CN106058010A - Micro light emitting diode array's transfer printing method - Google Patents
Micro light emitting diode array's transfer printing method Download PDFInfo
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- CN106058010A CN106058010A CN201610597458.9A CN201610597458A CN106058010A CN 106058010 A CN106058010 A CN 106058010A CN 201610597458 A CN201610597458 A CN 201610597458A CN 106058010 A CN106058010 A CN 106058010A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/828—Bonding techniques
- H01L2224/82895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention provides a micro light emitting diode array's transfer printing method. A plurality of projections are arranged on a receiving substrate; micro light emitting diodes are placed on the corresponding projections on the receiving substrate; therefore, for the same transfer head, the change in the arraying manner of a plurality of projections on the receiving substrate make possible the transfer printing of micro light emitting diode arrays in different arraying manners on a receiving substrate.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to the printing transferring method of a kind of micro-light emitting diode matrix.
Background technology
Micro-light emitting diode (Micro LED) is a kind of size device between several microns to hundreds of micron, due to it
Much smaller compared with the size of common LED, so that single LED is possibly realized for display as pixel (Pixel),
Micro light-emitting diode display is a kind of using highdensity Micro LED array as showing that pel array shows to realize image
Display, the same with large-sized outdoor LED display screen, each pixel can addressing, be operated alone and light, can regard as
The scaled down version of outdoor LED display screen, is reduced to micron order by pixel distance from grade, Micro light-emitting diode display and organic
Light emitting diode (Organic Light-Emitting Diode, OLED) display equally belongs to self-emitting display, but
Micro light-emitting diode display also has compared to OLED display that stability of material is more preferable, the life-span is longer, askiatic branding etc. is excellent
Point is it is considered to be the maximum contention opponent of OLED display.
Due to Lattice Matching, Micro LED component first must pass through molecule on the supplying substrate of sapphire class
The method of beam epitaxy grows out, subsequently by laser lift-off (Laser lift-off, LLO) technology by naked for micro-light emitting diode
Chip (bare chip) is separated from supplying substrate, then by micro-transfer (Micro Transfer Print, NTP) skill
Art be transferred into the most previously prepared complete circuit pattern accept on substrate, form Micro LED array, and then make
Micro LED display panel.Wherein, the ultimate principle of micro-transfer is substantially: use the transfer head (Transfer with patterning
Head), such as, there is polydimethylsiloxane (Polydimethylsiloxane, PDMS) the class transfer head of bulge-structure, logical
Cross have sticking PDMS transport layer (Transfer layer) by Micro LED bare chip from supplying substrate absorption
Come, then PDMS transfer head is carried out para-position with accepting substrate, Micro LED bare PDMS transfer head adsorbed subsequently
Chip attaches to accept on the position that substrate is preset, then by PDMS transfer head from accepting stripping substrate, can complete Micro
The transfer of LED bare chip, forms Micro LED array.
At present, the most once delivered relevant Micro LED from Hibernian X-celeprint, texas,U.S university etc. to show
Show the achievement in research of device.Apple, after formal purchase in 2014 has the LuxVue of Micro LED technology, causes industry to open
Beginning to pay close attention to the technical advantage of Micro LED, the high-tech grasping Micro LED Transfer Printing as is public
Department, the micrometastasis technology difference that LuxVue with X-Celeprint is used is bigger.X-Celeprint mainly utilizes the films such as PDMS
The absorption affinity of Rotating fields carries out transfer action, and LuxVue is by being energized in the projection of transfer head, utilizes electrostatic force to adsorb
The devices such as Micro LED.
Wherein, for micro-transfer modes of PDMS class transfer head, owing to the bulge-structure on PDMS film layer is often through light
The technological means such as quarter are made, and its feature is that preparation would become hard to after completing change so that the protruding row in a kind of PDMS transfer head
Row pattern (Pattern) often corresponding a kind of micro element (Micro Device) is at the arrangement mode accepted on substrate.So when
When using PDMS class transfer head that Micro LED is shifted, owing to the adhesion of PDMS film layer the most all approximates so that one
After the patterning of secondary transfer is determined to, it is impossible to be adapted to other patterning.
Summary of the invention
It is an object of the invention to provide the printing transferring method of a kind of micro-light emitting diode matrix, same PDMS can be used to pass
Send the head micro-light emitting diode matrix accepting the different arrangement mode of transfer on substrate.
For achieving the above object, the invention provides the printing transferring method of a kind of micro-light emitting diode matrix, including walking as follows
Rapid:
Step 1, offer transfer head and carrier substrate, described carrier substrate is provided with several micro-light emitting diode, utilizes institute
State transfer head and pick up the micro-light emitting diode on described carrier substrate；
Step 2, offer accept substrate, in the described acceptance projection accepting to form several array arrangement on substrate；
Step 3, carry out para-position by being loaded with the transfer head of micro-light emitting diode with the described substrate that accepts, micro-by transfer head
Light emitting diode is placed in corresponding acceptance projection, thus corresponding described several array arrangement modes accepting projection, complete
The transfer of micro-light emitting diode matrix.
The protruding material that accepts formed in described step 2 is silicon nitride or silicon oxide.
The protruding height that accepts formed in described step 2 is 0.01 μm-100 μm.
In described step 2, photoetching process is used to form described several acceptance projection on substrate described acceptance.
Described step 2 also includes, is accepted protruding by photoetching process described and accept to be formed on substrate wire.
The material of described wire is tin indium oxide.
Described step 2 also includes, arranges low melting point pad on described wire.
Described micro-light emitting diode has metal electrode, and described step 3 also includes, described being placed in by micro-light emitting diode
After acceptance projection is upper, carry out heat treated so that the low melting point pad fusing on wire, thus by the gold of micro-light emitting diode
Belong to electrode and the wire conducting in described acceptance projection, and described micro-light emitting diode is fixed in described acceptance projection.
The substrate that accepts provided in described step 2 is tft array substrate.
Described transfer head is PDMS transfer head, and including PDMS film layer, described PDMS film layer has the convex of several array arrangement
Play structure, described micro-light emitting diode is picked up by the bulge-structure of described PDMS film layer by described step 1.
Beneficial effects of the present invention: the invention provides the printing transferring method of a kind of micro-light emitting diode matrix, accepting base
Arranging several acceptance projection on plate, micro-light emitting diode is placed in and accepts to accept accordingly in projection on substrate, therefore, for same
One transfer head, protruding at the arrangement mode accepted on substrate by changing several acceptance, just may be implemented in and accept to turn on substrate
Micro-light emitting diode matrix of the different arrangement mode of print.
Accompanying drawing explanation
In order to be able to be further understood that inventive feature and technology contents, refer to below in connection with the present invention is detailed
Illustrate and accompanying drawing, but accompanying drawing only provides reference and explanation use, be not used for the present invention is any limitation as.
In accompanying drawing,
Fig. 1 is the schematic flow sheet of the printing transferring method of micro-light emitting diode matrix of the present invention；
Fig. 2-3 is the schematic diagram of the step 1 of the printing transferring method of micro-light emitting diode matrix of the present invention；
Fig. 4-6 is the schematic diagram of the step 3 of the printing transferring method of micro-light emitting diode matrix of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect, being preferable to carry out below in conjunction with the present invention that the present invention taked
Example and accompanying drawing thereof are described in detail.
Referring to Fig. 1, the present invention provides the printing transferring method of a kind of micro-light emitting diode matrix, comprises the steps:
Step 1, as Figure 2-3, it is provided that transfer head 50 and carrier substrate 10, described carrier substrate 10 is provided with several
Micro-light emitting diode 40, utilizes described transfer head 50 to pick up the micro-light emitting diode 40 on described carrier substrate 10.
Specifically, described transfer head 50 can be PDMS transfer head, and including PDMS film layer, described PDMS film layer has several
The bulge-structure 51 of array arrangement, utilizes the bulge-structure 51 of described PDMS film layer to pass through absorption affinity to described in described step 1
Micro-light emitting diode 40 is picked up.In addition, described transfer head 50 can also be other kinds of transfer head, such as passes through
The transfer head that electrostatic force is picked up.
Specifically, on described carrier substrate 10, described micro-light emitting diode 40 has near the side of carrier substrate 10
Metal electrode 41.
Step 2, offer accept substrate 20, in the described acceptance projection 21 accepting to form several array arrangement on substrate 20.
Specifically, described several accept protruding 21 and accept array of protrusions accepting to constitute on substrate 20, wherein said several
Accept protruding 21 and accepting arrangement mode concrete on substrate 20 described, micro-according to transfer required for accepting on substrate 20
Depending on the arrangement mode of light emitting diode matrix.
Specifically, the material accepting protruding 21 formed in described step 2 is silicon nitride or silicon oxide etc..
Specifically, the height accepting protruding 21 formed in described step 2 is 0.01 μm-100 μm, so that follow-up
When transferring to accept substrate 20 by the micro-light emitting diode 40 in transfer head 50, only accepting the acceptance projection 21 on substrate 20 can
Contact with micro-light emitting diode 40, and other parts can not contact with micro-light emitting diode 40 so that micro-light emitting diode 40 quilt
It is placed in accordingly in acceptance protruding 21.
Specifically, in described step 2, photoetching process is used to form described several acceptance projection on substrate 20 described acceptance
21, described photoetching process specifically includes light blockage coating, exposes, develops and the step such as etching.
Specifically, described step 2 also includes, accepts to be formed on protruding 21 wire 22, in institute by photoetching process described
State and low melting point pad is set on wire 22.
Specifically, described wire 22 is the material with electric conductivity, and the material of described wire 22 is preferably tin indium oxide
(ITO)。
Step 3, as Figure 4-Figure 6, is carried out the transfer head 50 being loaded with micro-light emitting diode 40 with the described substrate 20 that accepts
Para-position, is placed in the micro-light emitting diode 40 in transfer head 50 in corresponding acceptance projection 21, thus corresponding described several connects
By the array arrangement mode of protruding 21, complete the transfer of micro-light emitting diode matrix.
Specifically, described step 3 also includes, after micro-light emitting diode 40 is placed in described acceptance on protruding 21, enters
Row heat treated so that the low melting point pad fusing on wire 22, thus by the metal electrode 41 of micro-light emitting diode 40 and institute
State the wire 22 accepted on protruding 21 to turn on, and make described micro-light emitting diode 40 be fixed on described acceptance on protruding 21.
Specifically, the substrate 20 that accepts provided in described step 2 is tft array substrate, thus completes micro-light-emitting diodes
After the transfer of pipe array, can be further used for making micro-light emitting diode indicator.
In sum, the invention provides the printing transferring method of a kind of micro-light emitting diode matrix, accept setting on substrate
Several acceptance projections, micro-light emitting diode is placed in and accepts to accept accordingly in projection on substrate, therefore, for same transmission
Head, protruding at the arrangement mode accepted on substrate by changing several acceptance, just may be implemented in and accept transfer difference row on substrate
Micro-light emitting diode matrix of row mode.
The above, for the person of ordinary skill of the art, can be according to technical scheme and technology
Other various corresponding changes and deformation are made in design, and all these change and deformation all should belong to the claims in the present invention
Protection domain.
Claims (10)
1. the printing transferring method of a micro-light emitting diode matrix, it is characterised in that comprise the steps:
Step 1, offer transfer head (50) and carrier substrate (10), described carrier substrate (10) is provided with several micro-light-emitting diodes
Pipe (40), utilizes described transfer head (50) to pick up the micro-light emitting diode (40) on described carrier substrate (10)；
Step 2, offer accept substrate (20), accept the upper acceptance projection forming several array arrangements of substrate (20) described
(21)；
Step 3, carry out para-position by being loaded with the transfer head (50) of micro-light emitting diode (40) with the described substrate (20) that accepts, will transmit
Micro-light emitting diode (40) on head (50) is placed in corresponding acceptance protruding (21), thus corresponding described several acceptance projections
(21) array arrangement mode, completes the transfer of micro-light emitting diode matrix.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that institute's shape in described step 2
The material of the acceptance become protruding (21) is silicon nitride or silicon oxide.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that institute's shape in described step 2
The height of the acceptance become protruding (21) is 0.01 μm-100 μm.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that in described step 2, uses
Photoetching process accepts described several acceptance projection (21) of the upper formation of substrate (20) described.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that described step 2 also includes,
Accept protruding (21) by photoetching process described and accept to be formed on substrate (20) wire (22).
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 5, it is characterised in that the material of described wire (22)
Material is tin indium oxide.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 5, it is characterised in that described step 2 also includes,
Described wire (22) arranges low melting point pad.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 7, it is characterised in that described micro-light emitting diode
(40) having metal electrode (41), described step 3 also includes, being placed in by micro-light emitting diode (40), described acceptance is protruding (21)
After on, carry out heat treated so that the low melting point pad fusing on wire (22), thus by the gold of micro-light emitting diode (40)
Belong to electrode (41) and the described wire (22) accepted on protruding (21) conducting, and described micro-light emitting diode (40) is fixed on
In described acceptance protruding (21).
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that provide in described step 2
The substrate (20) that accepts be tft array substrate.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that described transfer head (50)
For PDMS transfer head, including PDMS film layer, described PDMS film layer has the bulge-structure (51) of several array arrangement, described step
By the bulge-structure (51) of described PDMS film layer, described micro-light emitting diode (40) is picked up in 1.
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| CN201610597458.9A CN106058010B (en) | 2016-07-26 | 2016-07-26 | The transfer method of micro- light emitting diode matrix |
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| CN201610597458.9A CN106058010B (en) | 2016-07-26 | 2016-07-26 | The transfer method of micro- light emitting diode matrix |
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| CN106903978A (en) * | 2017-02-21 | 2017-06-30 | 深圳市华星光电技术有限公司 | The transfer device of transfer template and micro- light emitting diode |
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| CN107146835A (en) * | 2017-06-30 | 2017-09-08 | 中国科学院半导体研究所 | A kind of preparation method of micro- LED component array element |
| CN107658371A (en) * | 2017-09-15 | 2018-02-02 | 武汉大学 | The manufacture method of Micro LED based on laser direct-writing |
| CN108140664A (en) * | 2017-04-19 | 2018-06-08 | 歌尔股份有限公司 | Micro- light emitting diode matrix transfer method, manufacturing method and display device |
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| WO2019114173A1 (en) * | 2017-12-11 | 2019-06-20 | 厦门市三安光电科技有限公司 | Micro light-emitting diode and transfer method therefor |
| CN109950194A (en) * | 2019-04-11 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of chip transfer base substrate and chip transfer method |
| CN109994533A (en) * | 2019-04-17 | 2019-07-09 | 京东方科技集团股份有限公司 | Array substrate, display panel and its manufacturing method |
| CN110224002A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | A kind of microLED panel preparation method and Preparation equipment |
| TWI678691B (en) * | 2017-11-15 | 2019-12-01 | 鴻海精密工業股份有限公司 | Method for making micro led display panel |
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