in odd-numbered columns and the chip pads 120 in even-numbered columns are arranged in a crossed manner in a second direction (for example, the Y direction) in a crossed manner in fig. 8.
It should be noted that the embodiments of the present invention do not limit the chip pad 120 to only several arrangement manners illustrated in the above embodiments, and the arrangement manner of the chip pads 120 in the chip transfer substrate 100 may be designed according to the manufacturing requirement of the micro component.
Based on the chip transfer substrate 100 provided in the above embodiment of the present invention, an embodiment of the present invention further provides a chip transfer method, the chip transfer method is applied to the chip transfer substrate 100 provided in any of the above embodiments of the present invention, the chip transfer substrate 100 can be applied as a donor substrate or a transfer substrate in the chip transfer method, as shown in fig. 9, which is a flowchart of the chip transfer method provided in the embodiment of the present invention, and the chip transfer method includes the following steps:
s210, performing a first operation on a telescopic film layer in the chip transfer substrate to enable the telescopic film layer arranged between adjacent chip bases to generate tensile deformation;
s220, forming a chip to be transferred on a chip base of the chip transfer substrate;
and S230, executing a second operation on the telescopic film layer, so that the telescopic film layer arranged between the adjacent chip bases generates the contracted deformation.
The chip transfer method provided by the embodiment of the present invention is an important process manner in the micro-component manufacturing process, that is, the bulk chip is transferred as a whole, and the chip transfer method can be implemented by using the chip transfer substrate 100 in any one of the implementations shown in fig. 3 to 8 as a donor substrate or a transfer substrate in the transfer process, wherein the specific structure of the chip transfer substrate 100, the material and the deformation characteristics of the stretchable film layer, and the application manner of the deformation characteristics in the chip transfer substrate 100 have been described in detail in the above embodiments, and therefore, no further description is given here.
The chip transferring method in the embodiment of the present invention is mainly applied to the deformation characteristic of the elastic film layer in the chip transferring substrate, that is, the first operation is performed on the stretchable film layer 130 in the chip transferring substrate to make the stretchable film layer 130 generate tensile deformation, so that the distance between any adjacent chip mounts 120 is increased, as shown in fig. 10, which is a schematic diagram of a part of process steps in a process of the chip transferring method provided in the embodiment of the present invention, fig. 11 is a schematic diagram of another part of process steps in a process of the chip transferring method provided in the embodiment of fig. 10, wherein fig. 10 illustrates a process of generating tensile deformation and forming the chip 140 of the chip transferring substrate 100, fig. 11 illustrates a process of generating shrinkage deformation and transferring the chip 140 to the receiving substrate 300 of the chip transferring substrate 100, fig. 12 is a cross-sectional view of the process of the chip transferring method shown in fig. 10 and 11, the chip mounts 120 in fig. 10 to 12 are shown in an array arrangement as an example, and the structure of the chip transfer substrate 100 in the initial state and after the stretching deformation of the stretchable film layer 130 is illustrated in fig. 10 and 12.
Due to the stretching deformation of the stretch film layer 130, the distance between the adjacent chip mounts 120 is increased, including: an increase in the spacing between adjacent die paddles 120 in the X direction, and an increase in the spacing between adjacent die paddles 120 in the Y direction. At this time, the pitch between adjacent chip mounts 120 in the chip transfer substrate 100 is the process precision that can be realized by the prior art for chip fabrication, or the pitch is the transfer precision that can be realized by the chip bulk transfer technology. Therefore, for the chip transfer substrate 100 in this state (the stretch film layer 130 is in the tensile deformation state), the chip 140 may be formed on the chip base 120, i.e., the chip 140 on the chip base 120 may be formed under the precision conditions that can be realized by the current process, as shown in fig. 10 and 12.
In the embodiment of the present invention, in the chip transfer substrate 100 on which the chips 140 are formed, the pitch between adjacent chip mounts 120 (or adjacent chips 140) is the transfer precision of the bulk transfer in the prior art, for example, 20um, and the transfer precision cannot meet the requirement of the bulk transfer on the precision in the fabrication process of some micro devices. Aiming at the problem of poor transfer precision in the prior art, the deformation characteristic of the telescopic film layer 130 is combined, and the second operation can be performed on the telescopic film layer 130 in the stretching deformation state, so that the distance between any adjacent chip bases 120 is reduced. Similar to the above-described telescopic deformation, the distance between the adjacent chip mounts 120 is reduced, including: a decrease in the pitch of adjacent die paddles 120 in the X direction, and a decrease in the pitch of adjacent die paddles 120 in the Y direction. After the second operation is performed, the size and shape of the stretchable film layer 130 and the chip transfer substrate 100 are restored to the initial state, the chip transfer substrate 100 has the formed chips 140 thereon, and the distance between adjacent chips 140 is smaller, for example, less than or equal to 15um, as shown in fig. 11 and 12, which shows that the stretchable film layer 130 in the chip transfer substrate 100 has been restored to the initial form through the deformation of the shrinkage, and at this time, the chips 140 are formed on the chip base 120, compared with the initial form of the chip transfer substrate 100. That is, by using the deformation characteristic of the stretchable film layer 130 in the chip transfer substrate 100, the chip transfer method provided by the embodiment of the present invention is used to perform the bulk transfer of chips, so that the distance between adjacent chips 140 can be reduced to a great extent, that is, the precision of forming a large number of chips 140 is improved to a great extent, and thus the transfer precision and the transfer efficiency of the bulk transfer of chips are improved.
According to the chip transfer method provided by the embodiment of the invention, the telescopic film layers arranged between the adjacent chip bases generate tensile deformation by performing the first operation on the telescopic film layers in the chip transfer substrate, the chip to be transferred is formed on the chip bases in the state that the telescopic film layers are in the tensile deformation state, and then the telescopic film layers arranged between the adjacent chip bases generate shrinkage deformation by performing the second operation on the telescopic film layers. The chip transfer method provided by the above embodiment of the present invention is applied to the chip transfer substrate provided by the above embodiment of the present invention, that is, the deformation characteristic of the stretchable film layer in the chip transfer substrate, and can form a chip on the chip base of the chip transfer substrate in a state where the stretchable film layer is stretched and deformed, and then, can cause the stretchable film layer to be shrunk and deformed to recover to an initial state, so that the distance between adjacent chips can be reduced to a great extent, that is, the process precision for forming a large number of chips can be improved to a great extent, and the transfer precision and transfer efficiency for transferring a large number of chips can be improved.
Optionally, fig. 13 is a flowchart of another chip transfer method provided in the embodiment of the present invention. On the basis of the embodiment shown in fig. 9, the method provided in the embodiment of the present invention, after S230, may further include:
s240, aligning the chip transfer substrate and the receiving substrate, and transferring the chips in the chip transfer substrate to the receiving substrate;
and S250, stripping the chip transfer substrate.
In the embodiment of the invention, after the chip is formed on the chip base of the chip transfer substrate and the telescopic film layer is restored to the initial form through the deformation of shrinkage, a huge amount of transfer operation can be performed on the chip in the chip transfer substrate. In practical application, the chip transfer substrate and the receiving substrate are bonded in alignment, so that massive transfer of chips is performed, and the chip transfer substrate is peeled off after the massive transfer of the chips is completed. As the processes shown in fig. 11 and 12, the processes of transferring the chip 140 from the chip transfer substrate 100 to the receiving substrate 300 and peeling off the chip transfer substrate 100 are illustrated.
The transfer method for the high-precision chip bulk transfer provided by the embodiment of the invention has a simple principle, can realize high-precision transfer, forms chips under the precision condition which can be realized by the prior art, then utilizes the stretching characteristic of a stretching film layer to reduce the distance between the chips, further optimization based on the prior transfer precision is realized, higher process precision (embodied as smaller chip distance) is achieved, and then bulk transfer with a receiving substrate is carried out.
It should be noted that, in step S220, the embodiment of the invention does not limit the manner in which the chip is formed on the chip base in the state that the stretchable film layer is under stretching deformation.
In one implementation manner of the embodiment of the present invention, S220 may include: a chip is deposited on each chip pad.
In this implementation, the chip transfer substrate serves as a donor substrate in the entire process of bulk transfer of chips, and accordingly, the chip transfer method is direct transfer, which is a process of direct transfer as shown in fig. 10 to 12.
In one implementation manner of the embodiment of the present invention, S220 may include:
aligning a second substrate with chips and the chip transfer substrate, wherein the chips in the second substrate correspond to the chip bases in the chip transfer substrate one by one;
transferring the chips in the second substrate to corresponding chip bases;
and stripping the second substrate.
In this implementation, the chip transfer substrate serves as a transfer substrate throughout the entire process of bulk transfer of chips, and accordingly, the chip transfer method is indirect transfer. In the direct transfer mode, the difficulty of the process of directly forming the chip on the chip transfer substrate is high, the chip may have dead spots after being formed, and the dead spots can be integrally transferred to the receiving substrate, so that the yield in the manufacturing of the micro-component can be influenced. Fig. 14 is a schematic diagram of a part of the processing steps in another processing procedure of the chip transfer method according to the embodiment of the present invention, fig. 15 is a schematic diagram of another part of the processing steps in the processing procedure of the chip transfer method according to the embodiment of fig. 14, in which fig. 14 is a schematic diagram of a processing procedure in which the chip transfer substrate 100 generates tensile deformation and the chip 140 is transferred from the second substrate 400, fig. 15 is a schematic diagram of a processing procedure in which the chip transfer substrate 100 generates shrinkage deformation and the chip 140 is transferred to the receiving substrate 300, fig. 16 is a cross-sectional view of the processing procedures of the chip transfer method shown in fig. 14 and 15, comparing the transfer procedures shown in fig. 10 to fig. 12, fig. 14 to fig. 16 are processing procedures of indirect transfer, which are different mainly in the way of forming the chip on the chip transfer substrate 100, and in the processing procedures shown in fig. 14 to fig. 16, the chip 140 on the chip transfer substrate 100 is transferred from the second substrate 400 (donor substrate), and the second substrate 400 is peeled off after the transfer, a huge amount of chip transfer needs to be performed twice during the process. Obviously, the embodiment of the invention provides a large chip transferring mode which is simple and practical, high in economy, high in chip transferring efficiency, high in yield and high in transferring precision.
Optionally, the stretchable film layer in the embodiment of the present invention may include a first electrode layer and a second electrode layer that are oppositely disposed, and an elastic film layer that is disposed between the first electrode layer and the second electrode layer, and based on the structural feature of the stretchable film layer, implementation manners of performing a first operation on the stretchable film layer in the above embodiment of the present invention may include:
applying a first voltage between the first electrode layer and the second electrode layer to enable the telescopic film layer arranged between the adjacent chip bases to generate stretching deformation;
accordingly, an implementation manner of performing the second operation on the telescopic film layer in the embodiment of the present invention may include:
and applying a second voltage between the first electrode layer and the second electrode layer to enable the telescopic film layer arranged between the adjacent chip bases to generate shrinkage deformation.
In the embodiment of the invention, based on the structural characteristics of the telescopic film layer, a first voltage can be applied to the telescopic film layer through the first electrode layer and the second electrode layer of the telescopic film layer, so that the elastic film layer in the telescopic film layer generates tensile deformation under the action of the voltage; that is to say, for the stretchable film layer of the structure, the first operation is an operation of applying a first voltage, the first voltage applied may be a positive voltage or a negative voltage, and the magnitude of the first voltage applied may be determined according to parameters such as a type deformation amount required to generate a stretch shape, a process precision of forming a chip, and a driving strain of the elastic film layer. In addition, after the chip is formed on the chip transfer substrate, a second voltage, for example, 0 volt (V), may be applied to the flexible film layer through the first electrode layer and the second electrode layer of the flexible film layer, and the operation of applying the second voltage is to turn off the first voltage, so that the elastic film layer is deformed to be contracted to return to the original shape.
Optionally, in the embodiment of the present invention, in order to control the massive transfer of the chip to have higher process precision, the deformation requirement of the stretchable film layer is to have an elastic deformation capability, that is, the stretchable film layer can be restored to an initial state when subjected to a shrinkage deformation after being subjected to a stretching deformation, that is, the stretching deformation amount is required to be equal to the shrinkage deformation amount.
Optionally, in the above embodiments, it has been described that both the first base layer and the flexible film layer may be made of a flexible material, and the first base layer is a flexible substrate, so that the chip transfer substrate and the chip transfer method may be applied to a curved-surface-shaped transfer substrate for shaping and positioning, and may be aligned with a receiving substrate having a matching shape for transferring, thereby realizing bulk transfer of chips in the curved-surface-shaped substrate.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (13)
1. A chip transfer substrate, comprising: the chip packaging structure comprises a first substrate layer, chip bases and a telescopic film layer, wherein the chip bases are arranged on the first substrate layer;
the telescopic film layer is used for generating tensile deformation in a direction parallel to the first substrate layer when a first operation is executed so as to increase the distance between the chip bases, and generating telescopic deformation in a direction parallel to the first substrate layer when a second operation is executed so as to reduce the distance between the chip bases.
2. The chip transfer substrate according to claim 1, wherein the chip mounts have light emitting diode chips disposed thereon in a one-to-one correspondence.
3. The chip transfer substrate according to claim 1,
the telescopic film layer is arranged between the adjacent chip bases arranged in the first direction and arranged between the adjacent chip bases arranged in the second direction; the second direction is perpendicular to the first direction.
4. The chip transfer substrate according to claim 1, wherein the stretchable film layer comprises a first electrode layer and a second electrode layer disposed opposite to each other, and an elastic film layer disposed between the first electrode layer and the second electrode layer, the stretchable film layer being deformed in a stretching manner and being deformed in a shrinking manner, and the stretchable film layer comprises:
the telescopic film layer is used for generating stretching deformation when a first voltage is applied between the first electrode layer and the second electrode layer, and generating contraction deformation when a second voltage is applied between the first electrode layer and the second electrode layer.
5. The chip transfer substrate according to any one of claims 1 to 4, wherein the amount of tensile deformation and the amount of shrinkage deformation of the stretchable film layer are equal.
6. The chip transfer substrate according to any one of claims 1 to 4, wherein the material of the stretchable film layer is silicone resin or acrylic resin.
7. The chip transfer substrate according to any one of claims 1 to 4, wherein the first base layer and the stretchable film layer are made of flexible materials.
8. The chip transfer substrate according to any one of claims 1 to 4, wherein the array of chip pads is arranged on the first base layer; or,
the chip bases in the odd-numbered rows and the chip bases in the even-numbered rows are arranged in a crossed manner in a first direction, and the chip bases in the odd-numbered rows and the chip bases in the even-numbered rows are arranged in a crossed manner in a second direction.
9. A chip transfer method performed by the chip transfer substrate according to any one of claims 1 to 8, the method comprising:
executing a first operation on a telescopic film layer in the chip transfer substrate, so that the telescopic film layer arranged between adjacent chip bases generates tensile deformation in a direction parallel to the first base layer, and the distance between the chip bases is increased;
forming a chip to be transferred on a chip base of the chip transfer substrate;
and executing a second operation on the telescopic film layers, so that the telescopic film layers arranged between the adjacent chip bases generate contracted deformation in the direction parallel to the first substrate layer, and the distance between the chip bases is reduced.
10. The chip transfer method according to claim 9, wherein the forming of the chip to be transferred on the chip mount includes:
depositing a chip on each of the chip mounts.
11. The chip transfer method according to claim 9, wherein the forming of the chip to be transferred on the chip mount includes:
aligning a second substrate with chips and the chip transfer substrate, wherein the chips in the second substrate correspond to the chip bases in the chip transfer substrate one by one;
transferring the chips in the second substrate to corresponding chip bases;
and stripping the second substrate.
12. The chip transferring method according to claim 9, wherein the stretchable film layer comprises a first electrode layer and a second electrode layer which are oppositely arranged, and an elastic film layer arranged between the first electrode layer and the second electrode layer, and the performing of the first operation comprises:
applying a first voltage between the first electrode layer and the second electrode layer;
the performing a second operation comprising:
a second voltage is applied between the first electrode layer and the second electrode layer.
13. The chip transfer method according to any one of claims 9 to 12, wherein after the performing the second operation on the stretch film layer, the method further comprises:
aligning the chip transfer substrate with a receiving substrate, and transferring the chips in the chip transfer substrate to the receiving substrate;
and stripping the chip transfer substrate.
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| CN110739260B (en) * | 2019-10-25 | 2023-08-11 | 京东方科技集团股份有限公司 | Transfer substrate and transfer method |
| CN111095516B (en) | 2019-12-17 | 2021-08-24 | 重庆康佳光电技术研究院有限公司 | Mass transfer device and mass transfer method |
| CN113517215B (en) * | 2020-04-09 | 2024-08-13 | 京东方科技集团股份有限公司 | Transfer substrate, manufacturing method thereof and transfer method |
| CN112968022B (en) * | 2020-05-28 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | LED display backboard and massive transfer method and repair method thereof |
| CN112053989A (en) * | 2020-09-15 | 2020-12-08 | 广东省科学院半导体研究所 | Micro device transfer method and device transfer device |
| WO2022061512A1 (en) * | 2020-09-22 | 2022-03-31 | 泉州三安半导体科技有限公司 | Imprint and transferring method for transferring light emitting diode |
| CN112967987B (en) * | 2020-10-30 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Chip transfer substrate and chip transfer method |
| CN112599466B (en) * | 2020-12-08 | 2023-02-10 | 京东方科技集团股份有限公司 | Transfer substrate, manufacturing method thereof and transfer method |
| CN117133837A (en) * | 2023-10-26 | 2023-11-28 | 季华实验室 | Chip transfer method, elastically deformable structure and array substrate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042738A (en) * | 2005-08-01 | 2007-02-15 | Fuji Electric Holdings Co Ltd | Semiconductor device |
| CN106058010A (en) * | 2016-07-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Micro light emitting diode array's transfer printing method |
| CN106229326A (en) * | 2016-07-22 | 2016-12-14 | 深圳市华星光电技术有限公司 | Curved substrate transfers method and the manufacture method of the micro-LED display panel of curved surface of micro-light emitting diode |
| CN108281368A (en) * | 2018-01-22 | 2018-07-13 | 京东方科技集团股份有限公司 | A kind of transfer apparatus and its transfer method |
| CN108346606A (en) * | 2018-02-09 | 2018-07-31 | 京东方科技集团股份有限公司 | A kind of microchip transfer device and microchip transferring system |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN109449102A (en) * | 2018-11-09 | 2019-03-08 | 京东方科技集团股份有限公司 | Production method, drive substrate, display panel and the display device of drive substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0129500B1 (en) * | 1992-10-27 | 1998-04-06 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| CN107799455B (en) * | 2017-10-24 | 2020-06-19 | 上海天马微电子有限公司 | Transfer head, manufacturing method thereof, transfer printing method and manufacturing method of display panel |
| CN108336097B (en) * | 2018-02-12 | 2020-07-03 | 京东方科技集团股份有限公司 | Micro light emitting diode transfer method, display device and preparation method thereof |
| CN109273459B (en) * | 2018-09-27 | 2021-01-08 | 京东方科技集团股份有限公司 | Transfer substrate, manufacturing method and transfer method |
| CN109411392B (en) * | 2018-10-16 | 2019-06-25 | 广东工业大学 | A kind of the flood tide transfer device and transfer method of Micro-LED |
| CN109599354A (en) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | A kind of structure and method of the transfer of Micro-LED flood tide |
-
2019
- 2019-04-11 CN CN201910288125.1A patent/CN109950194B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042738A (en) * | 2005-08-01 | 2007-02-15 | Fuji Electric Holdings Co Ltd | Semiconductor device |
| CN106229326A (en) * | 2016-07-22 | 2016-12-14 | 深圳市华星光电技术有限公司 | Curved substrate transfers method and the manufacture method of the micro-LED display panel of curved surface of micro-light emitting diode |
| CN106058010A (en) * | 2016-07-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Micro light emitting diode array's transfer printing method |
| CN108281368A (en) * | 2018-01-22 | 2018-07-13 | 京东方科技集团股份有限公司 | A kind of transfer apparatus and its transfer method |
| CN108346606A (en) * | 2018-02-09 | 2018-07-31 | 京东方科技集团股份有限公司 | A kind of microchip transfer device and microchip transferring system |
| CN108400108A (en) * | 2018-03-23 | 2018-08-14 | 京东方科技集团股份有限公司 | A kind of micro element transfer device and micro element transferring system |
| CN109449102A (en) * | 2018-11-09 | 2019-03-08 | 京东方科技集团股份有限公司 | Production method, drive substrate, display panel and the display device of drive substrate |
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