CN116314491A - Micro LED lamp bead and preparation method thereof - Google Patents
Micro LED lamp bead and preparation method thereof Download PDFInfo
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- CN116314491A CN116314491A CN202310594053.XA CN202310594053A CN116314491A CN 116314491 A CN116314491 A CN 116314491A CN 202310594053 A CN202310594053 A CN 202310594053A CN 116314491 A CN116314491 A CN 116314491A
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- 239000000758 substrate Substances 0.000 claims abstract description 80
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- 229910052802 copper Inorganic materials 0.000 claims description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
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- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
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- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a Micro LED lamp bead and a preparation method thereof, wherein the method comprises the following steps: providing a transparent substrate; preparing a through hole on a transparent substrate, and forming a first bonding pad layer and a second bonding pad layer on the upper side and the lower side of the transparent substrate; forming a pad bit corresponding to the through hole on the surface of the first pad layer; transferring the chip to a bonding pad position through mass transfer for bonding; and packaging and cutting the bonded chip to obtain the Micro LED lamp beads. The prior art carries out huge transfer earlier, uses the scheme of encapsulation behind the technology that similar chip interconnected carries out the chip again, and the skew that the chip takes place at the in-process of transferring huge from the substrate can lead to follow-up encapsulation counterpoint difficulty, and this application is through patterning generation circuit earlier and transfer the chip again, and the chip is connected more reliably and has certain latitude through the metal bonding with the circuit, and chip skew little angle rotation can not influence the contact promptly, and then improves product yield.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Micro LED lamp bead and a preparation method thereof.
Background
The existing Micro-LED device manufacturing mode adopts a fan-out packaging mode, and the preparation method approximately comprises the following steps: firstly, transferring a large amount of chips to a substrate, filling gaps through photoresist, opening holes to expose bonding pads, forming an RDL layer through photoetching deposition, and finally forming a protective layer through photoetching.
In the prior art, the scheme of performing massive transfer firstly and then performing post-packaging on the chips by using a chip interconnection-like technology causes difficulty in subsequent packaging alignment due to the deviation of the chips in the process of massive transfer from the substrate, and the preparation process of the Micro-LED device at least needs more than 3 photoetching processes, so that the preparation cost is high, the preparation process is complex, and the yield of the product is difficult to guarantee.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a Micro LED lamp bead and a preparation method thereof, and aims to solve the technical problems of high preparation cost, complex preparation process and difficult guarantee of the yield of products in the prior art.
In order to achieve the above object, the present invention is achieved by the following technical scheme: a preparation method of Micro LED lamp beads comprises the following steps:
providing a transparent substrate;
preparing a through hole on the transparent substrate, and depositing a metal conductive layer on the transparent substrate, wherein the metal conductive layer comprises a first metal layer and a second metal layer which are respectively positioned on two opposite sides of the transparent substrate, and further comprises a third metal layer filling the through hole;
patterning the first metal layer and the second metal layer respectively to form a first bonding pad layer and a second bonding pad layer on the upper side and the lower side of the transparent substrate respectively;
preparing an insulating layer on the surface of the first bonding pad layer, exposing part of the first bonding pad layer, and forming bonding pad positions corresponding to the through holes;
transferring a chip to the transparent substrate through mass transfer, and bonding a bonding pad of the chip with the bonding pad position;
and packaging and cutting the bonded chip to obtain the Micro LED lamp beads.
Compared with the prior art, the invention has the beneficial effects that: through setting up transparent substrate, prepare the through-hole simultaneously on transparent substrate to deposit first metal layer and second metal layer in transparent substrate's upper and lower both sides, metal conductive layer still includes the third metal layer of filling the through-hole, and this third metal layer is used for connecting first metal layer and second metal layer and carries out electrically conductive, simultaneously through carrying out graphic processing to first metal layer and second metal layer, forms first pad layer and second pad layer, forms the pad position through preparing the insulating layer at first pad layer surface, and bonds the chip in the pad position, carries out the selectivity and peels off again. According to the method, the circuit is generated in a patterning mode and then the chip is transferred, the chip and the circuit are connected more reliably through metal bonding and have a certain tolerance, namely, the chip is slightly offset by a small angle and is rotated by a small angle so as not to influence contact, and then the product yield is improved, the arrangement of the Micro-level bonding pads and the interconnection with the chip are facilitated.
According to an aspect of the foregoing technical solution, the step of depositing the metal conductive layer on the transparent substrate specifically includes:
placing the transparent substrate into sulfuric acid solution with preset concentration for soaking treatment for preset time, so that hydrogen ions in the sulfuric acid solution are attached to the surface of the transparent substrate, and activating the surface of the transparent substrate;
and immersing the transparent substrate subjected to surface activation treatment in an electroless plating solution to deposit and form metal conductive layers on the surfaces of the upper side and the lower side of the transparent substrate.
According to an aspect of the above technical scheme, the preset time is 200S-400S, and the mass concentration of the sulfuric acid solution is 101g/L-552g/L.
According to an aspect of the foregoing technical solution, the step of immersing the transparent substrate after the surface activation treatment in an electroless plating solution to deposit and form a metal conductive layer on the surfaces of the upper and lower sides of the transparent substrate includes:
and immersing the transparent substrate subjected to surface activation treatment in an electroless plating solution for 5-30 min to deposit and form a metal conductive layer with the thickness of 1-20 um on the surfaces of the upper side and the lower side of the transparent substrate.
According to an aspect of the above technical solution, the material of the metal conductive layer is one of copper, nickel, gold, and silver.
According to one aspect of the above technical scheme, the chemical plating solution comprises sodium hypophosphite, malic acid and succinic acid.
According to one aspect of the above technical solution, the step of packaging the bonded chip specifically includes:
injecting packaging adhesive on the surface of the transparent substrate after the chip bonding is finished, performing compression molding under the environment that the pressure is 0.8Mpa-1.2Mpa and the temperature is 110 ℃ to 130 ℃, and drying the packaging adhesive to finish the packaging of the chip.
According to an aspect of the foregoing technical solution, the step of performing patterning processing on the first metal layer and the second metal layer to form a first pad layer and a second pad layer on upper and lower sides of the transparent substrate, respectively, specifically includes:
spin-coating photoresist on the surface of the first metal layer, and patterning the first metal layer to form a first bonding pad layer sequentially through exposure, development and etching processes;
spin-coating photoresist on the surface of the second metal layer, and imaging the second metal layer to form a second bonding pad layer through exposure, development and etching processes in sequence.
According to one aspect of the foregoing technical solution, the step of preparing an insulating layer on the surface of the first pad layer, exposing a portion of the first pad layer, and forming a pad bit disposed corresponding to the through hole specifically includes:
evaporating and forming an insulating layer on the surface of the first bonding pad layer through a PECVD process;
spin-coating photoresist on the surface of the first bonding pad layer, and patterning the first bonding pad layer through exposure, development and etching processes sequentially to expose part of the first bonding pad layer and form bonding pad positions corresponding to the through holes.
On the other hand, the invention also provides the Micro LED lamp bead, which is prepared by the Micro LED lamp bead preparation method in the technical scheme.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a method for preparing Micro LED beads according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a product obtained after step S200 in the first embodiment of the present invention;
FIG. 3 is a schematic diagram of a product obtained after step S310 in the first embodiment of the present invention;
FIG. 4 is a schematic diagram of the structure of the product obtained after step S320 in the first embodiment of the present invention;
FIG. 5 is a schematic diagram of the structure of the product obtained after step S400 in the first embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a Micro LED lamp bead according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a second pad layer according to a second embodiment of the present invention;
description of main reference numerals:
the semiconductor device comprises a transparent substrate 100, a first metal layer 110, a second metal layer 120, a third metal layer 130, a first bonding pad layer 140, a second bonding pad layer 150, a packaging adhesive layer 160, an insulating layer 170, a bonding pad 180, a first chip 210, a second chip 220 and a third chip 230;
the invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Various embodiments of the invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, a flowchart of a method for preparing Micro LED lamp beads according to a first embodiment of the present invention is shown, including the following steps:
step S100, providing a transparent substrate. In this step, the transparent substrate 100 may be resin, glass, quartz, sapphire, or the like, and in this embodiment, the transparent substrate 100 is preferably glass, and the thickness of the transparent substrate 100 is 50um to 500um.
Step 200, preparing a through hole on the transparent substrate, and depositing a metal conductive layer on the transparent substrate, wherein the metal conductive layer comprises a first metal layer and a second metal layer which are respectively positioned on two opposite sides of the transparent substrate, and further comprises a third metal layer filling the through hole. As shown in fig. 2, in addition, in this step, the step of depositing the metal conductive layers on the opposite sides of the transparent substrate 100 specifically includes:
step S210, the transparent substrate is placed into sulfuric acid solution with preset concentration for soaking treatment for preset time, so that hydrogen ions in the sulfuric acid solution are attached to the surface of the transparent substrate, and the surface of the transparent substrate is activated. Specifically, in this step, the preset time is 200S-400S, and the mass concentration of the sulfuric acid solution is 101g/L-552g/L.
Step S220, the transparent substrate with the surface activation treatment is placed into an electroless plating solution for soaking treatment, so that metal conductive layers are formed on the surfaces of the upper side and the lower side of the transparent substrate in a deposition mode. Specifically, in this step, the step of immersing the transparent substrate 100, which has been subjected to the surface activation treatment, in an electroless plating solution to deposit and form metal conductive layers on the surfaces of the upper and lower sides of the transparent substrate 100 includes:
and immersing the transparent substrate subjected to surface activation treatment in an electroless plating solution for 5-30 min to deposit and form a metal conductive layer with the thickness of 1-20 um on the surfaces of the upper side and the lower side of the transparent substrate. The material of the metal conductive layer is one of copper, nickel, gold and silver. Taking electroless copper plating, i.e. the material of the metal conductive layer is copper as an example, the main component of the electroless plating solution is CuSO of 25g/L 4 •5H 2 O, 20g/L sodium hypophosphite, 18g/L malic acid, 16g/L succinic acid, it is understood that the thickness of the metal conductive layer is controlled by the immersion time of the transparent substrate 100 in the electroless plating solution.
And step S300, respectively performing patterning treatment on the first metal layer and the second metal layer to form a first bonding pad layer and a second bonding pad layer on the upper side and the lower side of the transparent substrate. The first pad layer 140 and the second pad layer 150 are electrically connected to each other through the third metal layer 130.
Specifically, in this step, the step of patterning the first metal layer and the second metal layer to form the first pad layer and the second pad layer 150 on the upper and lower sides of the transparent substrate, respectively, specifically includes:
step S310, spin-coating photoresist on the surface of the first metal layer, and patterning the first metal layer to form a first pad layer through exposure, development and etching processes in sequence. Specifically, in this step, on the basis of the above step S200, a photoresist layer is spin-coated on the upper surface of the substrate by using a spin-coating method, a photoresist mask plate with a corresponding pattern is placed above, light rays with ultraviolet bands emitted by a mercury lamp are used for exposure, then the photoresist mask plate is placed in a developing solution for soaking for 30-200S, the area where protection is not needed is exposed, then the photoresist mask plate is placed in a copper etching solution for etching, only the area protected by the photoresist is left, all other areas are completely etched, and then the photoresist on the surface is removed by placing in a photoresist removing solution, so that the pattern shown in fig. 3 is formed.
Step S320, spin-coating photoresist on the surface of the second metal layer, and sequentially performing exposure, development and etching processes to image the second metal layer to form a second pad layer. Specifically, in this step, similar to the step in step S310, a photoresist layer is also spin-coated on the lower surface of the substrate, a photoresist mask plate with a corresponding pattern is placed above, light in the ultraviolet band emitted by a mercury lamp is used for exposure, then the photoresist mask plate is placed in a developing solution for soaking for 30-200S, the area where the protection is not needed is exposed, then the photoresist mask plate is placed in a copper etching solution for etching, only the area protected by the photoresist is left, all other areas are completely etched, and then photoresist on the surface is removed in a photoresist removing solution, so that the pattern shown in fig. 4 is formed.
Step S400, preparing an insulating layer on the surface of the first pad layer, and exposing a part of the first pad layer 140 to form a pad 180 corresponding to the through hole.
Specifically, in this step, the step of forming the pad 180 corresponding to the via hole by preparing a layer of insulating layer 170 on the surface of the first pad layer 140 and exposing a portion of the first pad layer 140 specifically includes:
in step S410, an insulating layer is formed on the surface of the first pad layer 140 by vapor deposition through a PECVD process. Specifically, in this step, an insulating layer 170 having a thickness of 5000-20000A is deposited on the upper surface of the substrate on which the photolithography pattern of step S300 is formed by PECVD, and the insulating layer 170 may be made of silicon oxide, silicon nitride, aluminum oxide, or the like.
In step S420, photoresist is spin-coated on the surface of the first pad layer 140, and the first pad layer 140 is patterned sequentially through exposure, development and etching processes, so as to expose a portion of the first pad layer 140 and form a pad position 180 corresponding to the through hole. A photoresist layer is coated on the surface of the insulating layer 170 in a spin mode, a photoetching mask plate with a required pattern is placed above the insulating layer, light rays with ultraviolet wave bands emitted by a mercury lamp are used for exposure, then the photoresist layer is placed in a developing solution for soaking for 30-200S, the area where protection is not needed is exposed, then the photoresist layer is placed in a corresponding etching solution for etching, only the area protected by the photoresist is left, all other areas are completely etched, and then photoresist on the surface is removed in a photoresist removing solution to form the pattern shown in fig. 5.
And S500, transferring the chip onto the transparent substrate through mass transfer, and bonding the bonding pad of the chip with the bonding pad position. Specifically, in this step, the step of packaging the bonded chip specifically includes:
step S510, injecting packaging glue on the surface of the transparent substrate after the chip bonding is completed, performing compression molding under the environment that the pressure is 0.8Mpa-1.2Mpa and the temperature is 110 ℃ to 130 ℃, and drying the packaging glue to complete the packaging of the chip. Specifically, the material of the encapsulation adhesive can be selected from silica gel, epoxy resin and the like, a certain volume of uncured silica gel is injected through the upper surface of the substrate, the encapsulation adhesive is molded under the pressure of 1Mpa and 120 ℃, and then the encapsulation adhesive is put into an oven at 150 ℃ for 2 hours to complete encapsulation.
And S600, packaging and cutting the bonded chip to obtain the Micro LED lamp beads. Specifically, the Micro LED lamp beads formed after cutting comprise red, green and blue chips to form full-color display. Specifically, in this embodiment, the bonding pads on the first bonding pad layer 140 and the second bonding pad layer 150 are all corresponding to the through holes and the third metal layer 130, and each Micro LED lamp bead needs to be provided with three-color chips in order to realize full-color display, in this step, the first bonding pad layer 140 and the second bonding pad layer 150 include a plurality of bonding pad groups, each bonding pad group includes four bonding pad groups, each chip includes one positive electrode pin and one negative electrode pin, one bonding pad is simultaneously connected with three negative electrode pins of the three light emitting chips, and the other three bonding pads correspond to the positive electrode pins of the three light emitting chips.
In summary, in the method for manufacturing Micro LED lamp beads according to the above embodiment of the present invention, through the provision of the transparent substrate 100, the preparation of the through holes on the transparent substrate 100, and the deposition of the first metal layer 110 and the second metal layer 120 on the upper and lower sides of the transparent substrate 100, the metal conductive layer further includes the third metal layer 130 filling the through holes, the third metal layer 130 is used for communicating the first metal layer 110 and the second metal layer 120 to conduct electricity, and simultaneously, the patterning process is performed on the first metal layer 110 and the second metal layer 120 to form the first bonding pad layer 140 and the second bonding pad layer 150, and the insulating layer is prepared on the surface of the first bonding pad layer 140 to form the bonding pad 180, and the bonding between the chip and the bonding pad 180 is performed. According to the method, the circuit is generated in a patterning mode and then the chip is transferred, the chip and the circuit are connected more reliably through metal bonding and have a certain tolerance, namely, the chip is slightly offset by a small angle and is rotated by a small angle so as not to influence contact, and then the product yield is improved, the arrangement of the Micro-level bonding pads and the interconnection with the chip are facilitated.
Example two
As shown in fig. 6, a second embodiment of the present invention provides a Micro LED lamp bead, where the Micro LED lamp bead is prepared by the Micro LED lamp bead preparation method in the above embodiment.
Specifically, the Micro LED lamp bead in this embodiment includes a transparent substrate 100, a first bonding pad layer 140 and a second bonding pad layer 150 respectively disposed on the upper and lower sides of the transparent substrate 100, where the first bonding pad layer 140 and the second bonding pad layer 150 are connected by a third metal layer 130, and the Micro LED lamp bead further includes a chipset disposed on one side of the first bonding pad layer 140, where the chipset includes a first chip 210, a second chip 220 and a third chip 230 corresponding to the three-color chips of red, green and blue, and further includes a packaging adhesive layer 160 for packaging the three-color chips.
In this embodiment, the first chip 210, the second chip 220 and the third chip 230 are respectively one of a red light chip, a blue light chip and a green light chip, and the types of the first chip 210, the second chip 220 and the third chip 230 are different from each other. Specifically, in the present embodiment, the first chip 210 is a red light chip, the second chip 220 is a green light chip, and the third chip 230 is a blue light chip. In other embodiments of the present invention, the arrangement order of the chips may be set as required, for example, the first chip 210 is a green chip, the second chip 220 is a red chip, and the third chip 230 is a blue chip.
As shown in fig. 7, the second pad layer 150 of the Micro LED lamp bead is a schematic structural diagram, wherein the number of pads formed by patterning is four, the through holes are correspondingly arranged with the pads, and the through holes are arranged so as to be electrically connected with circuit components, the Micro LED device comprises three different light emitting chips, each chip comprises a positive electrode pin and a negative electrode pin, wherein one pad is simultaneously connected with the three negative electrode pins of the three light emitting chips, the other three pads correspond to the positive electrode pins of the three light emitting chips, and the light intensity of the corresponding light emitting chips can be controlled by controlling the current intensity output to the positive electrode pins so as to emit any color light based on the three primary color light emitting chips.
In summary, in the method for manufacturing Micro LED lamp beads according to the above embodiment of the present invention, through the provision of the transparent substrate 100, the preparation of the through holes on the transparent substrate 100, and the deposition of the first metal layer 110 and the second metal layer 120 on the upper and lower sides of the transparent substrate 100, the metal conductive layer further includes the third metal layer 130 filling the through holes, the third metal layer 130 is used for communicating the first metal layer 110 and the second metal layer 120 to conduct electricity, and simultaneously, the patterning process is performed on the first metal layer 110 and the second metal layer 120 to form the first bonding pad layer 140 and the second bonding pad layer 150, and the insulating layer is prepared on the surface of the first bonding pad layer 140 to form the bonding pad 180, and the bonding between the chip and the bonding pad 180 is performed. According to the method, the circuit is generated in a patterning mode and then the chip is transferred, the chip and the circuit are connected more reliably through metal bonding and have a certain tolerance, namely, the chip is slightly offset by a small angle and is rotated by a small angle so as not to influence contact, and then the product yield is improved, the arrangement of the Micro-level bonding pads and the interconnection with the chip are facilitated.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that various modifications and improvements can be made by those skilled in the art without departing from the spirit of the invention, which falls within the scope of the present invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The preparation method of the Micro LED lamp bead is characterized by comprising the following steps of:
providing a transparent substrate;
preparing a through hole on the transparent substrate, and depositing a metal conductive layer on the transparent substrate, wherein the metal conductive layer comprises a first metal layer and a second metal layer which are respectively positioned on two opposite sides of the transparent substrate, and further comprises a third metal layer filling the through hole;
patterning the first metal layer and the second metal layer respectively to form a first bonding pad layer and a second bonding pad layer on the upper side and the lower side of the transparent substrate respectively;
preparing an insulating layer on the surface of the first bonding pad layer, exposing part of the first bonding pad layer, and forming bonding pad positions corresponding to the through holes;
transferring a chip to the transparent substrate through mass transfer, and bonding a bonding pad of the chip with the bonding pad position;
and packaging and cutting the bonded chip to obtain the Micro LED lamp beads.
2. The method for preparing Micro LED lamp beads according to claim 1, wherein the step of depositing a metal conductive layer on the transparent substrate comprises:
placing the transparent substrate into sulfuric acid solution with preset concentration for soaking treatment for preset time, so that hydrogen ions in the sulfuric acid solution are attached to the surface of the transparent substrate, and activating the surface of the transparent substrate;
and immersing the transparent substrate subjected to surface activation treatment in an electroless plating solution to deposit and form metal conductive layers on the surfaces of the upper side and the lower side of the transparent substrate.
3. The method for preparing Micro LED lamp beads according to claim 2, wherein the preset time is 200S-400S, and the mass concentration of the sulfuric acid solution is 101g/L-552g/L.
4. The method for preparing Micro LED lamp beads according to claim 2, wherein the step of immersing the transparent substrate subjected to the surface activation treatment in an electroless plating solution to deposit and form metal conductive layers on the surfaces of the upper and lower sides of the transparent substrate comprises:
and immersing the transparent substrate subjected to surface activation treatment in an electroless plating solution for 5-30 min to deposit and form a metal conductive layer with the thickness of 1-20 um on the surfaces of the upper side and the lower side of the transparent substrate.
5. The method for manufacturing Micro LED lamp beads according to claim 4, wherein the metal conductive layer is made of one of copper, nickel, gold and silver.
6. The method for preparing Micro LED lamp beads according to claim 4, wherein the chemical plating solution comprises sodium hypophosphite, malic acid and succinic acid.
7. The method for preparing Micro LED lamp beads according to any one of claims 1 to 6, wherein the step of packaging the bonded chips comprises:
injecting packaging adhesive on the surface of the transparent substrate after the chip bonding is finished, performing compression molding under the environment that the pressure is 0.8Mpa-1.2Mpa and the temperature is 110 ℃ to 130 ℃, and drying the packaging adhesive to finish the packaging of the chip.
8. The method of manufacturing Micro LED lamp beads according to claim 7, wherein the step of patterning the first metal layer and the second metal layer to form a first pad layer and a second pad layer on the upper and lower sides of the transparent substrate, respectively, comprises:
spin-coating photoresist on the surface of the first metal layer, and patterning the first metal layer to form a first bonding pad layer sequentially through exposure, development and etching processes;
spin-coating photoresist on the surface of the second metal layer, and imaging the second metal layer to form a second bonding pad layer through exposure, development and etching processes in sequence.
9. The method for manufacturing Micro LED lamp beads according to claim 7, wherein the step of manufacturing an insulating layer on the surface of the first pad layer and exposing a portion of the first pad layer to form pad positions corresponding to the through holes comprises:
evaporating and forming an insulating layer on the surface of the first bonding pad layer through a PECVD process;
spin-coating photoresist on the surface of the first bonding pad layer, and patterning the first bonding pad layer through exposure, development and etching processes sequentially to expose part of the first bonding pad layer and form bonding pad positions corresponding to the through holes.
10. A Micro LED lamp bead, characterized in that the Micro LED lamp bead is prepared by the Micro LED lamp bead preparation method according to any one of claims 1-9.
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| CN103579011A (en) * | 2012-08-08 | 2014-02-12 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN103647012A (en) * | 2013-12-20 | 2014-03-19 | 中国科学院半导体研究所 | Chip transfer method for LED (light-emitting diode) wafer level package |
| US20150060911A1 (en) * | 2013-09-05 | 2015-03-05 | Unistars Corporation | Optoelectronic semiconductor device and fabricating method thereof |
| CN113497074A (en) * | 2020-03-20 | 2021-10-12 | 京东方科技集团股份有限公司 | Micro light-emitting diode display panel and preparation method thereof |
| CN113659053A (en) * | 2021-09-07 | 2021-11-16 | 中山市木林森电子有限公司 | CSP lamp bead packaging structure and manufacturing process thereof |
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| CN103579011A (en) * | 2012-08-08 | 2014-02-12 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| US20150060911A1 (en) * | 2013-09-05 | 2015-03-05 | Unistars Corporation | Optoelectronic semiconductor device and fabricating method thereof |
| CN103647012A (en) * | 2013-12-20 | 2014-03-19 | 中国科学院半导体研究所 | Chip transfer method for LED (light-emitting diode) wafer level package |
| CN113497074A (en) * | 2020-03-20 | 2021-10-12 | 京东方科技集团股份有限公司 | Micro light-emitting diode display panel and preparation method thereof |
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Application publication date: 20230623 |