CN113284991A - Micro LED chip, packaging method thereof and electronic device - Google Patents
Micro LED chip, packaging method thereof and electronic device Download PDFInfo
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- CN113284991A CN113284991A CN202110774883.1A CN202110774883A CN113284991A CN 113284991 A CN113284991 A CN 113284991A CN 202110774883 A CN202110774883 A CN 202110774883A CN 113284991 A CN113284991 A CN 113284991A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 239000010410 layer Substances 0.000 claims description 61
- 238000003466 welding Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
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- 239000004332 silver Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 15
- 238000012858 packaging process Methods 0.000 description 11
- 238000001514 detection method Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
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- 238000012536 packaging technology Methods 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- Led Device Packages (AREA)
Abstract
The invention provides a micro LED chip, a packaging method thereof and an electronic device, wherein the packaging method comprises the following steps: providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures; providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance; bonding each receiving electrode and the corresponding micro LED chip structure; and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a micro LED chip, an electronic device and a packaging method thereof.
Background
An LED (Light-Emitting Diode) chip is used as a core component of semiconductor lighting, it is ensured that basic photoelectric performance and appearance requirements are the basis of subsequent processing, and after the production and processing of the LED chip are completed, the photoelectric performance of the chip needs to be tested, so that the LED chip is classified according to its photoelectric parameters.
In the existing LED chip, an automatic tester is generally used for testing, but the spot testing technology in the prior art is generally suitable for LED chips of ordinary size. With the development of LEDs, minileds and micro LEDs are used as a new generation of display technology, and LED chips are miniaturized for use as a display panel. Taking a Micro LED with the size smaller than 100 μm as an example, the photoelectric test of the Micro LED Micro device is difficult to be completed by the probe equipment for the electrical test in the prior art because the size of the electrode of the Micro LED is reduced and the distance between the positive electrode and the negative electrode is reduced. In addition, the photoluminescence detection and the optical detection of the current non-contact test means cannot replace the test contents of the electrical test.
In addition, the micro LED chip with the flip-chip packaging structure is based on the flip-chip welding technology, and on the basis of the traditional micro LED chip packaging, the gold wire lead packaging technology is reduced, and a lead frame and routing are omitted. Because no gold wire lead is arranged, the packaging problems such as cold joint, poor contact and the like can be avoided. In addition, compared with the packaging process of the micro LED chip of the forward packaging structure, the packaging density of the micro LED chip of the inverted packaging structure is increased, and the packaging volume is obviously reduced.
Therefore, a micro LED chip structure and a manufacturing method thereof are needed to overcome the problems of high packaging difficulty and difficulty in photoelectric detection of the existing micro LED chip structure by using the advantages of the chip scale packaging technology of the flip chip packaging structure.
Disclosure of Invention
In order to solve the above problems, the technical solution of the present invention provides a packaging method, which is suitable for packaging a micro LED chip, and the packaging method includes:
providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures;
providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance;
bonding each receiving electrode and the corresponding micro LED chip structure; and
and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.
As an optional technical solution, the micro LED chip is a flip-chip micro LED chip.
As an optional technical solution, the conductive bonding layer is selected from an anisotropic conductive adhesive layer, a solder paste layer, or a conductive silver paste.
As an optional technical solution, an edge of the receiving electrode protrudes an edge of the micro LED chip projected on the second substrate.
As an optional technical solution, the method further comprises: forming a plurality of through holes in the second substrate, wherein the through holes correspond to the receiving electrodes one to one, and each receiving electrode is exposed from the corresponding through hole;
filling a conducting layer in the through holes; and
forming a plurality of welding electrodes on one side of the second substrate far away from the plurality of micro LED chip structures, wherein the plurality of welding electrodes correspond to the plurality of receiving electrodes one to one;
wherein, each conducting layer conducts the corresponding receiving electrode and the welding electrode.
As an optional technical solution, the material of the conductive layer is selected from metallic copper, metallic aluminum, or a combination thereof.
As an optional technical solution, the method further comprises: forming a plurality of auxiliary electrodes on the second substrate, wherein the plurality of auxiliary electrodes correspond to the plurality of receiving electrodes one to one; each auxiliary electrode covers one side of each corresponding receiving electrode far away from the second substrate, and each auxiliary electrode is electrically connected with each receiving electrode.
The present invention also provides a micro LED chip, including: a substrate; a receiving electrode disposed on a surface of one side of the substrate; a conductive bonding layer disposed on a surface of the receiving electrode on a side away from the substrate; and the device electrode of the micro LED chip structure extends out towards one side of the substrate, and is fixedly connected with the conductive bonding layer.
As an optional technical solution, the micro LED chip structure further comprises a bonding electrode, wherein the bonding electrode is located on a surface of the substrate on a side away from the micro LED chip structure; the substrate further comprises a through hole and a conducting layer filled in the through hole, and the conducting layer conducts the welding electrode and the receiving electrode.
The invention also provides an electronic device which comprises the micro LED chip.
Compared with the prior art, the invention provides the micro LED chip, the packaging method thereof and the electronic device, wherein the receiving electrode is formed on the second substrate in advance through a patterning process, and the receiving electrode can meet the test specification of the existing photoelectric detection device by adjusting the area size of the receiving electrode. In addition, the mode of combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure reduces the packaging difficulty of the micro LED chip under the wafer level packaging process, so that the packaging process is easier to carry out, and the requirement on equipment is obviously reduced.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a packaging method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a micro LED chip according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a first substrate.
Fig. 4 is a schematic cross-sectional view of a second substrate.
Fig. 5 is a top view of a second substrate.
Fig. 6 is a schematic cross-sectional view of a conductive bonding layer formed on a second substrate.
Fig. 7 is a schematic cross-sectional view of bonding a first substrate and a second substrate.
Fig. 8 is a schematic cross-sectional view of separating a first substrate and a second substrate.
FIG. 9 is a cross-sectional view of a second substrate etched to form a via.
Fig. 10 is a schematic view of forming a conductive layer in a via hole of a second substrate.
FIG. 11 is a cross-sectional view of a conductive layer formed over a side of a second substrate.
Fig. 12 is a schematic cross-sectional view of a patterned conductive layer.
Fig. 13 is a schematic cross-sectional view of a micro LED chip according to another embodiment of the invention.
Fig. 14 is a cross-sectional view of a portion of the fabrication process of the micro LED chip of fig. 13.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Wafer Level Package (WLP) refers to a process of performing most or all of the Package testing procedures directly on a Wafer, and then performing a cutting process to form a single component. In WLP, since the die itself becomes the package, it is the smallest package that can be manufactured and is now widely used.
In addition, because the size of the micro LED is obviously reduced, when the micro LED on the wafer is packaged by adopting a wafer-level packaging process, the packaging difficulty is high, and the packaged photoelectric test is not easy to carry out.
As shown in fig. 1, an embodiment of the present invention provides a packaging method suitable for packaging a micro LED chip, including:
providing a first substrate, wherein a plurality of micro LED chip structures are arranged on the first substrate, and a first interval is formed between any two adjacent micro LED chip structures;
providing a second substrate, wherein the second substrate is provided with a plurality of receiving electrodes, each receiving electrode is provided with a conductive bonding layer, any adjacent receiving electrodes are spaced by a second distance, and the second distance is larger than the first distance;
bonding each receiving electrode and the corresponding micro LED chip structure; and
and irradiating the first substrate by laser, and selectively transferring the micro LED chip structure bonded with each receiving electrode to the second substrate to obtain the micro LED chip.
In a preferred embodiment, the receiving electrode is formed on the second substrate in advance through a patterning process, and the area size of the receiving electrode is adjusted, so that the receiving electrode can meet the test specification of the existing photoelectric detection device. Preferably, the size of the receiving electrode can be significantly larger than that of the device electrode in the micro LED chip structure, and in the subsequent photoelectric test, the test probe of the existing photoelectric test apparatus can be in contact with the receiving electrode to perform photoelectric performance detection.
In the above-described packaging method, the receiving electrodes that can be used to improve the reliability of the optoelectronic test are formed in advance, while in combination with the selective separation of portions of the micro LED chip structures on the first substrate by a transfer technique such as a bulk transfer technique, a spread-pitch transfer (the second pitch is greater than the first pitch) is achieved, with a substantial pitch formed between adjacent micro LED chip structures, with the receiving electrodes being arranged in the substantial pitch.
In addition, the packaging difficulty of the micro LED chip under the wafer level packaging process is reduced by combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure, so that the packaging process is easier to perform, and the requirement on equipment is obviously reduced. The packaging process of the micro LED chip 100 is described in detail with reference to fig. 2 to 12. The micro LED chip 100 is, for example, a flip-chip micro LED chip.
As shown in fig. 3, a first substrate 10 is provided, a plurality of micro LED chip structures 20 are disposed on the first substrate 10, and a first distance W1 is formed between any adjacent micro LED chip structures 20.
Each micro LED chip structure 20 includes, from bottom to top, a buffer layer 21, an N-type gallium nitride layer 22, a quantum well layer 23, a P-type gallium nitride 24, and a device electrode 26 stacked in sequence, and a passivation layer 25 covers the buffer layer 21, the N-type gallium nitride layer 22, the quantum well layer 23, and the P-type gallium nitride 24, wherein the device electrode 26 extends out of a surface of the passivation layer 25 on a side away from the first substrate 10, so as to be electrically connected to an external device.
Note that, the buffer layer 21 is patterned to form a very narrow slit structure, and the very narrow slit structure enables adjacent micro LED chip structures to be spaced apart by the first distance W1. Such a narrow slit structure can effectively improve the effective utilization rate of the buffer layer 21.
In a preferred embodiment, the buffer layer 21 is, for example, a gallium nitride buffer layer, a gallium arsenide buffer layer, or a gallium indium arsenide phosphide buffer layer.
In the present embodiment, the micro LED chip structure 20 is, for example, a forward mounting structure LED. The micro LED chip 100 is packaged into a flip-chip structure by the packaging method shown in fig. 1.
Fig. 4 shows a schematic cross-sectional view of the second substrate 30, and fig. 5 shows a schematic top view of the second substrate 30.
As shown in fig. 4 and 5, a plurality of receiving electrodes 40 are disposed on the second substrate 30, and any adjacent receiving electrodes 40 are spaced apart by a second distance W2, where the second distance W2 is greater than the first distance W1.
The receiving electrodes 40 are formed on the second substrate 30 in advance by, for example, a patterning process.
Specifically, a conductive layer is formed on the second substrate 30 by using an evaporation, sputtering, or plating process; coating a positive photoresist on the surface of the conductive layer on the side far away from the second substrate 30; exposing, developing, removing the photoresist, exposing a part of the conductive layer from the positive photoresist layer, and etching to remove the exposed part of the conductive layer to form a plurality of receiving electrodes 40.
In other embodiments of the present invention, the conductive layer patterning process may be performed by using a negative photoresist.
In this embodiment, each receiving electrode 40 includes a first receiving electrode 41 and a second receiving electrode 42 electrically isolated from each other, wherein the first receiving electrode 41 and the first device electrode 261 are electrically connected, and the second receiving electrode 42 and the second device electrode 262 are electrically connected.
As shown in fig. 6, a conductive bonding layer 50 is formed on the surfaces of the first receiving electrode 41 and the second receiving electrode 42 on the side away from the second substrate 30 by coating, attaching, or the like.
In a preferred embodiment, the conductive bonding layer 50 is selected from an anisotropic conductive adhesive layer, a solder paste layer, or a conductive silver paste, for example.
Wherein the conductive bonding layer 50 makes the first and second device electrodes 261 and 262 of the micro LED chip structure 20 and the corresponding first and second receiving electrodes 41 and 42 electrically connected to each other, and the conductive bonding layer 50 fixes the first and second device electrodes 261 and 262 of the micro LED chip structure 20.
As shown in fig. 6 and 7, each receiving electrode 40 on the second substrate 30 and the corresponding micro LED chip structure 20 on the first substrate 10 are bonded.
Since the first pitch W1 is smaller than the second pitch W2, only a portion of the micro LED chip structures 20 on the first substrate 10 can be bonded with the first receiving electrode 41 and the second receiving electrode 42 on the second substrate 30. The bonding between the partial micro LED chip structure 20 and the corresponding receiving electrode 40 can be regarded as that the receiving electrode 40 is selectively bonded with the micro LED chip structure 20, so as to control the expansion of the distance between the micro LED chip structures 20 transferred onto the second substrate 30, thereby facilitating the subsequent other packaging processes.
As shown in fig. 7 and 8, laser is selectively irradiated onto the first substrate 10, and a portion of the micro LED chip structure 20 bonded to the receiving electrode 40 is controlled to be separated from the first substrate 10, so that a portion of the micro LED chip 20 is transferred onto the second substrate 30.
In this embodiment, a third distance is formed between any adjacent micro LED chip structures 20 on the second substrate 30, and the third distance is greater than the second distance.
In a preferred embodiment, the edge of the receiving electrode 40 protrudes from the projection of the micro LED chip structure 20 on the second substrate 30. That is, the first receiving electrode 41 and the second receiving electrode 42 extend in opposite directions, and extend in directions away from the micro LED chip structure 20.
Further, the second substrate 30 in fig. 8 is cut, so that the micro LED chip with the flip-chip structure can be obtained.
As shown in fig. 13 and 14, in another embodiment of the present invention, a micro LED chip 100 'is further provided, the micro LED chip 100' further includes a first auxiliary electrode 411 and a second auxiliary electrode 421 formed on the first receiving electrode 41 and the second receiving electrode 42, the first auxiliary electrode 411 is used to improve stability of the first receiving electrode 41, and the second auxiliary electrode 421 is used to improve stability of the second receiving electrode 42.
Specifically, when the micro LED chip structure 20 is transferred onto the second substrate 30, due to a transfer error that may occur, the electrical contact between the first receiving electrode 41 and/or the second receiving electrode and the corresponding first device electrode 261 and/or the corresponding second device electrode 262 is abnormal, the first auxiliary electrode 411 is formed on the first receiving electrode 41 and/or the second auxiliary electrode 421 is formed on the second receiving electrode 42 by an evaporation and plating process, the first auxiliary electrode 411 covers the first receiving electrode 41 and/or the first device electrode 261, the second auxiliary electrode 421 covers the second receiving electrode 42 and/or the second device electrode 262, and stability between the first receiving electrode 41 and the first device electrode 261 and between the second receiving electrode 42 and the second device electrode 262 is ensured, thereby improving the packaging reliability.
In addition, in order to make the micro LED chip in the flip-chip structure electrically connected to other electronic components more conveniently, the formation of the bonding electrode is usually continued, and the bonding electrode is formed on the surface of the second substrate 30 on the side away from the micro LED chip structure 20.
As shown in fig. 9, a plurality of first through holes 31 and a plurality of second through holes 32 are formed on the second substrate 30, the plurality of first through holes 31 are opposite to the plurality of first receiving electrodes 41, the plurality of second through holes 32 are opposite to the plurality of second receiving electrodes 42, each first receiving electrode 41 is exposed from the corresponding first through hole 31, and each second receiving electrode 42 is exposed from the corresponding second through hole 32.
As shown in fig. 10, the conductive layer 60 is plated into the first through holes 31 and the second through holes 32, the conductive layer 60 is a conductive pillar filled in the first through holes 31 and the second through holes 32, and one end of the conductive pillar is electrically connected to the corresponding first receiving electrode 41 or the second receiving electrode 42.
In a preferred embodiment, the material of the conductive layer 60 is selected from copper, aluminum, or a combination thereof.
As shown in fig. 11, a conductive layer 70 is formed on the surface of the second substrate 30 away from the micro LED chip structure 20 by evaporation, sputtering, electroplating, or the like.
As shown in fig. 12, the patterned conductive layer 70 forms a plurality of welding electrodes, each of which includes a first welding electrode 71 and a second welding electrode 72, wherein the conductive layer 60 conducts the first receiving electrode 41 and the first welding electrode 71, and the second receiving electrode 42 and the second welding electrode 72.
Further, the second substrate 30 shown in fig. 12 is diced to make the micro LED chip 100 shown in fig. 2.
Since the soldering electrode is formed on one side of the second substrate 30, it can be assembled by a die bonding process when it is electrically connected to an external element such as a driving back plate.
In the packaging process of the micro LED chip structures 20 shown in fig. 3 to fig. 12, the micro LED chip structures 20 transferred onto the second substrate 30 in a single time and connected to the corresponding receiving electrodes 40 are, for example, but not limited thereto.
In other embodiments of the present invention, for example, a plurality of micro LED chip structures may be simultaneously transferred onto the second substrate, and the plurality of micro LED chip structures constitute one micro LED chip unit and are transferred onto the second substrate at one time, wherein the plurality of micro LED chip structures in one micro LED chip unit share the receiving electrode. That is, the first device electrode of each micro LED chip structure in the plurality of micro LED chip structures is electrically connected to the first receiving electrode, and the second device electrode of each micro LED chip structure in the plurality of micro LED chip structures is electrically connected to the second receiving electrode.
In a preferred embodiment, a plurality of micro LED chip structures are arranged in the row direction and the column direction to form a micro LED chip unit.
The invention also provides a micro LED chip which is manufactured by the packaging method of the micro LED chip structure.
The micro LED chip includes: a substrate; a receiving electrode disposed on a surface of one side of the substrate; the conductive bonding layer is arranged on the surface of one side, away from the substrate, of the receiving electrode; and the device electrode of the micro LED chip structure extends out towards one side of the substrate, and is fixedly connected with the conductive bonding layer.
In a preferred embodiment, the micro LED chip further comprises a bonding electrode, the bonding electrode is located on a surface of the substrate on a side away from the micro LED chip structure; the substrate further comprises a through hole and a conducting layer filled in the through hole, and the conducting layer conducts the welding electrode and the receiving electrode.
In another embodiment of the present invention, an electronic device is further provided, and the electronic device includes the micro LED chip. The electronic device is, for example, a display device or an illumination device.
In summary, the present invention provides a micro LED chip, a method for packaging the same, and an electronic device, wherein a receiving electrode is formed on a second substrate in advance through a patterning process, and the size of the receiving electrode is adjusted to make the receiving electrode conform to the test specification of the conventional photo-detection device. In addition, the mode of combining the pre-manufactured receiving electrode with the selectively transferred micro LED chip structure reduces the packaging difficulty of the micro LED chip under the wafer level packaging process, so that the packaging process is easier to carry out, and the requirement on equipment is obviously reduced.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It should be noted that the present invention may have other embodiments, and those skilled in the art may make various changes and modifications according to the present invention without departing from the spirit and scope of the present invention.
Claims (10)
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| CN202110774883.1A CN113284991A (en) | 2021-07-09 | 2021-07-09 | Micro LED chip, packaging method thereof and electronic device |
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| CN103647012A (en) * | 2013-12-20 | 2014-03-19 | 中国科学院半导体研究所 | Chip transfer method for LED (light-emitting diode) wafer level package |
| CN104393161A (en) * | 2014-11-21 | 2015-03-04 | 江阴长电先进封装有限公司 | Wafer level package structure for semiconductor device |
| CN105493297A (en) * | 2015-05-21 | 2016-04-13 | 歌尔声学股份有限公司 | Transfer method and manufacturing method and apparatus of micro light emiting diode, and electronic equipment |
| CN106058010A (en) * | 2016-07-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Micro light emitting diode array's transfer printing method |
| CN109496351A (en) * | 2017-06-09 | 2019-03-19 | 歌尔股份有限公司 | Micro- light emitting diode matrix transfer method, manufacturing method and display device |
| CN107146835A (en) * | 2017-06-30 | 2017-09-08 | 中国科学院半导体研究所 | A kind of manufacturing method of micro-LED device array unit |
| CN112018218A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Method for transferring micro-light emitting diode and method for manufacturing display panel |
| CN112582343A (en) * | 2019-09-29 | 2021-03-30 | 成都辰显光电有限公司 | Growth substrate and micro-element transfer method |
| CN112649711A (en) * | 2019-10-12 | 2021-04-13 | 成都辰显光电有限公司 | Detection device and method for micro light-emitting diode |
| CN112750741A (en) * | 2019-10-29 | 2021-05-04 | 成都辰显光电有限公司 | Transfer substrate and transfer method of micro-component |
| CN112786511A (en) * | 2019-11-04 | 2021-05-11 | 成都辰显光电有限公司 | Transfer substrate and transfer method of micro-component |
| CN112840468A (en) * | 2019-12-10 | 2021-05-25 | 厦门三安光电有限公司 | a light-emitting device |
| CN112786567A (en) * | 2021-01-12 | 2021-05-11 | 杰群电子科技（东莞）有限公司 | Semiconductor power module and packaging method thereof |
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