CN103647012B - A kind of chip transfer method of the wafer-level packaging for LED - Google Patents
A kind of chip transfer method of the wafer-level packaging for LED Download PDFInfo
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- CN103647012B CN103647012B CN201310712946.6A CN201310712946A CN103647012B CN 103647012 B CN103647012 B CN 103647012B CN 201310712946 A CN201310712946 A CN 201310712946A CN 103647012 B CN103647012 B CN 103647012B
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Abstract
A kind of manufacturing method of chip of wafer-level packaging for LED, comprises the following steps：LED unit device array is made in LED, metal is made on the unit device of the unit component array, metal intermediate layer during as bonding constitutes unit component array to be bonded；Simultaneously, metal pattern is made in the front of a substrate, the metal pattern is corresponding with the electrode of unit component array to be bonded, and heat conduction, conductive channel are existed under in the metal pattern, by the conductive channel, the electrode of LED unit device is connected with the metal pad of substrate back；Then by way of bonding, unit component array flip to be bonded on substrate；Finally, by the way of laser lift-off, above-mentioned unit component to be bonded is peeled off successively so that the epitaxial layer of unit component to be bonded is separated with substrate, the epitaxial layer after the separation forms complete film LED array with substrate.Chip transfer method of the present invention, can be used for the wafer-level packaging of LED component, improve packaging efficiency and reduces cost.
Description
Technical field
The present invention relates to the chip manufacturing side of a kind of manufacturing method of chip, especially a kind of wafer-level packaging for LED
Method.
Background technology
Light emitting diode has obtained the promotion energetically of various countries as lighting source of new generation, the development of its technology.Light-emitting diodes
The performances such as luminosity, the reliability of pipe have obtained great lifting in recent years, and its application field is more and more extensive, especially exists
The huge general lighting application field of market potential, it is contemplated that will replace traditional incandescent lamp and fluorescent lamp in the near future.
Traditional packaged type of LED is mainly the encapsulation in unimodule substrate, i.e., first by chip technology extension
Piece is fabricated to single tube core, is then encapsulated LED is completed in single die package to various shells.The encapsulation side of this component level
Method yield is relatively low, and cost is high.For such case, many research institutions or LED producers propose LED wafer level envelope
Dress technology.Wafer-level packaging (WLP, Wafer Level Package) is meant that：Directly carried out on wafer it is most of or
Whole packaging and testing programs, carries out being cut into single component afterwards again.Wafer level packaging is from LED-baseplate encapsulation technology
On the basis of develop, it is different from traditional LED component level encapsulation technology, LED finish segment chip technique it
Afterwards, chip is transferred to other substrate, such as on Si, A1N physa plate；Then, electrode interconnection, fluorescent material are completed on new substrate to apply
Deposited, lens making etc., and dependence test is completed on wafer；Finally cut again, each unit is exactly a complete LED
Lamp.
The transfer method of existing Wafer level packaging, especially chip is the complete single LEDs chip well cutting
It is installed on substrate one by one, then carries out the packaging process of next step.As shown in figure 1, the complete single LEDs core made
Piece 11 is installed on substrate 16 by the mode such as metal bonding or metal ball bonding, wherein LED chip 11 contain Sapphire Substrate,
Epitaxial layer and metal electrode etc..Being made on substrate 16 has front metal pattern 14, heat conduction, conductive channel 15 and back metal pad
The structures such as 17.This manufacturing method of chip needs that single tube core of installation is repeated several times, and operation is complicated, influences speed of production, cost
It is difficult to reduce.In addition, in current technology, Sapphire Substrate is stayed on chip, and outside Sapphire Substrate and gallium nitride base
Prolong and there is lattice mismatch and thermal mismatching high between film, heat conductivility and electric conductivity are poor, have had a strong impact on high-power nitrogen
Change the making and development of gallium based light-emitting diode.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention is using on wafer direct bonding to transfer base substrate and sharp by constituency
The mode of photospallation peels off the Sapphire Substrate of the LED unit device array being bonded, and realizes the wafer-level packaging side of LED
The chip manufacturing of formula.The method is easy to automate, is conducive to improve production efficiency, improves product yield and reduction is produced into
This.
To achieve these goals, the present invention takes following technical scheme, a kind of core of wafer-level packaging for LED
Piece making method, comprises the following steps：
Step 1：In LED, the unit component of LED is made by chip technology；Between unit component exist every
It is mutually isolated from groove；
Step 2：Select unit device array it is part or all of, metal level is made thereon, as bonding when centre
Metal level.The unit component array that making has intermediate metal layer constitutes unit component array to be bonded；
Step 3：Metal pattern, the electrode of the metal pattern and unit component array to be bonded are made in the front of a substrate
It is corresponding；
Step 4：By way of bonding, unit component array flip to be bonded on substrate；
Step 5：By the way of laser lift-off, the above-mentioned unit component being bonded is peeled off successively so that outward
Prolong layer to be separated with substrate, the epitaxial layer after the separation forms complete film LED array with substrate, complete LED chip transfer.
Wherein, in step 1, described LED is the GaN base epitaxial wafer with sapphire as substrate；Described core
Blade technolgy includes photoetching, cleaning, etching, electrode fabrication, passivation, grinding and polishing etc..
In step 2, described intermediate metal layer is but not limited to Au layers or AuSn alloy-layers, and thickness is 1-3 microns；
Described intermediate metal layer is only produced in the p of unit component to be bonded, n-electrode.
In step 3, described substrate is the good material of a thermal conductivity, can be, but not limited to silicon substrate or ceramic base
Plate；Described metal pattern is corresponding with unit component array to be bonded.Metal can be, but not limited to Au layers or AuSn alloys
Layer, thickness is 0.1-3 microns；Described metal pattern exists under passage of heat, and the passage of heat runs through substrate, realizes substrate
Front metal pattern is electrically connected with back metal pad；The filler of described passage of heat can be, but not limited to copper.
In step 4, described epitaxial wafer and the combination of substrate are bonding pattern, and unit component array to be bonded falls
Loaded on substrate.
In steps of 5, the separate mode of described epitaxial wafer and substrate is laser lift-off, the good unit component of para-linkage according to
It is secondary to be peeled off, complete chip transfer.
Brief description of the drawings
Fig. 1 represents traditional schematic diagram for being intended to comprehensive laser lift-off technique peeled off；
Fig. 2A -2F represent the process schematic of each procedure of processing according to an embodiment of the invention；
Fig. 3 represents the schematic diagram of the LED obtained after completing follow-up encapsulation, cut according to the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
Referring to Fig. 2A -2F, a kind of manufacturing method of chip of wafer-level packaging for LED comprises the following steps：
As shown in Fig. 2A, 2B, the LED of use is via metal-organic chemical vapor deposition equipment (MOCVD) method
Obtain, in Sapphire Substrate 21, epitaxial growth of gallium nitride based epitaxial film 220, gallium nitride-based epitaxial film 220 is included but do not limited
In N-shaped nitride, active layer, p-type nitride.By chip technology, mainly include cleaning, photoetching, etching, electrode fabrication, blunt
Change, grinding and polishing etc., are fabricated to epitaxial film 220 the LED unit device 22 of separation.Wherein, table top is etched by ICP, makes N-shaped GaN
Material exposes；P, n-electrode, and padded n-electrode are made by E-Beam so that p, n-electrode are highly consistent.P-electrode is comprising anti-
Mirror is penetrated, its metal system can be, but not limited to Ni/Ag/Pt/Au；N-electrode metal system can be, but not limited to Cr/Pt/Ag/Au；
As shown in Figure 2 C, intermediate metal layer 23 is for example made by techniques such as sputterings on selected LED unit device, should
Intermediate metal layer 23 is for being bonded use, can be, but not limited to Au or Au-Sn alloys.The intermediate metal layer 23 is produced on simultaneously
In the p of LED unit device 22, n-electrode.When intermediate metal layer elects Au as, the gross thickness of the Au comprising electrode layer is that 1-3 is micro-
Rice.
As shown in Figure 2 D, substrate 26 has good thermal conductivity, can be, but not limited to Si substrates and ceramic substrate.Substrate 26
Front upper metal pattern 24 is made by the method for E-Beam or sputtering, the metal pattern uses Au or Au-Sn alloys, thickness
It is 0.1-3 microns.The p of metal pattern 24 and LED unit device, n-electrode (or intermediate metal layer 23) are corresponding.Under metal pattern 24
Face is made by techniques such as plating or chemical depositions passage of heat 25, and its filler can be, but not limited to Cu, passage of heat 25
Quantity be at least two, diameter is in 10-200 micrometer ranges.The back side of substrate 26 makes metal pad 27, via passage
25 realize being electrically connected with metal pattern 24.
As shown in Figure 2 E, full wafer LED is inverted in metal figure in substrate front side, and intermediate metal layer 23 and substrate
Case 24 is accurately aimed at, and both are firmly combined together by way of bonding apparatus are with eutectic weldering or Reflow Soldering.
As shown in Fig. 2 E, 2F, by way of laser lift-off, laser lift-off is carried out to the LED unit device that selection is peeled off
Technique, using the gas laser of 248nm or so, the good chip of para-linkage is peeled off one by one, realizes part LED unit device
Transfer.Fig. 2 F are the schematic diagrames after Sapphire Substrate is stripped.
Fig. 3 be a LED lamp, it be on the basis of Fig. 2 F, continue to complete coating fluorescent powder 31, make lens 32 and
The LED 30 obtained after the operations such as cutting.
Compared with the prior art that chip manufacturing is realized on by chips upside-down mounting to substrate, the present invention encapsulates LED
It is easy to automate, be conducive to improve production efficiency, improve product yield and reduce production cost.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in protection of the invention
Within the scope of.
Claims (13)
1. a kind of manufacturing method of chip of wafer-level packaging for LED, comprises the following steps：
Step 1：In LED, the unit component of LED is made by chip technology；There is isolation channel between unit component,
It is mutually isolated；
Step 2：The part of select unit device array, makes metal level thereon, intermediate metal layer during as bonding；Make
The unit component array for having intermediate metal layer constitutes unit component array to be bonded, described intermediate metal layer be Au layers or
AuSn alloy-layers, thickness is 1-3 microns；
Step 3：Metal pattern is made in the front of a substrate, the metal pattern is relative with the electrode of unit component array to be bonded
Should；
Step 4：By way of bonding, unit component array flip to be bonded on substrate；
Step 5：By the way of laser lift-off, to selection peel off LED unit device peel off successively so that epitaxial layer with
Substrate is separated, and the epitaxial layer after the separation forms complete film LED array with substrate, completes LED chip transfer.
2. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 1
The LED stated is the GaN base epitaxial wafer with sapphire as substrate.
3. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 1
The chip technology stated includes photoetching, cleaning, etching, electrode fabrication, passivation, grinding and polishing.
4. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 2
The intermediate metal layer stated only is produced in the p of unit component to be bonded, n-electrode.
5. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 3
The substrate stated is the good material of a thermal conductivity.
6. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 5, it is characterised in that：Institute in step 3
The substrate stated is silicon substrate or ceramic substrate.
7. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：In step 3
Being made in described substrate has conductive through hole, interconnects the opposing metallic figure of substrate front side and bottom surface.
8. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 3
The metal pattern stated is corresponding with unit component array to be bonded, and the metal of the metal pattern is Au layers or AuSn alloys
Layer, thickness is 0.1-3 microns.
9. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 1, it is characterised in that：Institute in step 3
The metal pattern stated exists under passage of heat, and the passage of heat runs through substrate, realizes substrate front side metal pattern and back-side gold
Category pad electrical connection.
10. the manufacturing method of chip of the wafer-level packaging of LED is used for as claimed in claim 9, it is characterised in that：In step 3
The filler of described passage of heat is copper or other materials.
The crystalline substance that the manufacturing method of chip manufacture of 11. wafer-level packaging for LED as described in claim 1-10 is any is obtained
Circle level encapsulation chip.
A kind of 12. manufacture methods of LED, the method as described in claim 1-11 is any that first passes through manufactures the crystalline substance for LED
The chip of circle level encapsulation, is further continued for obtaining LED after completing coating fluorescent powder, making lens and cutting action.
The LED that the manufacture method manufacture of 13. LEDs as claimed in claim 12 is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310712946.6A CN103647012B (en) | 2013-12-20 | 2013-12-20 | A kind of chip transfer method of the wafer-level packaging for LED |
Applications Claiming Priority (1)
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| CN201310712946.6A CN103647012B (en) | 2013-12-20 | 2013-12-20 | A kind of chip transfer method of the wafer-level packaging for LED |
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| CN103647012A CN103647012A (en) | 2014-03-19 |
| CN103647012B true CN103647012B (en) | 2017-05-31 |
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| CN104409523A (en) * | 2014-11-28 | 2015-03-11 | 江阴长电先进封装有限公司 | Package structure of semiconductor device |
| JP6375063B2 (en) * | 2015-05-21 | 2018-08-15 | ゴルテック．インク | Micro light-emitting diode transport method, manufacturing method, apparatus, and electronic apparatus |
| US10224307B2 (en) | 2015-07-14 | 2019-03-05 | Goertek, Inc. | Assembling method, manufacturing method, device and electronic apparatus of flip-die |
| WO2017075776A1 (en) * | 2015-11-04 | 2017-05-11 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| US20180025931A1 (en) * | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing |
| CN106299040B (en) * | 2016-08-18 | 2019-01-11 | 厦门市三安光电科技有限公司 | A kind of production method and its film flipped light emitting component of film flipped light emitting component |
| CN107256911B (en) * | 2017-05-31 | 2019-07-23 | 中国科学院半导体研究所 | Chip scale deep-UV light-emitting diode eutectic packaging method |
| US20200075560A1 (en) * | 2017-06-15 | 2020-03-05 | Goertek Inc. | Method for transferring micro-light emitting diodes, micro-light emitting diode device and electronic device |
| CN109841549B (en) * | 2017-11-28 | 2020-11-13 | 中国科学院金属研究所 | Method for lossless transfer of self-supporting low-dimensional material |
| CN109378296B (en) * | 2018-10-11 | 2020-12-01 | 深圳市修颐投资发展合伙企业（有限合伙） | Method for interconnecting electronic component and substrate |
| CN111564393B (en) * | 2020-05-21 | 2022-10-18 | 厦门乾照半导体科技有限公司 | Transfer method of LED chip |
| CN113345812A (en) * | 2021-06-03 | 2021-09-03 | 广东新锐流铭光电有限公司 | Packaging process of LED wafer-level chip-free substrate |
| CN113284991A (en) * | 2021-07-09 | 2021-08-20 | 苏州芯聚半导体有限公司 | Micro LED chip, packaging method thereof and electronic device |
| CN113991004A (en) * | 2021-10-26 | 2022-01-28 | 东莞市中麒光电技术有限公司 | LED substrate manufacturing method, LED substrate, LED device manufacturing method and LED device |
| CN114335063A (en) * | 2021-12-30 | 2022-04-12 | 厦门天马微电子有限公司 | Display panel, device and micro light-emitting diode transfer device and method |
| CN116314491A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Micro LED lamp bead and preparation method thereof |
| CN116314492A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Full-color Micro LED device and preparation method thereof |
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