CN103647012A - Chip transfer method for LED (light-emitting diode) wafer level package - Google Patents
Chip transfer method for LED (light-emitting diode) wafer level package Download PDFInfo
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- CN103647012A CN103647012A CN201310712946.6A CN201310712946A CN103647012A CN 103647012 A CN103647012 A CN 103647012A CN 201310712946 A CN201310712946 A CN 201310712946A CN 103647012 A CN103647012 A CN 103647012A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Abstract
A chip transfer method for LED (light-emitting diode) wafer level package includes the steps: manufacturing an LED unit device array on an LED epitaxial wafer, manufacturing metal layers on parts of unit devices of the unit device array to serve as middle metal layers in bonding, and forming a unit device array to be bonded; manufacturing metal patterns corresponding to electrodes of the unit device array to be bonded on the front surface of a base plate, forming heat conduction channels and electric conduction channels below the metal patterns, and connecting electrodes of an LED unit device with a metal bonding pad on the back surface of the base plate through the electric conduction channels; conversely mounting the unit device array to be bonded on the base plate in a bonding mode; finally, sequentially stripping the unit devices to be bonded in a laser stripping mode, separating the epitaxial layers of the unit devices to be bonded from a substrate, and forming a whole film LED array by the separated epitaxial layers and the base plate. The chip transfer method can be used for wafer level package of the LED devices, package efficiency is improved, and cost is reduced.
Description
Technical field
The present invention relates to a kind of manufacturing method of chip, especially a kind of manufacturing method of chip of the wafer-level packaging for LED.
Background technology
Light-emitting diode is as lighting source of new generation, and its technical development has obtained the promotion energetically of various countries.The performances such as the luminosity of light-emitting diode, reliability have obtained great lifting in recent years, and its application is more and more extensive, especially in the huge general lighting application of market potential, estimate will to replace traditional incandescent lamp and fluorescent lamp in the near future.
Traditional packaged type of LED is mainly to encapsulate in unimodule substrate, first by chip technology, epitaxial wafer is made into single tube core, then single die package is completed to LED encapsulation to various shells.The method for packing output of this component level is lower, and cost is high.For this situation, HuoLED producer of many research institutions has proposed LED Wafer level packaging.The implication of wafer-level packaging (WLP, Wafer Level Package) is: directly on wafer, carry out great majority or whole packaging and testing programs, be cut into afterwards single assembly again.Wafer level packaging develops from the basis of LED substrate package technology, different from traditional LED component level encapsulation technology, and LED epitaxial wafer is after finishing segment chip technique, and chip is transferred to other substrate, on Si, A1N physa plate; Then, on new substrate, complete that electrode is interconnected, fluorescent powder coated, lens making etc., and on wafer, complete dependence test; Finally cut, each unit is exactly a complete LED lamp again.
Existing Wafer level packaging, especially the transfer method of chip is that complete single LEDs chip of well cutting is installed on substrate one by one, then carries out next step packaging process.As shown in Figure 1, complete single LEDs chip 11 of making is installed on substrate 16 by modes such as metal bonding or metal ball bondings, wherein LED chip 11 has comprised Sapphire Substrate, epitaxial loayer and metal electrode etc.On substrate 16, be manufactured with the structures such as front metal pattern 14, heat conduction, conductive channel 15 and back metal pad 17.This manufacturing method of chip need to repeatedly repeat to install single tube core, and operation is complicated, affects speed of production, and cost is difficult to reduce.In addition, in current technology, Sapphire Substrate is stayed on chip, and between Sapphire Substrate and gallium nitride-based epitaxial film, exists high lattice mismatch and thermal mismatching, heat conductivility and electric conductivity are poor, have had a strong impact on making and the development of high power gallium nitride LED.
Summary of the invention
In order to solve the problems of the technologies described above, the present invention adopts wafer direct bonding to transfer base substrate, and the mode of peeling off by precinct laser peels off the Sapphire Substrate of the good LED unit component array of bonding, realizes the chip manufacturing of the wafer-level packaging mode of LED.The method easily is automated, and is conducive to enhance productivity, and improves product yield and reduces production costs.
To achieve these goals, the present invention takes following technical scheme, and a kind of manufacturing method of chip of the wafer-level packaging for LED, comprises the steps:
Step 1: on LED epitaxial wafer, make the unit component of LED by chip technology; Between unit component, there is isolation channel, mutually isolation;
Step 2: selected cell device array partly or entirely, make metal level thereon, the intermediate metal layer during as bonding.The unit component array that is manufactured with intermediate metal layer forms treats bonding unit component array;
Step 3: the front at a substrate makes metal pattern, and this metal pattern is corresponding with the electrode for the treatment of bonding unit component array;
Step 4: by the mode of bonding, treating that the upside-down mounting of bonding unit component array is on substrate;
Step 5: adopt the mode of laser lift-off, the unit component that above-mentioned bonding is good is peeled off successively, make epitaxial loayer and substrate separation, the epitaxial loayer after this separation and substrate form complete film LED array, completes LED chip and shifts.
Wherein, in step 1, described LED epitaxial wafer is to take the GaN base epitaxial wafer that sapphire is substrate; Described chip technology comprises photoetching, cleaning, etching, electrode fabrication, passivation, grinding and polishing etc.
In step 2, described intermediate metal layer is but is not limited to Au layer or AuSn alloy-layer, and thickness is 1-3 micron; Described intermediate metal layer is only produced on the p, n electrode that treats bonding unit component.
In step 3, described substrate is the good material of a thermal conductivity, can be, but not limited to silicon substrate or ceramic substrate; Described metal pattern with treat that bonding unit component array is corresponding.Metal can be, but not limited to Au layer or AuSn alloy-layer, and thickness is 0.1-3 micron; Below described metal pattern, have passage of heat, this passage of heat runs through substrate, realizes substrate front side metal pattern and is electrically connected to back metal pad; The filler of described passage of heat can be, but not limited to copper.
In step 4, described epitaxial wafer and the combination of substrate are bonding mode, treat that the upside-down mounting of bonding unit component array is on substrate.
In step 5, described epitaxial wafer and the separate mode of substrate are laser lift-off, and the unit component that para-linkage is good is peeled off successively, complete chip and shift.
Accompanying drawing explanation
Fig. 1 represents the schematic diagram of traditional laser lift-off technique that is intended to comprehensively peel off;
Fig. 2 A-2F represents the process schematic diagram of each procedure of processing according to an embodiment of the invention;
Fig. 3 represents to complete according to the present invention the schematic diagram of the LED lamp obtaining after follow-up encapsulation, cutting.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Referring to Fig. 2 A-2F, a kind of manufacturing method of chip of the wafer-level packaging for LED, comprises the steps:
As shown in Fig. 2 A, 2B, the LED epitaxial wafer adopting obtains via metal-organic chemical vapor deposition equipment (MOCVD) method, in Sapphire Substrate 21, epitaxial growth of gallium nitride based epitaxial film 220, gallium nitride-based epitaxial film 220 is including but not limited to N-shaped nitride, active layer, p-type nitride.By chip technology, mainly comprise cleaning, photoetching, etching, electrode fabrication, passivation, grinding and polishing etc., epitaxial film 220 is made into separated LED unit component 22.Wherein, by ICP etching table top, N-shaped GaN material is exposed; By E-Beam, make p, n electrode, and padded n electrode, make p, n electrode height consistent.P electrode comprises speculum, and its metal system can be, but not limited to Ni/Ag/Pt/Au; N electrode metal system can be, but not limited to Cr/Pt/Ag/Au;
As shown in Figure 2 C, on selected LED unit component, such as making intermediate metal layer 23 by the technique such as sputter, this intermediate metal layer 23 is used for bonding and uses, and can be, but not limited to Au or Au-Sn alloy.This intermediate metal layer 23 is produced on the p, n electrode of LED unit component 22 simultaneously.When intermediate metal layer is elected Au as, the gross thickness of the Au that comprises electrode layer is 1-3 micron.
As shown in Figure 2 D, substrate 26 has good thermal conductivity, can be, but not limited to Si substrate and ceramic substrate.The front of substrate 26 makes upper metal pattern 24 by the method for E-Beam or sputter, and this metal pattern adopts Au or Au-Sn alloy, and thickness is 0.1-3 micron.Metal pattern 24 is corresponding with p, the n electrode (or intermediate metal layer 23) of LED unit component.Metal pattern 24 is manufactured with passage of heat 25 below by techniques such as plating or chemical depositions, and its filler can be, but not limited to Cu, and the quantity of passage of heat 25 is at least two, and diameter is in 10-200 micrometer range.The back side of substrate 26 is manufactured with metal pad 27, via passage 25 and metal pattern 24, realizes electric connection.
As shown in Figure 2 E, the upside-down mounting of full wafer LED epitaxial wafer, in substrate front side, and on intermediate metal layer 23 and substrate, metal pattern 24 is accurately aimed at, and the mode by bonding apparatus with eutectic weldering or Reflow Soldering firmly combines both.
As shown in Fig. 2 E, 2F, by the mode of laser lift-off, to selecting the LED unit component of peeling off to carry out laser lift-off, adopt the gas laser of 248nm left and right, the chip that para-linkage is good is peeled off one by one, realizes the transfer of part LED unit component.Fig. 2 F is the schematic diagram after Sapphire Substrate is stripped from.
Fig. 3 is a LED lamp, and it is on the basis of Fig. 2 F, has continued coating fluorescent powder 31, has made the LED lamp 30 obtaining after the operations such as lens 32 and cutting.
With respect to comparing to the prior art that realizes chip manufacturing on substrate by chips upside-down mounting, the present invention easily is automated LED encapsulation, is conducive to enhance productivity, and improves product yield and reduces production costs.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (14)
1. for a manufacturing method of chip for the wafer-level packaging of LED, comprise the steps:
Step 1: on LED epitaxial wafer, make the unit component of LED by chip technology; Between unit component, there is isolation channel, mutually isolation;
Step 2: selected cell device array partly or entirely, make metal level thereon, the intermediate metal layer during as bonding; The unit component array that is manufactured with intermediate metal layer forms treats bonding unit component array;
Step 3: the front at a substrate makes metal pattern, and this metal pattern is corresponding with the electrode for the treatment of bonding unit component array;
Step 4: by the mode of bonding, treating that the upside-down mounting of bonding unit component array is on substrate;
Step 5: adopt the mode of laser lift-off, the unit component that above-mentioned bonding is good is peeled off successively, make epitaxial loayer and substrate separation, the epitaxial loayer after this separation and substrate form complete film LED array, completes LED chip and shifts.
2. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: the LED epitaxial wafer described in step 1 is to take the GaN base epitaxial wafer that sapphire is substrate.
3. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: the chip technology described in step 1 comprises photoetching, cleaning, etching, electrode fabrication, passivation, grinding and polishing etc.
4. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: the intermediate metal layer described in step 2 is Au layer or AuSn alloy-layer, and thickness is 1-3 micron.
5. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: the intermediate metal layer described in step 2 is only produced on the p, n electrode that treats bonding unit component.
6. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: the substrate described in step 3 is the good material of a thermal conductivity.
7. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 6, is characterized in that: the substrate described in step 3 is silicon substrate or ceramic substrate.
8. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, is characterized in that: in the substrate described in step 3, be manufactured with conductive through hole, make the relative metallic pattern of substrate front side and bottom surface interconnected.
9. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, it is characterized in that: the metal pattern described in step 3 with treat that bonding unit component array is corresponding, the metal of described metal pattern is Au layer or AuSn alloy-layer, and thickness is 0.1-3 micron.
10. the manufacturing method of chip of the wafer-level packaging for LED as claimed in claim 1, it is characterized in that: below the metal pattern described in step 3, have passage of heat, this passage of heat runs through substrate, realizes substrate front side metal pattern and is electrically connected to back metal pad.
The manufacturing method of chip of 11. wafer-level packaging for LED as claimed in claim 1, is characterized in that: the filler of the passage of heat described in step 3 is copper or other materials.
The wafer-level packaging chip that the manufacturing method of chip manufacture of 12. wafer-level packaging for LED as described in as arbitrary in claim 1-11 obtains.
The manufacture method of 13. 1 kinds of LED lamps, the first chip for the wafer-level packaging of LED by described method manufacture as arbitrary in claim 1-11, then continued to obtain LED lamp after the operations such as coating fluorescent powder, making lens and cutting.
The LED lamp that the manufacture method manufacture of 14. LED lamps as claimed in claim 13 obtains.
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Cited By (16)
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| CN104409523A (en) * | 2014-11-28 | 2015-03-11 | 江阴长电先进封装有限公司 | Package structure of semiconductor device |
| CN105493257A (en) * | 2015-07-14 | 2016-04-13 | 歌尔声学股份有限公司 | Assembling method and manufacturing method and apparatus of flip bare chip, and electronic equipment |
| CN105493297A (en) * | 2015-05-21 | 2016-04-13 | 歌尔声学股份有限公司 | Transfer method and manufacturing method and apparatus of micro light emiting diode, and electronic equipment |
| CN106299040A (en) * | 2016-08-18 | 2017-01-04 | 厦门市三安光电科技有限公司 | The manufacture method of a kind of thin film flipped light emitting assembly and thin film flipped light emitting assembly thereof |
| WO2017075776A1 (en) * | 2015-11-04 | 2017-05-11 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| CN107256911A (en) * | 2017-05-31 | 2017-10-17 | 中国科学院半导体研究所 | Chip scale deep-UV light-emitting diode eutectic packaging method |
| WO2018227453A1 (en) * | 2017-06-15 | 2018-12-20 | Goertek Inc. | Method for transferring micro-light emitting diodes, micro-light emitting diode device and electronic device |
| CN109378296A (en) * | 2018-10-11 | 2019-02-22 | 深圳市修颐投资发展合伙企业（有限合伙） | Electronic component and substrate interconnecting method |
| CN109841549A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院金属研究所 | A kind of method of lossless transfer self-supporting low-dimensional materials |
| JP2019522374A (en) * | 2016-07-22 | 2019-08-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Processed wafers as workpiece carrier tops in semiconductor and machine processing |
| CN111564393A (en) * | 2020-05-21 | 2020-08-21 | 厦门乾照半导体科技有限公司 | Transfer method of LED chip |
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| CN113345812A (en) * | 2021-06-03 | 2021-09-03 | 广东新锐流铭光电有限公司 | Packaging process of LED wafer-level chip-free substrate |
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| CN104409523A (en) * | 2014-11-28 | 2015-03-11 | 江阴长电先进封装有限公司 | Package structure of semiconductor device |
| JP2017537475A (en) * | 2015-05-21 | 2017-12-14 | ゴルテック．インク | Micro light-emitting diode transport method, manufacturing method, apparatus, and electronic apparatus |
| CN105493297A (en) * | 2015-05-21 | 2016-04-13 | 歌尔声学股份有限公司 | Transfer method and manufacturing method and apparatus of micro light emiting diode, and electronic equipment |
| WO2016183844A1 (en) * | 2015-05-21 | 2016-11-24 | Goertek.Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| US10319697B2 (en) | 2015-05-21 | 2019-06-11 | Goertek, Inc. | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
| CN105493297B (en) * | 2015-05-21 | 2018-09-11 | 歌尔股份有限公司 | Transfer method, manufacturing method, device and the electronic equipment of micro- light emitting diode |
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| CN105493257A (en) * | 2015-07-14 | 2016-04-13 | 歌尔声学股份有限公司 | Assembling method and manufacturing method and apparatus of flip bare chip, and electronic equipment |
| WO2017075776A1 (en) * | 2015-11-04 | 2017-05-11 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| US10181546B2 (en) | 2015-11-04 | 2019-01-15 | Goertek.Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
| JP2019522374A (en) * | 2016-07-22 | 2019-08-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Processed wafers as workpiece carrier tops in semiconductor and machine processing |
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| CN109841549B (en) * | 2017-11-28 | 2020-11-13 | 中国科学院金属研究所 | Method for lossless transfer of self-supporting low-dimensional material |
| CN109841549A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院金属研究所 | A kind of method of lossless transfer self-supporting low-dimensional materials |
| CN109378296A (en) * | 2018-10-11 | 2019-02-22 | 深圳市修颐投资发展合伙企业（有限合伙） | Electronic component and substrate interconnecting method |
| CN111564393A (en) * | 2020-05-21 | 2020-08-21 | 厦门乾照半导体科技有限公司 | Transfer method of LED chip |
| CN111564393B (en) * | 2020-05-21 | 2022-10-18 | 厦门乾照半导体科技有限公司 | Transfer method of LED chip |
| CN113345812A (en) * | 2021-06-03 | 2021-09-03 | 广东新锐流铭光电有限公司 | Packaging process of LED wafer-level chip-free substrate |
| CN113284991A (en) * | 2021-07-09 | 2021-08-20 | 苏州芯聚半导体有限公司 | Micro LED chip, packaging method thereof and electronic device |
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| CN116314492A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Full-color Micro LED device and preparation method thereof |
| CN116314491A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Micro LED lamp bead and preparation method thereof |
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