CN103700736A - Selective laser lift-off method of gallium nitride-based epitaxial film - Google Patents
Selective laser lift-off method of gallium nitride-based epitaxial film Download PDFInfo
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- CN103700736A CN103700736A CN201310713492.4A CN201310713492A CN103700736A CN 103700736 A CN103700736 A CN 103700736A CN 201310713492 A CN201310713492 A CN 201310713492A CN 103700736 A CN103700736 A CN 103700736A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
Abstract
The invention discloses a selective laser lift-off method of a gallium nitride-based epitaxial film. The method comprises the following steps of growing the gallium nitride-based epitaxial film on a first substrate, wherein the gallium nitride-based epitaxial film comprises but is not limited to n-type nitride, an active layer and a p-type nitride; manufacturing an isolation slot and separating the gallium nitride-based epitaxial film into gallium nitride-based element devices; taking a metal layer as a metal interlayer, and combining unit devices to be subjected to lift-off with a second substrate by the metal interlayer; hanging a region needing no lift-off over the second substrate, or filling a protective material in a gap between the region needing no lift-off and the second substrate and in the isolation slot; performing lift-off on all the unit devices to be subjected to lift-off from the first substrate by a laser lift-off method, and transferring the unit devices on the second substrate to form an array of the gallium nitride-based unit devices. According to the selective laser lift-off method of the gallium nitride-based epitaxial film, the selective lift-off of the gallium nitride-based epitaxial film is realized, parts of chips are transferred on the second substrate, and are then used for wafer-level packaging of the devices, the assembly flexibility and the packaging efficiency are improved, and the cost is reduced.
Description
Technical field
The present invention relates to a kind of stripping means of gallium nitride-based epitaxial film, especially a kind of precinct laser stripping means of gallium nitride-based epitaxial film.
Background technology
Light-emitting diode belongs to lighting source of new generation, and its technical development obtains support energetically and the promotion of various countries, and the performances such as the luminosity of light-emitting diode, reliability have obtained great lifting in recent years, and its application is more and more extensive.At present, the making of gallium nitride based light emitting diode generally adopts sapphire as epitaxial substrate, by metal organic chemical vapor deposition (MOCVD) epitaxial growth, obtain, but between Sapphire Substrate and gallium nitride-based epitaxial film, exist high lattice mismatch and thermal mismatching, heat conductivility and electric conductivity are poor, have had a strong impact on making and the development of high power gallium nitride LED.
In prior art, progressively develop by certain technique Sapphire Substrate is peeled off, wherein laser lift-off Sapphire Substrate is an important solution.Laser lift-off technique is to adopt the laser of ultraviolet light wave band to see through Sapphire Substrate radiation on the nitride at interface, makes gallium nitride generation thermal decomposition generate metal Ga and N
2, realize the separated of gallium nitride-based epitaxial film and Sapphire Substrate.Laser lift-off technique utilizes after excimer laser success stripping gallium nitride based epitaxial film from people such as W.S.Wong in 1998, is subject to the attention of GeLED manufacturer and research institution.Have at present Duo Jia producer and make light-emitting diode with laser lift-off technique, well-known large factories such as Lumileds, Osram, Semileds, it is reported, adopted laser lift-off to remove after Sapphire Substrate, the luminous efficiency of light-emitting diode and heat-sinking capability obtain larger raising.At present, the laser technology of gallium nitride-based epitaxial film is mainly the disposable removal of Sapphire Substrate, the gallium nitrate based unit component in Sapphire Substrate is carried out to laser lift-off successively, all transfers on second substrate once.Concrete technology as shown in Figure 1, first for example, in the upper epitaxial growth of first substrate 11 (Sapphire Substrate), obtain gallium nitride-based epitaxial film 12, then on gallium nitride-based epitaxial film, make isolation channel 15, then link together by layer of metal intermediate layer 13 and second substrate 14; Recycling laser blanket type scans gallium nitrate based unit component, and whole gallium nitrate based unit components are separated with Sapphire Substrate.Owing to being blanket type scanning, cause this technological flexibility poor, energy consumption is large.
In addition, the conventional package link complex process of LED, inefficiency, packaging cost accounts for the more than 50% of product cost.The Wafer level packaging of LED is to take disk as processing object, on disk simultaneously to numerous chips encapsulate, aging, test, finally cut into individual devices, there is high production capacity, Photochromic Properties high conformity, low cost and other advantages.The Wafer level packaging of LED is also in development at present, mainly contain two kinds of technology paths: 1, half Wafer level packaging, first epitaxial wafer is made into after complete single chips and draws and split separation, again complete chip by being installed on the transfer base substrate preparing, then to completing transfer base substrate that chip shifts, carry out the packaging technologies such as fluorescent powder coated, lens making of wafer scale, finally test, cut and obtain LED finished product; 2, complete Wafer level packaging.On epitaxial wafer, first make unit component, transfer on transfer base substrate all or part of unit component on epitaxial wafer is disposable again, then to completing transfer base substrate that chip shifts, carry out the packaging technologies such as fluorescent powder coated, lens making of wafer scale, finally test, cut and obtain LED finished product.And how utilizing complete Wafer level packaging partly to shift selectively gallium nitrate based unit component, the complete Wafer level packaging of light-emitting diode of realizing is truly exactly the technical barrier of pendulum in face of technology developer.
Summary of the invention
In order to solve the problems of the technologies described above, the present invention proposes a kind of precinct laser stripping means of gallium nitride-based epitaxial film, to realize the constituency of gallium nitride-based epitaxial film, to peel off, the gallium nitrate based unit component of transfer of part, has increased the flexibility of encapsulation with application.
The present invention takes following technical scheme, and a kind of precinct laser stripping means of gallium nitride-based epitaxial film, comprises the steps:
Step 1: growing epitaxial film on first substrate, described gallium nitride-based epitaxial film is including but not limited to N-shaped nitride, active layer, p-type nitride;
Step 2: make isolation channel on gallium nitride-based epitaxial film, gallium nitride-based epitaxial film is separated into gallium nitrate based unit component;
Step 3: using metal level as intermediate metal layer, unit component to be stripped is connected with second substrate.The region of selected laser lift-off is not suspended on second substrate, or fills protective material in the gap between them and isolation channel;
Step 4: adopt the mode of eutectic weldering or Reflow Soldering that gallium nitrate based unit component and second substrate to be stripped are combined, form the structure of first substrate/gallium nitride-based epitaxial film/intermediate metal layer/second substrate.
Step 5: use laser lift-off equipment, all unit components to be stripped are stripped down from first substrate successively, obtain gallium nitride unit component array on second substrate.
Wherein, in step 1, described first substrate is Sapphire Substrate, for example, can be sapphire plane substrate, can be also sapphire pattern substrate;
In step 2, described isolation channel is to be made by laser paddle-tumble, wet etching or dry etching, and the isolation channel degree of depth reaches gallium nitride-based epitaxial film and Sapphire Substrate interface;
In step 3, described intermediate metal layer comprises contact electrode layer, speculum, barrier layer and adhesive linkage, by eutectic, welds or the mode of Reflow Soldering forms the structure of first substrate/gallium nitride-based epitaxial film/intermediate metal layer/second substrate.Gallium nitrate based unit component upper surface, by metal intermediate layer, adopts the mode of eutectic weldering or Reflow Soldering, combines by entire surface with second substrate; Or gallium nitrate based unit component upper surface is manufactured with p-n electrode, and on second substrate, there is metallization pattern correspondingly, by eutectic, weld or the mode of Reflow Soldering combines both.Particularly point out, different from the laser lift-off technique of common gallium nitride-based epitaxial film: metal intermediate layer is only present between unit component and second substrate to be stripped, remaining element device keeps separated with second substrate.
In step 5, the gallium nitride unit component array on described second substrate is not the whole gallium nitrate based unit component in original Sapphire Substrate, but optionally part shifts.
Adopt after technique scheme, compared with prior art, the present invention can realize the constituency of gallium nitride-based epitaxial film and peel off, and the gallium nitrate based unit component of transfer of part has increased the versatile and flexible property of encapsulation with application.
Accompanying drawing explanation
Fig. 1 is the schematic side view of the whole lift-off technology of laser in prior art;
Fig. 2 A-2E is for peeling off the schematic side view of each step according to the constituency of the embodiment of the present invention one;
Fig. 2 F is for to complete according to the embodiment of the present invention one schematic top plan view of transferring to the unit component array on second substrate after peel off in constituency;
Fig. 2 G is for to complete according to the embodiment of the present invention one schematic top plan view that unit component array remaining on rear first substrate is peeled off in constituency;
Fig. 3 fills the schematic side view of the substrate of protective material according to the embodiment of the present invention two;
The schematic side view of Fig. 4 for having made the substrate of intermediate metal layer according to the embodiment of the present invention three;
The schematic side view of Fig. 5 for having made the substrate of intermediate metal layer according to the embodiment of the present invention four.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Embodiment mono-
Referring to Fig. 2 A-2E, a kind of precinct laser stripping means of gallium nitride-based epitaxial film, comprises the steps:
Step 1: as shown in Figure 2 A, conventionally adopt metal-organic chemical vapor deposition equipment (MOCVD) method, in Sapphire Substrate 21, epitaxial growth of gallium nitride based epitaxial film 22, gallium nitride-based epitaxial film 22 is including but not limited to N-shaped nitride, active layer, p-type nitride;
Step 2: as shown in Figure 2 B, such as making isolation channel 25 by techniques such as laser paddle-tumble, wet etching or dry etchings, gallium nitride-based epitaxial film 22 is separated into gallium nitrate based unit component on gallium nitride-based epitaxial film 22.The degree of depth of isolation channel 25 reaches gallium nitride-based epitaxial film 22 and Sapphire Substrate 21 interfaces.
Step 3: as shown in Figure 2 C, on gallium nitrate based unit component to be stripped, make intermediate metal layer 23, this intermediate metal layer 23 comprises contact electrode layer, speculum, barrier layer and adhesive linkage, its material is such as selecting the metal systems such as Ni/Ag/Pt/Au/Sn, and adhesive linkage further can be selected Au layer or AuSn alloy-layer.
Step 4: as shown in Figure 2 D, by intermediate metal layer 23, adopt the mode of eutectic weldering or Reflow Soldering that gallium nitrate based unit component to be stripped and second substrate 24 are combined, the structure that forms first substrate/gallium nitride-based epitaxial film/intermediate metal layer/second substrate, wherein second substrate is for example Si substrate or ceramic substrate.It needs to be noted, different from the laser lift-off technique of common gallium nitride-based epitaxial film: 23 of metal intermediate layer are present between unit component to be stripped and second substrate 24, remaining element device keeps separated with second substrate 24.Between the unit component not combining with second substrate and second substrate, form space, the filling of protective material is not carried out in these spaces and isolation channel 25.
Step 5: as shown in Figure 2 E, adopt the good gallium nitrate based unit component of gas laser para-linkage of 248nm left and right to carry out one by one laser lift-off, realize the transfer of the gallium nitrate based unit component of part.
Fig. 2 F-2G is that scheme is peeled off in the constituency of a kind of gallium nitride-based epitaxial film wherein, and Fig. 2 F is the schematic appearance after gallium nitrate based unit component 27 parts are transferred on second substrate 24; And Fig. 2 G stays the schematic appearance on sapphire pattern substrate 21 for the gallium nitrate based unit component do not peeled off.
Embodiment bis-
Different from embodiment mono-is the processing to spaces such as isolation channels 25 before laser lift-off; specifically in embodiment mono-step 4; as shown in Figure 3; between the unit component not combining with second substrate and second substrate, form space; to in these spaces and isolation channel 25, fill protective material 26; can play and suppress the shock wave stress that laser brings, Anticrack, improves the chip yield after laser lift-off.Protective material adopts dielectric material conventionally, as polyimides, silicon dioxide, epoxy resin or insulation silica gel.Then gallium nitrate based unit component to be stripped being carried out to laser lift-off completes precinct laser and peels off.
Embodiment tri-
Different from embodiment mono-is the manufacture method of intermediate metal layer 23.The structure of gallium nitrate based unit component 22 can have two kinds of structures, is respectively vertical stratification and inverted structure.Different device architectures is corresponding to different intermediate metal layers.The manufacture method of the intermediate metal layer 23 of embodiment tri-, corresponding to vertical stratification device, specifically realizes in the step 3 of embodiment mono-.As shown in Figure 4, the gallium-nitride-based devices unit of vertical stratification is a complete epitaxial structure 220, comprise N-shaped gallium nitride 221, active area 222 and p-type gallium nitride 223, and the Sapphire Substrate 210 of not yet removing, the faying face of device cell to be stripped only has p electrode, and n electrode is peeled off on the N-shaped gallium nitride 221 exposing after sapphire 210 being produced on.Faying face is complete p-type gallium nitride face, and intermediate metal layer 230 is p-type gallium nitride electrode contact layer, speculum, barrier layer and adhesive linkage, covers whole p-type gallium nitride face.Metallization pattern on second substrate is corresponding with the figure of intermediate metal layer 230.The step that then can continue is below peeled off to complete precinct laser.
Embodiment tetra-
Different from embodiment mono-is the manufacture method of intermediate metal layer 23, below describes the another kind of manufacture method of intermediate metal layer 23 in detail.The structure of gallium nitrate based unit component 22 can have two kinds of structures, is respectively vertical stratification and inverted structure.Different device architectures is corresponding to different intermediate metal layer 23.The manufacture method of the intermediate metal layer 23 of embodiment tetra-, corresponding to inverted structure device, specifically realizes in the step 3 of embodiment mono-.As shown in Figure 5, the gallium-nitride-based devices unit of inverted structure is a complete epitaxial structure 220, comprise N-shaped gallium nitride 221, active area 222 and p-type gallium nitride 223, and the Sapphire Substrate 210 of not yet removing, process ICP etching on the faying face of device cell to be stripped, exposed portions serve N-shaped gallium nitride, intermediate metal layer 23 is divided into two parts: p-type gallium nitride district 231HenXing gallium nitride district 232.Intermediate metal layer 231 comprises p-type gallium nitride electrode contact layer, speculum, barrier layer and adhesive linkage, covers p-type gallium nitride face; Intermediate metal layer 232 comprises N-shaped gallium nitride electrode contact layer, barrier layer and adhesive linkage, covers the N-shaped gallium nitride face exposing.Metallization pattern on second substrate is also divided into two parts figure, corresponding with the figure of intermediate metal layer 231,232 respectively.The step that then can continue is below peeled off to complete precinct laser.
With respect to the prior art that is intended to peel off comprehensively, compare, the present invention can realize the constituency of gallium nitride-based epitaxial film and peel off, and the gallium nitrate based unit component of transfer of part has increased the versatile and flexible property of encapsulation with application.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (22)
1. a precinct laser stripping means for gallium nitride-based epitaxial film, comprises the steps:
Step 1: growing gallium nitride based epitaxial film on first substrate, described gallium nitride-based epitaxial film comprises N-shaped nitride, active layer, p-type nitride;
Step 2: make isolation channel gallium nitride-based epitaxial film is separated into a plurality of gallium nitrate based unit components;
Step 3: by metal intermediate layer, gallium nitrate based unit component to be stripped is combined with second substrate, do not need the region of peeling off to be suspended on second substrate, or fill protective material in not needing gap between stripping area and second substrate and isolation channel;
Step 4: by laser-stripping method, all unit components to be stripped are peeled off from first substrate, transferred to the array that forms gallium nitrate based unit component on second substrate.
2. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, wherein first substrate described in step 1 is Sapphire Substrate.
3. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, the mode that wherein described in step 3, gallium nitrate based unit component to be stripped combines with second substrate is eutectic weldering or Reflow Soldering.
4. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, wherein isolation channel described in step 2 is made by laser paddle-tumble, wet etching or dry etching.
5. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, wherein metal intermediate layer described in step 3 comprises electrode layer and adhesive linkage.
6. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 5, the p-type electrode that wherein said electrode layer comprises gallium nitrate based unit component to be stripped.
7. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 5, the p-type electrode that wherein said electrode layer comprises gallium nitrate based unit component to be stripped and N-shaped electrode.
8. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 5, wherein said adhesive linkage is Au layer or AuSn alloy-layer.
9. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, wherein metal intermediate layer described in step 3 is only formed on gallium nitrate based unit component to be stripped.
10. the precinct laser stripping means of gallium nitride-based epitaxial film as claimed in claim 1, wherein second substrate described in step 3 is Si substrate or ceramic substrate.
The precinct laser stripping means of 11. gallium nitride-based epitaxial films as claimed in claim 1, wherein protective material described in step 3 is polyimides, silicon dioxide, epoxy resin or insulation silica gel.
The precinct laser stripping means of 12. 1 kinds of compound semiconductor epitaxial films, comprises the steps:
Step 1: growth compound semiconductor epitaxial film on first substrate;
Step 2: make isolation channel compound semiconductor epitaxial film is separated into a plurality of unit components;
Step 3: by metal intermediate layer, unit component to be stripped is combined with second substrate, do not need the region of peeling off to be suspended on second substrate, or fill protective material in not needing gap between stripping area and second substrate and isolation channel;
Step 4: by laser-stripping method, all unit components to be stripped are peeled off from first substrate, transferred to the array of forming unit device on second substrate.
The precinct laser stripping means of 13. gallium nitride-based epitaxial films as claimed in claim 12, wherein first substrate described in step 1 is Sapphire Substrate.
The precinct laser stripping means of 14. gallium nitride-based epitaxial films as claimed in claim 12, the mode that wherein described in step 3, gallium nitrate based unit component to be stripped combines with second substrate is eutectic weldering or Reflow Soldering.
The precinct laser stripping means of 15. gallium nitride-based epitaxial films as claimed in claim 12, wherein isolation channel described in step 2 is made by laser paddle-tumble, wet etching or dry etching.
The precinct laser stripping means of 16. compound semiconductor epitaxial films as claimed in claim 12, wherein metal intermediate layer described in step 3 comprises electrode layer and adhesive linkage.
The precinct laser stripping means of 17. compound semiconductor epitaxial films as claimed in claim 16, the p-type electrode that wherein said electrode layer comprises gallium nitrate based unit component to be stripped.
The precinct laser stripping means of 18. compound semiconductor epitaxial films as claimed in claim 16, the p-type electrode that wherein said electrode layer comprises gallium nitrate based unit component to be stripped and N-shaped electrode.
The precinct laser stripping means of 19. compound semiconductor epitaxial films as claimed in claim 16, wherein said adhesive linkage is Au layer or AuSn alloy-layer.
The precinct laser stripping means of 20. compound semiconductor epitaxial films as claimed in claim 12, wherein metal intermediate layer described in step 3 is only formed on gallium nitrate based unit component to be stripped.
The precinct laser stripping means of 21. compound semiconductor epitaxial films as claimed in claim 12, wherein second substrate described in step 3 is Si substrate or ceramic substrate.
The precinct laser stripping means of 22. compound semiconductor epitaxial films as claimed in claim 12, wherein protective material described in step 3 is polyimides, silicon dioxide, epoxy resin or insulation silica gel.
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| CN111048634A (en) * | 2019-12-26 | 2020-04-21 | 重庆康佳光电技术研究院有限公司 | Micro LED transferring method and backboard |
| CN111223763A (en) * | 2020-01-19 | 2020-06-02 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN114335285A (en) * | 2020-09-28 | 2022-04-12 | 重庆康佳光电技术研究院有限公司 | Micro-element structure, manufacturing method thereof and chip transfer method |
| WO2023273373A1 (en) * | 2021-06-28 | 2023-01-05 | 厦门士兰明镓化合物半导体有限公司 | Deep-ultraviolet led chip having a vertical structure, manufacturing method, and epitaxial structure |
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